CN103681277B - 一种多层金属图形化工艺中的湿法腐蚀方法 - Google Patents
一种多层金属图形化工艺中的湿法腐蚀方法 Download PDFInfo
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- CN103681277B CN103681277B CN201210352843.9A CN201210352843A CN103681277B CN 103681277 B CN103681277 B CN 103681277B CN 201210352843 A CN201210352843 A CN 201210352843A CN 103681277 B CN103681277 B CN 103681277B
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 238000000059 patterning Methods 0.000 title claims abstract description 23
- 238000001039 wet etching Methods 0.000 title claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims abstract description 48
- 238000005260 corrosion Methods 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims abstract description 34
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 18
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229960000583 acetic acid Drugs 0.000 claims abstract description 11
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 11
- 239000010936 titanium Substances 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 230000001502 supplementing effect Effects 0.000 claims description 3
- 239000003814 drug Substances 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052718 tin Inorganic materials 0.000 abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 238000005493 welding type Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000500881 Lepisma Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
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CN201210352843.9A CN103681277B (zh) | 2012-09-20 | 2012-09-20 | 一种多层金属图形化工艺中的湿法腐蚀方法 |
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CN201210352843.9A CN103681277B (zh) | 2012-09-20 | 2012-09-20 | 一种多层金属图形化工艺中的湿法腐蚀方法 |
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CN103681277A CN103681277A (zh) | 2014-03-26 |
CN103681277B true CN103681277B (zh) | 2016-08-03 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109390231A (zh) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | 一种沟槽式肖特基正面银表面金属结构的制造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104701387A (zh) * | 2015-02-13 | 2015-06-10 | 天津中环半导体股份有限公司 | 一种提高温度循环能力的肖特基器件金属结构及制造工艺 |
CN105355727A (zh) * | 2015-10-22 | 2016-02-24 | 山东浪潮华光光电子股份有限公司 | 一种GaAs基发光二极管芯片的制备方法 |
CN105895537B (zh) * | 2016-04-07 | 2018-11-27 | 上海华虹宏力半导体制造有限公司 | 金属工艺的返工方法 |
CN106629581B (zh) * | 2016-12-23 | 2021-04-23 | 江苏鲁汶仪器有限公司 | 全湿法腐蚀形成器件结构的方法 |
CN106876296A (zh) * | 2017-01-03 | 2017-06-20 | 航天科工防御技术研究试验中心 | 一种半导体器件失效定位方法 |
CN109390230B (zh) * | 2017-08-08 | 2021-07-16 | 天津环鑫科技发展有限公司 | 一种沟槽式肖特基正面银表面金属结构的制造方法 |
CN109979992A (zh) * | 2017-12-27 | 2019-07-05 | 无锡华润微电子有限公司 | 势垒金属结构及势垒金属结构的制造方法 |
CN108417497B (zh) * | 2018-02-07 | 2019-11-15 | 信利(惠州)智能显示有限公司 | 一种ltps背板布线的刻蚀工艺 |
CN112259455B (zh) * | 2020-10-19 | 2024-01-26 | 扬州扬杰电子科技股份有限公司 | 一种改善带钝化层结构的Ag面产品金属残留的方法 |
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CN102097288A (zh) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | 一种背面金属工艺的返工方法 |
CN102142465A (zh) * | 2010-12-20 | 2011-08-03 | 杭州士兰集成电路有限公司 | 一种肖特基二极管的正面电极结构及其工艺制造方法 |
WO2012121136A1 (ja) * | 2011-03-09 | 2012-09-13 | シャープ株式会社 | ウェットエッチング方法、配線パターンの形成方法、及びアクティブマトリクス基板の製造方法 |
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CN109390231A (zh) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | 一种沟槽式肖特基正面银表面金属结构的制造方法 |
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Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: CSMC TECHNOLOGIES FAB2 Co.,Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: CSMC TECHNOLOGIES FAB1 Co.,Ltd. |
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Effective date of registration: 20171130 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: CSMC TECHNOLOGIES FAB2 Co.,Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Patentee before: CSMC TECHNOLOGIES FAB1 Co.,Ltd. |