CN109192827A - A kind of gallium nitride based LED epitaxial slice and its growing method - Google Patents
A kind of gallium nitride based LED epitaxial slice and its growing method Download PDFInfo
- Publication number
- CN109192827A CN109192827A CN201810847761.9A CN201810847761A CN109192827A CN 109192827 A CN109192827 A CN 109192827A CN 201810847761 A CN201810847761 A CN 201810847761A CN 109192827 A CN109192827 A CN 109192827A
- Authority
- CN
- China
- Prior art keywords
- buffer layer
- layer
- oxygen
- substrate
- gallium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 89
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 138
- 239000001301 oxygen Substances 0.000 claims abstract description 138
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 138
- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000000463 material Substances 0.000 claims abstract description 50
- 229910017083 AlN Inorganic materials 0.000 claims abstract description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 370
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 66
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 238000010276 construction Methods 0.000 claims description 21
- 239000002356 single layer Substances 0.000 claims description 17
- 230000003139 buffering effect Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 abstract description 22
- 239000010980 sapphire Substances 0.000 abstract description 22
- 230000007704 transition Effects 0.000 abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its growing methods, belong to technical field of semiconductors.The gallium nitride based LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the material of the buffer layer uses the aluminium nitride mixed with oxygen, and the buffer layer is greater than the doping concentration of buffer layer oxygen in the part of the n type semiconductor layer close to the doping concentration of oxygen in the part of the substrate.Oxygen is mixed in the material aluminium nitride that the present invention passes through buffer layer, and buffer layer is greater than the doping concentration of the oxygen in the part of n type semiconductor layer in buffer layer close to the doping concentration of oxygen in the part of substrate, the gradually transition that two kinds of different crystalline lattices from sapphire to gallium nitride-based material may be implemented, is effectively relieved the lattice mismatch between sapphire and gallium nitride-based material.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its growth
Method.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) it is a kind of semi-conductor electricity that can be luminous
Subcomponent.Gallium nitride (GaN) sill as a kind of important third generation semiconductor material, semiconductor lighting, power electronics,
The fields such as high-frequency communication are with a wide range of applications.Since nineteen nineties, gallium nitride based light emitting diode is gradually
Commercialization, has filled up conventional light emitting diodes in the blank of blue wave band.
Epitaxial wafer is the primary finished product in light emitting diode manufacturing process.Existing GaN-based LED epitaxial wafer includes lining
Bottom, n type semiconductor layer, active layer and p type semiconductor layer, n type semiconductor layer, active layer and p type semiconductor layer are sequentially laminated on
On substrate.P type semiconductor layer is used to provide the hole for carrying out recombination luminescence, and n type semiconductor layer carries out recombination luminescence for providing
Electronics, the radiation recombination that active layer is used to carry out electrons and holes shines, and substrate is used to for epitaxial material provide growing surface.
The material of substrate generally selects sapphire, and n type semiconductor layer, active layer and p type semiconductor layer use gallium nitride base
Material, the crystal lattice difference between sapphire and gallium nitride-based material are larger.In order to obtain relatively good quality of materials and relatively high
Production efficiency, in the manufacturing process of the gallium nitride based LED epitaxial slice of current mainstream, it usually needs in sapphire
Substrate (main component Al2O3) on growing aluminum nitride buffer layer in advance, introducing aluminum nitride buffer layer can be gallium nitride-based material
It brings stress release, the effects of nuclearing centre is provided, realize the transition of lattice structure.But nitrogen used by current mainstream technology
Change aluminium buffer layer is the equally distributed single layer structure of each component, fails to play aluminum nitride buffer layer completely to gallium nitride base light emitting two
The potentiality of pole pipe bring performance boost.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its growing method, it is able to solve existing
There is technology to fail the problem of playing potentiality of the aluminum nitride buffer layer to gallium nitride based light emitting diode bring performance boost completely.
The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, the gallium nitride base hairs
Optical diode epitaxial wafer includes substrate, buffer layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, described
N type semiconductor layer, the active layer and the p type semiconductor layer stack gradually over the substrate, the material of the buffer layer
Using the aluminium nitride mixed with oxygen, the doping concentration of buffer layer oxygen in the part of the substrate is greater than the buffer layer and leans on
The doping concentration of oxygen in the part of the nearly n type semiconductor layer.
Optionally, the buffer layer is single layer structure, and the doping concentration of oxygen is along the gallium nitride base in the single layer structure
The stacking direction of LED epitaxial slice is gradually reduced.
Optionally, the buffer layer is laminated construction, and the doping concentration of oxygen is along the gallium nitride base in the laminated construction
The stacking direction of LED epitaxial slice successively reduces.
Preferably, the maximum value of the molar concentration of oxygen is 3%~20% in the buffer layer, and oxygen rubs in the buffer layer
The minimum value of your concentration is 0%~8%.
Optionally, the buffer layer with a thickness of 5nm~100nm.
On the other hand, the embodiment of the invention provides a kind of growing method of gallium nitride based LED epitaxial slice, institutes
Stating growing method includes:
One substrate is provided；
Grown buffer layer over the substrate；
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on the buffer layer；
Wherein, the material of the buffer layer uses the aluminium nitride mixed with oxygen, and the buffer layer is close to the part of the substrate
The doping concentration of middle oxygen is greater than the doping concentration of buffer layer oxygen in the part of the n type semiconductor layer.
Optionally, the grown buffer layer over the substrate, comprising:
The substrate is put into the reaction chamber of growth apparatus；
Nitrogen and oxygen are passed through into the reaction chamber, over the substrate grown buffer layer, the buffer layer is single layer
Structure, the constancy of volume for the nitrogen being passed through when growing the single layer structure, and the volume for the oxygen being passed through is gradually reduced.
