CN109148477A - Tft阵列基板及显示面板 - Google Patents

Tft阵列基板及显示面板 Download PDF

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CN109148477A
CN109148477A CN201810805877.6A CN201810805877A CN109148477A CN 109148477 A CN109148477 A CN 109148477A CN 201810805877 A CN201810805877 A CN 201810805877A CN 109148477 A CN109148477 A CN 109148477A
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metal layer
layer
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array substrate
tft array
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CN109148477B (zh
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方俊雄
吴元均
吕伯彦
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2018/107776 priority patent/WO2020015177A1/zh
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Abstract

本发明涉及一种TFT阵列基板及显示面板。该TFT阵列基板包括图案化的金属氧化物主动层、栅极金属层，以及源漏极金属层，进一步包括至少一图案化的吸氢金属层，所述吸氢金属层与图案化的金属氧化物主动层之间设有介电层。本发明的TFT阵列基板及显示面板，能够减少氢原子与金属氧化物TFT主动层的反应，达到改善TFT信赖性的目的。

Description

TFT阵列基板及显示面板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板及显示面板。
背景技术
金属氧化物薄膜晶体管(Metal oxide TFT)(例如IGZO；IGTO…)具有较简略的制造工序,高的载子迁移率、低漏电流以及较佳的电性稳定性,因此被应用于有机发光二极管(OLED)显示器的驱动电路,金属氧化物TFT的缺点是金属氧化物中的氧原子容易被氢原子还原,产生氧空缺,导致TFT的电特性飘移,既有的作法为了减少氢原子的来源,金属氧化物TFT的介电层材料采用SiOx取代SiNx(例如缓冲层(Buffer layer)，层间绝缘层(ILD)，钝化层(PV)等膜层)，但是依据不同的化学气相沉积(CVD)成膜条件,SiOx薄膜中仍然含有一至十几原子百分比(at％)的氢含量,这些氢原子在后续的高温工艺,或是显示器操作时电流产生的局部高温,都有机会由SiOx薄膜中扩散到金属氧化物TFT的沟道中,使TFT的电特性偏移而造成画面显示异常的现象。
参见图1，其为一种现有有机发光显示面板剖面结构示意图，主要包括：包含金属氧化物TFT的TFT阵列基板、以及设置于TFT阵列基板上的OLED器件。TFT阵列基板主要包括：基板1，设于基板1上的缓冲层2，设于缓冲层2上的主动层3，设于缓冲层2及主动层3上的栅极绝缘层4，设于栅极绝缘层4上的栅极金属层5，设于缓冲层2、主动层3以及栅极金属层5上的层间绝缘层6，设于层间绝缘层6上的源漏极金属层7，设于源漏极金属层7上的钝化层8，以及设于钝化层8上的平坦层9；通过图案化的主动层3，栅极金属层5以及源漏极金属层7等结构，形成了开关TFT，驱动TFT以及存储电容等器件，可以用于组成驱动像素的TFT驱动电路，组成TFT驱动电路的TFT器件可以为金属氧化物TFT，相应的主动层3为金属氧化物主动层。缓冲层2，层间绝缘层6和钝化层8采用SiOx制备，如图1虚线箭头所示，缓冲层2，层间绝缘层6和钝化层8所含有的氢原子有机会扩散至主动层3所形成的沟道中，使TFT的电特性偏移。
