JP5254277B2 - Manufacturing method of parts for vacuum film forming apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing a component for a vacuum film forming apparatus used in a vacuum film forming apparatus such as a sputtering apparatus or a CVD apparatus.

In semiconductor components, liquid crystal components, and the like, various wiring films and electrodes are formed by using a film forming method such as a sputtering method or a CVD method. Specifically, a conductive metal such as Al, Ti, Mo, W, Mo—W alloy, MoSi ₂ , etc. by applying a sputtering method, a CVD method, or the like on a deposition substrate such as a semiconductor substrate or a glass substrate. A thin film of a conductive metal compound such as WSi ₂ is formed and used as a wiring film or an electrode.

  By the way, in the vacuum film forming apparatus such as the sputtering apparatus and the CVD apparatus used for forming the above-described wiring film, various components arranged in the apparatus are formed during the film forming process on the Si substrate or the glass substrate. However, it is inevitable that the film forming material adheres and accumulates. The film forming material adhering to and depositing on such a component causes dust generation by peeling from the component during the film forming process. When such dust is mixed in the film on the film formation substrate, wiring defects such as short-circuiting and opening are caused after the wiring is formed, resulting in a decrease in product yield.

  For this reason, in the conventional vacuum film forming apparatus, for example, a Cu sheet having a concavo-convex surface is attached to the surface of the component, and the adhesion of the adhered material is prevented by peeling off the attached film forming material. Dust prevention measures such as are taken. Patent Document 1 proposes that all or part of the components of the film forming apparatus are formed of the same material as the film forming material, and prevents peeling based on the difference in thermal expansion between the component and the film forming material. Yes.

  Among conventional dust prevention measures, the method of attaching a Cu sheet or the like cannot be continuously attached to a part where the shape of a part is greatly changed or a part that is changing in a complicated manner. The sheet is cut and pasted to the parts discontinuously by spot welding or the like. For this reason, there is a portion without a Cu sheet, or a smooth cut surface is exposed, and if a film forming material adheres to such a portion, peeling easily occurs, so dust can be sufficiently prevented. Can not.

  Further, in the sputtering apparatus, when a Cu sheet is applied to a peripheral part of a target as a film forming material, the Cu sheet may be simultaneously sputtered due to the influence of plasma and may be incorporated as an impurity into the film. Therefore, the Cu sheet cannot be applied to all parts to which the film forming material adheres.

  On the other hand, when all or part of the components of the film forming apparatus are formed of the same material as the film forming material, forming all of the components with the film forming material may cause deterioration in properties such as component strength and increase the cost of the components. There are problems such as. Further, when a film of a film forming material is formed on the surface of a component, there is a problem that the film itself is peeled off depending on the film forming method.

  In particular, in recent semiconductor devices, in order to achieve a high degree of integration such as 16M, 64M, and 256M, it is required to make the wiring width extremely narrow, such as 0.5 μm and further 0.3 μm. ing. In such a narrowed wiring, even if extremely fine particles (fine particles) having a diameter of, for example, about 0.3 μm are mixed, defective wiring is caused. In addition, the narrowing of the wiring width is of course to increase the wiring density, and in order to increase the manufacturing yield of semiconductor elements and the like having such a high-density wiring, the generation amount of particles itself is greatly reduced. There is a need to.

  For such extremely harsh conditions, the conventional dust prevention measures (particle prevention measures) as described above cannot sufficiently cope with the above-mentioned basic problems, and are highly integrated. At present, the production yield of the manufactured semiconductor elements and the like is extremely low.

  Patent Document 2 describes that a thermal spray film of Al or the like is formed on the surface of the component in order to reduce the amount of gas released from the component. This sprayed film such as Al is not only for the purpose of preventing the generation of particles, etc., but even if a simple sprayed film is used as a measure for preventing the generation of particles, a sufficient effect cannot be obtained. It has the disadvantage of being easy to peel off.

  Further, the above-described problems are not limited to the components of the film forming apparatus. For example, a target that is a film forming source such as a sputtering method or a backing plate for cooling and holding the target is the same as the components of the film forming apparatus. The problem is occurring.

