CN105470357A - AlN template, preparation method of AlN template and semiconductor device on AlN template - Google Patents
AlN template, preparation method of AlN template and semiconductor device on AlN template Download PDFInfo
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- CN105470357A CN105470357A CN201511029761.0A CN201511029761A CN105470357A CN 105470357 A CN105470357 A CN 105470357A CN 201511029761 A CN201511029761 A CN 201511029761A CN 105470357 A CN105470357 A CN 105470357A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 97
- 239000001301 oxygen Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 150000004767 nitrides Chemical class 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 85
- 238000000151 deposition Methods 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 230000012010 growth Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000013507 mapping Methods 0.000 description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZWWCURLKEXEFQT-UHFFFAOYSA-N dinitrogen pentaoxide Chemical compound [O-][N+](=O)O[N+]([O-])=O ZWWCURLKEXEFQT-UHFFFAOYSA-N 0.000 description 2
- WFPZPJSADLPSON-UHFFFAOYSA-N dinitrogen tetraoxide Chemical compound [O-][N+](=O)[N+]([O-])=O WFPZPJSADLPSON-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000001963 growth medium Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 241001012508 Carpiodes cyprinus Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 238000001073 sample cooling Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an AlN template, a preparation method of the AlN template and a semiconductor device on the AlN template, and belongs to the technical field of semiconductors. The AlN template comprises a substrate and an AlN thin film, wherein the AlN thin film is deposited on the substrate and comprises a first AlN layer deposited on the substrate; the first AlN layer is doped with oxygen; and the content of the oxygen in the first AlN layer is gradually increased in the direction from an interface of the first AlN layer and the substrate to the surface of the first AlN layer. The semiconductor device comprises the AlN template and a nitride semiconductor layer, wherein the AlN template comprises the substrate and the AlN thin film deposited on the substrate; the nitride semiconductor layer is deposited on the AlN thin film; and the AlN template is the AlN template. The method comprises the steps as follows: the substrate is provided; the AlN thin film is deposited on the substrate and comprises the first AlN layer deposited on the substrate; the first AlN layer is doped with the oxygen; and the content of the oxygen in the first AlN layer is gradually increased in the direction from the interface of the first AlN layer and the substrate to the surface of the first AlN layer.
Description
Technical field
The present invention relates to technical field of semiconductors, the semiconductor device particularly in the preparation method of a kind of AlN template, AlN template and AlN template.
Background technology
At present, and most of GaN base blue light-emitting diode (English: lightemittingdiode, abbreviation: LED) adopt Sapphire Substrate with GaN base white light LEDs.Because sapphire and GaN material exist lattice mismatch and thermal mismatch problem always, and AlN material does not mate with only there being less lattice between GaN material, Sapphire Substrate, is therefore placed between Sapphire Substrate and GaN as resilient coating by AlN.Particularly, first grow an AlN resilient coating on a sapphire substrate, make AlN template, then in AlN template growing GaN extension, make LED.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
The lattice constant of AlN resilient coating is less than GaN and sapphire, the outer time delay of growing GaN in AlN template, larger compression is accumulated by causing follow-up GaN epitaxy, when the quantum well structure of growing GaN outer Yanzhong, epitaxial wafer is in warped state, make the growth temperature of quantum well structure uneven, epitaxial wafer wavelength uniformity is poor, thus causes the volume production cannot carrying out the epitaxial wafer of high yield.The luminescence generated by light that Fig. 1 shows the LED based on 4 inches of AlN templates is (English: photoluminescence, abbreviation: PL) Wavelength distribution is (English: mapping) figure, as seen from Figure 1, epitaxial wafer edge (A point) wavelength is 458nm, epitaxial wafer center (B point) wavelength is 468nm, the wavelength difference of center and peripheral reaches 10nm, the standard of wavelength variance of full wafer reaches 4.18nm, and qualified epitaxial wafer requires that standard of wavelength variance is 2nm, therefore this epitaxial wafer does not reach Eligibility requirements.
Summary of the invention
In order to solve the outer time delay of growing GaN in existing AlN template, cause compression in GaN epitaxy excessive, there is larger warpage in epitaxial wafer, the problem that epitaxial wafer wavelength uniformity is poor, embodiments provides the semiconductor device in a kind of AlN template, the preparation method of AlN template and AlN template.Described technical scheme is as follows:
First aspect, provides a kind of AlN template, the AlN film comprising substrate and deposit over the substrate,
Described AlN film is included in an AlN layer of described deposited on substrates, oxygen is mixed with in a described AlN layer, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in a described AlN layer increases gradually.
In the first execution mode of first aspect, a described AlN layer is laminated by some AlN sublayers, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in described some AlN sublayers successively increases; Oxygen in single described AlN sublayer is equally distributed, or the oxygen in single described AlN sublayer is uneven distribution.
