CN105555991A - Film-forming mask and touch panel substrate - Google Patents
Film-forming mask and touch panel substrate Download PDFInfo
- Publication number
- CN105555991A CN105555991A CN201480051077.XA CN201480051077A CN105555991A CN 105555991 A CN105555991 A CN 105555991A CN 201480051077 A CN201480051077 A CN 201480051077A CN 105555991 A CN105555991 A CN 105555991A
- Authority
- CN
- China
- Prior art keywords
- mask
- mentioned
- framework
- film formation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention provides a film-forming mask and a touch panel substrate. The film-forming mask comprises: a resin mask (5) on which is formed an opening pattern (4) corresponding to a thin-film pattern film-formed on a substrate; and a metal mask (11) of a magnetic metal member, which is provided on one side of the resin mask (5) with a gap (9) provided between the metal mask (11) and the resin mask (5), and in which are formed holes (13) of a size which encapsulate each of the openings of the opening pattern (4).
Description
Technical field
The present invention relates to the film formation mask for forming Thinfilm pattern on substrate, particularly relating to the distortion of the mask that the difference because of the linear expansivity between mask material and thin-film material can be suppressed to cause and improving film formation mask and the touch panel substrate of the positional precision of Thinfilm pattern.
Background technology
Film formation mask in the past uses the film formation mask that make use of flexible adhesion diaphragm, this flexible adhesive film makes the material be close to substrate surface be made up of flexible membrane to covering as the part in non-stacking region, after making flexible adhesion diaphragm be close to the whole surface of the film forming side of base material, optionally remove the flexibility adhesion diaphragm that the region for the formation of desired accumulation horizon is covered, afterwards, implement the film formation process forming accumulation horizon, finally, remove residual flexibility adhesion diaphragm on substrate surface, thus be formed into film mask (such as, with reference to patent documentation 1).
Patent documentation 1: Japanese Unexamined Patent Publication 2012-111985 publication.
But, in such film formation mask in the past, mask material is such as the flexible resin films such as polyimide, therefore exist and on film, produce the distortion such as gauffer, warpage because of this diaphragm and the difference being piled up in the linear expansivity such as between nesa coating as thin-film material on diaphragm, thus have the problem that the positional precision of the Thinfilm pattern of film forming is deteriorated.
Summary of the invention
Therefore, the present invention tackles such problem, its object is to provide the distortion of the mask that the difference because of the linear expansivity between mask material and thin-film material can be suppressed to cause and improves film formation mask and the touch panel substrate of the positional precision of Thinfilm pattern.
To achieve these goals, the film formation mask involved by the first invention is configured to be possessed: resin mask, and itself and the film forming Thinfilm pattern on substrate is formed with patterns of openings accordingly; And the metal mask of magnetic metal parts, it wraps the communicating pores of the size stating patterns of openings in being formed and being of a size of, and above-mentioned metal mask is arranged at the one side side of above-mentioned resin mask in the mode arranging gap between above-mentioned resin mask.
In addition, the touch panel substrate involved by the second invention uses above-mentioned film formation mask to carry out spatter film forming, and on transparent glass substrate, be formed with the electrode of nesa coating.
According to the present invention, owing to being provided with the gap of regulation between resin mask and metal mask, so when film forming, the attraction metal mask at the back side being configured at substrate can be utilized and make resin mask be close to real estate, and after film forming terminates, magnet produce the sucking action of metal mask is removed after, metal mask can be made to utilize its elastic recovering force to be separated from resin mask.Therefore, the film being piled up in resin mask disconnects, and the internal stress that the difference because of the linear expansivity between the material of resin mask and thin-film material causes also disconnects, thus can suppress the distortion of resin mask.So, the positional precision of the Thinfilm pattern being formed at substrate can be improved.
Accompanying drawing explanation
Fig. 1 is the centerline sectional view of the embodiment that film formation mask involved in the present invention is shown.
Fig. 2 is the exploded view of above-mentioned film formation mask, and (a) illustrates the first mask, and (b) illustrates the second mask.
Fig. 3 is the explanatory view of the formation of the communicating pores that above-mentioned second mask is shown, a () is sectional view when having carried out Wet-type etching from one side side, b () is sectional view when having carried out Wet-type etching from two sides, (c) illustrates the sectional view of face large for port area as the example of the resin mask side of above-mentioned first mask.
