JP2021165424A - Vapor deposition mask frame, vapor deposition mask with frame and vapor deposition method - Google Patents

Abstract

To provide a vapor deposition mask frame that is light-weight, has high rigidity and suppresses generation of an out gas.SOLUTION: A vapor deposition mask frame 50 includes a frame body 51 configured so as to hold a vapor deposition mask 30. The frame body includes a substrate and a reinforcement material, both of which are made of a resin-free carbon fiber-reinforced carbon composite material (C/C composite: Carbon-carbon composite), or the composite material to which a metal is applied as the substrate is an inorganic solid material of a metal-base composite material (MMC: Metal matrix composites).SELECTED DRAWING: Figure 2

Description

The embodiment relates to a frame for a vapor deposition mask, a vapor deposition mask with a frame, and a vapor deposition method.

In the manufacture of organic EL (electro-luminescence) panels, a thin-film deposition mask used for depositing a vapor-deposited substance such as an organic substance on a substrate to be vapor-deposited in a thin-film deposition chamber and a frame for a thin-film deposition mask holding the vapor-deposited mask are known. There is.

When a high-definition pattern is formed by the thin-film deposition process, the thickness of the thin-film deposition mask may block the vapor-deposited material incident from an oblique direction, resulting in a shadow problem in which the inside of the pixel is not uniformly deposited. Therefore, it is desirable that the vapor deposition mask be designed as a thin film. The thin-film vapor deposition mask tends to have low rigidity, and it may not be easy to position the thin-film deposition mask alone with respect to the substrate to be vapor-deposited with high accuracy. Therefore, the thin-film deposition mask frame is required to have a function of improving the positioning accuracy of the thin-film deposition mask with respect to the substrate to be vapor-deposited instead of the thin-film deposition mask by having high rigidity.

Further, during the vapor deposition process, heat from the vapor deposition source is radiated to the vapor deposition mask and the frame for the vapor deposition mask, causing thermal deformation of the vapor deposition mask and the frame for the vapor deposition mask. Therefore, it is desirable that the frame for the vapor deposition mask has a coefficient of thermal expansion as low as that of the vapor deposition mask in order to suppress the deformation of the vapor deposition mask due to the temperature change. Since an Invar alloy is often used for the vapor deposition mask, the Invar alloy is also often used for the frame for the vapor deposition mask.

Further, in Patent Document 1, a columnar core portion containing voids formed of carbon fiber reinforced plastics (CFRP) made of silicon carbide and the voids in the columnar core portion are exposed. A frame for a vapor deposition mask has been proposed, which covers the periphery of a side surface including a surface and is formed in a sandwich structure with a face plate made of CFRP or a metal plate attached to a core portion.

Japanese Unexamined Patent Publication No. 2019-112713

As the size of the organic EL panel increases, the frame for the vapor deposition mask used for manufacturing the organic EL panel tends to increase in size and mass. Therefore, when an Invar alloy having a density of about 8.1 [g / cm ³ ] is used as the frame for the vapor deposition mask, the load applied to the transfer robot for transporting the frame for the vapor deposition mask in the vapor deposition apparatus becomes excessive. As a result, the cost of the vapor deposition apparatus may increase.

On the other hand, CFRP has a high rigidity and a density of about 1.6 [g / cm ³ ], so that a frame for a vapor deposition mask that is lighter than an Invar alloy can be formed. Therefore, from the viewpoint of reducing the load applied to the transfer robot, it may be more advantageous than the Invar alloy.

However, CFRP contains plastic (resin). Although the resin used in Patent Document 1 has thermosetting property, it can cause outgas generation in a vacuum environment in the vapor deposition chamber, and can cause contamination of the substrate to be vapor-deposited by the outgas.

The present invention has been made in view of such an actual situation, and an object of the present invention is to provide a frame for a thin-film deposition mask which is lightweight, has high rigidity, and suppresses the generation of outgas.

The present invention employs the following configuration in order to solve the above-mentioned problems.

That is, the thin-film deposition mask frame of the embodiment includes a frame body configured to hold the thin-film deposition mask. The frame body is a composite material in which both the base material and the reinforcing material are made of an inorganic solid material.

According to the present invention, it is possible to provide a thin-film deposition mask frame that is lightweight, has high rigidity, and suppresses the generation of outgas.

The schematic diagram which shows the structure of the vapor deposition apparatus of embodiment. The plan view and the side view which show the structure of the thin-film deposition mask with a frame of embodiment. The cross-sectional view which shows the structure of the vapor deposition mask with a frame of embodiment. The schematic diagram which shows the vapor deposition mask with a frame installed in the vapor deposition chamber of the vapor deposition apparatus of embodiment. The schematic diagram for demonstrating the effect of embodiment. The plan view and the side view which show the structure of the vapor deposition mask with a frame of the modification.

Hereinafter, embodiments will be described with reference to the drawings. Each embodiment illustrates an apparatus or method for embodying the technical idea of the invention. The drawings are schematic or conceptual, and the dimensions and ratios of each drawing are not necessarily the same as the actual ones. The technical idea of the present invention is not specified by the shape, structure, arrangement, etc. of the components.

In the following description, components having substantially the same function and configuration are designated by the same reference numerals. When a plurality of components having substantially the same function and configuration are distinguished from each other, a number or a letter assigned to each of the plurality of components is further added to the end of the reference code.

1. 1. Embodiment The frame for a vapor deposition mask according to the embodiment will be described. The thin-film deposition mask frame according to the embodiment is a frame for holding the thin-film deposition mask used for forming the thin-film deposition pattern on the substrate to be vapor-deposited in the manufacturing process of the organic EL panel. The thin-film deposition mask frame has a property of being hardly deformed by heat or its own weight, and by joining with the thin-film deposition mask, accurate positioning of the thin-film deposition mask with respect to the substrate to be vapor-deposited can be easily performed.

