CN109148480A - 阵列基板 - Google Patents
阵列基板 Download PDFInfo
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- CN109148480A CN109148480A CN201810951224.9A CN201810951224A CN109148480A CN 109148480 A CN109148480 A CN 109148480A CN 201810951224 A CN201810951224 A CN 201810951224A CN 109148480 A CN109148480 A CN 109148480A
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- 239000000758 substrate Substances 0.000 title claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 194
- 229910052751 metal Inorganic materials 0.000 claims abstract description 194
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 12
- 238000003860 storage Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Abstract
本发明提供了一种阵列基板,包括:衬底基板;设置在所述衬底基板之上的第一金属设置在所述第一金属之上的第一缓冲层;设置在所述第一缓冲层之上的第二金属;设置在所述第二金属之上的第二缓冲层;设置在所述第二缓冲层之上的第三金属;其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属通过所述过孔与所述第三金属电连接,所述第一金属、所述第二金属和所述第三金属组成并联电容。本发明通过将栅极金属与电容金属或源漏极金属相连,使栅极金属、源漏极金属和电容金属之间的电容并联,进而在保持单个像素面积不变的前提下增加补偿电路的电容,以实现显示面板的高清晰度。
Description
技术领域
本发明涉及显示领域,具体涉及一种阵列基板。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)显示面板因具有因为具备轻薄、节能、宽视角、色域广、对比度高等特性而备受人们的青睐,有机发光二极管显示面板分为被动式有机发光二极管显示面板(PMOLED)和主动式有机发光二极管显示面板(AMOLED)。
然而,AMOLED显示面板仍然有较明显的缺陷。例如:由于面板制作不均匀,各个驱动薄膜晶体管的阈值电压不同,导致像素间发光存在显示差异,现有技术采用补偿电路的方式降低像素之间的发光的显示差异。
在像素电路的补偿电路中,电容作为关键部件用来存储薄膜晶体管的开启电位和补偿电位;因此,电容的性能好坏在像素电路的工作过程中起到重要的作用。
通常的,为了维护像素中电容一端电位的稳定性,我们需要在像素空间内尽可能的增大存储电容的大小,但是随着显示面板的高清化需要,显示面板的像素清晰度越高,存储电容的面积就变的越小。如图1所示为现有阵列基板中所采用存储电容的结构,其中,第一栅极12和第二栅极13组成的存储电容占据了阵列基板较大的空间,存储电容的大小成为限制显示面板像素提升的原因。因此,目前亟需一种阵列基板以解决上述问题。
发明内容
本发明提供了一种阵列基板,以解决现有显示面板中,阵列基板的高像素值设置与补偿电路中的存储电容增大需求不能同时满足的问题。
本发明提出了一种阵列基板,包括:
衬底基板;
设置在所述衬底基板之上的第一金属;
设置在所述第一金属之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属;
设置在所述第二金属之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属通过所述过孔与所述第三金属电连接,所述第一金属、所述第二金属和所述第三金属组成并联电容。
根据本发明一优选实施例,所述第一金属为栅极金属,所述第三金属位于所述阵列基板的源漏极金属层。
根据本发明一优选实施例,所述衬底基板与所述第一金属之间设置有多晶硅层,所述多晶硅层包括中部的沟道区和两端的掺杂区;
其中,所述第一金属、所述第二金属和所述第三金属均位于所述沟道区的上方。
根据本发明一优选实施例,所述过孔贯穿所述第一缓冲层和所述第二缓冲层;
第二金属被所述过孔分开,且所述第二金属与所述过孔相离。
根据本发明一优选实施例,所述源漏极金属层包括相互绝缘的源漏极金属和第三金属;
其中,所述源漏机金属与所述薄膜晶体管的多晶硅层相连。
根据本发明的另一个方面,提供了一种阵列基板,包括:
衬底基板;
设置在所述衬底基板之上的第一金属;