In the second execution mode of first aspect, the quantity of described AlN sublayer is 1 ~ 50, and the thickness of described AlN sublayer is 1 ~ 10nm.
In the 3rd execution mode of first aspect, the thickness of described AlN film is 1nm ~ 1000nm; In described AlN film, the mol ratio of oxygen atom and nitrogen-atoms is not more than 50%.
In the 4th execution mode of first aspect, described AlN film is also included in the 2nd AlN layer that a described AlN layer deposits, and is mixed with oxygen in described 2nd AlN layer, and the oxygen in described 2nd AlN layer is equally distributed; And from a described AlN layer to described 2nd AlN layer, the content of oxygen increases gradually; The thickness of described 2nd AlN layer is greater than 1nm.
In the 5th execution mode of first aspect, the thickness of described 2nd AlN layer is 3nm ~ 5nm.
Second aspect, provide the semiconductor device in a kind of AlN template, comprise AlN template and nitride semiconductor layer, the AlN film that described AlN template comprises substrate and deposits over the substrate, described nitride semiconductor layer is deposited on described AlN film, and described AlN template is aforementioned AlN template.
The third aspect, provide a kind of preparation method of AlN template, described method comprises:
Substrate is provided;
Depositing Al N thin film over the substrate; Described AlN film is included in an AlN layer of described deposited on substrates, oxygen is mixed with in a described AlN layer, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in a described AlN layer increases gradually.
In the first execution mode of the third aspect, depositing Al N thin film over the substrate, comprising:
By described substrate arrangement in vacuum environment, and described substrate is toasted; Baking time is 1 ~ 15 minute, and baking temperature is 300 ~ 900 degrees Celsius, and baking pressure is less than 10
-7torr;
After completing baking, be mixed with Ar, N
2and O
2atmosphere or be mixed with Ar, N
2with under the atmosphere of oxygen-containing gas, Al target is sputtered, to deposit described AlN film over the substrate; Meanwhile, in deposition process, increase described O gradually
2or the flow of described oxygen-containing gas; Depositing temperature is 400 ~ 800 degrees Celsius, and deposition pressure is at 1 ~ 10mTorr, and sputtering power is 1KW ~ 10KW, and sputtering duration is 10 seconds ~ 1000 seconds.
In the second execution mode of the third aspect, described method also comprises:
As the O passed into
2or the flow of oxygen-containing gas is when reaching target flow, keep the O that current time passes into
2or the flow of oxygen-containing gas is constant, until deposition terminates.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By mixing O atom in an AlN layer, atom N in a part of O atom meeting substitute for Al N, another part O atom can form interstitial atom.Because O atomic radius is larger than atom N, this part displacement O atom and calking O atom, capital makes AlN lattice produce certain distortion, increase the lattice constant of AlN film, this by make the lattice constant of AlN film and follow-up GaN epitaxial film closer to, thus be conducive to reducing the compression in GaN material, improve the warpage of epitaxial wafer during grown quantum trap, and then improve the wavelength uniformity based on AlN template upper epitaxial layer.Test shows, the O mixed is more, and wavelength uniformity is better, but, in AlN film, mix too much O can make the crystal mass of AlN film itself occur declining, and then affects the crystal mass of follow-up GaN epitaxial film, can not embody the advantage that AlN template crystal mass is good.And pass through from an AlN layer and substrate interface to the direction on the surface of an AlN layer, the content of the oxygen in the one AlN layer increases gradually, like this, first in AlN film, mix less oxygen, increase the content mixing oxygen more gradually, oxygen-doped amount less above can make AlN film possess good crystal mass, thus embodies the advantage that in AlN template, GaN epitaxial film crystal mass is good; Oxygen-doped amount more below, by making the lattice constant of AlN film more close with follow-up GaN epitaxial film, reduces the compression in follow-up GaN epitaxial film, thus improves the wavelength uniformity of LED.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is that the PL wavelength mapping of the LED based on existing 4 inches of AlN Template preparation provided by the invention schemes;
Fig. 2 is the structural representation of a kind of AlN template that first embodiment of the invention provides;
Fig. 3 is the structural representation of a kind of AlN template that second embodiment of the invention provides;
Fig. 4 is the structural representation of a kind of AlN template that third embodiment of the invention provides;
Fig. 5 is the flow chart of the preparation method of a kind of AlN template that fourth embodiment of the invention provides;
Fig. 6 is the structural representation of the semiconductor device in a kind of AlN template of providing of fifth embodiment of the invention;
Fig. 7 is that the PL wavelength mapping of 4 inches of LED that fifth embodiment of the invention provides schemes.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Fig. 2 shows a kind of AlN template that first embodiment of the invention provides, as shown in Figure 2, and the AlN film that this AlN template comprises substrate 10 and deposits over the substrate 10.Wherein, this AlN film comprises in AlN layer the 11, one AlN layer 11 deposited over the substrate 10 and is mixed with oxygen (O).And from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in an AlN layer 11 increases gradually.
