CN109321877A - Film formation mask and its manufacturing method - Google Patents
Film formation mask and its manufacturing method Download PDFInfo
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- CN109321877A CN109321877A CN201810619521.3A CN201810619521A CN109321877A CN 109321877 A CN109321877 A CN 109321877A CN 201810619521 A CN201810619521 A CN 201810619521A CN 109321877 A CN109321877 A CN 109321877A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1641—Organic substrates, e.g. resin, plastic
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
This application discloses a kind of film formation mask and its manufacturing methods, comprising: polymer membrane, the first face of plurality of patterns of openings perforation polymer membrane and the second face of polymer membrane；The shape of the patterns of openings of the first metal layer with multiple first through holes, the shape of the first through hole and position and polymer membrane and position match；The shape of the patterns of openings of second metal layer with multiple second through holes, the shape of the second through hole and position and polymer membrane and position match；Two preset metal layers are respectively arranged between polymer membrane and the first metal layer and are set between polymer membrane and second metal layer；First through hole and the second through hole penetrate through preset metal layer respectively.By being respectively formed the combined type film formation mask structure of metal layer on the opposite sides face of polymer membrane, so that film formation mask energy yield with higher in high-resolution manufacturing process, and still there is enough intensity in high opening rate state.
Description
Technical field
This application involves mask field more particularly to a kind of film formation mask and its manufacturing methods.
Background technique
Existing organic light emitting diode display has been increasingly towards resolution ratio development more higher than 1080P, such as differentiates
Rate 4K.However, high-resolution organic light emitting diode display is also that manufacturing process brings new challenge.Cooperate organic hair
The development of the high-resolution manufacturing process of optical diode display, also has higher requirement to the accuracy of film formation mask.
In existing organic light emitting display manufacturing process, required film formation mask uses high-precision metal mask plate more
(Fine Metal Mask, FMM), however when facing high-resolution demand, it is good that high-precision metal mask plate is encountered by manufacture
Rate is insufficient, percent opening is excessively high leads to strength reduction.These problems are also organic light emitting diode display towards high score
Resolution development causes to hinder.
Summary of the invention
The application provides a kind of film formation mask and its manufacturing method, good with the high-precision metal mask plate for solving the prior art
The problem of rate is insufficient and high opening rate reduces mask intensity.
In order to solve the above-mentioned technical problem, the application is achieved in that
In a first aspect, providing a kind of film formation mask, which includes:
Polymer membrane has the first face, the second face and multiple patterns of openings, wherein the first face is opposite with the second face
Setting, the first face of multiple patterns of openings perforation polymer membranes and the second face of polymer membrane；
The first metal layer is set on the first face, and the first metal layer has multiple first through holes, the shape of the first through hole
The shape of multiple patterns of openings of shape and position and polymer membrane and position match；
Second metal layer is set on the second face, and second metal layer has multiple second through holes, the shape of the second through hole
The shape of multiple patterns of openings of shape and position and polymer membrane and position match；
Two preset metal layers, are respectively arranged between polymer membrane and the first metal layer, and be set to polymer film
Between piece and second metal layer；Wherein, multiple first through holes and multiple second through holes penetrate through two preset metal layers respectively.
Second aspect provides a kind of manufacturing method of film formation mask, and this method comprises the following steps:
Preset metal layer is formed in the first face of polymer membrane and the second face by electroless plating technology, wherein polymer
First face of diaphragm and the second face of polymer membrane are oppositely arranged；
The first metal layer is formed on the preset metal layer in the first face of polymer membrane by electroplating technology, and poly-
Second metal layer is formed on the preset metal layer in the second face of compound film piece；
Predetermined position irradiation laser is formed and penetrates through multiple second through holes of preset metal layer and second metal layer, is passed through
The patterns of openings of logical polymer membrane and multiple first through holes of the preset metal layer of perforation and the first metal layer.
