JP3434947B2 - Shower plate - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shower plate used in a CVD vacuum apparatus, and more particularly to a shower plate in which deposits are not easily peeled off during film formation.

[0002]

2. Description of the Related Art Semiconductor products such as LSIs (Large Scale Integrated Circuits), solar cells, and LCDs (Liquid Crystal Displays) are well known in the art as substrates by a CVD (Chemical Vapor Deposition) method in a vacuum apparatus. A-Si (amorphous-silicon), SiOx (silicon oxide), SiNx
It is often manufactured by forming a thin film such as (silicon nitride). Further, there is a problem that fine particles called particles contaminate the substrate during the film formation and short-circuit the circuit, resulting in extremely low product yield.

In response to this, various measures have already been taken, the particles brought into the CVD vacuum apparatus from the outside have been almost solved, and nowadays, measures for particles generated in the CVD vacuum apparatus are required. ing.

FIG. 13 is a schematic vertical sectional view of a plasma CVD vacuum apparatus 10, which is entirely made of stainless steel (SUS43).
0). The vacuum chamber 1 is connected to a vacuum exhaust system (not shown) through an exhaust port 9, and a substrate 3 is attached to a tray 2 as a substrate holder fixed to a jig (not shown) in the vacuum chamber 1, and the vacuum chamber 1 A heater 4 that is inserted from above and that heats the substrate 3 is provided behind the tray 2. Vacuum chamber 1
A shower plate 7 for rectifying the raw material gas and uniformly supplying it to the substrate 3 is attached to the gas disperser 6 following the gas introduction pipe 5 inserted from below. Further, a cylindrical chimney 8 for guiding the source gas toward the substrate 3 is provided from the bottom surface of the vacuum chamber 1 to the gas introduction pipe 5,
It is provided so as to surround the gas disperser 6 and the shower plate 7. Further, an RF power source 18 is connected to the gas introduction pipe 5, and the shower plate 7 functions as a cathode when plasma discharge is performed. Shower plate 7
An earth shield 19 is provided so as to surround the gas disperser 6 which is integral with, and the tray 2 serving as an anode is grounded together with the vacuum chamber 1.

In the film forming operation by the plasma CVD vacuum apparatus 10, first, the vacuum chamber 1 is evacuated to maintain a predetermined vacuum degree, and the heater 4 heats the substrate 3 to maintain a predetermined temperature. Next, a raw material gas, for example, SiH4 (monosilane) is introduced from the gas introduction pipe 5, and high-frequency power is applied by the RF power source 18 after the pressure is constant, so that plasma is generated between the shower plate 7 of the cathode and the tray 2 of the anode. Cause a discharge. As a result, the source gas is excited and decomposed to form a thin film of a-Si on the surface of the substrate 3. At this time, in addition to the target substrate 3,
The thin film components also adhere to structural members such as the shower plate 7, the tray 2, and the chimney 8 near the plasma region. Board 3
Is replaced with a new substrate 3 when the thin film reaches the specified thickness,
The film formation is continued while leaving the various structural members as they are. Therefore, the deposits on various structural members become thicker with the passage of time, and finally peel off to generate particles. Above all, since the source gas is blown from the shower plate 7 toward the substrate 3, the exfoliation of the deposits formed on the shower plate 7 is fatal.

Therefore, the film forming operation is stopped and cleaning is performed before the exfoliation of the deposits occurs. Cleaning is a vacuum chamber 1 has been performed, release air opens, recently often be avoided to release open atmosphere is a gas cleaning. For gas cleaning, an etching gas such as NF ₃ (nitrogen trifluoride) is fed through the gas introduction pipe 5.
Is introduced to generate plasma discharge by applying high-frequency power, and the F radicals, F ions, etc. generated upon excitation are reacted with the deposits to remove them as a gas. The shower plate 7 made of metal and other structural members also react and corrode.