As the display method of the organic EL panel, there are a method in which the organic EL layers of the three primary colors of red, blue, and green, each of which is independently vapor-deposited, are individually emitted to emit a colored display, and a method in which the white organic is vapor-deposited on one surface. There may be a method of displaying the white emission of the EL layer in color through a color filter. The thin-film mask frame according to the embodiment can be applied to any of the above-mentioned display methods for manufacturing an organic EL panel.

1.1 Configuration First, a frame for a vapor deposition mask and a vapor deposition mask with a frame according to an embodiment, and a configuration of a vapor deposition apparatus to which the vapor deposition mask with a frame is applied will be described.

1.1.1 Thin-film Deposition Device FIG. 1 is a schematic diagram for explaining the configuration of the thin-film deposition device according to the embodiment. FIG. 1 shows an overview of a part of a thin-film deposition apparatus 1 for depositing a vapor-deposited substance on a substrate to be vapor-deposited to function as an organic EL panel.

As shown in FIG. 1, the vapor deposition apparatus 1 includes at least one cluster CTR including a transport chamber 2, a delivery chamber 3 and 4, a mask stock chamber 5, and a plurality of vapor deposition chambers 6 (6A, 6B, and 6C). , Cleaning room 8 is added. Inside the vapor deposition apparatus 1, for example, ^{a vacuum state of 1.0 × 10 -4} [Pa] or less can be maintained.

The transport chamber 2 is provided at the center of, for example, the delivery chambers 3 and 4, the mask stock chamber 5, and the plurality of vapor deposition chambers 6A to 6C. A transfer robot 7 is provided in the transfer chamber 2. The transport chamber 2 is configured to be capable of transporting the substrate to be vapor-deposited (not shown) to any of the delivery chambers 3 and 4, the mask stock chamber 5, and the plurality of vapor deposition chambers 6A to 6C via the transfer robot 7. NS.

The delivery chambers 3 and 4 are, for example, rooms for delivering the substrate to be vapor-deposited to another cluster CTR (not shown), and each connects between the two cluster CTRs.

The mask stock chamber 5 is a room in which a plurality of thin-film deposition masks (not shown) corresponding to the patterns to be vapor-deposited in the plurality of thin-film deposition chambers 6A to 6C provided in the same cluster CTR are stored. As will be described later, each of the plurality of thin-film deposition masks stored in the mask stock chamber 5 can be stored in a state of being integrated with a thin-film deposition mask frame (not shown) (state of a thin-film deposition mask with a frame). Further, the mask stock chamber 5 has a function of performing a replacement step of replacing the pressure in the chamber between the vacuum environment and the atmospheric pressure environment.

The thin-film deposition chambers 6A to 6C have a function for depositing different vapor-deposited substances on the substrate to be vapor-deposited. The substrates to be vapor-deposited are conveyed to the vapor deposition chambers 6A to 6C in a predetermined order by the transfer robot 7. As a result, predetermined vapor-deposited substances are vapor-deposited on the substrate to be vapor-deposited in a predetermined order. In the production of an organic EL panel, for example, as a vapor deposition substance, a light emitting material, an electron transport material, and a hole transport material, which are organic materials, are vapor-deposited on a substrate to be vapor-deposited.

In the example of FIG. 1, an example in which three vapor deposition chambers 6A to 6C are connected to one cluster CTR is shown, but the present invention is not limited to this, and an arbitrary number of vapor deposition chambers are connected to one cluster CTR. Can be done.

The transfer robot 7 has an arm portion 7a and a hand portion 7b connected to the tip of the arm portion 7a. The hand portion 7b is configured to be able to support a thin-film deposition substrate or a thin-film deposition mask with a frame. The arm portion 7a is configured to be capable of freely transporting the vapor-deposited substrate or the vapor-deposited mask with a frame supported by the hand portion 7b to all the chambers 3 to 6 in the same cluster CTR connected to the transport chamber 2.

With the above configuration, the thin-film deposition apparatus 1 can sequentially deposit various vapor-deposited substances for making the substrate to be vapor-deposited function as an organic EL panel while maintaining a vacuum environment.

The atmospheric pressure environment is maintained in the washing chamber 8. In the cleaning chamber 8, the thin-film deposition mask with a frame is conveyed from the mask stock chamber 5 which has been in an atmospheric pressure environment through the replacement step. The cleaning chamber 8 is provided with a cleaning device for cleaning the conveyed thin-film deposition mask with a frame and removing the vapor-deposited substances and the like adhering to the vapor deposition process.

1.1. The upper part of FIG. 2 (FIG. 2A) shows a plan view of the thin-film deposition mask with a frame along a plane parallel to the joint surface between the thin-film deposition mask and the frame for the thin-film deposition mask. A side view of the short side of the thin-film deposition mask with a frame is shown in the lower part of FIG. 2 (FIG. 2 (B)). FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2, and some possible aspects of the vapor deposition mask are exemplified as FIGS. 3 (A) and 3 (B).

In FIGS. 2 and 3, as an example, a plurality of submasks M (M1, M2, M3, ...) Constituting the vapor deposition mask 30 are integrally formed by being joined to the vapor deposition mask frame 50. The vapor deposition mask 10 is shown. In FIG. 2, for convenience of explanation, in the thin-film deposition mask 10 with a frame, the region α in which the submasks M1 to M3 are joined and the region β in which the submasks M are omitted (not joined) are combined. Is shown. Actually, the thin-film deposition mask 10 with a frame is used in the vapor deposition process described later in a state where the sub-mask M is also bonded to the region β and the sub-mask M is bonded to both the regions α and β. ..

