CN109460108A - Wide scope voltage regulator circuit for band-gap reference - Google Patents
Wide scope voltage regulator circuit for band-gap reference Download PDFInfo
- Publication number
- CN109460108A CN109460108A CN201811608631.6A CN201811608631A CN109460108A CN 109460108 A CN109460108 A CN 109460108A CN 201811608631 A CN201811608631 A CN 201811608631A CN 109460108 A CN109460108 A CN 109460108A
- Authority
- CN
- China
- Prior art keywords
- transistor
- band
- gap reference
- source
- module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Present disclose provides a kind of wide scope voltage regulator circuits for band-gap reference, comprising: band-gap reference module, bias voltage generation module and Current Negative Three-Point Capacitance module；Bias voltage generation module is connected with band-gap reference module, for exporting bias voltage to band-gap reference module；The bias voltage generation module includes: the first wilson current mirror circuit and the second wilson current mirror circuit, and the second wilson current mirror circuit is embedded in the first wilson current mirror circuit；Current Negative Three-Point Capacitance module is separately connected the bias voltage generation module and the band-gap reference module, provides power supply for cooperating the bias voltage generation module, and to the band-gap reference module.The disclosure provides the bias voltage and power supply of high PSRR for band-gap reference, and band-gap reference is worked normally under the conditions of the chip power of wide scope.
Description
Technical field
This disclosure relates to electronic technology field more particularly to a kind of wide scope voltage regulator circuit for band-gap reference.
Background technique
Band-gap reference is very important component part in CMOS integrated circuit, it provides accurate electric current for entire circuit
Biasing, therefore its performance is directly related to the performance of entire chip.
The target of band-gap reference is to realize the reference voltage not changed with temperature and supply voltage.Traditional band
Gap benchmark internal bias circuit is all using simple automatic biasing structure, and internal power supply also all uses system power supply, in this way
The power supply rejection ratio performance of band-gap reference be will lead to general, it is hard to meet the requirement of high-performance band-gap reference.
Therefore, how to design and realize that the band-gap reference of high PSRR is the weight that CMOS integrated circuit fields need to solve
Want problem.
Summary of the invention
(1) technical problems to be solved
It is set forth above at least partly to solve present disclose provides a kind of wide scope voltage regulator circuit for band-gap reference
The technical issues of.
(2) technical solution
According to one aspect of the disclosure, a kind of wide scope voltage regulator circuit for band-gap reference is provided, comprising: band gap
Base modules；Bias voltage generation module is connected with band-gap reference module, for exporting bias voltage to band-gap reference module；
The bias voltage generation module includes: the first wilson current mirror circuit and the second wilson current mirror circuit, and described second
Wilson current mirror circuit is embedded in the first wilson current mirror circuit；Current Negative Three-Point Capacitance module is separately connected described
Bias voltage generation module and the band-gap reference module, for cooperating the bias voltage generation module, and to the band gap
Base modules provide power supply.
In some embodiments of the present disclosure, the first wilson current mirror circuit of the bias voltage generation module
It include: third transistor, the 8th transistor, the 7th transistor, the 9th transistor and the first transistor；The third transistor
Source and the source of the 8th transistor are connected with power supply respectively, the grid end of the third transistor and the 8th crystalline substance
The grid end of body pipe is connected and is connected with the drain terminal of first node and the 7th transistor；Second node connects the 8th crystal
The drain terminal of the drain terminal of pipe, the source of the 7th transistor and the 9th transistor；Third node connects the 7th crystal
The grid end of the source of pipe and the 9th transistor.
In some embodiments of the present disclosure, the second wilson current mirror circuit of the bias voltage generation module
It include: the 6th transistor, the 14th transistor, the 5th transistor, the 11st transistor and the first transistor；Third node also connects
Connect the source of the 6th transistor and the source of the 14th transistor；Fourth node connects the grid of the 6th transistor
It holds, the drain terminal of the grid end of the 14th transistor and the 5th transistor；5th node connects the 5th transistor
The drain terminal of grid end, the drain terminal of the 14th transistor and the 11st transistor；6th node connects the 5th crystal
One end of the source of pipe, the grid end of the 11st transistor and first resistor；The other end of the first resistor and the 11st
The source of transistor is grounded.
