CN105555991B - Film formation mask and touch panel substrate - Google Patents
Film formation mask and touch panel substrate Download PDFInfo
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- CN105555991B CN105555991B CN201480051077.XA CN201480051077A CN105555991B CN 105555991 B CN105555991 B CN 105555991B CN 201480051077 A CN201480051077 A CN 201480051077A CN 105555991 B CN105555991 B CN 105555991B
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- resin mask
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The present invention provides film formation mask and touch panel substrate.The present invention is configured to the metal mask (11) for possessing resin mask (5) and magnetic metal parts, wherein, the resin mask (5) and film forming are in the Thinfilm pattern on substrate accordingly formed with patterns of openings (4), the metal mask (11) is the interior through hole (13) for wrapping the size for stating patterns of openings (4) formed with size, and a surface side of above-mentioned resin mask (5) is arranged in a manner of setting gap (9) between above-mentioned resin mask (5).
Description
Technical field
The present invention relates to the film formation mask for forming Thinfilm pattern on substrate, more particularly to can suppress because of mask
The deformation for the mask that the difference of linear expansion coefficient between material and thin-film material triggers and improve the positional precision of Thinfilm pattern
Film formation mask and touch panel substrate.
Background technology
Conventional film formation mask is using the film formation mask that make use of flexible adhesion diaphragm, and the flexible adhesive film is to should conduct
The material that the part in non-stacking region is covered and makes to be close to substrate surface is made up of flexible membrane, makes flexible adhesive film
After piece is close to the whole surface of film forming side of base material, optionally removes and the region for forming desired accumulation horizon is entered
The flexible adhesion diaphragm of row covering, afterwards, implement to form the film formation process of accumulation horizon, finally, remove residual on substrate surface
Flexible adhesion diaphragm, so as to form film formation mask (for example, referring to patent document 1).
Patent document 1：Japanese Unexamined Patent Publication 2012-111985 publications.
But in such conventional film formation mask, mask material is, for example, the flexible resin film such as polyimides, because
This exist because the diaphragm and the linear expansion coefficient being piled up between such as nesa coating as thin-film material on diaphragm it
Difference and gauffer, the deformation such as warpage are produced on film, so as to there is the problem of positional precision of the Thinfilm pattern of film forming variation.
The content of the invention
Therefore, the problem of present invention reply is such, its object is to provide to suppress because of mask material and thin-film material
Between linear expansion coefficient the deformation of mask that is triggered of difference and improve the positional precision of Thinfilm pattern film formation mask and
Touch panel substrate.
To achieve these goals, the involved film formation mask of the first invention is configured to possess：Resin mask, itself and film forming
In the Thinfilm pattern on substrate accordingly formed with patterns of openings；And the metal mask of magnetic metal parts, its formed with
Size is the interior through hole for wrapping the size for stating patterns of openings, and above-mentioned metal mask between above-mentioned resin mask to set
The mode for putting gap is arranged at a surface side of above-mentioned resin mask.
In addition, the touch panel substrate involved by the second invention carries out spatter film forming using above-mentioned film formation mask, and saturating
Electrode formed with nesa coating on bright glass substrate.
According to the present invention, due to being provided with defined gap between resin mask and metal mask, so in film forming,
The attraction metal mask at the back side for being configured at substrate can be utilized and resin mask is close to real estate, and in film forming knot
Shu Hou, after being released from caused by magnet to the sucking action of metal mask, metal mask can be made to utilize its elastic recovery
Power separates from resin mask.Therefore, the film for being piled up in resin mask disconnects, because between the material and thin-film material of resin mask
The internal stress that is triggered of difference of linear expansion coefficient also disconnect, so as to suppress the deformation of resin mask.So Neng Gouti
Height is formed at the positional precision of the Thinfilm pattern of substrate.
Brief description of the drawings
Fig. 1 is the centerline sectional view for the embodiment for showing film formation mask involved in the present invention.