The details of the thin-film deposition mask 30 and the thin-film deposition mask frame 50 constituting the thin-film deposition mask 10 with a frame will be described below with reference to FIGS. 2 and 3. In the following description, the bonding surface between the vapor deposition mask 30 and the vapor deposition mask frame 50 in the framed vapor deposition mask 10 is a PQ plane, and the directions along the short and long sides of the framed vapor deposition mask 10 in the PQ plane are defined. Let it be the P direction and the Q direction, respectively. Further, the direction perpendicular to the PQ plane (the thickness direction of the thin-film deposition mask 10 with a frame) is defined as the R direction.

1.1.2. Vapor deposition mask First, the configuration of the vapor deposition mask 30 will be described.

As shown in FIG. 2, the thin-film deposition mask 30 is joined so as to cover one surface of the space FS bordered by the thin-film deposition mask frame 50 at the joint surface with the thin-film deposition mask frame 50. Each of the plurality of submasks M constituting the vapor deposition mask 30 has, for example, a rectangular shape and has a thickness of about several micrometers to several tens of micrometers ([μm]).

Both ends of the rectangular submask M along the Q direction pass through the space FS in the thin-film deposition mask frame 50 and reach two opposing short sides of the thin-film deposition mask frame 50, and the thin-film deposition mask is formed on the two short sides. It is joined to the frame 50. Each of the plurality of submasks M is formed with a plurality of openings 31 each having a plurality of opening APs for giving a vapor deposition pattern to the substrate to be deposited in the space FS within the frame of the vapor deposition mask frame 50. By joining the plurality of submasks M having the above configuration side by side along the P direction of the thin-film deposition mask frame 50, the space FS in the thin-film deposition mask frame 50 is formed on one surface of the thin-film deposition mask frame 50. Be covered.

As shown in FIG. 3A, the vapor deposition mask 30 according to the present embodiment may be a metal mask in which an opening AP is formed in the metal layer 30A bonded to the vapor deposition mask frame 50. When the metal mask is applied to the vapor deposition mask 30 according to the present embodiment, the material of the metal layer 30A is not particularly limited, and for example, stainless steel, iron-nickel alloy, aluminum alloy and the like can be applied. In particular, the Invar alloy, which is an alloy mainly composed of iron and nickel, has a relatively small coefficient of linear expansion and thus suppresses misalignment due to thermal deformation, which may be more advantageous than other materials.

Examples of the method for manufacturing a metal mask include the following methods.

For example, first, a resist (not shown) is applied onto a metal layer 30A which is a metal foil such as Invar alloy, nickel, aluminum, or stainless steel.

Subsequently, the exposure process and the development process remove the portion of the resist corresponding to the opening AP to be formed in the metal layer 30A.

Subsequently, the portion of the metal layer 30A exposed in the portion from which the resist has been removed is selectively removed by an etching process, so that an opening AP is formed in the metal layer 30A. As a result, a metal mask is manufactured.

The opening AP of the metal layer 30A can be formed by various methods regardless of the etching treatment using a resist. For example, the opening AP of the metal layer 30A may be formed by melting or evaporating the portion of the metal layer 30A corresponding to the opening AP with a laser beam.

Further, as shown in FIG. 3B, the vapor deposition mask 30 according to the present embodiment may be a hybrid mask in which the resin layer 30C is laminated on the metal layer 30B bonded to the vapor deposition mask frame 50. In the hybrid mask, for example, an opening AP corresponding to the vapor deposition pattern may be formed in the resin layer 30C, and a through hole H containing the opening AP may be formed in the metal layer 30B. When the hybrid mask is applied to the vapor deposition mask 30 according to the present embodiment, the material of the metal layer 30B is not particularly limited, and the same material as the metal layer 30A in the metal mask can be applied. The material of the resin layer 30C is also not particularly limited, but for example, an opening AP can be formed with high definition by laser processing or the like, and a small linear expansion coefficient and a hygroscopicity are set in order to suppress the positional deviation due to thermal deformation. The material to have is desirable. Examples of the combination of materials applied to the metal layer 30A and the resin layer 30C include the case where nickel is used for the metal layer 30A and polyimide is used for the resin layer 30C.

The metal layer 30B may be bonded to the vapor deposition mask frame 50 in close contact with the resin layer 30C, or may be bonded to the vapor deposition mask frame 50 in a state of being separated and independent from the resin layer 30C. ..

Examples of the method for manufacturing the hybrid mask include the following methods.

For example, first, a resin layer 30C, which is a film of polyester, polyimide, or acrylic resin, is attached onto a metal layer 30B, which is a metal foil such as Inver alloy, nickel, aluminum, or stainless steel, and then the metal layer 30B and resin. A laminated film of layer 30C is formed.

Subsequently, a resist (not shown) is applied to the surface of the metal layer 30B on the side where the resin layer 30C is not formed, and then the resist is formed on the metal layer 30B by exposure treatment and development treatment. The portion corresponding to the planned through hole H is removed.

Subsequently, the portion of the metal layer 30B exposed in the portion from which the resist has been removed is selectively removed by an etching process, so that a through hole H is formed in the metal layer 30B.

Subsequently, the laser beam is irradiated to the portion of the resin layer 30C where the opening AP of the resin layer 30C contained in the through hole H of the metal layer 30B is to be formed. As a result, the portion of the resin layer 30C is melted, evaporated, or decomposed to form an opening AP, and a hybrid mask is manufactured.

The laminated film can be formed by various methods regardless of the method of attaching the resin layer 30C on the metal layer 30B. For example, the laminated film may be formed by plating the metal layer 30B on the resin layer 30C.