The third aspect provides the manufacturing method of another film formation mask, and this method comprises the following steps:
Preset metal layer is formed in the first face of polymer membrane and the second face by electroless plating technology, wherein polymer
First face of diaphragm and the second face of polymer membrane are oppositely arranged；
Photoetching is respectively coated on the preset metal layer in second face in the first face and polymer membrane of polymer membrane
Glue；
By photoetching offset plate figure；
The surface that preset metal layer by electroplating technology in the first face of polymer membrane is not covered by photoresist is formed
The first metal layer, and the surface that preset metal layer in the second face of polymer membrane is not covered by photoresist form the second gold medal
Belong to layer；
Photoresist is removed to form multiple first through holes in the first metal layer, and forms multiple the in second metal layer
Two through holes；
Laser is irradiated to the predetermined position of the polymer membrane in multiple first through holes and multiple second through holes, with
Form multiple patterns of openings of perforation polymer membrane.
In this application, the first metal layer being respectively formed on the opposite sides face of polymer membrane by film formation mask
And the composite structure of second metal layer, and by the manufacturing method of such film formation mask so that new combined type at
Film mask energy yield with higher in the high-resolution manufacturing process of Organic Light Emitting Diode, and in high opening rate state
Still there is enough intensity.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 (a) is the top view of the film formation mask of the application first embodiment.
Fig. 1 (b) is the film formation mask of the application first embodiment in the cross-sectional view of Fig. 1 (a) X-X ' line.
Fig. 2 is the partial enlarged view of the a-quadrant of the film formation mask of the application first embodiment.
Fig. 3 is the partial enlarged view of the B area of the film formation mask of the application first embodiment.
Fig. 4 (a) is the top view of the film formation mask of the application second embodiment.
Fig. 4 (b) is the film formation mask of the application second embodiment in the cross-sectional view of Fig. 4 (a) Y-Y ' line.
Fig. 5 is the partial enlarged view in the region C of the film formation mask of the application second embodiment.
Fig. 6 is the partial enlarged view in the region D of the film formation mask of the application second embodiment.
Fig. 7 is corresponding to the flow diagram of the manufacturing method of the film formation mask of the application first embodiment.
Fig. 8 is corresponding to the flow diagram of the manufacturing method of the film formation mask of the application second embodiment.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiment is some embodiments of the present application, instead of all the embodiments.Based on this Shen
Please in embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall in the protection scope of this application.
Fig. 1 (a) is the top view of the film formation mask of the application first embodiment, and Fig. 1 (b) is the application first embodiment
Film formation mask is in the cross-sectional view of Fig. 1 (a) X-X ' line, and as shown in Fig. 1 (a) and Fig. 1 (b), the film forming of the application first embodiment is covered
Mould includes: polymer membrane 10, the first metal layer 11, second metal layer 12, preset metal layer 13 and metal framework 14.Polymerization
Object diaphragm 10 has the first face 101, the second face 102 and a multiple patterns of openings 103, the first face 101 of polymer membrane 10 with
Second face 102 of polymer membrane 10 is to be oppositely arranged, and multiple patterns of openings 103 penetrate through the first face 101 of polymer membrane 10
With the second face 102 of polymer membrane 10.It is enough to pass through exposure work in the manufacturing step to form a film on the substrate of predetermined film forming
Skill and multiple patterns of openings 103 of film formation mask form Thinfilm pattern on the substrate of predetermined film forming.In the implementation of the application
In example, the material of polymer membrane 10 can be the polymer being made of high molecular material, such as Kapton
(Polyimide Film, abbreviation PI film) or resin film, but the material of polymer membrane 10 is not taken off with the present embodiment
The type of dew is limited.Substrate of first face 101 of polymer membrane 10 towards predetermined film forming, the second face of polymer membrane 10
102 towards evaporation source, and multiple patterns of openings 103 are the first faces 101 by polymer membrane 10 to the second of polymer membrane 10
The perforative hole in face 102 or boxed area.
The first metal layer 11 is set to the first face 101 of polymer membrane 10, and the first metal layer 11 has multiple first to pass through
The shape of the patterns of openings 103 of through-hole 110, the shape of the first through hole 110 and position and polymer membrane 10 and position
Match.The first metal layer 11 has the first side 111 and second side 112, the neighbouring polymerization in the first side 111 of the first metal layer 11
First face 101 of object diaphragm 10, second side 112 of the first metal layer 11 deviate from the first face 101 of polymer membrane 10.Second gold medal
Belong to the second face 102 that layer 12 is set to polymer membrane 10, second metal layer 12 has multiple second through holes 120, and second passes through
The shape of through-hole 120 and position are mutually matched with the shape of the patterns of openings 103 of polymer membrane 10 and position.Second gold medal
Belonging to layer 12 has third side 123 and the 4th side 124, the third side 123 of second metal layer 12 adjacent to polymer membrane 10 the
Two faces 102, the 4th side 124 of second metal layer 12 deviate from the second face 102 of polymer membrane 10.
