CN109285806B - Method for manufacturing electrostatic chuck plate - Google Patents
Method for manufacturing electrostatic chuck plate Download PDFInfo
- Publication number
- CN109285806B CN109285806B CN201810714545.7A CN201810714545A CN109285806B CN 109285806 B CN109285806 B CN 109285806B CN 201810714545 A CN201810714545 A CN 201810714545A CN 109285806 B CN109285806 B CN 109285806B
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- conductor film
- electrostatic chuck
- base substrate
- chuck plate
- resin sheet
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000002679 ablation Methods 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 38
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 16
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- -1 Polyethylene Polymers 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a method for manufacturing an electrostatic chuck plate, which can form an electrode at lower cost than the prior art. The method for manufacturing an electrostatic chuck plate according to the present invention is a method for manufacturing an electrostatic chuck plate for adsorbing and holding a workpiece by electrostatic force, comprising the steps of: a conductor film forming step of providing a conductor film containing a metal oxide on an insulating surface side of the base substrate formed of an insulator; and an electrode forming step of, after the conductor film forming step, performing ablation processing on the conductor film by using a laser beam having a wavelength that is transparent to the base substrate, and forming positive and negative electrodes on the insulating surface side of the base substrate.
Description
Technical Field
The present invention relates to a method for manufacturing an electrostatic chuck plate used for holding a plate-shaped workpiece or the like.
Background
When processing semiconductor wafers, optical device wafers, package substrates, and the like by a cutting device, a grinding device, a laser processing device, and the like, a protective member such as an adhesive tape or a hard substrate is usually attached to these plate-shaped objects to be processed. This can protect the workpiece from impact applied during processing, transportation, and the like.
The protective member is usually attached to the workpiece with an adhesive having a certain degree of adhesive force. Therefore, for example, the protective member may not be easily peeled from the processed object. In addition, when a disposable adhesive tape or the like which cannot be used any more is used, the cost required for processing the workpiece is also liable to increase.
Accordingly, in recent years, an electrostatic chuck plate has been developed which adsorbs and holds a workpiece by static electricity (for example, see patent document 1). In this electrostatic chuck plate, for example, by forming the electrode for generating the electrostatic attraction force into a comb-tooth shape, the strong attraction force can be maintained even after the power supply to the electrode is stopped.
Prior art literature
Patent literature
Patent document 1: japanese patent laid-open publication 2016-51836
Disclosure of Invention
Problems to be solved by the invention
The electrodes of the electrostatic chuck plate typified by the above-described comb-tooth-shaped electrodes are often formed by wet etching. However, this wet etching requires a mask matching the pattern of the electrode, which is a problem in that it is easy to cost. Therefore, a method for manufacturing an electrostatic chuck plate capable of forming an electrode at a lower cost is demanded.
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for manufacturing an electrostatic chuck plate capable of forming an electrode at a lower cost than in the past.
Means for solving the problems
According to one aspect of the present invention, there is provided a method for manufacturing an electrostatic chuck plate for adsorbing and holding a workpiece by electrostatic force, the method comprising: a conductor film forming step of providing a conductor film containing a metal oxide on an insulating surface side of the base substrate formed of an insulator; and an electrode forming step of, after the conductor film forming step, performing ablation processing on the conductor film by using a laser beam having a wavelength that is transparent to the base substrate, and forming positive and negative electrodes on the insulating surface side of the base substrate.
In one embodiment of the present invention, the base substrate is preferably made of glass, and the wavelength of the laser beam is preferably 500nm or more.
According to another aspect of the present invention, there is provided a method for manufacturing an electrostatic chuck plate for adsorbing and holding a workpiece by electrostatic force, the method comprising: a resin sheet preparation step of preparing a resin sheet provided with a conductor film containing a metal oxide on the 1 st surface side; an electrode forming step of, after the resin sheet preparing step, performing ablation processing on the conductor film by using a laser beam having a wavelength that is transparent to the resin sheet, and forming positive and negative electrodes on the 1 st surface side of the resin sheet; and an electrode transfer step of adhering the electrode to an insulating surface side of a base substrate formed of an insulator after the electrode forming step, and peeling the resin sheet from the electrode to transfer the positive and negative electrodes to the insulating surface side of the base substrate.