Optionally, the grown buffer layer over the substrate, comprising:
The substrate is put into the reaction chamber of growth apparatus；
Nitrogen and oxygen are passed through into the reaction chamber, over the substrate grown buffer layer, the buffer layer is lamination
Structure, the constancy of volume for the nitrogen being passed through when growing the laminated construction, and the volume for the oxygen being passed through successively reduces.
Preferably, the maximum value of the flow of oxygen is the flow of nitrogen when growing the buffer layer when growing the buffer layer
2.5%~10%, when growing the buffer layer minimum value of the flow of oxygen be grow the buffer layer when nitrogen flow
0%~5%.
Preferably, the power of growth apparatus, which is less than, when growing part of the buffer layer close to the substrate grows described delay
The power of growth apparatus when rushing part of the layer close to the n type semiconductor layer.
Technical solution provided in an embodiment of the present invention has the benefit that
By mixing oxygen, and the doping concentration of buffer layer oxygen in the part of substrate in the material aluminium nitride of buffer layer
Greater than the doping concentration of oxygen in the part of n type semiconductor layer close in buffer layer；Buffer layer oxygen in the part of substrate is mixed
Miscellaneous concentration is higher, is Al with main component2O3Sapphire between lattice comparison match；Close to N-type semiconductor in simultaneous buffering layer
The doping concentration of oxygen is smaller in the part of layer, the lattice comparison match between gallium nitride-based material.Buffer layer setting is using blue
Between the substrate of jewel and the n type semiconductor layer for using gallium nitride-based material, it may be implemented from sapphire to gallium nitride-based material
The gradually transition of two kinds of different crystalline lattices, is effectively relieved the lattice mismatch between sapphire and gallium nitride-based material, and sufficiently release is blue
The stress that lattice mismatch generates between jewel and gallium nitride-based material improves lattice mismatch between sapphire and gallium nitride-based material
The defect of generation gradually reduces dislocation density, and crystallinity improves, and the crystal quality of epitaxial wafer is substantially improved, reduces active layer
Polarization, promotes internal quantum efficiency, brightness and the light efficiency of LED, while reducing the reverse leakage of LED, enhances the antistatic energy of LED
Power.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of buffer layer provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of another buffer layer provided in an embodiment of the present invention；
Fig. 4 is a kind of process of the growing method of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention
Figure；
A kind of signal of the variation pattern for the oxygen volume being passed through when Fig. 5 is grown buffer layer provided in an embodiment of the present invention
Figure；
Another variation pattern for the oxygen volume being passed through when Fig. 6 is grown buffer layer provided in an embodiment of the present invention shows
It is intended to.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice, Fig. 1 provides for the embodiment of the present invention
A kind of gallium nitride based LED epitaxial slice structural schematic diagram, referring to Fig. 1, the gallium nitride based LED epitaxial slice
Including substrate 10, buffer layer 20, n type semiconductor layer 30, active layer 40 and p type semiconductor layer 50, buffer layer 20, N-type semiconductor
Layer 30, active layer 40 and p type semiconductor layer 50 are sequentially laminated on substrate 10.
In the present embodiment, the material of buffer layer 20 uses the aluminium nitride mixed with oxygen, and buffer layer 20 is close to the portion of substrate 10
The doping concentration of oxygen is greater than the doping concentration of the oxygen in the part of n type semiconductor layer 30 of buffer layer 20 in point.
Since the doping concentration of the oxygen in the part of substrate 10 of buffer layer 20 is greater than buffer layer 20 close to n type semiconductor layer
The doping concentration of oxygen in 30 part, therefore lattice constant of the buffer layer 20 close to the part of substrate 10 is close less than buffer layer 20
The lattice constant of the part of n type semiconductor layer 30, dislocation density of the simultaneous buffering layer 20 close to the part of substrate 10 are higher than buffering
Dislocation density of the layer 20 close to the part of n type semiconductor layer 30.
Oxygen is mixed in the material aluminium nitride that the embodiment of the present invention passes through buffer layer, and buffer layer is in the part of substrate
The doping concentration of oxygen is greater than the doping concentration of the oxygen in the part of n type semiconductor layer in buffer layer；Buffer layer is close to substrate
The doping concentration of oxygen is higher in part, is Al with main component2O3Sapphire between lattice comparison match；In simultaneous buffering layer
The doping concentration of oxygen is smaller in the part of n type semiconductor layer, the lattice comparison match between gallium nitride-based material.Buffer layer
Be arranged in using sapphire substrate and using gallium nitride-based material n type semiconductor layer between, may be implemented from sapphire to
The gradually transition of two kinds of different crystalline lattices of gallium nitride-based material, the lattice being effectively relieved between sapphire and gallium nitride-based material lose
Match, sufficiently discharge the stress that lattice mismatch generates between sapphire and gallium nitride-based material, improves sapphire and gallium nitride substrate
The defect that lattice mismatch generates between material, gradually reduces dislocation density, crystallinity improves, and the crystal matter of epitaxial wafer is substantially improved
Amount, reduces the polarization of active layer, promotes internal quantum efficiency, brightness and the light efficiency of LED, while reducing the reverse leakage of LED, increases
The antistatic effect of strong LED.
In specific implementation, the doping concentration of the oxygen in the part of substrate 10 of buffer layer 20 is greater than 0, and buffer layer 20 is close
The doping concentration of oxygen can be greater than 0 in the part of n type semiconductor layer 30, can also be equal to 0.
