CN101740428B - 用于铜丝键合的金属压焊块厚铝工艺 - Google Patents

用于铜丝键合的金属压焊块厚铝工艺 Download PDF

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CN101740428B
CN101740428B CN2009102649701A CN200910264970A CN101740428B CN 101740428 B CN101740428 B CN 101740428B CN 2009102649701 A CN2009102649701 A CN 2009102649701A CN 200910264970 A CN200910264970 A CN 200910264970A CN 101740428 B CN101740428 B CN 101740428B
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戴昌梅
李俊
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Wuxi Zhongwei Microchips Co., Ltd.
CETC 58 Research Institute
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Abstract

本发明涉及一种集成电路的生产方法，具体地说是一种用于铜丝键合的金属压焊块厚铝工艺，本发明可以解决芯片键合工艺中铜丝键合要求的压焊块区域厚金属的问题。本发明通过在钝化层上溅射一层厚度为2μm的第二铝层，使第一铝层与第二铝层作为金属焊块部分的整体厚度为3μm，达到铜丝焊压技术的要求。本发明节约成本，便于实现焊接技术的自动化，可以减缓金属化合物的生成，提高键合强度，保证了小尺寸芯片的电路特性，工艺简单，操作方便。

Description

用于铜丝键合的金属压焊块厚铝工艺
技术领域
本发明涉及一种本发明涉及集成电路的生产方法，具体地说是一种用于铜丝键合的金属压焊块厚铝工艺，本发明可以解决芯片键合工艺中铜丝键合要求的压焊块区域厚金属的问题。
背景技术
芯片制备完成后需要进行组装，组装包括芯片的装配和器件的封装两部分。前者是将制备合格的芯片装配到底座上，使芯片与底座间形成良好的欧姆接触和散热通路，然后在电路各焊块上焊接金属引线，并同相应电极的外引线连接(该过程称键合)；后者是采用塑料或陶瓷封装形式把管芯包封起来。经过以上加工器件才能在各种环境和工作条件下稳定可靠的工作。
从上所述，芯片如果要组装，必需在芯片上制作金属化焊块。在CMOS芯片制造技术中，芯片各焊块的制作工艺流程如图A-1～A-6所示：
(1)第一步、在芯片的场区上用溅射一层1μm厚度的铝层4(为防止电迁移，铝层4上含少量的硅和铜)，如图A-1所示；
(2)第二步、在铝层4上涂第一光刻胶层5，铝层4上对应于涂有第一光刻胶层5处形成金属刻蚀窗口，保留金属刻蚀窗口上的第一光刻胶层5，如图A-2所示；
(3)第三步、对金属刻蚀窗口进行干法刻蚀，将金属刻蚀窗口处的铝层4保留下来，其余地方的铝层4刻蚀掉，如图A-3所示；
(4)第四步、去除铝层4上的光刻胶5，采用PECVD淀积(等离子体化学气相淀积)，在铝层4上形成SiO2层6和SiN层7(这两层是钝化层，保护电路不受潮湿、盐、雾等恶劣环境的影响)，如图A-4所示；
(5)第五步、在SiN层7上涂第二光刻胶层8，并在对应于铝层4的上部留出没有涂第二光刻胶层8的区域，对该区域进行光刻形成钝化层刻蚀窗口，如图A-5所示；
(6)第六步、对钝化窗口进行干法刻蚀，刻蚀掉SiN层7、SiO2层6，使铝层4作为金属焊块的部分曝露出来，为以后的键合使用，如图A-6所示。
随着芯片制造工艺水平的提高，芯片的成品率已相当高。它在总成本中所占的比重已相对下降，某些产品的组装成本已超过芯片制造成本，因而降低组装的成本已成为降低总成本的关键因素。
铜丝球焊接技术是目前国际上正在进行开发研究的一种用于微电子器件芯片与内引线连接的新技术。与现行的金丝球焊接技术相比，不仅可以节约黄金降低成本，便于焊接技术过程的自动化，而且可以减缓金属化合物的生成，提高键合强度，因而在今后的微电子封装发展中铜丝焊接将会成为主流技术。
