TW201715292A - Method of making composite magnetic mask for vapor deposition - Google Patents

Method of making composite magnetic mask for vapor deposition Download PDF

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TW201715292A
TW201715292A TW105126818A TW105126818A TW201715292A TW 201715292 A TW201715292 A TW 201715292A TW 105126818 A TW105126818 A TW 105126818A TW 105126818 A TW105126818 A TW 105126818A TW 201715292 A TW201715292 A TW 201715292A
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layer
mask
photoresist
metal support
vapor deposition
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TWI591424B (en
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魏志淩
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昆山允升吉光電科技有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
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Abstract

A method of making a composite magnetic mask for vapor deposition is provided, wherein an organic layer constituting the magnetic mask is very thin, and an opening of the magnetic mask is very small, so that the magnetic mask can be used for vapor deposition to form high-resolution OLED products.

Description

蒸鍍用複合磁性掩模板的製作方法Composite magnetic mask for vapor deposition

本發明屬於顯示面板行業,涉及一種應用於OLED顯示面板製作過程中的蒸鍍用掩模板,具體涉及一種蒸鍍用磁性掩模板的製作方法。The invention belongs to the display panel industry, and relates to a mask for vapor deposition used in the process of manufacturing an OLED display panel, and particularly relates to a method for fabricating a magnetic mask for vapor deposition.

由於有機電致發光二極體(Organic Light-Emitting Diode,OLED)由於同時具備自發光,不需背光源、對比度高、厚度薄、視角廣、反應速度快、可用於撓曲性面板、使用溫度範圍廣、構造及制程較簡單等優異之特性,被認為是下一代的平面顯示器新興應用技術。Organic Light-Emitting Diode (OLED) has no backlight, high contrast, thin thickness, wide viewing angle, fast response, and can be used for flexible panels and temperature. It is considered to be the next generation of flat panel display emerging application technology due to its wide range, simple structure and simple process.

OLED生產過程中最重要的一環節是將有機層按照驅動矩陣的要求沉積到基板上,形成關鍵的發光顯示單元。OLED是一種固體材料,其高精度塗覆技術的發展是制約OLED產品化的關鍵。目前完成這一工作,主要採用真空沉積或真空熱蒸發(VTE)的方法,其是將位於真空腔體內的有機物分子輕微加熱(蒸發),使得這些分子以薄膜的形式凝聚在溫度較低的基板上。在這一過程中需要與OLED發光顯示單元精度相適應的高精密掩模板作為媒介。The most important part of the OLED production process is to deposit the organic layer onto the substrate according to the requirements of the driving matrix to form a key illuminating display unit. OLED is a solid material, and the development of high-precision coating technology is the key to restricting the productization of OLED. At present, this work is mainly carried out by vacuum deposition or vacuum thermal evaporation (VTE), in which the organic molecules located in the vacuum chamber are slightly heated (evaporated), so that these molecules are condensed in the form of a thin film on a substrate having a lower temperature. on. In this process, a high-precision mask suitable for the accuracy of the OLED light-emitting display unit is required as a medium.

如圖1所示,是一種用於OLED蒸鍍用掩模板的結構示意圖,具有掩模圖案10的掩模板11固定在外框12上,其中掩模板11、外框12均為金屬材料。如圖2所示,為圖1中A-A方向的截面放大示意圖,20為掩模部,21為有機材料蒸鍍時的掩模開口,由於掩模板11一般是金屬薄片通過蝕刻技術製得,構成其掩模圖案(10)的掩模部(20)、開口(21)的尺寸會受到金屬薄片本身厚度h(h一般大於30μm)和技術的限制,從而限制最終OLED產品的解析度;換而言之,開口(21)的寬度尺寸d1很難進一步做小(目前d1小於30um的開口非常難以製作),即使能夠做到很小,較大高寬比的開口亦不能滿足高品質蒸鍍過程。另外,若製作大尺寸掩模板,其金屬型的掩模主體11會具有較大的品質,從而會導致掩模主體11板面產生下垂(即板面中間會出現下凹現象),這對精度要求較高的掩模蒸鍍過程是不利的。鑒於此,業內亟需一種能夠解決此問題的方案。As shown in FIG. 1 , it is a schematic structural view of a mask for OLED evaporation, and a mask 11 having a mask pattern 10 is fixed on the outer frame 12 , wherein the mask 11 and the outer frame 12 are made of a metal material. As shown in FIG. 2, it is an enlarged cross-sectional view in the direction of AA in FIG. 1, 20 is a mask portion, and 21 is a mask opening during vapor deposition of an organic material. Since the mask 11 is generally formed by etching a metal foil, the composition is as follows. The size of the mask portion (20) and the opening (21) of the mask pattern (10) may be limited by the thickness h (h is generally greater than 30 μm) of the foil itself and the technical limit, thereby limiting the resolution of the final OLED product; In other words, the width dimension d1 of the opening (21) is difficult to further reduce (it is very difficult to make an opening with a d1 of less than 30um at present), and even if it is small, the opening of a large aspect ratio cannot satisfy the high-quality evaporation process. . In addition, if a large-sized mask is produced, the metal-type mask body 11 will have a large quality, which may cause the mask body 11 to sag (ie, a concave phenomenon may occur in the middle of the board surface), which is accurate. A higher mask evaporation process is disadvantageous. In view of this, there is a need in the industry for a solution that can solve this problem.

有鑑於此,本發明提供了一種蒸鍍用磁性掩模板的製作方法,通過該方法製作的掩模板能夠有效克服以上問題,具體技術方案如下。In view of the above, the present invention provides a method for fabricating a magnetic mask for vapor deposition, and the mask formed by the method can effectively overcome the above problems, and the specific technical solutions are as follows.

一種蒸鍍用複合磁性掩模板的製作方法,其包括以下步驟:A method for manufacturing a composite magnetic mask for vapor deposition, comprising the steps of:

S1、金屬支撐層電鑄製作,製作具有一定厚度的金屬支撐層,所述金屬支撐層上設置有特定的視窗結構,所述金屬支撐層是採用電鑄技術製作的,所述電鑄技術包括:S1, a metal support layer is electroformed, and a metal support layer having a certain thickness is formed. The metal support layer is provided with a specific window structure, and the metal support layer is fabricated by electroforming technology, and the electroforming technology includes :

S11、基板準備,選取表面潔淨平整的電鑄沉積基板;S11, preparing the substrate, and selecting an electroformed deposition substrate with a clean surface;

S12、貼膜,在沉積基板的一表面壓貼或塗覆一層感光膜形成感光膜層;S12, film, pressing or coating a photosensitive film on a surface of the deposition substrate to form a photosensitive film layer;

S13、曝光,對S12中的感光膜層特定區域進行曝光,其感光膜層曝光的區域為所述視窗結構所在區域,所述視窗結構外的其它區域的感光膜未被曝光;S13, exposing, exposing a specific area of the photosensitive film layer in S12, the exposed area of the photosensitive film layer is the area where the window structure is located, and the photosensitive film of other areas outside the window structure is not exposed;

S14、顯影,對經過S13步驟曝光處理後的感光膜層進行顯影處理,將未被曝光區域的感光膜去除,形成待電鑄沉積區域;S14, developing, developing the photosensitive film layer after the exposure process in step S13, removing the photosensitive film in the unexposed area to form a deposition area to be electroformed;