OLED器件制备于TFT阵列基板的平坦层9上，平坦层9设有过孔用于连接TFT阵列基板中的TFT器件。OLED器件主要包括：设于平坦层9上的阳极10，设于平坦层9及阳极10上的像素定义层20，设于阳极10及像素定义层20上的有机功能层21，设于有机功能层21上的阴极22；当适当的电压施加于阳极10与阴极22时，有机功能层21发光。
发明内容
因此，本发明的目的在于提供一种TFT阵列基板及显示面板，减少氢原子与金属氧化物TFT主动层的反应。
为实现上述目的，本发明提供了一种TFT阵列基板，包括图案化的金属氧化物主动层、栅极金属层、以及源漏极金属层，进一步包括至少一图案化的吸氢金属层，所述吸氢金属层与图案化的金属氧化物主动层之间设有介电层。
其中，所述吸氢金属为钛金属或镍合金金属。
其中，包括图案化的第一吸氢金属层，第一吸氢金属层与图案化的主动层上下相对设置。
其中，还包括设于第一吸氢金属层与图案化的主动层之间作为介电层的缓冲层。
其中，所述图案化的第一吸氢金属层面积等于或略大于图案化的主动层。
其中，包括图案化的第二吸氢金属层，第二吸氢金属层设于图案化的栅极金属层底部。
其中，还包括设于第二吸氢金属与图案化的主动层之间作为介电层的栅极绝缘层。
其中，所述图案化的第二吸氢金属层面积等于或略大于图案化的栅极金属层。
其中，包括图案化的第三吸氢金属层，第三吸氢金属层设于图案化的源漏极金属层底部。
其中，还包括设于第三吸氢金属层与图案化的主动层之间作为介电层的层间绝缘层。
其中，所述图案化的第三吸氢金属层面积等于或略大于图案化的源漏极金属层。
本发明还提供了一种显示面板，包括上述任一项所述的TFT阵列基板。
综上，本发明的TFT阵列基板及显示面板，能够减少氢原子与金属氧化物TFT主动层的反应，达到改善TFT信赖性的目的。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为一种现有有机发光显示面板剖面结构示意图；
图2为包含本发明TFT阵列基板实施例1的显示面板的剖面结构示意图；
图3为包含本发明TFT阵列基板实施例2的显示面板的剖面结构示意图；
图4为包含本发明TFT阵列基板实施例3的显示面板的剖面结构示意图；
图5为包含本发明TFT阵列基板实施例4的显示面板的剖面结构示意图。
具体实施方式
类似于一般的TFT阵列基板，本发明的TFT阵列基板主要包括图案化的金属氧化物主动层、栅极金属层、以及源漏极金属层，通过金属氧化物主动层、栅极金属层、以及源漏极金属层可形成金属氧化物TFT器件；本发明进一步包括了至少一图案化的吸氢金属层，通过吸氢金属层减少氢原子与金属氧化物TFT主动层的反应,达到改善TFT信赖性的目的，并且吸氢金属层与图案化的金属氧化物主动层之间设有介电层，可分隔金属氧化物主动层和吸氢金属层。吸氢金属可以为钛金属或镍合金金属，或者其他适合的材料。
参见图2，其为包含本发明TFT阵列基板实施例1的显示面板的剖面结构示意图，该显示面板主要包括本发明TFT阵列基板实施例1及OLED器件。此较佳实施例中，TFT阵列基板主要包括：基板1，设于基板1上的缓冲层2，设于缓冲层2上的金属氧化物主动层3，设于缓冲层2及主动层3上的栅极绝缘层4，设于栅极绝缘层4上的栅极金属层5，设于缓冲层2、主动层3以及栅极金属层5上的层间绝缘层6，设于层间绝缘层6上的源漏极金属层7，设于源漏极金属层7上的钝化层8，以及设于钝化层8上的平坦层9；主动层3中部形成沟道，主动层3两端分别连接TFT的源极和漏极；通过图案化的主动层3，栅极金属层5以及源漏极金属层7等结构，可以形成开关TFT，驱动TFT以及存储电容等器件，可以用于组成驱动像素的TFT驱动电路，通过金属氧化物主动层3可形成金属氧化物TFT器件。其中，缓冲层2，层间绝缘层6和钝化层8采用SiOx制备。
