CN109461693A - 晶片传送装置以及晶片处理系统 - Google Patents

晶片传送装置以及晶片处理系统 Download PDF

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CN109461693A
CN109461693A CN201710795387.8A CN201710795387A CN109461693A CN 109461693 A CN109461693 A CN 109461693A CN 201710795387 A CN201710795387 A CN 201710795387A CN 109461693 A CN109461693 A CN 109461693A
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wafer
bracket
positioning groove
transfer device
chip
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CN109461693B (zh
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陈建志
李仁铎
余瑶民
李青岭
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明实施例提供一种晶片传送装置，晶片传送装置包括机械臂以及托架。机械臂用于传送晶片。托架安装在所述机械臂上并包括定位凹槽，所述定位凹槽用以夹持所述晶片的部分并将所述晶片定位于所述托架上，所述定位凹槽在所述托架的边缘处具有圆弧导角，且所述托架的最大厚度与所述定位凹槽的深度的比率介於4.85至5.17之间。

Description

晶片传送装置以及晶片处理系统
技术领域
本发明实施例涉及一种晶片传送装置以及晶片处理系统。
背景技术
半导体制造业是一系列主要工艺步骤的循环和重复。按照不同性质的处理工艺，晶片往往需要在多个半导体工艺设备的工艺腔之间通过晶片传送装置进行传输。在工艺设备内，晶片传送装置的主要功能是装载晶片，所有的装卸通常是由自动机械手臂完成。机械手臂的设计要求能使晶片平稳地传送，并能保护晶片不被损坏。
目前的机械手臂为求能缩短晶片的传送时间，往往期望能加速机械手臂的移动速度，然而，机械手臂的移动速度仍有其限度，再者，加速机械手臂的移动速度容易导致晶片滑离机械手臂的托架，或增加晶片与托架之间的碰撞，使得托架容易产生裂缝，缩短托架的使用寿命，甚至对晶片造成损伤，不但造成一定的经济损失，也影响到设备的生产效率。
发明内容
本发明实施例是针对一种晶片传送装置以及晶片处理系统，其可提升机械臂的移动速率，并可延长晶片传送装置以及晶片处理系统的使用寿命。
根据本发明的实施例，晶片传送装置包括机械臂以及托架。机械臂用于传送晶片。托架安装在所述机械臂上并包括定位凹槽，所述定位凹槽用以夹持所述晶片的部分并将所述晶片定位于所述托架上，所述定位凹槽在所述托架的边缘处具有圆弧导角，且所述托架的最大厚度与所述定位凹槽的深度的比率介於4.85至5.17之间。
附图说明
结合附图阅读以下详细说明，会最好地理解本发明实施例的各个方面。应注意，根据本行业中的标准实务，各种特征并非按比例绘制。事实上，为论述清晰起见，可任意增大或减小各种特征的尺寸。
图1是根据本发明某些示例性实施例的晶片传送装置的示意图；
图2是根据本发明某些示例性实施例的托架的示意性上视图；
图3是根据本发明某些示例性实施例的托架的示意性局部剖面图；
图4是根据本发明某些示例性实施例的晶片处理系统的示意图；
图5是根据本发明某些示例性实施例的晶片处理系统的操作示意图。
附图标号说明
10：晶片处理系统；
100：晶片传送装置；
110：机械臂；
120：托架；
122：定位凹槽；
122a：圆弧导角；
124：透气凹槽；
126：透气开口；
200a：处理腔室；
200b：处理腔室；
300：晶片装载匣；
D1：最大厚度；
D2：深度；
D3：深度；
D4：厚度；
WF：晶片。
具体实施方式
以下公开内容提供用于实作所提供主题的不同特征的许多不同的实施例或实例。以下阐述组件及排列的具体实例以简化本公开内容。当然，这些仅为实例且不旨在进行限制。举例来说，以下说明中将第一特征形成于第二特征“之上”或第二特征“上”可包括其中第一特征与第二特征被形成为直接接触的实施例，且也可包括其中所述第一特征与所述第二特征之间可形成有附加特征进而使得所述第一特征与所述第二特征可能不直接接触的实施例。另外，本公开内容可能在各种实例中重复使用参考编号及/或字母。这种重复是出于简洁及清晰的目的，而不是自身表示所论述的各种实施例及/或配置之间的关系。
此外，为易于说明，本文中可能使用例如“之下(beneath)”、“下面(below)”、“下部(lower)”、“上方(above)”、“上部(upper)”等空间相对性用语来阐述图中所示的一个元件或特征与另一(其他)元件或特征的关系。所述空间相对性用语旨在除图中所绘示的取向外还囊括装置在使用或操作中的不同取向。设备可具有其他取向(旋转90度或处于其他取向)且本文中所用的空间相对性描述语可同样相应地进行解释。
图1是根据本发明某些示例性实施例的晶片传送装置的示意图，请参照图1，本实施例的晶片传送装置100可用于在任何半导体工艺设备中传送晶片WF。在本实施例中，晶片传送装置100包括机械臂110以及托架120。机械臂110可以是用于支撑、定位、居中以及运送晶片WF的自动控制装置的一部分。机械臂110可以配置成为了运送晶片WF而进行三维运动。在图1所示的实施例中，托架120可以安装在机械臂110的悬臂端上，以用于夹持及固定晶片WF于机械臂110上。
图2是根据本发明某些示例性实施例的托架的示意性上视图。图3是根据本发明某些示例性实施例的托架的示意性局部剖面图。请参照图2及图3，托架120可包括定位凹槽122，定位凹槽122可用以夹持至少晶片WF的部份，并将晶片WF定位于所述托架120上。在本实施例中，定位凹槽122可如图2所示的延伸通过托架120，并用以夹持晶片WF的相对两侧边。在图2所示的实施例中，定位凹槽122可在托架122的边缘处具有圆弧导角122a，进一步来说，圆弧导角122a可往远离晶片WF的所述部分的方向延伸。在这样的结构配置下，圆弧导角122a的设计可以减少机械臂110移动时晶片WF与定位凹槽122之间的碰撞，因而能降低定位凹槽122因碰撞而产生裂痕或缺角的情形，进而提升托架120的使用寿命，更能防止晶片WF受到损伤。此外，由於圆弧导角122a的设计可以减少定位凹槽122因碰撞而产生裂痕或缺角的情形，机械臂110的移动速率因而可再进一步提升。
