CN109120286B - Radio frequency circuit for miniaturized ODU transmitting channel - Google Patents
Radio frequency circuit for miniaturized ODU transmitting channel Download PDFInfo
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- CN109120286B CN109120286B CN201811189746.6A CN201811189746A CN109120286B CN 109120286 B CN109120286 B CN 109120286B CN 201811189746 A CN201811189746 A CN 201811189746A CN 109120286 B CN109120286 B CN 109120286B
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- 230000005540 biological transmission Effects 0.000 claims description 21
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B1/0475—Circuits with means for limiting noise, interference or distortion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0491—Circuits with frequency synthesizers, frequency converters or modulators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a radio frequency circuit for a miniaturized ODU transmitting channel, which comprises a mixer, a radio frequency filter, a radio frequency amplifier and a cavity filter which are sequentially connected in series, wherein the mixer comprises an intermediate frequency input end for inputting an intermediate frequency signal, a local oscillation input end for inputting a local oscillation signal and a radio frequency output end for outputting a radio frequency signal after mixing, the radio frequency output end is electrically connected with the radio frequency filter for inhibiting clutter in the radio frequency signal, the rear stage of the radio frequency filter is electrically connected with the radio frequency amplifier for amplifying the radio frequency signal, and the cavity filter for carrying out-of-band inhibition on the radio frequency signal is electrically connected behind the radio frequency amplifier. The composition of the chip and interface network used in the above circuit is further disclosed. The circuit is applied to a satellite communication transmitting channel, can change the frequency of a radio frequency signal, and has the advantages of stability, reliability, power consumption saving, small volume, low cost and the like.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a radio frequency circuit suitable for a miniaturized ODU transmitting channel.
Background
In satellite communication devices, ODU (Out-door Unit) refers to an outdoor Unit, mainly comprising frequency conversion and power amplification, and may be specifically divided into a transmitting channel and a receiving channel, where the transmitting channel is usually referred to as BUC (Block Up-Converter), i.e. an Up-conversion radio frequency power amplifier, and the receiving channel is mainly referred to as LNB (Low Noise Block down-Converter), i.e. a low noise amplifying, frequency Converter.
In a transmitting channel, a radio frequency circuit is generally required to perform frequency conversion, filtering and amplification, and in a miniaturized application, the volume and the power consumption of the radio frequency circuit are low, and an output radio frequency signal can have good characteristics, for example, various indexes such as working bandwidth, output power, phase noise, spurious emission, frequency resolution and the like are required to meet design requirements.
Disclosure of Invention
The invention mainly solves the technical problems of large volume, complex circuit composition, multiple components and high power consumption in the prior art by providing a radio frequency circuit for a miniaturized ODU transmitting channel.
In order to solve the technical problems, the technical scheme adopted by the invention is to provide a radio frequency circuit for a miniaturized ODU transmitting channel, which comprises a mixer, wherein the mixer comprises an intermediate frequency input end for inputting an intermediate frequency signal, a local oscillator input end for inputting a local oscillator signal and a radio frequency output end for outputting a radio frequency signal after mixing, the radio frequency output end is electrically connected with a radio frequency filter for inhibiting cross modulation clutter in the radio frequency signal, the rear stage of the radio frequency filter is electrically connected with a radio frequency amplifier for amplifying the radio frequency signal, and the rear stage of the radio frequency amplifier is electrically connected with a cavity filter for carrying out-of-band inhibition on the radio frequency signal.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the radio frequency filter includes a first stage radio frequency filter and a second stage radio frequency filter.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the radio frequency amplifier includes a first stage radio frequency gain amplifier, a second stage radio frequency gain amplifier, and a radio frequency power amplifier, and after the radio frequency output end of the mixer is electrically connected to the first stage radio frequency filter, the first stage radio frequency gain amplifier, the second stage radio frequency filter, the second stage radio frequency gain amplifier, and the radio frequency power amplifier are sequentially connected.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, a matching attenuator is connected in series between the radio frequency output end of the mixer and the first stage radio frequency filter, between the first stage radio frequency filter and the first stage radio frequency gain amplifier, between the first stage radio frequency gain amplifier and the second stage radio frequency filter, and between the second stage radio frequency filter and the second stage radio frequency gain amplifier.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the first stage radio frequency filter and the second stage radio frequency filter are microstrip filters with the same structure.