Optionally, the thickness of buffer layer 20 can be 5nm~100nm, preferably 50nm.
If the thickness of buffer layer is less than 5nm, blue treasured may can not be effectively relieved since the thickness of buffer layer is too small
Lattice mismatch between stone and gallium nitride-based material；If the thickness of buffer layer is greater than 100nm, may be due to the thickness of buffer layer
Degree is too big and causes to waste, and increases production cost.
Optionally, the molar concentration of oxygen can be 0%~25% in 20 various pieces of buffer layer.
If the molar concentration of oxygen is greater than 25% in buffer layer various pieces, may due in buffer layer oxygen it is mole dense
It spends high and causes the lattice between buffer layer and gallium nitride-based material poor, influence the crystal quality of epitaxial wafer, lead
Cause can not effectively promote internal quantum efficiency, brightness and the light efficiency of LED.
Fig. 2 is a kind of structural schematic diagram of buffer layer provided in an embodiment of the present invention, is schematically shown in Fig. 2 with circle slow
The oxygen adulterated in layer is rushed, the circle quantity more multilist in some region shows that the doping concentration of this region oxygen is higher.Referring to fig. 2, exist
In a kind of implementation of the present embodiment, buffer layer 20 can be single layer structure, and the doping concentration of oxygen is along the nitrogen in single layer structure
The stacking direction for changing gallium based LED epitaxial slice is gradually reduced.
In above-mentioned implementation, the boundary of sublayer is not present in buffer layer 20, sublayer can not be divided；Oxygen in total
Doping concentration constantly change, the stacking direction along the gallium nitride based LED epitaxial slice is gradually reduced.
Using above-mentioned implementation, the doping concentration of oxygen is gradually changed, and the lattice constant of buffer layer accordingly also gradually changes,
Transitions smooth can utmostly improve the crystal quality of epitaxial wafer, promote internal quantum efficiency, brightness and the light efficiency of LED.
Preferably, the doping concentration of oxygen can be along the stacking side of the gallium nitride based LED epitaxial slice in single layer structure
Reduce to linear.In practical applications, the doping concentration of oxygen can also be outside the gallium nitride based light emitting diode in single layer structure
Prolong the non-linear reduction of stacking direction of piece.
Optionally, the maximum value of the molar concentration of oxygen can be 3%~20%, preferably 12% in buffer layer 20.
If the maximum value of the molar concentration of oxygen is less than 3% in buffer layer, may due in buffer layer oxygen it is mole dense
The maximum value of degree is too small and causes the molar concentration of oxygen in buffer layer too low, and sapphire and gallium nitride-based material can not be effectively relieved
Between lattice mismatch；If the maximum value of the molar concentration of oxygen is greater than 20% in buffer layer, may be due to oxygen in buffer layer
Molar concentration maximum value it is too big and cause the molar concentration of oxygen in buffer layer too high, between buffer layer and gallium nitride-based material
Lattice it is poor, influence the crystal quality of epitaxial wafer, lead to not effectively to be promoted the internal quantum efficiency of LED, brightness with
And light efficiency.
Optionally, the minimum value of the molar concentration of oxygen can be 0%~8%, preferably 4% in buffer layer 20.
If the minimum value of the molar concentration of oxygen is greater than 8% in buffer layer, may due in buffer layer oxygen it is mole dense
The minimum value of degree is too big and causes the molar concentration of oxygen in buffer layer too high, the lattice between buffer layer and gallium nitride-based material
It is poor with property, the crystal quality of epitaxial wafer is influenced, the internal quantum efficiency, brightness and the light efficiency that effectively promote LED are led to not.
For example, the molar concentration of oxygen is gradually decrease to 0% from 20% in buffer layer 20.
Fig. 3 is the structural schematic diagram of another buffer layer provided in an embodiment of the present invention, also with the schematic table of circle in Fig. 3
Show that the oxygen adulterated in buffer layer, the circle quantity more multilist in some region show that the doping concentration of this region oxygen is higher.Referring to figure
3, in another implementation of the present embodiment, buffer layer 20 can be laminated construction, the doping concentration of oxygen in laminated construction
Stacking direction along the gallium nitride based LED epitaxial slice successively reduces.
In above-mentioned implementation, buffer layer 20 includes that can be divided into the multiple sublayers stacked gradually；In single sublayer
The doping concentration of oxygen remains unchanged, stacking of the doping concentration of oxygen along the gallium nitride based LED epitaxial slice in all sublayers
Direction successively reduces.
Using above-mentioned implementation, realize that technique is relatively simple, the stability of product is preferable.
Optionally, the doping concentration of oxygen can be in arithmetic progression in each sublayer in laminated construction.In practical applications, it folds
The doping concentration of oxygen non-homogeneous can also reduce in each sublayer in layer structure.
Specifically, the tolerance of arithmetic progression can be 1%~5%, such as 3%.
Optionally, the maximum value of the molar concentration of oxygen can be 3%~20% in buffer layer 20.
If the maximum value of the molar concentration of oxygen is less than 3% in buffer layer, may due in buffer layer oxygen it is mole dense
The maximum value of degree is too small and causes the molar concentration of oxygen in buffer layer too low, and sapphire and gallium nitride-based material can not be effectively relieved
Between lattice mismatch；If the maximum value of the molar concentration of oxygen is greater than 20% in buffer layer, may be due to oxygen in buffer layer
Molar concentration maximum value it is too big and cause the molar concentration of oxygen in buffer layer too high, between buffer layer and gallium nitride-based material
Lattice it is poor, influence the crystal quality of epitaxial wafer, lead to not effectively to be promoted the internal quantum efficiency of LED, brightness with
And light efficiency.