除此之外，为了提升机械臂110的移动速率，本实施例的托架120的最大厚度D1可降低，以减轻托架120的重量。并且，为了减少机械臂110快速移动时晶片WF从托架120上滑落的情形，本实施例的定位凹槽122的深度D2可加深，以提升定位凹槽122对晶片WF的夹持及定位效果。因此，为了满足上述需求且又要使托架120维持足够的结构强度，托架120的最大厚度D1与定位凹槽122的深度D2须设计为特定的比例。在本实施例中，托架120的最大厚度D1与定位凹槽122的深度D2的比率(也就是D1/D2的值)约可介於4.85至5.17之间。
进一步而言，定位凹槽122的深度D2约可介於0.48毫米(mm)至0.52毫米之间。托架120的最大厚度D1约可介於2.48毫米至2.52毫米之间。在本实施例中，托架120还可包括透气凹槽124，其中，透气凹槽124位于定位凹槽122内，晶片WF可如图3所示承靠于定位凹槽122的底面，而透气凹槽124的深度D3约大于定位凹槽122的深度D2。也就是说，晶片WF的底面会与透气凹槽124的底面之间存在气隙，因而有助于空气对流，进而帮助晶片WF进行加温或降温。在本实施例中，透气凹槽124与定位凹槽122之间的深度差(也就是D3-D2)约介於0.08毫米至0.12毫米之间。在本实施例中，透气凹槽124可包括如图3所示的具有底面的沟槽，也可包括如图2所示的贯穿托架120的透气开口126，本发明实施例并不限制透气凹槽124的数量及形式。
图4是根据本发明某些示例性实施例的晶片处理系统的示意图。请参照图1及图4，在本实施例中，前述的晶片传送装置100可适用于如图4所示的晶片处理系统10，因此，晶片处理系统10可包括前述的晶片传送装置100、至少一处理腔室200a、200b以及至少一晶片装载匣300。在此必须说明的是，图4所示的晶片传送装置100与图1所示的晶片传送装置100相同或至少相似，因此，本实施例沿用前述实施例的元件标号与部分内容，其中采用相同的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，本实施例不再重复赘述。本实施例的晶片传送装置100可用于将晶片WF传送于所述处理腔室200a、200b与所述晶片装载匣300之间。举例来说，晶片处理系统10可例如为用于快速高温处理工艺(Rapid Thermal Process，RTP)的晶片处理系统，处理腔室200a则可例如包括多个快速高温处理腔室，用来在晶片处理程序的一或多个步骤期间对晶片WF进行退火。在本实施例中，托架120的材料可包括石英，以承受热处理工艺的高温。
当然，本实施例的处理腔室200a还可用于执行各种工艺，例如物理气相沉积(PVD)、化学气相沉积(CVD)、原子层沉积(ALD)、分耦式等离子氮化(DPN)或干蚀刻工艺等，以在晶片表面上形成各种组件特征。各种组件特征可包括(但不限于)形成层间介电层、栅极介电层、多晶硅栅极、形成介层洞和沟槽、平坦化步骤以及沉积接触垫或介层洞内联机。在一实施例中，处理工艺可适于形成栅极堆栈，其中处理腔室200a可以是DPN腔室、能够沉积介电材料的CVD腔室、能够沉积多晶硅的CVD腔室、快速高温处理腔室及/或MCVD腔室。在本实施例中，处理腔室200b可例如为公设腔室(service chamber)，其适合执行除气、定位、冷却等动作。当然，所属领域中的技术人员应该了解，本发明实施例并不限制处理腔室200a、200b的种类、功能以及数量。
图5是根据本发明某些示例性实施例的晶片处理系统的操作示意图。请参照图4及图5，在本实施例中，晶片装载匣300用于装载晶片WF，其中，晶片装载匣300的数量可为多个，且各个晶片装载匣300内可装载的晶片WF数量也可为多个。机械臂110可例如旋转地移动于处理腔室200a、200b之间或是移动于处理腔室200a、200b与晶片装载匣300之间，以在处理腔室200a、200b之间或处理腔室200a、200b与晶片装载匣300之间传送晶片WF。在本实施例中，晶片装载匣300可如图5所示包括多个插槽，其分别用以容纳多个晶片WF。托架120则适合伸入晶片装载匣300的插槽内以拾取晶片WF。在本实施例中，各个插槽的厚度D4约介於5.5毫米至5.6毫米之间。在这样的结构配置下，本实施例的托架120的最大厚度D1已降低至例如介於2.48毫米至2.52毫米之间，因此，托架120在插槽内可有较大的移动余裕，进而可提升传送晶片WF时可以容许的误差，使托架120可更稳定且快速地传送晶片WF。
综上所述，在本发明实施例的晶片传送装置以及使用此晶片传送装置的晶片处理系统中，用以夹持及定位晶片的定位凹槽在托架的边缘处具有圆弧导角，如此设计可以减少机械臂移动时晶片与定位凹槽的边缘的碰撞，因而能降低定位凹槽因碰撞而产生裂痕或缺角的情形，进而提升托架的使用寿命，还能防止晶片受到损伤。此外，由於圆弧导角的设计可以减少定位凹槽因碰撞而产生裂痕或缺角的情形，机械臂的移动速率因而可再进一步提升。
此外，为了提升机械臂的移动速率，本发明实施例降低了托架的最大厚度，以减轻托架的重量，并可提升托架传送晶片时可以容许的误差，使晶片传送装置可更稳定且快速地传送晶片。并且，为了减少机械臂快速移动时晶片从托架上滑落的情形，本发明实施例加深了定位凹槽的深度，以提升定位凹槽对晶片的夹持及定位效果。因此，本发明实施例的托架的最大厚度与定位凹槽的深度被设计为特定的比例(例如介於4.85至5.17之间)，以满足上述需求并同时能使托架维持足够的结构强度。因此，本发明实施例的晶片传送装置以及使用此晶片传送装置的晶片处理系统可有效延长托架的使用寿命，还可有效提升机械臂移动的速率及稳定度，进而提升晶片处理工艺的效率以及良率。
以上概述了若干实施例的特征，以使所属领域中的技术人员可更好地理解本发明实施例的各个方面。所属领域中的技术人员应知，他们可容易地使用本发明实施例作为基础来设计或修改其他工艺及结构以施行与本文中所介绍的实施例相同的目的及/或达成与本文中所介绍的实施例相同的优点。所属领域中的技术人员还应认识到，这些等效构造并不背离本发明实施例的精神及范围，而且他们可在不背离本发明实施例的精神及范围的条件下对其作出各种改变、代替、及变更。