Fig. 4 is the sketch of the configuration example that the film deposition system using film formation mask of the present invention is shown.
Fig. 5 illustrates that film formation mask of the present invention is by the explanatory view of the setting in substrate for film deposition, a () illustrates that the situation that the sucking action of the magnetic force of the magnet at the back side being configured at substrate not yet plays, (b) illustrate that metal mask is attracted by the magnetic force of magnet and state with resin mask close contact.
Fig. 6 amplifies the explanatory view that a part of Fig. 5 is shown, (a) is the enlarged view of Fig. 5 (a), and (b) is the enlarged view of Fig. 5 (b).
Fig. 7 is the explanatory view that the film forming employing film formation mask involved in the present invention is shown.
Fig. 8 be illustrate above-mentioned film forming terminate after the explanatory view of state, after (a) illustrates that film forming is just tied, (b) illustrates magnet to the sucking action of metal mask by the state relieved.
Fig. 9 amplifies the explanatory view that a part of Fig. 8 is shown, (a) is the enlarged view of Fig. 8 (a), and (b) is the enlarged view of Fig. 8 (b).
Figure 10 is the vertical view of a configuration example of touch panel substrate use film formation mask involved in the present invention being shown and manufacturing.
Embodiment
With reference to the accompanying drawings embodiments of the present invention are described in detail below.Fig. 1 is the centerline sectional view of the embodiment that film formation mask involved in the present invention is shown.This film formation mask 1, for forming Thinfilm pattern on substrate, is configured to possess the first mask 2 and the second mask 3.
Above-mentioned first mask 2 for via patterns of openings 4 on substrate film forming thus formed Thinfilm pattern, it is the mask becoming main mask, as shown in Fig. 2 (a), consist of and possess resinous diaphragm (hereinafter referred to as " resin mask 5 "), metallic film 6 and the first framework 7.
Here, above-mentioned resin mask 5 is corresponding with multiple Thinfilm patterns of film forming on substrate, and being formed with multiple geomery through patterns of openings 4 identical with the geomery of this Thinfilm pattern, to be such as thickness the be polyimide or polyethylene terephthalate (PET) etc. of 10 μm ~ about 30 μm is through the resin-made diaphragm of visible ray.In addition, in the following description, to linear expansivity be with as by the linear expansivity of the glass of substrate for film deposition approximate 3 × 10
-6~ 5 × 10
-6/ DEG C about the situation of polyimide be described.
Specifically, for above-mentioned patterns of openings 4, under the state that the diaphragm of polyimide is fixed in the mode being set up in the first framework 7 described later, the laser beam being shaped as the shape of the patterns of openings 4 that will be formed is irradiated from the diaphragm of the one side side direction polyimide of above-mentioned diaphragm, thus forms above-mentioned patterns of openings 4.In this situation, above-mentioned diaphragm can be set on the transparent glass substrate being formed with multiple fiducial mark accordingly with the forming position of multiple patterns of openings 4 that will be formed, the said reference observed to be through transparent polyimide is labeled as target, irradiate above-mentioned laser beam, thus form multiple patterns of openings 4 at above-mentioned diaphragm.Or, also can with the spacing of the regulation preset, above-mentioned laser beam be moved stepwise in limit, while form multiple patterns of openings 4 in the face of above-mentioned diaphragm.
In addition, at the one side 5a of above-mentioned resin mask 5, and be formed with the exterior lateral area of effective area of above-mentioned multiple patterns of openings 4, the circumference along resin mask 5 is provided with the metallic film 6 be made up of independently multiple pattern.This metallic film 6 is welded in an end face 7a of the first framework 7 described later by spot welding, and for above-mentioned resin mask 5 being fixed on the first framework 7, this metallic film 6 is such as the metallic film metallic membrane plating of nickel etc. being formed as the thickness of about 30 μm.Or, special metal mask can be used and formed by sputtering or evaporation, also can after whole the film forming of the one side 5a of resin mask 5 have metallic film, carry out etching and form the pattern of independently multiple metallic film 6.