Wherein, substrate 10 includes but not limited to Si, SiC, sapphire, ZnO, GaAs, GaP, MgO, Cu and W substrate.
The O atom mixed in one AlN layer 11, atom N in part meeting substitute for Al N, another part can form interstitial atom.Because O atomic radius is larger than atom N, this part displacement O atom and calking O atom, capital makes AlN lattice produce certain distortion, increase the lattice constant of AlN film, this by make the lattice constant of AlN film and follow-up GaN epitaxial film closer to, thus be conducive to reducing the compression in GaN material, improve the warpage of epitaxial wafer during grown quantum trap, and then improve the wavelength uniformity based on AlN template upper epitaxial layer.Test shows, the O mixed is more, and wavelength uniformity is better, but, in AlN film, mix too much O can make the crystal mass of AlN film itself occur declining, and then affects the crystal mass of follow-up GaN epitaxial film, can not embody the advantage that AlN template crystal mass is good.And pass through from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in the one AlN layer 11 increases gradually, like this, first in AlN film, mix less oxygen, increase the content mixing oxygen more gradually, oxygen-doped amount less above can make AlN film possess good crystal mass, thus embodies the advantage that in AlN template, GaN epitaxial film crystal mass is good; Oxygen-doped amount more below, by making the lattice constant of AlN film more close with follow-up GaN epitaxial film, reduces the compression in follow-up GaN epitaxial film, thus improves the wavelength uniformity of LED.
Further, the mode adopting doped with oxygen to increase gradually in AlN film, the AlN template surface oxygen component of preparation is the highest, can improve the oxidation resistance of AlN template long-term storage like this, improves stability and the consistency of AlN template in volume production.
Particularly, physical vapour deposition (PVD) (English: PhysicalVaporDeposition, abbreviation: PVD) technique or electron beam evaporation process depositing Al N thin film over the substrate 10 can be adopted.The oxygen mixed in AlN film can derive from the oxygen or oxygen-containing gas that mix in the film forming procedure of AlN film.Oxygen-containing gas includes but not limited to hydrogen oxide (H
2o), carbon monoxide (CO), carbon dioxide (CO
2), nitrous oxide (N
2o), nitric oxide (NO), nitrogen dioxide (NO
2), nitrogen trioxide (N
2o
3), dinitrogen tetroxide (N
2o
4) and dinitrogen pentoxide (N
2o
5).
Wherein, from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in the one AlN layer 11 can be increase in a continuously variable manner, also can be increase in the mode of interval variation, can also be increase in mode consecutive variations and interval variation two kinds of modes combined.
When realizing, can in the film forming procedure of AlN film, the flow controlling oxygen or the oxygen-containing gas mixed increases progressively in time, and such as increase progressively linearly over time, like this, the content of the oxygen in an AlN layer 11 increases in a continuously variable manner.Similar, in the film forming procedure of AlN film, can increase the flow of oxygen or the oxygen-containing gas mixed at interval of certain hour, like this, the content of the oxygen in an AlN layer 11 increases in the mode of interval variation.Similar, can in the film forming procedure of AlN film, the flow controlling oxygen or the oxygen-containing gas mixed in a period of time increases progressively in time, the flow controlling oxygen or the oxygen-containing gas mixed in another a period of time increases at interval of certain hour, like this, the content of the oxygen in an AlN layer 11 increases in mode consecutive variations and interval variation two kinds of modes combined.
Wherein, the thickness of AlN film can be 1nm ~ 1000nm.In AlN film, the mol ratio of oxygen atom and nitrogen-atoms is not more than 50%.
Increase mode by the content of oxygen in control AlN film and the content of oxygen, complementation of can arranging in pairs or groups flexibly with follow-up GaN epitaxy growth technique, can all realize preferably LED wavelength uniformity on different GaN epitaxy growth technique.
When realizing, this AlN template is applicable to growing GaN extension, such as, make GaN base LED.
Fig. 3 shows a kind of AlN template that second embodiment of the invention provides.In the present embodiment, be introduced to the AlN layer 11 in the first embodiment.As shown in Figure 3, an AlN layer 11 is laminated by some AlN sublayers 31, and from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in some AlN sublayers 31 successively increases.
Wherein, from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in single AlN sublayer 31 is constant, and the oxygen namely in single AlN sublayer 31 is equally distributed, at this moment, the content of the oxygen in an AlN layer 11 increases in the mode of interval variation.Or, from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, the content of the oxygen in single AlN sublayer 31 is gradual change (such as increasing progressively), namely the oxygen in single AlN sublayer 31 is uneven distribution, at this moment, the content of the oxygen in an AlN layer 11 increases in a continuously variable manner.Or, from an AlN layer 11 and the direction of substrate 10 interface to the surface of an AlN layer 11, in some AlN sublayers 31, the content of the oxygen in part AlN sublayer 31 is constant, the content of the oxygen in another part AlN sublayer 31 increases progressively, at this moment, the content of the oxygen in an AlN layer 11 increases in mode consecutive variations and interval variation two kinds of modes combined.