In another embodiment of the radio frequency circuit for miniaturized ODU emission channels of the present invention, the microstrip filter includes U-shaped microwave strips, that is, a first microwave strip to a seventh microwave strip, which are disposed on a ceramic substrate, and are arranged in a laterally sequential manner with respect to the first microwave strip, and the opening directions of the first microwave strip are staggered and symmetrical in the center, wherein the opening directions of the first microwave strip are upward and are located at the symmetrical center, the second microwave strip and the third microwave strip are both opened downward, and are respectively located at the left side and the right side of the first microwave strip, the opening of the fourth microwave strip is upward and is located at the left side of the second microwave strip, the opening of the fifth microwave strip is upward and is located at the right side of the third microwave strip, the opening of the sixth microwave strip is downward and is located at the left side of the fourth microwave strip, the left branch of the sixth microwave strip is laterally extended to form a first port, the opening of the seventh microwave strip is downward and is located at the right side of the fifth microwave strip, and the right branch of the seventh microwave strip is laterally extended to form a second port.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the mixer includes a chip NC17104C-620, the frequency range of the intermediate frequency signal is 950MHz-1700MHz, the frequency of the local oscillator signal is 12.8GHz, the frequency range of the radio frequency signal is 13.75GHz-14.5GHz, and the intermediate frequency input end of the chip NC17104C-620 is also electrically connected with a matching attenuator to input the intermediate frequency signal, and the matching attenuators are all chips TGL4201.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the first stage radio frequency gain amplifier and the second stage radio frequency gain amplifier each comprise a chip CHA3666.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the radio frequency power amplifier comprises a chip TGA2533, and a power supply circuit for providing bipolar voltage supply to the chip TGA2533.
In another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention, the size of the cavity filter is 50mm×13.5mm×8.73mm, the bandpass is 13.75GHz-14.5GHz, the in-band loss is less than or equal to 0.5dB, and the in-band ripple is less than or equal to ±0.2dB.
The beneficial effects of the invention are as follows: the invention discloses a radio frequency circuit for a miniaturized ODU transmitting channel, which comprises a mixer, wherein the mixer comprises an intermediate frequency input end for inputting an intermediate frequency signal, a local oscillator input end for inputting a local oscillator signal and a radio frequency output end for outputting a radio frequency signal after mixing, the radio frequency output end is electrically connected with a radio frequency filter for inhibiting intermodulation clutter in the radio frequency signal, the rear stage of the radio frequency filter is electrically connected with a radio frequency amplifier for amplifying the radio frequency signal, and the rear stage of the radio frequency amplifier is electrically connected with a cavity filter for carrying out-of-band inhibition on the radio frequency signal. The composition of the chip and interface network used in the above circuit is further disclosed. The circuit is applied to a satellite communication transmitting channel, can change the frequency of a radio frequency signal, and has the advantages of stability, reliability, power consumption saving, small volume, low cost and the like.
Drawings
FIG. 1 is a schematic diagram of an RF circuit for miniaturized ODU transmission channels according to an embodiment of the invention;
FIG. 2 is a block diagram of an alternative embodiment of RF circuitry for miniaturized ODU transmit channels according to the present invention;
FIG. 3 is a schematic diagram of a microstrip filter in another embodiment of a radio frequency circuit for miniaturized ODU transmission channels according to the present invention;
FIG. 4 is a diagram of an RF circuit configuration in another embodiment of an RF circuit for a miniaturized ODU transmission channel according to the invention;
FIG. 5 is a circuit diagram of a mixer of another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the invention;
FIG. 6 is a circuit diagram of a gain amplifier of another embodiment of a radio frequency circuit for miniaturized ODU transmit channels according to the invention;
FIG. 7 is a circuit diagram of a radio frequency power amplifier of another embodiment of the radio frequency circuit for miniaturized ODU transmit channels of the invention;
FIG. 8 is a negative voltage circuit diagram of a radio frequency power amplifier of another embodiment of a radio frequency circuit for miniaturized ODU transmit channels of the invention;
fig. 9 is a 6V output protection circuit diagram of a radio frequency power amplifier according to another embodiment of the radio frequency circuit for miniaturized ODU transmission channels of the present invention.
Detailed Description
In order that the invention may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic diagram showing the composition of an rf circuit for miniaturized ODU transmission channels according to an embodiment of the present invention. As shown in fig. 1, the radio frequency circuit for the miniaturized ODU transmission channel includes a mixer 1, where the mixer 1 includes an intermediate frequency input end 11 for inputting an intermediate frequency signal, a local oscillation input end 12 for inputting a local oscillation signal, and a radio frequency output end 13 for outputting a radio frequency signal after mixing, the radio frequency output end 13 is electrically connected to a radio frequency filter 2 for suppressing intermodulation clutter in the radio frequency signal, a subsequent stage of the radio frequency filter 2 is electrically connected to a radio frequency amplifier 3 for amplifying the radio frequency signal, and a subsequent stage of the radio frequency amplifier 3 is also electrically connected to a cavity filter 4 for performing out-of-band suppression on the radio frequency signal.