Optionally, the minimum value of the molar concentration of oxygen can be 0%~8% in buffer layer 20.
If the minimum value of the molar concentration of oxygen is greater than 8% in buffer layer, may due in buffer layer oxygen it is mole dense
The minimum value of degree is too big and causes the molar concentration of oxygen in buffer layer too high, the lattice between buffer layer and gallium nitride-based material
It is poor with property, the crystal quality of epitaxial wafer is influenced, the internal quantum efficiency, brightness and the light efficiency that effectively promote LED are led to not.
Optionally, the quantity of sublayer can be 2~10, such as 6 in laminated construction.
If laminated construction neutron layer number is greater than 10, may make since the quantity of sublayer in laminated construction is too many
It must be difficult to control accurately the growth result at each sublayer and its interface, and also will increase production cost.
Optionally, the thickness of each sublayer can be 3nm~10nm, such as 6nm in laminated construction.
If the thickness of each sublayer is less than 3nm in laminated construction, may be due to the thickness of sublayer each in laminated construction
It spends too small and the lattice mismatch between sapphire and gallium nitride-based material can not be effectively relieved；If each sublayer in laminated construction
Thickness be greater than 10nm, then may cause waste of material since the thickness of sublayer each in laminated construction is too big, increase production
Cost.
For example, buffer layer 20 includes sublayer 21, sublayer 22 and the sublayer 23 stacked gradually, the molar concentration of oxygen in sublayer 21
It is 20%, the molar concentration of oxygen is 10% in sublayer 22, and the molar concentration of oxygen is 0% in sublayer 23.
Specifically, the material of substrate 10 can use sapphire.In practical applications, the material of substrate 10 can also use
Any one of silicon carbide, silicon, gallium nitride, zinc oxide, GaAs, gallium phosphide, magnesia and copper.The surface of substrate 10 can be
Plane, or the curved surface with certain pattern to be formed is made by technique, as graphical sapphire substrate (English:
Patterned Sapphire Substrate, referred to as: PSS).For example, substrate 10 uses PSS, the pattern on PSS, which is several, is in
The circular cone of array arrangement, the diameter of circular cone are 2.8 μm, and the height of circular cone is 1.8 μm, and the spacing between circular cone is 3 μm.
The material of n type semiconductor layer 30 can use the gallium nitride of n-type doping.Active layer 40 may include multiple Quantum Well
It is built with multiple quantum, multiple Quantum Well and multiple quantum build alternately laminated setting；The material of Quantum Well can use InGaN
(InGaN), the material that quantum is built can use gallium nitride.The material of p type semiconductor layer 50 can be using the nitridation of p-type doping
Gallium.
Further, the thickness of n type semiconductor layer 30 can be 1 μm~3 μm, preferably 1.5 μm；N type semiconductor layer 30
The doping concentration of middle N type dopant can be 1018cm-3~3*1019cm-3, preferably 6*1018cm-3.The thickness of Quantum Well can be with
For 3nm~4nm, preferably 3.5nm；The thickness that quantum is built can be 9nm~15nm, preferably 12nm；The quantity of Quantum Well with
The quantity that quantum is built is identical, and the quantity that quantum is built can be 5~11, preferably 8.The thickness of p type semiconductor layer 50 can
Think 100nm~300nm, preferably 200nm；The doping concentration of P-type dopant can be 10 in p type semiconductor layer 5018/cm3
~1020/cm3, preferably 1019/cm3。
Optionally, high as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include high temperature buffer layer 71
Warm buffer layer 71 is arranged between buffer layer 20 and n type semiconductor layer 30, to alleviate the lattice between substrate and n type semiconductor layer
Mismatch.
In specific implementation, buffer layer is the gallium nitride of the layer of low-temperature epitaxy on substrate first, therefore also referred to as
For low temperature buffer layer.The longitudinal growth for carrying out gallium nitride in low temperature buffer layer again will form multiple mutually independent three-dimensional islands
Structure, referred to as three-dimensional nucleating layer；Then gallium nitride is carried out between each three-dimensional island structure on all three-dimensional island structures
Cross growth, form two-dimension plane structure, referred to as two-dimentional retrieving layer；It is finally one layer of high growth temperature thicker on two-dimensional growth layer
Gallium nitride, referred to as intrinsic gallium nitride layer.Three-dimensional nucleating layer, two-dimentional retrieving layer and intrinsic gallium nitride layer are referred to as in the present embodiment
For high temperature buffer layer.
Further, the thickness of three-dimensional nucleating layer can be 400nm~600nm, preferably 500nm.Two-dimentional retrieving layer
Thickness can be 500nm~800nm, preferably 650nm.The thickness of intrinsic gallium nitride layer can be 1 μm~2 μm, such as 1.5 μm.
Optionally, it as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include stress release layer 72, answers
Power releasing layer 72 is arranged between n type semiconductor layer 30 and active layer 40, to produce to lattice mismatch between sapphire and gallium nitride
Raw stress is discharged, and the crystal quality of active layer is improved, and is conducive to electrons and holes in active layer and is carried out radiation recombination hair
Light improves the internal quantum efficiency of LED, and then improves the luminous efficiency of LED.
Specifically, stress release layer 72 may include multiple gallium indium nitride layers and multiple gallium nitride layers, multiple InGaNs
Layer and the alternately laminated setting of multiple gallium nitride layers.