In some embodiments of the present disclosure, the Current Negative Three-Point Capacitance module include: the 4th transistor, the tenth transistor,
The first transistor, second transistor and the tenth two-transistor；The source of 4th transistor is connected to power supply, and described
The grid end of four transistors is connected to first node, and the drain terminal of the 4th transistor is connected with the source of the tenth transistor；
7th node is separately connected the source of the grid end of the tenth transistor, the drain terminal of the tenth transistor, the first transistor
The source at end and the second transistor；The grid end of the first transistor and the grid end of the second transistor are connected to biased electrical
Position；The drain terminal of the first transistor is connected to fourth node；The drain terminal of the second transistor and the tenth two-transistor
Source is connected；The grid end of tenth two-transistor and the drain terminal of the tenth two-transistor are grounded.
In some embodiments of the present disclosure, the third transistor, the 8th transistor and the first transistor select PMOS
Transistor npn npn；7th transistor, the 9th transistor select NMOS type transistor.
In some embodiments of the present disclosure, the 6th transistor, the 14th transistor and the first transistor are selected
Pmos type transistor；5th transistor, the 11st transistor select NMOS type transistor.
In some embodiments of the present disclosure, the 4th transistor, the tenth transistor, the first transistor, second transistor and
Tenth two-transistor selects pmos type transistor.
(3) beneficial effect
It can be seen from the above technical proposal that the disclosure for band-gap reference wide scope voltage regulator circuit at least have it is following
One of beneficial effect or in which a part:
(1) disclosure provides the bias voltage and power supply of high PSRR for band-gap reference, so that band gap base
Standard can work normally under the conditions of the chip power of wide scope.
(2) bias-voltage generating circuit that the disclosure provides is by two nested Wilson's bias current microscope groups at can
Make to export electric current and the bias voltage of offer does not change with supply voltage.
Detailed description of the invention
Fig. 1 is schematic diagram of the embodiment of the present disclosure for the wide scope voltage regulator circuit of band-gap reference.
Fig. 2 is the simulation curve schematic diagram that the band-gap reference supply voltage that the disclosure provides changes with chip power.
Specific embodiment
Present disclose provides a kind of wide scope voltage regulator circuits for band-gap reference, comprising: band-gap reference module, biased electrical
Press generation module and Current Negative Three-Point Capacitance module；Bias voltage generation module is connected with band-gap reference module, is used for band-gap reference
Module exports bias voltage；The bias voltage generation module includes: the first wilson current mirror circuit and the second Wilson's electricity
Current mirror circuit, the second wilson current mirror circuit are embedded in the first wilson current mirror circuit；Current Negative Three-Point Capacitance
Module is separately connected the bias voltage generation module and the band-gap reference module, for cooperating the bias voltage to generate mould
Block, and power supply is provided to the band-gap reference module.The disclosure for band-gap reference provide the bias voltage of high PSRR with
And power supply, band-gap reference is worked normally under the conditions of the chip power of wide scope.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Disclosure some embodiments will be done referring to appended attached drawing in rear and more comprehensively describe to property, some of but not complete
The embodiment in portion will be shown.In fact, the various embodiments of the disclosure can be realized in many different forms, and should not be construed
To be limited to this several illustrated embodiment；Relatively, these embodiments are provided so that the disclosure meets applicable legal requirement.
In first exemplary embodiment of the disclosure, a kind of wide scope pressure stabilizing electricity for band-gap reference is provided
Road.Fig. 1 is schematic diagram of the embodiment of the present disclosure for the wide scope voltage regulator circuit of band-gap reference.As shown in Figure 1, the disclosure is used for
The wide scope voltage regulator circuit of band-gap reference includes: bias voltage generation module 10, Current Negative Three-Point Capacitance module 20 and band-gap reference mould
Block 30；Band-gap reference module 30, as LDO core circuit portions；Bias voltage generation module 10 is connected with band-gap reference module,
For exporting bias voltage to band-gap reference module；The bias voltage generation module includes: the first wilson current mirror circuit
With the second wilson current mirror circuit, the second wilson current mirror circuit is embedded at the first wilson current mirror circuit
It is interior；Current Negative Three-Point Capacitance module 20 is separately connected the bias voltage generation module and the band-gap reference module, for cooperating
Bias voltage generation module is stated, and provides power supply to the band-gap reference module.