In the above-described another aspect of the present invention, the resin sheet is preferably a resin sheet transparent in the visible light region, and the wavelength of the laser beam is preferably 1000nm or more.
Effects of the invention
In the method for manufacturing an electrostatic chuck plate according to one embodiment of the present invention and the method for manufacturing an electrostatic chuck plate according to another embodiment of the present invention, since the positive and negative electrodes are formed by ablation processing of the conductive film with a laser beam, the positive and negative electrodes can be formed at a lower cost than in the case of using a wet etching method or the like, which is easy to cost.
Drawings
Fig. 1 (a) is a sectional view schematically showing a state in which a conductive film is formed on a base substrate, fig. 1 (B) is a sectional view schematically showing a case in which an ablation process is performed on the conductive film, and fig. 1 (C) is a sectional view schematically showing a structure of a completed electrostatic chuck plate.
Fig. 2 is a top view schematically showing the structure of a completed electrostatic chuck plate.
Fig. 3 is a perspective view schematically showing the structure of a frame unit using an electrostatic chuck plate.
Fig. 4 is a sectional view schematically showing the structure of a frame unit using an electrostatic chuck plate.
Fig. 5 is a perspective view schematically showing a case where a workpiece is adsorbed to a frame unit.
Fig. 6 (a) is a cross-sectional view schematically showing a case where an electric conductor film is subjected to ablation processing by the method for manufacturing an electrostatic chuck plate according to a modification, fig. 6 (B) is a cross-sectional view schematically showing a case where a resin sheet is peeled off from an electrode that has been attached to a base substrate by the method for manufacturing an electrostatic chuck plate according to a modification, and fig. 6 (C) is a cross-sectional view schematically showing a structure of an electrostatic chuck plate manufactured by the method for manufacturing an electrostatic chuck plate according to a modification.
Detailed Description
An embodiment of the present invention will be described with reference to the accompanying drawings. The method for manufacturing an electrostatic chuck plate according to the present embodiment includes a conductive film forming step (see fig. 1 (a)) and an electrode forming step (see fig. 1 (B), fig. 1 (C), and fig. 2).
In the conductor film forming step, a conductor film containing a metal oxide is provided on the 1 st surface side of a base substrate having at least the 1 st surface formed of an insulator. In the electrode forming step, the conductive film is ablated by a laser beam having a wavelength that is transparent to the base substrate, and positive and negative electrodes are formed on the 1 st surface side of the base substrate. The method for manufacturing the electrostatic chuck plate according to the present embodiment will be described in detail below.
In the method for manufacturing an electrostatic chuck plate according to the present embodiment, a conductive film forming step is first performed, and a conductive film including a metal oxide is provided on a base substrate. Fig. 1 (a) is a cross-sectional view schematically showing a state in which the conductor film 3 is formed on the 1 st surface (insulating surface) 1a side of the base substrate 1.
As shown in fig. 1a, the base substrate 1 is formed in a disk shape using a glass material such as soda glass, borosilicate glass, or quartz glass transparent to light in the visible light range (wavelength: 360nm to 830 nm), and has a 1 st surface 1a and a 2 nd surface 1b which are substantially flat. That is, the 1 st surface 1a and the 2 nd surface 1b of the base substrate 1 are made of an insulator.
The diameter of the base substrate 1 is preferably equal to or greater than the diameter of the workpiece 11 (see fig. 5, etc.) to be adsorbed, for example. The thickness of the base substrate 1 is typically about 1mm to 30 mm. The material, shape, structure, size, thickness, and the like of the base substrate 1 are not limited.
For example, a base substrate 1 made of a material such as resin or ceramic may be used. At least the 1 st surface 1a of the base substrate 1 may be made of an insulator. Thus, for example, a substrate made of a semiconductor, a conductor, or the like may be coated with an insulator to be used as the base substrate 1.