Preferably, as shown in fig. 2, the rf filter includes a first stage rf filter 21 and a second stage rf filter 22. Preferably, the rf amplifier includes a first stage rf gain amplifier 31, a second stage rf gain amplifier 32, and an rf power amplifier 33.
After the rf output end of the mixer 1 is electrically connected to the first stage rf filter 21, the first stage rf gain amplifier 31, the second stage rf filter 22, the second stage rf gain amplifier 32 and the rf power amplifier 33 are sequentially connected.
Here, three stages of rf filtering are provided, where the first stage of rf filter 21 is disposed after the mixer 1, and functions to bandpass filter the rf signal obtained after mixing, suppress intermodulation products after mixing, and the second stage of rf filter 22 is disposed after the first rf gain amplifier 31, and mainly suppresses and filters clutter components caused by nonlinear distortion possibly generated by gain amplification, overcomes the change of frequency components caused by gain amplification, and suppresses the power increase of out-of-band signals caused by gain amplification synchronization. The purpose of the cavity filter 4 after the rf power amplifier 23 is to obtain a larger out-of-band rejection while minimizing the insertion loss. Preferably, the in-band insertion loss of the cavity filter is less than or equal to 0.5dB, and the first rf filter 21 and the second rf filter 22 are preferably microstrip filters, which each have an insertion loss of 6 dB.
Further, a matching attenuator 201 is connected in series between the rf output end of the mixer 1 and the first stage rf filter 21, a matching attenuator 202 is connected in series between the first stage rf filter 21 and the first stage rf gain amplifier 31, a matching attenuator 203 is connected in series between the first stage rf gain amplifier 31 and the second stage rf filter 22, and a matching attenuator 204 is connected in series between the second stage rf filter 22 and the second stage rf gain amplifier 32.
By arranging the matching attenuators, on one hand, the front and rear radio frequency devices can ensure mutual impedance matching in cascade connection, signal reverse backflow caused by impedance mismatch when radio frequency signals are transmitted in a channel is prevented, on the other hand, when the first-stage radio frequency gain amplifier and the second-stage radio frequency gain amplifier have limited requirements on the power of the input radio frequency signals, the power of the input radio frequency signals can be reduced through the attenuators, and because the gain amplifiers are saturated and generate nonlinear distortion when the power of the input signals is overlarge, the two-stage gain amplifiers are arranged, and the integrity of the signals can be ensured while the overall gain of the channel is met to meet design indexes. For example, if the overall gain of the two gain amplifiers is 40-50dB, if the gain of the first stage rf gain amplifier is too high to be 30dB, and the gain of the second stage rf gain amplifier is 20dB, the power of the rf signal output from the first stage rf gain amplifier may be relatively large, and when the rf signal is directly input to the second stage rf gain amplifier, the amplification saturation may be caused, so that the rf signal output from the second stage rf gain amplifier may be distorted. The power of the radio frequency signal input to the second-stage radio frequency gain amplifier can be reduced by adding the matched attenuator between the first-stage radio frequency gain amplifier and the second-stage radio frequency gain amplifier, so that the second-stage radio frequency gain amplifier can not work in a supersaturated state to distort the output radio frequency signal.
In addition, the radio frequency power amplifier 4 is arranged at a position relatively far back, on one hand, because the power of the radio frequency signal obtained by power amplification is larger, the current is increased, the power consumption is increased, the power output is also large, and the interference of the current power consumption on other circuits in the radio frequency can be avoided when the radio frequency power amplifier is arranged at the rear end, so that the electromagnetic compatibility of a radio frequency channel is enhanced. On the other hand, the method is also beneficial to directly outputting high-power radio frequency signals to the outside, avoiding the influence on a front-stage radio frequency circuit, and immediately generating mismatching of the external output, unreliable load connection and even no radio frequency load connection. Therefore, preferably, the radio frequency power amplifier further comprises a power supply protection circuit for protecting the power-on operation thereof.
The first-stage radio frequency filter and the second-stage radio frequency filter are microstrip filters with the same structure.