S15、電鑄,將顯影處理後的電鑄沉積基板置於電鑄槽中電鑄成型,形成具有視窗結構的金屬支撐層;S15, electroforming, electroforming the electroformed deposition substrate after the development process is placed in an electroforming tank to form a metal support layer having a window structure;

S2、金屬支撐層表面覆膜,在具有視窗結構的所述金屬支撐層表面覆上一層具有一定厚度的光阻形成光阻膜層;S2, a surface of the metal support layer is coated, and a surface of the metal support layer having a window structure is coated with a photoresist having a certain thickness to form a photoresist film layer;

S3、光阻膜層曝光,在所述金屬支撐層具有光阻膜層的一面進行曝光處理,對預設區域進行曝光,在所述光阻膜層上形成光阻曝光區域和光阻非曝光區域;S3, exposing the photoresist film layer, performing exposure processing on one side of the metal support layer having the photoresist film layer, exposing the predetermined region, forming a photoresist exposure region and a photoresist non-exposure region on the photoresist film layer ;

S4、光阻膜層顯影,通過顯影將S3步驟中光阻非曝光區域內的光阻去除,保留光阻曝光區域的光阻,顯影後形成具有開口結構的光阻膜層構成所述蒸鍍用複合磁性掩模板的掩模層;S4, developing the photoresist film layer, removing the photoresist in the photoresist non-exposed area in the step S3 by development, retaining the photoresist of the photoresist exposed region, and developing a photoresist film layer having an open structure to form the vapor deposition. a mask layer using a composite magnetic mask;

本發明中,所述金屬支撐層及所述具有開口結構的光阻膜層構成所述複合磁性掩模板,所述掩模層上形成的開口結構與所述S3步驟中的光阻非曝光區域相對應,所述掩模層上形成的開口結構處於所述金屬支撐層的視窗結構內部,所述金屬支撐層上的每個視窗結構內部至少具有一個所述開口結構。In the present invention, the metal supporting layer and the photoresist film layer having an opening structure constitute the composite magnetic mask, the opening structure formed on the mask layer and the photoresist non-exposed area in the step S3 Correspondingly, the opening structure formed on the mask layer is inside the window structure of the metal supporting layer, and each window structure on the metal supporting layer has at least one opening structure.

進一步,所述S1金屬支撐層電鑄製作中S15電鑄步驟之後還包括:Further, after the S15 electroforming step in the S1 metal support layer electroforming, the method further comprises:

褪膜步驟,將所述金屬支撐層進行褪膜處理,將所述金屬支撐層視窗結構內部的感光膜全部去除。In the film-removing step, the metal supporting layer is subjected to a film-removing treatment, and the photosensitive film inside the metal supporting layer window structure is completely removed.

進一步,所述褪膜步驟之前或之後還包括:Further, before or after the step of removing the film, the method further comprises:

剝離步驟,將所述金屬支撐層從所述電鑄沉積基板上剝離開來。In a stripping step, the metal support layer is peeled off from the electroformed deposition substrate.

進一步,所述S4光阻膜層顯影步驟之後還包括: 剝離步驟,將所述蒸鍍用複合磁性掩模板的掩模層從所述電鑄沉積基板上剝離開來。Further, after the developing step of the S4 photoresist film layer, the method further includes: a peeling step of peeling off the mask layer of the composite magnetic mask for vapor deposition from the electroformed deposition substrate.

進一步,所述S4光阻膜層顯影步驟之後還包括: 烘烤固化步驟,將經過S4光阻膜層顯影步驟後形成所述複合磁性掩模板置於烤箱中進行烘烤固化。Further, after the developing step of the S4 photoresist film layer, the method further comprises: a baking curing step of forming the composite magnetic mask plate in the oven after the S4 photoresist film layer development step to perform baking curing.

進一步,所述光阻膜層的厚度不大於所述金屬支撐層的厚度。Further, the thickness of the photoresist film layer is not greater than the thickness of the metal support layer.

進一步,所述S15電鑄步驟中,所述電鑄形成的金屬支撐層厚度大於所述S12貼膜步驟中的感光幹膜厚度,形成的所述金屬支撐層具有收縮型的視窗結構。Further, in the S15 electroforming step, the thickness of the metal supporting layer formed by the electroforming is greater than the thickness of the photosensitive dry film in the S12 filming step, and the formed metal supporting layer has a shrinkable window structure.

進一步,所述金屬支撐層上的所述視窗結構為陣列方式排布。Further, the window structures on the metal supporting layer are arranged in an array manner.

進一步,所述S2金屬支撐層表面覆膜步驟中是採用光阻幹膜進行壓覆成型方式或光阻濕膜塗覆成型方式進行覆膜的。Further, in the step of coating the surface of the S2 metal supporting layer, the film is coated by a photoresist film or a photoresist film coating method.

進一步,所述金屬支撐層的厚度範圍為:20-60μm;所述掩模層的厚度範圍為:2-20μm;所述掩模層上形成的所述開口結構的尺寸範圍為15-40μm。Further, the thickness of the metal supporting layer ranges from 20 to 60 μm; the thickness of the mask layer ranges from 2 to 20 μm; and the size of the opening structure formed on the mask layer ranges from 15 to 40 μm.

作為優選,本發明中所述金屬支撐層的材料為鎳基合金,例如為鎳鐵合金。Preferably, the material of the metal supporting layer in the present invention is a nickel-based alloy such as a nickel-iron alloy.

根據本專利背景技術中對現有技術所述,傳統掩模板的構成材質全部為金屬合金,本發明提供了一個完全不同於現有蝕刻技術製作掩模板的方法,通過該方法製作的磁性掩模板具有以下優勢:由於有金屬掩模支撐層的作用,可以將構成掩模板的有機掩模層做的很薄,如此在保證掩模層開口具有較小高寬比的前提下,進一步將開口的寬度尺寸做的更小,從而使得形成的最終磁性掩模板能夠蒸鍍形成解析度更高的OLED產品;而且由於電鑄具有高精度的特性,通過電鑄技術提供的金屬掩模支撐層具有較高的位置精度,進而保障最終掩模板具有較高的位置精度,以更好的適應蒸鍍應用。According to the prior art of the present patent, the constituent materials of the conventional mask are all metal alloys, and the present invention provides a method for fabricating a mask completely different from the existing etching technique, and the magnetic mask produced by the method has the following Advantages: Due to the role of the metal mask support layer, the organic mask layer constituting the mask can be made very thin, so that the width dimension of the opening is further increased under the premise that the opening of the mask layer has a small aspect ratio. Made smaller, so that the final magnetic mask formed can be evaporated to form a higher resolution OLED product; and because of the high precision of electroforming, the metal mask support layer provided by electroforming has a higher Positional accuracy, which in turn ensures a high positional accuracy of the final reticle for better adaptation to evaporation applications.

本發明附加的方面和優點將在下面的描述中部分給出,部分將從下面的描述中變得明顯,或通過本發明的實踐瞭解到。The additional aspects and advantages of the invention will be set forth in part in the description which follows.

