CN108914056A - A kind of mask plate and preparation method thereof - Google Patents
A kind of mask plate and preparation method thereof Download PDFInfo
- Publication number
- CN108914056A CN108914056A CN201810842631.6A CN201810842631A CN108914056A CN 108914056 A CN108914056 A CN 108914056A CN 201810842631 A CN201810842631 A CN 201810842631A CN 108914056 A CN108914056 A CN 108914056A
- Authority
- CN
- China
- Prior art keywords
- mask
- layer
- mask layer
- plate
- support plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 229910000679 solder Inorganic materials 0.000 claims description 13
- -1 Polyethylene terephthalate Polymers 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 5
- 229920001155 polypropylene Polymers 0.000 claims description 5
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 48
- 239000011521 glass Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005307 ferromagnetism Effects 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of mask plate and preparation method thereof, and wherein method includes：One support plate is provided；Organic film is formed on the support plate, the organic film is patterned, forms the mask layer including multiple openings；Supporting layer is formed on the mask layer；The mask layer is removed from the support plate.In the present embodiment, the mask layer that organic film is formed is removed from support plate, and belong to chemical bond interrupts disengaging, will not cause to damage to mask layer, ensure that the quality of made mask plate.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of mask plate and preparation method thereof.
Background technique
With the development of display device, the display precision of display device is also higher and higher.It is needed in display manufacturing process
Using mask plate, as vapor deposition mask plate, luminescent material is vaporized on corresponding opening in array substrate by the aperture of mask plate
Region forms display device.The image resolution requirement of display device is higher, and the pixel openings density on corresponding mask plate is just
It is higher.
Existing exposure mask board manufacturing method mainly includes：
First, hot pressing sheet metal forms sheet metal, aperture is etched on sheet metal and forms mask plate.Heat pressing process
The thickness of the sheet metal of formation is thicker, the vapor deposition shaded area of pattern of pixels when in order to reduce vapor deposition, on the sheet metal
It just needs to consider the problems of opening angle when punching, the density that this will lead to pixel openings is smaller, is unable to satisfy display at present
The requirement of the high image resolution of device.
Second, growing metallic atom using electrocasting on metallic substrates, mask layer is formed.It prepares and completes in mask layer
Afterwards, it needs to remove the mask plate of formation from metal substrate using mechanical technology, be easy to cause the damage of mask plate.
As it can be seen that existing exposure mask board manufacturing method is there are the density of pixel openings is smaller, or it is easy to damage mask plate
Technical problem.
Summary of the invention
The embodiment of the present invention provides a kind of mask plate and preparation method thereof, exists to solve existing exposure mask board manufacturing method
The density of pixel openings is smaller, or the technical issues of be easy to damage mask plate.
In order to achieve the above object, concrete scheme provided in an embodiment of the present invention is as follows：
In a first aspect, the embodiment of the invention provides a kind of mask plates, including：
Mask layer is the organic film for including multiple openings；
Supporting layer fits on the mask layer.
Optionally, the supporting layer is made of magnetic material；
The mask plate further includes：
Conductive layer is set between the mask layer and the supporting layer, includes on the conductive layer and the mask layer
The corresponding through-hole of opening.
Optionally, the value range of the thickness of the mask layer is 1 micron to 30 microns；And/or
The value range of the thickness of the conductive layer is 1 nanometer to 4 microns；And/or
The value range of the thickness of the supporting layer is 1 micron to 50 microns.
Optionally, the material that is made of the mask layer includes：Polyimides, polyethylene terephthalate, polyphenyl second
Alkene or polypropylene；
The material that is made of the supporting layer includes：Dilval, nickel cobalt (alloy), ferrocobalt or Perminvar.
Second aspect, the embodiment of the invention provides a kind of production methods of mask plate, for making as in first aspect
Described in any item mask plates, the method includes：
One support plate is provided；
Organic film is formed on the support plate, the organic film is patterned, being formed includes covering for multiple openings
Film layer；
Supporting layer is formed on the mask layer；
The mask layer is removed from the support plate.
Optionally, described to include the step of forming supporting layer on the mask layer：
Conductive layer is formed on the mask layer；
Photoresist is formed on the conductive layer, forms multiple photoetching being intervally arranged after being exposed development to photoresist
Glue retains part；
The supporting layer is formed using electrocasting on the region between adjacent photoresist reserve part point；
It removes the photoresist and retains part.