Further, the through hole H of the metal layer 30B can be formed by various methods regardless of the method formed by the etching process. For example, a resist (not shown) is applied onto the resin layer 30C. Subsequently, the portion of the resist other than the portion corresponding to the through hole H of the metal layer 30B is removed by the exposure treatment and the development treatment. After that, the metal layer 30B may be formed by plating the metal layer 30B on the portion of the resin layer 30C from which the resist has been removed.

11.2.2 Vapor deposition mask frame Next, the configuration of the vapor deposition mask frame 50 will be described.

The thin-film mask frame 50 includes a frame body 51 having a plurality of supporting holes 52, and a plurality of first pedestals 53 and a plurality of second pedestals 54, each of which is embedded and fixed in the frame body 51. The vapor deposition mask 30 is fixed to the vapor deposition mask frame 50 by being joined to the plurality of first pedestals 53 and the plurality of second pedestals 54.

The frame body 51 is an integrally molded rectangular frame, and is deformed by thin-film deposition mask 30 by being joined to the vapor deposition mask 30 via a plurality of first pedestals 53 and a plurality of second pedestals 54. Mainly responsible for the function of suppressing.

The frame body 51 is made of a composite material. The term "composite material" as used herein means a material obtained by integrally combining two or more different materials that do not cause a chemical reaction, an alloying reaction, or the like with each other during a manufacturing process. Some composite materials are composed of a base material (matrix) that is continuously bonded to the entire material and a reinforcing material that enhances physical properties. The reinforcing material may be a fiber material or a porous material.

In the present embodiment, the base material and the reinforcing material of the composite material constituting the frame main body 51 are both made of an inorganic solid material. The term "inorganic solid material" as used herein means a material that is a solid rather than a liquid or gas at room temperature (0 ° C. to 100 ° C.) and substantially does not contain an organic material containing both carbon and hydrogen. The presence of a trace amount of organic material that does not affect the properties of the material is acceptable.

As a specific example of the base material, aluminum, copper, silicon, or carbon is preferable. Further, as a specific example of the reinforcing material, carbon, silicon carbide, or silicon is preferable. In addition to these materials, magnesium, copper alloy, or zinc alloy may be used as the base material. As the reinforcing material, alumina, aluminum borate, and aluminum nitride may be used. Further, as the shape of the reinforcing material, a fiber shape or a porous body shape is preferable.

When the frame body 51 formed of the composite material according to the present embodiment is to be made lighter than the frame body formed of the Invar alloy, at least one of the above-mentioned base material and the reinforcing material is made of the Invar alloy. It is desirable that the element is composed of an element having a lower atomic number than the constituent element. Specifically, as the set of the reinforcing material and the base material constituting the composite material, a set of carbon-containing fiber (hereinafter referred to as carbon fiber) and carbon, a set of carbon fiber and aluminum, a set of carbon fiber and copper, and a set of carbon. A set of fibers and silicon, a set of porous silicon carbide and aluminum, a set of porous silicon and aluminum, and a set of porous silicon carbide and silicon are preferable because they are lightweight, have high strength, and are highly available. Examples of carbon fibers include fibers made of carbon and fibers made of silicon carbide. When a carbon fiber and carbon set is applied as a set of the reinforcing material and the base material, the composite material is also referred to as a carbon fiber reinforced carbon composite (C / C composite). In addition, composite materials to which a metal is applied as a base material are also referred to as metal matrix composites (MMC).

As an example of a method for producing a composite material when carbon fiber is used as a reinforcing material, first, a fiber material as a raw material is laminated and molded to produce a prepreg. Then, by firing the prepreg, the material constituting the fiber is converted into an inorganic solid material (graphite). Subsequently, the fired prepreg is impregnated with a base material and then fired to produce a composite material. The impregnation treatment of the base material and the subsequent firing treatment may be repeated a plurality of times.

As the fiber material which is a raw material of carbon fiber, when the fiber is made of carbon, a PAN (Polyacrylonitrile) type and a pitch (Pitch) type are known. Polycarbosilane is known when the fiber consists of silicon carbide. Further, a phenol resin liquid is known as a base material before being graphitized by a firing treatment.

As an example of a method for producing a composite material when a porous material is used as a reinforcing material, a porous material is produced by first shaping a granular reinforcing material and then sintering it. Then, the composite material is produced by impregnating the porous body with a base material. The method for producing the composite material when a porous material is used as the reinforcing material is not limited to the above example. For example, the composite material may be produced by adding a reinforcing material to the dissolved base material and then placing it in a mold to solidify it.

Regardless of whether the reinforcing material is in the form of a fiber or a porous body, a flowability improving agent may be used in order to facilitate impregnation of the base material.

The frame body 51 formed of the composite material described above does not contain a resin that causes outgassing. The resin in the present specification means a polymer compound mainly composed of an organic material. Therefore, the frame body 51 does not cause outgassing in a vacuum environment. The frame body 51 also has solubility resistance to an organic solvent used in the cleaning treatment of the vapor deposition mask 30.

The plurality of support holes 52 are provided, for example, on one of the two short sides of the frame body 51 so as to be arranged along the P direction. The thin-film vapor deposition mask 10 with a frame is suspended and supported by pins penetrating the plurality of support holes 52 during the thin-film deposition process.

Each of the plurality of first pedestals 53 and the plurality of second pedestals 54 has a boss or block shape, and is embedded and fixed in the frame body 51. The plurality of first pedestals 53 and the plurality of second pedestals 54 are preferably made of a metal material. More specifically, it is desirable that the plurality of first pedestals 53 and the plurality of second pedestals 54 are metal materials having a thermal expansion coefficient comparable to that of the metal material contained in the submask M. Therefore, for example, when the submask M is a metal mask and an Invar alloy is applied, it is desirable that the Invar alloy is also applied to the plurality of first pedestals 53 and the plurality of second pedestals 54. When the submask M is a hybrid mask and a laminated film of nickel and polyimide is applied, it is desirable that nickel is also applied to the plurality of first pedestals 53 and the plurality of second pedestals 54.