In the conductor film forming step of the present embodiment, the conductor film 3 including the metal oxide is formed on the entire 1 st surface 1a side of the base substrate 1 by a method such as sputtering. As the metal Oxide, a material transparent to light in the visible light region, such as Indium Tin Oxide (ITO), is preferably used. Thus, the electric conductor film 3 is transparent in the visible light range, and thus, for example, the electrostatic chuck plate of the present embodiment can be used in laser processing using a laser beam in the visible light range. The thickness of the conductor film 3 is typically about 1 μm to 100 μm.
The material, shape, size, thickness, forming method, and the like of the conductor film 3 are not particularly limited, and the conductor film 3 may be formed by, for example, CVD, vacuum evaporation, coating, or the like. The conductor film 3 may be formed by adhering the conductor film provided on the resin sheet to the 1 st surface 1a side of the base substrate 1. In this case, for example, a transparent conductive film ELECRYSTA (registered trademark) manufactured by ridong electric company, or the like can be used.
After the conductor film forming step, an electrode forming step is performed, and the conductor film 3 provided on the 1 st surface 1a side of the base substrate 1 is subjected to ablation processing by a laser beam to form positive and negative electrodes. Fig. 1 (B) is a cross-sectional view schematically showing a case where the conductor film 3 is subjected to ablation processing. The electrode forming step is performed using, for example, a laser processing apparatus 2 shown in fig. 1 (B).
The laser processing apparatus 2 includes a chuck table 4 for sucking and holding the base substrate 1. The chuck table 4 is coupled to a rotation driving source (not shown) such as a motor, and rotates about a rotation axis substantially parallel to the vertical direction. A moving mechanism (not shown) is provided below the chuck table 4, and the chuck table 4 is moved in the machine feed direction (the 1 st horizontal direction) and the index feed direction (the 2 nd horizontal direction) by the moving mechanism.
A part of the upper surface of the chuck table 4 serves as a holding surface 4a for sucking and holding the base substrate 1. The holding surface 4a is connected to a suction source (not shown) via a suction path (not shown) or the like formed inside the chuck table 4. By applying negative pressure of the suction source to the holding surface 4a, the base substrate 1 is sucked and held by the chuck table 4.
A laser irradiation unit 6 is disposed above the chuck table 4. The laser irradiation unit 6 irradiates and condenses a laser beam 6a pulsed by a laser oscillator (not shown) at a predetermined position. The laser oscillator is configured to pulse a laser beam 6a having a wavelength that is transparent to the base substrate 1 and that can ablate the conductor film 3.
In the electrode forming step, first, a line (not shown) to be irradiated by the laser beam 6a is set on the conductor film 3. The irradiation line needs to be set in a shape to separate the conductor film 3 into 2 or more portions. The timing of setting the irradiation scheduled line may be arbitrary. The irradiation line may be set at least before the irradiation of the laser beam 6a to the conductor film 3.
Next, the 2 nd surface 1b side of the base substrate 1 is brought into contact with the holding surface 4a of the chuck table 4, and a negative pressure of the suction source is applied. Thus, the base substrate 1 is held on the chuck table 4 in a state where the conductor film 3 provided on the 1 st surface 1a side is exposed upward. Thereafter, the chuck table 4 is rotated and moved to adjust the positional relationship between the base substrate 1 and the laser irradiation unit 6.
Then, in order to irradiate the laser beam 6a along the irradiation line (not shown), the chuck table 4 is moved while irradiating the laser beam 6a from the laser irradiation unit 6 to the conductor film 3. Thus, a part of the conductor film 3 can be removed by ablation processing, and an insulating region 3a along the irradiation scheduled line is formed.
In the present embodiment, the conductive film 3 is irradiated with the laser beam 6a having a wavelength that is transparent to the base substrate 1. More specifically, it is preferable to set the laser beam 6a having a wavelength of 500nm or more to 0.44J/cm 2 The above conditions are irradiated to the conductor film 3. Thereby, the insulating region 3a can be formed by removing a part of the conductor film 3 while suppressing deterioration of the base substrate 1.