Further, the one side 5a side of above-mentioned resin mask 5 is provided with the first framework 7.This first framework 7 has the state of above-mentioned resin mask 5 to support resin mask 5 with erection, and the part of the metallic film 6 of resin mask 5 is welded in an end face 7a by spot welding.In addition, first framework 7 is such as the magnetic metal parts such as invar or invar alloy, there is in being of a size of the opening 8 of the size wrapping the multiple patterns of openings 4 stating resin mask 5, profile is in the frame-shaped with the roughly equal size of profile of above-mentioned resin mask 5, and such as thickness is about 30mm ~ 50mm.In addition, in Fig. 2 (b), Reference numeral 10 is the threaded holes for the first mask 2 being fixed on the second mask 3.
In the one side 5a side of the resin mask 5 of above-mentioned first mask 2, the mode in the gap 9 arranging the regulation predetermined between resin mask 5 is provided with the second mask 3.This second mask 3 causes resin mask 5 to be out of shape because of the difference of the linear expansivity between resin mask 5 and thin-film material for preventing thin-film material in above-mentioned resin mask 5 accumulation, this second mask 3 becomes sub-mask, is configured to possess metal mask 11 and the second framework 12 as Suo Shi Fig. 2 (b).
Here, above-mentioned metal mask 11 be formed with the communicating pores 13 of the size being of a size of at least one patterns of openings 4 of interior bag, such as thickness is the magnetic metal parts of 30 μm ~ about 50 μm, profile is be contained in the size in the opening 8 of above-mentioned first framework 7, and arranges in the mode being provided with above-mentioned gap 9 relative to above-mentioned resin mask 5.This gap 9 is preferably set to following size: if the magneticaction being arranged at the magnet at the back side of substrate is in metal mask 11, metal mask 11 then can be attracted to make it be close to resin mask 5, if the effect of the magnetic force of magnet is removed, then can utilize its elastic recovering force that metal mask 11 is separated from resin mask 5, such as this gap 9 is about 300 μm.In addition, the size of above-mentioned communicating pores 13 also can be the size of the multiple patterns of openings 4 of interior bag, but in order to reduce the stacked area of the thin-film material on resin mask 5, and the distortion of the resin mask 5 suppressing the difference because of the linear expansivity between mask material and thin-film material to cause, the size of communicating pores 13 is more preferably the size being set as an interior bag patterns of openings 4.
Specifically, above-mentioned communicating pores 13 can use the thin plate of photoresistive mask 14 pairs of magnetic metal parts carry out Wet-type etching and formed as illustrated in fig. 3.In this case, in Wet-type etching, magnetic metal parts is applied in isotropic etching, if therefore only etch from side, a face as Suo Shi this Fig. 3 (a), then communicating pores 13 is formed as its port area and narrows towards another side side from the forming surface side of photoresistive mask 14.In addition, if etch from side, two sides magnetic metal parts as Suo Shi this Fig. 3 (b), then the port area that communicating pores 13 is formed as side, two sides is greater than inside.Therefore, in order to the sidewall suppressing the thin-film material when film forming to be attached to communicating pores 13, and after film forming, metal mask 11 is easily separated from resin mask 5, and the side, face that metal mask 11 can make the port area of communicating pores 13 large as Suo Shi this Fig. 3 (c) is relative with resin mask 5.In addition, in the present embodiment, following situation is described: in order to suppress the edge of communicating pores 13 to become blocking of film forming, and using side, face little for the port area of communicating pores 13 as resin mask 5 side.Wherein, when spatter film forming, compared with evaporation, unrolling of sputtering particle is many, even if therefore as Suo Shi Fig. 3 (c) using side, face large for the port area of communicating pores 13 as resin mask 5 side, the impact that the edge of communicating pores 13 produces film forming is also little.
In the side contrary with above-mentioned resin mask 5 side of above-mentioned metal mask 11, be provided with the second framework 12.This second framework 12 has the state of above-mentioned metal mask 11 to support metal mask 11 with erection, and as shown in Fig. 2 (b), the circumference of metal mask 11 is welded in an end face 12a by spot welding.In addition, second framework 12 is such as the magnetic metal parts such as invar or invar alloy, there is in being of a size of the opening 15 of the size wrapping the multiple communicating poress 13 stating metal mask 11, profile is in the frame-shaped of the size be contained in the opening 8 of above-mentioned first framework 7, and such as thickness is about 30mm ~ 50mm.And, be provided with the flange 16 stretched out to the side contrary with above-mentioned opening 15 side in the 12b side, other end of above-mentioned second framework 12, the other end 7b of above-mentioned first framework 7 is detachably fixed on this flange 16 by screw element 17 (with reference to Fig. 1).In this case, under the state being fixed on the above-mentioned flange 16 of the second framework 12 at the first framework 7, determine the respective thickness of the first framework 7, second framework 12 and flange 16 in the mode producing above-mentioned gap 9.In addition, in Fig. 2 (b), Reference numeral 18 is the hole for inserting for screw element 17.
