CN107528576A - A kind of high performance switch power supply chip trims circuit - Google Patents
A kind of high performance switch power supply chip trims circuit Download PDFInfo
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- CN107528576A CN107528576A CN201610456465.7A CN201610456465A CN107528576A CN 107528576 A CN107528576 A CN 107528576A CN 201610456465 A CN201610456465 A CN 201610456465A CN 107528576 A CN107528576 A CN 107528576A
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- circuit
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- voltage
- trims
- high performance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
Abstract
A kind of high performance switch power supply chip trims circuit, suitable for field of power supplies.Trim circuit by antifuse trim element circuit, biasing circuit, controlling switch UV/OV modular circuits, high-voltage current source, trim mode switching circuit, line voltage latches over-voltage detection circuit, latches sluggish overvoltage circuit forms.Scheme is trimmed using diode antifuse, the production technology compatibility of the chip is good after trimming, and implements cheap, avoids the influence of encapsulation, precision is higher.
Description
Art
The present invention relates to a kind of high performance switch power supply chip to trim circuit, suitable for field of power supplies.
Background technology
At present, power equipment and electronic product oneself through fully having come into the production and living of people, and any electrical equipment
Equipment is required for power-supply system to provide reliable and stable power supply for it.Switch power supply system since the sixties in last century come out with
Come, the features such as by its small-sized, light and high efficiency, progressively instead of conventional bulky linear stable, and receive more
Carry out more concerns.At present, Switching Power Supply oneself through being applied among various field of power electronics.
And the fast development of integrated circuit technique, also make it that switch power supply system is little by little integrated.Switching power source chip,
Also referred to as power management chip, among previous many peripheral discrete devices are integrated into a power supply chip, by by power
Being fully integrated such as pipe, pwm control circuit and soft starting circuit, further reduce the volume and again of whole power-supply system
Amount.
In order to improve the performance of whole power-supply system, power supply chip has extremely important meaning as its core, its selection.
In the entire system, power supply chip is responsible for the power management of whole system, including the conversion of electric energy, the distribution of electric energy and detection
Etc. a series of functions, thus the performance of power supply chip will directly affect the good of whole power-supply system and whole electronic equipment
It is bad.In addition, electronic system is also easily acted by power switch and causes interference, thus, how to reduce electromagnetic interference
It is one of power supply chip major issue to be solved, many power supply chips are handled the driving frequency of power tube, to reduce
Electromagnetic interference, reduce noise.It can be seen that the performance for improving power management chip plays important work to the performance of this electronic system
With.For analog circuit, chip is determined with regard to oneself and can not changed once flow, the correlation properties of circuit.However, by technique ring
The non-ideal factors such as border influence, and some parameters simultaneously do not meet expected design, cause the precision of chip and performance and expection after flow
Differ greatly.In order to make up the gap between circuit design expectation and chip final performance, in recent years, for large-scale integrated electricity
The technology that trims on road is continuously available development.At the same time, switching power source chip also just towards high-performance, high accuracy, small size with
And the direction of low cost is developed, thus using it is suitable trim means power supply chip is trimmed it is very necessary.
The content of the invention
The present invention provides a kind of high performance switch power supply chip and trims circuit, trims scheme using diode antifuse, repaiies
The production technology compatibility of the chip is good after tune, and implements cheap, avoids the influence of encapsulation, precision is higher.
The technical solution adopted in the present invention is：
High performance switch power supply chip trims circuit and trims element circuit, biasing circuit, controlling switch UV/OV modules by antifuse
Circuit, high-voltage current source, trim mode switching circuit, line voltage latch over-voltage detection circuit, latch sluggish overvoltage circuit composition.
The antifuse is trimmed in element circuit, and Zener diode is exactly to trim diode as antifuse.For biased electrical
The bias voltage that road is provided.BIT selects the output of the input nand gate of signal four as position, i.e. count status output is connected.
