CN109511278A - 电子模块 - Google Patents

电子模块 Download PDF

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Publication number
CN109511278A
CN109511278A CN201780012207.2A CN201780012207A CN109511278A CN 109511278 A CN109511278 A CN 109511278A CN 201780012207 A CN201780012207 A CN 201780012207A CN 109511278 A CN109511278 A CN 109511278A
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China
Prior art keywords
substrate
electronic component
extension
electronic
outside edges
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Granted
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CN201780012207.2A
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CN109511278B (zh
Inventor
池田康亮
松嵜理
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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Publication of CN109511278A publication Critical patent/CN109511278A/zh
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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Abstract

本发明的电子模块，包括：基板11、21；设置在所述基板11、21的另一侧的另一侧电子部件18、23；设置在所述基板11、21的一侧的一侧电子部件13、28；在所述基板11、21的另一侧延伸至所述基板11、21的边缘外部的另一侧延伸部119a、129a；在所述基板11、21的一侧延伸至所述基板11、21的边缘外部的一侧延伸部119b、129b；在所述基板11、21的边缘外部的所述延伸部119a、129a；以及与所述一侧延伸部119b、129b连接的连接部118、128；进一步包括具有连接部118、128的连接端子11、125。

Description

电子模块
技术领域
本发明涉及一种具备电子部件的电子模块。
背景技术
以往，在封装树脂内配置有多个电子部件的电子模块已被普遍认知(例如，参照特开2014-45157号)。这种电子模块一般是被连接在控制基板等外部装置上的。
例如将控制基板等外部装置配置在电子模块的一侧(表面侧)的情况下，电子模块的端子朝着一侧延伸，并与外部装置相连接。在这种形态下，布线距离将会变长，电阻或者电抗也会随之增加，从而导致因噪声产生故障的情况。
鉴于上述情况，本发明的目的在于提供一种电子模块，其能够防止上述提到过的因电阻或电抗的增加，从而导致因噪声产生的故障。
发明内容
本发明涉及的电子模块，可以包括：
基板；
另一侧电子部件，配置在所述基板的另一侧上；
一侧电子部件，配置在所述基板的一侧上；以及
连接端子，具有：在所述基板的另一侧延伸至所述基板边缘外部的另一侧延伸部、在所述基板的一侧延伸至所述基板边缘外部的一侧延伸部、以及在所述基板的边缘外部将所述另一侧延伸部与所述一侧延伸部相连接的连接部，并且所述连接端子将所述另一侧电子部件与所述一侧电子部件电连接。
在本发明涉及的电子模块中，可以是：
所述基板具有第一基板、以及配置在所述第二基板的一侧上的第二基板，
所述另一侧电子部件具有配置在所述第二基板的另一侧上的另一侧第二电子部件，
所述一侧电子部件具有：配置在所述第二基板的一侧上的一侧第二电子部件，
所述连接端子具有：在所述第二基板的另一侧上延伸至所述第二基板的边缘外部的另一侧第二延伸部、在所述第二基板一侧上延伸至所述第二基板的边缘外部的一侧第二延伸部、以及在所述第二基板的边缘外部将所述另一侧第二延伸部与所述一侧第二延伸部相连接的第二连接部、并且具有将所述另一侧第二电子部件与所述一侧第二电子部件电连接的第二连接端子。
在本发明涉及的电子模块中，进一步包括：
设置在第一基板的一侧上的第一电子部件；以及
设置在所述第一基板侧上，并且与所述第一电子部件电连接的第一端子部，
其中，所述第一端子部具有：沿所述第一基板的面方向延伸的第一面方向延伸部、以及设置在所述第一面方向延伸部的端部上的，并且向一侧或者另一侧延伸的第一法线方向延伸部。
在本发明发明涉及的电子模块中，可以是：
所述第一法线方向延伸部，在比所述第二连接部更靠近边缘外部的位置上朝一侧延伸。
在本发明发明涉及的电子模块中，可以是：
所述基板具有：第一基板、以及设置在所述第一基板的一侧上的第二基板，
所述另一侧电子部件具有：设置在所述第一基板的另一侧上的另一侧第一电子部件，
所述一侧电子部件具有：设置在所述第一基板的一侧上的一侧第一电子部件，