下面詳細描述本發明的實施例,所述實施例的示例在發明圖式中示出,其中自始至終相同或類似的標號表示相同或類似的元件或具有相同或類似功能的元件。下面通過參考發明圖式描述的實施例是示例性的,僅用於解釋本發明,而不能解釋為對本發明的限制。The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.

在本發明的描述中,需要理解的是,術語 “上”、“下”、“底”、“頂”、“前”、“後”、“內”、“外”、“橫”、“豎”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "back", "inside", "outside", "horizontal", " The orientation or positional relationship of the vertical or the like is based on the orientation or positional relationship shown in the drawings, and is merely for the convenience of describing the present invention and the simplified description, and does not indicate or imply that the device or component referred to has a specific orientation. The specific orientation and operation are not to be construed as limiting the invention.

下面將參照發明圖式來描述本發明磁性掩模板的製作方法,如圖3所示,為本發明所提供的磁性掩模板製作流程;如圖4至圖7所示,為採用本發明所提供方法進行掩模板製作的幾種不同實施例示意圖。圖4至圖7中,40為電鑄沉積的基板,400為感光膜層,401為感光膜層400上曝光區域,402為未曝光的區域,403為待電鑄沉積區域,41為電鑄形成的金屬支撐層, 410為金屬支撐層上視窗結構,42為光阻膜層,420為光阻膜層42上的開口結構,421為光阻曝光區域,422為光阻非曝光區域。The method for fabricating the magnetic mask of the present invention will be described below with reference to the drawings, as shown in FIG. 3, which is a magnetic mask manufacturing process provided by the present invention; as shown in FIGS. 4 to 7, the present invention is provided. Method A schematic diagram of several different embodiments of mask fabrication. 4 to 7, 40 is an electroformed deposition substrate, 400 is a photosensitive film layer, 401 is an exposed area on the photosensitive film layer 400, 402 is an unexposed area, 403 is an electroformed deposition area, and 41 is electroforming. The metal support layer is formed, 410 is a metal support layer upper window structure, 42 is a photoresist film layer, 420 is an opening structure on the photoresist film layer 42, 421 is a photoresist exposure region, and 422 is a photoresist non-exposure region.

如圖3所示,本發明所提供的磁性掩模板製作流程包括步驟:S1、金屬支撐層電鑄製作;S2、金屬支撐層表面覆膜;S3、光阻膜層曝光;S4、光阻膜層顯影。As shown in FIG. 3, the magnetic mask manufacturing process provided by the present invention comprises the steps of: S1, metal support layer electroforming; S2, metal support layer surface coating; S3, photoresist film exposure; S4, photoresist film Layer development.

實施例一Embodiment 1

結合圖4,本發明的實施例一展開如下:Referring to Figure 4, an embodiment of the present invention is developed as follows:

S1、金屬支撐層電鑄製作,製作具有一定厚度的金屬支撐層41,金屬支撐層41上設置有特定的視窗結構410,金屬支撐層41是採用電鑄技術製作的,具體電鑄技術包括:S1, the metal support layer is electroformed to produce a metal support layer 41 having a certain thickness. The metal support layer 41 is provided with a specific window structure 410. The metal support layer 41 is made by electroforming technology. The specific electroforming technology includes:

S11、基板準備,選取表面潔淨平整的電鑄沉積基板40;S11, the substrate is prepared, and the electroformed deposition substrate 40 with a clean surface is selected;

S12、貼膜,在沉積基板40的一表面壓貼或塗覆一層感光膜形成感光膜層400;S12, film, a surface of the deposition substrate 40 is pressed or coated with a photosensitive film to form a photosensitive film layer 400;

S13、曝光,對S12中的感光膜層400特定區域進行曝光,其感光膜層曝光的區域401為視窗結構410所在區域,視窗結構410外的其它區域402的感光膜未被曝光;S13, exposing, exposing a specific region of the photosensitive film layer 400 in S12, the exposed region 401 of the photosensitive film layer is the region where the window structure 410 is located, and the photosensitive film of the other region 402 outside the window structure 410 is not exposed;

S14、顯影,對經過S13步驟曝光處理後的感光膜層400進行顯影處理,將未被曝光區域402的感光膜去除,形成待電鑄沉積區域403;S14, development, the photosensitive film layer 400 after the exposure process of S13 step is developed, the photosensitive film of the unexposed area 402 is removed, forming a deposition area 403 to be electroformed;

S15、電鑄,將顯影處理後的電鑄沉積基板40置於電鑄槽中電鑄成型,在待電鑄沉積區域403上形成具有視窗結構410的金屬支撐層41;S15, electroforming, the electroformed deposition substrate 40 after development processing is electroformed in an electroforming tank, and a metal support layer 41 having a window structure 410 is formed on the electroformed deposition area 403;

S2、金屬支撐層表面覆膜,在具有視窗結構410的金屬支撐層41一表面覆上一層具有一定厚度的光阻形成光阻膜層42;S2, a metal support layer surface coating, a surface of the metal support layer 41 having the window structure 410 is coated with a photoresist having a certain thickness to form a photoresist film layer 42;

S3、光阻膜層曝光,在金屬支撐層41具有光阻膜層42的一面進行曝光處理,對預設區域進行曝光,在光阻膜層42上形成光阻曝光區域421和光阻非曝光區域422;S3, the photoresist film layer is exposed, and the metal support layer 41 is exposed on one side of the photoresist film layer 42 to expose the predetermined region, and the photoresist exposed region 421 and the photoresist non-exposed region are formed on the photoresist film layer 42. 422;

S4、光阻膜層顯影,通過顯影將S3步驟中光阻非曝光區域422內的光阻去除,保留光阻曝光區域421的光阻,顯影後形成具有開口結構420的光阻膜層42構成本發明蒸鍍用複合磁性掩模板的掩模層;S4, developing the photoresist film layer, removing the photoresist in the photoresist non-exposed region 422 in the step S3 by development, leaving the photoresist of the photoresist exposure region 421, and forming a photoresist film layer 42 having an opening structure 420 after development. a mask layer of a composite magnetic mask for vapor deposition of the present invention;

本發明中,金屬支撐層41及具有開口結構420的光阻膜層42構成本發明中的複合磁性掩模板,掩模層上形成的開口結構420與S3步驟中的光阻非曝光區域422相對應,掩模層上形成的開口結構420處於金屬支撐層41的視窗結構410內部(開口結構420的面積小於相應的視窗結構410的面積),金屬支撐層41上的每個視窗結構410內部至少具有一個開口結構420。具體在實施例一中,每個視窗結構410內部具有一個開口結構420。In the present invention, the metal supporting layer 41 and the photoresist film layer 42 having the opening structure 420 constitute the composite magnetic mask of the present invention, and the opening structure 420 formed on the mask layer is opposite to the photoresist non-exposed region 422 in the step S3. Correspondingly, the opening structure 420 formed on the mask layer is inside the window structure 410 of the metal supporting layer 41 (the area of the opening structure 420 is smaller than the area of the corresponding window structure 410), and at least the inside of each window structure 410 on the metal supporting layer 41 is at least There is an opening structure 420. Specifically, in the first embodiment, each of the window structures 410 has an opening structure 420 inside.