Wherein, the first wilson current mirror circuit of the bias voltage generation module includes: third transistor,
Eight transistors, the 7th transistor, the 9th transistor and the first transistor；The source of the third transistor M3 and the 8th crystalline substance
The source of body pipe M8 is connected with power supply VCC respectively, the grid end of the third transistor M3 and the 8th transistor M8's
Grid end is connected and is connected with the drain terminal of first node 1 and the 7th transistor M7；Second node 2 connects the 8th transistor
The drain terminal of the drain terminal of M8, the source of the 7th transistor M7 and the 9th transistor M9；Third node 3 connects the described 7th
The grid end of the source of transistor M7 and the 9th transistor M9.Second Wilson's electricity of the bias voltage generation module
Current mirror circuit includes: the 6th transistor, the 14th transistor, the 5th transistor, the 11st transistor and the first transistor；Third
Node 3 is also connected with the source of the 6th transistor M6 and the source of the 14th transistor M14；Fourth node 4 connects institute
State the grid end, the grid end of the 14th transistor M14 and the drain terminal of the 5th transistor M5 of the 6th transistor M6；Section five,
Point 5 connects the drain terminal and the 11st transistor M11 of the grid end of the 5th transistor M5, the 14th transistor M14
Drain terminal；6th node 6 connects the source of the 5th transistor M5, the grid end of the 11st transistor M11 and the first electricity
Hinder one end of R1；The other end of the first resistor R1 and the source of the 11st transistor M11 are grounded.
Further, the output electric current I of the bias voltage generation module 10bValue can by formula (1) determine.
Wherein, I8=I7=kI6=kIb, I7、I8Respectively flow through the electric current of the 7th transistor M7 and the 8th transistor M8.
The power supply rejection ratio PSR of the bias voltage generation module 10 can be solved with small-signal model, be indicated are as follows:
The output electric current PSR for embedded double wilson current mirror circuits that the bias voltage generation module 10 provides is single
The g of a wilson current mirror circuit output current PSRmroTimes, it can achieve 160dB or more under normal circumstances, it is believed that this
The open output electric current of bias voltage generation module 10 provided and the bias voltage of offer will not be sent out substantially with supply voltage
Changing.
Further, third transistor, the 8th transistor, the first transistor, the 6th transistor, the 14th transistor and
One transistor selects pmos type transistor；7th transistor, the 9th transistor, the 5th transistor, the choosing of the 11st transistor
Use NMOS type transistor.
Wherein, the Current Negative Three-Point Capacitance module include: the 4th transistor M4, the tenth transistor M10, the first transistor M1,
Second transistor M2 and the tenth two-transistor M12；The source of the 4th transistor M4 is connected to power supply VCC, and described
The grid end of four transistor M4 is connected to first node 1, the drain terminal of the 4th transistor M4 and the source of the tenth transistor M10
End is connected；7th node 7 is separately connected the drain terminal, described of the grid end of the tenth transistor M10, the tenth transistor M10
The source of the source of the first transistor M1 and the second transistor M2；The grid end of the first transistor M1 and second crystalline substance
The grid end of body pipe M2 is connected to bias potential Vb；The drain terminal of the first transistor M1 is connected to fourth node 4；The second transistor
The drain terminal of M2 is connected with the source of the tenth two-transistor M12；The grid end and the 12nd crystal of the tenth two-transistor M12
The drain terminal of pipe M12 is grounded.