所述连接端子具有：在所述第一基板的另一侧延伸到所述第一基板的边缘外部的另一侧第一延伸部、在所述第一基板的一侧延伸至所述第一基板的边缘外部的一侧第一延伸部、以及在所述第一基板的边缘外部将所述另一侧第一延伸部与所述一侧第一延伸部连接的第一连接部，并且还具有：将所述另一侧第一电子部件与所述一侧第一电子部件电连接的第一连接端子。
在本发明发明涉及的电子模块中，可以是：
所述基板具有：第一基板、以及设置在所述第一基板的一侧上的第二基板，
电子模块进一步具有：设置在所述第二基板侧上的、与所述第二电子部件电连接的第二端子部，
所述第二端子部具有：沿所述第二基板的面方向延伸的第二面方向延伸部、以及设置在所述第二面方向延伸部的端部上的，并且向一侧或另一侧延伸的第二法线方向延伸部。
发明效果
通过利用本发明的连接端子，就能够使用基板的一侧的面与另一侧的面两方面进行电子部件的配置。还有，由于可以将这些电子部件用连接端子连接，因此能够缩短电子部件间的距离，从而防止因电阻与电抗的增加，引起的因噪音导致的故障。再有，由于不用在第二基板上设置类似于连接第二基板一侧与另一侧的通孔，所以对于制造工艺的简化也是很有帮助的。
附图说明
图1是可在本发明第一实施方式中使用的电子模块的纵截面图。
图2是与图1在不同部位下切割的电子模块的纵截面图。
图3是可在本发明第一实施方式中使用的所示第一连接体等的平面图。
图4是可在所示本发明第一实施方式中使用的另一例电子模块的纵截面图。
图5(a)是可在本发明第一实施方式中使用的电子模块的平面图，图5(b)是沿图5(a)的B-B直线切割后的截面图。
图6是沿与图1相对应的部位切割后的，可在本发明第二实施方式中使用的电子模块的纵截面图。
图7是与图6在不同部位下切割的电子模块的纵截面图、图中导体层及电子部件的配置与图2的形态不同。
图8是沿与图1相对应的部位切割后的，可在本发明第三实施方式中使用的电子模块的纵截面图。
图9是与图8在不同部位下切割的电子模块的纵截面图，图中导体层、电子部件等的配置与图2及图7的形态不同。
图10(a)是本发明第三实施方式中使用的电子模块的平面图，图10(b)是对应图5(b)的截面图。
图11(a)是本发明第四实施方式中使用的电子模块的平面图，图11(b)是对应图5(b)的截面图。
图12(a)是本发明第五实施方式中使用的电子模块的斜面图，图12(b)是本发明第五实施方式中使用的电子模块的平面图。
图13(a)是本发明第五实施方式中使用的电子模块的侧面图，图13(b)是从别的方向观看本发明第五实施方式中使用的电子模块时侧面图。
图14是本发明第六实施方式中使用的所示第一连接体的平面图。
图15是本发明第七实施方式中使用的所示第二连接体的纵截面图。
图16是本发明第八实施方式中使用的电子模块的纵截面图。
图17是本发明第八实施方式中使用的其他的电子模块的纵截面图。
具体实施方式
第一实施方式
《构成》
在本实施方式中，“一侧”指的是图1中的上方侧，“另一侧”指的是图1中的下方侧。另外，将图1中的上下方向称为“第一方向”、左右方向称为“第二方向”、纸面的表里方向称为“第三方向”。将包含第二方向以及第三方向的面内方向称为“面方向”，将从一侧的方向进行观看称为“从平面看”。
如本实施方式及后述其他的实施方式所示，电子部件具有：配置在基板11、21的另一侧的另一侧电子部件18、23，以及配置在基板11、21的一侧的一侧电子电子部件13、28。在采用这种方式的情况下，还可以配置有连接端子115、125，连接端子115、125具有：在基板11、21的另一侧延伸至基板11、21边缘外部的另一侧延伸部119a、129a，在基板11、21的一侧延伸至基板11、21边缘外部的一侧延伸部119、129b以及在基板11、21的边缘外部将另一侧延伸部119a、129a与一侧延伸部119b、129b相连接的连接部118、128，并且连接端子将另一侧电子部件18、23与一侧电子部件13、28电连接。其中，可以将另一侧延伸部119a、129a与一侧延伸部119b、129b配置为在面方向上完全重合，也可以将另一侧延伸部119a、129a与一侧延伸部119b、129b配置为在面方向上部分重合。
后述封装在封装部90内的电子部件13、23为开关元件等功率元件，没有封装在封装部90内的电子部件18、28可以为控制元件。不仅限于此，封装在封装部90内的电子部件13、23也可以为控制元件，没有封装在封装部90内的电子部件18、28也可以为开关元件等功率元件。另外，电子部件13、18、23、28，可以是电容器、电阻、线圈等(可参照图12)，电子部件13、23包含了开关元件，当开关元件的开关频率为高频的情况下，从抑制噪音的观点来说在电子部件13、18、23、28中包含线圈是很有帮助的，也可以通过电子部件13、18、23、28来构成变压器。
以下说明的实施方式中的电子模块可以具有第一电子单元、以及第二电子单元。
如图1所示，第一单子单元具有：第一基板11、设置在第一基板11的一侧上的多个一侧第一导体层12、以及设置在一侧第一导体层12上的一侧第一电子部件13。一侧第一电子部件13可以是开关元件，也可以是控制元件。当一侧第一电子部件13为开关元件的情况下，一侧第一电子部件13也可以是MOSFET或IGBT等。一侧第一电子部件13、后述的另一侧第一电子部件18、另一侧第二电子部件23、以及一侧第二电子部件28可以各自由半导体元件构成，作为半导体材料。可以是硅、碳化硅、氮化镓等。一侧第一电子部件13的另一侧的面可通过焊锡等的导电性粘合剂(未图示)与一侧第一导体层12相连接。
可以在一侧第一电子部品13的一侧上设置第一连接体60，第一连接体60也可通过焊锡等的导电性粘合剂与一侧第一电子部品13相连接。