When the insulating region 3a is formed along all the irradiation scheduled lines, the conductor film 3 is separated into a positive electrode pattern (positive electrode) 3b (see fig. 1 (C) and the like) and a negative electrode pattern (negative electrode) 3C (see fig. 1 (C) and the like) by the insulating region 3a. That is, the positive electrode pattern 3b and the negative electrode pattern 3c are formed on the 1 st surface 1a side of the base substrate 1. Thus, the electrostatic chuck plate 5 having the positive electrode pattern 3b and the negative electrode pattern 3C on the 1 st surface 1a side of the base substrate 1 is completed (see fig. 1 (C) and the like).
As described above, in the present embodiment, the laser beam 6a is irradiated along the irradiation scheduled line of the conductor film 3, and therefore, the time required for processing is easily shortened as compared with a method such as wet etching that requires a mask. In addition, since the mask can be formed unlike wet etching or the like, the cost for forming the positive electrode pattern 3b and the negative electrode pattern 3c can be suppressed low.
Fig. 1 (C) is a sectional view schematically showing the structure of the electrostatic chuck plate 5, and fig. 2 is a plan view schematically showing the structure of the electrostatic chuck plate 5. As shown in fig. 1 (C) and 2, the positive electrode pattern 3b and the negative electrode pattern 3C may be formed, for example, in a pair of comb teeth in which positive electrodes and negative electrodes are alternately arranged.
In such a comb-shaped electrode, the positive electrode and the negative electrode are arranged at a high density, and thus, for example, electrostatic force called gradient force or the like acting between the electrode and the workpiece 11 is also enhanced. That is, the workpiece 11 can be adsorbed and held with a strong force. In addition, jiang Xifu force can be maintained even after the power supply to the positive and negative electrodes is stopped.
Among them, the shape, size, and the like of the positive electrode pattern 3b and the negative electrode pattern 3c are not particularly limited. For example, the positive electrode pattern 3b and the negative electrode pattern 3c may also be constituted by curves, circles, or the like. As shown in fig. 2, the irradiation line forming the insulating region 3a is formed in a shape that can be formed by one stroke, thereby further shortening the time required for processing.
In this way, in the method of manufacturing an electrostatic chuck plate of the present embodiment, the positive electrode pattern (positive electrode) 3b and the negative electrode pattern (negative electrode) 3c are formed by ablation processing of the conductor film 3 with the laser beam 6a, and therefore the positive electrode pattern 3b and the negative electrode pattern 3c can be formed at a lower cost than in the case of using a wet etching or the like method which is easy to cost.
The electrostatic chuck plate 5 thus manufactured is incorporated into various devices for sucking and holding the workpiece 11. Fig. 3 is a perspective view schematically showing the structure of the frame unit 12 using the electrostatic chuck plate 5, and fig. 4 is a sectional view schematically showing the structure of the frame unit 12 using the electrostatic chuck plate 5.
As shown in fig. 3 and 4, the frame unit 12 includes an annular frame 14 made of a material such as aluminum. An opening 14c penetrating the frame 14 from the 1 st surface 14a to the 2 nd surface 14b is formed in a central portion of the frame 14. The shape of the opening 14c is, for example, substantially circular when viewed from the 1 st surface 14a side (or the 2 nd surface 14b side). The material, shape, size, and the like of the frame 14 are not particularly limited.
A film-like base sheet 16 made of a material such as Polyethylene (PE) or polyethylene terephthalate (PET) is fixed to the 2 nd surface 14b of the frame 14 so as to cover the opening 14c. Specifically, the outer peripheral portion of the 1 st surface 16a side of the circular base sheet 16 is adhered to the 2 nd surface 14b of the frame 14.
The base sheet 16 has, for example, flexibility to protect the workpiece 11 and insulation to such an extent that electrostatic force to be described later is not blocked. The material, shape, thickness, size, etc. of the base sheet 16 are not particularly limited. The workpiece 11 is held by the 1 st surface 16a side of the base sheet 16. On the other hand, the electrostatic chuck plate 5 is provided at the center portion of the base sheet 16 on the 2 nd surface 16b side.