设置在所述第一金属之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属;
设置在所述第二金属之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属,所述第三金属位于所述阵列基板的阳极层;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属通过所述过孔与所述第三金属电连接,所述第一金属、所述第二金属和所述第三金属组成并联电容。
根据本发明一优选实施例,所述第一金属为栅极金属,所述第二金属位于源漏极金属层。
根据本发明一优选实施例,所述衬底基板与所述第一金属之间设置有多晶硅层,所述多晶硅层包括中部的沟道区和两端的掺杂区;
其中,所述第一金属、所述第二金属和所述第三金属均位于所述沟道区的上方。
根据本发明一优选实施例,所述过孔贯穿所述第一缓冲层和所述第二缓冲层;
第二金属被所述过孔分开,且所述第二金属与所述过孔相离。
根据本发明一优选实施例,所述阳极层包括相互绝缘的阳极金属和第三金属;
其中,所述阳极金属与源漏极金属相连。
本发明的优点是,提供了一种阵列基板,通过将栅极金属与电容金属或源漏极金属相连,使栅极金属、源漏极金属和电容金属之间的电容并联,进而在保持单个像素面积不变的前提下增加补偿电路的电容,以实现显示面板的高清晰度。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术中阵列基板的结构示意图;
图2为本发明一实施例中阵列基板的结构示意图;
图3为本发明另一实施例中阵列基板的结构示意图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
本发明提供了一种阵列基板,阵列基板的高像素值设置与补偿电路中的存储电容增大需求不能同时满足的问题,本实施例能够改善该缺陷。
图2为本发明一实施例中阵列基板的结构示意图;图3为本发明另一实施例中阵列基板的结构示意图。
下面结合附图和具体实施例对本发明做进一步的说明:
如图2所示,本发明提供了一种阵列基板,包括:
衬底基板21;
设置在所述衬底基板21之上的第一金属22;
设置在所述第一金属22之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属23;
设置在所述第二金属23之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属26b;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属22通过所述过孔与所述第三金属26a电连接,所述第一金属22、所述第二金属23和所述第三金属26b组成并联电容。
通常的,所述衬底基板21包括基底和缓冲层,所述基底既可以为刚性基底也可以为柔性基底,可根据阵列基板的类型和实际需求进行判断。
阵列基板中包括薄膜晶体管,所述薄膜晶体管通常包括多晶硅层24、栅极、栅绝缘层、源漏极和绝缘层。
进一步的,所述栅极金属和所述电容金属之间形成电容。
在本发明中,所述第一金属22为栅极,所述第二金属23即为电容金属,所述第三金属26b位于源漏极金属层,即所述第三金属26b与所述源漏极26a可以在同一制程中制备。
具体的,为了实现第一金属22、第二金属23和第三金属26b形成并联电容,我们需要设置第一金属22和第三金属26b具有相同的电压,所述第一金属22和第三金属26b通过过孔25进行电连接;
其中,所述过孔25贯穿所述第一缓冲层和第二缓冲层,同时为了避免过孔对第二金属23的干扰,第二金属23被所述过孔25分开,且所述第二金属23与所述过孔25相离,所述第二金属23的图案可以在源漏极金属的制备过程中一道制备,不需要额外的工艺。
本发明通过第一金属22、第二金属23和第三金属26b的并联设置,可以在不增大电容所占像素面积的同时所在像素的电容值,提高像素显示的性能;换一个角度说,就是能够在缩小像素面积的同时保持电容的电容值不变,进而使显示面板高清化。
所述衬底基板21与所述第一金属22之间设置有多晶硅层24,所述多晶硅层24包括中部的沟道区和两端的掺杂区;
其中,所述第一金属22、所述第二金属23和所述第三金属26b均位于所述沟道区的上方。
优选的,源漏极金属层包括相互绝缘的源漏极金属26a和第三金属26b;
其中,所述源漏机金属26a与所述薄膜晶体管的多晶硅层24相连。
如图3所示,根据本发明的另一方面,还提供了一种阵列基板,包括:
衬底基板31;
设置在所述衬底基板31之上的第一金属32;
设置在所述第一金属32之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属34b;
设置在所述第二金属34b之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属35b,所述第三金属34b位于所述阵列基板的阳极层;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属32通过所述过孔与所述第三金属35b电连接,所述第一金属32、所述第二金属34b和所述第三金属35b组成并联电容。