Optionally, described the step of being patterned to the organic film, includes：
By the way of laser boring or dry etching method opens up the opening on the organic film.
Optionally, described the step of being patterned to the organic film, includes：
The opening is opened up on the organic film by the way of laser boring.
Optionally, the supporting layer is latticed, and each grid corresponds at least one described opening.
Optionally, after described the step of removing the mask layer from the support plate, the method also includes：
The mask layer is fixed in solder mask frame, the mask layer is removed beyond the part of the solder mask frame.
In the embodiment of the present invention, during making mask plate, organic film is formed on support plate first, and organic thin
It is patterned to form the mask layer including multiple openings on film, is then formed on the mask layer for mask layer to be fixed to fitting
The supporting layer of structure finally again removes mask layer from support plate.In the present embodiment, due to making exposure mask using organic film
Plate, can be larger to guarantee thus without considering the problems of opening angle by the thickness control of mask plate in smaller range
Pixel openings density.Also, the mask layer for forming organic film is removed from support plate, and belong to chemical bond interrupts disengaging, no
Mask layer can be caused to damage, ensure that the quality of made mask plate.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, needed in being described below to the embodiment of the present invention
Attached drawing to be used is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention,
For those of ordinary skill in the art, without any creative labor, it can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of mask plate provided in an embodiment of the present invention；
Fig. 2 is a kind of flow diagram of the production method of mask plate provided in an embodiment of the present invention；
Fig. 3 is a kind of structural representation of mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 4 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 5 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 6 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 7 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 8 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Fig. 9 is the structural representation of another mask plate made by the production method of mask plate provided in an embodiment of the present invention
Figure；
Figure 10 is that the structure of another mask plate made by the production method of mask plate provided in an embodiment of the present invention is shown
It is intended to.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Referring to Fig. 1, a kind of structural schematic diagram of mask plate provided in an embodiment of the present invention.As shown in Figure 1, the mask plate
Mainly include：
Mask layer 120 is the organic film 121 for including multiple openings 122；
Supporting layer 130 fits on the mask layer 120.
In the present embodiment, the mask plate includes mask layer 120 and supporting layer 130, and supporting layer 130 fits in mask layer
On 120.Mask layer 120 is the organic film 121 for including multiple openings 122, and opening 122 is pixel aperture, for passing through material point
Son, deposition form pixel layer.Supporting layer 130 is set on mask layer 120, for mask layer 120 to be fixed to the mask plate institute
It needs in fixed solder mask frame.
Specifically, the material that is made of the mask layer 120 may include：Polyimides, polyethylene terephthalate,
Polystyrene or polypropylene；
The material that is made of the supporting layer 130 includes：Dilval, nickel cobalt (alloy) or Perminvar.
When the mask plate makes, mask layer 120 is first made on support plate 110, then makes support on mask layer 120 again
Layer 130, mask layer 120 and support plate 110 are finally removed, can make the mask plate again.
Mask plate provided in an embodiment of the present invention makes the mask layer of mask plate using organic material on support plate, in this way,
The mask layer that organic film is formed is removed from support plate, and belong to chemical bond interrupts disengaging, will not cause to damage to mask layer, is protected
The quality of made mask plate is demonstrate,proved.The mask layer for forming mask plate is ultrathin organic film, it is ensured that higher aperture
Density improves the fine degree of pixel aperture on mask plate.
On the basis of the above embodiments, the supporting layer 130 can be made of magnetic material；
As shown in Figure 1, the mask plate can also include：
Conductive layer 140 is set between the mask layer 120 and the supporting layer 130, includes on the conductive layer 140
Through-hole 131 corresponding with the opening 122 of the mask layer 120.
In present embodiment, for ferromagnetism solder mask frame, supporting layer 130 is set and is also made of magnetic material, increasing is passed through
If supporting layer 130 can be connect by conductive layer 140 with mask layer 120.In this way, mask plate in magnetic field environment, can pass through branch
Support layer 130 is fitted closely with solder mask frame, to avoid vapor deposition shade.
On the basis of the above embodiments, the value range of the thickness of the mask layer 120 is 1 micron to 30 microns；With/
Or
The value range of the thickness of the conductive layer 140 is 1 nanometer to 4 microns；And/or
The value range of the thickness of the supporting layer 130 is 1 micron to 50 microns.
