CN208507735U - Organic LED structure - Google Patents
Organic LED structure Download PDFInfo
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- CN208507735U CN208507735U CN201820957531.3U CN201820957531U CN208507735U CN 208507735 U CN208507735 U CN 208507735U CN 201820957531 U CN201820957531 U CN 201820957531U CN 208507735 U CN208507735 U CN 208507735U
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
This creation discloses a kind of organic LED structure comprising anode layer is set on substrate；Electric hole transport layer is set on anode layer；Electric hole transmission auxiliary layer is set in electric hole transport layer, and carries out yellow light micro-photographing process, and electric hole transmission auxiliary layer protects the surface of electric hole transport layer；An at least light-emitting blocks are set on electric hole transmission auxiliary layer, and electric hole transmission auxiliary layer, which electrically conducts, transmits interlayer in an at least light-emitting blocks and electric hole；Electron-transport auxiliary layer is set in an at least light-emitting blocks, and carries out yellow light micro-photographing process, and electron-transport auxiliary layer protects the surface of an at least light-emitting blocks；Electron transfer layer is set on electron-transport auxiliary layer, and electron-transport auxiliary layer electrically conducts in electron transfer layer between an at least light-emitting blocks；And cathode layer is set on electron transfer layer.
Description
Technical field
This creation is related to a kind of light emitting diode more particularly to a kind of organic LED structure.
Background technique
With the high speed development of electronic industry, the popularity rate of electronic product is even more higher and higher, such as computer, plate or hand
Machine etc..Above-mentioned electronic product has become the necessity of people's daily life.Organic Light Emitting Diode (OLED) is a kind of high
Coloration, high contrast, wide viewing angle, self-luminous with can Flexible Displays etc. the advantages that, be widely used.
In the manufacturing method of current Organic Light Emitting Diode, the yellow light micro-photographing process of current industrial circle the most extensively is penetrated
Technology go to make, the luminous efficiency that will cause Organic Light Emitting Diode is bad, and reason is maker light emitting diode
Material is mostly that sensitive material is made.In yellow light micro-photographing process, the solvent and etching solution (or gas) used can be direct
Sensitive material is touched, can so make the sensitive material for making light emitting diode that chemical change occur, and is possible to change
The characteristic of original material.
In the prior art, before the structure sheaf of Organic Light Emitting Diode carries out yellow light micro-photographing process, protective layer is set to
The surface of the structure sheaf of Organic Light Emitting Diode, protective layer protect the surface of the structure sheaf of Organic Light Emitting Diode, such as
This reduces influence of the yellow light micro-photographing process for structure layer surface.Wherein the thickness degree of protective layer will affect for solvent and etching
The problem of barrier property of solution (or gas), electric conductivity and translucency, if the thickness of protective layer is too thin, for solvent and erosion
The barrier property of etching solution (or gas) is poor, and structure sheaf is susceptible to damage.If the thickness of protective layer is too thick, electric hole transmission is influenced
And/or the electric conductivity of electron-transport, the translucency that Organic Light Emitting Diode externally shines also is influenced simultaneously.Therefore pass through existing skill
The practical luminous efficiency for the Organic Light Emitting Diode that the yellow light micro-photographing process of art manufactures is bad.
In addition, being likely to result in if removing manufacture Organic Light Emitting Diode using the technology except yellow light micro-photographing process
The problems such as manufacturing process of machine light emitting diode is time-consuming and step is many and diverse, Organic Light Emitting Diode manufacturing process is incomplete.
Utility model content
In view of this, this creation technical problem to be solved is that can not be solved by the prior art.The prior art is in system
The material for making machine light emitting diode is mostly that sensitive material is made, and the solvent that yellow light micro-photographing process will use and etching are molten
Liquid (or gas) meeting directly tactiosensible property material so may generate chemistry for the sensitive material of light emitting diode and become
Change, and change the characteristic of original sensitive material, in the prior art, the structure sheaf of Organic Light Emitting Diode carries out yellow light lithographic
Before processing procedure, protective layer is set to the surface of the structure sheaf of Organic Light Emitting Diode, knot of the protective layer to Organic Light Emitting Diode
The surface of structure layer is protected, and is so reduced yellow light micro-photographing process and is rung ﹐ still for the shadow of structure layer surface, protective layer will affect
The electric hole of Organic Light Emitting Diode is transmitted and/or electron-transport, and causes the luminous efficiency of Organic Light Emitting Diode bad.