In embodiments herein, the shape and position and polymer of the first through hole 110 or the second through hole 120
The shape of the patterns of openings 103 of diaphragm 10 and position match, and refer to the shape of the first through hole 110 or the second through hole 120
Shape and the shape of patterns of openings 103 are same or similar, for example, the shape of the first through hole 110 or the second through hole 120 is rectangular
Shape, the shape of aperture pattern are also rectangle.
In embodiments herein, the shape and position and polymer of the first through hole 110 or the second through hole 120
The shape of the patterns of openings 103 of diaphragm 10 and position, which are mutually matched, can refer to the first through hole 110 or the second through hole 120
The patterns of openings 103 of horizontal relative position and polymer membrane 10 on film formation mask horizontal relative position on film formation mask
It is identical, therefore the vertically opposite position of the first through hole 110, the second through hole 120 and patterns of openings 103 on film formation mask
It is overlapping.First through hole 110, the second through hole 120 and patterns of openings 103 form the hole or bulk area of a perforation
Domain, the hole or boxed area of this perforation connect opening for polymer membrane 10 by the first through hole 110 of the first metal layer 11
Mouth pattern 103, reconnects the second through hole 120 of second metal layer 12 and is formed.In embodiments herein, the first metal
Layer 11 and the material of second metal layer 12 can be dilval, and the thickness of the first metal layer 11 and second metal layer 12 can
To be between 2 microns (μm) to 100 microns (μm), it is also possible between 10 microns (μm) to 40 microns (μm) or 30 microns
(μm) is between 80 microns (μm) or between 50 microns (μm) to 90 microns (μm) or 20 microns (μm) to 70 microns (μ
M) between or between 5 microns (μm) to 60 microns (μm), but it is not limited with thickness disclosed by the present embodiment.?
In embodiments herein, the thickness by control the first metal layer 11 and second metal layer 12 is micro- at 2 microns (μm) to 100
Between rice (μm) so that film formation mask is when to be formed by laser technology the hole or blocky of perforation, the hole or
The first metal layer 11 and second metal layer 12 in blocky region can completely be removed by laser, and it is good to obtain preferable aperture
Rate.
Preset metal layer 13 is respectively arranged between polymer membrane 10 and the first metal layer 11, and is set to polymer
Between diaphragm 10 and second metal layer 12, multiple first through holes 110 and multiple second through holes 120 penetrate through preset gold respectively
Belong to layer 13.The key that preset metal layer 13 is used to strengthen the first metal layer 11 or second metal layer 12 is combined with polymer membrane 10
Knot.When multiple first through holes 110 are connect with multiple patterns of openings 103, multiple first through holes 110 penetrate through polymer film respectively
Preset metal layer 13 between piece 10 and the first metal layer 11.Multiple second through holes 120 are connect with multiple patterns of openings 103
When, multiple second through holes 120 penetrate through the preset metal layer 13 between polymer membrane 10 and second metal layer 12 respectively.At this
In the embodiment of application, the material of preset metal layer 13 can be nickel (Ni) metal, platinum (Pt) metal or palladium (Pd) metal, and
The thickness of preset metal layer 13 can be less than 100 nanometers (nm), be also possible to less than 50 nanometers (nm), or receive less than 500
Rice (nm), or be limited less than 1 micron (μm), but not with thickness disclosed by the present embodiment.In the implementation of the application
In example, by the thickness of the preset metal layer 13 of control less than 1 micron (μm), so that film formation mask is carrying out shape by laser technology
At perforation hole or blocky when, the preset metal layer 13 in hole or blocky region can completely be removed by laser, and
Obtain preferable aperture yield.