Regarding the prevention of the exfoliation of deposits from the shower plate in the CVD vacuum apparatus, the following method has been proposed and adopted conventionally. One of them is shot blasting that sprays a small diameter steel ball onto the surface of the shower plate, or glass bead blasting (GBB) that sprays a glass ball to clean the surface and at the same time make fine irregularities on the surface. It is a method of increasing the surface area provided to increase the adhesive force of the deposit. However, in addition to insufficient peeling prevention effect due to this, the blasting is repeated many times because it is insufficient, and distortion due to impact heat during blasting may accumulate on the shower plate, resulting in damage. .

Further, after the surface of the shower plate is shot and blasted, a powder of ceramic, such as alumina (aluminum oxide), which has corrosion resistance to the gas for gas cleaning is sprayed to spray the alumina sprayed film.
To increase the adhesive force of the deposit,
There are also attempts to impart corrosion resistance. However, the alumina sprayed film is apt to crack, and the adhesion between the alumina sprayed film and the shower plate is insufficient, so that the alumina sprayed film needs to be replaced at a relatively early stage.

The film formation temperature in the CVD vacuum apparatus
Depends on the film forming material. For example, in the plasma CVD method
Therefore, when a-Si or SiN _x is formed,
It is carried out at a temperature of 300 ° C., the formation of the SiO _X 300
It is carried out at a temperature of ~ 400 ° C. In addition, the low pressure CVD method
The SiO _x film is formed at a temperature near 400 ° C.
It That is, aluminum deposition of SiO _X (melting point;
If you use a shower plate of 660 ℃, it is easily deformed by heat.
However, it is difficult to replace the
Requires a power plate, while aluminum is a machine
It is easy to process and has an aluminum oxide film or foil on the surface.
Forming aluminum nitride film to form cleaning gas, eg
For example, there is an advantage that it is easy to give corrosion resistance to NF ₃ gas.
There is . Therefore, the heat resistance of the good Sha of aluminum
War plates are desired .

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a shower plate in which deposits are not easily peeled off during film formation by CVD.

[0011]

[Means for Solving Problems] The above objectives are " CV
Installed in the vacuum device for D, the raw material gas for film formation is applied to the substrate surface.
Is equipped with a large number of
In shower plate, attached to the shower plate
In order to prevent the exfoliation and falling of the film material
Almost all of the surface of the shower plate facing the substrate surface
1 mm wide at a pitch of 2 mm in both the vertical and horizontal directions,
A groove with a depth of 2 mm was dug, and the convex and concave parts formed and
And the convex portion is formed as a curved surface with R = 0.5 mm.
And a shower plate , which is characterized by

For the above-mentioned purpose, in a vacuum apparatus for CVD
Installed on the substrate to uniformly supply the raw material gas for film formation to the substrate surface.
A large number of pores for
Unevenness is provided in the vertical and horizontal directions on almost the entire facing surface.
The shower plate that is arranged in a row
The shower plate is an inorganic fiber containing ceramic fibers.
The mat-shaped molding of
With fiber-reinforced aluminum solidified by impregnating molten metal
In the shower plate, which is characterized by being manufactured
Is achieved . Moreover, the above-mentioned purpose is the vacuum equipment for CVD
It is installed inside the chamber and supplies the source gas for film formation uniformly to the substrate surface.
The substrate surface is provided with a large number of pores for supplying
Unevenness in the vertical and horizontal directions on almost the entire surface facing the
On the shower plates arranged in a pitch
The shower plate is a nickel-based corrosion resistant alloy, Ni
Uses nickel, titanium, stainless steel, and steel as base materials
And the surface facing the substrate surface is aluminum or aluminum.
Shower characterized by being coated with an um alloy
Plate .