The plurality of first pedestals 53 are provided along the P direction between the plurality of support holes 52 and the space in the frame of one of the two short sides of the frame main body 51. The plurality of second pedestals 54 are provided on the other of the two short sides of the frame body 51 along the P direction. The plurality of first pedestals 53 and the plurality of second pedestals 54 are provided in the same number, for example, and one set of the first pedestal 53 and one second pedestal 54 is a space FS in the frame of the vapor deposition mask frame 50. Is provided so as to face each other along the Q direction.

The set of the first pedestal 53 and the second pedestal 54 is joined to both ends of one submask M. Specifically, the first pedestal 53 and the first end of the corresponding submask M are welded at the plurality of first joints 55, and the second pedestal 54 and the corresponding submask M are welded at the plurality of second joints 56. Is welded to the second end of the. As a result, the thin-film deposition mask frame 50 and the sub-mask M are joined.

The first pedestal 53 and the second pedestal 54 may be tapped at the first joint portion 55 and the second joint portion 56, respectively. Thereby, before joining the thin-film deposition mask frame 50 and the sub-mask M, the thin-film deposition mask frame 50 and the sub-mask M can be easily fixed by screw tightening.

Further, the first pedestal 53 and the second pedestal 54 may have pin holes formed in the first joint portion 55 and the second joint portion 56, respectively. Thereby, when joining the thin-film deposition mask frame 50 and the sub-mask M, the joining position can be appropriately determined.

Further, the thin-film deposition mask frame 50 and the sub-mask M may be fixed by an adhesive. As a result, the thin-film deposition mask frame 50 and the submask M can be joined more firmly.

1.2 Operation Next, the operation using the thin-film deposition mask with a frame according to the embodiment will be described.

1.2.1 Thin-film deposition process A thin-film deposition process using a frame-attached thin-film deposition mask according to an embodiment will be described.

FIG. 4 is a schematic view showing a thin-film deposition process using a thin-film deposition mask with a frame according to the embodiment. In FIG. 4, a thin-film deposition mask 10 with a frame (a thin-film deposition mask 30 and a thin-film deposition mask frame 50 joined to the thin-film deposition mask 30) and a substrate to be vapor-deposited (not shown) are installed in the thin-film deposition chamber 6. The state is shown.

As shown in FIG. 4, a thin-film deposition source 70 is provided in the thin-film deposition chamber 6. The thin-film deposition source 70 has a function of releasing the vapor 71 of the vapor-deposited substance by heating and evaporating the vapor-deposited substance contained therein. The thin-film deposition source 70, the thin-film deposition mask frame 50, the thin-film deposition mask 30, and the substrate to be vapor-deposited are arranged in this order along the direction in which the vapor 71 of the vapor-deposited substance is discharged from the thin-film deposition source 70.

In the thin-film deposition mask 10 with a frame, the opening 31 is in the direction in which the emission range of the vapor-deposited material vapor 71 from the vapor-film deposition source 70 is the strongest (for example, along the central axis of a nozzle (for example, not shown) provided in the thin-film deposition source 70). It is installed so that it can be perpendicular to the direction). That is, the thickness direction (R direction) of the thin-film vapor deposition mask 10 with a frame can coincide with the discharge direction of the vapor 71 of the vapor-deposited substance. As a result, the vapor-deposited substance that has passed through the opening 31 is vapor-deposited on the substrate to be vapor-deposited.

As described above, the thin-film mask frame 50 is supported by using the support holes 52. In this case, gravity acts along the direction parallel to the long side of the frame body 51 (−Q direction).

The thin-film deposition source 70 discharges the vapor of the vapor-deposited substance 71 toward the substrate to be vapor-deposited, for example, while translating along the direction of arrow A in FIG. 4 (that is, the ± Q direction). As a result, even when the size of the substrate to be vapor-deposited is large, the vapor-deposited substance can be vapor-deposited on the entire surface of the substrate to be vapor-deposited without moving the substrate to be vapor-deposited and the vapor-deposited mask 10 with a frame.

When the vapor deposition process in a certain vapor deposition chamber 6 (for example, the vapor deposition chamber 6A) is completed, the transfer robot 7 transfers the substrate to be vapor-deposited to the next vapor deposition chamber 6 (for example, the thin-film deposition chamber 6B). Then, the thin-film deposition apparatus 1 executes a further vapor deposition process in the next thin-film deposition chamber 6.

By operating as described above, the thin-film deposition process on the substrate to be vapor-deposited is completed.

1.2.2 Cleaning process Next, the cleaning process for the thin-film deposition mask frame according to the embodiment will be described.

For example, when the vapor deposition process in a certain vapor deposition chamber 6 exceeds a predetermined number of times, the transfer robot 7 conveys the thin-film vapor deposition mask 10 with a frame installed in the vapor deposition chamber 6 to the mask stock chamber 5. After the replacement step from the vacuum environment to the atmospheric pressure environment is performed in the mask stock chamber 5, the thin-film vapor deposition mask 10 with a frame is conveyed to the cleaning chamber 8. Then, in the cleaning chamber 8, the cleaning process of the thin-film deposition mask 10 with a frame is executed.

Specifically, for example, the thin-film deposition mask 10 with a frame is put into a cleaning tank (not shown) filled with an organic solvent in the cleaning chamber 8. Organic solvents include, for example, acetone or dichloromethane. Thereby, the vapor-deposited substance (organic material) adhering to the thin-film deposition mask 30 and the thin-film deposition mask frame 50 can be removed in the thin-film deposition process.

