CN109503158A - 一种耐温度冲击的压电陶瓷材料及其制备方法 - Google Patents
一种耐温度冲击的压电陶瓷材料及其制备方法 Download PDFInfo
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- CN109503158A CN109503158A CN201811539037.6A CN201811539037A CN109503158A CN 109503158 A CN109503158 A CN 109503158A CN 201811539037 A CN201811539037 A CN 201811539037A CN 109503158 A CN109503158 A CN 109503158A
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 230000035939 shock Effects 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000003381 stabilizer Substances 0.000 claims abstract description 45
- 229910052808 lithium carbonate Inorganic materials 0.000 claims abstract description 32
- 238000000498 ball milling Methods 0.000 claims abstract description 30
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 17
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 17
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000010287 polarization Effects 0.000 claims abstract description 16
- 239000004615 ingredient Substances 0.000 claims abstract description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract 2
- 239000010955 niobium Substances 0.000 claims description 44
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 229910052709 silver Inorganic materials 0.000 claims description 25
- 239000004332 silver Substances 0.000 claims description 25
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 21
- NBJYBMGLGHPGGH-UHFFFAOYSA-N [Pb].[Ni].[Nb].[Zn].[Nb] Chemical compound [Pb].[Ni].[Nb].[Zn].[Nb] NBJYBMGLGHPGGH-UHFFFAOYSA-N 0.000 claims description 16
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 16
- 238000010304 firing Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- 238000003786 synthesis reaction Methods 0.000 claims description 9
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000002474 experimental method Methods 0.000 claims description 5
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims description 5
- PZFKDUMHDHEBLD-UHFFFAOYSA-N oxo(oxonickeliooxy)nickel Chemical compound O=[Ni]O[Ni]=O PZFKDUMHDHEBLD-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000013102 re-test Methods 0.000 claims description 5
- 238000007873 sieving Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 20
- 238000012360 testing method Methods 0.000 abstract description 19
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 abstract description 18