[0013]

In the shower plate of the present invention, the surface of the shower plate facing the substrate is provided with irregularities arranged at equal pitches in the vertical and horizontal directions. Even if the film is thickened, it is difficult to peel it off, and therefore particles that contaminate the substrate are not easily generated. Further, the shower plate of the present invention is
Facing the substrate surface of the fiber-reinforced aluminum with machine fibers
Since the surface has irregularities, it is possible to
Even if a thin film component is attached and the film becomes thicker, it is difficult to peel off and high
It does not deform even at the film forming temperature . The shower of the present invention
The plate faces at least the substrate surface of the refractory metal
Recessed by coating the surface with aluminum or aluminum alloy
Since the projections are formed, a thin film is formed during film formation.
Even if a thick film is formed due to the adhesion of the film, it is difficult to peel it off, and the film formation temperature
It does not deform even in degrees .

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A shower plate according to an embodiment of the present invention will be described below with reference to the drawings.

(First Embodiment) FIG. 1 is a schematic plan view of a shower plate 17 of a first embodiment corresponding to the shower plate 7 of the plasma CVD vacuum apparatus 10 shown in FIG. 13, and is formed on the surface described later. Since the irregularities made are minute, they are omitted for simplicity. 2 shows the shower plate 17
FIG. 3 is a partially enlarged plan view of FIG.
[3] It is sectional drawing of a line direction. That is, the shower plate 17 is made of an aluminum plate (A5052) having an outer diameter of 350 mm and a thickness of 10 mm, and a groove with a width of 1 mm is dug on one surface of the end plate at a pitch of 2 mm in the vertical and horizontal directions using an end mill. By rounding the portion M and the concave portion N with R = 0.5 mm, an uneven surface having a concave / convex depth of 2 mm is formed,
Furthermore, with a pitch of 20 mm on the entire surface except the peripheral portion, and the convex portion M
The holes 13 are opened to form pores 13 having a diameter of 0.4 mm. That is, as shown in FIG. 2, the protrusions M as columnar protrusions are arranged in a grid pattern. Further, a bolt hole 12 having a diameter of 8.5 mmφ is provided in the peripheral portion together with the spot facing.

This shower plate 17 is replaced with the shower plate 7 of the vacuum apparatus 10 for plasma CVD shown in FIG.
Instead, the concavo-convex surface was set to face the substrate 3, SiH4 (monosilane) was introduced as a source gas, and a-Si (amorphous-silicon) was formed under the following conditions. Substrate temperature 280 ° C. RF power 360 W (Pr = Ow) RF frequency 13.56 MHz (intermittent application every 500 msec) Source gas inflow rate 400 sccm (standard state cc number per minute) Film formation pressure 0.65 Torr Film formation on the substrate Speed about 1100Å / min. By repeating a cycle of 15 minutes of stopping the RF discharge and the introduction of the raw material gas for 10 minutes for 1 hour of film formation, an a-Si film component having a thickness of 110 μm adhered to the uneven surface of the shower plate 17, but a-Si adhered matter No peeling was observed. It is considered that the peeling stress of the deposit is dispersed and relaxed by the uneven surface.

(First Comparative Example) The aluminum plate (A5052) used in the first example was provided with pores of 0.4 mmφ at a pitch of 20 mm without providing irregularities on the surface thereof, and the entire surface thereof was glass bead blasted. The treated flat shower plate was set in the plasma CVD vacuum apparatus 10, and a-Si film formation was performed under the same conditions as in the first embodiment. In this flat shower plate, when an a-Si film component having a thickness of about 10 μm was attached to the surface, the a-Si deposit was peeled off.

(Second Comparative Example) The aluminum plate (A5052) used in the first example was provided with fine pores having a diameter of 0.4 mmφ at a pitch of 20 mm without providing irregularities on the surface, and avoiding the fine pores on the surface. Alumina sprayed to a thickness of about 200μ
The shower plate on which the alumina coating of m was formed was set in the plasma CVD vacuum device 10, and a-Si was formed under the same conditions as in the first embodiment. This alumina-coated flat shower plate also has a surface with a thickness of about 10 μm
The a-Si deposit was peeled off when the -Si film component was deposited.