Fig. 2 is the exploded view of above-mentioned film formation mask, and (a) shows the first mask, and (b) shows the second mask.
Fig. 3 is the explanation figure of the formation for the through hole for showing above-mentioned second mask, and (a) is to have carried out wet type erosion from a surface side
Sectional view during quarter, (b) are sectional views when having carried out Wet-type etching from two sides, and (c) is to show to make in the big face of aperture area
For the sectional view of the use example of the resin mask side of above-mentioned first mask.
Fig. 4 is the sketch of a configuration example of the film formation device for being shown with the film formation mask of the present invention.
Fig. 5 is the explanation figure for showing the setting of film formation mask of the invention on by substrate for film deposition, and (a) shows to be configured at base
The situation that the sucking action of the magnetic force of the magnet at the back side of plate not yet plays, (b) show that metal mask is attracted by the magnetic force of magnet
And the state being in close contact with resin mask.
Fig. 6 is the explanation figure for the part that amplification shows Fig. 5, and (a) is Fig. 5 (a) enlarged drawing, and (b) is putting for Fig. 5 (b)
Big figure.
Fig. 7 is the explanation figure for the film forming for being shown with film formation mask involved in the present invention.
Fig. 8 be show above-mentioned film forming terminate after state explanation figure, (a) show film forming just knot after, (b) shows magnet pair
The state that the sucking action of metal mask has been released from.
Fig. 9 is the explanation figure for the part that amplification shows Fig. 8, and (a) is Fig. 8 (a) enlarged drawing, and (b) is putting for Fig. 8 (b)
Big figure.
Figure 10 is a configuration example of the touch panel substrate for being shown with film formation mask involved in the present invention and manufacturing
Top view.
Embodiment
Embodiments of the present invention are described in detail below according to accompanying drawing.Fig. 1 be show it is involved in the present invention into
The centerline sectional view of the embodiment of film mask.The film formation mask 1 is used to form Thinfilm pattern on substrate, is configured to possess
First mask 2 and the second mask 3.
Above-mentioned first mask 2 is for via patterns of openings 4, film forming to be to turn into master to cover so as to form Thinfilm pattern on substrate
The mask of mould, as shown in Fig. 2 (a), consist of diaphragm (hereinafter referred to as " resin mask 5 "), the metallic film 6 for possessing resin-made
And first framework 7.
Here, above-mentioned resin mask 5 with substrate multiple Thinfilm patterns of film forming it is corresponding, and formed with multiple shapes
The patterns of openings 4 that size and the geomery identical of the Thinfilm pattern penetrate, e.g. thickness is 10 μm~30 μm or so
The resin-made diaphragm through visible ray such as polyimides or PET (PET).In addition, in the description below
In, be to linear expansion coefficient with as by the linear expansion coefficient of the glass of substrate for film deposition approximate 3 × 10-6~5 × 10-6/ DEG C left side
The situation of right polyimides illustrates.
Specifically, for above-mentioned patterns of openings 4, by the diaphragm of polyimides to be set up in the first frame described later
In the state of the mode of frame 7 is fixed, the laser beam of shape for the patterns of openings 4 to be formed will be shaped as from above-mentioned diaphragm
The lateral polyimides of one side diaphragm irradiation, so as to form above-mentioned patterns of openings 4.In this case, can be with to be formed
The forming position of multiple patterns of openings 4 accordingly sets above-mentioned film on the transparent glass substrate formed with multiple reference marks
Piece, target is labeled as with the said reference for being through transparent polyimides and observing, irradiates above-mentioned laser beam, so as to upper
State diaphragm and form multiple patterns of openings 4.Or can also side above-mentioned laser beam is made stepwise with defined spacing set in advance
It is mobile, while forming multiple patterns of openings 4 in the face of above-mentioned diaphragm.