Next, the film forming employing the film formation mask 1 formed like this is described.In addition, in below illustrating, the situation that film deposition system is sputter equipment is as shown in Figure 4 described.
First, fixed by screw element 17 and assemble the first framework 7 of the first mask 2 and the second framework 12 of the second mask 3, thus being prepared to film mask 1.
Next, be mounted to film mask 1 by the mask holder 20 of mode in the vacuum chamber 19 being located at sputter equipment of substrate for film deposition (hereinafter referred to as " substrate 22 ") side with the first mask 2.In addition, be configured to can be arranged at the face of substrate 22 of substrate holder 21 abreast along the target support 23 that arrow A, B direction move back and forth, the target 24 of the such as columned tin indium oxide (hereinafter referred to as " ITO (IndiumTinOxide) ") as film forming material is installed, and the cylinder axis of this target 24 is intersected relative to above-mentioned travel direction.
If the installation of film formation mask 1 terminates, then, under the state closing gas importing valve 25, open outlet valve 26, the air in vacuum chamber 19 is discharged, and vacuumizes until become the vacuum tightness of the regulation predetermined.
If the vacuum tightness in vacuum chamber 19 reaches the value of regulation, then separate with gate valve 27, and utilize the illustrated substrate loader structure of omission that the substrate 22 be made up of transparent glass (Fig. 4, is arranged at inboard in the mode adjacent with vacuum chamber 19 from the illustrated cup of the omission remaining roughly the same vacuum tightness.) carry out, and substrate 22 is arranged at substrate holder 21.Afterwards, aforesaid substrate loader mechanism keeps out of the way above-mentioned cup, and gate valve 27 is closed.
Next, mask holder 20 moves along the arrow C direction in Fig. 4, and is arranged on substrate 22 by film formation mask 1.Specifically, as shown in Fig. 5 (a), the resin mask 5 of the first mask 2 is arranged in the film forming face of substrate 22.Now, as shown in Fig. 6 (a), between resin mask 5 and metal mask 11, ensure that the gap 9 of regulation.Afterwards, as shown in Fig. 5 (b), the magnetic force being built in the magnet 28 of substrate holder 21 plays a role, thus the metal mask 11 of the second mask 3 is attracted, this metal mask 11 Elastic deflection and press pressurizing resin mask 5, thus resin mask 5 is fixed on the film forming face of substrate 22 closely.Meanwhile, as shown in Fig. 6 (b), the surface of resin mask 5 is close to by metal mask 11.
Then, open gas and import valve 25 and regulate outlet valve 26, in vacuum chamber 19, import the rare gas elementes such as argon (Ar) gas until reach the prescribed value predetermined.
If the air pressure in vacuum chamber 19 reaches afore mentioned rules value, then give high-voltage to target support 23, and as shown in Figure 7, between target 24 and substrate 22, generate plasma body 29.And, make it move back and forth perform sputtering along the arrow A shown in Fig. 7, B direction while make target 24 rotate limit centered by its cylinder axis.In addition, specifically, the certain hour (pre-sputtering time) before formal sputtering starts, is inserted with and omits illustrated gate between target 24 and substrate 22, stops sputtering particle to be attached to substrate 22.
Perform the sputtering of the specified time predetermined, if pile up certain thickness ITO conducting film on substrate 22, then above-mentioned closing gate, sputtering terminates.And the high-tension imparting carried out relative to target support 23 is removed, thus as shown in Fig. 8 (a), the generation of plasma body 29 stops.Now, as shown in Fig. 9 (a), ITO conducting film 30 is piled up in the surface of target 24 side of the face of the substrate 22 in patterns of openings 4, the sidewall of patterns of openings 4, patterns of openings 4 circumference of resin mask 5, the sidewall of communicating pores 13 and metal mask 11.