在實施例一中,S15電鑄步驟之後還包括:In the first embodiment, after the S15 electroforming step, the method further comprises:

褪膜步驟(圖中未示出),將金屬支撐層41進行褪膜處理,將金屬支撐層41視窗結構410內部的感光膜(即曝光區域401的感光膜)全部去除。In the fading step (not shown), the metal supporting layer 41 is subjected to a fading process, and the photosensitive film inside the window structure 410 of the metal supporting layer 41 (that is, the photosensitive film of the exposed region 401) is completely removed.

在實施例一中,褪膜步驟之前或之後還包括:In the first embodiment, before or after the fading step, the method further comprises:

剝離步驟(圖中未示出),將金屬支撐層41從電鑄沉積基板40上剝離開來。A stripping step (not shown) separates the metal supporting layer 41 from the electroformed deposition substrate 40.

在一些實施例中,本發明在S4光阻膜層顯影步驟之後還包括:In some embodiments, the present invention further comprises, after the step of developing the S4 photoresist layer:

烘烤固化步驟(圖中未示出),將經過S4光阻膜層顯影步驟後形成的複合磁性掩模板置於烤箱中進行烘烤固化,使得光阻膜層42具有更為穩定的性能,且與金屬支撐層41之間具有較好的結合力。a baking curing step (not shown), the composite magnetic mask formed after the S4 photoresist film development step is placed in an oven for baking and curing, so that the photoresist film layer 42 has more stable performance. And a good bonding force with the metal support layer 41.

為了更好的體現本發明的優勢,本發明中光阻膜層42的厚度不大於金屬支撐層41的厚度,通過本發明製作的掩模板用於蒸鍍,其蒸鍍效果直接決定於掩模板的掩模層(即具有開口結構的光阻膜層)的開口結構420,較薄的光阻膜層42能夠較大程度上減小掩模板開口對蒸鍍的影響。In order to better embody the advantages of the present invention, the thickness of the photoresist film layer 42 in the present invention is not greater than the thickness of the metal support layer 41. The mask plate produced by the present invention is used for vapor deposition, and the evaporation effect is directly determined by the mask. The opening structure 420 of the mask layer (ie, the photoresist film layer having an open structure), the thinner photoresist film layer 42 can greatly reduce the influence of the mask opening on the evaporation.

本實施例中,作為對本發明其它技術細節的公開,為適應後期OLED顯示幕上圖元的排布方式,採用本發明製得磁性掩模板的金屬支撐層41上視窗結構410為陣列方式排布,相應的,設置在掩模層上的開口結構420亦為陣列方式排布(後續將作進一步展開)。In this embodiment, as a disclosure of other technical details of the present invention, in order to adapt to the arrangement of the graphics elements on the OLED display screen in the later stage, the window structure 410 on the metal supporting layer 41 of the magnetic mask board prepared by the present invention is arranged in an array manner. Correspondingly, the opening structures 420 disposed on the mask layer are also arranged in an array manner (further expanded later).

本發明中,S2金屬支撐層表面覆膜步驟中是採用光阻幹膜進行壓覆成型方式或光阻濕膜塗覆成型方式進行覆膜的。其中,採用光阻幹膜進行壓覆成型方式,即是將光阻預先形成一定厚度的幹膜,然後通過壓貼的方式使得光阻幹膜附著在金屬支撐層表面;採用光阻濕膜塗覆成型方式,即是將乳劑狀濕膜通過機械塗覆的方式均勻塗布在金屬支撐層表面。In the present invention, in the step of coating the surface of the S2 metal support layer, the film is coated by a photoresist film or a photoresist film by a photoresist film. Wherein, the photoresist dry film is used for the overmolding method, that is, the photoresist is pre-formed into a dry film of a certain thickness, and then the photoresist dry film is attached to the surface of the metal support layer by pressing; the photoresist is coated with a photoresist The overmolding method is to uniformly coat the emulsion-like wet film on the surface of the metal supporting layer by mechanical coating.

另外,作為對本發明中構成所述磁性掩模板各層厚度的限定,所述金屬支撐層41的厚度範圍為:20-60μm;掩模層的厚度(即光阻膜層42的厚度)範圍為:2-20μm。作為其中優選實施例,支撐層41的厚度為25μm、30μm、35μm、40μm、45μm、50μm、55μm,光阻膜層42的厚度為5μm、8μm、10μm、12μm 、15μm、18μm。當然,可以理解的是,本發明在實際應用過程中,金屬支撐層41的厚度範圍並不局限於20-60μm,掩模層的厚度(即光阻膜層42的厚度)亦不局限於2-20μm。In addition, as a limitation on the thickness of each layer constituting the magnetic mask in the present invention, the thickness of the metal supporting layer 41 ranges from 20 to 60 μm; the thickness of the mask layer (ie, the thickness of the photoresist film layer 42) ranges from: 2-20 μm. As a preferred embodiment, the thickness of the support layer 41 is 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, and the thickness of the photoresist film layer 42 is 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, and 18 μm. Of course, it can be understood that, in the actual application process, the thickness range of the metal supporting layer 41 is not limited to 20-60 μm, and the thickness of the mask layer (ie, the thickness of the photoresist film layer 42) is not limited to 2. -20 μm.

在本發明中,掩模層上形成的開口結構作為最終限定蒸鍍應用過程中有機材料的蒸鍍品質,作為優選方案,本實施例中,掩模層上形成的開口結構420的尺寸範圍為15-40μm,具體可以設計為18μm、20μm、25μm、30μm、35μm。In the present invention, the opening structure formed on the mask layer serves as a final definition of the evaporation quality of the organic material during the evaporation application. As a preferred embodiment, in the embodiment, the size of the opening structure 420 formed on the mask layer is 15-40 μm can be specifically designed to be 18 μm, 20 μm, 25 μm, 30 μm, and 35 μm.

本發明中金屬支撐層是通過電鑄成型的,其材質為鎳基合金,例如為鎳鐵合金。In the present invention, the metal supporting layer is formed by electroforming, and the material thereof is a nickel-based alloy such as a nickel-iron alloy.

實施例二Embodiment 2

作為本發明的實施例二,如圖5所示,其與實施例一不同的是:實施例一中,金屬支撐層41上的每個視窗結構410內部僅具有一個開口結構420;而本實施例中每個視窗結構410內部具有多個開口結構420。As a second embodiment of the present invention, as shown in FIG. 5, it differs from the first embodiment in that, in the first embodiment, each of the window structures 410 on the metal supporting layer 41 has only one opening structure 420 therein; Each of the window structures 410 has a plurality of open structures 420 therein.

實施例三Embodiment 3

作為本發明的實施例三,如圖6所示,其與實施例一、二不同的是:實施例一、二中“剝離步驟”是在電鑄技術完成後進行的(即金屬支撐層表面覆膜步驟S2之前即完成);而在本實施例中,“剝離步驟”(作為步驟S5)是在S4光阻膜層顯影步驟之後。如此設計方式能夠防止較好的避免具有較薄厚度的金屬支撐層41在掩模板製作過程中出現折痕等損傷。As a third embodiment of the present invention, as shown in FIG. 6, it is different from the first embodiment and the second embodiment. The "peeling step" in the first embodiment and the second embodiment is performed after the electroforming technology is completed (that is, the surface of the metal supporting layer). The film coating step S2 is completed before; in the present embodiment, the "peeling step" (as step S5) is after the S4 photoresist film layer development step. Such a design can prevent better avoidance of damage such as creases in the metal support layer 41 having a thin thickness during the fabrication of the mask.