With the above, the cleaning process is completed. After the cleaning process is completed, the thin-film vapor deposition mask 10 with a frame is conveyed to the mask stock chamber 5. After the replacement step from the atmospheric pressure environment to the vacuum environment is performed in the mask stock chamber 5, the thin-film deposition mask 10 with a frame is installed in the vapor deposition chamber 6. As a result, the thin-film deposition mask 10 with a frame can be used again in the subsequent thin-film deposition process.

1.3 Effect of the present embodiment 1.3.1 Suppression of outgas According to the present embodiment, the frame main body 51 of the frame 50 for the vapor deposition mask is made of a reinforcing material and a base material, which are both inorganic solid materials. Formed from the containing composite material. As a result, it is possible to suppress the generation of outgas from the thin-film deposition mask frame 50 in a vacuum environment, and it is possible to prevent the substrate to be vapor-deposited from being contaminated by the outgas in the vapor deposition process.

Supplementally, when the frame body is made of a composite material containing a resin (for example, CFRP), the generation of outgas from the frame body can be suppressed to some extent by plating the frame body with a metal or the like. However, since the resin is still present in the frame body, for example, when a part of the plated film is peeled off by repeatedly performing the vapor deposition treatment and the cleaning treatment, the substrate to be vapor-deposited is contaminated by the generation of outgas. The problem can become apparent again.

According to this embodiment, the frame body 51 does not contain resin. Therefore, the cause of the above-mentioned problem can be removed from the frame body 51. Therefore, it is more advantageous from the viewpoint of suppressing outgassing than the frame body made of a composite material containing a resin such as CFRP.

1.3.2 Solubility resistance Since the composite material of the frame body 51 does not contain a resin, it has solubility resistance to an organic solvent. As a result, when the organic material adhering to the vapor deposition mask frame 50 is removed in the cleaning treatment, the vapor deposition mask frame 50 itself is prevented from being dissolved by the organic solvent. Therefore, deterioration of the durability of the thin-film deposition mask frame 50 due to the cleaning treatment can be suppressed, and the thin-film deposition mask frame 50 can be repeatedly used in the thin-film deposition treatment. Similar to the problem of outgas generation described above, the problem of deterioration associated with the cleaning treatment is that when CFRP is plated, a part of the plated film is peeled off by repeatedly performing the vapor deposition treatment and the cleaning treatment. In some cases it can manifest again. According to the present embodiment, since the frame body 51 does not contain a resin that can be deteriorated by an organic solvent, it is more advantageous than the frame body composed of CFRP in terms of solubility resistance in the cleaning treatment.

1.3.3 Self-weight deflection According to the present embodiment, the frame body 51 can suppress an increase in the deflection with respect to the self-weight as compared with the case where the Invar alloy is applied to the frame body.

FIG. 5 is a schematic view showing the effect of the thin-film deposition mask frame according to the present embodiment, and schematically shows the magnitude of the self-weight deflection generated in the thin-film deposition mask frame in the thin-film deposition process. Specifically, the left part of FIG. 5 (FIG. 5 (A)) shows the case where the Invar alloy is applied as a comparative example, and the right part of FIG. 5 (FIG. 5 (B)) shows the book. The case where the composite material of the embodiment is applied is shown.

As shown in FIG. 5, according to the present embodiment, it is possible to reduce both the convex side deflection on the short side and the concave side deflection on the long side of the frame body as compared with the case where the Invar alloy is applied. can.

Supplementally, as described above, during the vapor deposition process, the vapor deposition mask frame 50 is supported via the support holes 52 provided on the short side. As a result, the short side of the frame body 51 bends to the convex side, and the long side bends to the concave side. Therefore, it is desirable that the thin-film mask frame 50 has a density of a smaller value and a flexural modulus of a larger value.

Here, the C / C composite may have the characteristics of a density of about 1.6 to 2.6 [g / cm ³ ] and a flexural modulus in the Q direction of about 27 to 80 [GPa]. The MMC may have a density of about 2.4 to ³ [g / cm 3] and a flexural modulus in the Q direction of about 120 to 350 [GPa].

On the other hand, the Invar alloy may have characteristics of a density of about 8.1 [g / cm ³ ] and a flexural modulus of about 145 [GPa]. CFRP may have characteristics of a density of about 1.5 to 1.7 [g / cm ³ ] and a flexural modulus of about 9 to 170 [GPa], excluding the heat-shrinkable material described later.

That is, the MMC can reduce the deflection with respect to its own weight with respect to the Invar alloy. In particular, MMC can suppress the deflection with respect to its own weight to be equal to or less than that of CFRP by applying silicon carbide and metallic silicon as a set of a reinforcing material and a base material, for example. Further, the C / C composite can suppress the deflection with respect to its own weight to be equal to or less than that of the Invar alloy.

Therefore, according to the present embodiment, the thin-film deposition mask frame 50 can suppress the deflection with respect to its own weight as compared with the case where the Invar alloy is applied to the frame body, and suppresses the displacement of the vapor deposition mask 30 due to the deflection. be able to.

1.3.4 Joining with a thin-film deposition mask When the frame body 51 is made of C / C composite or MMC, the frame body 51 and the thin-film deposition mask 30 may not be directly welded.

According to the present embodiment, the vapor deposition mask frame 50 includes a plurality of first pedestals 53 and a plurality of second pedestals 54. The pair of the first pedestal 53 and the second pedestal 54 joined to the two opposing sides of the frame body 51 are welded to both ends of the submask M. As a result, even when the frame main body 51 is made of a material that cannot be welded to the submask M, the thin-film deposition mask frame 50 and the thin-film deposition mask 30 can be joined.