因为铜的强度和屈服度等物理参数高于金和铝，键合时需要施加更大的键合压力，一般对铝层焊块的厚度要求比较高一点，一般的铜丝键合需要铝层厚度最好为3μm以上，越粗的铜丝对铝层的厚度要求越大。
针对铜丝键合，上述芯片焊块的制造方法存在明显缺点：1μm的铝层厚度太薄，铜丝焊接容易把铝层打穿，造成弹坑，导致产品的电性能及可靠性问题而失效，而如果直接溅射一层3μm的铝层，在铝腐蚀工艺时存在胶厚度不够及条宽控制不好等问题，将影响小尺寸芯片的电性能。
发明内容
本发明的目的是克服现有技术中存在的不足，提供一种用于铜丝键合的金属压焊块厚铝工艺，其工艺简单、操作方便、能够满足铜丝键合的要求。
按照本发明提供的技术方案，一种用于铜丝键合的金属压焊块厚铝工艺，包括衬底硅、位于衬底硅上的场氧化层及位于场氧化层上的BPSG层(BPSG层是含硼、磷的二氧化硅，作为场氧化层和第一铝层之间的绝缘层)；所述工艺包括如下步骤：
步骤一、在BPSG层上溅射厚度为0.9～1.1μm的第一铝层，所述溅射的温度为158～193℃；
步骤二、在第一铝层的表面涂光刻胶，保留第一铝层上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第一铝层与第一铝层上的第一光刻胶层形成第一焊块金属刻蚀窗口；
步骤三、对第一焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第一焊块金属刻蚀窗口外的第一铝层，所述等离子体的混合气体主要成分是流量为23～27sccm的Cl2，41～49sccm的BCl3；
步骤四、去除第一焊块金属刻蚀窗口上的第一光刻胶层，在第一铝层上利用等离子体化学气相淀积形成SiO2层，在SiO2层上利用等离子体化学气相淀积形成SiN层；
步骤五、在SiN层上涂光刻胶，在SiN层上形成第二光刻胶层，并去除SiN层对应于第一铝层上部的光刻胶，所述SiN层的表面对应于没有光刻胶的区域形成钝化孔刻蚀窗口；
步骤六、对所述钝化孔刻蚀窗口进行等离子干法刻蚀，刻蚀掉第一铝层上对应的SiN层及SiO2层，露出第一铝层，所述等离子体的混合气体主要成分是流量为38～46sccm的CHF3，18～22sccm的NF3；
步骤七、去除SiN层上的第二光刻胶层，并在SiN层上溅射一层厚度为1.8～2.2μm的第二铝层，所述溅射的温度为158～193℃；
步骤八、在第二铝层的表面涂光刻胶，第二铝层的表面保留第一铝层上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第二铝层与第二铝层上的第三光刻胶层形成第二焊块金属刻蚀窗口；
步骤九、对第二焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第二焊块金属刻蚀窗口外的第二铝层，并去除第三光刻胶层；所述等离子体的混合气体主要成分是流量为23～27sccm的Cl2，41～49sccm的BCl3。
所述衬底硅的厚度为553～687μm。所述场氧化层的厚度为0.36～0.44μm。所述SiO2层的厚度为
Figure GSB00000512651100021
所述SiN层的厚度为
Figure GSB00000512651100022
所述第一光刻胶层、第二光刻胶层及第三光刻胶层的厚度均为所述BPSG层的厚度为0.72～0.88μm。
本发明的优点：克服常规工艺铝层薄带来的铜丝键合弹坑问题；到达了小尺寸芯片的铜丝键合技术要求；工艺简单，具有很强的操作性。
附图说明
图A-1是传统的BPSG层表面溅射铝层的结构示意图。
图A-2是传统的铝层的表面进行光刻后的结构示意图。
图A-3是传统的对铝层进行干法刻蚀后的结构示意图。
图A-4是传统的在铝层表面形成钝化层的结构示意图。
图A-5是传统的对钝化层进行光刻形成钝化窗口的结构示意图。
图A-6是传统的对钝化窗口进行干法腐蚀使铝层曝露的结构示意图。
图B-1～图B-9是本发明用于铜丝键合的金属焊块厚铝的示意图，其中：
图B-1是在BPSG上第一次溅射焊块金属铝层的结构示意图。