Further preferably, as shown in fig. 3, the microstrip filter 23 includes U-shaped microwave metal strips, i.e., first to seventh microwave metal strips 231 to 237, disposed on a ceramic substrate, and these microwave metal strips are arranged at intervals in a lateral direction with respect to the first microwave metal strip 231, and the opening directions of these microwave metal strips are staggered and are symmetrical with respect to the center. Wherein the first microwave metal band 231 is opened upwards and is positioned at the symmetry center, the second microwave metal band 232 and the third microwave metal band 233 are opened downwards and are respectively positioned at the left side and the right side of the first microwave metal band 231, the fourth microwave metal band 234 is opened upwards and is positioned at the left side of the second microwave metal band 232, the fifth microwave metal band 235 is opened upwards and is positioned at the right side of the third microwave metal band 233, the sixth microwave metal band 236 is opened downwards and is positioned at the left side of the fourth microwave metal band 234, the left branch of the sixth microwave metal band 236 is transversely extended to form a first port 238, the seventh microwave metal band 237 is opened downwards and is positioned at the right side of the fifth microwave metal band 235, and the right branch of the seventh microwave metal band 237 is transversely extended to form a second port 239.
Preferably, for the first microwave metal band 231, the width of the metal band is 0.22mm, the lengths of the left side branch and the right side branch are the same, and are 1.6mm, the length of the lower connecting branch is 1.23mm, and the intervals between the first microwave metal band 231 and the second microwave metal band 232 and the third microwave metal band 233 are 0.25mm. The distance between the second microwave metal strip 232 and the fourth microwave metal strip 234 is 0.22mm, the distance between the third microwave metal strip 233 and the fifth microwave metal strip 235 is 0.22mm, the distance between the fourth microwave metal strip 234 and the sixth microwave metal strip 236 is 0.1mm, and the distance between the fifth microwave metal strip 235 and the seventh microwave metal strip 237 is 0.1mm.
It is further preferred that the sixth and seventh microwave metal strips 236, 237 are further optimized in structure in order to achieve the filter characteristics of the filter. The length of the right branch of the sixth microwave metal strip 236 is 1.6mm, the width is 0.22mm, the length of the left branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned at the left side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned at the right side is 0.62mm, and the width is 0.22mm; the length of the first port 238 is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the first port 238 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The length of the left branch of the seventh microwave metal belt is 1.6mm, the width is 0.22mm, the length of the right branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned on the right side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned on the left side is 0.62mm, and the width is 0.22mm; the length of the second port is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the second port 239 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The structural design is designed based on the technical index to be achieved by the microstrip filter under the condition of small size, the band-pass filtering range of the microstrip filter is 13.55GHz-14.7GHz, the insertion loss of the passband is less than or equal to 6dB, the in-band ripple is less than or equal to 1dB, the VSWR is less than or equal to 1.3, and the out-of-band rejection is realized: 50dBc or more and 15.6GHz or more and 40dBc or more in the range of 10.95GHz-12.8 GHz.
In addition, the length of the whole radio frequency microstrip filter is only 11.87mm, the height is less than 2mm, the thickness of the microwave metal bands is 0.19mm, and the thickness of the microwave metal bands arranged on the ceramic substrate is 0.254mm. The microstrip filter has a small volume structure, and is suitable for miniaturized ODU emission channels.
Further, fig. 4 shows an actual circuit composition diagram of the rf circuit. Including mixer 1, first stage rf filter 21, first stage rf gain amplifier 31, second stage rf filter 22, second stage rf gain amplifier 32 and rf power amplifier 33, and cavity filter 4. It can also be seen that the mixer 1, the first stage rf filter 21 and the first stage rf gain amplifier 31 in fig. 4 are laterally distributed, and then the first stage rf gain amplifier 31 is electrically connected to the vertically arranged second stage rf gain amplifier 32 through the turning microstrip line W0, and a matching attenuator 203 is further provided between the turning microstrip line W0 and the second stage rf gain amplifier 32. In this way, the second stage rf filter 22, the second stage rf gain amplifier 32 and the rf power amplifier 33 are vertically distributed, and the second stage rf gain amplifier 32 and the rf power amplifier 33 are electrically connected through the first microstrip line W1, and the rf power amplifier 33 is electrically connected to the cavity filter 4 through the second microstrip line W2.
The spatial arrangement of the rf circuit shown in fig. 4 makes the entire rf circuit path exhibit an inverted-L configuration, which accommodates the miniaturization design requirements and maximizes the length of the rf circuit in a limited space. And furthermore, the metal walls are arranged on two sides of the radio frequency circuit channel, so that the radio frequency power amplifier is connected from the frequency mixer, and the radio frequency power amplifier comprises the second microstrip line W2 which is arranged in a continuous and independent metal cavity, so that the whole radio frequency circuit is shielded by the metal cavity and cannot be disturbed by external electromagnetic interference signals.