Wherein, the thickness of any two AlN sublayers 31 can be identical, also can be different.
Optionally, the quantity of AlN sublayer 31 is the thickness of 1 ~ 50, AlN sublayer 31 is 1 ~ 10nm.
Preferably, the quantity of AlN sublayer 31 is the thickness of 5 ~ 10, AlN sublayer 31 is 2 ~ 5nm.
As preferred embodiment, the oxygen in single AlN sublayer 31 is equally distributed.When the oxygen in single AlN sublayer 31 be uniformly distributed time, will each AlN sublayer 31 be made to have certain thickness, every layer thickness be better at 1-10nm, is preferably 2-5nm.Certain thickness oxygen-doped AlN sublayer 31, by making AlN film have sufficient time and the stress that brings of thickness release oxygen atom, realizes good AlN crystalline film layer crystal weight simultaneously.
Fig. 4 shows a kind of AlN template that third embodiment of the invention provides.As shown in Figure 4, this AlN template AlN film of comprising substrate 10 and depositing over the substrate 10.Wherein, AlN film comprises the AlN layer 11 of stacked above one another on substrate and the 2nd AlN layer 12.
Wherein, the structure of an AlN layer 11 is identical with the structure of the AlN layer 11 that the first embodiment or the second embodiment describe, and does not repeat them here.
Wherein, be mixed with oxygen in the 2nd AlN layer 12, the oxygen in the 2nd AlN layer 12 is equally distributed, and from AlN layer 11 to a two AlN layer 12, the content of oxygen increases gradually.The thickness of the 2nd AlN layer 12 is greater than 1nm.
Preferably, the thickness of the 2nd AlN layer 12 is 3nm ~ 5nm.
The 2nd AlN layer 12 of 1nm is greater than by the top layer of AlN film being set to thickness, oxygen in 2nd AlN layer 12 is equally distributed, this can make the stress state on AlN template top layer keep stable with consistent to greatest extent, guarantee that the AlN template stress stability that different batches is produced is controlled, in batch production, be conducive to realizing the stable of stress in follow-up GaN epitaxial layer, thus realize the stability contorting of batch growth medium wavelength uniformity to greatest extent.
Fig. 5 shows the preparation method of a kind of AlN template that fourth embodiment of the invention provides, and is applicable to the AlN template that in the first to the 3rd embodiment, any embodiment provides.As shown in Figure 5, the method comprises the steps.
Step 501, provide substrate.
This substrate can be Si, SiC, sapphire, ZnO, GaAs, GaP, MgO, Cu and W substrate.Preferably, this substrate is Sapphire Substrate.
Step 502, at deposited on substrates AlN film.
Wherein, AlN film is included in an AlN layer of deposited on substrates, is mixed with oxygen in an AlN layer, and from an AlN layer and substrate interface to the direction on the surface of an AlN layer, the content of the oxygen in an AlN layer increases gradually.
To adopt PVD technique depositing Al N thin film over the substrate 10, introduce the deposition process of AlN film, this deposition process comprises step 5021 and step 5022.
Step 5021, by substrate arrangement in vacuum environment, and substrate to be toasted; Baking time is 1 ~ 15 minute, and baking temperature is 300 ~ 900 degrees Celsius, and baking pressure is less than 10
-7torr.
Particularly, first, substrate is positioned on the pallet of SiC material, and pallet is put into PVD sputtering machine table, and be sent to board deposition chambers.Secondly, after substrate is put into, deposition chambers is vacuumized, start while vacuumizing to carry out heat temperature raising to substrate.Base vacuum is evacuated to lower than 10
-7during Torr, heating-up temperature is stabilized in 300 ~ 900 degrees Celsius, toasts substrate, baking time is 1 ~ 15 minute.
Step 5022, complete baking after, be mixed with Ar, N
2and O
2atmosphere or be mixed with Ar, N
2with under the atmosphere of oxygen-containing gas, Al target is sputtered, with at deposited on substrates AlN film; Meanwhile, in deposition process, increase O gradually
2or the flow of oxygen-containing gas; Depositing temperature is 400 ~ 800 degrees Celsius, and deposition pressure is 1 ~ 10mTorr, and sputtering power is 1KW ~ 10KW, and sputtering duration is 10 seconds ~ 1000 seconds.