The electric current Ifb of Current Negative Three-Point Capacitance module 20 keeps not becoming with supply voltage VCC by way of negative-feedback
Change, so that being remained unchanged for 7 voltage of node that band-gap reference module 30 provides power supply.Concrete principle is as follows:
When the electric current of band-gap reference module 30 increases, the electric current for flowing through the first transistor M1 is inherently reduced, to make
The electric current that the 6th transistor M6 must be flowed through will increase, and will lead to the electricity for flowing through third transistor M3 and the 4th transistor M4 in this way
Stream will increase, and the supply voltage of band-gap reference circuit can be made not become with load current by suitable feedback proportional
Change.Similarly, when the electric current of band-gap reference module 30 is reduced, the electric current for flowing through the first transistor M1 be will increase, so that stream
The electric current for crossing the 6th transistor M6 can be reduced, and the electric current that will lead to the 4th transistor M4 in this way can be reduced, final to guarantee band gap base
The voltage of quasi-mode block 30 will not change.
The breadth length ratio of the first transistor M1 and second transistor M2 determine feedback proportional, the main work of second transistor M2
With being the extra electric current of bleed off.Assuming that the breadth length ratio of the 4th transistor M4 and third transistor M3 is k1, the first transistor M1 and
The breadth length ratio of second transistor M2 is k2, then the electric current I of Current Negative Three-Point Capacitance modulefbIt can indicate are as follows:
K under normal circumstances1> > k2, (3) formula can simplify for
Wherein, IbFor the output electric current of bias voltage generation module；
By formula (2) it is found that IbSubstantially will not change with VCC, so IfbSubstantially will not change with VCC.For formula (4)
It can be seen that load current IloadInfluence to feedback current has decayed k1Times, but k1Can not be too big, under extreme case, Ifb
≈Ib, will lead to wilson current mirror cisco unity malfunction in this way.
The supply voltage V of band-gap referenceDDLThan supply voltage VDDHA low VGS+Vdsat, thus realize buck functionality, VDDL
It is determined by formula (5).
By selecting suitable breadth length ratio and VbValue, V can be madeDDLStablize in 2.5V or so, this value is substantially not
It can be with chip supply voltage VCC (VDDH) variation.Fig. 2 is that the band-gap reference supply voltage that the disclosure provides changes with chip power
Simulation curve schematic diagram.As shown in Fig. 2, band-gap reference operating voltage VDDLWith chip supply voltage VDDHVariation emulate knot
Fruit, it can be seen that as chip operating voltage VDDHAt the section 3.6-6V, it is supplied to the operating voltage (V of band-gap referenceDDL) always
Stablize in 2.5V.
Specifically, the 4th transistor M4, the tenth transistor M10, the first transistor M1, second transistor M2 and the 12nd
Transistor M12 selects pmos type transistor.
So far, attached drawing is had been combined the embodiment of the present disclosure is described in detail.It should be noted that in attached drawing or saying
In bright book text, the implementation for not being painted or describing is form known to a person of ordinary skill in the art in technical field, and
It is not described in detail.In addition, the above-mentioned definition to each element and method be not limited in mentioning in embodiment it is various specific
Structure, shape or mode, those of ordinary skill in the art simply can be changed or be replaced to it.
According to above description, those skilled in the art should have the disclosure for the wide scope voltage regulator circuit of band-gap reference
Clear understanding.
In conclusion the disclosure provides a kind of wide voltage stabilized range circuit applied to band-gap reference circuit, the circuit is not only
The bias voltage of high PSRR can be provided for band-gap reference, can also be provided for band-gap reference substantially not with chip operation
The supply voltage of voltage change reduces band gap base the advantage of doing so is that the power supply rejection ratio of band-gap reference can be greatly improved
The design difficulty of quasi- internal amplifier, and band-gap reference can be made to work normally in wide chip power supply voltage range.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (7)
1. a kind of wide scope voltage regulator circuit for band-gap reference, comprising:
Band-gap reference module；
Bias voltage generation module is connected with band-gap reference module, for exporting bias voltage to band-gap reference module；It is described inclined
Setting voltage generating module includes: the first wilson current mirror circuit and the second wilson current mirror circuit, second Wilson's
Current mirroring circuit is embedded in the first wilson current mirror circuit；
Current Negative Three-Point Capacitance module is separately connected the bias voltage generation module and the band-gap reference module, for cooperating
Bias voltage generation module is stated, and provides power supply to the band-gap reference module.