To solve the above-mentioned problems, this creation provides a kind of organic LED structure comprising substrate, anode layer,
Electric hole transport layer, electric hole transmit auxiliary layer, at least a light-emitting blocks, electron transfer layer and anode layer.Anode layer is set to substrate
On；Electric hole transport layer is set on anode layer；Electric hole transmission auxiliary layer is set in electric hole transport layer, and carries out yellow light lithographic system
Journey, electric hole transmission auxiliary layer protect the surface of electric hole transport layer；An at least light-emitting blocks are set to electric hole transmission auxiliary
Layer, electric hole transmission auxiliary layer, which electrically conducts, transmits interlayer in an at least light-emitting blocks and electric hole；Electron transfer layer is set at least
One light-emitting blocks；And cathode layer is set to electron transfer layer.
According to an embodiment of this creation, above-mentioned organic LED structure further includes electron-transport auxiliary layer,
Electron-transport auxiliary layer is set to an at least light-emitting blocks and electron-transport interlayer, and carries out yellow light micro-photographing process, electron-transport
Auxiliary layer protects the surface of an at least light-emitting blocks, electron-transport auxiliary layer electrically conduct in an at least light-emitting blocks with
Electron-transport interlayer.
According to an embodiment of this creation, above-mentioned electron-transport auxiliary layer includes organic matter, metal, metallic compound
Or above-mentioned optional at least two combination.
According to an embodiment of this creation, above-mentioned organic matter is hydrocarbon and carbon containing or hydrogen organic matter, gold
Belonging to is lithium, sodium, potassium, rubidium or caesium, and metallic compound is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, rubidium fluoride RbF, lithium carbonate, carbon
Sour sodium, potassium carbonate, rubidium carbonate or cesium carbonate.
According to an embodiment of this creation, above-mentioned electric hole transmission auxiliary layer includes organic matter and metal oxide.
According to an embodiment of this creation, above-mentioned organic matter is hydrocarbon and carbon containing or hydrogen organic matter, gold
Category oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, tin indium oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, oxygen
Change silver or gold oxide.
This creation provides another organic LED structure comprising substrate, anode layer, electric hole transport layer, at least
One light-emitting blocks, electron-transport auxiliary layer, electron transfer layer and anode layer.Anode layer is set on substrate；Electric hole transport layer is set
It is placed on anode layer；At least a light-emitting blocks are set in electric hole transport layer；Electron-transport auxiliary layer is set at least one and shines
On block, and yellow light micro-photographing process is carried out, the electron-transport auxiliary layer protects the surface of an at least light-emitting blocks；Electricity
Sub- transport layer is set on the electron-transport auxiliary layer, and electron-transport auxiliary layer electrically conducts in electron transfer layer and at least one
Between light-emitting blocks；And cathode layer is set to electron transfer layer.
According to an embodiment of this creation, above-mentioned organic LED structure further includes electric hole transmission auxiliary layer,
Electric hole transmission auxiliary layer is set between electric hole transport layer and at least a light-emitting blocks, and carries out yellow light micro-photographing process, electric hole transmission
Auxiliary layer protects the surface of electric hole transport layer, and electric hole transmission auxiliary layer electrically conducts at least a light-emitting blocks and electric hole
Transmit interlayer.
According to an embodiment of this creation, above-mentioned electric hole transmission auxiliary layer includes organic matter and metal oxide.
According to an embodiment of this creation, above-mentioned organic matter is hydrocarbon and carbon containing or hydrogen organic matter, gold
Category oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, tin indium oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, oxygen
Change silver or gold oxide.
According to an embodiment of this creation, above-mentioned electron-transport auxiliary layer includes organic matter, metal, metallic compound
Or above-mentioned optional at least two combination.