Further, the thickness of gallium indium nitride layer can be 1nm~3nm, preferably 2nm in stress release layer 72；Nitridation
The thickness of gallium layer can be 20nm~40nm, preferably 30nm；The quantity of gallium indium nitride layer and the quantity of gallium nitride layer are identical, nitrogen
The quantity for changing gallium layer can be 3~9, preferably 6.
Optionally, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include electronic barrier layer 73, electricity
Sub- barrier layer 73 is arranged between active layer 40 and p type semiconductor layer 50, to avoid electron transition into p type semiconductor layer with sky
Cave carries out non-radiative recombination, reduces the luminous efficiency of LED.
Specifically, the material of electronic barrier layer 73 can be using the aluminium gallium nitride alloy (AlGaN) of p-type doping, such as AlyGa1-yN,
0.1 < y < 0.5.
Further, the thickness of electronic barrier layer 73 can be 50nm~100nm, preferably 75nm.
Preferably, as shown in Figure 1, the gallium nitride based LED epitaxial slice can also include low temperature P-type layer 74, low temperature
P-type layer 74 is arranged between active layer 40 and electronic barrier layer 73, has caused to avoid the higher growth temperature of electronic barrier layer
Phosphide atom in active layer is precipitated, and influences the luminous efficiency of light emitting diode.
In a kind of implementation of the present embodiment, low temperature P-type layer 74 can be essentially identical with p type semiconductor layer 50, no
It is only that with place, the growth temperature of low temperature P-type layer 74 is lower than the growth temperature of p type semiconductor layer 50.
In another implementation of the present embodiment, the material of low temperature P-type layer 74 can be the gallium nitride of p-type doping.
Further, the thickness of low temperature P-type layer 74 can be 30nm~50nm, preferably 40nm；P in low temperature P-type layer 74
The doping concentration of type dopant can be 1020/cm3~1021/cm3, preferably 5*1020/cm3。
Optionally, as shown in Figure 1, the LED epitaxial slice can also include p-type contact layer 75, p-type contact layer 75
It is laid on p type semiconductor layer 50, to form Europe between the electrode or transparent conductive film that are formed in chip fabrication technique
Nurse contact.
Specifically, the material of p-type contact layer 75 can be using the InGaN of p-type doping.
Further, the thickness of p-type contact layer 75 can be 5nm~100nm, preferably 50nm；P in p-type contact layer 75
The doping concentration of type dopant can be 1021/cm3~1022/cm3, preferably 6*1021/cm3。
The embodiment of the invention provides a kind of growing methods of gallium nitride based LED epitaxial slice, are suitable for growth figure
Gallium nitride based LED epitaxial slice shown in 1.Fig. 4 is outside a kind of gallium nitride based light emitting diode that present invention implementation provides
Prolong the flow chart of the growing method of piece, referring to fig. 4, which includes:
Step 201: a substrate is provided.
Optionally, which can also include:
Substrate is pre-processed.
Specifically, pretreated mode may include chemical cleaning, high-temperature baking etc., to remove the impurity of substrate surface,
Improve the state of substrate surface.For example, carrying out the pretreatment of nitrogen purging and high-temperature baking to substrate.Wherein, high-temperature baking
Temperature can be 550 DEG C.
Preferably, substrate is pre-processed, may include
Step 202: grown buffer layer on substrate.
In the present embodiment, the material of buffer layer uses the aluminium nitride mixed with oxygen, buffer layer oxygen in the part of substrate
Doping concentration be greater than buffer layer oxygen in the part of n type semiconductor layer doping concentration.
In a kind of implementation of the present embodiment, which may include:
It places the substrate into the reaction chamber of growth apparatus；
Nitrogen and oxygen are passed through into reaction chamber, on substrate grown buffer layer, buffer layer is single layer structure, grows single layer
The constancy of volume for the nitrogen being passed through when structure, and the volume for the oxygen being passed through is gradually reduced.
A kind of signal of the variation pattern for the oxygen volume that Fig. 5 is passed through when being grown buffer layer provided in an embodiment of the present invention
Figure, referring to Fig. 5, in above-mentioned implementation, in the growth course of buffer layer, keeps the constancy of volume of nitrogen being passed through, by
The volume of the decrescence small oxygen being passed through, the doping concentration of oxygen accordingly reduces in the buffer layer of growth, i.e., oxygen mixes in single layer structure
Miscellaneous concentration is gradually reduced along the stacking direction of the gallium nitride based LED epitaxial slice.
Optionally, the flow of nitrogen when the maximum value of the flow of oxygen can be grown buffer layer when grown buffer layer
2.5%~10%, to match the maximum value of the molar concentration of oxygen in buffer layer.
Optionally, the flow of nitrogen when the minimum value of the flow of oxygen can be grown buffer layer when grown buffer layer
0%~5%, to match the minimum value of the molar concentration of oxygen in buffer layer.
Optionally, it is close can be less than grown buffer layer for the power of growth apparatus when grown buffer layer is close to the part of substrate
The power of growth apparatus when the part of n type semiconductor layer.When close to the region growing buffer layer of substrate, the power of growth apparatus
It is lower, it is possible to reduce arc discharge reduces the generation of particle, avoids polluting substrate；Simultaneously in the region far from substrate
When grown buffer layer, the power of growth apparatus is higher, can promote crystalline quality, provides pretty good rise to the growth of gallium nitride
Point, while the speed of growth of buffer layer is improved, improve production capacity.
In another implementation of the present embodiment, which may include:
It places the substrate into the reaction chamber of growth apparatus；
Nitrogen and oxygen are passed through into reaction chamber, on substrate grown buffer layer, buffer layer is laminated construction, grows lamination
The constancy of volume for the nitrogen being passed through when structure, and the volume for the oxygen being passed through successively reduces.