In addition, in the one side 5a of above-mentioned resin mask 5, and in the effective coverage formed with above-mentioned multiple patterns of openings 4
Exterior lateral area, the metallic film 6 being made up of independent multiple patterns is provided with along the peripheral part of resin mask 5.The metallic film 6
It is welded in the end face 7a of the first framework 7 described later with being spot welded, and is used to above-mentioned resin mask 5 being fixed on the first framework 7,
The metallic film 6 is, for example, the metallic film for the thickness that the metal film plating of nickel etc. is formed as to 30 μm or so.Or it can make
To be formed with special metal mask by sputtering or being deposited, can also be in the one side 5a of resin mask 5 entire surface film forming
After having metallic film, it is etched and forms the pattern of independent multiple metallic films 6.
Also, the one side 5a sides of above-mentioned resin mask 5 are provided with the first framework 7.First framework 7 has above-mentioned with erection
The state of resin mask 5 supports to resin mask 5, and the part of the metallic film 6 of resin mask 5 is welded in one with being spot welded
End face 7a.In addition, the first framework 7 is, for example, the magnetic metal parts such as invar or invar alloy, there is size to be stated for interior wrap
The opening 8 of the size of multiple patterns of openings 4 of resin mask 5, profile is in the roughly equal size of profile with above-mentioned resin mask 5
Frame-shaped, and such as thickness is 30mm~50mm or so.In addition, in Fig. 2 (b), reference 10 is to be used to cover first
Mould 2 is fixed on the screwed hole of the second mask 3.
It is pre-determined to be set between resin mask 5 in the one side 5a sides of the resin mask 5 of above-mentioned first mask 2
The mode in defined gap 9 be provided with the second mask 3.Second mask 3 is used to prevent thin-film material in above-mentioned resin mask 5
Accumulation causes resin mask 5 to be deformed because of the difference of the linear expansion coefficient between resin mask 5 and thin-film material, second mask 3
As sub- mask, it is configured to possess the framework 12 of metal mask 11 and second as shown in Fig. 2 (b).
Here, above-mentioned metal mask 11 is the through hole for the size of interior bag at least one opening pattern 4 formed with size
13, such as thickness be 30 μm~50 μm or so of magnetic metal parts, profile is to be contained in the opening 8 of above-mentioned first framework 7
Interior size, and set in a manner of being provided with above-mentioned gap 9 relative to above-mentioned resin mask 5.The gap 9 be preferably set to as
Lower size：If being arranged at the magneticaction of the magnet at the back side of substrate in metal mask 11, metal mask 11 can be attracted to make
It is close to resin mask 5, if the effect of the magnetic force of magnet is removed, its elastic recovering force can be utilized to make metal mask 11
Separated from resin mask 5, such as the gap 9 is 300 μm or so.In addition, the size of above-mentioned through hole 13 can also be that interior bag is more
The size of individual patterns of openings 4, but in order to reduce the stacked area of the thin-film material on resin mask 5, and suppress because of mask material
The deformation for the resin mask 5 that the difference of linear expansion coefficient between material and thin-film material is triggered, the size of through hole 13 are more excellent
Choosing is set as the size of one patterns of openings 4 of interior bag.
Specifically, above-mentioned through hole 13 can be as illustrated in fig. 3 using photoresistive mask 14 to the thin of magnetic metal parts
Plate carries out Wet-type etching and formed.In this case, in Wet-type etching, magnetic metal parts are applied in isotropic etching,
If being therefore only etched as shown in the Fig. 3 (a) from a surface side, through hole 13 is formed as its aperture area and covered from against corrosion
The formation surface side of mould 14 narrows towards another surface side.If in addition, from two surface sides to magnetic metal parts as shown in the Fig. 3 (b)
It is etched, then through hole 13 is formed as the aperture area of two surface sides more than inside.Therefore, in order to suppress the film material in film forming
Material is attached to the side wall of through hole 13, and after film forming, metal mask 11 is easily separated from resin mask 5, metal is covered
Mould 11 can make the big surface side of the aperture area of through hole 13 relative with resin mask 5 as shown in the Fig. 3 (c).In addition, at this
In embodiment, following situation is illustrated：Being blocked to suppress the edge of through hole 13 as film forming, and by through hole
The small surface side of 13 aperture area is as the side of resin mask 5.Wherein, in the case of spatter film forming, compared with evaporation, grain is sputtered
Unrolling for son is more, therefore even if as Fig. 3 (c) is shown using the big surface side of the aperture area of through hole 13 as the side of resin mask 5,
The edge of through hole 13 is also small on being influenceed caused by film forming.