JP-A-63-238263 Japanese Patent Laid-Open No. 61-87861

  An object of the present invention is to provide a method for manufacturing a component for a vacuum film forming apparatus, which can stably and effectively prevent peeling of a film forming material adhered during the film forming process.

  As a result of various studies to suppress the generation of minute particles due to the separation of the deposits from the components of the vacuum film forming apparatus, the present inventors have absorbed the internal stress of the deposits and reduced the stress. It was found that the deposits were effective in suppressing peeling, and the coating formed by the thermal spraying method had a good stress reduction effect.

  However, since spraying is normally performed in the atmosphere, the sprayed film contains gas, moisture, and the like, and an oxide film or the like is generated on the surface of the sprayed film. When a component having such a sprayed film is incorporated in a vacuum film forming apparatus, not only the gas component is released from the component and the degree of vacuum does not increase, but also the release of the gas component, surface oxide film, etc. As a result, the adhering material is peeled off, and the generation of new particles is induced. In addition, when the parts are used in a corrosive atmosphere, the sprayed film itself corrodes to cause generation of particles. In order to improve such a point, it has been found that it is effective to perform degassing by heat treatment in a reducing atmosphere after forming a film by a thermal spraying method.

In the method for producing a vacuum film forming apparatus component of the present invention, the difference in thermal expansion coefficient from the component main body is 10 × 10 ⁻⁶ / K or less on the surface of the component main body of the vacuum film forming apparatus, and A step of forming an Al sprayed film having a surface roughness in the range of 5 to 50 μm in average roughness and a thickness in the range of 50 to 500 μm by an arc spraying method in the atmosphere, and vacuuming the Al sprayed film And a degassing process by heating in, wherein the Al sprayed film after the degassing process is heated from room temperature to 773 K in vacuum for 1 hour, and then held for 1 hour to be released. It is characterized in that an Al sprayed film having a gas residual amount represented by a value measured from a decrease in the degree of vacuum after heating is 5 Torr · cc / g or less.

  According to the method for manufacturing a component for a vacuum film forming apparatus of the present invention, it is possible to provide a component part of a vacuum film forming apparatus capable of stably and effectively preventing peeling of a film forming material attached during the film forming process. Can do. Therefore, by using such a vacuum film forming apparatus component, the amount of particles generated can be greatly reduced, and it is possible to suppress the mixing of particles into a film that causes a defect such as a wiring film. . Further, since the number of cleanings of the vacuum film forming apparatus can be reduced, the running cost can be reduced.

It is sectional drawing which shows the structure of the components for vacuum film-forming apparatuses by embodiment of this invention. It is a figure which shows the gas emission amount under the heating of the components for vacuum film-forming apparatuses compared with the thermal spraying components which are not degassed, and component raw materials. It is sectional drawing which shows the structure of embodiment of the sputtering device to which the vacuum film-forming apparatus of this invention is applied. It is a figure which shows the change of the number of particles at the time of using the sputtering device by the reference example 1 compared with the sputtering device using the thermal spraying component which has not performed the degassing process.

  Hereinafter, embodiments of the present invention will be described. FIG. 1 is a cross-sectional view showing a main configuration of an embodiment of a vacuum film forming apparatus component according to the present invention. In the vacuum film forming apparatus component 1 shown in the figure, a sprayed film 3 made of an Al sprayed film is provided on the surface of a component main body (base material) 2. Although the constituent material of the component main body 2 is not specifically limited, For example, a general stainless material etc. can be used as a constituent material of an apparatus component. Moreover, it is preferable that the sprayed film formation surface 2a of the component main body 2 is previously blasted or the like so as to obtain an anchor effect.

The above-mentioned sprayed film 3 can be formed by applying an arc spraying method, and is appropriately selected and used according to the constituent material and shape of the component body 2 or the sprayed material (coating material). The sprayed film 3 has excellent adhesion to the component main body 2, but in order to prevent peeling from the interface between the component main body 2 and the sprayed film 3 due to the temperature rise during the film forming process, It is preferable to form the sprayed film 3 with a metal material having a difference in thermal expansion coefficient of 10 × 10 ⁻⁶ / K or less.

