CN109390231B - 一种沟槽式肖特基正面银表面金属结构的制造方法 - Google Patents

一种沟槽式肖特基正面银表面金属结构的制造方法 Download PDF

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CN109390231B
CN109390231B CN201710669358.7A CN201710669358A CN109390231B CN 109390231 B CN109390231 B CN 109390231B CN 201710669358 A CN201710669358 A CN 201710669358A CN 109390231 B CN109390231 B CN 109390231B
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metal layer
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刘晓芳
王彦君
孙晨光
徐长坡
王万礼
张新玲
刘丽媛
董子旭
杜宏强
刘闯
张晋英
刘文彬
乔智
印小松
张娇
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TCL Huanxin Semiconductor (Tianjin) Co.,Ltd.
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Abstract

本发明公开了一种沟槽式肖特基正面银表面金属结构的制造方法,该方法包括如下步骤:a.在硅片上形成势垒金属层,形成硅片‑势垒金属结构;b.对硅片‑势垒金属结构进行第一次热处理;c.在势垒金属层上形成第一金属层,形成硅片‑势垒金属‑第一金属层结构;d.对硅片‑势垒金属‑第一金属层结构进行第二次热处理;e.在第一金属层上淀积第二金属层。本发明采用合适的金属薄膜厚度和合金条件,采用在钛镍银前进行金属合金,可避免产品的表观异常;采用两次光刻和两次腐蚀多层金属薄膜的方法,可使金属腐蚀形貌稳定,利于产品可靠性的提高;此工艺与现有的常规工艺兼容,无需专用的设备和引入新的光刻胶。