In the side opposite with the above-mentioned side of resin mask 5 of above-mentioned metal mask 11, the second framework 12 is provided with.This second
Framework 12 is supported with setting up the state for having above-mentioned metal mask 11 to metal mask 11, as shown in Fig. 2 (b), metal mask
11 peripheral part is welded in end face 12a with being spot welded.In addition, the second framework 12 is, for example, the magnetic such as invar or invar alloy
Metal parts, there is opening 15 of the size for the interior size for wrapping the multiple through holes 13 for stating metal mask 11, profile is in receiving
In the frame-shaped of the size in the opening 8 of above-mentioned first framework 7, and such as thickness is 30mm~50mm or so.Also, above-mentioned
The other end 12b sides of second framework 12 set the flange 16 of the oriented side stretching opposite with the above-mentioned side of opening 15, and above-mentioned the
The other end 7b of one framework 7 is detachably fixed on the flange 16 by screw element 17 (reference picture 1).In this case,
In the state of the first framework 7 is fixed on the above-mentioned flange 16 of the second framework 12, first is determined in a manner of producing above-mentioned gap 9
The respective thickness of framework 7, the second framework 12 and flange 16.In addition, in Fig. 2 (b), reference 18 is for for screw element
The hole of 17 inserts.
Next, the film forming for having used the film formation mask 1 formed like this is illustrated.In addition, in following explanation, it is right
Film formation device is that the situation of sputter equipment as shown in Figure 4 illustrates.
First, fixed by screw element 17 and assemble the first framework 7 of the first mask 2 and the second framework of the second mask 3
12, so as to prepare film formation mask 1.
Next, located at sputtering in a manner of the first mask 2 is by substrate for film deposition (hereinafter referred to as " substrate 22 ") side
Mask holder 20 in the vacuum chamber 19 of device installs film formation mask 1.In addition, it is being configured to being arranged at substrate branch
The target support 23 that the face of the substrate 22 of frame 21 abreast moves back and forth along arrow A, B directions, is provided with the example as filmogen
Such as target 24 of columned tin indium oxide (hereinafter referred to as " ITO (Indium Tin Oxide) "), and make the cylinder axis of the target 24
Intersect relative to above-mentioned moving direction.
If the installation of film formation mask 1 terminates, in the state of closing gas and importing valve 25, dump valve 26 is opened, very
Air in plenum chamber 19 is discharged, and is vacuumized until as pre-determined defined vacuum.
If the vacuum in vacuum chamber 19 reaches defined value, it is separated with gate valve 27, and is illustrated using omitting
Substrate loader structure by the substrate 22 being made up of clear glass from remain roughly the same vacuum omission diagram before
Room (in Fig. 4, inboard is arranged in a manner of being abutted with vacuum chamber 19.) carry out, and substrate 22 is arranged at substrate holder
21.Afterwards, aforesaid substrate loader mechanism keeps out of the way above-mentioned cup, and gate valve 27 is closed.
Next, mask holder 20 moves along the arrow C directions in Fig. 4, and film formation mask 1 is arranged on substrate 22.