The following fig. 5 to 7 will explain in detail the enlarged views of the respective constituent parts in fig. 4.
As shown in fig. 5, the mixer includes a chip NC17104C-620, wherein the local oscillator input (LO side in the drawing) of the chip is electrically connected to the output 101 of the local oscillator filter through a gold band JD 1. The intermediate frequency input (shown as IF) is electrically connected to the output of the first matched attenuator chip TGL4201 through the wire JS1, and the input of the first matched attenuator chip TGL4201 is also connected to the output 102 of the intermediate frequency circuit through the wire JS 2. The RF output terminal (RF terminal shown) is electrically connected to the input terminal of the second matching attenuation chip TGL4201 through the gold band JD2, and the output terminal of the second matching attenuation chip TGL4201 is electrically connected to the first port 103 of the first stage RF filter (shown in fig. 3) through the gold band JD 3.
Preferably, the diameter of the gold wire is 25um, the width of the gold belt is 75um, and the gold wire and the gold belt are electrically connected in the radio frequency circuit, so that the conductivity of radio frequency signals can be improved, the transmission loss can be reduced, and the radio frequency characteristics of the radio frequency channel circuit can be guaranteed while the cost can be increased. And it can be seen that preferably, the two wires at two ends of the first matching attenuation chip TGL4201 are two, so that the radio frequency conduction characteristic can be ensured, and the cost can be reduced to the greatest extent. The diameter of the gold wire and the width of the gold ribbon in fig. 5 are equally applicable to the diameter of the gold wire and the width of the gold ribbon in fig. 6 and 7 below. Preferably, the frequency range of the intermediate frequency signal is 950MHz-1700MHz, the frequency of the local oscillator signal is 12.8GHz, and the frequency range of the radio frequency signal is 13.75GHz-14.5GHz.
Further, as shown in fig. 6, fig. 6 shows the first stage rf gain amplifier circuit composition. The circuit comprises a chip CHA3666, wherein the radio frequency input end (IN end IN the figure) of the chip is electrically connected with the output end of a third matched attenuation chip TGL4201 through a gold band JD4, and the input end of the third matched attenuation chip TGL4201 is connected with the second port 104 of the first-stage radio frequency filter through a gold band JD 5. The radio frequency output end (OUT end in the figure) of the chip is connected with the first port 105 of the turning microstrip line W0 through a gold band JD6, the input port P1 of the chip CHA3666 is grounded through a gold JS3, and the port P2 of the chip CHA3666 is grounded through a gold JS 4. The port D1 of the chip CHA3666 is electrically connected to the first capacitor DR1 through the golden wire JS5, the first capacitor DR1 is electrically connected to the third capacitor DR3 through two golden wires JS6, and correspondingly, the port D2 of the chip CHA3666 is electrically connected to the second capacitor DR2 through the golden wire JS7, and the second capacitor DR2 is electrically connected to the third capacitor DR3 through two golden wires JS 8. The third capacitor DR3 is electrically connected to the dc 4V power supply terminal 106 through two gold wires JS 9.
The second stage rf gain amplifier of fig. 4 has the same circuit composition as the circuit shown in fig. 6 and will not be described again here.
It can be seen that, in fig. 6, the chip CHA3666 is used as a core of the gain amplifier, and the chip includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole gain amplifier is smaller, and the gain amplifier is suitable for miniaturization. In addition, the chip and the capacitors are connected through the gold wire and the gold belt, and the capacitors are also connected through the gold wire and the gold belt, so that the radio frequency conductivity of the chip and the capacitors in electric connection can be enhanced, and the radio frequency characteristic of gain amplification is ensured.