During forever trimming, counter starts counting up, when the BIT signals that count status makes accordingly to trim unit are low
When, the unit is selected, and now controlling PTRIM-EN, then M0, M1 branch roads have electric current to flow through to be low, and M3 is one and fallen than pipe, pipe
The breadth length ratio very little of son, draws high M4 base potentials, and M4 is turned on and is in depth linear zone, is controlled by outside, by VCC voltages
Draw high to more than the breakdown voltage of Zener diode, the PN junction of diode is formed permanent path by thermal breakdown.For not
Need to trim trims unit, and PTRIM-EN and BIT signals will not be simultaneously to be low, and M4 cut-offs, diode Z1 will not be breakdown, instead
Inclined PN junction is equivalent to off state.
In the biasing circuit, M5, M6 are exactly two metal-oxide-semiconductors for trimming last output stage in unit.VREF comes from benchmark,
Electric current i.e. in M7 mirror images benchmark.By M8 and M6 mirroring ratios relation, bias voltage Vbias2 can be obtained, and voltage
Vbiasl be by current mirror M8-M9, what M10-M5 mirror obtained.
The main function of the controlling switch UV/OV modular circuits be control PINC pin voltages, that is, in chip it is low
The supply voltage VCC of volt circuit, is maintained at 5.8V or so, and metastable power supply electricity is provided for the control section of whole chip
Source.The circuit also controls the on off state of internal high pressure current source, in chip start-up course, opens high-voltage current source, passes through
Chip pin PIND is charged to the electric capacity being connected with PINC pins, and is kept in chip start-up course, and voltage stabilization exists
5.8V is constant, and after startup terminates, high-voltage current source is closed in control.The comparator of the inside modules is used as error amplifier,
It is responsible for the feedback current of control chip, so as to change PWM duty cycle.In addition, when external system breaks down, module control
High-voltage current source is constantly opened and shut off, and PINC pin voltages is switched repeatedly between 4.8V and 5.8V, as in chip
Portion restarts the clock input of counter automatically.
COMP2 is an error amplifier in circuit, and when chip status is normal, PINC voltages are in 5.8V or so, feedback
Electric current flows into PINC pins, and the change of foreign current causes the voltage of COMP2 negative sense sampling ends to change, by defeated with benchmark
The reference voltage for going out PREF BG ends compares, output error signal PUV FB, MP1 and MP2 grid is controlled, so as to control on MP2
The size for flowing through electric current is input in PWM, and PWM cans are by the size of current, into different working modes.
In the high-tension current source circuit, metal-oxide-semiconductor MH0 exhausts pipe for high pressure 700V's, and its threshold voltage is about -3V.Separately
Outer two metal-oxide-semiconductors MH1, MH2 are pressure-resistant also in 20V or so.Resistance and diode in circuit provide properly for high-voltage current source
Biasing and circuit protection.By circuit structure, when the PUV OUT1 of UV comparison modules output are high, i.e. control is drawn
During pin overvoltage, MH1 is opened, and is turned off so as to MH2 grid potential for 0, NH2, and external bypass capacitors electric discharge makes controlling switch PINC
Terminal voltage VCC is reduced；When PUV-OUT1 is low, i.e., when under-voltage, MH1 shut-offs, MH2 is opened, external capacitive charging, VCC rises.
Described to trim in mode switching circuit, PTRIM-SET2 comes from UV comparison modules described previously, PAUTO-S13 signals
It is meter
The count status S13 of number device output signal, when counter is in S13 states, the signal is high level, otherwise to be low
Level.PRST2 is the power-on reset signal of chip, and upper electric original state signal is low level, and electrification reset terminates, the signal
Remain high level.
In chip normal use, above establish by cable the beginning, PRST2 is low, and the R ends for making S/R latch are level, and S ends are high electricity
Flat, positive output end Q is low level, and inverse output terminal QN is high level.Hereafter, because PTRIM-SET2 is low level, and
PRST2 is uprised after resetting, so SR3 S ends are high level with R ends, SR3 will be in hold mode, and output no longer becomes
Change.And then PTR work M SET3 remain low level, PTRIM-SET5 is low level, and PTRIM-SET4 is high level, makes this
Three signals will not interfere during normal use to the response of circuit.