In order to prevent delamination due to a difference in thermal expansion of the film forming material (adhered matter) adhering to the sprayed film 3, the material forming the sprayed film 3 has a difference in thermal expansion coefficient from the film forming material of 10 × 10 ⁻⁶ / It is preferable that it is K or less. When considering only the relationship with the film forming material, the sprayed film 3 is the same material as the film forming material, and when the film to be formed is an alloy film or a compound film, the film forming material (film forming source) It is desirable to form with at least one metal material that constitutes. By satisfying such a condition, it is possible to prevent peeling based on a difference in thermal expansion of the film forming material attached on the sprayed film 3.

  Such a sprayed film 3 functions as an anti-peeling film for the film-forming material (adhered material) deposited and deposited during the film-forming process. Here, a film forming material adheres and accumulates on the surface of the vacuum film forming apparatus component 1 during the film forming process. If the surface of the component is in a certain uneven state, the thickness of the adhering material is No peeling occurs up to about 20 to 60 μm. However, when it is more than this, the deposits tend to peel off easily. This is because the internal stress acts on the deposit, and the internal stress increases as the thickness increases, and the deposit peels based on the increase in the internal stress. Therefore, in order to prevent peeling of the deposit, it is necessary to reduce the stress by absorbing the internal stress of the deposit. The above-described sprayed film 3 has an action of absorbing the internal stress of the deposit by an internal structure including a large number of pores, and exhibits a good stress reduction effect of the deposit.

  However, a film simply formed by thermal spraying contains gas, moisture, etc., and an oxide film or the like is formed on the film surface. These cause particle generation, film life reduction, vacuum reduction, etc., so after forming a coating by thermal spraying, heat treatment in a reducing atmosphere and degassing treatment, and spraying in the air Remove gas and moisture mixed in.

  That is, the thermal spray film 3 described above is subjected to a degassing process after the thermal spray formation, whereby the residual gas amount is set to 10 Torr · cc / g or less. If the amount of gas remaining in the sprayed film 3 exceeds 10 Torr · cc / g, the deposits may be peeled off due to the release of gas components, corrosion of the sprayed film, etc., and the sprayed film 3 itself may be peeled off. Occurs. In other words, according to the sprayed film 3 having a gas residual amount of 10 Torr · cc / g or less, it is possible to prevent release of gas components, corrosion, and the like, and the above-described stress reduction effect is sufficiently exhibited. Can be stably and effectively prevented. The residual gas amount of the sprayed film 3 is desirably 5 Torr · cc / g or less in order to obtain a better effect.

  Fig. 2 shows the gas emission associated with the heat treatment of the thermal spray degassed parts after the W sprayed film was formed on the surface of stainless steel (SUS 304) by atmospheric spraying and then degassed in hydrogen at 1223K x 1h. It is the result of having measured quantity with the thermal spraying component which has not performed the degassing process. The gas release test is conducted by heating the sample from room temperature to 773K in a specific vacuum for 1 hour, and then confirming the value measured from the decrease in the degree of vacuum during heating and holding for 1 hour. did.

  As can be seen from FIG. 2, the thermal spray degassing part that has been degassed significantly reduces the amount of gas released. The residual gas amount referred to here is a value obtained by measuring the total amount of gas released by heating for 1 hour from room temperature to 773K in a specific vacuum from the decrease in the degree of vacuum after heating. Shall point to. Although the gas remaining amount of the sprayed film 3 can be reduced without performing degassing treatment by applying reduced pressure spraying or the like, the degassing treatment by the heat treatment also has the effect of removing the surface oxide film, etc. Therefore, it shall be carried out after the thermal spray formation.

Since the sprayed film 3 has a complicated surface form based on its formation process, it exhibits good adhesion to the deposit. In particular, anti-stripping effect of the high deposits when the surface roughness of the sprayed coating 3 is in the range of 5~50μm an average roughness R _a is obtained. That is, when the average surface roughness R _a of the thermal spray film 3 is less than 5 [mu] m, a large possibility that deposits are easily separated, while the unevenness of exceeding 50μm sprayed film 3 surface becomes too large, deposits Since pores remain without adhering to the entire sprayed film 3, there is a possibility that the adhering material will be peeled off starting from that. The surface roughness of the sprayed film 3 is more preferably in the range of 10 to 15 μm in terms of average roughness.