Next, as shown in Fig. 8 (b), if the sucking action of magnetic force to metal mask 11 being built in the magnet 28 of substrate holder 21 is removed, then, as shown in Fig. 9 (b), metal mask 11 utilizes its elastic recovering force and turns back to original state.Thus, the ITO conducting film 30 being piled up in resin mask 5 separates with metal mask 11.In addition, meanwhile, the pressing force that the film forming face of the substrate 22 of metal mask 11 pairs of resin masks 5 applies is released, and therefore resin mask 5 is peeled off from the film forming face of substrate 22.So, form touch panel substrate 32 at the substrate 22 of transparent glass, this touch panel substrate 32 is formed with multiple electrodes 31 (Thinfilm pattern) of ITO conducting film 30 as illustrated in fig. 10.
Next, mask holder 20 is moved along the arrow D direction shown in Fig. 4, and film formation mask 1 is separated from substrate 22, and the rare gas element in vacuum chamber 19 is discharged.And, the gate valve 27 that vacuum chamber 19 and above-mentioned cup are separated is opened, and by aforesaid substrate loader mechanism, touch panel substrate 32 is taken out of to above-mentioned cup in vacuum chamber 19, on the other hand, move into new substrate 22 from above-mentioned cup, and be arranged at substrate holder 21.
Below, same as described above, new substrate 22 performs film forming, forms new touch panel substrate 32.And whenever terminating the film forming of substrate 22, metal mask 11 is just separated from resin mask 5, the ITO conducting film 30 being therefore piled up in resin mask 5 is each all from metal mask 11 separately.Therefore, the ITO conducting film 30 being piled up in resin mask 5 is only the circumference of patterns of openings 4, separated in adjacent patterns of openings 4, thus the string stress of ITO conducting film 30 disconnects, thus the distortion of resin mask 5 is suppressed.So, the positional precision of the electrode 31 be made up of ITO conducting film 30 can be improved.In addition, meanwhile, because the distortion of resin mask 5 is suppressed, so also have the advantage in the life-span extending resin mask 5.
In addition, in the above-described embodiment, the situation of the first mask 2 and the second mask 3 being attached respectively to framework is illustrated, but the present invention is not limited thereto, and the first mask 2 may also be only resin mask 5, second mask 3 and may also be only metal mask 11.In this case, metal spacer can be set between resin mask 5 and metal mask 11, to make to form gap 9 between the two.
In addition, in the above-described embodiment, be illustrated, but the present invention is not limited thereto to the situation that film deposition system is sputter equipment, film deposition system also can be evaporation coating device.
Further, in the above-described embodiment, be illustrated, but the present invention is not limited thereto to the situation that film is ITO conducting film 30, film also can be any one in the film of organic substance, the film of inorganic substance or metallic film.
The explanation of Reference numeral
1 ... film formation mask; 2 ... first mask; 3 ... second mask; 4 ... patterns of openings; 5 ... resin mask; 7 ... first framework; 9 ... gap; 11 ... metal mask; 12 ... second framework; 13 ... communicating pores; 22 ... substrate; 28 ... magnet; 30 ... nesa coating; 31 ... electrode; 32 ... touch panel substrate.
Claims (10)
1. a film formation mask, is characterized in that, is configured to possess:
Resin mask, itself and the film forming Thinfilm pattern on substrate is formed with patterns of openings accordingly; And
The metal mask of magnetic metal parts, it wraps the communicating pores of the size stating patterns of openings in being formed and being of a size of, and above-mentioned metal mask is arranged at the one side side of above-mentioned resin mask in the mode arranging gap between above-mentioned resin mask.
2. film formation mask according to claim 1, is characterized in that,
Above-mentioned gap between above-mentioned resin mask and above-mentioned metal mask is set to following size: if the magneticaction being arranged at the magnet at the back side of aforesaid substrate is in above-mentioned metal mask, then can attract above-mentioned metal mask and make above-mentioned metal mask be close to above-mentioned resin mask, if and the effect of the magnetic force of above-mentioned magnet is removed, then can utilize its elastic recovering force that above-mentioned metal mask is separated from above-mentioned resin mask.
3. the film formation mask according to claims 1 or 2, is characterized in that,
The port area of the open area ratio inside through holes of at least above-mentioned resin mask side of the above-mentioned communicating pores of above-mentioned metal mask is large.
4. film formation mask according to claim 1 and 2, is characterized in that,
The first framework is fixed in the circumference of above-mentioned resin mask, and the second framework is fixed in the circumference of above-mentioned metal mask,
To produce the mode in the gap of afore mentioned rules between above-mentioned resin mask and above-mentioned metal mask, be detachably fixed with above-mentioned first framework and above-mentioned second framework.