In the latch over-voltage detection circuit of the line voltage, PINV is outer lines voltage sense pin, Ibiasl with
Ibias2 and Vbiasl be respectively by bias current biasing appropriate caused by chip reference circuit and mirror with
Voltage.Metal-oxide-semiconductor MN5~MN16 forms low pressure cascode structure, and MN6, MN8, MN10, MN12, MN14, MN16,
The breadth length ratio of MN18 pipes is identical, MN5, MN7, MN9, MN11, MN13, MN15, MN17 pipes breadth length ratio also it is identical so as to
The electric current for obtaining each image current branch road I1~I7 that they form is essentially equal.PVL-B1 and PVL-B2 passes through electric current I7 groups
Into the biasing of another low pressure cascode structure, bias current is provided for subsequent conditioning circuit.
Described to latch in sluggish overvoltage circuit, PTRIM SET3 signals are responsible for pre- trim from module is restarted automatically
One signal of interest of pattern.The signal is high level when chip is in and trims pattern in advance, and normal use mould is in chip
During formula, low level is kept.PVL-OUT3 is under-voltage output signal caused by chips wire voltage detection module, when chip is in under-voltage
During state, the signal is low level, is otherwise high level.MN31 threshold voltage is about 1V, trims or repaiies in advance when chip is in
Under mode transfer formula,
PTRIM-SET3 is height, MN29 cut-offs, shields PVL-OUT3 and PVL-OV4 signals influence.Draw outside by control
When pin V low level is less than 1V, MN31 cut-offs, MN32 conductings, PVL-OUT1 output low levels.When the voltage of V pins is higher than 1V
When, MN31 conductings, MN32 cut-offs, PVL-OUT1 output high level.
The beneficial effects of the invention are as follows：Scheme is trimmed using diode antifuse, the production technology of the chip is simultaneous after trimming
Capacitive is good, and implements cheap, avoids the influence of encapsulation, precision is higher.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
The antifuse that Fig. 1 is the present invention trims element circuit.
Fig. 2 is the biasing circuit of the present invention.
Fig. 3 is the controlling switch UV/OV modular circuits of the present invention.
Fig. 4 is the high-voltage current source of the present invention.
Fig. 5 be the present invention trim mode switching circuit.
The line voltage that Fig. 6 is the present invention latches over-voltage detection circuit.
Fig. 7 is the latch sluggishness overvoltage circuit of the present invention.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Such as Fig. 1, antifuse is trimmed in element circuit, and Zener diode is exactly to trim diode as antifuse.For biasing
The bias voltage that circuit is provided.BIT selects the output of the input nand gate of signal four as position, i.e. count status output is connected.
During forever trimming, counter starts counting up, when the BIT signals that count status makes accordingly to trim unit are low
When, the unit is selected, and now controlling PTRIM-EN, then M0, M1 branch roads have electric current to flow through to be low, and M3 is one and fallen than pipe, pipe
The breadth length ratio very little of son, draws high M4 base potentials, and M4 is turned on and is in depth linear zone, is controlled by outside, by VCC voltages
Draw high to more than the breakdown voltage of Zener diode, the PN junction of diode is formed permanent path by thermal breakdown.For not
Need to trim trims unit, and PTRIM-EN and BIT signals will not be simultaneously to be low, and M4 cut-offs, diode Z1 will not be breakdown, instead
Inclined PN junction is equivalent to off state.
Such as Fig. 2, in biasing circuit, M5, M6 are exactly two metal-oxide-semiconductors for trimming last output stage in unit.VREF comes from base
Standard, i.e., the electric current in electric current work M7 mirror image benchmark on M7.By M8 and M6 mirroring ratios relation, bias voltage can be obtained
Vbias2, and voltage Vbiasl be by current mirror M8-M9, what M10-M5 mirror obtained.