(Second Embodiment) An aluminum plate (A5052) having an outer diameter of 350 mm and a thickness of 10 mm is used as a material similarly to the shower plate 17 of the first embodiment, and one end of the aluminum plate (A5052) having a pitch of 2 mm and a width of 1 mm is used. The groove M is dug in the vertical direction and the horizontal direction, and R = 0.5 is formed in the convex portion M and the concave portion N that are formed.
With a roundness of mm, the uneven surface with a depth of 2 mm is first
It was manufactured in the same manner as in the example.

However, corresponding to FIGS. 4 and 3 which are plan views corresponding to FIG. 2 of the first embodiment, and [5]-of FIG.
[5] With reference to FIG.
The 4 mmφ pores 23 are the shower plate 1 of the first embodiment.
Different from 7, the shower plate 27 was formed by opening it in the center of each recess N.

This shower plate 27 is plasma CV
Set in the vacuum chamber 1 of the D vacuum device 10,
When an a-Si film was formed under the same conditions as in the example, the a-Si deposits did not peel off at a thickness of about 100 μm, and some peeling was recognized at the time of 110 μm. That is, although slightly inferior to the shower plate 17 of the first embodiment, the a-Si deposits are much less likely to be peeled off than the shower plates of the first conventional example and the second conventional example in which the surface is not provided with irregularities. It was a thing.

The contraction stress of the a-Si deposit acts as a force that causes peeling in the recess N in both the shower plate 17 of the first embodiment and the shower plate 27 of the second embodiment. Since the pores 23 are opened in the recess N of the shower plate 27 of the second embodiment, it can be considered that even a slight opening makes it easy for the a-Si deposit to peel off.

(Third Embodiment) The surface of the shower plate 17 of the first embodiment is anodized by the anodizing device 21 shown in FIG. 6, and aluminum oxide (alumite) is applied to the surface.
Layers were formed. By immersing the shower plate 17 together with the cathode plate 24 in the 20% sulfuric acid 28 stretched in the battery case 29 and connecting to the DC power source 25 having a voltage of 400 V, the aluminum (A5052) of the shower plate 17 is anodized and the surface thereof is exposed. An aluminum oxide (alumite) layer is formed. When an aluminum oxide layer having a thickness of about 20 μm was obtained, the aluminum oxide layer was taken out of the battery case 29, thoroughly washed with water, and then dried at a temperature of 500 ° C.

The shower plate 17 'having the aluminum oxide layer formed on the surface obtained as described above is set in the vacuum chamber 1 of the plasma CVD vacuum apparatus 10 used in the first embodiment, and the first A under the same conditions as in the example
-Si film was formed. Similar to the shower plate 17 of the first embodiment, this shower plate 17 ′ has a 110 μm thick a-Si deposit on the uneven surface during film formation.
The peeling was not observed.

Separately, a shower plate 17 'having an aluminum oxide layer formed on the surface thereof is prepared, immersed in dilute hydrofluoric acid (HF), taken out, sufficiently washed with water, and then heated at a temperature of 500.degree. Most of the surface side of the aluminum oxide layer was converted into an aluminum fluoride layer by using the shower plate 17 ″. The aluminum fluoride layer formed between the aluminum base material and the aluminum oxide layer had a strong adhesion. Of course, the aluminum oxide layer may be completely converted into an aluminum fluoride layer.

As with the shower plate 17 of the first embodiment, the shower plate 17 "having the aluminum fluoride layer formed on the surface as described above also has a-Si deposit on the uneven surface during the deposition of a-Si. Was 110 μm thick, no peeling occurred.

Shower plate 17 'having an aluminum oxide layer formed on the surface of shower plate 17,
Shower plate 1 with an aluminum fluoride layer formed
7 "shows excellent corrosion resistance to plasma cleaning using NF3 gas, for example.

(Fourth Embodiment) Instead of the aluminum plate used in the first embodiment, a stainless steel plate (SUS430) having an outer diameter of 350 mmφ and a thickness of 10 mm is used as a material, and this is machined to obtain the shower of the first embodiment. A shower plate having an uneven surface, pores and bolt holes having the same shape as the plate 17 was prepared. The SUS shower plate provided with the uneven surface was set in the vacuum chamber 1 of the plasma CVD vacuum apparatus 10 and used for film formation of a-Si, as in the case of the first embodiment. Si deposit is 100 μm
No sign of peeling was observed even if formed above.