Fig. 2 is the partial enlarged view of the a-quadrant of the film formation mask of the application first embodiment, and first in the application is implemented
In example, film formation mask forms the second through hole 120, patterns of openings 103 and the first through hole in predetermined position by laser
110, laser predetermined position from second metal layer 12 inject film formation mask, by after polymer membrane 10 by the first metal layer 11
It projects.As shown in Fig. 2, opening area of first through hole 110 in the first side 111 of the first metal layer 11 is greater than the first metal layer
The opening area of 11 second side 112, opening area of second through hole 120 in the 4th side 124 of second metal layer 12 are greater than
The opening area of the third side 123 of second metal layer 12, the second through hole 120 are opened the third side 123 of second metal layer 12
Open area is greater than the opening area of the first side 111 of the first metal layer 11.Patterns of openings 103 is in the second face of polymer membrane 10
102 opening area is greater than the opening area in the first face 101 of polymer membrane 10.Therefore, swash the opening area of light inlet surface
Opening area compared to laser outgoing plane is big.In embodiments herein, when the film formation mask of the application is applied to steam
When depositing process, the 4th side 124 of second metal layer 12 is towards hot evaporation source, and second side 112 of the first metal layer 11 is towards predetermined
The substrate of film forming.In embodiments herein, laser forms the second through hole 120, patterns of openings 103 and the first through hole
110 yield will receive the thickness effect of the first metal layer 11 and second metal layer 12.When the first metal layer 11 or the second gold medal
When the thickness of category layer 12 is blocked up, the yield that laser forms through hole will decline.If the first metal layer 11 or second metal layer
When 12 thickness deficiency, the intensity of film formation mask can be made insufficient, so that the service life of film formation mask shortens.
Fig. 3 is the partial enlarged view of the B area of the film formation mask of the application first embodiment, as shown, metal framework
14 end face 141 is connected to second metal layer 12, and forms bonding pad 121 in second metal layer 12.In the first embodiment,
Polymer membrane 10 in bonding pad 121, that is to say, that there are second for the bonding pad 121 of the end face 141 of metal framework 14
Metal layer 12 is stacked with polymer membrane 10.In the first embodiment, an end face 141 of metal framework 14 by laser welding with
Second metal layer 12 connects.In addition, in bonding pad 121, there are two layers of sides of being stacked of second metal layer 12 and polymer membrane 10
Case can make metal framework 14 be relatively easy to connect with second metal layer 12, it is low to be suitably applied film formation mask aperture opening ratio
Scene.
Fig. 4 (a) is the top view of the film formation mask of the application second embodiment, and Fig. 4 (b) is the application second embodiment
Film formation mask is in the cross-sectional view of Fig. 4 (a) Y-Y ' line, and as shown in Fig. 4 (a) and Fig. 4 (b), the first through hole 110 has built-in multiple
At least one patterns of openings 103 in patterns of openings 103, the second through hole 120 have in built-in multiple patterns of openings 103
At least one opening pattern 103.That is, can have a patterns of openings in the first through hole 110 or the second through hole 120
103, there can also be multiple patterns of openings 103.When an only patterns of openings in the first through hole 110 or the second through hole 120
When 103, the shape of the first through hole 110 and position are similar to shape and the position of patterns of openings 103, the second through hole
120 shape and position are similar to shape and the position of patterns of openings 103.In a second embodiment, the first through hole 110
Or second through hole 120 be respectively provided with built-in multiple patterns of openings 103, such as two patterns of openings, then the first through hole 110
Shape and position are similar to two combined shapes of patterns of openings 103 and position, the shape of the second through hole 110 and position
It sets and is similar to two combined shapes of patterns of openings 103 and position.
Fig. 5 is the partial enlarged view in the region C of the film formation mask of the application second embodiment, and second in the application is implemented
In example, film formation mask forms patterns of openings in predetermined position by laser, and laser is in predetermined position from the of polymer membrane 10
Two faces 102 are injected, then are projected by the first face 101 of polymer membrane 10.As shown in figure 5, patterns of openings 103 is in polymer membrane
The opening area in 10 the second face 102 is greater than the opening area in the first face 101 of polymer membrane 10.Therefore, swash light inlet surface
Opening area compared to the opening area of laser outgoing plane be big.