實施例四Embodiment 4

本實施例如圖7所示,與前面三個實施例不同的是:本實施例中電鑄形成金屬支撐層時,電鑄沉積的厚度大於S12貼膜步驟中的感光幹膜厚度,形成的所述金屬支撐層具有收縮型的視窗結構。如圖7所示,由於電鑄沉積厚度大於感光膜40的厚度,在形成金屬支撐層41時,視窗結構410上端會出現一定的收縮。如此設計能夠在減少金屬支撐層41對蒸鍍影響的同時增大金屬支撐層41與光阻膜層42之間的附著面積,從而有效的提高掩模板的壽命。The present embodiment is different from the previous three embodiments, as shown in FIG. 7. In the present embodiment, when electroforming a metal support layer, the thickness of the electroformed deposition is greater than the thickness of the photosensitive dry film in the S12 filming step, and the formed The metal support layer has a shrinkable window structure. As shown in FIG. 7, since the thickness of the electroformed deposition is larger than the thickness of the photosensitive film 40, a certain shrinkage occurs at the upper end of the window structure 410 when the metal supporting layer 41 is formed. Such a design can increase the adhesion area between the metal supporting layer 41 and the photoresist film layer 42 while reducing the influence of the metal supporting layer 41 on the vapor deposition, thereby effectively improving the life of the mask.

為了更好的瞭解本發明,以下是對本發明形成的一些產品結構的具體展示。In order to better understand the present invention, the following is a detailed demonstration of some of the product structures formed by the present invention.

圖8至圖12所展示的為採用本發明所提供技術方案製作的一種磁性掩模板的相關實施例,其具體作以下展開:8 to 12 show a related embodiment of a magnetic mask produced by the technical solution provided by the present invention, which is specifically developed as follows:

圖8所示為採用本發明所涉及方法製作的磁性掩模板的整體示意圖;圖9所示為圖8中沿B-B方向的截面示意圖;圖10所示為構成磁性掩模板的掩模層整體示意圖;圖11所示為構成磁性掩模板的金屬支撐層整體示意圖;圖12所示為圖4中I區域的放大示意圖。8 is a schematic overall view of a magnetic mask produced by the method of the present invention; FIG. 9 is a cross-sectional view taken along line BB of FIG. 8; and FIG. 10 is an overall schematic view of a mask layer constituting a magnetic mask. FIG. 11 is a schematic overall view of a metal supporting layer constituting a magnetic mask; FIG. 12 is an enlarged schematic view showing a region I of FIG.

圖8所示為採用本發明所涉及方法製作的磁性掩模板的整體示意圖,其截面示意圖如圖9所示,磁性掩模板30由光阻膜層42和金屬支撐層41兩層結構構成,光阻膜層42上設置有若干由開口結構420陣列形成的開口單元311。如圖12所示,相鄰兩開口單元311之間間隙312的寬度d2大於同一開口單元311內相鄰兩開口結構420之間的間距d3;金屬支撐層41作為光阻膜層42的載體,金屬支撐層41設置有若干鏤空的視窗結構410,視窗結構410之間通過內部若干交錯的支撐條411區分,如圖11所示。磁性掩模板30的光阻膜層42與金屬支撐層41之間緊密貼合,光阻膜層42的開口單元311與金屬支撐層41的視窗結構410相對應,即如圖12所示,每個由開口結構420構成的開口單元311與相應視窗結構410的位置相對應。金屬支撐層41的支撐條411均設置在光阻膜層42上相鄰兩開口單元311之間形成的間隙312上,如圖9、12所示,支撐條411的位置與開口單元311之間的間隙312位置相對應。支撐條411的寬度與光阻膜層42上相鄰兩開口單元311之間形成的間隙312寬度相適應,且金屬支撐層41不會對光阻膜層42的開口結構420形成遮擋,如圖12所示,支撐條411的寬度d4不大於相對應的相鄰兩開口單元311之間間隙312的寬度d2。8 is a schematic overall view of a magnetic mask produced by the method of the present invention. A schematic cross-sectional view is shown in FIG. 9. The magnetic mask 30 is composed of a two-layer structure of a photoresist film layer 42 and a metal support layer 41. The resist layer 42 is provided with a plurality of opening units 311 formed by an array of opening structures 420. As shown in FIG. 12, the width d2 of the gap 312 between the adjacent two opening units 311 is larger than the spacing d3 between the adjacent two opening structures 420 in the same opening unit 311; the metal supporting layer 41 serves as a carrier of the photoresist film layer 42, The metal support layer 41 is provided with a plurality of hollowed window structures 410, which are distinguished by a plurality of internal staggered support bars 411, as shown in FIG. The photoresist film layer 42 of the magnetic mask 30 is closely adhered to the metal supporting layer 41, and the opening unit 311 of the photoresist film layer 42 corresponds to the window structure 410 of the metal supporting layer 41, that is, as shown in FIG. The opening unit 311 composed of the opening structure 420 corresponds to the position of the corresponding window structure 410. The support bars 411 of the metal supporting layer 41 are disposed on the gap 312 formed between the adjacent two opening units 311 on the photoresist film layer 42. As shown in FIGS. 9 and 12, the position of the support bar 411 is between the opening unit 311 and the opening unit 311. The gap 312 position corresponds. The width of the support strip 411 is adapted to the width of the gap 312 formed between the adjacent two opening units 311 on the photoresist film layer 42, and the metal support layer 41 does not block the opening structure 420 of the photoresist film layer 42. As shown in FIG. 12, the width d4 of the support bar 411 is not greater than the width d2 of the gap 312 between the corresponding adjacent two opening cells 311.

作為一具體實施例,磁性掩模板的掩模層上開口單元311與金屬支撐層41的鏤空視窗均形成4*3的陣列,具體如圖10、圖11所示,開口單元 311的位置一一與視窗結構410的位置相對應。As a specific embodiment, the aperture layer 311 of the mask layer of the magnetic mask and the hollow window of the metal supporting layer 41 form an array of 4*3, as shown in FIG. 10 and FIG. 11, the positions of the opening unit 311 are one by one. Corresponds to the position of the window structure 410.

圖13至圖17所展示的為採用本發明所提供技術方案製作的另一種不同磁性掩模板的實施例示意圖。其中,圖13所示為磁性掩模板的整體示意圖;圖14為圖13中I部分的放大示意圖;圖15為圖14中B-B方向的截面示意圖;圖16為圖14反面的示意圖;圖17為另一種結構相似的示意圖。13 to 17 are schematic views showing an embodiment of another different magnetic mask produced by the technical solution provided by the present invention. 13 is an overall schematic view of a magnetic mask; FIG. 14 is an enlarged schematic view of a portion I of FIG. 13; FIG. 15 is a schematic cross-sectional view of the BB direction of FIG. 14; Another structurally similar schematic.