5. film formation mask according to claim 3, is characterized in that,
The first framework is fixed in the circumference of above-mentioned resin mask, and the second framework is fixed in the circumference of above-mentioned metal mask,
To produce the mode in the gap of afore mentioned rules between above-mentioned resin mask and above-mentioned metal mask, be detachably fixed with above-mentioned first framework and above-mentioned second framework.
6. film formation mask according to claim 1 and 2, is characterized in that,
Above-mentioned Thinfilm pattern is the nesa coating of spatter film forming.
7. film formation mask according to claim 3, is characterized in that,
Above-mentioned Thinfilm pattern is the nesa coating of spatter film forming.
8. film formation mask according to claim 4, is characterized in that,
Above-mentioned Thinfilm pattern is the nesa coating of spatter film forming.
9. film formation mask according to claim 5, is characterized in that,
Above-mentioned Thinfilm pattern is the nesa coating of spatter film forming.
10. a touch panel substrate, is characterized in that,
Use the film formation mask described in claim 1 to carry out spatter film forming, and on transparent glass substrate, be formed with the electrode of nesa coating.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195552A JP6168944B2 (en) | 2013-09-20 | 2013-09-20 | Deposition mask |
| JP2013-195552 | 2013-09-20 | ||
| PCT/JP2014/074708 WO2015041296A1 (en) | 2013-09-20 | 2014-09-18 | Film-forming mask and touch panel substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105555991A true CN105555991A (en) | 2016-05-04 |
| CN105555991B CN105555991B (en) | 2018-03-20 |
Family
ID=52688943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480051077.XA Expired - Fee Related CN105555991B (en) | 2013-09-20 | 2014-09-18 | Film formation mask and touch panel substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6168944B2 (en) |
| KR (1) | KR20160058091A (en) |
| CN (1) | CN105555991B (en) |
| TW (1) | TW201525163A (en) |
| WO (1) | WO2015041296A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107385391A (en) * | 2017-07-14 | 2017-11-24 | 京东方科技集团股份有限公司 | Mask plate, oled display substrate and preparation method thereof, display device |
| CN107686962A (en) * | 2016-08-05 | 2018-02-13 | 新日铁住金化学株式会社 | Deposition mask and its manufacture method and deposition mask layered product and its manufacture method |
| CN108508694A (en) * | 2018-03-30 | 2018-09-07 | 京东方科技集团股份有限公司 | Mask device and exposure sources |
| CN108873601A (en) * | 2017-05-10 | 2018-11-23 | 台湾积体电路制造股份有限公司 | Cuticula |
| CN109321877A (en) * | 2017-08-01 | 2019-02-12 | 上海自旭光电科技有限公司 | Film formation mask and its manufacturing method |
| CN109445632A (en) * | 2018-10-24 | 2019-03-08 | 信利光电股份有限公司 | A kind of metal grill touch screen manufacturing method |
| CN109689922A (en) * | 2016-09-30 | 2019-04-26 | 大日本印刷株式会社 | Deposition mask, the deposition mask of tape frame, deposition mask prepare body, vapor deposition pattern forming method, the manufacturing method of organic semiconductor device, the manufacturing method of organic EL display device |
| CN110268090A (en) * | 2017-02-10 | 2019-09-20 | 株式会社日本显示器 | The manufacturing device of deposition mask, the manufacturing method of deposition mask and deposition mask |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10934614B2 (en) | 2016-03-23 | 2021-03-02 | Hon Hai Precision Industry Co., Ltd. | Vapor deposition mask, vapor deposition mask production method, and organic semiconductor element production method |
| CN105714247A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Mask plate assembly for evaporation of OLED |
| JP6949507B2 (en) * | 2016-08-05 | 2021-10-13 | 日鉄ケミカル＆マテリアル株式会社 | Thin-film mask and its manufacturing method, and laminated body for thin-film mask and its manufacturing method |
| JP6749275B2 (en) * | 2017-03-31 | 2020-09-02 | 芝浦メカトロニクス株式会社 | Outer mask, plasma processing apparatus, and photomask manufacturing method |
| WO2019186902A1 (en) * | 2018-03-29 | 2019-10-03 | シャープ株式会社 | Vapor deposition mask and method for manufacturing vapor deposition mask |