Another variation pattern for the oxygen volume that Fig. 6 is passed through when being grown buffer layer provided in an embodiment of the present invention shows
It is intended to, referring to Fig. 6, in above-mentioned implementation, in the growth course of buffer layer, keeps the constancy of volume of nitrogen being passed through,
Reduce the volume for the oxygen being passed through after the growth of each sublayer simultaneously, the doping concentration of oxygen accordingly reduces in each sublayer, i.e.,
The doping concentration of oxygen successively reduces along the stacking direction of the gallium nitride based LED epitaxial slice in laminated construction.
In specific implementation, the constancy of volume of nitrogen being passed through when growing laminated construction, and the volume for the oxygen being passed through by
Layer reduces, can in a reaction chamber grown buffer layer, while adjusting the volume of oxygen being passed through and realizing, can also successively exist
The volume difference of grown buffer layer in multiple reaction chambers, the oxygen being passed through in each reaction chamber is realized.When successively in the oxygen being passed through
In the different multiple reaction chambers of the volume of gas when grown buffer layer, the volume for the oxygen being passed through in each reaction chamber can be kept not
Become, the epidemic situation comparison of obtained sublayer is stablized, and grows the LED's that the epitaxial wafer of formation is finally made on the buffer layer of different heats
Performance inconsistency is smaller.
Optionally, the flow of nitrogen when the maximum value of the flow of oxygen can be grown buffer layer when grown buffer layer
2.5%~10%, to match the maximum value of the molar concentration of oxygen in buffer layer.
Optionally, the flow of nitrogen when the minimum value of the flow of oxygen can be grown buffer layer when grown buffer layer
0%~5%, to match the minimum value of the molar concentration of oxygen in buffer layer.
Optionally, it is close can be less than grown buffer layer for the power of growth apparatus when grown buffer layer is close to the part of substrate
The power of growth apparatus when the part of n type semiconductor layer.
It in practical applications, can be using physical vapour deposition (PVD) (English: Physical Vapor Deposition, letter
Claim: PVD) technology (mode of such as magnetron sputtering) grown buffer layer, metallo-organic compound chemical gaseous phase deposition can also be used
(English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) technology growth buffer layer.
Specifically, when using PVD technique grown buffer layer, the diameter of reaction chamber can be 50cm~60cm, reaction chamber
Height can be 70cm~80cm, sputtering voltage can be 10V~10kV, and the pressure in reaction chamber can be 3 × 10-5Torr
~1Torr；Reaction gas uses argon gas and nitrogen, and the flow for the argon gas being passed through in the reaction chamber of per unit volume is 1 ×
100sccm/m3~5 × 103sccm/m3, the flow for the nitrogen being passed through is 5 × 100sccm/m3~2 × 104sccm/m3, it is passed through
The flow of oxygen is 0sccm/m3~2 × 103sccm/m3。
For example, being placed the substrate into reaction chamber first when buffer layer is single layer structure；Then argon is passed through into reaction chamber
Gas, and apply dc power P1.Then controlling the temperature in reaction chamber is T (such as 500 DEG C), the pressure in reaction chamber be Q (such as
3mTorr~7mTorr)；Be passed through into reaction chamber flow be the argon gas of a (such as 30sccm~60sccm), flow be b (such as
100sccm~200sccm) nitrogen.Then it is passed through flow into reaction chamber and is the oxygen of c1 (such as 2sccm~6sccm), and applies
Add dc power P2 (such as 3000W~5000W), in buffer layer close to the higher nitridation of doping concentration of the region growing oxygen of substrate
Aluminium.After certain time (such as 5s~8s), gradual change is carried out to the dc power for the oxygen flow and application being passed through in reaction chamber.
It is finally passed through flow into reaction chamber and is the oxygen of c2 (such as 0sccm), and applies dc power P3 (such as 4500W~6500W),
Doping concentration lower aluminium nitride of the buffer layer close to the region growing oxygen of n type semiconductor layer.Wherein, P3 > P2 >=(5 × P1),
(c2/b) < (c1/b).The whole process duration can be 20s~30s, and the thickness of the gallium nitride layer of formation can be 10nm
~30nm.
For another example, it when buffer layer is laminated construction, places the substrate into reaction chamber first；Then argon is passed through into reaction chamber
Gas, and apply dc power P1.Then controlling the temperature in reaction chamber is T1 (such as 450 DEG C), the pressure in reaction chamber be Q1 (such as
3mTorr~7mTorr)；Be passed through into reaction chamber flow be the argon gas of a1 (such as 30sccm~60sccm), flow be b1 (such as
100sccm~200sccm) nitrogen and flow be c1 (such as 2sccm~6sccm) oxygen, and apply dc power P2 (such as
3000W~5000W), buffer layer close to the region growing oxygen of substrate the higher aluminium nitride of doping concentration (such as with a thickness of 5nm
~15nm).Gradual change is carried out to the dc power for the gas flow and application being passed through in reaction chamber again.Finally control in reaction chamber
Temperature is T2 (such as 500 DEG C), and the pressure in reaction chamber is Q2 (such as 3mTorr~7mTorr)；It is a2 that flow is passed through into reaction chamber
Argon gas, the flow of (such as a2=a1) are that the nitrogen of b2 (such as b2=b1) and flow are the oxygen of c2 (such as c2=c1/2), and apply
Dc power P3 (such as 4500W~6500W), it is lower close to the doping concentration of the region growing oxygen of n type semiconductor layer in buffer layer
Aluminium nitride (such as with a thickness of 5nm~10nm).Wherein, P3 > P2 >=(5 × P1), (c2/b2) < (c1/b1).