在此较佳实施例中，OLED器件制备于TFT阵列基板的平坦层9上，平坦层9设有过孔用于连接TFT阵列基板中的TFT器件。OLED器件主要包括：设于平坦层9上的第一电极，此实施例中为阳极10，设于平坦层9及阳极10上的像素定义层20，设于阳极10及像素定义层20上的有机功能层21，设于有机功能层21上的第二电极，此实施例中为阴极22；当适当的电压施加于阳极10与阴极22时，有机功能层21发光。
本发明TFT阵列基板实施例1进一步包括图案化的第一吸氢金属层11，第一吸氢金属层11与图案化的主动层3上下相对设置。第一吸氢金属层11与图案化的主动层3之间的缓冲层2可以作为介电层。图案化的第一吸氢金属层11面积可以等于或略大于图案化的主动层3。
钛金属是一种吸氢材料,辅以适当的温度条件下可以提高钛金属内的氢原子固含量。本实施例是在TFT阵列基板的玻璃基板1上制作一层钛金属层作为第一吸氢金属层11,并用黄光蚀刻工艺在相对于金属氧化物TFT主动层3下方形成钛金属区域,钛金属面积略大于金属氧化物TFT主动层3的面积。后续的TFT工艺中有许多的高温退火工序,如图2虚线箭头所示，此时缓冲层2、层间绝缘层6以及钝化层8的SiOx膜层中的氢原子会被释放出来,并且四处扩散,当氢原子扩散到钛金属内会以杂掺(interstitial atom)型态停留在钛金属晶格中,或是与钛金属形成氢化钛(TiHx；x＝1.5～1.99),当氢原子进入钛金属后必须使用更高的活化能才能使氢原子脱离钛金属,因此可以有效的将SiOx膜层释放出来的氢原子局限在钛金属层中,减少氢原子与金属氧化物TFT主动层3的反应,达到改善TFT信赖性的目的。
参见图3，其为包含本发明TFT阵列基板实施例2的显示面板的剖面结构示意图，该显示面板主要包括本发明TFT阵列基板实施例2及OLED器件。省略与实施例1中相同部分的说明，本发明TFT阵列基板实施例2进一步包括图案化的第二吸氢金属层12，第二吸氢金属层12设于图案化的栅极金属层5底部。第二吸氢金属12与图案化的主动层3之间介电层主要包括设于两者之间的栅极绝缘层4。图案化的第二吸氢金属层12面积可以等于或略大于图案化的栅极金属层5。
本实施例是在栅极金属层5底部制作一层钛金属层作为第二吸氢金属层12,栅极金属可以是Cu、Al以及其他低电阻金属或是合金材料,并用同一道黄光蚀刻工艺形成栅极金属图案(包含钛金属),也可以将钛金属视为是栅极金属的材料之一。后续的TFT工艺中有许多的高温退火工序,如图3虚线箭头所示，此时缓冲层2、层间绝缘层6以及钝化层8的SiOx膜层中的氢原子会被释放出来，并且四处扩散,当氢原子扩散到钛金属内会以杂掺(interstitial atom)型态停留在钛金属晶格中,或是与钛金属形成氢化钛(TiHx；x＝1.5～1.99),当氢原子进入钛金属后必须使用更高的活化能才能使氢原子脱离钛金属,因此可以有效的将SiOx膜层释放出来的氢原子局限在钛金属层中,减少氢原子与金属氧化物TFT主动层3的反应，达到改善TFT信赖性的目的。
参见图4，其为包含本发明TFT阵列基板实施例3的显示面板的剖面结构示意图，该显示面板主要包括本发明TFT阵列基板实施例3及OLED器件。省略与实施例1中相同部分的说明，本发明TFT阵列基板实施例3进一步包括图案化的第三吸氢金属层13，第三吸氢金属层13设于图案化的源漏极金属层7底部。设于第三吸氢金属层13与图案化的主动层3两者之间的层间绝缘层6可作为两者之间的介电层。图案化的第三吸氢金属层13面积可以等于或略大于图案化的源漏极金属层7。