The electrostatic chuck plate 5 is fixed by, for example, a cover plate 18 having an adhesive force so as to closely adhere the side of the conductor film 3 (positive electrode pattern 3b and negative electrode pattern 3 c) to the side of the 2 nd surface 16b of the base sheet 16. In this case, the electric field generated by the conductor film 3 can be more effectively applied to the workpiece 11 on the 1 st surface 16a side than in the case where the 2 nd surface 1b side of the base substrate 1 is brought into close contact with the 2 nd surface 16b side of the base sheet 16.
The cover plate 18 includes, for example, a circular base sheet made of the same material as the base sheet 16, and an adhesive layer (paste layer) provided on one surface of the base sheet. Here, the diameter of the cover plate 18 (base material sheet) is larger than the diameter of the electrostatic chuck plate 5 (base substrate 1). The material, shape, thickness, size, structure, etc. of the cover plate 18 are not particularly limited.
A 1 st wiring 20a connected to the positive electrode pattern 3b and a 2 nd wiring 20b connected to the negative electrode pattern 3c are arranged on the 2 nd surface 16b side of the base sheet 16. As shown in fig. 3, the power supply unit 22 is provided on the 1 st surface 14a side of the frame 14, and the 1 st wiring 20a and the 2 nd wiring 20b are connected to the power supply unit 22 so as to surround the frame 4, for example.
The power supply unit 22 includes a battery holder 22a for accommodating a battery 24, and the battery 24 is used for supplying power to the positive electrode pattern 3b and the negative electrode pattern 3c. In addition, a switch 22b is provided at a position adjacent to the battery holder 22a, the switch 22b being for switching between power supply and non-power supply to the positive electrode pattern 3a and the negative electrode pattern 3 b.
For example, when the switch 22b is in an on state (open state), the electric power of the battery 24 housed in the battery holder 22a is supplied to the positive electrode pattern 3b and the negative electrode pattern 3c via the 1 st wiring 20a and the 2 nd wiring 20b. On the other hand, when the switch 22b is in the non-conductive state (off state), the power supply to the positive electrode pattern 3b and the negative electrode pattern 3c is stopped.
In fig. 3 and 4, the power supply unit 22 is disposed on the 1 st surface 14a side of the frame 14, but the disposition of the power supply unit 22 and the like are not particularly limited. At least the power supply unit 22 may be disposed at a position where it does not become an obstacle when the frame unit 12 is used (i.e., the workpiece 11 is sucked and held). For example, the power supply unit 22 may be disposed in the opening 14c of the frame 14. The battery 24 may be a primary battery such as a button-type battery (coin-type battery), or may be a secondary battery that can be repeatedly used by charging.
Fig. 5 is a perspective view schematically showing a state in which the workpiece 11 is adsorbed to the frame unit 12. The workpiece 11 is, for example, a disk-shaped wafer made of a material such as silicon (Si). The front surface 11a of the workpiece 11 is divided into a plurality of regions by dividing lines (streets) 13 set in a lattice pattern, and devices 15 such as ICs (integrated circuits, integrated Circuit) and MEMS (micro electro mechanical systems ) are formed in each region.
The material, shape, structure, size, and the like of the workpiece 11 are not limited. The work 11 made of other semiconductor, ceramic, resin, metal, or other material may be adsorbed and held by the frame unit 12. Likewise, the kind, number, shape, structure, size, configuration, and the like of the devices 15 are not limited.
When the workpiece 11 is to be adsorbed to the frame unit 12, the workpiece 11 is first placed on the base sheet 16 so that the rear surface 11b side of the workpiece 11 contacts the 1 st surface 16a side of the base sheet 16. More specifically, the workpiece 11 is placed on a region (central portion) of the base sheet 16 corresponding to the electrostatic chuck plate 5. Next, the switch 22b of the power supply unit 22 is turned on, and the electric power of the battery 24 is supplied to the positive electrode pattern 3b and the negative electrode pattern 3c.