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 4
- 238000000465 moulding Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 19
- 239000000306 component Substances 0.000 description 19
- 229910002059 quaternary alloy Inorganic materials 0.000 description 15
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 4
- -1 niobium zinc-niobium nickel-niobium antimony-lead Chemical compound 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- PNEFIWYZWIQKEK-UHFFFAOYSA-N carbonic acid;lithium Chemical compound [Li].OC(O)=O PNEFIWYZWIQKEK-UHFFFAOYSA-N 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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Abstract
本发明公开了一种耐温度冲击的压电陶瓷材料及其制备方法,其组分式为:0.90Pb(Zrm,Tin)O3‑0.05Pb(Zn1/3Nb2/3)O3‑0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05~0.95;x=1.0~2.0;y=0.5~0.8;耐温度冲击稳定剂为:氧化铈、碳酸锂、氧化钨、三氧化二铝其中的两种或两种以上的混合物。先按化学计量比配料、球磨、压块预烧、二次球磨、成型、排胶烧结、印银、极化、测试。通过该工艺制得的压电陶瓷材料参数为:d33≥500pC/N,ε33 T/ε0≥2700,Kp≥0.70,电容变化率≤±3%。该方法制备的压电陶瓷材料应用于倒车雷达上,有利于倒车雷达灵敏度的提高,同时提高倒车雷达的可靠性和稳定性。
Description
技术领域
本发明属于压电陶瓷材料领域,具体涉及一种耐温度冲击的压电陶瓷材料及其制备方法。
背景技术
压电陶瓷是一种能够将机械能和电能互相转换的功能陶瓷材料。长期以来,利用锆钛酸铅二元系(PZT)及三元系压电陶瓷制作压电发声器、超声清洗、超声医疗、声纳系统、汽车倒车传感器、超声换能器和压电致动元件等产品,广泛用于航空、航天、舰船、汽车等领域,对国家整个经济发展有着巨大的影响。随着人民生活水平的提高,人们对汽车的需求量越来越大,汽车传感器也得到巨大的发展,其中倒车雷达作为汽车泊车或者倒车时的安全辅助装置,能够解除驾驶员泊车、倒车和起动车辆时前后左右探视所引起的困扰,提高驾驶安全性等作用,备受人们的青睐,并对倒车雷达的技术要求越来越苛刻。
通常,倒车雷达由超声波传感器(俗称探头)、控制器和显示器(或蜂鸣器)等部分构成。其原理是利用超声波传感器产生的超声波对车后发射, 如在一定范围内碰到物体,就有反射波返回发射源 (超声波传感器的表面), 主机利用发射波和反射波之间的延时时间和声波速度就能测得距离障碍物的距离,由显示器显示距离并发出其他警示信号,及时示警,从而保证驾驶者的安全。通过原理可以看出,倒车雷达的起着最为重要作用的部件是超声波传感器,超声波传感器的灵敏度、可靠性、探测距离、稳定性等性能则取决于其核心部件压电陶瓷。
当压电陶瓷材料具有高的介电常数、压电常数、耐温度冲击稳定性才能获得高品质的倒车雷达。而现有应用于倒车雷达的压电陶瓷材料介电常数≤2300;压电常数≤450pC/N;温度冲击后电容变化率≤±10%,不利于倒车雷达灵敏度的提高,致使可靠性和稳定性降低。
发明内容
本发明所要解决的就是上述存在的技术问题,提供一种耐温度冲击压电陶瓷材料及其制备方法。
为实现上述目的,本发明技术方案如下:
(1)本发明的组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05~0.95;x=1.0~2.0;y=0.5~0.8。
(2)本发明的一种耐温度冲击压电陶瓷材料及其制备方法是将Pb3O4、ZrO2、TiO2、ZnO、Nb2O5、Ni2O3、Sb2O3、耐温度冲击稳定剂按0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05~0.95;x=1.0~2.0;y=0.5~0.8。的化学计量比配料,行星式球磨4h,烘干,过40目筛。
(3)将过筛后的粉料,在20T压机下进行压块,然后在箱式炉中进行合成,合成温度800~900℃,升温速率3.0~3.5℃/min,保温2h随炉冷却。
(4)合成后的坯块机械打碎并进行二次球磨,球磨时间4-8h后烘干过40目筛,随后进行挤模成型,然后放入箱式炉中,在1250~1300℃下烧结,850℃以前升温速率0.8~1.0℃/min,850℃之后升温速率2.5~3.0℃/min,保温2h后随炉冷却。
(5)烧结后瓷片进行印银,印完银后在隧道炉中烧银,烧银温度750~780℃,烧银总时间2h。然后在1.6KV/mm的电压下进行空气极化,极化时间30min,极化温度100℃,极化后静置24h,然后在-55℃~85℃下进行循环温度冲击实验,循环次数20次,循环结束后,在室温(25℃)下静置1h,再测试电容,并计算电容变化率。