According to an embodiment of this creation, above-mentioned organic matter is hydrocarbon and carbon containing or hydrogen organic matter, gold
Belonging to is lithium, sodium, potassium, rubidium or caesium, and metallic compound is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, rubidium fluoride RbF, lithium carbonate, carbon
Sour sodium, potassium carbonate, rubidium carbonate or cesium carbonate.
The shortcomings that improveing the prior art by such organic LED structure, by increasing, vapor deposition is conductive to be protected for this creation
The mode of sheath (i.e. electric hole transmission auxiliary layer and/or electron-transport auxiliary layer), and remove improvement yellow light micro-photographing process.Conductive protection
Layer can obstruct yellow light micro-photographing process will use to solvent and etching solution (or gas) go to directly contact sensitive material
The problem of (i.e. electric hole transport layer, light-emitting blocks and the electron transfer layer of Organic Light Emitting Diode).Meanwhile Organic Light Emitting Diode
After structure increases conductive protecting layer, because conductive protecting layer is conductive, the electric hole in light emitting diode construction will not be passed
Defeated and/or electron-transport efficiency of transmission causes adverse effect, therefore, conductive protecting layer shines to organic LED structure
The influence of efficiency is very small.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand this creation, constitutes a part of this creation, this wound
The exemplary embodiment and its explanation of work do not constitute the improper restriction to this creation for explaining this creation.In the accompanying drawings:
Fig. 1 is the sectional view of the organic LED structure of this creation first embodiment.
Fig. 2 is the sectional view of the organic LED structure of this creation second embodiment.
Fig. 3 is the sectional view of the organic LED structure of this creation third embodiment.
Fig. 4 is the step flow chart of the manufacturing method of the organic LED structure of this creation.
Fig. 5 A is the upper figure of another steps flow chart of the manufacturing method of the organic LED structure of this creation.
Fig. 5 B is another steps flow chart following figure of the manufacturing method of the organic LED structure of this creation.
Fig. 6 A is the step schematic diagram one of the manufacturing method of the organic LED structure of this creation.
Fig. 6 B is the step schematic diagram two of the manufacturing method of the organic LED structure of this creation.
Fig. 6 C is the step schematic diagram three of the manufacturing method of the organic LED structure of this creation.
Fig. 6 D is the step schematic diagram four of the manufacturing method of the organic LED structure of this creation.
Fig. 6 E is the step schematic diagram five of the manufacturing method of the organic LED structure of this creation.
Fig. 6 F is the step schematic diagram six of the manufacturing method of the organic LED structure of this creation.
Fig. 6 G is the step schematic diagram seven of the manufacturing method of the organic LED structure of this creation.
Fig. 6 H is the step schematic diagram eight of the manufacturing method of the organic LED structure of this creation.
Fig. 6 I is the step schematic diagram nine of the manufacturing method of the organic LED structure of this creation.
Specific embodiment
Multiple embodiments of this creation, as clearly stated, the details in many practices will be disclosed with schema below
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit this creation.Also
It is to say, in some embodiments of this creation, the details in these practices is non-essential.In addition, for the sake of simplifying schema,
Some usual structures and component will be painted in the drawings in simply illustrative mode.
Referring to Fig. 1, its schematic diagram for the organic LED structure of this creation first embodiment.As schemed
Show, present embodiment provides a kind of organic LED structure 1, in at least one layer of structure sheaf of increase in structure, this structure
Layer has the function of electrically conductive property and protection (or barrier) property simultaneously, this structure sheaf can block molten used in manufacturing process
Liquid, solvent or gas etc. are directly contacted with the sensitive material of organic LED structure, can avoid material in manufacturing
It is affected in journey, and changes original material properties, be so able to utilize yellow light micro-photographing process (photolithography
Process manufacture organic LED structure) is carried out.In present embodiment, organic LED structure 1 includes substrate
11, anode layer 13, electric hole transport layer 15, electric hole transmit auxiliary layer 17 (i.e. conductive protecting layer), at least a light-emitting blocks 19, electronics
Transport layer 21 and cathode layer 23.