In present embodiment, since mask layer 120 is coated and to be formed using high molecular material, conductive layer 140 is by for steaming
Plating method or sputtering method are formed, and supporting layer 130 is made of electrocasting electroforming magnetic material, therefore can effectively control mask layer
120, the thickness of conductive layer 140 and supporting layer 130 is relatively thin, and then controls the thinner thickness of entire mask plate.
It referring to fig. 2, is a kind of flow diagram of the production method of mask plate provided in an embodiment of the present invention, for making
The mask plate that above-mentioned embodiment shown in FIG. 1 provides.As indicated with 2, a kind of production method of mask plate mainly includes following step
Suddenly：
Step 201 provides a support plate；
The production method of mask plate provided in this embodiment executes the production operation of mask plate on support plate.In view of covering
The production operation of diaphragm plate may include the operations such as tiling material, punching, extruding, therefore select material hardness relatively large smooth
Plate is as support plate, and to guarantee that support plate can bear the pressure in mask plate manufacturing process, smooth on-deformable surface is again
It can guarantee the flatness and alignment degree of mask plate.
Further, the support plate is also an option that clear sheet, so as to the production of accurate measurements or control mask plate
Process.Specifically, the making material of the support plate may include simple glass, quartz glass or organic glass.The support plate
Specific size and thickness can be specifically arranged according to attributes such as the sizes of made mask plate, be not limited thereto.
Step 202 forms organic film on the support plate, is patterned to the organic film, and it includes multiple for being formed
The mask layer of opening；
After the support plate that clear hard is provided, start to make mask plate on the support plate.Firstly, as shown in figure 3, in support plate
Organic film 121 is made on 110, is used to form mask layer 120.
Organic material layer is coated on a surface of support plate 110, forms organic film 121.Selected organic material
Layer is high molecular material, such as polyimides (PolyImide, abbreviation PI), polyethylene terephthalate
(PolyEthylene Terephthalate, abbreviation PET), polystyrene (PolyStyrene, abbreviation PS), polypropylene
(PolyproPylene, abbreviation PP) etc., can preferably organic film 121 making material be polyimides so that organic thin
The excellent performances such as film 121 has high temperature resistant, resistant to chemical etching, mechanical strength is good, thermal expansion coefficient is low.
The value range of the thickness of the organic film 121 can be 1 micron to 30 microns, generally may be configured as 5 microns,
Under the premise of guaranteeing mask plate function, it is reduced as far as the thickness of mask plate, ultra-thin figure layer is made.In this way, ultra-thin
Figure layer upper opening advantageously forms the pixel aperture density of ultrahigh resolution there is no need to consider opening angle problem.
Organic film 121 is formed by way of coating high molecular material on support plate 110, can control the organic of mask plate
The thinner thickness of film 121.In this way, the composition on ultrathin organic film 121, punching, can form including multiple openings 122
Mask layer 120.Opening 122 on organic film 121 can also be known as pixel aperture, for making luminescent material molecule pass through pixel aperture
It is deposited over the specific position of TFT backplate, forms luminescent layer.
In a specific embodiment, the step of being patterned to the organic film may include：
By the way of laser boring or dry etching method opens up the opening 122 on the organic film 121.
Organic film 121 is the ultra-thin figure layer that high molecular material is formed, described organic thin by the way of laser boring
The opening 122 is opened up on film 121, can form organic figure comprising multiple openings 122.It is formed in high molecular material super
Laser boring or dry etching method punching on thin organic film 121, aperture difficulty is small, and aperture density is larger, and aperture is high-efficient.
Further, it is also possible to which the techniques such as using plasma etching drill on organic film 121, other are able to achieve in exposure mask
The embodiment of the square up-hole of film may be applicable to the present embodiment, be not construed as limiting.
Further, it when being punched on organic film 121, can choose along perpendicular to the organic film 121 and institute
It states the binding face of support plate 110 and towards the direction of the support plate 110, beats straight hole on the organic film 121.In this way, material
Molecule can be deposited on the specific position in TFT backplate, organic film thinner thickness quickly through opening, therefore can ignore and beat
The problem of 122 angular of opening during hole.In this manner it is possible to effectively improve 122 density of opening, every list can be also improved
Number of pixels in plane product, to obtain the mask plate of superelevation image resolution ratio (Pixel Per Inch, abbreviation PPI).
Step 203 forms supporting layer on the mask layer；
After forming mask layer 120 on support plate 110 according to above-mentioned steps, as shown in Figure 4, it is also necessary on mask layer 120
Supporting layer 130 is formed, so that mask layer 120 to be fixed on glass substrate, and supports made mask layer 120.