上述步骤(2)原料纯度均≥98%;球磨参数为:氧化锆球:原料:去离子水=2.5:1:1.2。
上述步骤(3)压机压力为20MPa,压块尺寸:Φ30*5mm。
上述步骤(4)挤模时添加的PVA为20~25wt%;挤模尺寸:Φ7.2*0.2mm;二次球磨参数为:氧化锆球:原料:去离子水=2.5:1:0.8。
上述步骤(5)提到的电容变化率(△C)计算公式为:
△C=(C温冲后-C25℃)/ C25℃×100%
式中:C温冲后为循环温度冲击后,静置1h,在25℃下测试瓷片的容量;
C25℃为循环温度冲击前25℃下测试瓷片的容量。
本发明相对于现有技术的进步性体现在以下几个方面:采用本发明提供的配方以及制备方法,获得优异的介电以及压电性能:d33≥500pC/N,ε33 T/ε0≥2700,Kp≥0.70,电容变化率≤±3%。本发明采用的工艺简单,成本低,易于批量生产,压电性能好,降低了电容变化率,提高了瓷片的温度冲击稳定性,有利于倒车雷达灵敏度的提高,同时提高了倒车雷达的可靠性和稳定性。
具体实施方式
下面结合实施例对本发明作进一步详细的描述:
实施例1
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、Al2O3占15wt%。
根据上述配方将Pb3O4、ZrO2、TiO2、ZnO、Nb2O5、Ni2O3、Sb2O3、耐温度冲击稳定剂按化学计量比进行配料,并按氧化锆球:原料:去离子水=2.5:1:1.2加入球磨罐中,然后进行行星式球磨,球磨时间4h;再将球磨好后的物料烘干,然后过40目筛。
过筛后的粉料,在20T压机下进行压块,压机压力为20MPa,压块尺寸:Φ30*5mm,然后在箱式炉中进行合成,合成温度800℃,升温速率3.0℃/min,保温2h随炉冷却。
合成后的坯块机械打碎,按氧化锆球:原料:去离子水=2.5:1:0.8加入球磨罐,再在行星式球磨机中进行二次球磨,球磨时间4h,球磨结束后将物料烘干过40目筛,随后进行挤模成型,挤模时添加的PVA为24wt%;挤模尺寸:Φ7.2*0.2mm;挤模后的瓷片放入箱式炉中,在1250℃下烧结,850℃以前升温速率1.0℃/min,850℃之后升温速率3.0℃/min,保温2h后随炉冷却。
烧结后瓷片进行印银,印完银后在隧道炉中烧银,烧银温度780℃,烧银总时间2h。然后在1.6KV/mm的电压下进行空气极化,极化时间30min,极化温度100℃,极化后静置24h,然后在-55℃~85℃下进行循环温度冲击实验,循环次数20次,循环结束后,在室温(25℃)下静置1h,再测试电容,并计算电容变化率,上述材料的测试结果见表1。
实施例2
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、WO3占15wt%。
根据上述配方将Pb3O4、ZrO2、TiO2、ZnO、Nb2O5、Ni2O3、Sb2O3、耐温度冲击稳定剂按化学计量比进行配料,并按氧化锆球:原料:去离子水=2.5:1:1.2加入球磨罐中,然后进行行星式球磨,球磨时间4h;再将球磨好后的物料烘干,然后过40目筛。
过筛后的粉料,在20T压机下进行压块,压机压力为20MPa,压块尺寸:Φ30*5mm,然后在箱式炉中进行合成,合成温度850℃,升温速率3.5℃/min,保温2h随炉冷却。
合成后的坯块机械打碎,按氧化锆球:原料:去离子水=2.5:1:0.8加入球磨罐,再在行星式球磨机中进行二次球磨,球磨时间6h,球磨结束后将物料烘干过40目筛,随后进行挤模成型,挤模时添加的PVA为22wt%;挤模尺寸:Φ7.2*0.2mm;挤模后的瓷片放入箱式炉中,在1280℃下烧结,850℃以前升温速率0.8℃/min,850℃之后升温速率2.7℃/min,保温2h后随炉冷却。
烧结后瓷片进行印银,印完银后在隧道炉中烧银,烧银温度760℃,烧银总时间2h。然后在1.6KV/mm的电压下进行空气极化,极化时间30min,极化温度100℃,极化后静置24h,然后在-55℃~85℃下进行循环温度冲击实验,循环次数20次,循环结束后,在室温(25℃)下静置1h,再测试电容,并计算电容变化率,上述材料测试结果见表1。
实施例3
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂混合物,其中CeO2占25wt%、Li2CO3占75wt%。
根据上述配方将Pb3O4、ZrO2、TiO2、ZnO、Nb2O5、Ni2O3、Sb2O3、耐温度冲击稳定剂按化学计量比进行配料,并按氧化锆球:原料:去离子水=2.5:1:1.2加入球磨罐中,然后进行行星式球磨,球磨时间4h;再将球磨好后的物料烘干,然后过40目筛。
过筛后的粉料,在20T压机下进行压块,压机压力为20MPa,压块尺寸:Φ30*5mm,然后在箱式炉中进行合成,合成温度900℃,升温速率3.3℃/min,保温2h随炉冷却。
合成后的坯块机械打碎,按氧化锆球:原料:去离子水=2.5:1:0.8加入球磨罐,再在行星式球磨机中进行二次球磨,球磨时间8h,球磨结束后将物料烘干过40目筛,随后进行挤模成型,挤模时添加的PVA为25wt%;挤模尺寸:Φ7.2*0.2mm;挤模后的瓷片放入箱式炉中,在1300℃下烧结,850℃以前升温速率1.0℃/min,850℃之后升温速率2.5℃/min,保温2h后随炉冷却。
烧结后瓷片进行印银,印完银后在隧道炉中烧银,烧银温度780℃,烧银总时间2h。然后在1.6KV/mm的电压下进行空气极化,极化时间30min,极化温度100℃,极化后静置24h,然后在-55℃~85℃下进行循环温度冲击实验,循环次数20次,循环结束后,在室温(25℃)下静置1h,再测试电容,并计算电容变化率,上述材料测试结果见表1。