Step 203: successively growing n type semiconductor layer, active layer and p type semiconductor layer on the buffer layer.
In practical applications, MOCVD technology growth n type semiconductor layer, active layer and p type semiconductor layer can be used.
Specifically, which may include:
The first step, controlled at 1000 DEG C~1100 DEG C (preferably 1050 DEG C), pressure is 100torr~500torr
(preferably 300torr), grows n type semiconductor layer on the buffer layer；
Second step grows active layer on n type semiconductor layer；Wherein, the growth temperature of Quantum Well is 720 DEG C~800 DEG C
(preferably 760 DEG C), pressure are 100torr~500torr (preferably 300torr)；Quantum build growth temperature be 900 DEG C~
950 DEG C (preferably 925 DEG C), pressure is 100torr~500torr (preferably 300torr)；
Third step, controlled at 850 DEG C~950 DEG C (preferably 900 DEG C), pressure is that 100torr~300torr is (excellent
It is selected as 200torr), the growing P-type semiconductor layer on active layer.
Optionally, before the first step, which can also include:
High temperature buffer layer is grown on the buffer layer.
Correspondingly, n type semiconductor layer is grown on high temperature buffer layer.
Specifically, high temperature buffer layer is grown on the buffer layer, may include:
Controlled at 1000 DEG C~1040 DEG C (preferably 1020 DEG C), pressure be 400torr~600torr (preferably
500torr), growing three-dimensional nucleating layer on the buffer layer；
Controlled at 1040 DEG C~1080 DEG C (preferably 1060 DEG C), pressure be 400torr~600torr (preferably
500torr), two-dimentional retrieving layer is grown in three-dimensional nucleation；
Controlled at 1050 DEG C~1100 DEG C (preferably 1050 DEG C), pressure be 100torr~500torr (preferably
300torr), intrinsic gallium nitride layer is grown in two-dimentional retrieving layer.
Optionally, before second step, which can also include:
The growth stress releasing layer on n type semiconductor layer.
Correspondingly, active layer is grown on stress release layer.
Specifically, the growth stress releasing layer on n type semiconductor layer may include:
Controlled at 800 DEG C~1100 DEG C (preferably 950 DEG C), pressure be 100torr~500torr (preferably
300torr), the growth stress releasing layer on n type semiconductor layer.
Optionally, before third step, which can also include:
Electronic barrier layer is grown on active layer.
Correspondingly, p type semiconductor layer is grown on electronic barrier layer.
Specifically, electronic barrier layer is grown on active layer, may include:
Controlled at 900 DEG C~1000 DEG C (preferably 950 DEG C), pressure be 200torr~500torr (preferably
350torr), electronic barrier layer is grown on active layer.
Preferably, before growing electronic barrier layer on active layer, which can also include:
The growing low temperature P-type layer on active layer.
Correspondingly, electronic barrier layer is grown in low temperature P-type layer.
Specifically, the growing low temperature P-type layer on active layer may include:
Controlled at 750 DEG C~850 DEG C (preferably 800 DEG C), pressure be 100torr~500torr (preferably
300torr), the growing low temperature P-type layer on active layer.
Optionally, after third step, which can also include:
The growing P-type contact layer on p type semiconductor layer.
Specifically, the growing P-type contact layer on p type semiconductor layer may include:
Controlled at 850 DEG C~1000 DEG C (preferably 925 DEG C), pressure be 100torr~300torr (preferably
200torr), the growing P-type contact layer on p type semiconductor layer.
It should be noted that after above-mentioned epitaxial growth terminates, can first by temperature be reduced to 650 DEG C~850 DEG C (preferably
It is 750 DEG C), the annealing of 5 minutes~15 minutes (preferably 10 minutes) is carried out to epitaxial wafer in nitrogen atmosphere, then again
The temperature of epitaxial wafer is reduced to room temperature.
Control temperature, pressure each mean temperature, pressure in the reaction chamber of control growth epitaxial wafer, and specially metal is organic
Compound chemical gaseous phase deposition (English: Metal-organic Chemical Vapor Deposition, referred to as: MOCVD) set
Standby reaction chamber.Using trimethyl gallium or triethyl-gallium as gallium source when realization, high-purity ammonia is as nitrogen source, and trimethyl indium is as indium
Source, for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice includes substrate, buffering
Layer, n type semiconductor layer, active layer and p type semiconductor layer, the buffer layer, the n type semiconductor layer, the active layer and institute
It states p type semiconductor layer to stack gradually over the substrate, which is characterized in that the material of the buffer layer uses the nitridation mixed with oxygen
Aluminium, the doping concentration of buffer layer oxygen in the part of the substrate are greater than the buffer layer close to the N-type semiconductor
The doping concentration of oxygen in the part of layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the buffer layer is single layer
Structure, the doping concentration of oxygen gradually subtracts along the stacking direction of the gallium nitride based LED epitaxial slice in the single layer structure
It is small.
3. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the buffer layer is lamination
Structure, the doping concentration of oxygen successively subtracts along the stacking direction of the gallium nitride based LED epitaxial slice in the laminated construction
It is small.
4. gallium nitride based LED epitaxial slice according to claim 2 or 3, which is characterized in that in the buffer layer
The maximum value of the molar concentration of oxygen is 3%~20%, and the minimum value of the molar concentration of oxygen is 0%~8% in the buffer layer.
5. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that described slow
Rush layer with a thickness of 5nm~100nm.