In a specific embodiment, it is typically provided with magnetic sheet above glass substrate when vapor deposition, therefore can be by institute
The making material for stating supporting layer 130 is preferably ferromagnetic material.In this way, supporting layer can with the magnetic sheet above glass substrate it
Between realize magnetic-adsorption, so as to by attaching mask to glass substrate, in this way, vapor deposition shade will not be generated.It will be with supporting layer
The mask layer 120 of 130 connections is fixed in solder mask frame, can form Organic Light Emitting Diode (Organic Light-
Emitting Diode, abbreviation OLED) it is deposited and uses mask plate.In addition, it is contemplated that ferrimagnet is not easy and high molecular material
Manufactured mask layer 120 is bound directly, as shown in figure 5, one layer of conductive layer 140 can also be laid on mask plate, is then being led
The supporting layer 130 is made in electric layer 140, to realize the connection between mask layer 120 and supporting layer 130.
For another example supporting layer 130 can also be using energy and glass if the material of the solder mask frame is certain nonmetallic materials
The material production of the auxiliary adsorption layer fitting of glass substrate or glass substrate.Other are able to achieve supporting layer 130 and support the exposure mask
Layer 120 and by mask layer 120 be fixed to glass substrate on production method can be adapted for the present embodiment, be not construed as limiting.
In the present embodiment, to guarantee that material molecule can pass through the mask plate, it is also necessary to guarantee the supporting layer 130
The aperture on the mask layer 120 is not blocked.In a specific embodiment, on support plate 110 coat high molecular material with
After forming the organic film 121, the supporting layer 130 including multiple through-holes 131 can be first made on organic film 121, so
The through-hole 131 being then passed through on the supporting layer 130 afterwards, the laser boring on the organic film 121.It is embodied in another kind
In mode, it can also first be punched on organic film 121 and form mask layer 120, then by the supporting layer including multiple through-holes 131
130 are set on the mask layer 120, or open up again after being laid with the making material of supporting layer 130 directly on mask layer 120
Through-hole 131.It is not made it is ensured that the embodiment of the passability of mask plate upper opening 122 may be applicable to the present embodiment
It limits.
Step 204 removes the mask layer from the support plate.
Mask layer 120 is made on support plate 110 according to above-mentioned steps, and supporting layer 130 is made on mask layer 120, then
Support plate 110 is removed from mask layer 120, as shown in Figure 1, can be obtained required mask plate, completes the production of mask plate
Operation.
Due to being to be keyed to realize being bonded for the two by chemistry between support plate 110 and mask layer 120, can choose
The chemical bond between mask layer 120 and support plate 110 is interrupted by modes such as laser irradiation, chemical reactions, so that mask layer 120
It is removed from support plate 110.
It in a specific embodiment, described the step of removing the mask layer 120 from the support plate 110, can
To include：
The laser of preset wavelength is selected to irradiate in the support plate 110 far from the one side of the mask layer 120, by the support plate
Chemical bond between 110 and the mask layer 120 interrupts, and the mask layer 120 is removed from the support plate 110.
Support plate 110 includes two end faces being oppositely arranged, and is equipped with the mask layer 120 on one of end face, therefore
, using the laser of preset wavelength, the mask layer can be irradiated on an end face of the support plate 110 far from the mask layer 120
120 corresponding 110 regions of support plate.Laser passes through the support plate 110, interrupts the chemical bond between support plate 110 and mask layer 120,
The removing between mask layer 120 and support plate 110 can be realized.
The production method for the mask plate that the embodiments of the present invention provide, forms organic film on support plate first, and
It is patterned to form the mask layer including multiple openings on organic film, is then formed on the mask layer for fixing mask layer
To the supporting layer of bonding structure, finally mask layer is removed from support plate again.In the present embodiment, by the exposure mask of organic film formation
Layer is removed from support plate, and belong to chemical bond interrupts disengaging, will not cause to damage to mask layer, ensure that made mask plate
Quality.The mask layer for forming mask plate is ultrathin organic film, it is ensured that higher aperture density improves picture on mask plate
The fine degree in plain hole.
On the basis of the above embodiments, described the step of forming supporting layer 130 on the mask layer 120, it can wrap
It includes：
Conductive layer 140 is formed on the mask layer 120；
On the conductive layer 140 photoresist is formed, photoresist is exposed after development and forms multiple be intervally arranged
Photoresist retains part 132；
Retain in adjacent photoresist and the supporting layer 130 is formed using electrocasting on the region between part 132；
It removes the photoresist and retains part 132.