Further, as shown in fig. 7, the rf power amplifier circuit composition is shown in fig. 7. The rf power amplifier includes a chip TGA2533, where an input end of the chip 1 is electrically connected to a second port 108 of the first microstrip line W1 in fig. 4 through a gold band JD7, a port No. 5 is electrically connected to a fourth capacitor DR4 through a gold wire JS10, JS11, and a fourth capacitor DR4, the fourth capacitor DR4 is electrically connected to a sixth capacitor DR6 through two gold JS12, a port No. 7 is electrically connected to a fifth capacitor DR5 through two gold JS13, the fifth capacitor DR5 is electrically connected to a first port 109 of the second microstrip line W2 in fig. 4 through a gold band JS14, a port No. 11 is electrically connected to a seventh capacitor DR7 through a gold band JS15, the seventh capacitor DR7 is electrically connected to an eighth capacitor DR8 through two gold JS16, the eighth capacitor DR8 is electrically connected to a direct current capacitor JS17 through a gold wire JS17, the eighth capacitor JS16 is electrically connected to a capacitor DR11 through a gold wire JS14, the ninth capacitor DR11 is electrically connected to a capacitor DR11 through a gold band JS14, the ninth capacitor 19 is electrically connected to a gold band JS11, the eighth capacitor is electrically connected to a gold band JS11 through a gold band JS11, the eighth capacitor is electrically connected to a first port 109 in fig. 4, the eighth capacitor is electrically connected to a gold band JS11 through a gold band JS11 is electrically connected to a first port 19, and the eighth capacitor is electrically connected to a ninth capacitor 19 through a nine capacitor 19 through a gold band JS 11.
It can be seen that the chip TGA2533 is used as a core of the rf power amplifier, and the chip includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole rf power amplifier is smaller, and the rf power amplifier is suitable for miniaturization. In addition, the chip TGA2533 is connected with the capacitors through the gold wires and the gold belts, and the capacitors are also connected through the gold wires and the gold wires, so that the radio frequency conductivity of the chip electrically connected with the capacitors can be enhanced, and the radio frequency characteristic of power amplification is ensured.
In combination with the above circuit composition, the chip CH3666 is selected as the gain amplifier, because the power of the obtained rf signal is about-20 dBm after passing through the mixer, the matching attenuator and the first stage rf microstrip filter, and the power of the rf signal reaching the cavity filter finally is about 25dBm, and here, the power amplification of the rf channel of 45dB is required. The gain value of the chip CH3666 is 20dB, the 1dB compression point (P1 dB) of the output power is 15dBm at minimum, so after CH3666 is used as a first-stage gain amplifier, the output is 0dBm for the radio frequency input signal of-20 dBm, which is far smaller than 15dBm corresponding to the 1dB compression point, and when the power of the radio frequency signal reaches the second-stage radio frequency gain amplifier chip CH3666 after the first-stage gain amplifier, which is about-10 dBm, wherein the second-stage radio frequency filter is a microstrip filter, has 6dB channel attenuation, and two matched attenuators are respectively provided with 3dB channel attenuation, so after the radio frequency signal passes through the second-stage radio frequency gain amplifier chip CH3666, the output radio frequency signal power is 10dBm, which is still smaller than 15 m corresponding to the 1dB compression point, and the integrity and the good dBm of the radio frequency signal are still ensured. However, if the first-stage gain amplification is used at this time, that is, the third-stage gain amplification is implemented by using the chip CH3666, since the input power is 10dBm, when the gain of 20dB is present, the output is 30dBm, which obviously exceeds 15dBm corresponding to the 1dB compression point, and signal distortion is obviously caused. Therefore, the rf power amplifier chip TGA2533 is selected, the 1dB compression point of the output power of the chip corresponds to 34dBm, the corresponding output power should not be greater than the value, and the amplification gain of the chip has a range of 24-28dB, so when the rf signal with 10dBm power is output by the second stage rf gain amplifier chip CH3666, the rf signal can be directly input to the rf power amplifier chip TGA2533 for power amplification, and the output rf signal power is 34-38dBm, wherein 34dBm is exactly 1dB compression point of the output power of the chip, so that the maximum output rf signal power can be satisfied, and good signal integrity can be maintained.
In addition, the two-stage radio frequency filters are microstrip filters with the same structure, the first radio frequency filter is used for carrying out band-pass filtering on radio frequency signals obtained after mixing and restraining intermodulation products after mixing, and the second radio frequency filter is arranged behind the first radio frequency gain amplifier and mainly used for carrying out restraining filtering on clutter components caused by nonlinear distortion possibly generated by gain amplification, overcoming the change of frequency components caused by gain amplification and restraining the power increase of out-of-band signals caused by gain amplification synchronization. The purpose of setting the cavity filter after the radio frequency power amplifier is to reduce the insertion loss as much as possible, so as to obtain larger out-of-band rejection. Preferably, the in-band insertion loss of the cavity filter is less than or equal to 0.5dB, which is obviously less than the insertion loss of 6dB of the microstrip filter, and the out-of-band rejection is as follows: the out-of-band rejection ratio was 50dB in the range of 10.95GHz-12.75GHz, and the out-of-band rejection ratio was 30dB at 14.7 GHz. Further preferably, the size of the cavity filter is 50mm multiplied by 13.5mm multiplied by 8.73mm, the band pass is 13.75GHz-14.5GHz, the in-band insertion loss is less than or equal to 0.5dB, and the in-band fluctuation is less than or equal to +/-0.2 dB.
