CN101212023A - Organic top luminous device and method for producing the luminous device - Google Patents
Organic top luminous device and method for producing the luminous device Download PDFInfo
- Publication number
- CN101212023A CN101212023A CNA200610148149XA CN200610148149A CN101212023A CN 101212023 A CN101212023 A CN 101212023A CN A200610148149X A CNA200610148149X A CN A200610148149XA CN 200610148149 A CN200610148149 A CN 200610148149A CN 101212023 A CN101212023 A CN 101212023A
- Authority
- CN
- China
- Prior art keywords
- layer
- organic
- light
- organic layer
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic top light-emitting device and a manufacturing method thereof, which relates to the technical field of a light-emitting device. The organic top light-emitting device comprises a substrate, a photo etched anode, an organic layer of a light-emitting part, and a transparent cathode from bottom to top. The transparent cathode comprises a metal layer of the cathode and an organic layer of the cathode from bottom to top. The organic layer of the transparent cathode is provided with an indium tin oxide layer. The manufacturing method includes the following processes: 1) a cavity injection layer, a cavity transportation layer, a light-emitting layer, an electronic transportation layer, etc. on the substrate having a photo etched anode to form the organic layer of the light-emitting part of the device; 2) a lithium fluoride layer and an aluminum film are steam-plated on the organic layer to form the metal layer part of the cathode; 3) the organic layer of the cathode with of 8-hydroxyquinoline aluminum is steam-plated on the metal layer. The invention can increase the conductivity and light-emitting efficiency of the cathode and reduce damages on the organic layer of light-emitting under the metal layer by high energy particles and ultraviolet rays during the sputtering process, thus enhancing the performance of the light-emitting device with an organic top.
Description
Technical field
The present invention relates to the luminescent device technology, particularly relate to the technology of a kind of organic top illuminating device and manufacture method thereof.
Background technology
Organic top illuminating device is a kind of just in developing technology, so-called top is luminous to be exactly that the light that produces of organic layer is without the base plate glass outgoing, but pass negative electrode outgoing above the luminous organic layer, so negative electrode must be enough transparent, just has and compare higher light-emitting efficiency.At present the structure of negative electrode mainly is that the very thin metal level of one deck and one deck indium tin oxide layer are composited, owing to need light transmission good, metal must be done very thinly, usually in 5 nanometers to 40 nanometers.Indium tin oxide is the layer of transparent conductive layer, and its significant feature is to improve the conductivity and the light extraction efficiency of negative electrode.But indium tin oxide layer generally is to adopt the technology of sputter to make, and the particle energy that is sputtered out in the sputter procedure is higher, particle will bombard metal level and luminous organic layer, because metal level is very thin, particle is easy to pass metal level and destroys luminous organic layer, and the ultraviolet ray of sputter procedure generation simultaneously also can make the organic light-emitting device performance be destroyed.So this cathode construction is difficult to the problem of avoiding such in actual fabrication.
Summary of the invention
At the defective that exists in the above-mentioned prior art, technical problem to be solved by this invention provides a kind of conductivity and light extraction efficiency that can improve negative electrode, can weaken high energy particle in the sputter procedure and ultraviolet ray destruction, to improve the organic top illuminating device and the manufacture method thereof of top emission organic light-emitting device performance to the luminous organic layer below the metal level.
In order to solve the problems of the technologies described above, a kind of organic top illuminating device provided by the present invention, be substrate from bottom to top, anode, luminous component organic layer, transparent cathode that photoetching is good, it is characterized in that described transparent cathode is the metal level of negative electrode, the organic layer of negative electrode from bottom to top.
Further, the organic layer of described transparent cathode is provided with indium tin oxide layer.
Further, the metal level of described negative electrode is the lithium fluoride of one deck 1 nanometer and the aluminium film of 150 nanometers.
Further, the organic layer of described negative electrode is the organic layer of one deck eight hydroxyl Kui quinoline aluminium.
In order to solve the problems of the technologies described above a kind of method of making described organic top illuminating device provided by the present invention:
1) on the substrate of the good anode of photoetching, deposits the organic layer of the luminous component of structure layer devices such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer successively;
2) and then in the above evaporation one deck lithium fluoride and aluminium film constitute the metal level part of negative electrode; It is characterized in that,
3) organic layer of the negative electrode of evaporation one deck eight hydroxyl Kui quinoline aluminium on metal level.
Further, in the described step 3) at the indium tin oxide layer of this sputter one deck negative electrode above organic layer.
Utilize organic top illuminating device provided by the invention and manufacture method thereof, owing on the cathodic metal layer, increased one deck organic layer, can partly substitute the function of indium tin oxide layer, promptly improve the conductivity and the light extraction efficiency of negative electrode, in manufacture process, can the luminous organic layer below the metal level not damaged simultaneously, if sputtered indium-tin-oxide layer or other conduction inorganic matter more in the above, can weaken high energy particle in the sputter procedure and ultraviolet ray destruction, improve top emission organic light-emitting device performance the luminous organic layer below the metal level.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the invention organic top illuminating device;
Fig. 2 is the structural representation of another embodiment of the present invention organic top illuminating device.
Embodiment
Below in conjunction with description of drawings embodiments of the invention are described in further detail, but present embodiment is not limited to the present invention, every employing analog structure of the present invention, manufacture method and similar variation thereof all should be listed protection scope of the present invention in.
The present invention be directed to the shortcoming of above-mentioned cathode construction, propose a kind of structure of new negative electrode, to avoid in negative electrode manufacturing process, destroying the organic layer below the negative electrode.The present invention is that because this layer organic layer conducts electricity, it can increase the conductivity of negative electrode at the transparent organic layer of the additional one deck conduction of the metal level of negative electrode, and it also is transparent dielectric layer, also can improve the light extraction efficiency of negative electrode.The transparent organic layer role of this one deck conduction is the same substantially with indium tin oxide, but the hot evaporation process of the general employing of the manufacture craft of organic layer can not produce high energy particle and ultraviolet ray, the organic layer in manufacturing process below the destruction metal.If sputtered indium-tin-oxide layer or other conduction inorganic matter on the transparent organic layer of conduction again; can better improve device performance; because the transparent organic layer protection of one deck conduction is arranged above the cathodic metal, it can weaken the destruction to the luminous organic layer below the metal level of high energy particle and ultraviolet ray in the sputter procedure.
A kind of execution mode of the organic top illuminating device of the embodiment of the invention is: the organic layer 3 that deposits the luminous component of structure layer devices such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer on the substrate 1 of the good anode 2 of photoetching successively, and then the lithium fluoride of evaporation one deck 1 nanometer and the aluminium film of 150 nanometers in the above, constitute the metal level part 4 of negative electrode, again the organic layer 5 of the negative electrode of eight hydroxyl Kui quinoline aluminium of evaporation one deck 100 nanometers on metal level.Final devices as shown in Figure 1.
Another execution mode of the organic top illuminating device of the embodiment of the invention is: deposit hole injection layer successively on the substrate 1 of the good anode 2 of photoetching, hole transmission layer, luminescent layer, the organic layer 3 of the luminous component of structure layer devices such as electron transfer layer, and then the lithium fluoride of evaporation one deck 1 nanometer and the aluminium film of 150 nanometers in the above, constitute the metal level part 4 of negative electrode, the organic layer 5 of the negative electrode of eight hydroxyl Kui quinoline aluminium of evaporation one deck 60 nanometers on metal level again, at the indium tin oxide layer 6 of this negative electrode of sputter one deck 100 nanometers above organic layer, final devices as shown in Figure 2 again.
Claims (3)
1. anode, luminous component organic layer, transparent cathode that organic top illuminating device is substrate from bottom to top, photoetching is good is characterized in that described transparent cathode is the metal level of negative electrode, the organic layer of negative electrode from bottom to top.
2. organic top illuminating device according to claim 1 is characterized in that the metal level of described transparent cathode is provided with organic layer.