The production method for the mask plate that present embodiment provides, is not easy to bind directly with mask layer 120 for supporting layer 130
The case where, as shown in figure 5, a conductive layer 140 can be formed first on mask layer 120, institute is then made on conductive layer 140
Supporting layer 130 is stated, to realize being stably connected between mask layer 120 and supporting layer 130.
After forming mask layer 120, be laid with conductive material on mask layer 120, form conductive layer 140, conductive layer 140 with cover
Film layer 120 is fixedly connected.The making material of conductive layer 140 can be the metal simple-substances such as nickel, molybdenum, aluminium, copper, silver, magnesium/silver, molybdenum/aluminium
Or metal alloy, or the conductive oxides such as indium tin oxide ITO, indium-zinc oxide IZO.It is made on mask layer 120
The method of conductive layer 140 may include vapour deposition method or sputtering method, and the value range of the thickness of conductive layer 140 can be 1 nanometer
To 4 microns, to control the thickness of mask plate entirety.
Supporting layer 130 is the figure layer of predetermined pattern, and the default figure of supporting layer 130 can be reserved using photoresist developing mode
Then case forms the supporting layer 130 using electrocasting injection ferrimagnet molecule.Make the ferromagnetism material of supporting layer 130
Material may include：The ferrimagnets such as dilval, nickel cobalt (alloy) or Perminvar, the thickness of made supporting layer 130
Value range can be：1 micron to 50 microns.
Specifically, a layer photoresist is first laid on conductive layer 140, then according to the predetermined pattern of the supporting layer 130,
The photoresist being laid with is exposed, obtains and can dissolve region, then by molten caused by the dissolution exposure of chemical development solution
Solve region.In this way, as shown in fig. 6, photoresist layer further includes that multiple photoresists retain part 132, multiple photoresist reserve part
132 are divided to be intervally arranged, and multiple adjacent photoresists retain the i.e. corresponding supporting layers 130 in the region being dissolved between part 132
Pattern.
Then, retain the region between part 132 in adjacent photoresist, using electrocasting, electrodeposition process in other words, gradually
Deposition materials molecule, the material molecule deposited, which combines, to become larger gradually to fill the area between adjacent photoresist reservation part 132
Domain, the area deposition material molecule that multiple photoresists retain between part 132 form multiple deposition fractions 133.
Finally, getting rid of the photoresist between deposition structure, multiple deposition structures are the supporting layer 130.
In above-mentioned steps, there is multiple through-holes 131, each through-hole between multiple deposition fractions 133 of supporting layer 130
131 can correspond at least one opening 122 on mask layer 120, to guarantee that the deposition fraction 133 of supporting layer 130 will not stop
The opening 122 of the mask layer 120, and save the making material of supporting layer 130.Photoresist exposure development combination electroforming legal system
The supporting layer 130 of work, dimensional accuracy is higher, and thickness is controllable, advanced optimizes the manufacture craft of mask plate.
It further, is the passability for guaranteeing 120 upper opening 122 of mask layer, it is as shown in Figures 4 to 6, described to lead
It is also required to correspond to the opening of mask layer 120 122 in electric layer 140, so that conductive layer 140 and supporting layer 130 are not blocked and covered
122 region of opening in film layer 120.
In specific production process, after machine film 121 is equipped on support plate 110, can first not laser boring, but first
Conductive layer 140 and supporting layer 130 are made, the through-hole 131 of supporting layer 130 is then passed through, towards the conductive layer 140 and the branch
It supports 130 laser boring of layer and forms high density opening 122, to improve the producing efficiency and quality of mask plate.
In a specific embodiment, as shown in Figure 7 and Figure 8, the supporting layer 130 can be latticed, each net
Lattice correspond at least one described opening 122.
Supporting layer 130 be it is latticed, multiple through-holes 131 of supporting layer 130 are evenly distributed, and each grid it is corresponding at least
One opening 122.As shown in fig. 7, the shape of grid can be diamond shape, each network can correspond to mask layer 120
On four opening 122 where region.As shown in figure 8, the shape of grid may be triangle, each triangular mesh can
To correspond to three on mask layer 120 122 regions of opening.