Fig. 6 is the partial enlarged view in the region D of the film formation mask of the application second embodiment, as shown, metal framework
14 end face 141 is connected to second metal layer 12, and forms bonding pad 121 in second metal layer 12.In a second embodiment,
Polymer membrane 10 in bonding pad 121, that is to say, that there are second for the bonding pad 121 of the end face 141 of metal framework 14
Metal layer 12, polymer membrane 10 and the first metal layer 11 are stacked.In a second embodiment, an end face of metal framework 14
141 are connect by laser welding with second metal layer 12.In addition, in bonding pad 121, there are second metal layers 12, polymer film
Three layers of piece 10 and the first metal layer 11 are stacked scheme, and metal framework 14 can be made to be suitably applied film formation mask opening
Scene high, resolution is high.
It in the embodiment of the present application, include in the first metal layer on polymer membrane two sides and second by film formation mask
The combined type mask of metal layer, so that the film formation mask of new combined type still has enough intensity under high opening rate state.
In addition, being set between polymer membrane and the first metal layer by preset metal layer, and it is set to polymerization
Between object diaphragm and second metal layer, so that the first metal layer and second metal layer are able to be set to polymer membrane.
In addition, suitable metal layer thickness is electroplated by the first metal layer and second metal layer, so that film formation mask is logical
Laser is crossed to carry out obtaining preferable manufacturing yield when perforation aperture or fluting.
Fig. 7 is corresponding to the flow diagram of the manufacturing method of the film formation mask of the application first embodiment, as shown,
The manufacturing method of the application includes the following steps:
Step S101: forming preset metal layer in the first face of polymer membrane and the second face by electroless plating technology,
Wherein the first face of polymer membrane and the second face of polymer membrane are opposite.
In step s101, by electroless plating technology in polymer membrane, such as Kapton (Polyimide
Film, abbreviation PI film), form the sheet metal of nickel (Ni) metal, platinum (Pt) metal or palladium (Pd) metal, preset metal layer conduct
The first metal layer is provided and second metal layer depends on the basis of polymer membrane.In embodiments herein, preset metal
Less than 100 nanometers of the thickness (nm) of layer, is also possible to less than 50 nanometers (nm), or less than 300 nanometers (nm), or be less than
500 nanometers (nm), or less than 800 nanometers (nm), or less than 1 micron (μm), but not with thickness disclosed by the present embodiment
Degree size is limited.In embodiments herein, by the thickness of the preset metal layer of control less than 1 micron (μm), so that film forming
Mask is when to be formed by laser technology the hole or blocky of perforation, the preset gold in the hole or blocky region
Belonging to layer 13 can completely be removed by laser, and obtain preferable aperture yield.
Step S102: the first metal is formed on the preset metal layer in the first face of polymer membrane by electroplating technology
Layer, and second metal layer is formed on the preset metal layer in the second face of polymer membrane.
In step s 102, in electroplating technology, electroplate liquid include the first metal layer or second metal layer material sun from
Son, the positive electrode of power supply are electrically connected to plating metal source, and the negative electrode of power supply is electrically connected to preset metal layer, wherein to be plated
Source metal is made of the material of the first metal layer or second metal layer, in embodiments herein, the first metal layer and
The material of two metal layers can be dilval, but be not limited thereto.Plating metal source is partially or fully immersed in plating
In liquid, the polymer membrane for having formed preset metal layer is also immersed in electroplate liquid.In electroplating process, electricity is applied by power supply
Pressure, between plating metal source and preset metal layer under the action of electric field, the cation in solution is attracted to preset metal layer
Surface forms the first metal layer or second metal layer, thus on the preset layer on surface of metal for not being photo-etched glue pattern covering
It realizes and forms the first metal layer or second metal layer on preset metal layer by electroplating technology.In embodiments herein
In, the thickness of the first metal layer and second metal layer can be 2 microns (μm) to 100 microns (μm), be also possible to 10 microns
(μm) is between 40 microns (μm) or between 30 microns (μm) to 80 microns (μm) or 50 microns (μm) to 90 microns (μ
M) between or between 20 microns (μm) to 70 microns (μm) or between 5 microns (μm) to 60 microns (μm), but not with
Thickness disclosed by the present embodiment is limited.In embodiments herein, pass through control the first metal layer and the second gold medal
Belong to the thickness of layer between 2 microns (μm) to 100 microns (μm), so that film formation mask is carrying out forming perforation by laser technology
Hole or blocky when, the first metal layer and second metal layer in the hole or blocky region can be complete by laser
Removal, and obtain preferable aperture yield.