其中,所述第一金属32为栅极金属,所述第二金属34b位于源漏极金属层。
优选的,所述衬底基板31与所述第一金属32之间设置有多晶硅层33,所述多晶硅层33包括中部的沟道区和两端的掺杂区;
其中,所述第一金属32、所述第二金属34b和所述第三金属35b均位于所述沟道区的上方。
优选的,所述过孔贯穿所述第一缓冲层和所述第二缓冲层;
第二金属34b被所述过孔分开,且所述第二金属34b与所述过孔相离。
进一步的,所述阳极层包括相互绝缘的阳极金属35a和第三金属35b,因此,所述第三金属35b和所述阳极金属35a可以在同一道光罩中制备;
其中,所述阳极金属35a与源漏极金属34a相连。
可以理解的是,所述阵列基板为有机发光阵列基板。
相较于上述实施例中采用阵列基板中的源漏极同层金属、栅极和电容金属形成并联电容,本发明中采用源漏极同层金属、栅极和阳极同层金属形成并联电容,两种实施例的结构不同,均能达到增大像素电容值的作用,采用哪一种实施例具体可根据实际情况进行判断。
本发明的优点是,提供了一种阵列基板,通过将栅极金属与电容金属或源漏极金属相连,使栅极金属、源漏极金属和电容金属之间的电容并联,进而在保持单个像素面积不变的前提下增加补偿电路的电容,以实现显示面板的高清晰度。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种阵列基板,其特征在于,包括:
衬底基板;
设置在所述衬底基板之上的第一金属;
设置在所述第一金属之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属;
设置在所述第二金属之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属通过所述过孔与所述第三金属电连接,所述第一金属、所述第二金属和所述第三金属组成并联电容。
2.根据权利要求1所述的阵列基板,其特征在于,所述第一金属为栅极金属,所述第三金属位于所述阵列基板的源漏极金属层。
3.根据权利要求2所述的阵列基板,其特征在于,所述衬底基板与所述第一金属之间设置有多晶硅层,所述多晶硅层包括中部的沟道区和两端的掺杂区;
其中,所述第一金属、所述第二金属和所述第三金属均位于所述沟道区的上方。
4.根据权利要求3所述的阵列基板,其特征在于,所述过孔贯穿所述第一缓冲层和所述第二缓冲层;
所述过孔将所述第二金属分开,且所述第二金属与所述过孔相离。
5.根据权利要求4所述的阵列基板,其特征在于,所述源漏极金属层包括相互绝缘的源漏极金属和所述第三金属;
其中,所述源漏机金属与所述薄膜晶体管的多晶硅层相连。
6.一种阵列基板,其特征在于,包括:
衬底基板;
设置在所述衬底基板之上的第一金属;
设置在所述第一金属之上的第一缓冲层;
设置在所述第一缓冲层之上的第二金属;
设置在所述第二金属之上的第二缓冲层;
设置在所述第二缓冲层之上的第三金属,所述第三金属位于所述阵列基板的阳极层;
其中,所述第一缓冲层与所述第二缓冲层之间设置有过孔,所述第一金属通过所述过孔与所述第三金属电连接,所述第一金属、所述第二金属和所述第三金属组成并联电容。
7.根据权利要求6所述的阵列基板,其特征在于,所述第一金属为栅极金属,所述第二金属位于源漏极金属层。
8.根据权利要求7所述的阵列基板,其特征在于,所述衬底基板与所述第一金属之间设置有多晶硅层,所述多晶硅层包括中部的沟道区和两端的掺杂区;
其中,所述第一金属、所述第二金属和所述第三金属均位于所述沟道区的上方。
9.根据权利要求8所述的阵列基板,其特征在于,所述过孔贯穿所述第一缓冲层和所述第二缓冲层;
所述过孔将所述第二金属分开,且所述第二金属与所述过孔相离。
10.根据权利要求9所述的阵列基板,其特征在于,所述阳极层包括相互绝缘的阳极金属和所述第三金属;
其中,所述阳极金属与源漏极金属相连。
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CN110265412A (zh) * | 2019-06-27 | 2019-09-20 | 京东方科技集团股份有限公司 | 阵列基板、显示面板和阵列基板的制造方法 |
CN111724736A (zh) * | 2020-07-24 | 2020-09-29 | 京东方科技集团股份有限公司 | 一种阵列基板、oled显示面板及显示装置 |
WO2021027277A1 (zh) * | 2019-08-12 | 2021-02-18 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
CN112951854A (zh) * | 2021-04-27 | 2021-06-11 | 昆山国显光电有限公司 | 阵列基板、显示面板及显示装置 |
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