From the above, anode layer 13 is set on substrate 11.Electric hole transport layer 15 is set to anode layer 13.Electric hole transmission
Auxiliary layer 17 is set in electric hole transport layer 15, and carries out yellow light micro-photographing process, and electric hole transmits auxiliary layer 17 to electric hole transport layer
It is protected on 15 surface.An at least light-emitting blocks 19 are set to electric hole transmission auxiliary layer 17, and electric hole transmits auxiliary layer 17 electrically
It is connected at least between a light-emitting blocks 19 and electric hole transport layer 15.Electron transfer layer 21 is set to an at least light-emitting blocks 19.
Cathode layer 23 is set to electron transfer layer 21.
In present embodiment, substrate 11 can be glass, silicon, macromolecule, metal or other common baseplate materials, be familiar with this
Item operator can be selected most suitable baseplate material according to actual demand, is not limited with material cited by present embodiment.
Anode layer 13 (indium tin oxide, ITO) is set on substrate 11, and anode layer 13 is electrically connected at anode, and anode layer 13 is to extremely
Few light-emitting blocks 19 provide positive charge.Electric hole transport layer 15 include electric hole implanted layer 151 (hole injection layer,
) and electric hole conducting shell 153 (hole transporting layer, HTL) HIL.Electric hole implanted layer 151 is set to anode layer 13
On, electric hole conducting shell 153 is set in electric hole implanted layer 151.At least a light-emitting blocks 19 are set to electric hole conducting shell 153.Electricity
Hole transport layer 15 is set between anode layer 13 and at least a light-emitting blocks 19.Electric hole transport layer 15 is that anode layer 13 electrically conducts
In the electric hole transmission channel of light-emitting blocks 19.Light-emitting blocks 19 include the pixel institute structure of red, green and/or blue (RGB) three kinds of colors
At, and its pattern is formed into pixel using yellow light micro-photographing process.Solution used in yellow light micro-photographing process, solvent or gas etc. are straight
It is contacted with the sensitive material of organic LED structure 1, above-mentioned processing procedure can all have an impact material, even change
Become original material properties, therefore, setting electric hole is transmitted auxiliary layer 17 (i.e. conductive protecting layer) and is set in electric hole transport layer 15, electric hole
Transmit the surface protection that auxiliary layer 17 carries out yellow light micro-photographing process as electric hole transport layer 15.
Electric hole transmission auxiliary layer 17 (i.e. conductive protecting layer) of present embodiment is set in electric hole transport layer 15, in addition to
Electric hole transmit the material of auxiliary layer 17 itself characteristic and thickness, can be used as barrier yellow light micro-photographing process used in arrive it is molten
Liquid, solvent or gas etc. are directly contacted with the sensitive material of organic LED structure 1, protect outside effect as barrier,
The material of electric hole transmission auxiliary layer 17 is the material that selection is easy transmission electric hole, and the material that electric hole transmits auxiliary layer 17 includes organic
Object and metal oxide, wherein organic matter selects hydrocarbon and carbon containing or hydrogen organic matter.The metal oxide is selected
Iron oxide, tungsten oxide, indium oxide, tin oxide, tin indium oxide, zinc oxide, titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or oxidation
The materials such as gold, above-mentioned material are conductive material.The material of electric hole transmission auxiliary layer 17 can promote electric hole transport layer 15
Electrical conductivity, that is, increase electric hole transport layer 15 electric conductivity.If the solution of yellow light micro-photographing process, solvent or gas are for electric hole
Transport layer 15 and the electric conductivity of electric hole transmission auxiliary layer 17 damage, also because first transmitting auxiliary layer 17 through electric hole
Improve electric hole transport layer 15 and electric hole and transmit the combined electric conductivity of auxiliary layer 17, the electric conductivity of such electric hole transport layer 15 compared to
The electric conductivity for not adding the electric hole transport layer 15 of electric hole transmission auxiliary layer 17 is also not much different.In addition, electric hole transmits auxiliary layer 17
Have the function of improve electric conductivity, so electric hole transmission auxiliary layer 17 the acceptable range of thickness degree it is larger, be also not likely to because
The problem of spending for thickness causes the influence of electric conductivity, therefore the thickness of the electric hole transmission auxiliary layer 17 of this creation is controlled at
Above size is preferred.The restrictive condition that electric hole transmits 17 structure of auxiliary layer is less, and processing procedure is simple, needs convenient for users to foundation
It asks and carries out manufacture use.