如圖14至圖16所展示,本實施例中磁性掩模板金屬支撐層41的視窗結構410與光阻膜層42的開口結構420為一一對應關係,即每個視窗結構410內部設置有一個開口結構420,且整體構成呈陣列排布。As shown in FIG. 14 to FIG. 16 , in the present embodiment, the window structure 410 of the magnetic mask metal support layer 41 and the opening structure 420 of the photoresist film layer 42 have a one-to-one correspondence, that is, each window structure 410 is internally provided with a The opening structure 420 is integrally formed in an array.

不同於圖14至圖16所示,圖17所示實施例中的每個視窗結構410內部設置有兩個個開口結構420。Different from FIG. 14 to FIG. 16, each of the window structures 410 in the embodiment shown in FIG. 17 is internally provided with two opening structures 420.

基於以上,採用本發明所提供的技術方案製作的掩模板結構亦可以為一個視窗結構對應3個開口結構420,甚至一個視窗結構對應更多的開口結構420。Based on the above, the mask structure fabricated by the technical solution provided by the present invention may also have a window structure corresponding to three opening structures 420, and even one window structure corresponds to more opening structures 420.

圖18所示為採用本發明磁性掩模板進行蒸鍍有機材料的示意圖,在密封腔室中,裝配在外框12上的掩模板30通過外框12固定在固定機構81上,掩模板30上部設置有待蒸鍍的基板80,下部設置有有機蒸鍍源82,有機蒸鍍源82中的有機材料通過蒸發擴散到腔室內部,擴散的有機材料在經過掩模板30的鏤空開口沉積到基板80上形成有機發光層。一般基板背後設置有磁性吸附裝置。Figure 18 is a schematic view showing the vapor deposition of an organic material using the magnetic mask of the present invention. In the sealed chamber, the mask 30 mounted on the outer frame 12 is fixed to the fixing mechanism 81 by the outer frame 12, and the upper portion of the mask 30 is disposed. The substrate 80 to be vapor-deposited is provided with an organic vapor deposition source 82. The organic material in the organic evaporation source 82 is diffused into the chamber by evaporation, and the diffused organic material is deposited on the substrate 80 through the hollow opening of the mask 30. An organic light emitting layer is formed. A magnetic adsorption device is generally disposed behind the substrate.

本發明所涉及的掩模板保留有金屬層結構,其具備傳統掩模板的磁性,在後期應用過程中,可被基板背後的磁性吸附設備吸附,可進一步減小掩模板的下垂量。The mask plate according to the present invention retains a metal layer structure, which has the magnetic properties of the conventional mask plate, and can be adsorbed by the magnetic adsorption device behind the substrate in the later application process, thereby further reducing the amount of sag of the mask.

另外,根據本專利背景技術中對現有技術所述,傳統掩模板的構成材質全部為金屬合金,本發明提供了一個完全不同于現有蝕刻技術製作掩模板的方法,通過該方法製作的磁性掩模板具有以下優勢:由於有金屬掩模支撐層的作用,可以將構成掩模板的有機掩模層做的很薄,如此在保證掩模層開口具有較小高寬比的前提下,進一步將開口的寬度尺寸做的更小,從而使得形成的最終磁性掩模板能夠蒸鍍形成解析度更高的OLED產品。In addition, according to the prior art in the prior art, the constituent materials of the conventional mask are all metal alloys, and the present invention provides a method for fabricating a mask completely different from the existing etching technology, and the magnetic mask produced by the method is provided. The utility model has the following advantages: the organic mask layer constituting the mask can be made thin due to the function of the metal mask supporting layer, so that the opening of the opening is further ensured under the premise that the opening of the mask layer has a small aspect ratio The width dimension is made smaller so that the resulting final magnetic mask can be evaporated to form a higher resolution OLED product.

具體而言,通過本發明製作的掩模板最終決定有機材料沉積效果為光阻膜層42的開口結構420,由於光阻具有有機材質的特性,其比較容易實現“輕薄”化。由於具有“輕”的特性,處於其下方的金屬支撐層41易於實現對其支撐;而“薄”的特徵,使得設置於其上的開口結構42能夠較為容易實現小尺寸開口設計。Specifically, the mask plate produced by the present invention finally determines the deposition effect of the organic material as the opening structure 420 of the photoresist film layer 42. Since the photoresist has the characteristics of an organic material, it is relatively easy to achieve "light and thin". Due to the "light" nature, the metal support layer 41 underneath it is easy to support it; and the "thin" feature allows the open structure 42 disposed thereon to more easily achieve a small size opening design.

本發明內容中“蒸鍍用磁性掩模板”、“磁性掩模板”、“掩模板”系為同一概念;本發明中,需要注意的是,光阻、感光膜為兩個不同的概念,雖然其均為具有感光特性的材質,但相比較而言,曝光後的光阻比曝光後的感光膜具有更為穩定的性能,光阻在曝光後是作為永久性材料使用的,其不容易被外界損壞,而感光膜僅為蝕刻輔助材料。In the present invention, the "magnetic mask for vapor deposition", "magnetic mask", and "mask" are the same concept; in the present invention, it should be noted that the photoresist and the photosensitive film are two different concepts, although They are all materials with photosensitive properties, but in comparison, the photoresist after exposure has more stable performance than the exposed photosensitive film, and the photoresist is used as a permanent material after exposure, which is not easy to be The outside is damaged, and the photosensitive film is only an etching aid.

另外,任何提及“一個實施例”、“實施例”、“示意性實施例”等意指結合該實施例描述的具體構件、結構或者特點包含于本發明的至少一個實施例中。在本說明書各處的該示意性表述不一定指的是相同的實施例。而且,當結合任何實施例描述具體構件、結構或者特點時,所主張的是,結合其他的實施例實現這樣的構件、結構或者特點均落在本領域技術人員的範圍之內。In addition, any reference to "an embodiment", "an embodiment", "an exemplary embodiment" or the like means that a particular component, structure or feature described in connection with the embodiment is included in at least one embodiment of the invention. This schematic representation throughout the specification does not necessarily refer to the same embodiment. Further, when a specific component, structure or feature is described in connection with any embodiment, it is claimed that such a component, structure or feature in combination with other embodiments is within the scope of those skilled in the art.

儘管參照本發明的多個示意性實施例對本發明的具體實施方式進行了詳細的描述,但是必須理解,本領域技術人員可以設計出多種其他的改進和實施例,這些改進和實施例將落在本發明原理的精神和範圍之內。具體而言,在前述說明書、圖式以及申請專利範圍的範圍之內,可以在零部件和/或者從屬組合佈局的佈置方面作出合理的變型和改進,而不會脫離本發明的精神。除了零部件和/或佈局方面的變型和改進,其範圍由所附申請專利範圍及其等同物限定。While the embodiments of the present invention have been described in detail with reference to the exemplary embodiments of the embodiments of the invention, it will be understood that those skilled in the art Within the spirit and scope of the principles of the invention. In particular, it is possible to make reasonable modifications and improvements in the arrangement of the components and/or sub-combination arrangements without departing from the spirit of the invention. Variations and modifications in the component parts and/or the scope of the invention are defined by the scope of the appended claims and their equivalents.