Description

一种沟槽式肖特基正面银表面金属结构的制造方法
技术领域
本发明涉及正面银表面金属工艺,尤其涉及一种沟槽式肖特基正面银表面金属结构的制造方法。
背景技术
肖特基势垒二极管作为整流器件已经在电源应用领域使用了数十年。相对于PN结二极管而言,肖特基势垒二极管具有正向开启电压低和开关速度快的优点,这使其非常适合应用于开关电源以及高频场合。
肖特基势垒二极管是利用金属与半导体接触形成的金属-半导体结原理制造的。沟槽式肖特基,采用沟槽结构产生耗尽层夹断导电通道的原理,其高频特性和电性性能明显优于平面肖特基。当前主要采用以下方法制造沟槽式肖特基正面银表面金属结构:第一种,利用lift off工艺,进行三次光刻,再在其光刻胶的表面进行蒸发或溅射金属,采用贴膜揭膜的方法将光刻胶上的金属剥离,其工艺成本高,需要专用的光刻胶,兼有揭膜剥离金属时易出现金属残留等问题;第二种,在金属表面,进行一次光刻,然后刻蚀其金属,其刻蚀的形貌不稳定,易出现过刻蚀和金属残留的现象。
在沟槽式肖特基正面银表面金属结构的实际制造中出现以下问题:1、因沟槽的存在,以及各金属薄膜间的应力作用,圆片翘曲度过大,加工难度大;2、复合金属膜腐蚀难度大,易出现过刻蚀和金属残留的现象,且腐蚀形貌如图1所示易出现倒三角现象,直接影响金属薄膜间的粘附性及产品可靠性。
发明内容
为解决上述技术问题,本发明提供一种沟槽式肖特基正面银表面金属结构的制造方法。
本发明提供了一种沟槽式肖特基正面银表面金属结构的制造方法,包括如下步骤:a.在硅片上形成势垒金属层,形成硅片-势垒金属结构;b.对所述硅片-势垒金属结构进行第一次热处理;c.在所述势垒金属层上形成覆盖所述势垒金属层的第一金属层,形成硅片-势垒金属-第一金属层结构;d.对所述硅片-势垒金属-第一金属层结构进行第二次热处理;e.在所述第一金属层上淀积第二金属层,形成硅片-势垒金属-第一金属层-第二金属层结构。
以上技术方案,优选的,所述势垒金属层为钛金属,所述第一金属层为铝、铝硅合金、铝硅铜合金中的任一种或任意组合,所述第二金属层由下至上依次为钛镍银金属。
以上技术方案,优选的,所述势垒金属层厚度为
Figure GDA0003234594950000021
所述第一金属层厚度为
Figure GDA0003234594950000022
所述钛镍银金属厚度分别为
Figure GDA0003234594950000023
Figure GDA0003234594950000024
以上技术方案,优选的,所述第一次热处理为退火处理,处理温度为650~850℃,处理时间为5~15min,所述第二次热处理为退火处理,处理温度为300~600℃,处理时间为0.5~2h。
以上技术方案,优选的,在所述步骤a、b中,分别采用蒸发或溅射的方式形成所述势垒金属层和所述第一金属层。
以上技术方案,优选的,步骤a之前还包括步骤:用清洗液对所述硅片进行势垒前的清洗,清洗时间为5~30分钟。
以上技术方案,优选的,所述清洗液为HF:H2O体积比为5:1~20:1。
本发明具有的优点和积极效果是:本发明采用合适的金属薄膜厚度和合金条件,优化薄膜间应力,使产品的翘曲度得到改善,降低沟槽带来的加工工艺不稳定的问题,并且可避免银金属经高温后出现的外观异常;采用在钛镍银前进行金属合金,可避免产品的表观异常;同时,此工艺与现有的常规工艺兼容,无需专用的设备和引入新的光刻胶,有效降低制造成本。
附图说明
图1表示显微镜下观察到的现有工艺下的腐蚀形貌图;
图2表示本发明一实施方式的第一次去胶后结构示意图;
图3表示本发明一实施方式的第二次光刻后结构示意图;
图4表示本发明一实施方式的第二次去胶后结构示意图;
图5表示显微镜下观察到的本发明方法下的腐蚀形貌图。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白,下面结合附图对本发明的实施方式做出具体说明。
本发明的沟槽式肖特基正面银表面金属结构的制造方法包括如下步骤:a.在硅片1上形成势垒金属层2,形成硅片-势垒金属结构;b.对硅片-势垒金属结构进行第一次热处理;c.在势垒金属层上形成覆盖势垒金属层的第一金属层3,形成硅片-势垒金属-第一金属层结构;d.对硅片-势垒金属-第一金属层结构进行第二次热处理;e.在第一金属层上淀积第二金属层4,形成硅片-势垒金属-第一金属层-第二金属层结构。
优选的,步骤e之后还包括步骤:在肖特基器件即硅片-势垒金属-第一金属层-第二金属层结构的表面金属层上进行第一次光刻;第一次刻蚀金属;去胶;第二次光刻;第二次刻蚀金属;去胶。采用的势垒金属是钛,采用的第一金属层金属是铝、铝硅合金、铝硅铜合金中的任一种或任意组合,第二金属层金属由下至上依次为钛镍银。第一次刻蚀金属为湿法腐蚀镍银金属,第二次刻蚀金属为干法或湿法刻蚀势垒金属、第一金属层金属以及钛金属。势垒金属层厚度为
Figure GDA0003234594950000031
第一金属层厚度为
Figure GDA0003234594950000032
钛镍银金属厚度分别为
Figure GDA0003234594950000033
采用蒸发或溅射的方式分别形成势垒金属层和第一金属层,淀积钛镍银金属层。
第一次热处理为退火处理,处理温度为650~850℃,处理时间为5~15min,第二次热处理为退火处理,处理温度为300~600℃,处理时间为0.5~2h。
优选的,步骤a之前还包括步骤:用清洗液对硅片进行势垒前的清洗,清洗时间为5~30分钟,清洗液为HF:H2O体积比为5:1~20:1。
实施例
首先对待做势垒的沟槽式肖特基产品片进行势垒前的清洗:用HF:H2O体积比为20:1的清洗液清洗硅片,清洗时间为20分钟,由此,可以将硅片表面清洁干净,不会对后续步骤产生影响,使所得的势垒结构参数稳定;
蒸发Ti势垒厚度为
Figure GDA0003234594950000041
形成硅片-Ti势垒结构,该厚度的Ti金属层金属稳定,势垒不容易有缺陷;然后进行快速热退火,退火温度650~850℃,退火时间为5~15min,此次快速热退火是对势垒金属的合金,从而形成肖特基势垒,同时应力释放;
然后蒸发铝金属厚度为
Figure GDA0003234594950000042
形成硅片-Ti势垒–铝金属层结构,接着进行退火,退火温度300~600℃,退火时间为0.5~2h;再淀积钛镍银TiNiAg厚度分别为
Figure GDA0003234594950000043
形成硅片-Ti势垒–铝金属层-TiNiAg金属层结构,采用本范围的金属薄膜厚度和热处理条件,可使圆片翘曲度符合加工要求,降低沟槽带来的加工工艺不稳定的问题,并且可避免银金属经高温后出现的外观异常,在淀积钛镍银前进行热处理合金,可确保正面银金属的表观良好;
然后进行第一次光刻:涂胶、曝光、显影,再利用湿法腐蚀镍银金属:用镍银腐蚀液腐蚀镍银金属,然后去胶,结果如图2,采用与常规工艺兼容的设计,先进行一次光刻,湿法刻蚀NiAg,两层金属的湿法腐蚀相对可控;
然后第二次光刻:涂胶、曝光、显影,结果如图3,再腐蚀剩下的TiAlTi(钛势垒、铝金属以及钛金属),最后进行去胶,结果如图4。去胶后再进行二次光刻,使其光刻胶保护已腐蚀的NiAg,再刻蚀TiAlTi,可确保正金的腐蚀形貌是稳定的正三角结构,如图5所示,此结构有利于提高耐压、降低漏电以及使产品的可靠性得到改善。由上述方法制得的势垒正向导通压降在VF=0.42V,整片良率达到93%。
本发明采用合适的金属薄膜厚度和合金条件,优化薄膜间应力,使产品的翘曲度得到改善,降低沟槽带来的加工工艺不稳定的问题,并且可避免银金属经高温后出现的外观异常;采用在钛镍银前进行金属合金,可避免产品的表观异常;采用两次光刻和两次腐蚀多层金属薄膜的方法,可使金属腐蚀形貌稳定,在金属表层受到拉力时,不易出现翘边和脱落现象,利于产品可靠性的提高;同时,此工艺与现有的常规工艺兼容,无需专用的设备和引入新的光刻胶,有效降低制造成本。
以上对本发明的一实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。