Furthermore electron transfer layer 21 include electronic conductive layer 211 (electron transporting layer, HTL) and
Electron injecting layer 213 (electron injection layer, EIL).Electronic conductive layer 211 is set to an at least light-emitting blocks
On 19, electron injecting layer 213 is set on electronic conductive layer 211.Anode layer 23 is set to electron injecting layer 213.Cathode layer 23
It is connected to cathode, and cathode layer 23 provides negative electrical charge to an at least light-emitting blocks 19.
Referring to Fig. 2, its schematic diagram for the organic LED structure of this creation second embodiment.As schemed
To show, the difference of present embodiment and first embodiment is, it omits electric hole and transmits auxiliary layer 17, and increase electron-transport auxiliary
Layer 25.Electron-transport auxiliary layer 25 is set between an at least light-emitting blocks 19 and electron transfer layer 21.In present embodiment, hair
Its pattern is formed pixel, solution, solvent or gas used in yellow light micro-photographing process using yellow light micro-photographing process by light block 19
Etc. the sensitive material for being directly contacted with organic LED structure 1, above-mentioned processing procedure can all be had an impact material, even
In the original material properties of change.When light-emitting blocks 19 are after the completion of manufacture, 25 (i.e. conductive protection of electron-transport auxiliary layer is set
Layer) it is set in an at least light-emitting blocks 19, and yellow light micro-photographing process is carried out, electron-transport auxiliary layer 25 is to an at least luminous zone
It is protected on the surface of block 19.
The function of the electron-transport auxiliary layer 25 of present embodiment is also similar with electric hole transmission auxiliary layer 17, and electron-transport is auxiliary
Layer 25 is helped to be set in an at least light-emitting blocks 19, in addition to the thickness (electricity of this creation of the material of electron-transport auxiliary layer 25 itself
The thickness of son transmission auxiliary layer 25 is controlled atAbove size is preferred), it can be used as institute in barrier yellow light micro-photographing process
Using to solution, solvent or gas etc. be directly contacted with the sensitive material of organic LED structure 1, it is anti-as barrier
It protects except effect, the material of electron-transport auxiliary layer 25 is the material that selection is easy transmission electronics, electron-transport auxiliary layer 25
Material includes organic matter, metal, metallic compound or above-mentioned optional at least two combination, above-mentioned optional at least two combined group
Conjunction includes: the combination of the combination of organic matter and metal, the combination of metal and metallic compound, organic matter and metallic compound or has
The combination of machine object, metal and metallic compound, wherein hydrocarbon and carbon containing or hydrogen organic matter can be selected in organic matter.Metal
Lithium, sodium, potassium, rubidium or caesium can be selected, the electron-transport of above-mentioned element is free can be low, and electronics is easy to be separated.Metal compound
Object is lithium fluoride, potassium fluoride, cesium fluoride, sodium fluoride, rubidium fluoride RbF, lithium carbonate, sodium carbonate, potassium carbonate, rubidium carbonate or cesium carbonate.Electricity
The material of son transmission auxiliary layer 25 can promote the electrical conductivity of photoinduced electron transport layer 21, be identical to electric hole transmission auxiliary layer 17
The effect of, so it will not be repeated.
Referring to Fig. 3, its schematic diagram for the organic LED structure of this creation third embodiment.As schemed
Show, present embodiment is the combined application of first embodiment and second embodiment, the organic light-emitting diodes of present embodiment
Pipe structure 1 has electric hole transmission auxiliary layer 17 and electron-transport auxiliary layer 25 simultaneously.Electric hole transmits auxiliary layer 17 and electron-transport
The locations of structures and effect of auxiliary layer 25 are all identical to described in first embodiment and second embodiment, and so it will not be repeated.