10‧‧‧掩模圖案
11‧‧‧掩模板
12‧‧‧外框
20‧‧‧掩模部
21‧‧‧有機材料蒸鍍時的掩模開口
30‧‧‧蒸鍍用複合磁性掩模板
311‧‧‧設置在蒸鍍用複合磁性掩模板30上用於蒸鍍的開口結構420陣列形成的開口單元
312‧‧‧光阻膜層42上相鄰兩開口單元311之間的間隙
40‧‧‧電鑄沉積的基板
400‧‧‧感光膜層
401‧‧‧感光膜層400上曝光區域
402‧‧‧未曝光的區域
403‧‧‧待電鑄沉積區域
41‧‧‧電鑄形成的金屬支撐層
410‧‧‧金屬支撐層上視窗結構
411‧‧‧為兩相鄰視窗結構410之間的支撐條
42‧‧‧光阻膜層
420‧‧‧光阻膜層42上的開口結構
421‧‧‧光阻曝光區域
422‧‧‧光阻非曝光區域
80‧‧‧基板
81‧‧‧為固定掩模板元件的固定機構
82‧‧‧有機蒸鍍源
A-A‧‧‧待剖截面
B-B‧‧‧待剖截面
d1‧‧‧開口21的寬度尺寸
d2‧‧‧為相鄰兩開口單元311之間的間隙寬度
d3‧‧‧為掩模層上同一開口單元311內相鄰兩開口結構420之間的間距
d4‧‧‧為支撐條411的寬度
h‧‧‧掩模板厚度
h1‧‧‧掩模層厚度(即光阻膜層的厚度)
h2‧‧‧金屬支撐層厚度
I‧‧‧待放大的區域
II‧‧‧待放大區域
10‧‧‧ mask pattern
11‧‧‧ mask
12‧‧‧Front frame
20‧‧‧Mask Department
21‧‧‧ Mask opening for evaporation of organic materials
30‧‧‧Composite magnetic mask for evaporation
311‧‧‧ Opening unit formed by array of openings 420 for vapor deposition on composite magnetic mask 30 for vapor deposition
312‧‧‧Gap between adjacent two opening units 311 on the photoresist film layer 42
40‧‧‧Electroforming deposited substrate
400‧‧‧Photosensitive film layer
401‧‧‧Exposure area on the photosensitive film layer 400
402‧‧‧Unexposed areas
403‧‧‧Electrolytic deposition area
41‧‧‧Metal support layer formed by electroforming
410‧‧‧Metal support layer upper window structure
411‧‧‧ is a support strip between two adjacent window structures 410
42‧‧‧Photoresist film
420‧‧‧Open structure on the photoresist film layer 42
421‧‧‧ photoresist exposure area
422‧‧‧ photoresist non-exposure area
80‧‧‧Substrate
81‧‧‧ is a fixing mechanism for fixing the mask element
82‧‧‧Organic evaporation source
AA‧‧‧section to be sectioned
BB‧‧‧section to be sectioned
D1‧‧‧ width dimension of opening 21
D2‧‧‧ is the gap width between two adjacent opening units 311
D3‧‧‧ is the spacing between adjacent two opening structures 420 in the same opening unit 311 on the mask layer
D4‧‧‧ is the width of the support bar 411
H‧‧‧ mask thickness
H1‧‧‧ Mask layer thickness (ie thickness of photoresist film layer)
H2‧‧‧Metal support layer thickness
I‧‧‧ areas to be enlarged
II‧‧‧ area to be enlarged

圖1、為現有技術一種用於OLED蒸鍍用掩模板的結構示意圖; 圖2、為圖1中A-A方向的截面放大示意圖; 圖3、為本發明所提供的蒸鍍用複合磁性掩模板製作流程; 圖4、為採用本發明所提供方法進行掩模板製作的實施例一示意圖; 圖5、為採用本發明所提供方法進行掩模板製作的實施例二示意圖; 圖6、為採用本發明所提供方法進行掩模板製作的實施例三示意圖; 圖7、為採用本發明所提供方法進行掩模板製作的實施例四示意圖; 圖8、為採用本發明所涉及方法製作的磁性掩模板的整體示意圖; 圖9、為圖8中沿B-B方向的截面示意圖; 圖10、為構成磁性掩模板的掩模層整體示意圖; 圖11、為構成磁性掩模板的金屬支撐層整體示意圖; 圖12、為圖9中I區域的放大示意圖; 圖13、為另一種採用本發明所涉及方法製作的磁性掩模板的整體示意圖; 圖14、為圖13中I部分的放大示意圖; 圖15、為圖14中B-B方向的截面示意圖; 圖16、為圖14反面的示意圖; 圖17、為與本發明所涉及掩模板另一種不同結構的示意圖;以及 圖18、為採用本發明磁性掩模板進行蒸鍍有機材料的示意圖。1 is a schematic structural view of a mask for OLED evaporation; FIG. 2 is an enlarged cross-sectional view of the AA direction of FIG. 1; FIG. 3 is a composite magnetic mask for vapor deposition provided by the present invention. FIG. 4 is a schematic view showing a first embodiment of a mask plate produced by the method provided by the present invention; FIG. 5 is a schematic view showing a second embodiment of the mask plate produced by the method provided by the present invention; FIG. 7 is a schematic view showing a fourth embodiment of a mask plate produced by the method provided by the present invention; and FIG. 8 is an overall schematic view of a magnetic mask plate fabricated by the method of the present invention. Figure 9 is a schematic cross-sectional view taken along line BB of Figure 8; Figure 10 is a schematic overall view of a mask layer constituting a magnetic mask; Figure 11 is a schematic overall view of a metal supporting layer constituting a magnetic mask; Figure 12 9 is an enlarged schematic view of the I region; FIG. 13 is an overall schematic view of another magnetic mask produced by the method of the present invention; FIG. 14 is a portion I of FIG. Figure 15 is a schematic cross-sectional view of the BB direction of Figure 14; Figure 16 is a schematic view of the reverse side of Figure 14; Figure 17, is a schematic view of another different structure of the reticle of the present invention; A schematic diagram of vapor deposition of an organic material using the magnetic mask of the present invention.

S1‧‧‧金屬支撐層電鑄製作 S1‧‧‧Metal support layer electroforming

S11‧‧‧基板準備 S11‧‧‧Substrate preparation

S12‧‧‧貼膜 S12‧‧· film

S13‧‧‧曝光 S13‧‧‧ exposure

S14‧‧‧顯影 S14‧‧‧Development

S15‧‧‧電鑄 S15‧‧‧Electric casting

S2‧‧‧金屬支撐層表面覆膜 S2‧‧‧Metal support layer surface coating

S3‧‧‧光阻膜層曝光 S3‧‧‧Photoresist film exposure

S4‧‧‧光阻膜層顯影 S4‧‧‧ photoresist film development

Claims (10)