Further, it can be seen in FIG. 7 that powering the chip TGA2533 includes two voltages of 6V and-0.55V, and that it is also desirable to power protect the two voltages from a single voltage acting on the TGA2533.
As shown in fig. 8, a negative voltage circuit is shown, which includes a chip LTC1983ES6-5 and a chip AD8615AUJZ, and the regulated 5V voltage is electrically connected to the power supply terminal of the chip LTC1983ES6-5 through series inductors L15 and L14. The power end is also electrically connected with the bypass capacitor C82 and grounded, and the voltage output end of the chip is connected with the chip AD8615AUJZ through a voltage division network. Specifically, the voltage output end of the chip LTC1983ES6-5 is connected in series with the resistor R35 and then connected to the 3 rd pin of the chip AD8615AUJZ, the pin is also electrically connected with the other resistor R36, the other end of the resistor R36 is grounded, and the voltage output end of the chip LTC1983ES6-5 is also directly electrically connected with the 2 nd pin of the chip AD8615AUJZ. The 1 st and 4 th pins of the chip AD8615AUJZ are electrically connected, and the 4 th pin is also connected with bypass capacitors C86 and C85, c85=0.1 uf, c86=1 nF as a voltage output pin. The 4 th pin output voltage is the negative polarity voltage output to the radio frequency power amplifier. The chip AD8615AUJZ outputs a negative polarity voltage, which is-0.55V.
Further, as shown in fig. 9, the 6V voltage output protection circuit comprises a triode MMBT3904 and a PMOS tube IRF7210PBF, the voltage stabilizing 5V is connected in series with a resistor R34 and then is electrically connected with the base electrode of the triode MMBT3904, the emitter electrode of the triode MMBT3904 is grounded, the collector electrode is connected in series with a first voltage dividing resistor R31 and a second voltage dividing resistor R30, the gate electrode of the PMOS tube IRF7210PBF is electrically connected between the first voltage dividing resistor R31 and the second voltage dividing resistor R30, the other end of the second voltage dividing resistor R30 is electrically connected with the source electrode of the PMOS tube IRF7210PBF, the voltage stabilizing 6V is also electrically connected with the source electrode of the PMOS tube IRF7210PBF, and the drain electrode of the PMOS tube IRF7210PBF is electrically connected with the positive electrode terminal of the power supply of the radio frequency power amplifier.
Preferably, the resistance values of the first voltage dividing resistor and the second voltage dividing resistor are 50kΩ. When the voltage stabilizing 5V is normal, the triode MMBT3904 is conducted, the voltage stabilizing 6V generates a pressure difference between the grid electrode G and the source electrode S of the PMOS tube IRF7210PBF through the first voltage dividing resistor R30 and the second voltage dividing resistor R31, so that the voltage stabilizing 6V is conducted to the drain electrode D, the voltage is further output to the radio frequency power amplifier, if the voltage stabilizing 5V is not added, the triode MMBT3904 is not conducted, the voltage dividing resistor 31 does not work, no pressure difference exists between the grid electrode G and the source electrode S, the PMOS tube IRF7210PBF is not conducted, and the drain electrode D cannot output the voltage stabilizing 6V.
In addition, the radio frequency power amplifier is TGA2533, and the chip needs two polarities of power supplies for supplying power, namely 6V and-0.55V.
It can be further seen that the negative voltage-0.55V of the bipolar power supply to the rf power amplifier chip TGA2533 is obtained by converting voltage of the stabilized voltage 5V through the chip LTC1983ES6-5 and the chip AD8615AUJZ and dividing the voltage, the negative voltage is not generated under the condition that no voltage of the stabilized voltage 5V is applied, and meanwhile, the stabilized voltage 6V for supplying power to the chip TGA2533 is not applied to the chip due to the action of the 6V voltage output protection circuit, thereby ensuring the synchronous protection characteristic of bipolar power supply to the rf power amplifier chip TGA2533.