Such as Fig. 3, the main function of pin UV/OV modular circuits processed is control PINC pin voltages, that is, in chip it is low
The supply voltage VCC of volt circuit, is maintained at 5.8V or so, and metastable power supply electricity is provided for the control section of whole chip
Source.The circuit also controls the on off state of internal high pressure current source, in chip start-up course, opens high-voltage current source, passes through
Chip pin PIND is charged to the electric capacity being connected with PINC pins, and is kept in chip start-up course, and voltage stabilization exists
5.8V is constant, and after startup terminates, high-voltage current source is closed in control.The comparator of the inside modules is used as error amplifier,
It is responsible for the feedback current of control chip, so as to change PWM duty cycle.In addition, when external system breaks down, module control
High-voltage current source is constantly opened and shut off, and PINC pin voltages is switched repeatedly between 4.8V and 5.8V, as in chip
Portion restarts the clock input of counter automatically.
COMP2 is an error amplifier in circuit, and when chip status is normal, PINC voltages are in 5.8V or so, feedback
Electric current flows into PINC pins, and the change of foreign current causes the voltage of COMP2 negative sense sampling ends to change, by defeated with benchmark
The reference voltage for going out PREF BG ends compares, output error signal PUV FB, MP1 and MP2 grid is controlled, so as to control on MP2
The size for flowing through electric current is input in PWM, and PWM cans are by the size of current, into different working modes.
Such as Fig. 4, in high-tension current source circuit, metal-oxide-semiconductor MH0 is that high pressure 700V exhausts pipe, and its threshold voltage is about -3V.
Two other metal-oxide-semiconductor MH1, MH2 is pressure-resistant also in 20V or so.Resistance and diode in circuit provide conjunction for high-voltage current source
Suitable biasing and circuit protection.By circuit structure, when the PUV OUT1 of UV comparison modules output are high, that is, control
During pin overvoltage, MH1 is opened, and is turned off so as to MH2 grid potential for 0, NH2, and external bypass capacitors electric discharge makes controlling switch
PINC terminal voltages VCC is reduced；When PUV-OUT1 is low, i.e., when under-voltage, MH1 shut-offs, MH2 is opened, external capacitive charging, VCC liters
It is high.
Such as Fig. 5, trim in mode switching circuit, PTRIM-SET2 comes from UV comparison modules described previously, PAUTO-S13 letters
Number it is meter
The count status S13 of number device output signal, when counter is in S13 states, the signal is high level, otherwise to be low
Level.PRST2 is the power-on reset signal of chip, and upper electric original state signal is low level, and electrification reset terminates, the signal
Remain high level.
In chip normal use, above establish by cable the beginning, PRST2 is low, and the R ends for making S/R latch are level, and S ends are high electricity
Flat, positive output end Q is low level, and inverse output terminal QN is high level.Hereafter, because PTRIM-SET2 is low level, and
PRST2 is uprised after resetting, so SR3 S ends are high level with R ends, SR3 will be in hold mode, and output no longer becomes
Change.And then PTR work M SET3 remain low level, PTRIM-SET5 is low level, and PTRIM-SET4 is high level, makes this
Three signals will not interfere during normal use to the response of circuit.
Such as Fig. 6, in the latch over-voltage detection circuit of line voltage, PINV is outer lines voltage sense pin, Ibiasl with
Ibias2 and Vbiasl be respectively by bias current biasing appropriate caused by chip reference circuit and mirror with
Voltage.Metal-oxide-semiconductor MN5~MN16 forms low pressure cascode structure, and MN6, MN8, MN10, MN12, MN14, MN16,
The breadth length ratio of MN18 pipes is identical, MN5, MN7, MN9, MN11, MN13, MN15, MN17 pipes breadth length ratio also it is identical so as to
The electric current for obtaining each image current branch road I1~I7 that they form is essentially equal.PVL-B1 and PVL-B2 passes through electric current I7 groups
Into the biasing of another low pressure cascode structure, bias current is provided for subsequent conditioning circuit.