一種蒸鍍用複合磁性掩模板的製作方法,其包括以下步驟: S1、金屬支撐層電鑄製作,製作具有一定厚度的金屬支撐層,該金屬支撐層上設置有特定的視窗結構,該金屬支撐層是採用電鑄技術製作的,該電鑄技術包括:S11、基板準備,選取表面潔淨平整的電鑄沉積基板;S12、貼膜,在該沉積基板的表面壓貼或塗覆一層感光膜形成感光膜層;S13、曝光,對S12中的該感光膜層特定區域進行曝光,該感光膜層曝光的區域為該視窗結構所在區域,該視窗結構外的其它區域的感光膜未被曝光;S14、顯影,對經過S13步驟曝光處理後的該些感光膜層該進行顯影處理,將未被曝光區域的感光膜去除,形成待電鑄沉積區域;S15、電鑄,將顯影處理後的電鑄沉積基板置於電鑄槽中電鑄成型,形成具有視窗結構的金屬支撐層; S2、金屬支撐層表面覆膜,在具有視窗結構的所述金屬支撐層表面覆上一層具有一定厚度的光阻形成光阻膜層; S3、光阻膜層曝光,在該金屬支撐層具有光阻膜層的一面進行曝光處理,對預設區域進行曝光,在所述光阻膜層上形成光阻曝光區域和光阻非曝光區域; S4、光阻膜層顯影,通過顯影將S3步驟中光阻非曝光區域內的光阻去除,保留光阻曝光區域的光阻,顯影後形成具有開口結構的光阻膜層構成該蒸鍍用複合磁性掩模板的掩模層; 其特徵在於,該金屬支撐層及該具有開口結構的光阻膜層構成該複合磁性掩模板,該掩模層上形成的開口結構與該S3步驟中的光阻非曝光區域相對應,該掩模層上形成的開口結構處於該金屬支撐層的視窗結構內部,該金屬支撐層上的每個視窗結構內部至少具有一個該開口結構。A method for manufacturing a composite magnetic mask for vapor deposition, comprising the steps of: S1, electroforming a metal support layer to form a metal support layer having a certain thickness, wherein the metal support layer is provided with a specific window structure, the metal support The layer is made by electroforming technology. The electroforming technology includes: S11, substrate preparation, selecting an electroformed deposition substrate with a clean surface; S12, film, pressing or coating a photosensitive film on the surface of the deposition substrate to form a photosensitive film a film layer; S13, exposing, exposing a specific region of the photosensitive film layer in S12, the exposed region of the photosensitive film layer is the region where the window structure is located, and the photosensitive film in other regions outside the window structure is not exposed; S14, Developing, developing the photosensitive film layer after the exposure treatment in step S13, removing the photosensitive film in the unexposed area to form a deposition area to be electroformed; S15, electroforming, electroforming deposition after development processing The substrate is electroformed in an electroforming bath to form a metal support layer having a window structure; S2, a surface of the metal support layer is coated, and has a window structure The surface of the metal supporting layer is covered with a photoresist having a certain thickness to form a photoresist film; S3, the photoresist film layer is exposed, and one side of the metal supporting layer having the photoresist film layer is exposed to expose the preset area. Forming a photoresist exposure region and a photoresist non-exposed region on the photoresist film layer; S4, developing the photoresist film layer, removing the photoresist in the photoresist non-exposed region in the step S3 by development, and retaining the photoresist exposure region a resist layer formed by forming a photoresist film having an open structure to form a mask layer of the composite magnetic mask for vapor deposition; wherein the metal support layer and the photoresist film layer having an open structure constitute the composite a magnetic mask, the opening structure formed on the mask layer corresponds to the photoresist non-exposed area in the step S3, and the opening structure formed on the mask layer is inside the window structure of the metal supporting layer, the metal supporting layer Each of the upper window structures has at least one opening structure therein. 如申請專利範圍第1項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該S1金屬支撐層電鑄製作中S15電鑄步驟之後還包括:褪膜步驟,將該金屬支撐層進行褪膜處理,將該金屬支撐層視窗結構內部的感光膜全部去除。The method for fabricating a composite magnetic mask for vapor deposition according to the first aspect of the invention, characterized in that, after the S15 electroforming step in the S1 metal support layer electroforming, the method further comprises: a fading step, the metal support The layer is subjected to a film removal treatment, and the photosensitive film inside the metal support layer window structure is completely removed. 如申請專利範圍第2項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該褪膜步驟之前或之後還包括:剝離步驟,將該金屬支撐層從該電鑄沉積基板上剝離開來。The method for fabricating a composite magnetic mask for vapor deposition according to claim 2, characterized in that before or after the step of removing the film, the method further comprises: a stripping step of depositing the metal supporting layer from the electroformed substrate Peel off. 如申請專利範圍第2項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該S4光阻膜層顯影步驟之後還包括:剝離步驟,將該蒸鍍用複合磁性掩模板的掩模層從該電鑄沉積基板上剝離開來。The method for producing a composite magnetic mask for vapor deposition according to the second aspect of the invention, characterized in that after the step of developing the S4 photoresist film layer, further comprising: a peeling step of the composite magnetic mask for vapor deposition The mask layer is peeled off from the electroformed deposition substrate. 如申請專利範圍第1、2、3或4項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該S4光阻膜層顯影步驟之後還包括:烘烤固化步驟,將經過S4光阻膜層顯影步驟後形成該複合磁性掩模板置於烤箱中進行烘烤固化。The method for fabricating a composite magnetic mask for vapor deposition according to claim 1, 2, 3 or 4, wherein the step of developing the S4 photoresist layer further comprises: a baking curing step; After the S4 photoresist film layer development step, the composite magnetic mask is formed and placed in an oven for baking and curing. 如申請專利範圍第1、2、3或4項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該光阻膜層的厚度不大於該金屬支撐層的厚度。The method for producing a composite magnetic mask for vapor deposition according to claim 1, 2, 3 or 4, wherein the thickness of the photoresist film layer is not greater than the thickness of the metal support layer. 如申請專利範圍第1、2、3或4項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該S15電鑄步驟中,該電鑄形成的金屬支撐層厚度大於該S12貼膜步驟中的感光乾膜厚度,形成的該金屬支撐層具有收縮型的視窗結構。The method for fabricating a composite magnetic mask for vapor deposition according to claim 1, 2, 3 or 4, wherein in the S15 electroforming step, the thickness of the metal support layer formed by the electroforming is greater than the S12 The photosensitive dry film thickness in the filming step, the metal support layer formed has a shrinkable window structure. 如申請專利範圍第1、2、3或4項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該金屬支撐層上的該視窗結構為陣列方式排布。The method for fabricating a composite magnetic mask for vapor deposition according to claim 1, 2, 3 or 4, wherein the window structure on the metal supporting layer is arranged in an array. 如申請專利範圍第1、2、3或4項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該S2金屬支撐層表面覆膜步驟中是採用光阻乾膜進行壓覆成型方式或光阻濕膜塗覆成型方式進行覆膜的。The method for fabricating a composite magnetic mask for vapor deposition according to claim 1, 2, 3 or 4, wherein the S2 metal support layer surface coating step is performed by using a photoresist dry film. The film is formed by a molding method or a photoresist film coating method. 如申請專利範圍第6項所述的蒸鍍用複合磁性掩模板的製作方法,其特徵在於,該金屬支撐層的厚度範圍為:20-60μm;該掩模層的厚度範圍為:2-20μm;該掩模層上形成的該開口結構的尺寸範圍為15-40μm。The method for fabricating a composite magnetic mask for vapor deposition according to claim 6, wherein the thickness of the metal supporting layer ranges from 20 to 60 μm; and the thickness of the mask layer ranges from 2 to 20 μm. The opening structure formed on the mask layer has a size ranging from 15 to 40 μm.
TW105126818A 2015-10-20 2016-08-22 Method of Making Composite Magnetic Mask for Vapor Deposition TWI591424B (en)

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