  Moreover, in order to obtain the effect of preventing the deposits from being peeled off by the sprayed film 3, it is important to appropriately adjust the film thickness of the sprayed film 3 together with the above-described surface roughness. The thickness is preferably in the range of 50 to 500 μm. That is, as described above, the sprayed film 3 has an effect of reducing the internal stress of the deposit, but the degree of the stress reducing effect varies depending on the thickness, and the thickness of the sprayed film 3 is less than 50 μm. And the stress reduction effect is reduced, and the deposit is easily peeled off. On the other hand, when the thickness exceeds 500 μm, a large internal stress is generated in the sprayed film 3 itself, and the internal stress of the deposit is added to the sprayed film 3 and the peeling easily occurs. The film thickness of the sprayed film 3 is more preferably in the range of 100 to 300 μm where the above-described effects can be obtained more favorably.

The sprayed film 3 is not limited to a film made of a single material. For example, the sprayed film 3 may be formed of two or more layers of different materials. As a specific configuration of the two or more layers of the sprayed film 3, for example, in a part where the sprayed film 3 such as a bent part or a curved part where the part shape greatly changes is easily peeled off, the adhesion to the component main body 2 is high The structure which forms the 1st sprayed film, forms the 2nd sprayed film with high adhesiveness with respect to a deposit | attachment on it, the structure which forms the sprayed film excellent in corrosion resistance on the surface side, etc. are mentioned. Further, when the difference in thermal expansion between the component main body 2 and the film forming material is extremely different, two or more layers of sprayed coatings having different thermal expansion coefficients may be sequentially formed so as to alleviate these thermal expansion differences. When two or more sprayed films 3 are applied, the difference in thermal expansion between them should be 10 × 10 ⁻⁶ / K or less, like the difference in thermal expansion between the sprayed film 3 and the component body 2 or film forming material. Is preferred.

  The vacuum film forming apparatus component of the present invention as described above is used as a component of a vacuum film forming apparatus such as a sputtering apparatus or a CVD apparatus, and may be a part to which a film forming material adheres during the film forming process. For example, the present invention can be applied to various parts. The specific configuration will be described in the following embodiments of the vacuum film forming apparatus.

  Further, in the description of the above embodiment, the vacuum film forming apparatus component has been described. However, the above content is that the residual gas amount formed in the target body and the non-erosion region of the target body is 10 Torr · cc / g or less. A backing plate comprising a thermal spray film, or a backing plate body for holding the target, and a thermal spray film having a residual gas amount of 10 Torr · cc / g or less formed on the surface of the backing plate body The same applies to.

  That is, the gas remaining amount, thermal expansion coefficient, degassing condition, surface roughness, film thickness, and two or more layers of the thermal spray film described in the vacuum film forming apparatus component described above are the non-erosion region of the target body. The present invention is also applicable to a sprayed film having a residual gas amount of 10 Torr · cc / g or less, which is formed on the surface of the backing plate body for cooling and holding the target.

  Next, an embodiment of the vacuum film forming apparatus of the present invention will be described. FIG. 3 is a diagram showing a configuration of a main part of an embodiment in which the vacuum film forming apparatus of the present invention is applied to a sputtering apparatus. Reference numeral 11 denotes a target fixed to a backing plate 12, and this target 11 is a film forming source. Is held by a ring-shaped target outer periphery presser 13 and a center cap 14 that function as a film forming source holding unit. An earth shield 15 is provided below the outer peripheral portion of the target 11, and an upper deposition plate 16 is disposed on the lower outer peripheral side.

  A substrate 17 as a film formation sample is held by a platen ring 18 and a substrate holder 19 as a film formation sample holder so as to face the target 11. A lower protective plate 20 is disposed on the outer peripheral side of the substrate holder 19. These are arranged in a vacuum vessel (not shown). A gas supply system (not shown) for introducing sputtering gas into the vacuum vessel and an exhaust system (see FIG. 2) for exhausting the inside of the vacuum vessel to a predetermined vacuum state. (Not shown). In the figure, 21 is a magnetic field coil.