Wherein, this sputtering duration is the sedimentation time of AlN film.Sputtering power and sputtering duration affect the thickness of AlN film, and when sputtering power is 1KW ~ 10KW, when sputtering duration is 10 seconds ~ 1000 seconds, the thickness of AlN film is 1 ~ 1000nm.
Particularly, after completing baking, pass into Ar, N
2and O
2(O
2can be substituted by oxygen-containing gas).Wherein, Ar:N
2flow-rate ratio can be 1:3 ~ 1:10, the O that initial time passes into
2flow can be Ar and N
2both flows and 0.1%, 0.2% or 0.5%.In deposition process, Ar, N
2and O
2it is good that PVD deposition chambers pressure is maintained 1 ~ 10mTorr by the total gas couette of three.Meanwhile, substrate heating temperature is set to depositing temperature, good deposition temperature range is between 400 ~ 800 degrees Celsius.After depositing temperature is stablized 10 ~ 60 seconds, open shielding power supply, Al target is sputtered, now will be mixed with the AlN crystalline membrane of oxygen at deposited on substrates.Wherein, sputtering power can be set as 1KW ~ 10KW depending on the requirement of deposition rate, and sputtering duration is 10 seconds ~ 1000 seconds depending on the different set of AlN crystalline membrane thickness.Meanwhile, in the deposition process of AlN crystalline membrane, increase the O passed into gradually
2flow.The O passed into
2the mode that increases of flow can be increase continuously, such as linear increment, like this, the content of the oxygen in the AlN film of deposition is continually varying.This increases mode also can be that interval is increased, and such as ladder increases progressively, and like this, the AlN film of deposition is stepped construction, and the content of oxygen in AlN film is interval variation.This increases mode can also be to increase continuously and interval is increased to combine and increased, such as first linear increment again ladder increase progressively.
Suppose that the content of the oxygen in the AlN film deposited increases progressively from substrate/AlN film interface to the direction ladder on the surface of AlN film, so, when depositing Al N thin film, 5 ~ 10 layer growths can be divided by AlN film, in every layer, oxygen is uniformly distributed, the content successively gradual change of the oxygen in 5 ~ 10 layers.Comprise 6 AlN sublayers for AlN film, when depositing Al N thin film, the sputtering power that can set Al target is 3KW; 1st AlN sublayer is to the 6th AlN sublayer, and the deposition duration of each AlN sublayer is 10 seconds, and the deposit thickness of each like this AlN sublayer is about 4nm.Further, the O passed into during growth regulation 1 AlN sublayer
2flow is Ar, N
2flow and 0.5%, the oxygen flow passed into during growth the 2 to 6 AlN sublayer is thereafter adjusted to Ar and N successively
2flow and 1%, 3%, 5%, 10%, 15%.So just having prepared gross thickness is that 24nm is thick, divides 6 layers of AlN template of carrying out oxygen doping amount layering gradual change.
Suppose the AlN film deposited be in the content of oxygen increase progressively from substrate/AlN film interface to the dimension linear on the surface of AlN film, so, when depositing Al N thin film, linearly can increase the flow of oxygen or the oxygen-containing gas passed into.Such as, in the deposition process of AlN crystalline membrane, the sputtering power that can set Al target is 2KW, and sputtering duration is 100 seconds, and now the thickness of AlN crystalline membrane is about 25nm.Meanwhile, in these 100 seconds, by O
2flow is by Ar and N
2both flows and 10% linear increment to Ar and N
2both flows and 12%.
Optionally, AlN film is also included in the 2nd AlN layer that an AlN layer deposits, and is mixed with oxygen in the 2nd AlN layer, and the oxygen in the 2nd AlN layer is equally distributed; And from an AlN layer to the 2nd AlN layer, the content of oxygen increases gradually; The thickness of the 2nd AlN layer is greater than 1nm.Then, this deposition process also comprises step 5023.
Step 5023, as the O passed into
2or the flow of oxygen-containing gas is when reaching target flow, keep the O that current time passes into
2or the flow of oxygen-containing gas is constant, until deposition terminates.
By this step 5023, can deposit the 2nd AlN layer, the thickness of the 2nd AlN layer is at least greater than 1nm.Optionally, the thickness of the 2nd AlN layer is 3 to 5nm.Such as, suppose that whole deposition process maintains 300 seconds (sputtering duration); Sputtering power is 4KW, the O that initial time passes into
2flow is Ar, N
2flow and 0.2%.In first 285 seconds, by the O passed into
2flow is Ar, N
2flow and 12% linear increment to 10%, in latter 15 seconds, keep O
2flow is Ar and N
2flow and 10% constant, continuing sputtering 15 second, is the AlN template that the oxygen-doped amount of about 3nm keeps the 2nd stable AlN layer by obtaining top layer.
2nd AlN layer keeps stable with consistent to greatest extent by making the stress state on AlN template top layer, guarantee that the AlN template stress stability that different batches is produced is controlled, in batch production, be conducive to realizing the stable of stress in follow-up GaN epitaxial layer, thus realize the stability contorting of batch growth medium wavelength uniformity to greatest extent.