Claims (5)

1.一种沟槽式肖特基正面银表面金属结构的制造方法,其特征在于,包括如下步骤:
a.在硅片上形成势垒金属层,形成硅片-势垒金属结构;
b.对所述硅片-势垒金属结构进行第一次热处理,所述第一次热处理为退火处理,处理温度为650~850℃,处理时间为5~15min;
c.在所述势垒金属层上形成第一金属层,形成硅片-势垒金属-第一金属层结构;
d.对所述硅片-势垒金属-第一金属层结构进行第二次热处理,所述第二次热处理为退火处理,处理温度为300~600℃,处理时间为0.5~2h;
e.在所述第一金属层上淀积第二金属层,形成硅片-势垒金属-第一金属层-第二金属层结构;
在肖特基器件即硅片-势垒金属-第一金属层-第二金属层结构的表面金属层上进行第一次光刻;第一次刻蚀金属;去胶;第二次光刻;第二次刻蚀金属;去胶;
所述势垒金属层为钛金属,所述第一金属层为铝、铝硅合金、铝硅铜合金中的任一种或任意组合,所述第二金属层由下至上依次为钛镍银金属;
第一次光刻:涂胶、曝光、显影,再利用湿法腐蚀镍银金属:用镍银腐蚀液腐蚀镍银金属,然后去胶,两层金属的湿法腐蚀相对可控;
第二次光刻:涂胶、曝光、显影,再腐蚀剩下的钛势垒、铝金属以及钛金属,最后进行去胶,进行第二次光刻时,使得第二次光刻时涂的光刻胶保护已腐蚀的镍银金属,再刻蚀钛势垒、铝金属以及钛金属。
2.根据权利要求1所述的沟槽式肖特基正面银表面金属结构的制造方法,其特征在于:所述势垒金属层厚度为
Figure FDA0003199739120000011
所述第一金属层厚度为
Figure FDA0003199739120000012
所述钛镍银金属厚度分别为
Figure FDA0003199739120000013
3.根据权利要求1或2所述的沟槽式肖特基正面银表面金属结构的制造方法,其特征在于:在所述步骤a、b中,分别采用蒸发或溅射的方式形成所述势垒金属层和所述第一金属层。
4.根据权利要求1所述的沟槽式肖特基正面银表面金属结构的制造方法,其特征在于:步骤a之前还包括步骤:用清洗液对所述硅片进行势垒前的清洗,清洗时间为5~30分钟。
5.根据权利要求4所述的沟槽式肖特基正面银表面金属结构的制造方法,其特征在于:所述清洗液为HF:H2O体积比为5:1~20:1。
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