如图1所示，可在第一连接体60的一侧上设置第二电子单元，第二电子单元具有设置在第一连接体60的一侧上的另一侧第二电子部品23。另外，第二电子单元还具有第二基板21、以及设置在第二基板21的另一侧上的另一侧第二导体层22。第二连接体70可设置在另一侧第二导体层22上。第二连接体70能够通过焊锡等的导电性粘合剂与另一侧第二电子部品23的一侧面及另一侧第二导体层22的另一侧面相连接。
另一侧第二电子部件23既可以是开关元件，也可以是控制元件。当另一侧第二电子部件23成为开关元件的情况下，另一侧第二电子部件23也成为MOSFET或IGBT等。
可将一侧第二导体层27设置在第二基板21的一侧上。也可将一侧第二电子部件28设置在一侧第二导体层27上。
第一连接体60具有：第一头部61、以及从第一头部61向另一侧延伸的第一柱部62。第二连接体70具有：第二头部71、以及从第二头部71向另一侧延伸的第二柱部72。第一连接体60的截面大致呈T字状，第二连接体70的截面也大致呈T字状。
可采用陶瓷基板11、21或绝缘树脂层等作为第一基板11及第二基板21。作为导电性粘合剂，除了焊锡以外，也可以使用Ag或Cu来作为主要成分。Cu等金属同样可作为第一连接体60及第二连接体70的材料使用。此外，作为基板11、21，例如可以使用经过将电路图案化后的金属基板。此情况下，基板11、21可以兼做导体层12、22。
如前述般，电子模块具有封装部90，封装部90由将一侧第一电子部件13、另一侧第二电子部件23、第一连接体60、第二连接体70、一侧第一导体层12、另一侧第二导体层22等封装的封装树脂构成。
作为本实施方式中的一例，将采用在第二基板21侧设置第二连接端子125、并且在第一基板11侧未设置有连接端子(后述的第一连接端子115)的形态来进行说明。但是，不仅限于此形态，也可以如后述般，在第一基板11侧设置有第一连接端子115，此情况下，在第二基板21侧未设置有连接端子。
在本实施方式中，另一侧电子部件具有：在第二基板21的另一侧设置的另一侧第二电子部件23、一侧电子部件具有：在第二基板21的一侧设置的一侧第二电子部件28。所述第二连接端子125具有：在第二基板21的另一侧延伸至第二基板21的边缘外部的另一侧第二延伸部129a、在第二基板21的一侧延伸至第二基板21的边缘外部的一侧第二延伸部129b、以及在第二基板21的边缘外部将另一侧第二延伸部129a与一侧第二延伸部129b相连接的第二连接部128。第二连接端子125能将另一侧第二电子部件23与一侧第二电子部件28电连接。在图1所示的形态中，虽然是第二连接端子125的一侧第二延伸部129b与一侧第二导体层27相连接的形态，但是不限于此形态，第二连接端子125的一侧第二延伸部129b可与一侧第二电子部件28直接连接。虽然未图示，但是一侧第二电子部件28与一侧第二导体层27间可设置导电性粘合剂、一侧第二延伸部129b与一侧第二导体层27间也可设置导电性粘合剂。
如图2所示，在第二基板21侧，可设置与另一侧第二电子部件23电连接的第二端子部120。第二端子部120具有：沿着第二基板21的面方向延伸的第二面方向延伸部124、以及设置在第二面方向延伸部124的端部的，并且向一侧延伸的第二法线方向延伸部123。
在第一基板11侧，可设置与一侧第一电子部件13电连接的第一端子部110。第一端子部110具有：沿第一基板11的面方向延伸的第一面方向延伸部114、以及设置在第一面方向延伸部114的端部的，并且向一侧延伸的第一法线方向延伸部113。
第一法线方向延伸部113在比第二连接部128及第二法线方向延伸部123更靠近边缘外部的位置上向一侧延伸。在这种情况下，第一方向延伸部114比另一侧第二延伸部129a及第二面方向延伸部124延伸至更加靠近边缘外部的位置上。当沿第二方向(从图1及图2的右侧)观看时，第二连接部128及第二法线方向延伸部123与第一法线方向延伸部113完全或部分重合。但又不仅限于此，当沿第二方向观看时，第二连接部128及第二法线方向延伸部123也可以与第一法线方向延伸部113完全不重合。
本实施方式中的端子部100包含了：上述第一端子部110、第二端子部120、第一连接端子115、以及后述第二连接端子125。
第一法线方向延伸部113的一侧端部可以与第二法线方向延伸部123的一侧端部延伸至大致相同的位置上。“延伸至大致相同的位置上”指的是：两者之间的长度差在：第一法线方向延伸部113以及第二法线方向延伸部123中长度中较短的法线方向延伸部(在本实施方式中为第二法线方向延伸部123)的整体长度的5％以内。
可以设置多个第一端子部110。同样的，也可设置多个第二端子部120。另外，第一端子部110的数量可以与第二端子部120和第二连接端子125的总数相同。当第一端子部的数量与第二端子部120和第二连接端子125的总数相同的情况下，在各个第一面方向延伸部114的一侧上可设置第二面方向延伸部124或另一侧第二延伸部129a(参照图5)。
如图1所示，第一端子部110具有：与一侧第一导体层12连接的第一端子基端部111、上述第一面方向延伸部114、以及设置在第一端子基端部111与第一面方向延伸部114之间的，在第一端子基端部111侧向另一侧弯曲的第一屈曲部112。第一端子基端部111可通过导电性粘合剂与一侧第一导体层12的一侧的面相连接。
如图2所示，第二端子部120具有：与另一侧第二导体层22连接的第二端子基端部121、上述第二面方向延伸部124、以及设置在第二端子基端部121与第二面方向延伸部124之间的，在第二端子基端部121侧向一侧弯曲的第二屈曲部122。第二端子基端部121可通过导电性粘合剂与另一侧第二导体层22的另一侧的面相连接。