After deposition, pallet is spread out of deposition chambers, after sample cooling, namely obtain required AlN template.
Fig. 6 shows the semiconductor device in a kind of AlN template that fifth embodiment of the invention provides, and as shown in Figure 6, this semiconductor device comprises AlN template 61 and nitride semiconductor layer 62.AlN template 61 comprises substrate 611 and the AlN film 612 at deposited on substrates, and nitride semiconductor layer 62 is deposited on AlN film 612.
Wherein, the AlN template that this AlN template 61 can be the first embodiment, the second embodiment or the 3rd embodiment provide, does not repeat them here.The preparation method of this AlN template 61 can see the 4th embodiment.
Wherein, this nitride semiconductor layer 62 can comprise the single or multiple lift N-shaped nitride layer 621 of stacked above one another on AlN film 612, single or multiple lift nitride multiple quantum well active layer 622, single or multiple lift p-type nitride layer 623 and nitride contact layer (scheming not shown).Wherein, the quantum barrier layer in nitride multiple quantum well active layer 622 comprises In; P-type nitride layer 623 comprises one or more layers electronic barrier layer comprising Al; Nitride contact layer comprises N-shaped and p-type nitride contact layer, and N-shaped nitride contact layer is for the formation of n-electrode, and N-shaped nitride contact layer is positioned on single or multiple lift N-shaped nitride layer 621; P-type nitride contact layer is for the formation of p-electrode, and p-type nitride contact layer is positioned in single or multiple lift p-type nitride layer 623.
Optionally, this nitride semiconductor layer 62 can be GaN base LED epitaxial loayer.Preferably, GaN base LED epitaxial loayer comprises the first high-temperature gan layer be sequentially laminated on AlN film, the second high-temperature gan layer, n-type GaN layer, multiple quantum well active layer, p-type AlGaN electronic barrier layer, p-type GaN layer and p-type InGaN contact layer.
When realizing, this GaN base LED epitaxial loayer can adopt metallo-organic compound chemical gaseous phase deposition (English: Metal-organicChemicalVaporDeposition, abbreviation: MOCVD) technique growth.
Particularly, the growth temperature of the first high-temperature gan layer is 950 ~ 1050 degrees Celsius, is 1000 degrees Celsius preferably, and growth pressure is 50 ~ 600Torr, and the thickness of the first high-temperature gan layer is 0.5 ~ 3 micron.
The growth temperature of the second high-temperature gan layer is 1020-1100 degree Celsius, is 1060 degrees Celsius preferably, and growth pressure is 50 ~ 600Torr, the thickness of the second high-temperature gan layer 0.2 ~ 3 micron.Wherein, Si can not be mixed in the second high-temperature gan layer or gently mix Si.During doping Si, Si doping content is not more than 2 × 10
18cm
-3, good Si doping content is 8 × 10
17cm
-3.
The growth temperature of n-type GaN layer is 1020-1100 degree Celsius, is 1060 degrees Celsius preferably, and growth pressure is 50 ~ 600Torr, and the thickness of n-type GaN layer is 0.5 ~ 3 micron, and N-shaped realizes by mixing Si, and Si doping content is 2 × 10
18~ 5 × 10
19cm
-3, good Si doping content is 1 × 10
19cm
-3.
In multiple quantum well active layer, quantum well is InGaN quantum well, wherein In content depending on different wave length need can be controlled in 1 ~ 30%, if wavelength is that in the purple LED of 390nm, In content controls 3%, wavelength is that in the blue-ray LED of 450nm, In content controls 13%, and wavelength is that in the green light LED of 520nm, In content controls 20%.The thickness of quantum well is 1 ~ 5nm, and the thickness of good quantum well is 3nm.The material that quantum is built is that AlGaN, Al content can be controlled in and is not more than 30%, and the thickness that quantum is built is 3 ~ 50nm, and the thickness that good quantum is built is 12nm.The quantity that quantum well is right is 1 ~ 20, is 10 quantum well pair preferably.
The growth temperature of p-type AlGaN electronic barrier layer is 800 ~ 950 degrees Celsius, and Al content can be controlled in 10 ~ 30%, and the thickness of p-type AlGaN electronic barrier layer is 10 ~ 50nm, and the thickness of good p-type AlGaN electronic barrier layer is 25nm.P-type realizes by mixing Mg, and the doping content of Mg is 1 × 10
18~ 1 × 10
20cm
-3.
The growth temperature of P type GaN layer is 800 ~ 950 degrees Celsius, and the thickness of P type GaN layer is 20 ~ 500nm, and the thickness of good P type GaN layer is 70nm.P-type realizes by mixing Mg, and the doping content of Mg is 1 × 10
18~ 1 × 10
20cm
-3.