In present embodiment, due on each grid uniform fold to the opening 122 of preset quantity of supporting layer 130, this
Sample, when mask layer 120 and 130 stress of supporting layer are adjacent to, 122 institutes of whole openings that the frame of grid can be covered it
The even tension received to institute overlay area edge so that it is each opening 122 edge suffered by tension can determine as far as possible
To homogenizing, to effectively avoid mask plate, in application, 122 unbalance stress of opening cause, pixel precision is reduced and mask plate holds
The problem of easy Folding Deformation.In this way, supporting layer can play multiple action, including：Magnetic absorption effect is played, to upper layer
Pixel aperture in high polymer mask layer plays mechanics and orients homogenization, makes its stress more evenly, plays the high score on support upper layer
The effect of sub- mask layer.
The shape of grid may be the shapes such as quadrangle, circle, and 122 quantity of each corresponding opening of grid may be
1,2,3 etc., specific embodiment is determined as long as can satisfy supporting layer 130 and play the stress of the opening 122 of mask layer 120
It is not construed as limiting to homogenization with realizing high location of pixels precision, avoiding the requirements such as 122 density of fold and high opening.
On the basis of the above embodiments, described the step of removing the mask layer 120 from the support plate 110 it
Afterwards, the method can also include：
The mask layer 120 is fixed in solder mask frame, the mask layer 120 is exceeded to the part of the solder mask frame
Removal.
When mask plate is fixed on frame, be by supporting layer 130 downwards, be fixed on it on frame, and mask layer 120 to
On, it fits together with TFT backplate.
When in use, the mask layer 120 of mask plate is bonded with supporting layer 130 with solder mask frame made mask plate,
Mask layer 120 and supporting layer 130 are by fitting tension after fitting.As shown in figure 9, can be by mask layer 120 and conductive layer 140
In, the region other than cutting line all removes, or as shown in Figure 10, can also only cut exposure mask figure and 140 shape of conductive layer
Part-structure removal in region other than line.In this way, the active force of mask plate is support when mask plate fixes solder mask frame
Layer 130, passive beaer are mask layer 120, and mask layer 120 is bonded by conductive layer 140 with supporting layer 130, only by with branch
The fitting tension between layer 130 is supportted, the orientation homo-effect of 122 stress of opening of mask layer 120, Jin Erti can be effectively improved
High pixel precision, and effectively reduce mask plate fold.It, can be using laser ablation method, chemical removal side in present embodiment
The techniques such as method, are not construed as limiting.
To sum up, the production method of mask plate provided in an embodiment of the present invention, the thickness of mask layer 120 can control micro- 5
Within rice, the width of the supporting layer 130 of electrocasting production be can control within 10 microns, the image point of made mask plate
Resolution can achieve 1200 or more.The specific implementation process of mask plate provided in an embodiment of the present invention may refer to above-mentioned Fig. 1 institute
The specific implementation process for the mask plate that the embodiment shown provides, this is no longer going to repeat them.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of mask plate, which is characterized in that the mask plate includes：
Mask layer is the organic film for including multiple openings；
Supporting layer fits on the mask layer.
2. mask plate according to claim 1, which is characterized in that the supporting layer is made of magnetic material；
The mask plate further includes：
Conductive layer is set between the mask layer and the supporting layer, includes opening on the conductive layer with the mask layer
The corresponding through-hole of mouth.
3. mask plate according to claim 2, which is characterized in that the value range of the thickness of the mask layer is 1 micron
To 30 microns；And/or
The value range of the thickness of the conductive layer is 1 nanometer to 4 microns；And/or
The value range of the thickness of the supporting layer is 1 micron to 50 microns.
4. mask plate according to claim 3, which is characterized in that the material that is made of the mask layer includes：Polyimides,
Polyethylene terephthalate, polystyrene or polypropylene；
The material that is made of the supporting layer includes：Dilval, nickel cobalt (alloy), ferrocobalt or Perminvar.
5. a kind of production method of mask plate, which is characterized in that covered according to any one of claims 1 to 4 for making
Diaphragm plate, the method includes：
One support plate is provided；
Organic film is formed on the support plate, the organic film is patterned, forms the mask layer including multiple openings；
Supporting layer is formed on the mask layer；
The mask layer is removed from the support plate.
6. according to the method described in claim 5, it is characterized in that, described wrap the step of forming supporting layer on the mask layer
It includes：
Conductive layer is formed on the mask layer；
Photoresist is formed on the conductive layer, photoresist is exposed and forms multiple photoresists guarantors being intervally arranged after development
Stay part；
The supporting layer is formed using electrocasting on the region between adjacent photoresist reserve part point；
It removes the photoresist and retains part.