It referring to Figure 4 together, is the step flow chart of the manufacturing method of the organic LED structure of this creation.Such as
Shown in figure, in present embodiment, pass through step S100: vapor deposition organic layer is on substrate 11.Organic layer can be anode layer
13, electric hole transport layer 15, at least a light-emitting blocks 19, electron transfer layer 21 and/or cathode layer 23 structure sheaf.In step
S200: vapor deposition conductive protecting layer (electric hole transmit auxiliary layer 17 or electron-transport auxiliary layer 25) carries out yellow light on organic layer
Micro-photographing process, conductive protecting layer protect the surface of organic layer, and conductive protecting layer is that the body that is electrically conducted of organic layer (transmits
Electric hole or transmission electronics).Above description in organic LED structure 1 in every time carry out yellow light micro-photographing process before, user
It can pass through and conductive protecting layer (electric hole transmits auxiliary layer 17 or electron-transport auxiliary layer 25) is deposited as protection in structure layer surface
With the function of increasing electric conductivity.
Fig. 5 A and Fig. 5 B are please referred to, is another step stream of the manufacturing method of the organic LED structure of this creation
Cheng Shangtu and the following figure.As shown, in present embodiment be illustrated as below Fig. 5 A arrow B1 hookup 5B upper arrow B1 into
The step of row explanation, and simultaneously refering to Fig. 6 A to Fig. 6 I is the manufacturing method of the organic LED structure of this creation is shown
It is intended to one and arrives figure nine.As shown, please referring to Fig. 6 A in present embodiment, in step S1: vapor deposition anode layer 13 is in substrate
11.Plurality of pixel defining layer (PDL) 111 is arranged at intervals on substrate 11, and anode layer 13 is set on substrate 11, and position
Between multiple pixel defining layers (PDL) 111.In step S3: vapor deposition electric hole transport layer 15 is in anode layer 13.Wherein electric hole is transmitted
Layer 15 is covered on multiple pixel defining layers 111 and anode layer 13.In step S5: vapor deposition electric hole transmission auxiliary layer 17 is (i.e. conductive
Protective layer) in electric hole transport layer 15.Wherein electric hole transmission auxiliary layer 17 is covered in the surface of electric hole transport layer 15.
Fig. 6 B is please referred to, in present embodiment, starts the step of carrying out yellow light micro-photographing process, in step S7: coating
Photoresist layer 171 transmits auxiliary layer 17 in electric hole.In step S9: shielding photoresist layer 171 with light shield, be exposed.In step S11:
Develop it is exposed after photoresist layer 171, remove the photoresist layer 171 of part, and form the electric hole transmission auxiliary layer for manifesting part
17 multiple coloured light regions 173.Wherein in Fig. 6 B indicate photoresist layer 171 notch be coloured light region 173.Present embodiment is saturating
Crossing yellow light micro-photographing process disposably can open up multiple coloured light regions 173 in photoresist layer 171, be deposited in this multiple coloured light region 173
A kind of color, such mode can mass production manufacture, and yellow light micro-photographing process is for the pattern point of organic LED structure
Resolution is very high.After wherein removing removing photoresistance through development, coloured light region 173 is formed.
Fig. 6 C is please referred to, in step S13: a vapor deposition at least light-emitting blocks 19 are in multiple coloured light regions 173.Wherein at least one
Light-emitting blocks 19 are a kind of color, are covered in the surface on 171 surface of photoresist layer and electric hole transmission auxiliary layer 17.In step S15:
Electron-transport auxiliary layer 25 is deposited in an at least light-emitting blocks 19.Wherein electron-transport auxiliary layer 25 is covered in previous step institute
In an at least light-emitting blocks 19 for covering.6D is please referred to, in step S17: stripping resistance layer 171, and appear electron-transport auxiliary
Layer 25.An at least light-emitting blocks 19 are sequentially stacked on electric hole transmission auxiliary layer 17 with electron-transport auxiliary layer 25, and are located at phase
Between adjacent pixel defining layer (PDL) 111.Fig. 6 E and Fig. 6 F are please referred to, is step S7 to the S17 for repeating yellow light micro-photographing process,
To form the light-emitting blocks 19 of second of color, repeat no more.