  In the sputtering apparatus of this embodiment, the target outer periphery retainer 13, the earth shield 15, the platen ring 18, and the substrate holder 19 are combined with the above-described components for the vacuum film forming apparatus of the present invention, that is, the surface has a gas residual amount of 10 Torr · cc / It is comprised with the component 1 for vacuum film-forming apparatuses provided with the sprayed film 3 below g. The specific configuration of the vacuum film forming apparatus component 1 is as described above. Further, in this embodiment, the target 11 and the backing plate 12 are configured by providing the thermal spray film 3 having a residual gas amount of 10 Torr · cc / g or less on the non-erosion region of the target 11 and the surface of the backing plate 12. doing. The configurations of the target 11 and the backing plate 12 are as described above. The sprayed film 3 is formed on a surface to which particles sputtered from the target 11 adhere.

  In such a sputtering apparatus, the film forming material (target 11) sputtered on the surface of the target outer periphery presser 13, the earth shield 15, the platen ring 18, the substrate holder 19, the target 11, the backing plate 12, and the like during the film forming process. However, the exfoliation of the deposit is stably and effectively prevented by the sprayed film 3 on the component surface. The sprayed film 3 itself is also stable and has a long life. As a result, the generation amount of dust and particles, and further, the mixing amount into the film formed on the substrate 17 can be greatly suppressed. Therefore, even a wiring film of a highly integrated semiconductor element such as 16M, 64M, or 256M, that is, a wiring film that forms a narrow and high-density wiring network such that the wiring width is 0.5 μm or less, Since mixing of minute particles (for example, a diameter of 0.2 μm or more) can be significantly suppressed, wiring defects can be greatly reduced.

  In the above-described embodiment, the example in which the target outer periphery presser 13, the earth shield 15, the platen ring 18, the substrate holder 19, the target 11, and the backing plate 12 are configured according to the present invention has been described. It is also effective to configure the upper deposition plate 16, the lower deposition plate 20 and the like with the parts for the vacuum film forming apparatus of the present invention. Furthermore, with regard to other parts as well, the vacuum film forming apparatus component of the present invention functions effectively as long as the deposition material cannot be avoided during the film forming process.

  As described above, the vacuum film forming apparatus of the present invention includes at least one selected from the film formation sample holding unit, the film forming source holding unit, the deposition preventing part, etc., with the vacuum film forming apparatus parts of the present invention. Further, by applying the present invention to the target and the backing plate, the excellent effects as described above can be obtained.

  As described above, the sprayed film in the vacuum film forming apparatus component of the present invention functions effectively on the target other than the apparatus component parts. That is, the outer peripheral portion of the target is not substantially sputtered, and the sputtered particles adhere to such a non-erosion region. Even if such a deposit on the outer periphery of the target peels off, it causes a defect in the wiring film or the like, similarly to the peeling of the deposit from other components. Accordingly, by previously forming the sprayed film according to the present invention in the non-erosion region of the target that is not substantially sputtered, it is possible to prevent a wiring defect or the like due to the peeling of the deposit.

  In the above embodiment, an example in which the vacuum film forming apparatus of the present invention is applied to a sputtering apparatus has been described. However, other than this, vacuum film forming such as a vacuum deposition apparatus (including ion plating, laser ablation, etc.), a CVD apparatus, etc. The present invention can also be applied to an apparatus, and the same effect as the above-described sputtering apparatus can be obtained.

  Next, specific examples of the present invention will be described.

Reference example 1
As a target outer periphery presser 13, an earth shield 15, a platen ring 18, a substrate holder 19, an upper deposition plate 16 and a lower deposition plate 20 of the sputtering apparatus shown in FIG. After forming the Ti sprayed film 3 having a thickness of 200 μm, a part subjected to degassing treatment by heat treatment at 576 K × 1 h in vacuum was used to constitute a magnetron sputtering apparatus. Gas remaining amount in the sprayed Ti film after degassing is 0.9Torr · cc / g, and the surface roughness of the sprayed Ti film was 12μm in average roughness R _a.