(Fifth Embodiment) Both aluminum and aluminum alloy have relatively low melting points and poor heat resistance, so that they are difficult to use at temperatures of 300 ° C. or higher. Therefore,
Nickel-based corrosion resistant alloy (trade name Hastelloy C22) having high heat resistance is used as a base material, and aluminum (A50
The shower plate 37 covered with 52) was produced by a so-called molten metal forging method. FIG. 7 is a partial sectional view showing an example of the manufacturing method.

Referring to FIG. 7A, a plate material 34 made of a nickel-base corrosion-resistant alloy having holes 33 ′ which finally become the pores 33 is laid on the bottom surface of a forging container 36 and has a thickness of 1.3 mm (A5052). ) The sheet is placed on the sheet 35a, and the upper lid 39 having the pressing piston 38 is tightened by a fastener (not shown). Next, the forging container 36 is heated to a temperature of 500 ° C. together with the upper lid 39, and the temperature is set to 920 ° C. from an injection port not shown
Aluminum in a molten state after being heated to (A5052)
35b is poured and pressed by the piston 38 with a force of 1000 tons. By this operation, molten aluminum 35
b penetrates into every place between the plate material 34 of the nickel-based corrosion resistant alloy and the aluminum sheet 35a, and is integrated with the aluminum sheet 35a. By cooling while pressing and taking out from the forging container 36, a plate material 34 of nickel-base corrosion-resistant alloy entirely covered with aluminum 35 as shown in FIG. 7B is obtained. This is machined with an end mill, and the shower plate 1 of the first embodiment is provided on one side thereof.
7, a shower plate 37 in which unevenness is formed in the same shape as that of FIG. 7 and pores 33 are formed to cover the entire surface of a nickel-base corrosion-resistant alloy plate 34 having heat resistance strength as shown in FIG. obtain. This shower plate 37
Was set in place of the shower plate 7 of the plasma CVD vacuum device 10 of FIG. 13 and used for forming a-Si under the same conditions as in the first embodiment. This shower plate 37
Is the same as that of the shower plate 17 of the first embodiment.
No peeling occurred even when the deposit was formed to a thickness of 100 μm or more.

Furthermore, the shower plate 3 which is separately prepared
7 was anodized by the anodizing device 21 of FIG. 6 used in the third embodiment to form a shower plate 37 ′ of an aluminum-coated nickel-base corrosion-resistant alloy on the surface of which an aluminum oxide layer having a thickness of about 20 μm was formed. This shower plate 37 'is also the shower plate 1 of the first embodiment.
As in No. 7, a- formed on the uneven surface during the formation of a-Si
No peeling occurred even when the Si deposit exceeded 100 μm in thickness.

(Sixth Embodiment) In place of the nickel-base corrosion-resistant alloy plate material 34 used in the fifth embodiment, a mat-shaped molded product 44 of alumina fiber is used, and the same method as shown in the partial sectional view of FIG. 8 is used. The shower plate 47 was created. That is, a fiber-reinforced aluminum plate was prepared by impregnating a molten aluminum (A5052) 45 into a mat-shaped molded product 44 of alumina fibers, and then cooling and solidifying the aluminum product while maintaining pressure. Further, this is machined to form irregularities having the same shape as that of the shower plate 17 of the first embodiment on one surface thereof, and the pores 43 are bored, and the fiber-reinforced aluminum having heat resistance strength shown in FIG. Shower plate 4
Got 7.

Shower plate 47 thus obtained
Also, like the shower plate 17 of the first embodiment, a-S
No peeling occurred even when the a-Si deposit formed on the uneven surface during film formation of i exceeded 100 μm in thickness.