实施例4
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.0;y=0.5。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为98.5wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、Al2O3占15wt%。按照实施例1方法制备压电陶瓷片,测试结果见表1。
实施例5
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.0;y=0.5。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为98.5wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、WO3占15wt%。按照实施例2方法制备压电陶瓷片,测试结果见表1。
实施例6
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=1.0;y=0.5。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为98.5wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占25wt%、Li2CO3占75wt%,按照实施例3方法制备压电陶瓷片,测试结果见表1。
实施例7
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=2.0;y=0.8。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.2wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、Al2O3占15wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
实施例8
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=2.0;y=0.8。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.2wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、WO3占15wt%,按照实施例2方法制备压电陶瓷片,测试结果见表1。
实施例9
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.0;x=2.0;y=0.8。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.2wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占25wt%、Li2CO3占75wt%,按照实施例3方法制备压电陶瓷片,测试结果见表1。
实施例10
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、Al2O3占15wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
实施例11
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、WO3占15wt%,按照实施例2方法制备压电陶瓷片,测试结果见表1。
实施例12
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占25wt%、Li2CO3占75wt%,按照实施例3方法制备压电陶瓷片,测试结果见表1。
实施例13
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=0.95;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、Al2O3占15wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
实施例14
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=0.95;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占28wt%、Li2CO3占57wt%、WO3占15wt%,按照实施例2方法制备压电陶瓷片,测试结果见表1。
实施例15
一种耐温度冲击压电陶瓷材料,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=0.95;x=1.5;y=0.7。
所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.8wt%。
所述的耐温度冲击稳定剂为氧化铈、碳酸锂以及三氧化二铝混合物,其中CeO2占25wt%、Li2CO3占75wt%,按照实施例3方法制备压电陶瓷片,测试结果见表1。