Claims (10)

1.一种晶片传送装置，其特征在于，包括：
机械臂，用于传送晶片；以及
托架，安装在所述机械臂上并包括定位凹槽，所述定位凹槽用以夹持所述晶片的部分并将所述晶片定位于所述托架上，所述定位凹槽在所述托架的边缘处具有圆弧导角，且所述托架的最大厚度与所述定位凹槽的深度的比率介於4.85至5.17之间。
2.根据权利要求1所述的晶片传送装置，所述定位凹槽的深度介於0.48毫米至0.52毫米之间。
3.根据权利要求1所述的晶片传送装置，所述托架的最大厚度介於2.48毫米至2.52毫米之间。
4.根据权利要求1所述的晶片传送装置，所述圆弧导角往远离所述晶片的所述部分的方向延伸。
5.根据权利要求1所述的晶片传送装置，所述托架还包括透气凹槽，位于所述定位凹槽内，所述透气凹槽的深度大于所述定位凹槽的深度，所述晶片承靠于所述定位凹槽的底面。
6.一种晶片处理系统，其特征在于，包括：
处理腔室；
晶片装载匣，用于装载晶片；
晶片传送装置，包括：
机械臂，移动于所述处理腔室与所述晶片装载匣之间；以及
托架，安装在所述机械臂上并包括定位凹槽，所述定位凹槽用以夹持所述晶片的部分并将所述晶片定位于所述托架上，且所述托架的最大厚度与所述定位凹槽的深度的比率介於4.85至5.17之间。
7.根据权利要求6所述的晶片处理系统，所述定位凹槽的深度介於0.48毫米至0.52毫米之间。
8.根据权利要求6所述的晶片处理系统，所述托架的最大厚度介於2.48毫米至2.52毫米之间。
9.根据权利要求6所述的晶片处理系统，所述圆弧导角往远离所述晶片的所述部分的方向延伸。
10.根据权利要求6所述的晶片处理系统，所述处理腔室包括快速高温处理腔室。
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