1.3.5 Thermal deformation Further, for the first pedestal 53 and the second pedestal 54, for example, Invar alloy or nickel is applied as a metal having a thermal expansion coefficient equivalent to that of the submask M. Therefore, the deviation of the thermal deformation between the submask M and the first pedestal 53 and the second pedestal 54 can be reduced, and the displacement of the submask M due to the temperature change can be suppressed.

Further, the first pedestal 53 and the second pedestal 54 have a boss shape or a block shape and are embedded in the frame main body 51. As a result, the heat capacity of the pedestal portion can be increased as compared with the case where the vapor deposition mask 30 is bonded to the metal plated on the frame body. Therefore, thermal deformation of the pedestal portion due to heat applied during welding can be suppressed as compared with the case where the vapor deposition mask 30 is bonded to the metal plated on the frame body.

Further, a plurality of sets of the first pedestal 53 and the second pedestal 54 are arranged apart from each other along the P direction. Thereby, the influence of the positional deviation generated between a certain submask M and the pair of the first pedestal 53 and the second pedestal 54 corresponding to the submask M on the adjacent submasks M can be reduced.

The coefficient of linear expansion of the Invar alloy is about 1.3 × ^10-6 [/ K], while the coefficient of linear expansion of the C / C composite is (0.2 to 1.4) × ^10-6. [/ K], and the MMC has a coefficient of linear expansion of (3 to 14) × ^10-6 [/ K]. In particular, the MMC can be designed to have a ^{coefficient of linear expansion of about 3 × 10-6} [/ K] by applying silicon carbide and metallic silicon as a set of a reinforcing material and a base material. In this way, the C / C composite and the MMC can set the coefficient of linear expansion to the same magnitude as that of the Invar alloy. Therefore, it is preferable to apply C / C composite or MMC to the frame body 51 from the viewpoint of suppressing the displacement of the submask M due to thermal deformation.

Further, the thermal conductivity of the Inver alloy is about 13 [W / mK], whereas the thermal conductivity of the C / C composite is 27 to 120 [W / mK], and that of the MMC is 27 to 120 [W / mK]. (120 to 190) [W / mK]. In particular, the C / C composite can be designed to have a thermal conductivity of about 120 [W / mK] by appropriately setting the type and direction of the carbon fiber as the reinforcing material. In this way, the C / C composite and MMC can set the thermal conductivity to a value significantly larger than that of the Invar alloy. Therefore, the heat input to the submask M (for example, the radiant heat from the vapor deposition source 70 and the heat locally generated at the welded portion during welding) is quickly transferred to other members (for example, the frame holder). can do.

In this respect, it is compared with the frame body composed of CFRP. The thermal conductivity of CFRP is 2 to 39 [W / mK] excluding the heat-shrinkable material, which is about the same as that of the Invar alloy. The reason why the heat-shrinkable material is excluded is that the material is deformed in the direction opposite to that of the submask M due to heat, so that the positional deviation becomes large, which is not preferable. As a result, for example, the heat locally generated at the welded portion during welding between the submask M and the first pedestal 53 and the second pedestal 54 is generated on the frame body made of CFRP by C / C composite. Or, it is harder to transmit than the frame body 51 composed of MMC. Therefore, when the frame body is constructed of CFRP, heat tends to be trapped in the welded portion, and as a result, thermal deformation is likely to occur. On the other hand, according to the present embodiment, the frame body 51 made of C / C composite or MMC can have a thermal conductivity that is an order of magnitude higher than that of CFRP. Therefore, applying C / C composite or MMC to the frame body 51 is more advantageous than CFRP from the viewpoint of suppressing the displacement of the submask M due to thermal deformation.

2. Modification Example In the above-described embodiment, the case where the frame body 51 is integrally molded has been described, but the present invention is not limited to this. For example, the frame body 51 may be formed by combining a plurality of frame materials. In the following description, the description of the configuration and operation equivalent to the embodiment will be omitted, and the configuration and operation different from the embodiment will be mainly described.

FIG. 6 is a plan view and a side view showing a configuration of a thin-film deposition mask with a frame according to a modified example. FIG. 6 corresponds to FIG. 2 in the embodiment.

As shown in FIG. 6, the frame body 51 of the thin-film mask frame 50A includes a plurality of frame materials 51a, 51b, 51c, and 51d, and a plurality of plates 57 (57a and 57b), 58 (58a and 58b), 59. (59a and 59b), and 60 (60a and 60b), and a plurality of screws 61 (61a, 61b, 61c, and 61d).

The frame materials 51a to 51d are formed of a composite material containing a reinforcing material containing carbon fibers and a base material containing an inorganic solid material. As a material constituting the composite material, a material equivalent to that of the frame body 51 in the first embodiment can be applied.

The plates 57-60 and the screws 61 include a material (eg, Invar alloy or MMC) having a higher flexural modulus than the C / C composite when the C / C composite is applied to the frame materials 51a to 51d. Further, the plates 57 to 60 and the screws 61 include a material (for example, MMC) having a flexural modulus equal to or higher than that of the MMC when the MMC is applied to the frame materials 51a to 51d.

The frame materials 51a and 51b correspond to the long side portions of the frame main body 51, and the frame materials 51c and 51d correspond to the short side portions of the frame main body 51. The joint portions of the frame members 51a and 51c are sandwiched by common plates 57a and 57b and fixed to each other by a plurality of screws 61a. Similarly, the respective joint portions of the frame members 51a and 51d are sandwiched by common plates 58a and 58b and fixed to each other by a plurality of screws 61b. Each joint portion of the frame members 51b and 51c is sandwiched by common plates 59a and 59b and fixed to each other by a plurality of screws 61c. The joint portions of the frame members 51b and 51d are sandwiched by common plates 60a and 60b and fixed to each other by a plurality of screws 61d.