Thereby, an electric field is generated around the positive electrode pattern 3b and the negative electrode pattern 3c, and as an effect thereof, electrostatic force acts between the workpiece 11 and the conductor film 3. Under the action of the electrostatic force, the workpiece 11 is attracted to and held by the frame unit 12. The electrostatic force acting between the workpiece 11 and the conductor film 3 includes coulomb force, johnsen-ravigneaux force, gradient force, and the like.
The present invention is not limited to the description of the above embodiments and the like, and may be variously modified and implemented. For example, in the above embodiment, the conductive film 3 including the metal oxide is provided on the base substrate 1, and then the conductive film 3 is subjected to ablation processing by the laser beam 6a, but the electrostatic chuck plate 5 may be manufactured by another process.
Fig. 6 (a) is a cross-sectional view schematically showing a case where the electric conductor film 3 is subjected to ablation processing by the method for manufacturing an electrostatic chuck plate according to the modification. In the method for manufacturing the electrostatic chuck plate according to the modification, first, a resin sheet preparation step is performed to prepare a resin sheet 7 provided with a conductive film 3 including a metal oxide.
The resin sheet 7 is made of a resin material such as polyethylene terephthalate (PET) transparent to light in the visible light range, and the conductive film 3 including a metal oxide is provided on the 1 st surface 7a side. As the resin sheet 7 with the conductor film 3, for example, a transparent conductive film ELECRYSTA (registered trademark) manufactured by riken corporation, or the like can be used.
After the resin sheet preparation step, an electrode forming step is performed, and the conductive film 3 provided on the 1 st surface 7a side of the resin sheet 7 is subjected to ablation processing by the laser beam 6a to form positive and negative electrodes. The electrode forming step is performed using, for example, the laser processing apparatus 2. The laser processing apparatus 2 used in this modification example is largely the same as the laser processing apparatus 2 used in the above embodiment, but the laser oscillator is configured to pulse a laser beam 6a having a wavelength that is transparent to the resin sheet 7 and that can ablate the conductor film 3.
In the electrode forming step of the modification example, first, a planned irradiation line (not shown) for irradiating the conductor film 3 with the laser beam 6a is set. The irradiation line needs to be set in a shape to separate the conductor film 3 into 2 or more portions. The timing of setting the irradiation scheduled line may be arbitrary. The irradiation line may be set at least before the irradiation of the laser beam 6a to the conductor film 3.
Next, the 2 nd surface 7b side of the resin sheet 7 is brought into contact with the holding surface 4a of the chuck table 4, and a negative pressure of the suction source is applied. Thus, the resin sheet 7 is held on the chuck table 4 in a state where the conductor film 3 provided on the 1 st surface 7a side is exposed upward. Subsequently, the chuck table 4 is rotated and moved to adjust the positional relationship between the resin sheet 7 and the laser irradiation unit 6.
Then, in order to irradiate the laser beam 6a along a line (not shown) set in the conductor film 3 to be irradiated, the chuck table 4 is moved while irradiating the laser beam 6a from the laser irradiation unit 6 to the conductor film 3. Thereby, a part of the conductor film 3 can be removed by ablation processing, and an insulating region 3a along the irradiation scheduled line is formed.
In this modification, the conductive film 3 is irradiated with a laser beam 6a having a wavelength that is transparent to the resin sheet 7. More specifically, it is preferable to set, for example, a wavelength of 1A laser beam 6a of over 000nm at 0.44J/cm 2 Above and below 8.84J/cm 2 Is irradiated to the conductor film 3. Thus, the insulating region 3a can be formed by removing a part of the conductor film 3, without causing deterioration or damage to the resin sheet 7 as in the case of using a laser beam in the ultraviolet range (wavelength: less than 360 nm).
When the insulating region 3a is formed along all the irradiation scheduled lines, the conductor film 3 is separated into a positive electrode pattern (positive electrode) 3b and a negative electrode pattern (negative electrode) 3c by the insulating region 3a. That is, the positive electrode pattern 3b and the negative electrode pattern 3c are formed on the 1 st surface 7a side of the resin sheet 7.