A high-purity Ti target was set in this magnetron sputtering apparatus, and magnetron sputtering was performed to form a TiN thin film on the 6-inch wafer by introducing Ti and N ₂ gases. The number of particles (dust) having a diameter of 0.3 μm or more on the TiN thin film thus obtained was measured. Such an operation was continuously performed, and the change in the number of particles was investigated. The result is shown in FIG.

  In addition, each part similar to the above reference example is formed as a part of Comparative Example 1 without forming a Ti sprayed film having a thickness of 200 μm on the surface of the base material made of SUS 304 by a plasma spraying method. Thus, a magnetron sputtering apparatus was configured. When this magnetron sputtering apparatus was evacuated, the amount of gas released from the parts was so large that sputtering could not be performed, and the degree of vacuum at which sputtering could be performed was reached only after the chamber was baked for a long time. Next, the change in the number of particles on the TiN thin film was examined in the same manner as in Reference Example 1. The results are also shown in FIG.

  As is clear from FIG. 4, the magnetron sputtering apparatus according to the reference example 1 has a stable particle generation amount of up to 2000 charges, whereas the magnetron sputtering apparatus according to the comparative example 1 has a large particle generation amount from the beginning. An increase in particles due to peeling of the Ti sprayed film was observed at about 800 charges. From these, it was confirmed that the generation of particles can be effectively and stably prevented by the processing of the example.

Reference example 2
First, plasma spraying is performed on the surface of a base material made of SUS 304 as a target outer periphery presser 13, an earth shield 15, a platen ring 18, a substrate holder 19, an upper deposition plate 16 and a lower deposition plate 20 of the sputtering apparatus shown in FIG. A Ni—Ti alloy sprayed film having a thickness of 50 μm is formed by a method, and then a Ti sprayed film having a thickness of 150 μm is formed, and then a degassed part subjected to a heat treatment of 573 K × 1 h in a vacuum is used. Thus, a magnetron sputtering apparatus was configured. The amount of gas remaining in the sprayed film after degassing treatment was 1 Torr · cc / g, and the surface roughness of the outermost Ti sprayed film was 15 μm in average roughness.

  A high-purity Ti target was set in this magnetron sputtering apparatus, magnetron sputtering was performed, and changes in the number of particles (dust) were examined in the same manner as in Reference Example 1. As a result, as in Reference Example 1, the amount of generated particles was stably small up to about 2000 charges. Further, in the case of the treatment of Reference Example 2, the sprayed film was highly stable with respect to the bent portion and the like, and peeling at such a portion did not occur, and an extremely good result was obtained.

Reference example 3
As a target outer periphery presser 13, an earth shield 15, a platen ring 18, a substrate holder 19, an upper deposition plate 16 and a lower deposition plate 20 of the sputtering apparatus shown in FIG. After forming a W sprayed film having a thickness of 200 μm, a magnetron sputtering apparatus was configured using parts that were degassed by heat treatment in hydrogen at 1273 K × 1 h. The amount of gas remaining in the W sprayed film after degassing is 2.6 Torr · cc / g, and there is no oxide film on the surface of the W sprayed film, and the surface roughness is 8 μm in average roughness. there were.

  A Mo—W target was set in this magnetron sputtering apparatus, magnetron sputtering was performed, and changes in the number of particles (dust) were examined in the same manner as in Reference Example 1. As a result, the amount of generated particles was stably small up to about 1500 charges. Further, the generated amount itself was about 1/3 compared with the case of using the W sprayed part (Comparative Example 2) that was not degassed.

Example 1
As the target outer periphery retainer 13, the earth shield 15, the platen ring 18, the substrate holder 19, the upper deposition plate 16 and the lower deposition plate 20 of the sputtering apparatus shown in FIG. 3, the surface of the SUS 304 base material is arc sprayed. After forming a 250 μm thick Al sprayed film, a magnetron sputtering apparatus was configured using parts that were degassed by heat treatment at 623 K × 1 h in vacuum. The residual gas amount in the Al sprayed film after the degassing treatment was 3.2 Torr · cc / g, and the surface roughness of the Al sprayed film was 25 μm in average roughness.