| JP6658790B2 (en) * | 2018-04-19 | 2020-03-04 | 大日本印刷株式会社 | Evaporation mask, evaporation mask with frame, evaporation mask preparation, method of manufacturing evaporation mask, method of manufacturing organic semiconductor element, method of manufacturing organic EL display, and method of forming pattern |
| JP2021165424A (en) * | 2020-04-08 | 2021-10-14 | 株式会社ブイ・テクノロジー | Vapor deposition mask frame, vapor deposition mask with frame and vapor deposition method |
| KR20220021994A (en) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | Mask, method of manufacturing the same, and method of manufacturing display panel |
| CN112359317A (en) * | 2020-10-27 | 2021-02-12 | 京东方科技集团股份有限公司 | Mask plate and preparation method of display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1800432A (en) * | 2005-01-06 | 2006-07-12 | 精工爱普生株式会社 | Method of forming mask and mask |
| CN1834282A (en) * | 2005-01-20 | 2006-09-20 | 精工爱普生株式会社 | Device and method of forming film |
| JP2010242141A (en) * | 2009-04-02 | 2010-10-28 | Bonmaaku:Kk | Vapor deposition mask, and method for producing the same |
| JP2013142196A (en) * | 2012-01-12 | 2013-07-22 | Dainippon Printing Co Ltd | Vapor deposition mask |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3539229B2 (en) * | 1997-10-15 | 2004-07-07 | 東レ株式会社 | Method for manufacturing organic electroluminescent device |
| JP4200290B2 (en) * | 2003-05-21 | 2008-12-24 | パナソニック株式会社 | Mask unit |
| JP4269986B2 (en) * | 2004-03-19 | 2009-05-27 | 住友金属鉱山株式会社 | Oxide sintered compact target for manufacturing transparent conductive thin film, transparent conductive thin film, transparent conductive substrate, display device, and organic electroluminescence element |
| JP2010180438A (en) * | 2009-02-04 | 2010-08-19 | Mitsubishi Electric Corp | Mask unit, and vapor deposition apparatus having the same |
| JP5288072B2 (en) * | 2012-01-12 | 2013-09-11 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask device manufacturing method, and organic semiconductor element manufacturing method |
| JP6142194B2 (en) * | 2012-11-15 | 2017-06-07 | 株式会社ブイ・テクノロジー | Vapor deposition mask manufacturing method and vapor deposition mask |
| JP5958824B2 (en) * | 2012-11-15 | 2016-08-02 | 株式会社ブイ・テクノロジー | Manufacturing method of vapor deposition mask |
| KR102218952B1 (en) * | 2013-03-26 | 2021-02-23 | 다이니폰 인사츠 가부시키가이샤 | Deposition mask, preparatory body for deposition mask, method for manufacturing deposition mask, and method for manufacturing organic semiconductor element |
| KR20150143433A (en) * | 2013-04-12 | 2015-12-23 | 다이니폰 인사츠 가부시키가이샤 | Vapor deposition mask, vapor deposition mask precursor, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method |
-
2013
- 2013-09-20 JP JP2013195552A patent/JP6168944B2/en not_active Expired - Fee Related
-
2014
- 2014-09-18 KR KR1020167004934A patent/KR20160058091A/en not_active Application Discontinuation
- 2014-09-18 WO PCT/JP2014/074708 patent/WO2015041296A1/en active Application Filing
- 2014-09-18 TW TW103132201A patent/TW201525163A/en unknown
- 2014-09-18 CN CN201480051077.XA patent/CN105555991B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1800432A (en) * | 2005-01-06 | 2006-07-12 | 精工爱普生株式会社 | Method of forming mask and mask |
| CN1834282A (en) * | 2005-01-20 | 2006-09-20 | 精工爱普生株式会社 | Device and method of forming film |
| JP2010242141A (en) * | 2009-04-02 | 2010-10-28 | Bonmaaku:Kk | Vapor deposition mask, and method for producing the same |
| JP2013142196A (en) * | 2012-01-12 | 2013-07-22 | Dainippon Printing Co Ltd | Vapor deposition mask |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107686962A (en) * | 2016-08-05 | 2018-02-13 | 新日铁住金化学株式会社 | Deposition mask and its manufacture method and deposition mask layered product and its manufacture method |
| CN109689922A (en) * | 2016-09-30 | 2019-04-26 | 大日本印刷株式会社 | Deposition mask, the deposition mask of tape frame, deposition mask prepare body, vapor deposition pattern forming method, the manufacturing method of organic semiconductor device, the manufacturing method of organic EL display device |