本实施例是在源漏极金属层7底部制作一层钛金属层作为第三吸氢金属层13,源漏极金属可以是Cu、Al以及其他低电阻金属或是合金材料,并用黄光蚀刻工艺形成源漏极金属层7图案,也可以将钛金属视为是源漏极金属层7的材料之一。后续的TFT工艺中有许多的高温退火工序,如图4虚线箭头所示，此时缓冲层2、层间绝缘层6以及钝化层8的SiOx膜层中的氢原子会被释放出来,并且四处扩散,当氢原子扩散到钛金属内会以杂掺(interstitial atom)型态停留在钛金属晶格中,或是与钛金属形成氢化钛(TiHx；x＝1.5～1.99),当氢原子进入钛金属后必须使用更高的活化能才能使氢原子脱离钛金属,因此可以有效的将SiOx膜层释放出来的氢原子局限在钛金属层中,减少氢原子与金属氧化物TFT主动层3的反应,达到改善TFT信赖性的目的。
本发明TFT阵列基板实施例1至3可以任意组合使用。参见图5，其为包含本发明TFT阵列基板实施例4的显示面板的剖面结构示意图，该显示面板主要包括本发明TFT阵列基板实施例4及OLED器件。参照前述实施例1至3中相同部分的说明，本发明TFT阵列基板实施例4结合实施例1至3,在玻璃基板1上,在栅极金属层5底部以及在源漏极金属层7底部分别制作一层钛金属层,并用黄光蚀刻工艺形成相对应的金属图案，形成第一吸氢金属层11，第二吸氢金属层12以及第三吸氢金属层13。TFT工艺中有许多的高温退火工序,如图5虚线箭头所示，此时缓冲层2、层间绝缘层6以及钝化层8的SiOx膜层中的氢原子会被释放出来,并且四处扩散,当氢原子扩散到钛金属内会以杂掺(interstitial atom)型态停留在钛金属晶格中,或是与钛金属形成氢化钛(TiHx；x＝1.5～1.99),当氢原子进入钛金属后必须使用更高的活化能才能使氢原子脱离钛金属,因此可以有效的将SiOx膜层释放出来的氢原子局限在钛金属层中,减少氢原子与金属氧化物TFT主动层的反应,达到改善TFT信赖性的目的。
相应的，本发明还提供了包含上述TFT阵列基板实施例的显示面板。
综上，本发明的TFT阵列基板及显示面板能够减少氢原子扩散到金属氧化物TFT的主动层内，减少氢原子与金属氧化物TFT主动层的反应，达到改善TFT信赖性的目的。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT阵列基板，包括图案化的金属氧化物主动层、栅极金属层、以及源漏极金属层，其特征在于，进一步包括至少一图案化的吸氢金属层，所述吸氢金属层与图案化的金属氧化物主动层之间设有介电层。
2.如权利要求1所述的TFT阵列基板，其特征在于，所述吸氢金属为钛金属或镍合金金属。
3.如权利要求1所述的TFT阵列基板，其特征在于，包括图案化的第一吸氢金属层，第一吸氢金属层与图案化的主动层上下相对设置。
4.如权利要求3所述的TFT阵列基板，其特征在于，还包括设于第一吸氢金属层与图案化的主动层之间作为介电层的缓冲层。
5.如权利要求3所述的TFT阵列基板，其特征在于，所述图案化的第一吸氢金属层面积等于或略大于图案化的主动层。
6.如权利要求1所述的TFT阵列基板，其特征在于，包括图案化的第二吸氢金属层，第二吸氢金属层设于图案化的栅极金属层底部。
7.如权利要求6所述的TFT阵列基板，其特征在于，还包括设于第二吸氢金属与图案化的主动层之间作为介电层的栅极绝缘层。
8.如权利要求1所述的TFT阵列基板，其特征在于，包括图案化的第三吸氢金属层，第三吸氢金属层设于图案化的源漏极金属层底部。
9.如权利要求8所述的TFT阵列基板，其特征在于，还包括设于第三吸氢金属层与图案化的主动层之间作为介电层的层间绝缘层。
10.一种显示面板，其特征在于，包括如权利要求1～9任一项所述的TFT阵列基板。
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