2. wide scope voltage regulator circuit according to claim 1, wherein first prestige of the bias voltage generation module
Your inferior current mirroring circuit includes: third transistor, the 8th transistor, the 7th transistor, the 9th transistor and the first transistor；Institute
The source of the source and the 8th transistor of stating third transistor is connected with power supply respectively, the grid of the third transistor
The grid end of end and the 8th transistor is connected and is connected with the drain terminal of first node and the 7th transistor；Second node connects
Connect drain terminal, the source of the 7th transistor and the drain terminal of the 9th transistor of the 8th transistor；Third node connects
Connect the source of the 7th transistor and the grid end of the 9th transistor.
3. wide scope voltage regulator circuit according to claim 2, wherein second prestige of the bias voltage generation module
Your inferior current mirroring circuit includes: the 6th transistor, the 14th transistor, the 5th transistor, the 11st transistor and first crystal
Pipe；Third node is also connected with the source of the 6th transistor and the source of the 14th transistor；Fourth node connects institute
State the grid end, the grid end of the 14th transistor and the drain terminal of the 5th transistor of the 6th transistor；The connection of 5th node
Grid end, the drain terminal of the 14th transistor and the drain terminal of the 11st transistor of 5th transistor；6th node
Connect the source, the grid end of the 11st transistor and one end of first resistor of the 5th transistor；The first resistor
The other end and the source of the 11st transistor be grounded.
4. wide scope voltage regulator circuit according to claim 1, wherein the Current Negative Three-Point Capacitance module includes: the 4th crystal
Pipe, the tenth transistor, the first transistor, second transistor and the tenth two-transistor；The source of 4th transistor is connected to
Power supply, the grid end of the 4th transistor are connected to first node, the drain terminal of the 4th transistor and the tenth crystalline substance
The source of body pipe is connected；7th node is separately connected the drain terminal, described of the grid end of the tenth transistor, the tenth transistor
The source of the source of the first transistor and the second transistor；The grid end of the first transistor and the second transistor
Grid end is connected to bias potential；The drain terminal of the first transistor is connected to fourth node；The drain terminal of the second transistor and described
The source of tenth two-transistor is connected；The grid end of tenth two-transistor and the drain terminal of the tenth two-transistor are grounded.
5. wide scope voltage regulator circuit according to claim 2, wherein the third transistor, the 8th transistor and first
Transistor selects pmos type transistor；7th transistor, the 9th transistor select NMOS type transistor.
6. wide scope voltage regulator circuit according to claim 3, wherein the 6th transistor, the 14th transistor and
One transistor selects pmos type transistor；5th transistor, the 11st transistor select NMOS type transistor.
7. wide scope voltage regulator circuit according to claim 4, wherein the 4th transistor, the tenth transistor, first crystal
Pipe, second transistor and the tenth two-transistor select pmos type transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608631.6A CN109460108B (en) | 2018-12-26 | 2018-12-26 | Wide-range voltage stabilizing circuit for band-gap reference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811608631.6A CN109460108B (en) | 2018-12-26 | 2018-12-26 | Wide-range voltage stabilizing circuit for band-gap reference |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109460108A true CN109460108A (en) | 2019-03-12 |
| CN109460108B CN109460108B (en) | 2020-05-22 |
Family
ID=65614867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811608631.6A Expired - Fee Related CN109460108B (en) | 2018-12-26 | 2018-12-26 | Wide-range voltage stabilizing circuit for band-gap reference |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109460108B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086487A (en) * | 2019-04-19 | 2019-08-02 | 中国电子科技集团公司第五十八研究所 | A kind of broadband Larger Dynamic range logarithmic detector |
