CN115961314A - Preparation method of composite mask - Google Patents
Preparation method of composite mask Download PDFInfo
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- CN115961314A CN115961314A CN202211030975.XA CN202211030975A CN115961314A CN 115961314 A CN115961314 A CN 115961314A CN 202211030975 A CN202211030975 A CN 202211030975A CN 115961314 A CN115961314 A CN 115961314A
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Abstract
A preparation method of a composite mask comprises the following steps: s1: a photoetching pattern is arranged on the mask plate; s2: removing part of the photoresist through a photoetching pattern; s3: electroforming a mask plate, and uniformly coating a polymer film layer on the mask plate; s4: curing and molding the polymer film layer; s5: pulse drilling is carried out on the solidified polymer film layer, a cone-like truncated cone hole with a cone angle is formed, the diameter of an inlet of the hole is larger than that of an outlet of the hole, and the range of the cone angle is controlled to be 30-120 degrees; s6: removing the residual photoresist by using a cleaning solution; s7: and cleaning the laser opening residues, and drying the mask to finish the preparation. According to the invention, a layer of polymer low-thermal expansion coefficient material attached to metal is added on the electroforming mask plate, so that the thermal expansion of the electroforming mask plate is effectively weakened, and the through hole with a certain taper angle is formed under the action of the femtosecond laser, so that the difficulty that the taper angle is difficult to control effectively when the thickness is pursued by electroforming is solved.
Description
Technical Field
The invention relates to the field of electronic equipment processing, in particular to a preparation method of a composite mask.
Background
FMM (fine metal mask) is a key tool for manufacturing OLED devices. Metals or alloys with low coefficients of expansion are often used as substrates. The current mainstream FMM production technology is divided into two technologies, namely etching and electroforming.
The defect of the etching method is that the etching liquid has isotropic etching effect, the size and the thickness of the opening are close, and the thickness of the Invar alloy used for etching is about 30 mu m thick, so that the size of the opening is large, and the aim of high PPI cannot be achieved.
The electroforming method can effectively control the thickness of the mask. Because of the difficulty in electroforming binary alloy, most manufacturers often use single magnetic metal such as Ni as a base material. But the thermal expansion coefficient of Ni reaches 1.3 x 10 -5 K, which far from meets the requirement of low thermal expansion coefficient of OLED evaporation (3 x 10) -6 and/K). And the Taper angle is difficult to control while the thickness of the substrate is controlled by electroforming.
Therefore, the existing electroforming process is difficult to meet the evaporation requirement of the OLED, and a new mask preparation method is urgently needed.
Disclosure of Invention
The invention aims to effectively overcome the problems of thermal expansion caused by electroforming of a substrate and accurate control of the opening angle in the mask preparation process.
Therefore, a preparation method of the composite mask is provided, and the specific technical scheme is as follows:
a preparation method of a composite mask is characterized by comprising the following steps:
the method comprises the following steps:
s1: a photoetching pattern is arranged on the mask plate;
s2: removing part of the photoresist through a photoetching pattern;
s3: electroforming a mask plate, and uniformly coating a polymer film layer on the mask plate;
s4: curing and molding the polymer film layer;
s5: pulse drilling is carried out on the solidified polymer film layer, a cone-like truncated cone hole with a cone angle is formed, the diameter of an inlet of the hole is larger than that of an outlet of the hole, and the range of the cone angle is controlled to be 30-120 degrees;
s6: removing the residual photoresist by using a cleaning solution;
s7: and cleaning the laser opening residues, and drying the mask to complete preparation.
In order to better implement the invention, the method can further comprise the following steps:
and in S4, the polymer film layer is cured and formed through laser heat treatment or baking.
Further, the method comprises the following steps: the polymer is made of a low-thermal expansion coefficient material, and the polymer film layer is made of polyimide, polypropylene, polyethylene terephthalate or graphene.
Further: in S5, drilling is carried out by adopting the femtosecond laser pulse of a Yb: KGW femtosecond laser.
Further: the parameters adopted by the Yb: KGW femtosecond laser are that the central wavelength is 1024nm, the average power is 6W, the pulse duration is 190fs, the pulse repetition frequency Yb: KGW femtosecond laser rate is 200KHz, the maximum pulse energy is 1mJ, the taper angle is adjusted by changing the pulse amplitude to 1um-100 um.
Further, the method comprises the following steps: the size of the inlet aperture of the hole is 1-40um.
Further: the thickness of the polymer film layer is controlled between 5um and 100 um.
Further, the method comprises the following steps: the cleaning solution adopts hydrofluoroether.
Further, the method comprises the following steps: the polymer film layer is made of polyimide.
Further: the mask is made of Ni, fe and Co.
The beneficial effects of the invention are as follows:
firstly, the invention adds a layer of polymer low thermal expansion coefficient material which is jointed with metal on the electroforming mask plate, and the thermal expansion of the electroforming mask plate can be effectively weakened due to the adhesion of the added layer, thereby solving the thermal expansion problem of the electroforming mask plate.
Secondly, the added material layer is subjected to alignment laser opening, and the through hole with a certain taper angle is opened under the action of femtosecond laser, so that the difficulty that the taper angle is difficult to effectively control in the thinning process of electroforming is solved.