A high-purity tungsten silicide (WSi _2.8 ) target was set in this magnetron sputtering apparatus, magnetron sputtering was performed, and changes in the number of particles (dust) were examined in the same manner as in Reference Example 1. As a result, as in Reference Example 1, the amount of generated particles was stably small up to about 2000 charges. Further, the generated amount itself was about ½ compared to the case of using an Al sprayed part (Comparative Example 3) that was not degassed.

Comparative Example 4
As a target outer periphery presser 13, an earth shield 15, a platen ring 18, a substrate holder 19, an upper deposition plate 16 and a lower deposition plate 20 of the sputtering apparatus shown in FIG. After forming a W film having a thickness of 20 μm (Comparative Example 4), a magnetron sputtering apparatus was configured using parts that were degassed by heat treatment at 773 K × 1 hr in vacuum. The surface roughness of the W film was 0.5 μm in average roughness.

A high-purity tungsten silicide (WSi _2.8 ) target was set in this magnetron sputtering apparatus, magnetron sputtering was performed, and the change in the number of particles (dust) was examined in the same manner as in Reference Example 1. The tungsten silicide film was peeled off and the number of particles (dust) was greatly increased.

Reference example 4
As a target outer periphery presser 13, an earth shield 15, a platen ring 18, a substrate holder 19, an upper deposition plate 16 and a lower deposition plate 20 of the sputtering apparatus shown in FIG. A Ti sprayed film having a thickness of 250 μm was formed. Further, high-purity Ti is used as the target 11 and Cu is used for the backing plate 12. The plasma spraying method is similarly applied to the non-erosion region of the outer peripheral portion of the high-purity Ti target 11 and the surface of the Cu backing plate 12. A Ti sprayed film having a thickness of 250 μm was formed.

  Each part, target, and backing plate on which these Ti sprayed films are formed are degassed by subjecting them to a heat treatment of 575 K × 1 h in a vacuum, and using these degassed ones, a magnetron sputtering apparatus, a target, and a backing plate Configured. The residual gas amount in the Ti sprayed film after the degassing treatment was 1.2 Torr · cc / g, and the surface roughness of the Ti sprayed film was 17 μm in average roughness.

  After setting the high-purity Ti target 11 held on the Cu backing plate 12 in the magnetron sputtering apparatus described above, magnetron sputtering was performed, and changes in the number of particles (dust) were examined in the same manner as in Reference Example 1. As a result, it was confirmed that there was no suddenly generated particles compared to the case where no thermal spraying was performed on the target and the backing plate, the total number of particles was reduced by half, and particle generation could be effectively and stably prevented.

  DESCRIPTION OF SYMBOLS 1 ... Component for vacuum film-forming apparatus, 2 ... Component main body (base material), 3 ... Sprayed film, 11 ... Target, 12 ... Backing plate, 13 ... Target outer periphery presser, 14 ... Center cap, 15 ... Ground shield, 16, 20 ... deposition preventing plate, 17 ... deposition substrate, 18 ... platen ring, 19 ... substrate holder.

Claims (2)

On the surface of the component main body of the vacuum film forming apparatus, the difference in thermal expansion coefficient from the component main body is 10 × 10 ⁻⁶ / K or less, and the surface roughness is in the range of 5 to 50 μm in average roughness. A step of forming an Al sprayed film having a thickness in the range of 50 to 500 μm by an arc spraying method in the atmosphere;
Heating the Al sprayed film in a vacuum and degassing it,
The Al sprayed film after the degassing treatment was heated from room temperature to 773K in vacuum for 1 hour, and then held for 1 hour, and the total gas released was measured by a value measured from a decrease in the degree of vacuum after heating. A method for producing a vacuum film forming apparatus component, comprising obtaining an Al sprayed film having a residual gas amount of 5 Torr · cc / g or less. In the manufacturing method of the component for vacuum film-forming apparatuses of Claim 1,
Furthermore, before forming the said Al sprayed film, it comprises the process of blasting the said surface of the said component main body, The manufacturing method of the components for vacuum film-forming apparatuses characterized by the above-mentioned.

Images