如图1所示，第二连接端子125具有：与另一侧第二导体层22连接的第二连接端子基端部126、上述另一侧第二延伸部129a、以及设置在第二连接端子基端部126与另一侧第二延伸部129a之间的，在第二连接端子基端部126侧向一侧弯曲的第二屈曲部127。第二连接端子基端部126可通过导电性粘合剂与另一侧第二导体层22的另一侧的面相连接。
在封装部90的外部，第一面方向延伸部114与第二面方向延伸部124以及另一侧第二延伸部129a之间可以在第一方向上隔开不小于阈值的距离。阈值的数值可以根据安全规格来决定。例如将电子部件在600V电压的环境下使用时，第一面方向延伸部114与第二面方向延伸部124以及另一侧第二延伸部129a的之间距离必须不低于3.6mm。这种情况下，阈值即为3.6mm。
如图3所示，在第一头部61的一侧的面上可设置第一沟部64。第一沟部64，在平面图(面方向)上，虽然是设置在第一柱部62的边缘外部的，但也可设置在边缘外部的一部分上，或设置在第一柱部62的整个边缘外部上。在第一头部61的一侧的面上的，第一沟部64的边缘内部，可设置焊锡等的导电性粘合剂，也可通过导电性粘合剂设置另一侧第二电子部件23。
如图1所示，可使用与另一侧第二电子部件23的后述第二栅极端子23g等端子相连接的连接件85。不仅限于此形态，也可如图4所示使用第三连接体80。第三连接体80具有：第三头部81、以及从第三头部81向另一侧延伸的第三柱部82。第三连接体80，可通过焊锡等导电性粘合剂与另一侧第二导体层22的另一侧的面以及另一侧第二电子部件23的一侧的面相连接。
图3所示的一侧第一电子部件13，是在一侧的面上具有第一栅极端子13g及第一源极端子13s的开关元件，图3所示的另一侧第二电子部件23，是在一侧的面上具有第二栅极端子23g及第二源极端子23s的开关元件。这种情况下，第二连接体70与另一侧第二电子部件23的第二源极端子23s可通过导电性粘合剂相连接，连接件85与另一侧第二电子部件23的第二栅极端子23g可通过导电性粘合剂相连接。此外，第一连接体60可通过通过导电性粘合剂将一侧第一电子部件13的第一源极端子13s与设置在另一侧第二电子部件23的另一侧的第二漏极端子连接。设置在一侧第一电子部件13的另一侧的第一漏极端子可通过导电性粘合剂与一侧第一导体层12相连接。一侧第一电子部件13的第一栅极端子13g可通过导电性粘合剂与连接件95(参照图1)相连接，该连接件95可通过导电性粘合剂与一侧第一导体层12相连接。
当一侧第一电子部件13与另一侧第二电子部件23中的任一方为开关元件的情况下，可以考虑将放置在第一连接体60上的另一侧第二电子部件23设置为发热量较低的控制元件，并且将一侧第一电子部件13设置成为开关元件。反之，也可以考虑将放置在第一连接体60上的另一侧第二电子部件23设置为开关元件，并且将一侧第一电子部件13设置为发热量较低的控制元件。
端子部100与导体层12、22间的接合，不仅能使用焊锡等导电性粘合剂来进行，还能使用激光焊接、以及超音波接合来进行。
《作用·效果》
接下来，将对由上述结构构成的本实施方式的作用以及效果进行说明。另外，可以将在《作用·效果》中说明的任何形态适用于上述结构中。
如图1所示，第二连接端子125具有：在第二基板21的另一侧延伸至第二基板21的边缘外部的另一侧第二延伸部129a、在第二基板21的一侧延伸至第二基板21的边缘外部的一侧第二延伸部129b、以及在第二基板21的边缘外部的另一侧第二延伸部129a以及与一侧第二延伸部129b连接的第二连接部128，当采用将另一侧第二电子部件23与一侧第二电子部件28电连接的情况下，第二基板21的一侧的面以及另一侧的面上都可设置电子部件。此外，由于可以利用第二连接端子125将这些电子部件连接，因此能够缩短电子部件间的距离，从而防止因电阻与电抗的增加，引起的因噪音导致的故障。再有，根据本实施方式，由于不必设置用于连接第二基板21的一侧与另一侧的通孔，因此对于制造工艺的简化也是很有帮助的。
此外，当另一侧第二电子部件23包含了开关元件等功率元件的情况下，一侧第二电子部件28也可包含用于控制相关该功率元件的控制元件。另外，在设置了多个另一侧第二电子部件23的情况下，另一侧第二电子部件23的可以全部为功率元件。这种情况下，可以设置多个一侧第二电子部件28，并且一侧第二电子部件28的可以全部为控制元件。另外，不仅限于此形态，被设置有多个的另一侧第二电子部件23种的一部分可以为功率元件，其余一部分可以为控制元件或其他的电子部件(电阻、电容器、线圈等)。同样，被设置有多个的一侧第二电子部件28的中一部可以为控制元件，其余一部分可以为功率元件或其他的电子部件(电阻、电容器、线圈等)。通过在封装部90内设置开关元件，对于利用开关元件来降低噪音所带来的影响是有帮助的。当一侧第二电子部件28或另一侧第二电子部件23包含功率元件以及控制元件的情况下，由于可通过控制元件来控制功率元件，因此在本实施方式中的电子模块可不与控制基板相连接。
如图2所示，当采用在第二基板21上设置与另一侧第二电子部件23电连接的第二端子部120，并且第二端子部120具有：沿第二基板21的面方向延伸的第二面方向延伸部124、以及设置在第二面方向延伸部124的端部，沿一侧延伸的第二法线方向延伸部123的形态下，对于可利用第二端子部120来与类似控制基板这样的外部装置连接是有帮助的。另外，控制基板是用来控制电子模块的。