6. a kind of growing method of gallium nitride based LED epitaxial slice, which is characterized in that the growing method includes:
One substrate is provided；
Grown buffer layer over the substrate；
N type semiconductor layer, active layer and p type semiconductor layer are successively grown on the buffer layer；
Wherein, the material of the buffer layer uses the aluminium nitride mixed with oxygen, buffer layer oxygen in the part of the substrate
Doping concentration be greater than buffer layer oxygen in the part of the n type semiconductor layer doping concentration.
7. growing method according to claim 6, which is characterized in that the grown buffer layer over the substrate, comprising:
The substrate is put into the reaction chamber of growth apparatus；
Nitrogen and oxygen being passed through into the reaction chamber, over the substrate grown buffer layer, the buffer layer is single layer structure,
The constancy of volume for the nitrogen being passed through when growing the single layer structure, and the volume for the oxygen being passed through is gradually reduced.
8. growing method according to claim 6, which is characterized in that the grown buffer layer over the substrate, comprising:
The substrate is put into the reaction chamber of growth apparatus；
Nitrogen and oxygen being passed through into the reaction chamber, over the substrate grown buffer layer, the buffer layer is laminated construction,
The constancy of volume for the nitrogen being passed through when growing the laminated construction, and the volume for the oxygen being passed through successively reduces.
9. growing method according to claim 7 or 8, which is characterized in that the flow of oxygen when growing the buffer layer
Maximum value is 2.5%~10% of the flow of nitrogen when growing the buffer layer, the flow of oxygen when growing the buffer layer
Minimum value is 0%~5% of the flow of nitrogen when growing the buffer layer.
10. growing method according to claim 7 or 8, which is characterized in that grow the buffer layer close to the substrate
The power of growth apparatus is less than the function of growth apparatus when growing the buffer layer close to the part of the n type semiconductor layer when part
Rate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810847761.9A CN109192827B (en) | 2018-07-27 | 2018-07-27 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810847761.9A CN109192827B (en) | 2018-07-27 | 2018-07-27 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109192827A true CN109192827A (en) | 2019-01-11 |
| CN109192827B CN109192827B (en) | 2020-12-22 |
Family
ID=64937745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810847761.9A Active CN109192827B (en) | 2018-07-27 | 2018-07-27 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109192827B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10242586A (en) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Group iii nitride semiconductor device and manufacture thereof |
| US20090289270A1 (en) * | 2008-05-23 | 2009-11-26 | Showa Denko K.K. | Group iii nitride semiconductor multilayer structure and production method thereof |
| CN105470357A (en) * | 2015-12-31 | 2016-04-06 | 华灿光电(苏州）有限公司 | AlN template, preparation method of AlN template and semiconductor device on AlN template |
| CN105590839A (en) * | 2016-03-22 | 2016-05-18 | 安徽三安光电有限公司 | Nitride bottom layer, light emitting diode and bottom layer preparation method |
| CN105633233A (en) * | 2015-12-31 | 2016-06-01 | 华灿光电(苏州）有限公司 | AlN template, preparation method of AlN template and semiconductor device on AlN template |
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
| CN106025026A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | AlN buffer layer for light emitting diode and manufacturing method thereof |
| CN107078030A (en) * | 2015-09-11 | 2017-08-18 | 国立大学法人三重大学 | Manufacture method, nitride semiconductor substrate and its heater of nitride semiconductor substrate |
-
2018
- 2018-07-27 CN CN201810847761.9A patent/CN109192827B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10242586A (en) * | 1997-02-24 | 1998-09-11 | Fuji Electric Co Ltd | Group iii nitride semiconductor device and manufacture thereof |
| US20090289270A1 (en) * | 2008-05-23 | 2009-11-26 | Showa Denko K.K. | Group iii nitride semiconductor multilayer structure and production method thereof |
| CN107078030A (en) * | 2015-09-11 | 2017-08-18 | 国立大学法人三重大学 | Manufacture method, nitride semiconductor substrate and its heater of nitride semiconductor substrate |
| CN105470357A (en) * | 2015-12-31 | 2016-04-06 | 华灿光电(苏州）有限公司 | AlN template, preparation method of AlN template and semiconductor device on AlN template |
| CN105633233A (en) * | 2015-12-31 | 2016-06-01 | 华灿光电(苏州）有限公司 | AlN template, preparation method of AlN template and semiconductor device on AlN template |
| CN105590839A (en) * | 2016-03-22 | 2016-05-18 | 安徽三安光电有限公司 | Nitride bottom layer, light emitting diode and bottom layer preparation method |
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
| CN106025026A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | AlN buffer layer for light emitting diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109192827B (en) | 2020-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101268139B1 (en) | Method for manufacturing iii nitride semiconductor light emitting element, iii nitride semiconductor light emitting element and lamp | |
| CN106601882B (en) | A kind of epitaxial wafer and its manufacturing method of light emitting diode | |
| CN109786529A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109860359A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109346576A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109346583A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109216514A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109920896A (en) | Gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN109786527A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109192831A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109256445A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN108198920A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN110364598A (en) | LED epitaxial slice and preparation method thereof | |
| CN108717954A (en) | A kind of LED epitaxial slice and its growing method | |
| CN109786513B (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
| CN109065682B (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109192829A (en) | A kind of gallium nitride based LED epitaxial slice and its growing method | |
| CN109103312A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109473516A (en) | A kind of gallium nitride based LED epitaxial slice and its growing method | |
| CN109346568A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN109309150A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109273571A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN109192826B (en) | A kind of LED epitaxial slice and preparation method thereof | |
| JP2009016505A (en) | Group iii nitride compound semiconductor light emitting element | |
| CN109686823A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |