CN101483222A - Cathode for organic top illuminating device and manufacturing method thereof - Google Patents
Cathode for organic top illuminating device and manufacturing method thereof Download PDFInfo
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- CN101483222A CN101483222A CNA2008100325489A CN200810032548A CN101483222A CN 101483222 A CN101483222 A CN 101483222A CN A2008100325489 A CNA2008100325489 A CN A2008100325489A CN 200810032548 A CN200810032548 A CN 200810032548A CN 101483222 A CN101483222 A CN 101483222A
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Abstract
The invention discloses a cathode of an organic top illuminating device and a method for producing the same belonging to the electronic display device technique field and mainly solving the cathode production technical problem for preventing a damage to an illuminating organic layer. The production method comprises: steam plating a cathode metal layer on the organic illuminating layer, then thermal steam plating a layer of metal oxide containing an oxygen vacancy on the metal layer, that is in the metal steam plating process, adding a certain content oxygen to a vacuum chamber so that the steam plated metal is converted to the oxide with the oxygen vacancy. The metal of the metal oxide comprises aluminum, magnesium, argentums, zincum, gallium, calcium, titanium, vanadium, indium, tin and cuprum. The cathode production method of the invention can effectively avoid the damage to the illuminating organic layer under the metal layer.
Description
Technical field
The present invention relates to the electron display device technology, particularly relate to a kind of negative electrode manufacturing technology of organic top illuminating device.
Background technology
Organic top illuminating device is a kind of just in developing technology, so-called top is luminous to be exactly that the light that produces of organic layer is without the base plate glass outgoing, but pass negative electrode outgoing above the luminous organic layer, so negative electrode must be enough transparent, just has and compare higher light-emitting efficiency.At present the structure of negative electrode mainly is that the very thin metal level of one deck and one deck indium tin oxide layer are composited, owing to need light transmission good, metal must be done very thinly, usually in 5 nanometers to 40 nanometers.Indium tin oxide is the layer of transparent conductive layer, and its significant feature is to improve the conductivity and the light extraction efficiency of negative electrode.But indium tin oxide layer generally is to adopt the technology of sputter to make, and the particle energy that is sputtered out in the sputter procedure is higher, particle will bombard metal level and luminous organic layer, because metal level is very thin, particle is easy to pass metal level and destroys luminous organic layer, and the ultraviolet ray of sputter procedure generation simultaneously also can make the organic light-emitting device performance be destroyed.So this negative electrode is difficult to the problem of avoiding such in actual fabrication.
Summary of the invention
At the defective that exists in the above-mentioned prior art, technical problem to be solved by this invention provides a kind of negative electrode and the manufacture method thereof that can avoid organic top illuminating device that the luminous organic layer below the metal level is damaged.
In order to solve the problems of the technologies described above, the negative electrode of a kind of organic top illuminating device provided by the present invention comprises a metal level, it is characterized in that, additional one deck contains the metal oxide layer of aerobic room oxide on the metal level of negative electrode.
Further, the metal of described metal oxide comprises aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.
In order to solve the problems of the technologies described above, the manufacture method of a kind of organic top illuminating device negative electrode provided by the present invention, be included in evaporation one deck (negative electrode) metal level on the organic luminous layer, it is characterized in that, hot evaporation one deck contains the metal oxide in aerobic room on metal level then, promptly in the process of evaporation metal, add the oxygen of certain content in vacuum chamber, the metallic transition that makes evaporation is the oxide that contains the aerobic room.
Further, the metal of described metal oxide comprises aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.
Utilize the negative electrode and the manufacture method thereof of organic top illuminating device provided by the invention, make the layer of metal oxide skin(coating) owing on the cathodic metal layer, adopt the method for evaporation, this layer oxide has certain conductivity, it can increase the conductivity of negative electrode, and oxide is transparent, can improve the light extraction efficiency of negative electrode; Thereby can substitute the function of indium tin oxide layer, promptly improve the conductivity and the light extraction efficiency of negative electrode; Because this manufacturing (hot evaporation) process can not produce high energy particle and ultraviolet ray, avoided the destruction that luminous organic layer caused below the metal level.
Description of drawings
Fig. 1 is the structural representation of embodiment of the invention organic top illuminating device;
Fig. 2 is the structural representation of another embodiment of the present invention organic top illuminating device.
Embodiment
Below in conjunction with description of drawings embodiments of the invention are described in further detail, but present embodiment is not limited to the present invention, every employing analog structure of the present invention, method and similar variation thereof all should be listed protection scope of the present invention in.