7. according to the method described in claim 5, it is characterized in that, the step of being patterned to organic film packet
It includes：
By the way of laser boring or dry etching method opens up the opening on the organic film.
8. according to the method described in claim 5, it is characterized in that, the step that the mask layer is removed from the support plate
Suddenly include：
The laser of preset wavelength is selected to irradiate in the support plate far from the one side of the mask layer, by the support plate and the exposure mask
Chemical bond between layer interrupts, and the mask layer is removed from the support plate.
9. according to the method described in claim 5, it is characterized in that, the supporting layer be it is latticed, each grid is corresponding at least
One opening.
10. according to the method described in claim 5, it is characterized in that, described remove the mask layer from the support plate
After step, the method also includes：
The mask layer is fixed in solder mask frame, the mask layer is removed beyond the part of the solder mask frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810842631.6A CN108914056A (en) | 2018-07-27 | 2018-07-27 | A kind of mask plate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810842631.6A CN108914056A (en) | 2018-07-27 | 2018-07-27 | A kind of mask plate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108914056A true CN108914056A (en) | 2018-11-30 |
Family
ID=64415977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810842631.6A Pending CN108914056A (en) | 2018-07-27 | 2018-07-27 | A kind of mask plate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108914056A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913805A (en) * | 2019-03-27 | 2019-06-21 | 京东方科技集团股份有限公司 | A kind of mask plate |
| WO2020189542A1 (en) * | 2019-03-15 | 2020-09-24 | 凸版印刷株式会社 | Method for manufacturing deposition mask, method for manufacturing display device, and deposition mask intermediate |
| CN113286916A (en) * | 2019-03-11 | 2021-08-20 | 寰采星科技(宁波)有限公司 | Miniature precise mask plate, manufacturing method thereof and AMOLED display device |
| CN116162893A (en) * | 2023-02-17 | 2023-05-26 | 京东方科技集团股份有限公司 | Mask plate and evaporation device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195490A (en) * | 2014-06-12 | 2014-12-10 | 丹阳市腾黄钢管镀锌有限责任公司 | Hot-dip galvanizing aftertreatment process of steel pipe |
| CN105063553A (en) * | 2015-08-22 | 2015-11-18 | 昆山允升吉光电科技有限公司 | Method for manufacturing magnetic mask plate for coating by evaporation |
| CN105154822A (en) * | 2015-08-22 | 2015-12-16 | 昆山允升吉光电科技有限公司 | Small-opening evaporation mask plate |
| CN105220110A (en) * | 2015-10-20 | 2016-01-06 | 昆山允升吉光电科技有限公司 | A kind of making method of evaporation composite magnetic mask plate |
| CN105714246A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Method for manufacturing mask plate assembly for evaporation of OLED |
| CN105714247A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Mask plate assembly for evaporation of OLED |
| CN107275522A (en) * | 2017-05-25 | 2017-10-20 | 上海天马有机发光显示技术有限公司 | A kind of preparation method of mask plate and array base palte |
| TW201800835A (en) * | 2016-03-10 | 2018-01-01 | 鴻海精密工業股份有限公司 | Vapor deposition mask, mask member for vapor deposition mask, and production method of vapor deposition mask, and method of producing organic EL display device |
| CN107574408A (en) * | 2017-08-18 | 2018-01-12 | 武汉华星光电半导体显示技术有限公司 | A kind of high polymer mask version and preparation method thereof and application |
-
2018
- 2018-07-27 CN CN201810842631.6A patent/CN108914056A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195490A (en) * | 2014-06-12 | 2014-12-10 | 丹阳市腾黄钢管镀锌有限责任公司 | Hot-dip galvanizing aftertreatment process of steel pipe |
| CN105063553A (en) * | 2015-08-22 | 2015-11-18 | 昆山允升吉光电科技有限公司 | Method for manufacturing magnetic mask plate for coating by evaporation |
| CN105154822A (en) * | 2015-08-22 | 2015-12-16 | 昆山允升吉光电科技有限公司 | Small-opening evaporation mask plate |
| CN105220110A (en) * | 2015-10-20 | 2016-01-06 | 昆山允升吉光电科技有限公司 | A kind of making method of evaporation composite magnetic mask plate |
| TW201800835A (en) * | 2016-03-10 | 2018-01-01 | 鴻海精密工業股份有限公司 | Vapor deposition mask, mask member for vapor deposition mask, and production method of vapor deposition mask, and method of producing organic EL display device |
