CN109314138A - 场效应晶体管及其制造方法 - Google Patents
场效应晶体管及其制造方法 Download PDFInfo
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- CN109314138A CN109314138A CN201680086755.5A CN201680086755A CN109314138A CN 109314138 A CN109314138 A CN 109314138A CN 201680086755 A CN201680086755 A CN 201680086755A CN 109314138 A CN109314138 A CN 109314138A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910021389 graphene Inorganic materials 0.000 claims description 24
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 8
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- 238000010894 electron beam technology Methods 0.000 description 3
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
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- 239000010949 copper Substances 0.000 description 2
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- 238000005566 electron beam evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
提供了一种场效应晶体管及其制造方法，涉及电子技术领域。场效应晶体管包括衬底层(1)、沟道层(2)、源极(3)、漏极(4)、电介质层(5)和栅极(6)；沟道层(2)覆盖于衬底层(1)的上表面，沟道层(2)包括第一区域(21)和第二区域(22)，第一区域(21)和第二区域(22)中均包括至少一个过孔，各个过孔用于贯穿沟道层(2)以暴露出衬底层(1)，且各个过孔的形状为分形图形，分形图形基于指定图形确定得到，且分形图形与指定图形的周长之比大于分形图形与指定图形的面积之比；源极(3)位于沟道层(2)中第一区域(21)的上方，且源极(3)与衬底层(1)在第一区域(21)的至少一个过孔位置处直接相连；漏极(4)位于沟道层(2)中第二区域(22)的上方，且漏极(4)与衬底层(1)在第二区域(22)的至少一个过孔位置处直接相连。这种场效应晶体管有效减小源极、漏极与沟道层之间的接触电阻的同时，不会产生其它额外的过大电阻，从而可以保证场效应晶体管的场效应效果。
Description
PCT国内申请，说明书已公开。
Claims (6)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/103695 WO2018076261A1 (zh) | 2016-10-28 | 2016-10-28 | 场效应晶体管及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109314138A true CN109314138A (zh) | 2019-02-05 |
| CN109314138B CN109314138B (zh) | 2021-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680086755.5A Active CN109314138B (zh) | 2016-10-28 | 2016-10-28 | 场效应晶体管及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109314138B (zh) |
| WO (1) | WO2018076261A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109103264B (zh) * | 2018-08-21 | 2022-05-10 | 中国科学院微电子研究所 | 基于纳米带的晶体管及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1957474A (zh) * | 2004-01-23 | 2007-05-02 | 国际整流器公司 | Ⅲ－氮电流控制装置及其制造方法 |
| CN102479804A (zh) * | 2010-11-30 | 2012-05-30 | 三星电子株式会社 | 石墨烯电子器件 |
| CN105047562A (zh) * | 2015-06-26 | 2015-11-11 | 中国电子科技集团公司第十三研究所 | 半悬浮石墨烯场效晶体管制备方法 |
| US20160118491A1 (en) * | 2013-07-12 | 2016-04-28 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
| US20160240719A1 (en) * | 2015-02-13 | 2016-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof |
| CN106030819A (zh) * | 2014-03-20 | 2016-10-12 | 英特尔公司 | 具有选择性过孔接线柱的可缩放互连结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229163B1 (en) * | 1998-11-20 | 2001-05-08 | Fairchild Semiconductor Corp. | Very high aspect ratio semiconductor devices using fractal based topologies |
| CN102184858A (zh) * | 2011-04-07 | 2011-09-14 | 复旦大学 | 一种石墨烯场效应晶体管的制备方法 |
| CN102593159A (zh) * | 2012-03-20 | 2012-07-18 | 四川大学 | 一种增强型石墨烯场效应晶体管 |
| KR20150007546A (ko) * | 2013-07-11 | 2015-01-21 | 서울반도체 주식회사 | p형 갈륨나이트라이드 전류장벽층을 갖는 수직형 트랜지스터 및 그 제조방법 |
| CN105355702B (zh) * | 2015-11-17 | 2017-04-19 | 国家纳米科学中心 | 用于增强红外光谱探测的石墨烯等离激元器件及制备方法 |
-
2016
- 2016-10-28 CN CN201680086755.5A patent/CN109314138B/zh active Active
- 2016-10-28 WO PCT/CN2016/103695 patent/WO2018076261A1/zh active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1957474A (zh) * | 2004-01-23 | 2007-05-02 | 国际整流器公司 | Ⅲ－氮电流控制装置及其制造方法 |
| CN102479804A (zh) * | 2010-11-30 | 2012-05-30 | 三星电子株式会社 | 石墨烯电子器件 |
| US20160118491A1 (en) * | 2013-07-12 | 2016-04-28 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
| CN106030819A (zh) * | 2014-03-20 | 2016-10-12 | 英特尔公司 | 具有选择性过孔接线柱的可缩放互连结构 |
| US20160240719A1 (en) * | 2015-02-13 | 2016-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices Comprising 2D-Materials and Methods of Manufacture Thereof |
| CN105047562A (zh) * | 2015-06-26 | 2015-11-11 | 中国电子科技集团公司第十三研究所 | 半悬浮石墨烯场效晶体管制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109314138B (zh) | 2021-10-15 |
| WO2018076261A1 (zh) | 2018-05-03 |
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