如图1以及图2所示，当采用在第一基板11上设置有与一侧第一电子部件13电连接的第一端子部110，并且第一端子部110具有：沿第一基板11的面方向延伸的第一面方向延伸部114、以及设置在第一面方向延伸部114的端部的，沿一侧延伸的第一法线方向延伸部113的形态情况下，对于可利用第一端子部110来与类似控制基板这样的外部装置连接是有帮助的。
当采用第一法线方向延伸部113在比第二连接部128更靠近边缘外部的位置上向一侧延伸的形态情况下，就能够效防止第二连接部128与第一端子部110间的相互接触，此外由于还能够在不受沿第三方向的空间限制的情况下，来利用第二连接部128以及第一端子部110，因此有益于提高设计的自由度。
当采用第一法线方向延伸部113在比第二连接部123更靠近边缘外部的位置上向一侧延伸的形态情况下，能有效防止第二端子部120与第一端子部110间的相互接触，此外由于还能够在不受沿第三方向的空间限制的情况下，来利用第二连接部128以及第一端子部110，因此有益于提高设计的自由度。
当采用第一法线方向延伸部113以及第二法线方向延伸部123向同一方向延伸，即如图1所示向一侧延伸的情况下，有助于将第一端子部110以及第二端子部120与相同的外部装置连接。
通过采用第一法线方向延伸部113的一侧端部与第二法线方向延伸部123的一侧端部延伸至大致相同的位置上的形态，有助于更容易地将第一端子部110以及第二端子部120与控制基板等相同的外部装置相连接。
第二实施方式
接下来，对本发明的第二实施方式进行说明。
在第一实施方式中，虽然是在第二基板21的两面上设置电子部件，但是在本实施方式中，是在第一基板11的两面设置电子部件。具体来说，如图6所示，另一侧电子部件具有在第一基板11的另一侧上设置的另一侧第一电子部件18，一侧电子部件具有在第二基板21的一侧上设置的一侧第一电子部件13。另外，连接端子具有第一连接端子115。第一连接端子115具有：在第一基板11的另一侧延伸至第一基板11的边缘外部的另一侧第一延伸部119a、在第一基板11的一侧延伸至第一基板11的边缘外部的一侧第一延伸部119b、以及在第一基板11的边缘外部将另一侧第一延伸部119a与一侧第一延伸部119b连接的第一连接部118。第一连接端子115是用来电连接另一侧第一电子部件18与一侧第一电子部件13的。在图6所示的形态中，虽然第一连接端子115的另一侧第一延伸部119a是与另一侧第一导体层17相连接的，但是不仅限于此形态，也可以是第一连接端子115的另一侧第一延伸部119a与另一侧第二电子部件18直接连接。虽无图示，但可在另一侧第二电子部件18与另一侧第一导体层17之间设置导电性粘合剂，也可在另一第一延伸部119a与另一侧第一导体层17之间设置导电性粘合剂。在本实施方式中，上述各实施方式中说明的所有方式。关于上述各实施方式中说明过的构件用相同符号加以说明。
根据本实施方式，第一基板11侧也可实现上述第二基板21侧的功能效果。因此，能够根据需要，采用本实施方式中的形态，而非第一实施方式中的形态。
在本实施方式中，如图7所示，第一端子部110的第一法线方向延伸部113可向另一侧延伸。此外，第二端子部120的第二法线方向延伸部123也可向另一侧延伸。在采用这种形态的情况下，可通过第一端子部110以及第二端子部120来与设置在第一基板11的另一侧的类似控制基板这样的外部装置相连接。
第三实施方式
接下来，将对本发明的第三实施方式加以说明。
在本实施方式中，如图8以及图10所示，第一连接端子115以及第二连接端子125这两个连接端子均被设置。此外，在本实施方式中，如图9及图10所示，第一端子部110的第一法线方向延伸部113向另一侧延伸，第二端子部120的第二法线方向延伸部123向一侧延伸。在本实施方式中，也可采用上述各实施方式种说明过的所有形态。关于上述各实施方式中说明过的部件用相同符号加以说明。
在本实施方式中，可以在第一基板11以及第二基板21的这个基板上均设置连接端子115、125。此外，可通过第一端子部110与设置在另一侧的控制基板等外部装置相连接，还可通过第二端子部120与设置在一侧的控制基板等外部装置相连接。
另外，在本实施方式中，如图10(b)所示，在包含第一方向以及第三方向的面内方向上，连接端子115、125以及端子部110、120不重合。因此，无需将端子部110、120中的任意一个端子部延伸至边缘外部，这样一来，就可以缩短沿第二方向的长度，进而抑制在面方向的尺寸变大。
第四实施方式
接下来，将对本发明的第四实施方式进行说明。
在本实施方式中，如图11所示，尽管在第二基板21侧设置有第二连接端子125，但未设置有第二端子部120。同样的，虽在第一基板11侧设置有第一连接端子115，但未设置有第一端子部110。在本实施方式中，也可采用上述各实施方式中说明过的所有形态。关于上述各实施方式中说明过的部件用相同符号加以说明。
根据本实施方式，因未设置有第一端子部110以及第二端子部120，因此能够在第一方向(厚度方向)上减小电子模块的尺寸。在采用这种形态的情况下，设置在第一基板11的另一侧的另一侧第一电子部件18包含控制元件，并且设置在第一基板11的一侧的，被封装部90封装的一侧第一电子部件13包含开关元件等功率元件。此外，设置在第二基板21的另一侧的，被封装部90封装的另一侧第一电子部件18包含开关元件等功率元件，并且设置在第二基板21的一侧的一侧第二电子部件28包含控制元件。
此外，如本实施方式般，可以在基板11、12上设置功率元件以及控制该功率元件的控制元件这两个元件，并且仅依靠电子模块来控制功率元件，在未连接类似控制基板这样的外部装置的情况下，相比以往利用控制基板的结构来说，能够在很大程度上使装置的尺寸变得更小。
第五实施方式
接下来，将对本发明的第五实施方式加以说明。