Specifically, as shown in Fig. 5 (a), the resin mask 5 of the first mask 2 is arranged in the film forming face of substrate 22.Now, such as Fig. 6
(a) shown in, defined gap 9 is ensure that between resin mask 5 and metal mask 11.Afterwards, as shown in Fig. 5 (b), it is built in
The magnetic force of the magnet 28 of substrate holder 21 plays a role, and is attracted so as to the metal mask 11 of the second mask 3, the metal mask 11
Elastic deflection and press pressurizing resin mask 5, so as to which resin mask 5 is closely fixed on the film forming face of substrate 22.Meanwhile such as Fig. 6 (b)
Shown, metal mask 11 is close to the surface of resin mask 5.
Then, open gas to import valve 25 and adjust dump valve 26, it is lazy that argon (Ar) gas etc. is imported into vacuum chamber 19
Property gas until reach pre-determined setting.
If the air pressure in vacuum chamber 19 reaches above-mentioned setting, high voltage is assigned to target support 23, and such as Fig. 7 institutes
Show, plasma 29 is generated between target 24 and substrate 22.Moreover, make its edge when making target 24 be rotated centered on its cylinder axis
Arrow A, B directions shown in Fig. 7 are moved back and forth to perform sputtering.In addition, specifically, the timing before formal sputtering starts
Between (pre-sputtering time), between target 24 and substrate 22 inserted with omit diagram gate, prevent sputtering particle be attached to substrate
22。
The sputtering of pre-determined stipulated time is performed, if accumulating certain thickness ITO conducting films on substrate 22, on
Closing gate is stated, sputtering terminates.Moreover, the high-tension imparting carried out relative to target support 23 is released from, so as to such as Fig. 8 (a)
Shown, the generation of plasma 29 stops.Now, as shown in Fig. 9 (a), ITO conducting films 30 are piled up in the base in patterns of openings 4
The face of plate 22, the side wall of patterns of openings 4, the peripheral part of patterns of openings 4 of resin mask 5, the side wall of through hole 13 and metal are covered
The surface of the side of target 24 of mould 11.
Next, as shown in Fig. 8 (b), if being built in suction of the magnetic force of the magnet 28 of substrate holder 21 to metal mask 11
The effect of drawing is removed, then as shown in Fig. 9 (b), metal mask 11 returns to original state using its elastic recovering force.Thus,
The ITO conducting films 30 and metal mask 11 for being piled up in resin mask 5 separate.In addition, simultaneously, metal mask 11 is to resin mask 5
The pressing force that applies of film forming face of substrate 22 be released, therefore resin mask 5 is peeled off from the film forming face of substrate 22.In this way,
The substrate 22 of transparent glass forms touch panel substrate 32, and the touch panel substrate 32 is led formed with ITO as illustrated in fig. 10
The multiple electrodes 31 (Thinfilm pattern) of electrolemma 30.
Next, making mask holder 20 be moved along the arrow D directions shown in Fig. 4, and film formation mask 1 is set to divide from substrate 22
From, and the inert gas in vacuum chamber 19 is discharged.Moreover, the gate valve being separated to vacuum chamber 19 and above-mentioned cup
27 are opened, and are taken out of touch panel substrate 32 to above-mentioned cup from vacuum chamber 19 is interior from aforesaid substrate loader mechanism, separately
On the one hand, new substrate 22 is moved into from above-mentioned cup, and is positioned in substrate holder 21.
Below, it is same as described above, film forming is performed on new substrate 22, forms new touch panel substrate 32.It is moreover, every
When the film forming to substrate 22 terminates, metal mask 11 just separates from resin mask 5, therefore the ITO for being piled up in resin mask 5 is conductive
Film 30 separates from metal mask 11 every time.Therefore, the ITO conducting films 30 for being piled up in resin mask 5 are only the week of patterns of openings 4
Edge, it is separated in adjacent patterns of openings 4, disconnected so as to the shrinkage stress of ITO conducting films 30, so as to the change of resin mask 5
Shape is suppressed.So, it is possible to increase the positional precision for the electrode 31 being made up of ITO conducting films 30.In addition, simultaneously, because resin
The deformation of mask 5 is suppressed, so also having the advantages of life-span for extending resin mask 5.