| CN105714246A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Method for manufacturing mask plate assembly for evaporation of OLED |
| CN105714247A (en) * | 2016-04-01 | 2016-06-29 | 昆山允升吉光电科技有限公司 | Mask plate assembly for evaporation of OLED |
| CN107275522A (en) * | 2017-05-25 | 2017-10-20 | 上海天马有机发光显示技术有限公司 | A kind of preparation method of mask plate and array base palte |
| CN107574408A (en) * | 2017-08-18 | 2018-01-12 | 武汉华星光电半导体显示技术有限公司 | A kind of high polymer mask version and preparation method thereof and application |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113286916A (en) * | 2019-03-11 | 2021-08-20 | 寰采星科技(宁波)有限公司 | Miniature precise mask plate, manufacturing method thereof and AMOLED display device |
| WO2020189542A1 (en) * | 2019-03-15 | 2020-09-24 | 凸版印刷株式会社 | Method for manufacturing deposition mask, method for manufacturing display device, and deposition mask intermediate |
| JP6822615B1 (en) * | 2019-03-15 | 2021-01-27 | 凸版印刷株式会社 | Deposition mask manufacturing method, display device manufacturing method, and vapor deposition mask intermediate |
| CN113574200A (en) * | 2019-03-15 | 2021-10-29 | 凸版印刷株式会社 | Method for manufacturing vapor deposition mask, method for manufacturing display device, and intermediate for vapor deposition mask |
| CN113574200B (en) * | 2019-03-15 | 2023-08-22 | 凸版印刷株式会社 | Vapor deposition mask manufacturing method, display device manufacturing method, and vapor deposition mask intermediate |
| CN109913805A (en) * | 2019-03-27 | 2019-06-21 | 京东方科技集团股份有限公司 | A kind of mask plate |
| CN116162893A (en) * | 2023-02-17 | 2023-05-26 | 京东方科技集团股份有限公司 | Mask plate and evaporation device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108914056A (en) | A kind of mask plate and preparation method thereof | |
| TWI584059B (en) | Method for manufacturing transparent photomask, transparent photomask manufactured by the method and method for manufacturing conductive mesh pattern using the transparent photomask | |
| WO2018110253A1 (en) | Vapor deposition mask device and method for manufacturing vapor deposition mask device | |
| TW201710527A (en) | Method of making magnetic mask for vapor deposition | |
| WO2015149467A1 (en) | Oled display device and manufacturing method therefor, and display apparatus | |
| JP5274006B2 (en) | Wire grid polarizer and manufacturing method thereof | |
| CN103572206B (en) | A kind of production method of compound mask plate component | |
| US20190221741A1 (en) | Polymer mask and manufacture method of polymer mask and applied thereof | |
| TWI833876B (en) | Evaporation cover and its manufacturing method, evaporation cover device and its manufacturing method, intermediates, evaporation method, and organic EL display device manufacturing method | |
| CN101056501A (en) | Circuit board and manufacturing method thereof | |
| TW201227009A (en) | A method for manufacturing a wire grid polarizer | |
| JP2014021401A (en) | Conductive optical element, input element, and display element | |
| CN109888126A (en) | Display panel and preparation method thereof and display device with it | |
| TW201124024A (en) | Circuit board and process for fabricating the same | |
| CN108231797A (en) | A kind of conductive structure pattern and preparation method thereof, array substrate, display device | |
| WO2019179339A1 (en) | Array substrate and manufacturing method therefor, display panel and display device | |
| JP2011248324A (en) | Conductive element and method of manufacturing the same, interconnection element, information input device, display device, and electronic apparatus | |
| TW201715292A (en) | Method of making composite magnetic mask for vapor deposition | |
| CN108388077A (en) | A kind of preparation method of mask plate and preparation method thereof, array substrate | |
| JP2012216084A (en) | Information input device | |
| JP2008055665A (en) | Method for producing transferring mold and method for producing substrate with unevenness | |
| CN104779145B (en) | Mask plate and preparation method thereof | |
| TW200907878A (en) | Display panel and method for the same | |
| JP2017186617A (en) | Vapor deposition mask, and production method of vapor deposition mask | |
| JP4944367B2 (en) | Method for manufacturing mask structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181130 |