Step S103: by the second metal layer of an end joined of metal framework to polymer membrane.
In step s 103, metal framework can be the frame of square frame-shaped, in embodiments herein, by polymer
Diaphragm is set up after opening tension, and frame is bonded to the second metal layer of polymer membrane, and the mode of engagement can be using weldering
It connects.
Step S104: the second perforation for penetrating through preset metal layer and second metal layer is formed to predetermined position irradiation laser
Hole penetrates through the patterns of openings of polymer membrane, and the first through hole of the preset metal layer of perforation and the first metal layer.
In step S104, on the substrate of predetermined film forming, according to the shape of the Thinfilm pattern of predetermined film forming and position,
Perforation aperture or fluting are carried out to predeterminated position using laser, laser is injected from second metal layer, formed through second metal layer
It after second through hole, then penetrates through polymer membrane and forms patterns of openings, finally form the first through hole through the first metal layer.
Fig. 8 is corresponding to the flow diagram of the manufacturing method of the film formation mask of the application second embodiment, corresponding to this
Apply for that the manufacturing method of the film formation mask of second embodiment provides another side for forming the first through hole and the second through hole
Formula.Step S201 in Fig. 8 is identical as the step S101 of Fig. 7, and the step S103 of step S205 and Fig. 7 of Fig. 8 is identical, not with this
Repeat narration.The step of embodiment of Fig. 8 is different from the embodiment of fig.7 be step S202, S203, S204, S205 and
S207, detailed description are as follows for correlation step:
Step S201: forming preset metal layer in the first face of polymer membrane and the second face by electroless plating technology,
Wherein the first face of polymer membrane and the second face of polymer membrane are opposite.
Step S202: on the preset metal layer in second face in the first face and polymer membrane of polymer membrane respectively
Coat photoresist.
In step S202, first in the preset of the first face of polymer membrane by way of rotary coating or slot coated
Photoresist is coated on metal layer, after photoresist shapes and hardens, then in polymerization by way of rotary coating or slot coated
The preset metal layer in the second face of object diaphragm coats photoresist.In embodiments herein, photoresist can be positive-tone photo
Glue, but those skilled in the art will recognize that negative photoresist is also applied for the application.
Step S203: by photoetching offset plate figure.
In step S203, photoetching offset plate figure key step includes exposure, development.Photoresist exposes energy light source used
Can be laser light source or electronics light source beam, laser light source transmitting is the laser beam with certain wavelength (such as 365nm),
The transmitting of electronics light source beam has the electron beam of various electron energies.Photoresist developing is to dissolve photoresist by chemical solvent to be exposed
A part of light, and the remainder of photoresist forms photoetching offset plate figure.In embodiments herein, it is formed by photoetching
Glue pattern will namely be retained as the position of the first through hole and the second through hole.
Step S204: what the preset metal layer by electroplating technology in the first face of polymer membrane was not covered by photoresist
Surface forms the first metal layer, and the surface shape that the preset metal layer in the second face of polymer membrane is not covered by photoresist
At second metal layer.In embodiments herein, the thickness of the first metal layer and second metal layer can be 2 microns (μm)
To 100 microns (μm) be also possible between 10 microns (μm) to 40 microns (μm) or 30 microns (μm) to 80 microns (μm) it
Between or 50 microns (μm) to 90 microns (μm) between or 20 microns (μm) to 70 microns (μm) between or 5 microns of (μ
M) between 60 microns (μm), but it is not limited with thickness disclosed by the present embodiment.In embodiments herein, lead to
The thickness for controlling the first metal layer and second metal layer is crossed between 2 microns (μm) to 100 microns (μm), so that film formation mask
When to be formed by laser technology the hole or blocky of perforation, the first metal layer in the hole or blocky region
And second metal layer can completely be removed by laser, and obtain preferable aperture yield.
In step S204, the mode of electroplating technology and the step S102 phase in the manufacturing method of aforementioned first embodiment
Seemingly, the difference is that step S204 only forms first on the surface that preset metal layer is not covered by photoresist by electroplating technology
Metal layer or second metal layer.
Step S205: photoresist is removed to form multiple first through holes in the first metal layer, and in second metal layer
Form multiple second through holes.