In addition, in the above-described embodiment, the situation for attaching framework respectively to the first mask 2 and the second mask 3 is carried out
Explanation, but the invention is not limited in this, the first mask 2 may also be only resin mask 5, and the second mask 3 may also be only
Metal mask 11.In such a case it is possible to metal spacer is set between resin mask 5 and metal mask 11, so that two
Gap 9 is formed between person.
In addition, in the above-described embodiment, film formation device is illustrated for the situation of sputter equipment, but the present invention is simultaneously
This is not limited to, film formation device can also be evaporation coating device.
Also, in the above-described embodiment, film is illustrated for the situation of ITO conducting films 30, but the present invention is simultaneously
This is not limited to, film can also be any of the film of organic substance, the film of inorganic substances or metallic film.
The explanation of reference
1 ... film formation mask；2 ... first masks；3 ... second masks；4 ... patterns of openings；5 ... resin masks；7 ... first frames
Frame；9 ... gaps；11 ... metal masks；12 ... second frameworks；13 ... through holes；22 ... substrates；28 ... magnet；30 ... transparent lead
Electrolemma；31 ... electrodes；32 ... touch panel substrates.
Claims (6)
1. a kind of film formation mask, it is characterised in that be configured to possess：
Resin mask, it is with film forming in the Thinfilm pattern on substrate accordingly formed with patterns of openings；And
The metal mask of magnetic metal parts, it is the interior through hole for wrapping the size for stating patterns of openings formed with size, and
Above-mentioned metal mask is arranged at a surface side of above-mentioned resin mask in a manner of setting gap between above-mentioned resin mask,
Above-mentioned gap between above-mentioned resin mask and above-mentioned metal mask is set to following size：If it is arranged at aforesaid substrate
The back side magnet magneticaction in above-mentioned metal mask, then can attract above-mentioned metal mask and make above-mentioned metal mask tight
Be affixed on above-mentioned resin mask, and if the effect of the magnetic force of above-mentioned magnet be removed, its elastic recovering force can be utilized to make
Metal mask is stated to separate from above-mentioned resin mask.
2. film formation mask according to claim 1, it is characterised in that
The opening of the open area ratio inside through holes of at least the above resin mask side of the above-mentioned through hole of above-mentioned metal mask
Area is big.
3. film formation mask according to claim 1 or 2, it is characterised in that
The first framework is fixed in the peripheral part of above-mentioned resin mask, and the second framework is fixed in the peripheral part of above-mentioned metal mask,
In a manner of above-mentioned defined gap is produced between above-mentioned resin mask and above-mentioned metal mask, detachably fix
There are above-mentioned first framework and above-mentioned second framework.
4. film formation mask according to claim 1 or 2, it is characterised in that
Above-mentioned Thinfilm pattern is the nesa coating that spatter film forming forms.
5. film formation mask according to claim 3, it is characterised in that
Above-mentioned Thinfilm pattern is the nesa coating that spatter film forming forms.