图B-2是第一次对焊块金属铝层进行光刻后的结构示意图。
图B-3是第一次对焊块金属铝层干法刻蚀后的结构示意图。
图B-4是在焊块金属铝层淀积SiO2/SiN钝化层的结构示意图。
图B-5是钝化层上形成钝化孔刻蚀窗口的结构示意图。
图B-6是钝化孔刻蚀窗口干法刻蚀后的结构示意图。
图B-7是在钝化层上第二次溅射焊块金属铝层的结构示意图。
图B-8是对第二次溅射焊块金属铝层进行光刻后的结构示意图。
图B-9是对第二次溅射焊块金属铝层干法刻蚀后的结构示意图。
具体实施方式
下面结合具体附图和实施例对本发明作进一步说明。
图A-1～图A-6中所标识数字区域说明：1、衬底硅，厚度约为625um；2、场氧化层，厚度为0.4μm；3、BPSG层，厚度为0.8μm；4、工艺中溅射形成的铝层，厚度约1um；5、光刻胶，厚度约为
Figure GSB00000512651100032
所述用于铜丝键合的金属压焊块厚铝工艺，包括衬底硅1、位于衬底硅1上的场氧化层2及位于场氧化层2上的BPSG层3，所述BPSG层作为绝缘层；所述工艺包括如下步骤：
步骤一、在BPSG层3上溅射厚度为1μm的第一铝层4；为防止电迁移，所述第一铝层4上含少量的硅和铜，所述溅射的温度为175℃，如图B-1所示；
步骤二、在第一铝层4的表面涂光刻胶，保留第一铝层4上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第一铝层4与第一铝层4上的第一光刻胶层5形成第一焊块金属刻蚀窗口，所述第一光刻胶层5的厚度为
Figure GSB00000512651100033
如图B-2所示；
步骤三、对第一焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第一焊块金属刻蚀窗口外的第一铝层4，所述等离子体的混合气体主要成分是流量为25的Cl2，45sccm的BCl3，如图B-3所示；
步骤四、去除第一焊块金属刻蚀窗口上的第一光刻胶层5，在第一铝层4上利用等离子体化学气相淀积形成SiO2层6，在SiO2层6上利用等离子体化学气相淀积形成SiN层7，所述SiO2层6与SiN层7形成钝化层，用于保护电路不受潮湿、盐、雾灯恶劣环境的影响，所述SiO2层的厚度为为
Figure GSB00000512651100041
所述SiN层7的厚度为
Figure GSB00000512651100042
如图B-4所示；
步骤五、在SiN层7上涂光刻胶，在SiN层7上形成第二光刻胶层8，所述第二光刻胶层8的厚度为
Figure GSB00000512651100043
并去除SiN层7对应于第一铝层4上部的光刻胶，所述SiN层7的表面对应于没有光刻胶的区域形成钝化孔刻蚀窗口，如图B-5所示；
步骤六、对所述钝化孔刻蚀窗口进行等离子干法刻蚀，刻蚀掉第一铝层4上对应的SiN层7及SiO2层6，露出第一铝层4，所述等离子体的混合气体主要成分是流量为42sccm的CHF3，20sccm的NF3，如图B-6所示；
步骤七、去除SiN层7上的第二光刻胶层8，并在SiN层7上溅射一层厚度为2μm的第二铝层9，所述溅射的温度为175℃，如图B-7所示；
步骤八、在第二铝层9的表面涂光刻胶，第二铝层9的表面保留第一铝层4上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第二铝层9与第二铝层9上的第三光刻胶层10形成第二焊块金属刻蚀窗口，所述第三光刻胶10的厚度为
Figure GSB00000512651100044
如图B-8所示；
步骤九、对第二焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第二焊块金属刻蚀窗口外的第二铝层9，并去除第三光刻胶层10；所述等离子体的混合气体主要成分是流量为25sccm的Cl2，45sccm的BCl3，如图B-9所示。
通过在SiO2层6SiN层7形成钝化层上溅射一层厚度为2μm的第二铝层9，使第二铝层9与第一铝层4的整体厚度达到3μm，所述第一铝层4与第二铝层9共同作为焊块金属，达到铜丝焊压得要求，节省了芯片的装配成本，保证了小尺寸芯片的电路特性，工艺简单，操作方便。