In P type InGaN contact layer, it is 0.5 ~ 10nm that In content can be controlled in the thickness being not more than 20%, P type InGaN contact layer.P-type realizes by mixing Mg, and P type doping content is higher, and be beneficial to follow-up chip manufacture and form ohmic contact, Mg doping content is 5 × 10
19~ 1 × 10
22cm
-3.
When realizing, the method that can be provided by the 4th embodiment prepares 4 inches or 6 inches of AlN templates, then adopts above-mentioned MOCVD technique growing GaN base LED epitaxial loayer on 4 inches or 6 inches of AlN templates, obtains 4 inches or 6 inches of LED.The PL wavelength mapping that Fig. 7 shows 4 inches of LED schemes, as can be seen from Figure 7, center (E point) wavelength of this epitaxial wafer is close to 460nm, edge (F point) wavelength of epitaxial wafer is close to 462nm, center and peripheral wavelength difference is about 2nm, the standard of wavelength variance of full wafer is 1.71nm, compared with the LED (standard of wavelength variance is 4.18nm) based on existing AlN Template preparation, standard of wavelength variance reduces close to 2.5nm, and wavelength uniformity obtains the improvement of essence.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an AlN template, the AlN film comprising substrate and deposit over the substrate, is characterized in that,
Described AlN film is included in an AlN layer of described deposited on substrates, oxygen is mixed with in a described AlN layer, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in a described AlN layer increases gradually.
2. AlN template according to claim 1, it is characterized in that, a described AlN layer is laminated by some AlN sublayers, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in described some AlN sublayers successively increases; Oxygen in single described AlN sublayer is equally distributed, or the oxygen in single described AlN sublayer is uneven distribution.
3. AlN template according to claim 2, is characterized in that, the quantity of described AlN sublayer is 1 ~ 50, and the thickness of described AlN sublayer is 1 ~ 10nm.
4. AlN template according to claim 1, is characterized in that, the thickness of described AlN film is 1nm ~ 1000nm; In described AlN film, the mol ratio of oxygen atom and nitrogen-atoms is not more than 50%.
5. AlN template according to claim 1, is characterized in that, described AlN film is also included in the 2nd AlN layer that a described AlN layer deposits, and is mixed with oxygen in described 2nd AlN layer, and the oxygen in described 2nd AlN layer is equally distributed; And from a described AlN layer to described 2nd AlN layer, the content of oxygen increases gradually; The thickness of described 2nd AlN layer is greater than 1nm.
6. AlN template according to claim 5, is characterized in that, the thickness of described 2nd AlN layer is 3nm ~ 5nm.
7. the semiconductor device in AlN template, comprises AlN template and nitride semiconductor layer, the AlN film that described AlN template comprises substrate and deposits over the substrate, and described nitride semiconductor layer is deposited on described AlN film, it is characterized in that,
The AlN template of described AlN template according to any one of claim 1 to 6.
8. a preparation method for AlN template, is characterized in that, described method comprises:
Substrate is provided;
Depositing Al N thin film over the substrate; Described AlN film is included in an AlN layer of described deposited on substrates, oxygen is mixed with in a described AlN layer, and from a described AlN layer and described substrate interface to the direction on the surface of a described AlN layer, the content of the oxygen in a described AlN layer increases gradually.
9. method according to claim 8, is characterized in that, over the substrate depositing Al N thin film, comprising:
By described substrate arrangement in vacuum environment, and described substrate is toasted; Baking time is 1 ~ 15 minute, and baking temperature is 300 ~ 900 degrees Celsius, and baking pressure is less than 10
-7torr;
After completing baking, be mixed with Ar, N
2and O
2atmosphere or be mixed with Ar, N
2with under the atmosphere of oxygen-containing gas, Al target is sputtered, to deposit described AlN film over the substrate; Meanwhile, in deposition process, increase described O gradually
2or the flow of described oxygen-containing gas; Depositing temperature is 400 ~ 800 degrees Celsius, and deposition pressure is at 1 ~ 10mTorr, and sputtering power is 1KW ~ 10KW, and sputtering duration is 10 seconds ~ 1000 seconds.