Such as Fig. 7, latch in sluggish overvoltage circuit, PTRIM SET3 signals are responsible for pre- repair from module is restarted automatically
One signal of interest of mode transfer formula.The signal is high level when chip is in and trims pattern in advance, and normal use is in chip
During pattern, low level is kept.PVL-OUT3 is under-voltage output signal caused by chips wire voltage detection module, is owed when chip is in
During pressure condition, the signal is low level, is otherwise high level.MN31 threshold voltage is about 1V, is trimmed or in advance when chip is in
Trim under pattern.
PTRIM-SET3 is height, MN29 cut-offs, shields PVL-OUT3 and PVL-OV4 signals influence.Made by control outer
When portion pin V low level is less than 1V, MN31 cut-offs, MN32 conductings, PVL-OUT1 output low levels.When the voltage of V pins is high
When 1V, MN31 conductings, MN32 cut-offs, PVL-OUT1 output high level.
Claims (9)
1. a kind of high performance switch power supply chip trims circuit, it is characterized in that：The described circuit that trims trims unit by antifuse
Circuit, biasing circuit, controlling switch UV/OV modular circuits, high-voltage current source, trim mode switching circuit, line voltage latched
Pressure detection circuit, latch sluggish overvoltage circuit composition.
2. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：The antifuse is repaiied
To adjust in element circuit, Zener diode is exactly to trim diode as antifuse, the bias voltage provided by biasing circuit,
BIT selects the output of the input nand gate of signal four as position, i.e. count status output is connected.
3. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：Described biased electrical
Lu Zhong, M5, M6 are exactly two metal-oxide-semiconductors for trimming last output stage in unit, and VREF comes from benchmark, i.e. electricity in M7 mirror images benchmark
Stream.
4. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：Described control is drawn
The main function of pin UV/OV modular circuits is to control PINC pin voltages, that is, the supply voltage of chip mesolow circuit
VCC, 5.8V or so is maintained at, metastable power supply is provided for the control section of whole chip.
5. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：The high-tension current
In source circuit, metal-oxide-semiconductor MH0 exhausts pipe for high pressure 700V's, and its threshold voltage is about -3V, and two other metal-oxide-semiconductor MH1, MH2 is resistance to
Pressure is also in 20V or so.
6. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：The high-tension current
In source circuit, resistance and diode in circuit provide suitable biasing and circuit protection for high-voltage current source.
7. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：It is described to trim pattern
In switching circuit, PTRIM-SET2 comes from UV comparison modules described previously, and PAUTO-S13 signals are the count status of counter
S13 output signal.
8. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：The line voltage
Latch in over-voltage detection circuit, PINV is outer lines voltage sense pin, and Ibiasl and Ibias2 and Vbiasl is respectively logical
Cross bias current biasing appropriate caused by chip reference circuit and mirror and voltage.