Drawings
FIG. 1 is a flow chart illustrating the operation of the present invention;
FIG. 2 is a schematic view of a coating photoresist;
FIG. 3 is a schematic view of hole formation;
FIG. 4 is a schematic view of the completion of the hole;
FIG. 5 is a schematic view of electroforming;
FIG. 6 is a schematic view showing the completion of electroforming;
FIG. 7 is a schematic view of a polymer coating;
FIG. 8 is a schematic representation of a polymer and metal connection;
FIG. 9 is a schematic view of laser drilling;
FIG. 10 is a schematic view after the completion of the hole opening;
the drawing in the figure illustrates a cathode plate 1, a photoresist 2, UV light 3, a mask4, an electroplating solution 5, a metal block 6, an anode plate 7, a polymer film 8 and a laser 9.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
As shown in fig. 1:
a preparation method of a composite mask comprises the following steps:
s1: as shown in fig. 2, a photoresist is disposed on the cathode plate, the thickness of the photoresist is 3-30um,
s2: as shown in fig. 3 and 4, a mask hole pattern is formed on the surface of the photoresist, and the excess photoresist is removed by UV light irradiation and development;
s3: as shown in fig. 5, an anode plate is oppositely disposed above the cathode plate, and an electroplating solution is disposed between the cathode plate and the anode plate, resulting in an electroformed metal layer. As shown in FIG. 6, the thickness of the electroformed metal layer is consistent with the thickness of the photoresist. In the present embodiment, the metal layer is ni — the metal layer may also be Fe, co, or a combination with other elements;
s4: as shown in FIG. 7, the polymer film is uniformly coated on the surfaces of the metal layer and the photoresist layer, and the thickness of the polymer film is controlled to be 3-50 um. The polymer is made of a low-thermal expansion coefficient material, and the material of the polymer film layer is selected from polyimide, polypropylene, polyethylene terephthalate or graphene.
And curing and molding the polymer film, specifically, curing and molding the polymer film through laser heat treatment or baking.
S5: as shown in fig. 8, the cathode plate and the photoresist are removed to obtain the polymer film layer with the metal block on the lower surface.
S6: as shown in fig. 9, a Yb: KGW femtosecond laser is used to pulse-drill the cured polymer film layer by femtosecond laser pulses to form a cone-like truncated cone hole with a cone angle, the entrance of the hole is larger than the exit aperture, the entrance of the hole has a size of 1-40um, the cone angle range is controlled to 30 ° -120 °, and the specific structure is shown in fig. 10.
The center wavelength of the femtosecond laser is 1024nm, the average power is 6W, the pulse duration is 190fs, the pulse repetition frequency is 200KHz, the maximum pulse energy is 1mJ, and the taper angle is adjusted by changing the pulse amplitude from 1um to 100 um.
S7: cleaning with hydrofluoroether, laser drilling to leave residue, and drying to obtain the final product.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A preparation method of a composite mask is characterized by comprising the following steps:
the method comprises the following steps:
s1: a photoetching pattern is arranged on the mask plate;
s2: removing part of the photoresist through a photoetching pattern;
s3: electroforming a mask plate, and uniformly coating a polymer film layer on the mask plate;
s4: curing and molding the polymer film layer;
s5: pulse drilling is carried out on the solidified polymer film layer, a cone-like truncated cone hole with a cone angle is formed, the diameter of an inlet of the hole is larger than that of an outlet of the hole, and the range of the cone angle is controlled to be 30-120 degrees;
s6: removing the residual photoresist by using a cleaning solution;
s7: and cleaning the laser opening residues, and drying the mask to finish the preparation.
2. The method for preparing a composite mask according to claim 1, wherein the method comprises the following steps:
and in S4, the polymer film layer is cured and formed through laser heat treatment or baking.
3. The method for preparing a composite mask according to claim 2, wherein the method comprises the following steps: the polymer is made of a low-thermal expansion coefficient material, and the polymer film layer is made of polyimide, polypropylene, polyethylene terephthalate or graphene.
4. The method for preparing a composite mask according to claim 3, wherein the method comprises the following steps:
in S5, drilling is carried out by adopting the femtosecond laser pulse of a Yb KGW femtosecond laser.
5. The method for preparing a composite mask according to claim 4, wherein the method comprises the following steps: the parameters adopted by the Yb: KGW femtosecond laser are that the central wavelength is 1024nm, the average power is 6W, the pulse duration is 190fs, the pulse repetition frequency Yb: KGW femtosecond laser rate is 200KHz, the maximum pulse energy is 1mJ, and the taper angle is adjusted by changing the pulse amplitude from 1um to 100 um.
6. The method for preparing a composite mask according to claim 5, wherein the method comprises the following steps: the size of the inlet aperture of the hole is 1-40um.
7. The method for preparing a composite mask according to claim 6, wherein the method comprises the following steps: the thickness of the polymer film layer is controlled between 5um and 100 um.
8. The method for preparing a composite mask according to claim 7, wherein the method comprises the following steps: the cleaning solution adopts hydrofluoroether.
9. The method for preparing a composite mask according to claim 8, wherein the method comprises the following steps: the polymer film layer is made of polyimide.
10. The method for preparing a composite mask according to claim 9, wherein the method comprises the following steps: the mask is made of Ni, fe and Co.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211030975.XA CN115961314A (en) | 2022-08-26 | 2022-08-26 | Preparation method of composite mask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211030975.XA CN115961314A (en) | 2022-08-26 | 2022-08-26 | Preparation method of composite mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115961314A true CN115961314A (en) | 2023-04-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211030975.XA Pending CN115961314A (en) | 2022-08-26 | 2022-08-26 | Preparation method of composite mask |
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| CN (1) | CN115961314A (en) |
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- 2022-08-26 CN CN202211030975.XA patent/CN115961314A/en active Pending
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