A shower plate 47, which is separately prepared,
Was anodized by the anodizing device 21 used in the third embodiment to form an aluminum oxide layer on the surface to form a shower plate 47 '. This shower plate 47 '
Also has a thickness of 100 μ formed on the uneven surface during deposition of a-Si.
No peeling was observed for a-Si deposits of m or more.

(Seventh Embodiment) A nickel-base corrosion-resistant alloy plate 54 is used as a base material, and this is made of aluminum (A5052).
A shower plate 57 covered with 55 was produced by a thermocompression bonding apparatus 61 as shown in the schematic sectional view of FIG. In the thermocompression bonding apparatus 61, a vacuum pump 66 is connected to a high-pressure container 62 via a valve 65, and an argon gas cylinder 68 is connected via a valve 67. Further, a heater 69 for heating the inside is wound around the high-pressure container 62, and a pressure gauge 64 is attached.

Aluminum (A5052) plate material 55
a, and the shower plate 1 of the first embodiment in advance
Aluminum having the same shape as that of A7 (A50
The concavo-convex plate material 55b of 52) and the nickel-base corrosion-resistant alloy plate material 54 are brought into close contact with each other, housed in the high-pressure container 62, and mounted on a pedestal (not shown). Close the high pressure container 62 and close the valve 6
After opening 5 and evacuating with vacuum pump 66, valve 65
Is closed. Then, the valve 67 is opened, argon gas is introduced from the argon gas cylinder 68, and the valve 67 is closed. By repeating such an operation to completely replace the inside of the high-pressure container 62 with argon gas, the heater 69 heats the inside of the high-pressure container 62 to a predetermined temperature, and the pressure of the argon gas in the high-pressure container 62 is set to a predetermined value. Increase to value.

By the above operation, the nickel-base corrosion-resistant alloy plate 54, the aluminum plate 55a, and the uneven plate 5
5b is thermally expanded and pressed from all directions by the pressure of the argon gas to be firmly pressure-bonded to be completely integrated. After cooling the high-pressure container 62, it is taken out to the outside and the convex portion M
By forming the pores 53 that open at the bottom, the nickel-based corrosion-resistant alloy plate is used as the base material and the entire surface is made of aluminum (A505
The shower plate 57 covered with 2) is obtained. The shower plate 57 and the shower plate 57 'having an aluminum oxide layer formed on the surface thereof by anodizing the shower plate 57 are both the shower plate 1 in the first embodiment.
As in No. 7, a- formed on the uneven surface during the formation of a-Si
No peeling occurred even when the Si deposit exceeded 100 μm in thickness.

Although the respective embodiments of the present invention have been described above, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.

For example, although the disk-shaped shower plate has been described in each of the embodiments, the rectangular shower plate of the present invention is applied to a plasma CVD apparatus or the like for a rectangular glass substrate for LCD. .

In each of the embodiments, the shower plate of the present invention was applied to the plasma CVD vacuum device 10 for forming a thin film of a-Si on the substrate 3, and its effect was shown. Can be applied not only to the film formation of a-Si but also to a plasma CVD apparatus for forming various thin films such as SiOx, SiNx and the like.

Further, in each of the embodiments, a groove M having a width of 1 mm and a depth of 2 mm is formed at a pitch of 2 mm in both the vertical and horizontal directions on the surface of the shower plate facing the substrate, and the convex and concave portions M are formed. Concavities and convexities were formed by using the concave portion N as a curved surface with R = 0.5 mm. Since the concavities and convexities disperse and relieve the peeling stress of the adhered matter, the shape and size of the concave and convex parts are large in the essential peeling stress of the adhered matter. It may be decided according to the degree, and cannot be determined in a general way.

In each of the embodiments, the convex portion M and the concave portion N of the uneven surface are curved surfaces with R = 0.5 mm.
As shown in FIG . 10, which is a partial plan view corresponding to FIG. 2, and in FIG. 11, which corresponds to FIG. 3 and is a cross-sectional view taken along the [11]-[11] line in FIG. ,
The shower plate 77 having an uneven surface provided with the recess Q may be used. In this case, pores 73 that open to the convex portion P are formed.