在上述的各实施方式中，第一端子部110以及第二端子部120在电子模块的一个侧面上露出至封装部90的外部的，即所谓的SIP(Single Inline Package)型构造。而在本实施方式中，如图12以及图13所示，第一端子部110以及第二端子部120是在与电子模块相向的两个侧面上露出至封装部90向外部的，即所谓的DIP(Dual Inline Package)型构造。在本实施方式中，上述的各实施方式中说明过的所有形态都可采用。关于上述各实施方式中说明过的部件用相同符号加以说明。
根据本实施方式，由于是利用两个侧面来使端子部100露出至封装部90的外部，因此有助于增加端子部100的数量以及增加端子部100的宽度。在电流强度增大的情况下，就有必要增加端子部100的宽度。通过采用本实施方式，有助于满足上述这些要求。
在图12所示的方式中，设置在图12(b)的纸面下方侧的端子部100中位于第三方向的两端以及中央的三个端子部100为第二连接端子125，并且在这些端子之间设置有第二端子部120。此外，在设置在图12(b)的纸面上方侧的端子部100中位于第三方向的两端设置有第二端子部120，在这些第二端子部120之间设置有五个第二连接端子125。
另外，在本实施方式中，如图13所示，第一端子部110的一侧端部与第二端子部120的一侧端部并没有位于大致相同的位置上，第二端子部120的一侧端部位于比第一端子部110的一侧端部更靠近一侧的位置上。
第六实施方式
接下来，将对本发明的第六实施方式加以说明。
在上述各实施的方式中，虽使用了截面呈大致T字型的第一连接体60，但在本实施方式中，第一连接体60，如图14所示，具有从第一头部61向另一侧延伸的四个支撑部65(65a-65d)。支撑部65与一侧第一导体层12或是与第一基板11相抵接。在本实施方式中，上述的各实施方式中说明过的所有形态都可采用。关于上述各实施方式中说明过的部件用相同符号加以说明。
在本实施方式中，虽然对利用四个支撑部65的形态加以了说明，但不仅限于此，也可使用一个、两个、三个或是五个以上的支撑部65。
如本实施方式般，在设置有从第一头部61延伸的支撑部65的情况下，就能够在安装另一侧第二电子部件23时或安装另一侧第二电子部件23后，防止因另一侧第二电子部件23的重量而导致第一连接体60倾斜。此外，通过支撑部65与第一基板11或一侧第一导体层12相抵接，就能够提高散热性。特别是当支撑部65与一侧第一导体层12相抵接的情况下，有助于进一步提高散热效果。
此外，如本实施方式中设置有多个支撑部65的情况下，就能够更稳定地来设置第一连接体60，并有助于实现更高的散热效果。
第七实施方式
接下来，将对本发明的第七实施方式加以说明。
在上述各实施方式中虽使用了由具有第二柱部72的，并且截面呈大致T字型的第二连接体70加以了说明，但在本实施方式中，如图15所示，第二连接体70具有从第二头部71向另一侧延伸的延伸部75(75a、75b)。在本实施方式中，上述的各实施方式中说明过的所有形态都可采用。关于上述各实施方式中说明过的部件用相同符号加以说明。
虽在本实施方式中对使用两个延伸部75的形态加以了说明，但不仅限于此方式，也可使用一个或三个以上的延伸部75。
根据本实施方式，因设置有延伸部75，因此可以将另一侧第二电子部件23的热量有效地进行散热，从而通过第二连接体70实现高散热效果。
另外，如本实施方式般在设置有多个延伸部75的情况下，有助于实现更高的散热效果。
第八实施方式
接下来，将对本发明的第八实施方式加以说明。
上述实施方式中，虽然对使用第一连接体60以及第二连接体70的形态加以了说明，但不仅限于此方式。如图16所示，也可不设置第一连接体60以及第二连接体70。在本实施方式中，上述的各实施方式中说明过的所有形态都可采用。关于上述各实施方式中说明过的部件用相同符号加以说明。
在本实施方式中，同样能够获得包含有关于连接端子115、125的说明中所提到的效果等已述效果。
此外，也可以在无需使用两个以上的基板的情况下，如图17所示般，仅设置一个基板(在图17所示的方式中只设置有第二基板21)。
上述各实施方式种的记载以及附图中所展示的内容，仅为用于说明权利要求中记载的发明的一个例子，本发明不受上述记载的实施方式以及附图中所展示的内容所限制。另外，本发明最初申请的请权利要求仅为一例，可根据说明书、附图的记载，对权利要求进行适宜地修改。
符号说明
11 第一基板(基板)
13 一侧第一电子部件(一侧电子部件、第一电子部件)
18 另一侧第一电子部件(另一侧电子部件、第一电子部件)
21 第二基板(基板)
23 另一侧第二电子部件(另一侧电子部件、第二电子部件)
28 一侧第二电子部件(一侧电子部件、第二电子部件)
110 第一端子部
113 第一法线方向延伸部
114 第一面方向延伸部
115 第一连接端子(连接端子)
118 第一连接部(连接部)
119a 另一侧第一延伸部(另一侧延伸部)
119b 一侧第一延伸部(一侧延伸部)
120 第二端子部
123 第二法线方向延伸部
124 第二面方向延伸部
125 第二连接端子(连接端子)
128 第二连接部(连接部)
129a 另一侧第二延伸部(另一侧延伸部)
129b 一侧第二延伸部(一侧延伸部)

Claims (6)

1.一种电子模块，其特征在于，包括：
基板；
另一侧电子部件，配置在所述基板的另一侧；
一侧电子部件，配置在所述基板的一侧；以及
连接端子，具有：在所述基板的另一侧延伸至所述基板的边缘外部的另一侧延伸部、所述基板的一侧延伸至所述基板的边缘外部的一侧延伸部、以及所述基板的边缘外部将所述另一侧延伸部与所述一侧延伸部连接的连接部，并且所述连接端子将所述另一侧电子部件与所述一侧电子部件电连接。