After the electrode forming step, an electrode transferring step is performed to transfer the positive electrode pattern 3b and the negative electrode pattern 3c to the 1 st surface (insulating surface) 1a side of the base substrate 1. In this electrode transfer step, for example, the positive electrode pattern 3b and the negative electrode pattern 3c on the resin sheet 7 are stuck on the 1 st surface 1a side of the base substrate 1, and then the resin sheet 7 is peeled off.
Fig. 6 (B) is a sectional view schematically showing a case where the resin sheet 7 is peeled from the positive electrode pattern 3B and the negative electrode pattern 3c that have been attached to the base substrate 1 by the manufacturing method of the electrostatic chuck plate of the modification. As shown in fig. 6 (B), the positive electrode pattern 3B and the negative electrode pattern 3c are attached to the 1 st surface 1a side of the base substrate 1 using an adhesive 9. The base substrate 1 may be the same as the base substrate 1 used in the above embodiment.
After the positive electrode pattern 3b and the negative electrode pattern 3c are adhered to the 1 st surface 1a side of the base substrate 1 using the adhesive 9, the resin sheet 7 is peeled from the positive electrode pattern 3b and the negative electrode pattern 3c. Thereby, the positive electrode pattern 3b and the negative electrode pattern 3c are shifted to the 1 st surface 1a side of the base substrate 1, completing the electrostatic chuck plate 5a. Fig. 6 (C) is a cross-sectional view schematically showing the structure of an electrostatic chuck plate manufactured by the method for manufacturing an electrostatic chuck plate according to the modification.
In this way, in the method of manufacturing the electrostatic chuck plate of the modification, the positive electrode pattern (positive electrode) 3b and the negative electrode pattern (negative electrode) 3c are formed by performing ablation processing on the conductor film 3 by the laser beam 6a, and therefore the positive electrode pattern 3b and the negative electrode pattern 3c can be formed at a lower cost than in the case of using a wet etching method or the like which is easy to cost.
The structures, methods, and the like of the above-described embodiments, modifications, and the like can be appropriately modified and implemented within a range not departing from the object of the present invention.
Symbol description
1. Base substrate
1a 1 st side (insulating side)
1b 2 nd side
3. Conductor film
3a insulating region
3b Positive electrode pattern (positive electrode)
3c negative electrode pattern (negative electrode)
5. 5a electrostatic chuck plate
7. Resin sheet
7a 1 st side
7b 2 nd side
9. Adhesive agent
2. Laser processing device
4. Chuck workbench
4a holding surface
6. Laser irradiation unit
6a laser beam
12. Frame unit
14. Frame
14a 1 st side
14b 2 nd side
14c opening
16. Foundation tablet
16a 1 st face
16b 2 nd side
18. Cover plate
20a 1 st wiring
20b 2 nd wiring
22. Power supply unit
22a battery holder
22b switch
24. Battery cell
Claims (2)
1. A method for manufacturing an electrostatic chuck plate for adsorbing and holding a workpiece by electrostatic force, comprising the steps of:
a resin sheet preparation step of preparing a resin sheet provided with a conductor film containing a metal oxide on the 1 st surface side;
an electrode forming step of, after the resin sheet preparing step, performing ablation processing on the conductor film by using a laser beam having a wavelength that is transparent to the resin sheet, and forming positive and negative electrodes on the 1 st surface side of the resin sheet; and
and an electrode transfer step of adhering the electrode to an insulating surface side of a base substrate formed of an insulator after the electrode forming step, and peeling the resin sheet from the electrode to transfer the positive and negative electrodes to the insulating surface side of the base substrate.