In step S205, after the first metal layer and second metal layer are formed, by chemical solvent by photoresist from
The surface of preset metal layer removes.According to specific embodiment, selection can dissolve any chemical solvent of photoresist.Remove photoresist
Afterwards, the region that script photoresist is retained just forms not having in the first metal layer or second metal layer is arranged the first metal layer or the
The white space of two metal layers, this is the first perforation in the white space of the first metal layer in the first face of polymer membrane
Hole is the second through hole in the white space of the second metal layer in the second face of polymer membrane.
Step S206: by the second metal layer of an end joined of the metal framework of frame-shaped to polymer membrane.
Step S207: the predetermined position of the polymer membrane in multiple first through holes and multiple second through holes is shone
Penetrate multiple patterns of openings that laser forms perforation polymer membrane.
In step S207, on the substrate of predetermined film forming, shape and position in the Thinfilm pattern of predetermined film forming make
Perforation aperture or fluting are carried out with predeterminated position of the laser to the polymer membrane in the first through hole and the second through hole, is swashed
Light is injected from the default metal layer in the second face of polymer membrane, and the default metal layer through the second face of polymer membrane is formed
It after the extension of second through hole, then penetrates through polymer membrane and forms patterns of openings, finally through the first face of polymer membrane
Default metal layer forms the extension of the first through hole.
In the embodiment of the present application, the first metal layer and are respectively formed on polymer membrane two sides by film formation mask
The manufacturing method of two metal layers, so that high-resolution manufacturing process of the film formation mask of new combined type in Organic Light Emitting Diode
Middle energy yield with higher.
In addition, the step of by being initially formed preset metal layer, so that preset metal layer is set to polymer membrane and first
It between metal layer, and is set between polymer membrane and second metal layer, so that the first metal layer and second metal layer
It is able to be set to polymer membrane.
In addition, suitable metal layer thickness is electroplated by the first metal layer and second metal layer, so that film formation mask is logical
Laser is crossed to carry out obtaining preferable manufacturing yield when perforation aperture or fluting.
It should be noted that, in this document, the terms "include", "comprise" or its any other variant are intended to non-row
His property includes, so that the process, method, article or the device that include a series of elements not only include those elements, and
And further include other elements that are not explicitly listed, or further include for this process, method, article or device institute it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including being somebody's turn to do
There is also other identical elements in the process, method of element, article or device.
The embodiment of the present invention is described with above attached drawing, but the invention is not limited to above-mentioned specific
Embodiment, the above mentioned embodiment is only schematical, rather than restrictive, those skilled in the art
Under the inspiration of the present invention, without breaking away from the scope protected by the purposes and claims of the present invention, it can also make very much
Form belongs within protection of the invention.
Claims (13)
1. a kind of film formation mask, which is characterized in that the film formation mask includes:
Polymer membrane has the first face, the second face and multiple patterns of openings, and first face is opposite with second face
Setting, multiple patterns of openings penetrate through first face and second face；
The first metal layer is set on first face, and the first metal layer has multiple first through holes, and the multiple the
The shape of one through hole and position match with the shape of the multiple patterns of openings and position；
Second metal layer is set on second face, and the second metal layer has multiple second through holes, and the multiple the
The shape of two through holes and position match with the shape of the multiple patterns of openings and position；And
Two preset metal layers, are respectively arranged between the polymer membrane and the first metal layer, and are set to described
Between polymer membrane and the second metal layer；Wherein, multiple first through holes and multiple second through holes
Described two preset metal layers are penetrated through respectively.
2. film formation mask as described in claim 1, which is characterized in that the film formation mask further include: metal framework, the gold
The end face for belonging to frame is connected to the second metal layer, and forms bonding pad in the second metal layer；Wherein, the polymerization
Object diaphragm position is in the bonding pad.
3. film formation mask as claimed in claim 2, which is characterized in that wherein the first metal layer position is in the bonding pad
It is interior.
4. film formation mask as described in claim 1, which is characterized in that wherein:
The first metal layer has the first side and second side, and the first side of the first metal layer is adjacent to the polymer film
First face of piece, second side of the first metal layer deviate from the first face of the polymer membrane；
Opening area of first through hole in the first side of the first metal layer is greater than the second of the first metal layer
The opening area of side；
The second metal layer has third side and the 4th side, and the third side of the second metal layer is adjacent to the polymer film
Second face of piece, second face of the 4th side back from the polymer membrane of the second metal layer；
Opening area of second through hole in the 4th side of the second metal layer is greater than the third of the second metal layer
The opening area of side；And
Opening area of second through hole in the third side of the second metal layer is greater than the first of the first metal layer
The opening area of side.