Claims (7)

1.一种用于铜丝键合的金属压焊块厚铝工艺，包括衬底硅(1)、位于衬底硅(1)上的场氧化层(2)及位于场氧化层(2)上的BPSG层(3)，其特征是，所述工艺包括如下步骤：
步骤一、在BPSG层(3)上溅射厚度为0.9～1.1μm的第一铝层(4)，所述溅射的温度为158～193℃；
步骤二、在第一铝层(4)的表面涂光刻胶，保留第一铝层(4)上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第一铝层(4)与第一铝层(4)上的第一光刻胶层(5)形成第一焊块金属刻蚀窗口；
步骤三、对第一焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第一焊块金属刻蚀窗口外的第一铝层(4)，所述等离子体的混合气体主要成分是流量为23～27sccm的Cl2，41～49sccm的BCl3；
步骤四、去除第一焊块金属刻蚀窗口上的第一光刻胶层(5)，在第一铝层(4)上利用等离子体化学气相淀积形成SiO2层(6)，在SiO2层(6)上利用等离子体化学气相淀积形成SiN层(7)；
步骤五、在SiN层(7)上涂光刻胶，在SiN层(7)上形成第二光刻胶层(8)，并去除SiN层(7)对应于第一铝层(4)上部的光刻胶，所述SiN层(7)的表面对应于没有光刻胶的区域形成钝化孔刻蚀窗口；
步骤六、对所述钝化孔刻蚀窗口进行等离子干法刻蚀，刻蚀掉第一铝层(4)上对应的SiN层(7)及SiO2层(6)，露出第一铝层(4)，所述等离子体的混合气体主要成分是流量为38～46sccm的CHF3，18～22sccm的NF3；
步骤七、去除SiN层(7)上的第二光刻胶层(8)，并在SiN层(7)上溅射一层厚度为1.8～2.2μm的第二铝层(9)，所述溅射的温度为158～193℃；
步骤八、在第二铝层(9)的表面涂光刻胶，第二铝层(9)的表面保留第一铝层(4)上对应于金属连线和金属焊块区域的光刻胶，去除金属连线和金属焊块区域外的光刻胶，所述第二铝层(9)与第二铝层(9)上的第三光刻胶层(10)形成第二焊块金属刻蚀窗口；
步骤九、对第二焊块金属刻蚀窗口进行等离子体反应刻蚀，刻蚀掉第二焊块金属刻蚀窗口外的第二铝层(9)，并去除第三光刻胶层(10)；所述等离子体的混合气体主要成分是流量为23～27sccm的Cl2，41～49sccm的BCl3。
2.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述衬底硅(1)的厚度为553～687μm。
3.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述场氧化层(2)的厚度为0.36～0.44μm。
4.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述SiO2层(6)的厚度为
Figure FSB00000512651000011
5.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述SiN层(7)的厚度为
Figure FSB00000512651000021
6.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述第一光刻胶层(5)、第二光刻胶层(8)及第三光刻胶层(10)的厚度均为
Figure FSB00000512651000022
7.根据权利要求1所述的用于铜丝键合的金属压焊块厚铝工艺，其特征是：所述BPSG层(3)的厚度为0.72～0.88μm。
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