Fig. 6 G and Fig. 6 H are please referred to, step S7 to the S17 of yellow light micro-photographing process is equally repeated, to form a kind of last face
The light-emitting blocks 1 of color.Wherein electron-transport auxiliary layer 25 is covered in the top surface in white light region 173, and electric hole transmits auxiliary layer 17
It is then covered in outermost surface, in other words, electric hole transmission auxiliary layer 17 and electron-transport auxiliary layer 25 are covered in organic light emission
The outermost surface of diode structure.
Fig. 6 I is please referred to, in step S19: vapor deposition electron transfer layer 21 is in electron-transport auxiliary layer 25.Wherein electron-transport
The more vapor deposition of layer 21 transmits auxiliary layer 17 in electric hole.In step S21: evaporation cathode layer 23 is in electron transfer layer 21 again.This embodiment party
Formula completes organic LED structure 1 (as shown in Figure 3) through above-mentioned steps.
In addition, by taking Fig. 1 structure as an example, it is another compared to the manufacturing method of Fig. 5 A and Fig. 5 B organic LED structure
One steps flow chart, difference is to omit step S15, that is, omits and electron-transport auxiliary layer 25 is not deposited, and directly passes electronics
The defeated vapor deposition of layer 21 is in an at least light-emitting blocks 19.By taking Fig. 2 structure as an example, difference is to omit step S5, that is, omits and do not steam
It plates electric hole and transmits auxiliary layer 17, and directly carry out the micro-photographing process that shines, and be coated with photoresist layer in electric hole transport layer 15.
In conclusion present embodiment provides a kind of organic LED structure and its manufacturing method, increase vapor deposition
The mode of conductive protecting layer (i.e. electric hole transmission auxiliary layer and/or electron-transport auxiliary layer), and remove improvement yellow light micro-photographing process.It removes
The thickness of conductive protecting layer material itself can be used as solution, solvent or the gas arrived used in barrier yellow light micro-photographing process
Body etc. is directly contacted with the sensitive material of organic LED structure, protects except effect as barrier, conductive protecting layer
Electric conductivity can be increased, if the solution of yellow light micro-photographing process, solvent or gas cause the electric conductivity of organic LED structure
Damage so reaches original pre- also because first having improved the electric conductivity of organic LED structure through conductive protecting layer
The electric conductivity of phase organic LED structure.In addition, conductive protecting layer has the function of improving electric conductivity, so conductive protection
The acceptable range of thickness degree of layer is larger, is also not likely to because the problem of thickness is spent causes the influence of electric conductivity, therefore, conduction is protected
The processing procedure of sheath is simple, convenient for users to implementing.
Several preferred embodiments of this creation have shown and described in above description, but as previously described, it should be understood that this wound
It is not limited to forms disclosed herein, is not to be taken as the exclusion to other embodiments, and can be used for various other
Combination, modification and environment, and can within the scope of the Creation Conception described herein, by the technology of above-mentioned introduction or related fields or
Knowledge is modified.And changes and modifications made by those skilled in the art do not depart from the spirit and scope of this creation, then it all should be
In the protection scope of this creation appended claims.
Claims (12)
1. a kind of organic LED structure, which is characterized in that the organic LED structure includes:
Substrate；
Anode layer is set on the substrate；
Electric hole transport layer is set on the anode layer；
Electric hole transmits auxiliary layer, is set in the electric hole transport layer, and carry out yellow light micro-photographing process, and the electric hole transmission is auxiliary
Layer is helped to protect the surface of the electric hole transport layer；
An at least light-emitting blocks are set on electric hole transmission auxiliary layer, the electric hole transmission auxiliary layer electrically conduct in
An at least light-emitting blocks and the electric hole transmit interlayer；
Electron transfer layer is set in an at least light-emitting blocks；And
Cathode layer is set on the electron transfer layer.
2. organic LED structure as described in claim 1, which is characterized in that further include electron-transport auxiliary layer, institute
It states electron-transport auxiliary layer and is set to an at least light-emitting blocks and the electron-transport interlayer, and carry out yellow light lithographic system
Journey, the electron-transport auxiliary layer protect the surface of an at least light-emitting blocks, the electron-transport auxiliary layer electricity
Property conducting in an at least light-emitting blocks and the electron-transport interlayer.