5. film formation mask as described in claim 1, which is characterized in that wherein, the multiple patterns of openings is in second face
Opening area be greater than first face opening area.
6. film formation mask as described in claim 1, which is characterized in that wherein first through hole has built-in the multiple
Patterns of openings described at least one of patterns of openings；Second through hole has in built-in the multiple patterns of openings
At least one described patterns of openings.
7. film formation mask as described in claim 1, which is characterized in that the first metal layer and the second metal layer
Thickness is between 2 microns (μm) to 100 microns (μm) respectively.
8. film formation mask as claimed in claim 7, which is characterized in that the first metal layer and the second metal layer
Thickness is between 10 microns (μm) to 40 microns (μm) respectively.
9. film formation mask as described in claim 1, which is characterized in that the thickness of the preset metal layer is less than 1 micron (μm).
10. a kind of manufacturing method of film formation mask, which is characterized in that the manufacturing method the following steps are included:
Preset metal layer is formed in the first face of polymer membrane and the second face by electroless plating technology, wherein first face
It is oppositely arranged with second face；
The first metal layer is formed on the preset metal layer in first face by electroplating technology, and in second face
The preset metal layer on form second metal layer；And
Multiple second perforations for penetrating through the preset metal layer and the second metal layer are formed to predetermined position irradiation laser
Hole, multiple patterns of openings of the perforation polymer membrane and the perforation preset metal layer and the first metal layer
Multiple first through holes.
11. the manufacturing method of film formation mask as claimed in claim 10, which is characterized in that connect an end face of metal framework
To the second metal layer.
12. a kind of manufacturing method of film formation mask, which is characterized in that the manufacturing method the following steps are included:
Preset metal layer is formed in the first face of polymer membrane and the second face by electroless plating technology, wherein first face
It is oppositely arranged with second face；
Photoresist is respectively coated on the preset metal layer in first face and second face；
By the photoetching offset plate figure；
The preset metal layer by electroplating technology in first face does not form first by the surface of the photoresist overlay
Metal layer, and second face the preset metal layer not by the photoresist overlay surface formed the second metal
Layer；
The photoresist is removed to form multiple first through holes in the first metal layer, and in the second metal layer shape
At multiple second through holes；And
The predetermined position of the polymer membrane in multiple first through holes and multiple second through holes is shone
Laser is penetrated, to form the multiple patterns of openings for penetrating through the polymer membrane.
13. the manufacturing method of film formation mask as claimed in claim 12, which is characterized in that connect an end face of metal framework
To the second metal layer.
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| US201762540050P | 2017-08-01 | 2017-08-01 | |
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| CN201820911590.7U Active CN208608230U (en) | 2017-08-01 | 2018-06-13 | Manufacturing equipment for organic light emitting diode display |
| CN201820957531.3U Active CN208507735U (en) | 2017-08-01 | 2018-06-21 | Organic LED structure |
| CN201820957593.4U Active CN208507678U (en) | 2017-08-01 | 2018-06-21 | The image element structure of organic light emitting diode display |
| CN201810642272.XA Active CN109326732B (en) | 2017-08-01 | 2018-06-21 | Organic light-emitting diode structure and manufacturing method thereof |
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| CN201820957593.4U Active CN208507678U (en) | 2017-08-01 | 2018-06-21 | The image element structure of organic light emitting diode display |
| CN201810642272.XA Active CN109326732B (en) | 2017-08-01 | 2018-06-21 | Organic light-emitting diode structure and manufacturing method thereof |
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| Publication number | Publication date |
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| CN208507678U (en) | 2019-02-15 |
| CN109326730A (en) | 2019-02-12 |
| CN208608230U (en) | 2019-03-15 |
| CN109326730B (en) | 2024-02-13 |
| CN109326732B (en) | 2024-02-13 |
| CN208507735U (en) | 2019-02-15 |
| CN109326732A (en) | 2019-02-12 |
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