| CN111240395A (en) * | 2020-01-20 | 2020-06-05 | 中国电子科技集团公司第二十四研究所 | Reference voltage source with high power supply rejection ratio |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041551A1 (en) * | 2002-09-03 | 2004-03-04 | Mottola Michael J. | Bootstrap reference circuit including a peaking current source |
| US20100148857A1 (en) * | 2008-12-12 | 2010-06-17 | Ananthasayanam Chellappa | Methods and apparatus for low-voltage bias current and bias voltage generation |
| CN102591392A (en) * | 2012-02-01 | 2012-07-18 | 深圳创维－Rgb电子有限公司 | Low-dropout linear regulator and chip |
| CN103558890A (en) * | 2013-09-18 | 2014-02-05 | 中国矿业大学 | Band-gap reference voltage source design with high gain and high rejection ratio |
| CN108880254A (en) * | 2018-08-20 | 2018-11-23 | 电子科技大学 | A kind of pre-biased circuit applied to DC-DC converter |
-
2018
- 2018-12-26 CN CN201811608631.6A patent/CN109460108B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041551A1 (en) * | 2002-09-03 | 2004-03-04 | Mottola Michael J. | Bootstrap reference circuit including a peaking current source |
| US20100148857A1 (en) * | 2008-12-12 | 2010-06-17 | Ananthasayanam Chellappa | Methods and apparatus for low-voltage bias current and bias voltage generation |
| CN102591392A (en) * | 2012-02-01 | 2012-07-18 | 深圳创维－Rgb电子有限公司 | Low-dropout linear regulator and chip |
| CN103558890A (en) * | 2013-09-18 | 2014-02-05 | 中国矿业大学 | Band-gap reference voltage source design with high gain and high rejection ratio |
| CN108880254A (en) * | 2018-08-20 | 2018-11-23 | 电子科技大学 | A kind of pre-biased circuit applied to DC-DC converter |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086487A (en) * | 2019-04-19 | 2019-08-02 | 中国电子科技集团公司第五十八研究所 | A kind of broadband Larger Dynamic range logarithmic detector |
| CN110086487B (en) * | 2019-04-19 | 2021-03-19 | 中国电子科技集团公司第五十八研究所 | Wide-band large-dynamic-range logarithmic detector |
| CN111240395A (en) * | 2020-01-20 | 2020-06-05 | 中国电子科技集团公司第二十四研究所 | Reference voltage source with high power supply rejection ratio |
| CN111240395B (en) * | 2020-01-20 | 2021-12-21 | 中国电子科技集团公司第二十四研究所 | Reference voltage source with high power supply rejection ratio |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109460108B (en) | 2020-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103412606A (en) | Band gap reference voltage source | |
| US8368377B2 (en) | Voltage regulator architecture | |
| CN102385412B (en) | Low-voltage band-gap reference source generating circuit | |
| CN107272818B (en) | A kind of high voltage band-gap reference circuit structure | |
| US7863883B2 (en) | Low-voltage current reference and method thereof | |
| CN102419609B (en) | Reference voltage and reference current generating circuit | |
| CN114200994B (en) | Low dropout linear regulator and laser ranging circuit | |
| CN107528576A (en) | A kind of high performance switch power supply chip trims circuit | |
| CN108369428A (en) | The temperature compensated voltage reference generator of across resistor application controlled voltage | |
| CN109460108A (en) | Wide scope voltage regulator circuit for band-gap reference | |
| CN108594924A (en) | A kind of band-gap reference voltage circuit of super low-power consumption whole CMOS subthreshold work | |
| CN205540381U (en) | Accurate excess temperature protection circuit of current feedback formula | |
| CN107066006B (en) | A kind of novel band-gap reference circuit structure | |
| CN209433274U (en) | A kind of constant current generative circuit structure of automatic biasing | |
| CN115877907A (en) | Band-gap reference source circuit | |
| CN109828630B (en) | Low-power-consumption reference current source irrelevant to temperature | |
| CN105425891A (en) | Zero-temperature coefficient adjustable voltage reference source | |
| CN109343641A (en) | A kind of high-precision current reference circuit | |
| CN109683006A (en) | Semiconductor device | |
| CN202171758U (en) | Band-gap reference voltage circuit | |
| CN114995573B (en) | Low dropout regulator modified by feedback network | |
| CN115903987A (en) | Novel Zener reference circuit | |
| CN109917843A (en) | A kind of the constant current generative circuit structure and constant current generation method of automatic biasing | |
| CN208459892U (en) | A kind of band-gap reference voltage circuit of super low-power consumption whole CMOS subthreshold work | |
| CN205176717U (en) | Zero adjustable voltage reference source of temperature coefficient |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200522 Termination date: 20211226 |