With the above configuration, the frame main body 51 is not integrally molded, but the divided frame materials 51a to 51d can be assembled. As a result, even when the size of the frame main body 51 is increased, the production of the composite material can be facilitated. Specifically, for example, even when the size limitation of the firing furnace used for manufacturing the composite material exceeds the size of the frame main body 51, the frame main body 51 can be manufactured at a lower cost.

Further, the plates 57 to 60 connect the frame materials 51a to 51d at the four corners of the rectangular frame body 51. As a result, the central part of the rectangular side, which is greatly affected by its own weight deflection, uses a low-density composite material, while the rectangular corner, which is less affected by its own weight deflection, has a high density but an excellent flexural modulus. Materials can be used. Therefore, the amount of deformation of the vapor deposition mask frame 50 can be made smaller.

3. 3. Others In addition to the above-mentioned modifications, various modifications can be made to the above-described embodiment.

For example, in the above-described embodiment, the case where the frame main body 51 is formed only of the composite material has been described, but the present invention is not limited to this. For example, the frame body 51 may be a composite material plated with metal. As a result, the specific resistance of the frame body 51 can be reduced, and the potential of the vapor deposition mask frame 50 can be made to match with other conductive members. Further, by appropriately selecting the metal to be plated, the frame body 51 can be made magnetic. Thereby, for example, by sandwiching the substrate to be vapor-deposited between the magnetic material and the frame 50 for the vapor deposition mask, the adhesion between the frame 50 for the vapor deposition mask and the substrate to be vapor-deposited can be improved.

Further, in the above-described embodiment, in the thin-film deposition process, the thin-film deposition mask frame 50 is installed so as to support its own weight through the support holes 52, and the vapor 71 of the vapor-deposited substance is installed from a direction perpendicular to the direction of gravity. The case of being released has been described, but the present invention is not limited to this. For example, the thin-film mask frame 50 may be installed so as to be supported by a holder (not shown in the PQ plane), and the vapor 71 of the vapor-deposited substance may be emitted from a direction along the direction of gravity. In this case, the thin-film mask frame 50 can suppress the distortion caused by its own weight.

Further, in the above-described embodiment, the case where the vapor deposition apparatus 1 is a single-wafer deposition apparatus including one or a plurality of cluster CTRs provided with a plurality of vapor deposition chambers 6 centered on the transfer robot 7 has been described. Not limited to. For example, the vapor deposition apparatus 1 may be an in-line type vapor deposition apparatus in which a plurality of vapor deposition chambers 6 are provided in one vacuum chamber.

The present invention is not limited to the above embodiment, and can be variously modified at the implementation stage without departing from the gist thereof. In addition, each embodiment may be carried out in combination as appropriate, and in that case, the combined effect can be obtained. Further, the above-described embodiment includes various inventions, and various inventions can be extracted by a combination selected from a plurality of disclosed constituent requirements. For example, even if some constituent requirements are deleted from all the constituent requirements shown in the embodiment, if the problem can be solved and the effect is obtained, the configuration in which the constituent requirements are deleted can be extracted as an invention.

1 ... thin-film deposition equipment, 2 ... transfer chamber, 3, 4 ... delivery room, 5 ... mask stock chamber, 6A, 6B, 6C ... vapor deposition chamber, 7 ... transfer robot, 8 ... cleaning room, 10 ... vapor deposition mask with frame, 30 ... Vapor deposition mask, 31 ... Opening, 50, 50A ... Deposition mask frame, 51 ... Frame body, 51a, 51b, 51c, 51d ... Frame material, 52 ... Support holes, 53 ... First pedestal, 54 ... Second Pedestal, 55 ... 1st joint, 56 ... 2nd joint, 57,58,59,60 ... Plate, 61 ... Screw, 70 ... Deposition source, 71 ... Steam.

Claims (9)

With a frame body configured to hold the vapor deposition mask,
The frame body is a composite material in which both the base material and the reinforcing material are made of an inorganic solid material.
Frame for vapor deposition mask. Further provided with at least one pedestal fixed to the frame body and made of a metallic material.
The frame body is configured to hold the vapor deposition mask via the at least one pedestal.
The frame for a vapor deposition mask according to claim 1. The composite material is a carbon fiber reinforced carbon composite material.
The frame for a vapor deposition mask according to claim 1 or 2. The composite material is a metal-based composite material.
The frame for a vapor deposition mask according to claim 1 or 2. The frame body has a rectangular shape and has a rectangular shape.
The at least one pedestal includes a first pedestal and a second pedestal.
The first pedestal is fixed to the rectangular first side of the frame body, and is fixed to the first side.
The second pedestal is fixed to the second side of the frame body facing the first side.
The frame for a vapor deposition mask according to claim 2. The at least one pedestal further includes a third pedestal and a fourth pedestal.
The third pedestal is fixed to the first side of the frame body apart from the first pedestal.
The fourth pedestal is fixed to the second side of the frame body apart from the second pedestal.
The frame for a vapor deposition mask according to claim 5. The frame body includes a first frame material and a second frame material.
The thin-film mask frame further includes a joint portion that connects the first frame material and the second frame material.
The joint has a flexural modulus larger than that of the first frame material and the second frame material.
The frame for a vapor deposition mask according to any one of claims 1 to 6. The vapor deposition mask frame according to any one of claims 1 to 7.
A thin-film deposition mask that is joined to the thin-film deposition mask frame and has an opening corresponding to the thin-film deposition pattern.
With,
Thin-film mask with frame. The film-deposited mask according to claim 8 is used to form the vapor deposition pattern on the substrate to be vapor-deposited.
Thin-film deposition method.

Images