2.根据权利要求1所述的电子模块，其特征在于：
其中，所述基板具有：第一基板、以及设置在所述第一基板的一侧上的第二基板，
所述另一侧电子部件具有：设置在所述第二基板的另一侧上的另一侧第二电子部件，
所述一侧电子部件具有：设置在所述第二基板的一侧上的一侧第二电子部件，
所述连接端子具有：在所述第二基板的另一侧延伸至所述第二基板的边缘外部的另一侧第二延伸部、在所述第二基板的一侧延伸至所述第二基板的边缘外部的一侧第二延伸部、以及在所述第二基板的边缘外部将所述另一侧第二延伸部与所述一侧第二延伸部连接的第二连接部，并且具有将所述另一侧第二电子部件与所述一侧第二电子部件电连接的第二连接端子。
3.根据权利要求2所述的电子模块，其特征在于，进一步包括：
设置在所述第一基板的一侧上的第一电子部件；以及
设置在所述第一基板侧上的，与所述第一电子部件电连接的第一端子部，
其中，所述第一端子部具有沿所述第一基板的面方向延伸的第一面方向延伸部、以及设置在所述第一面方向延伸部的端部上的，并且向一侧或另一侧延伸的第一法线方向延伸部。
4.根据权利要求3所述的电子模块，其特征在于：
其中，所述第一法线方向延伸部在比所述第二连接部更靠近边缘外部的位置上向一侧延伸。
5.根据权利要求1至4中任意一项所述的电子模块，其特征在于：
其中，所述基板具有：第一基板，以及设置在所述第一基板的一侧上的第二基板，
所述另一侧电子部件具有：设置在所述第一基板的另一侧上的另一侧第一电子部件，
所述一侧电子部件具有：设置在所述第一基板的一侧上的一侧第一电子部件，
其中，所述连接端子具有：在所述第一基板的另一侧延伸至所述第一基板的边缘外部的另一侧第一延伸部、在所述第一基板的一侧延伸至所述第一基板的边缘外部的一侧第一延伸部、以及在所述第一基板的边缘外部将所述另一侧第一延伸部与所述一侧第一延伸部连接的第一连接部，并且具有将所述另一侧第一电子部件与所述一侧第一电子部件电连接的第一连接端子。
6.根据权利要求1至5中任意一项所述的电子模块，其特征在于：
所述基板具有：第一基板、以及设置在所述第一基板的一侧上的第二基板，
所述电子模块进一步具备：设置在所述第二基板侧的，与所述第二电子部件电连接的第二端子部；
其中，所述第二端子部具有：沿所述第二基板的面方向延伸的第二面方向延伸部、以及设置在所述第二面方向延伸部的端部的，向一侧或另一侧延伸的第二法线方向延伸部。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164500A (ja) * 2000-11-27 2002-06-07 Fuji Electric Co Ltd 半導体装置
US6697257B1 (en) * 1999-10-09 2004-02-24 Robert Bosch Gmbh Power semiconductor module
US20090257212A1 (en) * 2006-08-09 2009-10-15 Honda Motor Co., Semiconductor device
JP2012146760A (ja) * 2011-01-11 2012-08-02 Calsonic Kansei Corp パワー半導体モジュール
JP2014096412A (ja) * 2012-11-07 2014-05-22 Toyota Motor Corp 半導体モジュール
CN104882423A (zh) * 2014-02-27 2015-09-02 株式会社东芝 半导体器件

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166148A (ja) 1985-01-18 1986-07-26 Sanyo Electric Co Ltd 多層混成集積回路装置
US4730232A (en) 1986-06-25 1988-03-08 Westinghouse Electric Corp. High density microelectronic packaging module for high speed chips
US4878106A (en) * 1986-12-02 1989-10-31 Anton Piller Gmbh & Co. Kg Semiconductor circuit packages for use in high power applications and method of making the same
JPH0671062B2 (ja) 1989-08-30 1994-09-07 株式会社東芝 樹脂封止型半導体装置
US5250845A (en) 1990-11-30 1993-10-05 Hughes Aircraft Company Totally enclosed hermetic electronic module
JP3253765B2 (ja) 1993-06-25 2002-02-04 富士通株式会社 半導体装置
US5408128A (en) * 1993-09-15 1995-04-18 International Rectifier Corporation High power semiconductor device module with low thermal resistance and simplified manufacturing
DE4421319A1 (de) 1994-06-17 1995-12-21 Abb Management Ag Niederinduktives Leistungshalbleitermodul