| CN110268090A (en) * | 2017-02-10 | 2019-09-20 | 株式会社日本显示器 | The manufacturing device of deposition mask, the manufacturing method of deposition mask and deposition mask |
| CN108873601A (en) * | 2017-05-10 | 2018-11-23 | 台湾积体电路制造股份有限公司 | Cuticula |
| US11868041B2 (en) | 2017-05-10 | 2024-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle and method of using the same |
| CN107385391A (en) * | 2017-07-14 | 2017-11-24 | 京东方科技集团股份有限公司 | Mask plate, oled display substrate and preparation method thereof, display device |
| US10763434B2 (en) | 2017-07-14 | 2020-09-01 | Boe Technology Group Co., Ltd. | Mask plate, organic light-emitting diode display panel, manufacturing methods thereof, and display device |
| CN109321877A (en) * | 2017-08-01 | 2019-02-12 | 上海自旭光电科技有限公司 | Film formation mask and its manufacturing method |
| CN108508694A (en) * | 2018-03-30 | 2018-09-07 | 京东方科技集团股份有限公司 | Mask device and exposure sources |
| CN108508694B (en) * | 2018-03-30 | 2021-10-29 | 京东方科技集团股份有限公司 | Mask device and exposure apparatus |
| CN109445632A (en) * | 2018-10-24 | 2019-03-08 | 信利光电股份有限公司 | A kind of metal grill touch screen manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6168944B2 (en) | 2017-07-26 |
| CN105555991B (en) | 2018-03-20 |
| WO2015041296A1 (en) | 2015-03-26 |
| KR20160058091A (en) | 2016-05-24 |
| JP2015059262A (en) | 2015-03-30 |
| TW201525163A (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105555991A (en) | Film-forming mask and touch panel substrate | |
| CN105531394B (en) | Film formation mask, film formation device, film build method and touch panel substrate | |
| TWI737969B (en) | Vapor deposition mask for the manufacture of organic semiconductor elements, manufacturing method of vapor deposition mask for the manufacture of organic semiconductor elements, vapor deposition mask preparations for the manufacture of organic semiconductor elements, pattern formation method, and organic semiconductor elements Manufacturing method | |
| TWI705150B (en) | Manufacturing method of vapor deposition mask, laminate, pattern manufacturing method, and organic semiconductor element manufacturing method | |
| KR100696554B1 (en) | Deposition apparatus | |
| JP2011233510A (en) | Deposition device | |
| US20130133573A1 (en) | Mask for Deposition and Manufacturing Method of the Same | |
| JP2010189756A (en) | Mask tightly-contacting means for vapor deposition apparatus, and vapor deposition apparatus using the same | |
| TW201402851A (en) | Method for sputtering for processes with a pre-stabilized plasma | |
| CN106906441B (en) | Film forming system, magnetic body, and film manufacturing method | |
| US20100206713A1 (en) | PZT Depositing Using Vapor Deposition | |
| JP5186297B2 (en) | Sputtering equipment | |
| JP2020066800A (en) | Plasma passage for high-capacity plasma cvd processing | |
| US20160248049A1 (en) | Deposition apparatus | |
| KR20110033362A (en) | Sputter gun having discharge anode for high uniformity film fabrication | |
| JP4728089B2 (en) | Sheet plasma generator and film forming apparatus | |
| WO2008004593A1 (en) | Plasma film deposition system and method for producing film | |
| JP4368417B2 (en) | Plasma generator, film forming method and film forming apparatus using the same | |
| KR20190055219A (en) | Magnetic arrangement for a sputter deposition source, and a magnetron sputter deposition source, and a method for depositing a film on a substrate with a magnetron sputter deposition source | |
| KR20170133566A (en) | Sputtering apparauts and sputtering method using the same | |
| KR101144125B1 (en) | Sputter gun comprising mask | |
| KR100673750B1 (en) | Manufacturing method of organic thin-film using ion beam sputtering | |
| JP2015014024A (en) | Sputtering apparatus and sputtering film deposition method | |
| US20130306466A1 (en) | Target for sputtering and apparatus including the same | |
| JP2007314841A (en) | Mask for use in forming film by sputtering, and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180320 Termination date: 20200918 |