3. organic LED structure as claimed in claim 2, which is characterized in that the electron-transport auxiliary layer includes
Machine object, metal, metallic compound or above-mentioned optional at least two combination.
4. organic LED structure as claimed in claim 3, which is characterized in that the organic matter be hydrocarbon with
Carbon containing or hydrogen organic matter, the metal are lithium, sodium, potassium, rubidium or caesium, and the metallic compound is lithium fluoride, potassium fluoride, fluorination
Caesium, sodium fluoride, rubidium fluoride RbF, lithium carbonate, sodium carbonate, potassium carbonate, rubidium carbonate or cesium carbonate.
5. organic LED structure as claimed in claim 1 or 2, which is characterized in that the electric hole transmits auxiliary layer packet
Include organic matter and metal oxide.
6. organic LED structure as claimed in claim 5, which is characterized in that the organic matter be hydrocarbon with
Carbon containing or hydrogen organic matter, the metal oxide be iron oxide, tungsten oxide, indium oxide, tin oxide, tin indium oxide, zinc oxide,
Titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or gold oxide.
7. a kind of organic LED structure, which is characterized in that the organic LED structure includes:
Substrate；
Anode layer is set on the substrate；
Electric hole transport layer is set on the anode layer；
An at least light-emitting blocks are set in the electric hole transport layer；
Electron-transport auxiliary layer is set in an at least light-emitting blocks, and carries out yellow light micro-photographing process, and the electronics passes
Defeated auxiliary layer protects the surface of an at least light-emitting blocks；
Electron transfer layer is set on the electron-transport auxiliary layer, and the electron-transport auxiliary layer electrically conducts in described
Between electron transfer layer and an at least light-emitting blocks；And
Cathode layer is set on the electron transfer layer.
8. organic LED structure as claimed in claim 7, which is characterized in that further include electric hole transmission auxiliary layer, institute
It states electric hole transmission auxiliary layer to be set between the electric hole transport layer and an at least light-emitting blocks, and carries out yellow light lithographic system
Journey, the electric hole transmission auxiliary layer protect the surface of the electric hole transport layer, and the electric hole transmission auxiliary layer is electrically led
It passes through an at least light-emitting blocks and the electric hole transmits interlayer.
9. organic LED structure as claimed in claim 8, which is characterized in that the electric hole transmits auxiliary layer and includes
Machine object and metal oxide.
10. organic LED structure as claimed in claim 9, which is characterized in that the organic matter is hydrocarbon
With carbon containing or hydrogen organic matter, the metal oxide is iron oxide, tungsten oxide, indium oxide, tin oxide, tin indium oxide, oxidation
Zinc, titanium oxide, zirconium oxide, molybdenum oxide, silver oxide or gold oxide.
11. organic LED structure as claimed in claim 7 or 8, which is characterized in that the electron-transport auxiliary layer packet
Include organic matter, metal, metal oxide or above-mentioned optional at least two combination.
12. organic LED structure as claimed in claim 11, which is characterized in that the organic matter is hydrocarbon
With carbon containing or hydrogen organic matter, the metal is lithium, sodium, potassium, rubidium or caesium, and the metallic compound is lithium fluoride, potassium fluoride, fluorine
Change caesium, sodium fluoride, rubidium fluoride RbF, lithium carbonate, sodium carbonate, potassium carbonate, rubidium carbonate or cesium carbonate.
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| CN201810605898.3A Active CN109326730B (en) | 2017-08-01 | 2018-06-13 | Manufacturing apparatus for organic light emitting diode display |
| CN201820957531.3U Active CN208507735U (en) | 2017-08-01 | 2018-06-21 | Organic LED structure |
| CN201820957593.4U Active CN208507678U (en) | 2017-08-01 | 2018-06-21 | The image element structure of organic light emitting diode display |
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| Publication number | Publication date |
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| CN109321877A (en) | 2019-02-12 |
| CN109326732B (en) | 2024-02-13 |
| CN109326730B (en) | 2024-02-13 |
| CN109326732A (en) | 2019-02-12 |
| CN208507678U (en) | 2019-02-15 |
| CN208608230U (en) | 2019-03-15 |
| CN109326730A (en) | 2019-02-12 |
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