2. The method of manufacturing an electrostatic chuck plate according to claim 1,
the resin sheet is transparent in the visible light region,
the wavelength of the laser beam is more than 1000 nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017141864A JP6935132B2 (en) | 2017-07-21 | 2017-07-21 | Manufacturing method of electrostatic chuck plate |
| JP2017-141864 | 2017-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109285806A CN109285806A (en) | 2019-01-29 |
| CN109285806B true CN109285806B (en) | 2023-12-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810714545.7A Active CN109285806B (en) | 2017-07-21 | 2018-07-03 | Method for manufacturing electrostatic chuck plate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6935132B2 (en) |
| KR (1) | KR102533799B1 (en) |
| CN (1) | CN109285806B (en) |
| TW (1) | TWI766037B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7159942B2 (en) * | 2019-03-28 | 2022-10-25 | 株式会社村田製作所 | Appearance inspection device |
| JP7426833B2 (en) | 2020-01-15 | 2024-02-02 | 日本特殊陶業株式会社 | Manufacturing method of sheet body |
| JP2021111744A (en) * | 2020-01-15 | 2021-08-02 | 日本特殊陶業株式会社 | Manufacturing method for conductive layer, manufacturing method for wiring board and manufacturing method for heater device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11297805A (en) * | 1998-04-13 | 1999-10-29 | Tomoegawa Paper Co Ltd | Electrostatic chucking device, laminated sheet and bonding agent therefor |
| JP2004153171A (en) * | 2002-10-31 | 2004-05-27 | Sony Corp | Method for patterning transparent conductive film |
| WO2008108146A1 (en) * | 2007-03-01 | 2008-09-12 | Creative Technology Corporation | Electrostatic chuck |
| WO2016157930A1 (en) * | 2015-03-31 | 2016-10-06 | 日本電気硝子株式会社 | Substrate provided with transparent conductive film |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004235563A (en) * | 2003-01-31 | 2004-08-19 | Tomoegawa Paper Co Ltd | Electrode sheet for electrostatic chuck device and electrostatic chuck device using it |
| US7929269B2 (en) * | 2008-09-04 | 2011-04-19 | Momentive Performance Materials Inc. | Wafer processing apparatus having a tunable electrical resistivity |
| DE102011014162B4 (en) * | 2011-03-16 | 2019-12-05 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co | Method for producing a carrier of an electrostatic clamp |
| JP2013152514A (en) * | 2012-01-24 | 2013-08-08 | Toppan Printing Co Ltd | Method of manufacturing touch panel sensor device, and touch panel sensor device |
| GB2509985A (en) * | 2013-01-22 | 2014-07-23 | M Solv Ltd | Method of forming patterns on coatings on opposite sides of a transparent substrate |
| JP6576019B2 (en) * | 2014-02-14 | 2019-09-18 | Ｎｉｓｓｈａ株式会社 | Transparent electrode film manufacturing method and laser processing machine |
| JP6433204B2 (en) | 2014-09-01 | 2018-12-05 | 株式会社ディスコ | Electrostatic support plate and method for manufacturing electrostatic support plate |
| JP6463936B2 (en) * | 2014-10-01 | 2019-02-06 | 日本特殊陶業株式会社 | Manufacturing method of parts for semiconductor manufacturing equipment |
| JP2018518055A (en) * | 2015-06-04 | 2018-07-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Transparent electrostatic carrier |
-
2017
- 2017-07-21 JP JP2017141864A patent/JP6935132B2/en active Active
-
2018
- 2018-06-11 TW TW107119942A patent/TWI766037B/en active
- 2018-07-03 CN CN201810714545.7A patent/CN109285806B/en active Active
- 2018-07-13 KR KR1020180081785A patent/KR102533799B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11297805A (en) * | 1998-04-13 | 1999-10-29 | Tomoegawa Paper Co Ltd | Electrostatic chucking device, laminated sheet and bonding agent therefor |
| JP2004153171A (en) * | 2002-10-31 | 2004-05-27 | Sony Corp | Method for patterning transparent conductive film |
| WO2008108146A1 (en) * | 2007-03-01 | 2008-09-12 | Creative Technology Corporation | Electrostatic chuck |
| WO2016157930A1 (en) * | 2015-03-31 | 2016-10-06 | 日本電気硝子株式会社 | Substrate provided with transparent conductive film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6935132B2 (en) | 2021-09-15 |
| TW201917815A (en) | 2019-05-01 |
| TWI766037B (en) | 2022-06-01 |
| CN109285806A (en) | 2019-01-29 |
| JP2019021867A (en) | 2019-02-07 |
| KR102533799B1 (en) | 2023-05-17 |
| KR20190010445A (en) | 2019-01-30 |
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