A kind of 6. touch panel substrate, it is characterised in that
Film formation mask described in usage right requirement 1 carries out spatter film forming, and is led on transparent glass substrate formed with transparent
The electrode of electrolemma.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195552A JP6168944B2 (en) | 2013-09-20 | 2013-09-20 | Deposition mask |
| JP2013-195552 | 2013-09-20 | ||
| PCT/JP2014/074708 WO2015041296A1 (en) | 2013-09-20 | 2014-09-18 | Film-forming mask and touch panel substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105555991A CN105555991A (en) | 2016-05-04 |
| CN105555991B true CN105555991B (en) | 2018-03-20 |
Family
ID=52688943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480051077.XA Expired - Fee Related CN105555991B (en) | 2013-09-20 | 2014-09-18 | Film formation mask and touch panel substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6168944B2 (en) |
| KR (1) | KR20160058091A (en) |
| CN (1) | CN105555991B (en) |
| TW (1) | TW201525163A (en) |
| WO (1) | WO2015041296A1 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017163443A1 (en) | 2016-03-23 | 2017-09-28 | 鴻海精密工業股▲ふん▼有限公司 | Vapor deposition mask, vapor deposition mask production method, and organic semiconductor element production method |
| CN105714247A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Mask plate assembly for evaporation of OLED |
| CN107686962A (en) * | 2016-08-05 | 2018-02-13 | 新日铁住金化学株式会社 | Deposition mask and its manufacture method and deposition mask layered product and its manufacture method |
| JP6949507B2 (en) * | 2016-08-05 | 2021-10-13 | 日鉄ケミカル＆マテリアル株式会社 | Thin-film mask and its manufacturing method, and laminated body for thin-film mask and its manufacturing method |
| CN113463018A (en) * | 2016-09-30 | 2021-10-01 | 大日本印刷株式会社 | Frame-integrated vapor deposition mask, production body and production method therefor, and vapor deposition pattern formation method |
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| JP3539229B2 (en) * | 1997-10-15 | 2004-07-07 | 東レ株式会社 | Method for manufacturing organic electroluminescent device |
| JP4200290B2 (en) * | 2003-05-21 | 2008-12-24 | パナソニック株式会社 | Mask unit |
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| JP4375232B2 (en) * | 2005-01-06 | 2009-12-02 | セイコーエプソン株式会社 | Mask deposition method |
| JP2006199998A (en) * | 2005-01-20 | 2006-08-03 | Seiko Epson Corp | Film-forming apparatus and film-forming method |
| JP2010180438A (en) * | 2009-02-04 | 2010-08-19 | Mitsubishi Electric Corp | Mask unit, and vapor deposition apparatus having the same |
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| KR101972920B1 (en) * | 2012-01-12 | 2019-08-23 | 다이니폰 인사츠 가부시키가이샤 | Metal mask having a resin plate, vapor deposition mask, method for producing vapor deposition mask device, and method for producing organic semiconductor element |
| JP5895540B2 (en) * | 2012-01-12 | 2016-03-30 | 大日本印刷株式会社 | Evaporation mask |
| JP5958824B2 (en) * | 2012-11-15 | 2016-08-02 | 株式会社ブイ・テクノロジー | Manufacturing method of vapor deposition mask |
| JP6142194B2 (en) * | 2012-11-15 | 2017-06-07 | 株式会社ブイ・テクノロジー | Vapor deposition mask manufacturing method and vapor deposition mask |
| CN105102668B (en) * | 2013-03-26 | 2019-02-19 | 大日本印刷株式会社 | Deposition mask, deposition mask prepare body, the manufacturing method of deposition mask and the manufacturing method of organic semiconductor device |
| KR102418817B1 (en) * | 2013-04-12 | 2022-07-08 | 다이니폰 인사츠 가부시키가이샤 | Vapor deposition mask, vapor deposition mask precursor, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method |
-
2013
- 2013-09-20 JP JP2013195552A patent/JP6168944B2/en not_active Expired - Fee Related
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2014
- 2014-09-18 TW TW103132201A patent/TW201525163A/en unknown
- 2014-09-18 KR KR1020167004934A patent/KR20160058091A/en not_active Application Discontinuation
- 2014-09-18 CN CN201480051077.XA patent/CN105555991B/en not_active Expired - Fee Related
- 2014-09-18 WO PCT/JP2014/074708 patent/WO2015041296A1/en active Application Filing
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| CN105555991A (en) | 2016-05-04 |
| JP6168944B2 (en) | 2017-07-26 |
| TW201525163A (en) | 2015-07-01 |
| WO2015041296A1 (en) | 2015-03-26 |
| JP2015059262A (en) | 2015-03-30 |
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