In the fourth embodiment, the shower plate is made of stainless steel (SUS430).
Other nickel-based corrosion resistant alloys and nickel, titanium,
It may be made of other metals.

In each of the examples except the fourth example, aluminum containing magnesium (A505
Although 2) is used, it goes without saying that it may be aluminum containing magnesium and silicon (A6061) or pure aluminum (A1052).

Although aluminum is reinforced with alumina fiber in the sixth embodiment, glass fiber, mineral fiber, or metal fiber may be used instead of alumina fiber.

Further, in the fifth and seventh embodiments, the shower plates 37 and 57 in which the entire surface of the nickel-base corrosion-resistant alloy is coated with aluminum were produced, but the coating is not necessarily required to be the entire surface. During film formation by plasma CVD, thin film components are likely to adhere to the surface near the plasma region, particularly the surface facing the substrate. Therefore, as shown in the partial cross-sectional view of FIG. 12, the nickel-based corrosion-resistant alloy plate 84 is made to face the substrate. The shower plate 87 may be formed by covering one surface with aluminum 85, forming irregularities on the aluminum 85, and then forming pores 83. Furthermore, an aluminum oxide layer or an aluminum fluoride layer may be formed on the surface thereof. In a similar sense, FIG.
In the anodizing device 21 described above, when the aluminum oxide layer is formed on the aluminum shower plate 17, for example, the aluminum oxide layer may be formed only on the surface of the portion where the pores and the irregularities are formed. Of course, the same applies to the aluminum fluoride layer.

Further, in each of the embodiments, the pores for blowing out the raw material gas are formed at a pitch of 20 mm, but this pitch can be changed to an optimum pitch according to the film forming conditions and the film forming conditions.

Further, although the case where the shower plate is applied to the plasma CVD apparatus is taken up in each of the embodiments, the shower plate of the present invention can be applied to the thermal CVD apparatus as well.

[0049]

As described above, according to the shower plate of the first aspect of the present invention, even if the film-forming material deposit formed on the uneven surface of the shower plate during the film formation by CVD is thickened, it is peeled off. It is difficult to do so (compared with the conventional example, which has a thickness of about 10 μm, it does not peel off even with a thickness of about 100 μm), so the time that can be used for film formation from the cleaning to the cleaning in the CVD vacuum device is extended. It is allowed to increase the稼dynamic <br/> rate.

According to the shower plate of claim 3,
Made of fiber reinforced aluminum with machine fibers and has heat resistance
Therefore, the shower plate when the film formation temperature is high
Can be used as, and for cleaning the surface
Can be modified to have NF ₃ gas corrosion resistance
Is. According to the shower plate of claim 5, heat resistance
At least the surface of the metal plate that faces the substrate
Coated with um or aluminum alloy
Runode, as a shower plate of the case the film forming temperature is high
Can be used, and the surface is NF ₃ for cleaning.
It is also possible to modify gas to have corrosion resistance.
It

[Brief description of drawings]

FIG. 1 is a schematic plan view of a shower plate according to a first embodiment.

FIG. 2 is a partially enlarged plan view of FIG.

3 is a sectional view taken along line [3]-[3] in FIG.

FIG. 4 is a partially enlarged plan view of the shower plate according to the second embodiment.

5 is a cross-sectional view taken along line [5]-[5] in FIG.

FIG. 6 is a schematic cross-sectional view of an anodizing device.

FIG. 7 is a partial cross-sectional view showing the manufacturing process of the shower plate of the fifth embodiment.

FIG. 8 is a partial sectional view of a shower plate according to a sixth embodiment.

FIG. 9 is a partial sectional view of a thermocompression bonding apparatus.

FIG. 10 is a partially enlarged plan view of a shower plate having different concave and convex shapes as a modification.

11 is a sectional view taken along line [11]-[11] in FIG.

FIG. 12 is a partial cross-sectional view of a single-sided covered shower plate as a modified example.

FIG. 13 is a schematic vertical sectional view of a vacuum apparatus for plasma CVD.