对比组1其组分式为:0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/ 3Nb2/3)O3+xwt%Sb2O3,相比于实施例,组分式相同,不同之处是未加入耐温度冲击稳定剂。其中m/n=0.95,x=1.5。所述组分铌锌-铌镍-铌锑-锆钛酸铅五元系所占比例为98.5wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
对比组2其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3,相比于实施例,组分式相同,不同之处是未加入耐温度冲击稳定剂。其中m/n=1.0,x=1.5。所述组分铌锌-铌镍-铌锑-锆钛酸铅五元系所占比例为98.5wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
对比组3其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3,相比于实施例,组分式相同,不同之处是未加入耐温度冲击稳定剂。其中m/n=1.05,x=1.5。所述组分铌锌-铌镍-铌锑-锆钛酸铅五元系所占比例为98.5wt%,按照实施例1方法制备压电陶瓷片,测试结果见表1。
表1 本发明的陶瓷材料性能指标对比表
综上,本发明实施例提供的耐温度冲击压电陶瓷材料及其制备方法中,通过配方的改进,制得的压电陶瓷的d33≥500pC/N,ε33 T/ε0≥2700,Kp≥0.70,电容变化率≤±3%。本发明采用的工艺简单,成本低,易于批量生产,压电性能好,降低了电容变化率,提高了瓷片的温度冲击稳定性,有利于倒车雷达灵敏度的提高,同时提高了倒车雷达的可靠性和稳定性。
以上所述的实施例是本发明一部分实施例,而不是全部的实施例。本发明的实施例的详细描述并非旨在限制要求保护的本发明范围,而是仅仅表示本发明的选定实施例。基于本发明中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明的保护范围之内。
Claims (10)
1.一种耐温度冲击的压电陶瓷材料,其特征在于,其组分式为:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05~0.95;x=1.0~2.0;y=0.5~0.8;所述组分铌锌-铌镍-锆钛酸铅四元系所占比例为97.2~98.5wt%。
2.根据权利要求1所述一种耐温度冲击的压电陶瓷材料,其特征在于,所述的m/n为1.0。
3.根据权利要求1所述一种耐温度冲击的压电陶瓷材料,其特征在于:所述的x为1.5。
4.根据权利要求1所述一种耐温度冲击的压电陶瓷材料,其特征在于:所述的y为0.7。
5.根据权利要求1所述一种耐温度冲击的压电陶瓷材料,其特征在于:所述的耐温度冲击稳定剂为:氧化铈、碳酸锂、氧化钨、三氧化二铝其中的两种或两种以上的混合物,其中CeO2占25~30wt%、Li2CO3占50~75wt%、WO3占0~10wt%、Al2O3占0~10wt%。
6.根据权利要求1-5任意一项所述的所述耐温度冲击的压电陶瓷材料的制备方法,其特征在于:具体制备步骤为:
(1)在温度为25℃,相对空气湿度≥60%下将Pb3O4、ZrO2、TiO2、ZnO、Nb2O5、Ni2O3、Sb2O3、耐温度冲击稳定剂按组分式:
0.90Pb(Zrm,Tin)O3-0.05Pb(Zn1/3Nb2/3)O3-0.05Pb(Ni1/3Nb2/3)O3+xwt%Sb2O3+ywt%耐温度冲击稳定剂,其中m/n=1.05~0.95;x=1.0~2.0;y=0.5~0.8
的化学计量比配料,行星式球磨4h,烘干,过40目筛;
(2)将过筛后的粉料,在20T压机下进行压块,然后在箱式炉中进行合成,合成温度800~900℃,按照梯度进行升温,升温速率为:3.0~3.5℃/min,保温2h后随炉冷却;
(3)将步骤(2)中合成后的坯块机械打碎并进行二次球磨,球磨时间4~8h后烘干过40目筛,随后进行挤模成型,然后放入箱式炉中,在1250~1300℃下烧结,850℃以前升温速率0.8~1.0℃/min,850℃之后升温速率2.5~3.0℃/min,保温2h后随炉冷却;
(4)烧结后瓷片进行印银,印完银后在隧道炉中烧银,烧银温度750~780℃,烧银总时间2h;然后在1.6KV/mm的电压下进行空气极化,极化时间30min,极化温度100℃,极化后静置24h,然后在-55℃~85℃下进行循环温度冲击实验,循环次数20次,循环结束后,在室温(25℃)下静置1h,再测试电容,并计算电容变化率。
7.根据权利要求6所述的耐温度冲击的压电陶瓷材料的制备方法,其特征在于,步骤(1)原料纯度均≥98%;球磨参数为:氧化锆球:原料:去离子水=2.5:1:1.2。
8.根据权利要求6所述的耐温度冲击的压电陶瓷材料的制备方法,其特征在于,步骤(2)中压机压力为20MPa,压块尺寸:Φ30*5mm。
9. 根据权利要求6所述的耐温度冲击的压电陶瓷材料的制备方法,其特征在于,步骤(3)挤模时添加的PVA为20~25wt%;挤模尺寸:Φ7.2*0.2mm;二次球磨参数为:氧化锆球:原料:去离子水=2.5:1:0.8。
10. 根据权利要求6所述的耐温度冲击的压电陶瓷材料的制备方法,其特征在于,步骤(4)提到的电容变化率(△C)计算公式为:△C=(C温冲后-C25℃)/ C25℃×100%
其中公式中:C温冲后为循环温度冲击后,静置1h,在25℃下测试瓷片的容量;
C25℃为循环温度冲击前25℃下测试瓷片的容量。
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