3. organic top illuminating device according to claim 1 is characterized in that the organic layer of described transparent cathode is provided with indium tin oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610148149XA CN101212023A (en) | 2006-12-28 | 2006-12-28 | Organic top luminous device and method for producing the luminous device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610148149XA CN101212023A (en) | 2006-12-28 | 2006-12-28 | Organic top luminous device and method for producing the luminous device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101212023A true CN101212023A (en) | 2008-07-02 |
Family
ID=39611807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200610148149XA Pending CN101212023A (en) | 2006-12-28 | 2006-12-28 | Organic top luminous device and method for producing the luminous device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101212023A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972112A (en) * | 2016-12-14 | 2017-07-21 | 友达光电股份有限公司 | Light emitting device |
| WO2018149103A1 (en) * | 2017-02-14 | 2018-08-23 | 京东方科技集团股份有限公司 | Organic light-emitting diode device and manufacturing method therefor, and display apparatus |
| CN109326732A (en) * | 2017-08-01 | 2019-02-12 | 上海自旭光电科技有限公司 | Organic LED structure and its manufacturing method |
-
2006
- 2006-12-28 CN CNA200610148149XA patent/CN101212023A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106972112A (en) * | 2016-12-14 | 2017-07-21 | 友达光电股份有限公司 | Light emitting device |
| CN106972112B (en) * | 2016-12-14 | 2018-11-09 | 友达光电股份有限公司 | light emitting device |
| WO2018149103A1 (en) * | 2017-02-14 | 2018-08-23 | 京东方科技集团股份有限公司 | Organic light-emitting diode device and manufacturing method therefor, and display apparatus |
| US10930893B2 (en) | 2017-02-14 | 2021-02-23 | Boe Technology Group Co., Ltd. | Organic light-emitting diode device, manufacturing method thereof, and display device |
| CN109326732A (en) * | 2017-08-01 | 2019-02-12 | 上海自旭光电科技有限公司 | Organic LED structure and its manufacturing method |
| CN109326732B (en) * | 2017-08-01 | 2024-02-13 | 拓旷(上海)光电科技有限公司 | Organic light-emitting diode structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5048026B2 (en) | Organic electroluminescence display device | |
| EP3926700A1 (en) | Oled device and manufacturing method therefor | |
| CN104037359A (en) | OLED (organic light emitting diode) cathode structure and manufacturing method thereof | |
| CN100444424C (en) | Organic light-emitting device and method of fabricating the same | |
| CN106926559B (en) | Transfer printing substrate, manufacturing method thereof and manufacturing method of OLED device | |
| US20210134900A1 (en) | Light emitting substrate and manufacturing method thereof, electronic device | |
| TW201324890A (en) | Organic light emitting device and manufacturing method thereof | |
| CN110444684A (en) | Anode plate and preparation method thereof, display panel | |
| CN106848103B (en) | O L ED substrate, manufacturing method thereof and display device | |
| CN102376895B (en) | OLED (Organic light-emitting diode) lighting substrate and manufacture method thereof | |
| CN101212023A (en) | Organic top luminous device and method for producing the luminous device | |
| GB2558109A (en) | OLED luminescent device and display device | |
| CN102610760B (en) | light emitting device | |
| WO2021139657A1 (en) | Organic electroluminescent structure and manufacturing method therefor, and display apparatus | |
| CN101483222A (en) | Cathode for organic top illuminating device and manufacturing method thereof | |
| US20140120644A1 (en) | Method for Producing Organic Light-Emitting Diode Illuminating Device | |
| CN101840998A (en) | OLED (Organic Light Emitting Diode) lighting substrate, OLED lighting device and manufacturing methods thereof | |
| TWI636602B (en) | Organic optoelectronic device structure and manufacturing method | |
| KR100847220B1 (en) | Organic light emitting device comprising surface-treated bottom electrode | |
| JP2008171993A (en) | Organic electroluminescent element, light source for optical communication, and lighting apparatus | |
| JP2011040173A (en) | Organic electroluminescent device | |
| CN103594649A (en) | Organic electroluminescent device and preparation method thereof | |
| CN107482130B (en) | Organic light-emitting panel, method for manufacturing same, and organic light-emitting device | |
| CN100495763C (en) | Organic electroluminescence display of black electrode structure and its manufacturing method | |
| CN100373655C (en) | Organic luminescent display and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080702 |