[Explanation of symbols]

1 vacuum chamber 7 shower plate 10 Vacuum equipment for plasma CVD 12 bolt holes 13 pores 17 Shower plate of the first embodiment 21 Anodizing device 33 pores 34 Nickel-based corrosion resistant alloy plate 35 coated aluminum 37 Shower plate of the fifth embodiment M convex part N recess

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Susumu Arai 2500 Hagizono, Chigasaki City, Kanagawa Prefecture Japan Sky Technology Co., Ltd. (72) Inventor Yasuo Shimizu 2500, Hagien, Chigasaki City, Kanagawa Japan Sky Technology Co., Ltd. 72) Inventor Masajun Hirata 2500 Hagizono, Chigasaki City, Kanagawa, Japan, Japan Sky Technology Co., Ltd. (72) Inventor Katsuhiko Mori, 2500, Hagien, Chigasaki City, Kanagawa Japan, Sky Technology Co., Ltd. 2,500 Hagizono, Chigasaki-shi, Japan Within Japan Sky Technology Co., Ltd. (72) Inventor Hiroo Kozaki 2500 Hagizono, Chigasaki-shi, Kanagawa Japan Sky Technology Co., Ltd. (72) Hidenori Suwa 2500 Hagien, Chigasaki-shi, Kanagawa Japan Shin Sky Technology Co., Ltd. (56) Reference JP-A-6-5522 (JP, A) JP-A-6-291057 (JP, A) JP-A-7-166362 (JP, A) JP-A-7-201762 (JP, A) JP-A-6-298596 (JP, A) JP-A-6-349810 (JP, A) Actual development 2-113333 (JP, U) Actual Kaihei 2-131550 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/205 C23C 16/455 H01L 21/31

Claims (6)

(57) [Claims] 1. A film forming apparatus, which is installed in a CVD vacuum apparatus for film formation.
A large number of pores for uniformly supplying the raw material gas of
In the shower plate provided in the
Peeling off and dropping off film forming material adhered to the war plate
In order to suppress, on the substrate surface of the shower plate
2 mm in both the vertical and horizontal directions on almost the entire facing surface
A groove with a width of 1 mm and a depth of 2 mm is dug and formed at a pitch.
The convex portion and the convex portion of the formed unevenness are curved surfaces of R = 0.5 mm
Shower plate characterized by being formed by . 2. The shower plate to the substrate surface
Used when forming amorphous silicon (a-Si)
The shower plate according to claim 1, which is one . 3. A film is installed in a CVD vacuum apparatus for film formation.
A large number of pores for uniformly supplying the raw material gas of
Is provided on almost the entire surface facing the substrate surface.
The unevenness is arranged in the vertical and horizontal directions at an equal pitch.
The shower plate,
Mat-shaped molded product of inorganic fibers containing ceramic fibers
Impregnated with molten aluminum or aluminum alloy
Manufactured from solidified fiber-reinforced aluminum
Shower plate characterized by . 4. At least the fiber-reinforced aluminum
On the surface of the portion where the unevenness is provided including the pores
Aluminum oxide layer or aluminum oxide
Aluminum fluoride layer is formed with or without
The shower plate according to claim 3, wherein 5. A film is installed in a vacuum apparatus for CVD for film formation.
A large number of pores for uniformly supplying the raw material gas of
Is provided on almost the entire surface facing the substrate surface.
The unevenness is arranged in the vertical and horizontal directions at an equal pitch.
The shower plate,
Corrosion resistant alloy whose base is nickel, nickel, titanium, stainless steel
Tensless steel, or steel as a base material, at least the pores
Including aluminum and aluminum.
Made of aluminum-coated metal such as aluminum or aluminum alloy
Shower plate characterized by being made . 6. The coated aluminum of the aluminum coated metal
Aluminum oxide layer or aluminum oxide on the surface of Ni
Aluminum fluoride with or without intervening
The shower play according to claim 5, wherein a shower layer is formed.
To .