JPH09107067A (ja) 1995-10-09 1997-04-22 Hitachi Ltd 半導体装置
JPH113955A (ja) 1997-06-12 1999-01-06 Shinko Electric Ind Co Ltd 半導体チップ搭載ボード
JP3521757B2 (ja) * 1998-09-08 2004-04-19 株式会社豊田自動織機 半導体モジュール電極構造
JP2005340639A (ja) * 2004-05-28 2005-12-08 Toyota Industries Corp 半導体装置及び三相インバータ装置
JP5291864B2 (ja) * 2006-02-21 2013-09-18 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置の製造方法およびｄｃ／ｄｃコンバータ用半導体装置
US7557434B2 (en) * 2006-08-29 2009-07-07 Denso Corporation Power electronic package having two substrates with multiple electronic components
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
EP3633723B1 (en) * 2009-05-14 2023-02-22 Rohm Co., Ltd. Semiconductor device
JP5481148B2 (ja) * 2009-10-02 2014-04-23 日立オートモティブシステムズ株式会社 半導体装置、およびパワー半導体モジュール、およびパワー半導体モジュールを備えた電力変換装置
JP5251991B2 (ja) * 2011-01-14 2013-07-31 トヨタ自動車株式会社 半導体モジュール
US9093434B2 (en) * 2011-04-04 2015-07-28 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN103918073A (zh) 2011-11-07 2014-07-09 大金工业株式会社 半导体装置
JP2013219268A (ja) * 2012-04-11 2013-10-24 Sumitomo Electric Ind Ltd 半導体デバイス
JP2014045157A (ja) 2012-08-29 2014-03-13 Hitachi Automotive Systems Ltd パワー半導体モジュール
JP5862702B2 (ja) 2014-05-07 2016-02-16 トヨタ自動車株式会社 三相インバータモジュール
JP6133238B2 (ja) * 2014-06-09 2017-05-24 三菱電機株式会社 半導体装置
KR101673680B1 (ko) * 2014-10-16 2016-11-07 현대자동차주식회사 전력 반도체 모듈 및 이의 제조 방법
JP6344215B2 (ja) * 2014-11-21 2018-06-20 株式会社デンソー 半導体装置及びパワーモジュール
CN106463501B (zh) 2015-04-28 2019-08-30 新电元工业株式会社 半导体模块
DE102015108700A1 (de) * 2015-06-02 2016-12-08 Infineon Technologies Austria Ag Halbleiter-Leistungs-Package und Verfahren zu ihrer Herstellung
DE102015218369A1 (de) 2015-09-24 2017-03-30 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Leiterrahmenmoduls und Leiterrahmenmodul
JP6147893B2 (ja) * 2016-05-20 2017-06-14 日立オートモティブシステムズ株式会社 電力変換装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6697257B1 (en) * 1999-10-09 2004-02-24 Robert Bosch Gmbh Power semiconductor module
JP2002164500A (ja) * 2000-11-27 2002-06-07 Fuji Electric Co Ltd 半導体装置
US20090257212A1 (en) * 2006-08-09 2009-10-15 Honda Motor Co., Semiconductor device
JP2012146760A (ja) * 2011-01-11 2012-08-02 Calsonic Kansei Corp パワー半導体モジュール
JP2014096412A (ja) * 2012-11-07 2014-05-22 Toyota Motor Corp 半導体モジュール
CN104882423A (zh) * 2014-02-27 2015-09-02 株式会社东芝 半导体器件

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