9. a kind of high performance switch power supply chip according to claim 1 trims circuit, it is characterized in that：It is described to latch sluggishness
In overvoltage circuit, PTRIM-SET3 signals are responsible for a pre- signal of interest for trimming pattern from module is restarted automatically.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610456465.7A CN107528576A (en) | 2016-06-22 | 2016-06-22 | A kind of high performance switch power supply chip trims circuit |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN201610456465.7A CN107528576A (en) | 2016-06-22 | 2016-06-22 | A kind of high performance switch power supply chip trims circuit |
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| CN107528576A true CN107528576A (en) | 2017-12-29 |
Family
ID=60735429
Family Applications (1)
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| CN201610456465.7A Pending CN107528576A (en) | 2016-06-22 | 2016-06-22 | A kind of high performance switch power supply chip trims circuit |
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| CN108681359A (en) * | 2018-05-22 | 2018-10-19 | 电子科技大学 | A kind of band-gap reference voltage circuit of high-precision and low-offset |
| CN108736875A (en) * | 2018-05-22 | 2018-11-02 | 电子科技大学 | One kind trimming code value generation circuit |
| CN108733128A (en) * | 2018-05-22 | 2018-11-02 | 电子科技大学 | A kind of super low-power consumption trims code value generation circuit |
| CN110168894A (en) * | 2017-08-16 | 2019-08-23 | 华为技术有限公司 | A kind of regulating circuit |
| CN112702055A (en) * | 2021-03-23 | 2021-04-23 | 泉芯电子技术(深圳)有限公司 | Chip peripheral anti-fuse pre-trimming circuit and trimming method thereof |
| CN112953499A (en) * | 2021-05-14 | 2021-06-11 | 上海芯龙半导体技术股份有限公司南京分公司 | Built-in coding circuit for communication chip and communication chip |
| CN112986796A (en) * | 2021-02-07 | 2021-06-18 | 昂宝电子（上海）有限公司 | Parameter trimming device and method for chip |
| CN113378499A (en) * | 2021-06-23 | 2021-09-10 | 无锡盛景微电子股份有限公司 | Fuse trimming circuit and equipment |
| CN114256812A (en) * | 2022-02-08 | 2022-03-29 | 深圳市创芯微微电子有限公司 | Battery protection circuit and trimming circuit |
| CN115373462A (en) * | 2022-10-25 | 2022-11-22 | 深圳利普芯微电子有限公司 | Chip trimming detection circuit, chip and electronic equipment |
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| CN110168894A (en) * | 2017-08-16 | 2019-08-23 | 华为技术有限公司 | A kind of regulating circuit |
| CN110168894B (en) * | 2017-08-16 | 2020-07-28 | 华为技术有限公司 | Voltage regulating circuit |
| US10984839B2 (en) | 2017-08-16 | 2021-04-20 | Huawei Technologies Co., Ltd. | Voltage regulation circuit |
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| CN108736875A (en) * | 2018-05-22 | 2018-11-02 | 电子科技大学 | One kind trimming code value generation circuit |
| CN108733128A (en) * | 2018-05-22 | 2018-11-02 | 电子科技大学 | A kind of super low-power consumption trims code value generation circuit |
| CN108733128B (en) * | 2018-05-22 | 2020-02-18 | 电子科技大学 | Trimming code value generating circuit with ultra-low power consumption |
| CN108681359B (en) * | 2018-05-22 | 2020-02-18 | 电子科技大学 | High-precision low-offset band-gap reference voltage circuit |
| CN108681359A (en) * | 2018-05-22 | 2018-10-19 | 电子科技大学 | A kind of band-gap reference voltage circuit of high-precision and low-offset |
| CN112986796A (en) * | 2021-02-07 | 2021-06-18 | 昂宝电子（上海）有限公司 | Parameter trimming device and method for chip |
| CN112702055A (en) * | 2021-03-23 | 2021-04-23 | 泉芯电子技术(深圳)有限公司 | Chip peripheral anti-fuse pre-trimming circuit and trimming method thereof |
| CN112702055B (en) * | 2021-03-23 | 2021-06-15 | 泉芯电子技术(深圳)有限公司 | Chip peripheral anti-fuse pre-trimming circuit and trimming method thereof |
| CN112953499A (en) * | 2021-05-14 | 2021-06-11 | 上海芯龙半导体技术股份有限公司南京分公司 | Built-in coding circuit for communication chip and communication chip |
| CN113378499A (en) * | 2021-06-23 | 2021-09-10 | 无锡盛景微电子股份有限公司 | Fuse trimming circuit and equipment |
| CN113378499B (en) * | 2021-06-23 | 2022-04-19 | 无锡盛景微电子股份有限公司 | Fuse trimming circuit and equipment applied to integrated circuit |
| CN114256812A (en) * | 2022-02-08 | 2022-03-29 | 深圳市创芯微微电子有限公司 | Battery protection circuit and trimming circuit |
| CN115373462A (en) * | 2022-10-25 | 2022-11-22 | 深圳利普芯微电子有限公司 | Chip trimming detection circuit, chip and electronic equipment |
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Application publication date: 20171229 |