As shown in Figure 1, the negative electrode of a kind of organic top illuminating device that the embodiment of the invention provided, comprise a metal level 4, it is characterized in that additional one deck contains the metal oxide layer of aerobic room oxide on the metal level of negative electrode, owing to contain the aerobic room, this layer oxide has certain conductivity, it can increase the conductivity of negative electrode, and oxide is transparent, can improve the light extraction efficiency of negative electrode.The metal of described metal oxide can be an aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.
The manufacture method of a kind of organic top illuminating device negative electrode that the embodiment of the invention provided, be included in evaporation one deck (negative electrode) metal level 4 on the organic luminous layer 3, it is characterized in that, and then hot evaporation one deck contains the metal oxide in aerobic room on metal level 4, promptly in the process of evaporation metal, add the oxygen of certain content in vacuum chamber, the metallic transition that makes evaporation is the oxide that contains the aerobic room.The metal of described metal oxide can be an aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.This manufacturing (hot evaporation) process can not produce high energy particle and ultraviolet ray, can not destroy the organic layer below the metal.
One embodiment of the present invention are: the organic layer 3 that deposits the luminous component of structure layer devices such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer on the substrate 1 of the good anode 2 of photoetching successively, and then the lithium fluoride of evaporation one deck 1 nanometer and the aluminium film of 15 nanometers in the above, constitute the metal level part 4 of negative electrode, the oxygen that in the process of evaporation of aluminum, adds 0.001 handkerchief then, aluminium is transformed into contain the aluminium oxide in aerobic room, on metal level 4, forms the aluminium oxide 5 of one deck 50 nanometers.Final devices as shown in Figure 1.
Another embodiment of the present invention is: the organic layer 3 that deposits the luminous component of structure layer devices such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer on the substrate 1 of the good anode 2 of photoetching successively, and then the lithium fluoride of evaporation one deck 1 nanometer and the aluminium film of 15 nanometers in the above, constitute the metal level part 4 of negative electrode, and then steaming zinc, adding pressure in steaming the zinc process is the oxygen of 0.005 handkerchief, zinc is transformed into contain the zinc oxide in aerobic room, on metal level 4, forms the zinc oxide 5 ' of one deck 100 nanometers.Final devices as shown in Figure 2.
Claims (4)
1, a kind of negative electrode of organic top illuminating device comprises a metal level, it is characterized in that, additional one deck contains the metal oxide layer of aerobic room oxide on the metal level of negative electrode.
2, the negative electrode of organic top illuminating device according to claim 1 is characterized in that, the metal of described metal oxide comprises aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.
3, the manufacture method of the described organic top illuminating device negative electrode of a kind of claim 1, be included in evaporation one deck (negative electrode) metal level on the organic luminous layer, it is characterized in that, hot evaporation one deck contains the metal oxide in aerobic room on metal level then, promptly in the process of evaporation metal, add oxygen in vacuum chamber, the metallic transition that makes evaporation is the oxide that contains the aerobic room.
4, the manufacture method of organic top illuminating device negative electrode according to claim 3 is characterized in that, the metal of described metal oxide comprises aluminium, magnesium, silver, zinc, gallium, calcium, titanium, vanadium, indium, tin, copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100325489A CN101483222A (en) | 2008-01-11 | 2008-01-11 | Cathode for organic top illuminating device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100325489A CN101483222A (en) | 2008-01-11 | 2008-01-11 | Cathode for organic top illuminating device and manufacturing method thereof |
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| CN101483222A true CN101483222A (en) | 2009-07-15 |
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| CNA2008100325489A Pending CN101483222A (en) | 2008-01-11 | 2008-01-11 | Cathode for organic top illuminating device and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012151744A1 (en) * | 2011-05-11 | 2012-11-15 | Linde Aktiengesellschaft | Thin film encapsulation of organic light emitting diodes |
| CN103985826A (en) * | 2014-05-30 | 2014-08-13 | 深圳市华星光电技术有限公司 | OLED substrate packaging method and OLED structure |
| CN104078617A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| CN104078608A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
-
2008
- 2008-01-11 CN CNA2008100325489A patent/CN101483222A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012151744A1 (en) * | 2011-05-11 | 2012-11-15 | Linde Aktiengesellschaft | Thin film encapsulation of organic light emitting diodes |
| US9153794B2 (en) | 2011-05-11 | 2015-10-06 | Linde Aktiengesellschaft | Thin film encapsulation of organic light emitting diodes |
| CN104078617A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| CN104078608A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode device and manufacturing method thereof |
| CN103985826A (en) * | 2014-05-30 | 2014-08-13 | 深圳市华星光电技术有限公司 | OLED substrate packaging method and OLED structure |
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Open date: 20090715 |