10. method according to claim 9, is characterized in that, described method also comprises:
As the O passed into
2or the flow of oxygen-containing gas is when reaching target flow, keep the O that current time passes into
2or the flow of oxygen-containing gas is constant, until deposition terminates.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025026A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | AlN buffer layer for light emitting diode and manufacturing method thereof |
| CN109192827A (en) * | 2018-07-27 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN109638117A (en) * | 2018-11-29 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of AlN template, epitaxial slice structure and manufacturing method |
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| CN109888063A (en) * | 2019-01-23 | 2019-06-14 | 华灿光电（浙江）有限公司 | The preparation method of AlN template and gallium nitride based LED epitaxial slice |
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| CN112768614A (en) * | 2020-12-28 | 2021-05-07 | 华灿光电（浙江）有限公司 | Quantum dot light-emitting diode and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004346336A (en) * | 2003-05-16 | 2004-12-09 | National Institute Of Advanced Industrial & Technology | Laminate containing wurtzite crystalline layer and its manufacturing method |
| JP2008135463A (en) * | 2006-11-27 | 2008-06-12 | Showa Denko Kk | Manufacturing method of group iii nitride semiconductor, manufacturing method of group iii nitride semiconductor light-emitting element, group iii nitride semiconductor light-emitting element and lamp |
| JP2010518615A (en) * | 2007-02-09 | 2010-05-27 | ナノガン リミテッド | Semiconductor device manufacturing method and semiconductor device |
| CN102418145A (en) * | 2011-10-18 | 2012-04-18 | 湘能华磊光电股份有限公司 | Method for growing GaN-based LED (Light Emitting Diode) on patterned substrate |
| CN102884644A (en) * | 2010-03-01 | 2013-01-16 | 夏普株式会社 | Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device |
| CN103069583A (en) * | 2010-08-26 | 2013-04-24 | 欧司朗光电半导体有限公司 | Semiconductor component and method for producing a semiconductor component |
| WO2015121399A1 (en) * | 2014-02-17 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
| CN105121693A (en) * | 2013-03-14 | 2015-12-02 | 应用材料公司 | Oxygen controlled PVD AIN buffer for Gan-based optoelectronic and electronic devices |
-
2015
- 2015-12-31 CN CN201511029761.0A patent/CN105470357B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004346336A (en) * | 2003-05-16 | 2004-12-09 | National Institute Of Advanced Industrial & Technology | Laminate containing wurtzite crystalline layer and its manufacturing method |
| JP2008135463A (en) * | 2006-11-27 | 2008-06-12 | Showa Denko Kk | Manufacturing method of group iii nitride semiconductor, manufacturing method of group iii nitride semiconductor light-emitting element, group iii nitride semiconductor light-emitting element and lamp |
| JP2010518615A (en) * | 2007-02-09 | 2010-05-27 | ナノガン リミテッド | Semiconductor device manufacturing method and semiconductor device |
| CN102884644A (en) * | 2010-03-01 | 2013-01-16 | 夏普株式会社 | Process for production of nitride semiconductor element, nitride semiconductor light-emitting element, and light-emitting device |
| CN103069583A (en) * | 2010-08-26 | 2013-04-24 | 欧司朗光电半导体有限公司 | Semiconductor component and method for producing a semiconductor component |
| CN102418145A (en) * | 2011-10-18 | 2012-04-18 | 湘能华磊光电股份有限公司 | Method for growing GaN-based LED (Light Emitting Diode) on patterned substrate |
| CN105121693A (en) * | 2013-03-14 | 2015-12-02 | 应用材料公司 | Oxygen controlled PVD AIN buffer for Gan-based optoelectronic and electronic devices |
| WO2015121399A1 (en) * | 2014-02-17 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025026A (en) * | 2016-07-15 | 2016-10-12 | 厦门乾照光电股份有限公司 | AlN buffer layer for light emitting diode and manufacturing method thereof |
| CN106025026B (en) * | 2016-07-15 | 2018-06-19 | 厦门乾照光电股份有限公司 | It is a kind of for AlN buffer layers of light emitting diode and preparation method thereof |
| US20200220325A1 (en) * | 2017-08-30 | 2020-07-09 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| US11527865B2 (en) * | 2017-08-30 | 2022-12-13 | Osram Oled Gmbh | Optoelectronic semiconductor component |
| CN109192827A (en) * | 2018-07-27 | 2019-01-11 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN109638117A (en) * | 2018-11-29 | 2019-04-16 | 华灿光电（浙江）有限公司 | A kind of AlN template, epitaxial slice structure and manufacturing method |
| CN109671819A (en) * | 2018-11-30 | 2019-04-23 | 华灿光电（浙江）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
| CN109888070A (en) * | 2019-01-22 | 2019-06-14 | 华灿光电（浙江）有限公司 | AlN template, LED epitaxial slice and its manufacturing method |
| CN109888063A (en) * | 2019-01-23 | 2019-06-14 | 华灿光电（浙江）有限公司 | The preparation method of AlN template and gallium nitride based LED epitaxial slice |
| CN109888063B (en) * | 2019-01-23 | 2020-07-07 | 华灿光电（浙江）有限公司 | Preparation method of AlN template and gallium nitride-based light-emitting diode epitaxial wafer |
| CN112768614A (en) * | 2020-12-28 | 2021-05-07 | 华灿光电（浙江）有限公司 | Quantum dot light-emitting diode and preparation method thereof |
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