Based on the above embodiment, the invention discloses a radio frequency circuit for a miniaturized ODU transmitting channel, which comprises a mixer, wherein the mixer comprises an intermediate frequency input end for inputting an intermediate frequency signal, a local oscillator input end for inputting a local oscillator signal, and a radio frequency output end for outputting a radio frequency signal after mixing, the radio frequency output end is electrically connected with a radio frequency filter for suppressing intermodulation clutter in the radio frequency signal, a rear stage of the radio frequency filter is electrically connected with a radio frequency amplifier for amplifying the radio frequency signal, and a rear stage of the radio frequency amplifier is electrically connected with a cavity filter for out-of-band suppression of the radio frequency signal. The composition of the chip and interface network used in the above circuit is further disclosed. The circuit is applied to a satellite communication transmitting channel, can change the frequency of a radio frequency signal, and has the advantages of stability, reliability, power consumption saving, small volume, low cost and the like.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the present invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
Claims (7)
1. The radio frequency circuit for the miniaturized ODU transmitting channel comprises a mixer, and is characterized in that the mixer comprises an intermediate frequency input end for inputting an intermediate frequency signal, a local oscillation input end for inputting a local oscillation signal and a radio frequency output end for outputting a radio frequency signal after mixing, wherein the radio frequency output end is electrically connected with a radio frequency filter for inhibiting intermodulation clutter in the radio frequency signal, the subsequent stage of the radio frequency filter is electrically connected with a radio frequency amplifier for amplifying the radio frequency signal, and the subsequent stage of the radio frequency amplifier is also electrically connected with a cavity filter for carrying out-of-band inhibition on the radio frequency signal; the radio frequency filter comprises a first-stage radio frequency filter and a second-stage radio frequency filter; the radio frequency amplifier comprises a first-stage radio frequency gain amplifier, a second-stage radio frequency gain amplifier and a radio frequency power amplifier, wherein the radio frequency output end of the mixer is electrically connected with the first-stage radio frequency filter and then sequentially connected with the first-stage radio frequency gain amplifier, the second-stage radio frequency filter, the second-stage radio frequency gain amplifier and the radio frequency power amplifier; the first-stage radio frequency filter and the second-stage radio frequency filter are microstrip filters with the same structure; the channel of the radio frequency circuit is in an inverse L-shaped structure, metal walls are arranged on two sides of the channel of the radio frequency circuit, and the channel from the mixer to the radio frequency power amplifier is arranged in a continuous and independent metal cavity.
2. The radio frequency circuit for a miniaturized ODU transmission channel of claim 1 wherein a matching attenuator is connected in series between the radio frequency output of the mixer and the first stage radio frequency filter, between the first stage radio frequency filter and the first stage radio frequency gain amplifier, between the first stage radio frequency gain amplifier and the second stage radio frequency filter, and between the second stage radio frequency filter and the second stage radio frequency gain amplifier.
3. The radio frequency circuit for miniaturized ODU emission channel of claim 1, wherein the microstrip filter comprises U-shaped microwave strips, namely, a first microwave strip to a seventh microwave strip, which are arranged on a ceramic substrate, and are arranged at intervals in a transverse direction with respect to the first microwave strip as a center, the openings of the first microwave strip being staggered in directions and being symmetrical in the center, wherein the openings of the second microwave strip and the third microwave strip are upward and are positioned at the center of symmetry, the openings of the second microwave strip and the third microwave strip are downward, respectively positioned at the left side and the right side of the first microwave strip, the openings of the fourth microwave strip are upward and positioned at the left side of the second microwave strip, the openings of the fifth microwave strip are upward and positioned at the right side of the third microwave strip, the openings of the sixth microwave strip are downward and positioned at the left side of the fourth microwave strip, the left branch of the sixth microwave strip is transversely extended to form a first port, the openings of the seventh microwave strip are downward and are positioned at the right side of the fifth microwave strip, and the right branch of the seventh microwave strip is transversely extended to form a second port.
4. A radio frequency circuit for miniaturized ODU transmission channels according to claim 3, characterized in that the mixer comprises a chip NC17104C-620, the frequency range of the intermediate frequency signal is 950MHz-1700MHz, the frequency of the local oscillator signal is 12.8GHz, the frequency range of the radio frequency signal is 13.75GHz-14.5GHz, the intermediate frequency input of the chip NC17104C-620 is also electrically connected to input the intermediate frequency signal, and the matching attenuators are all chips TGL4201.
5. The radio frequency circuit for miniaturized ODU transmission channels of claim 4 wherein the first stage radio frequency gain amplifier and the second stage radio frequency gain amplifier each comprise a chip CHA3666.
6. The radio frequency circuit for miniaturized ODU transmission channels of claim 5 wherein the radio frequency power amplifier comprises a chip TGA2533 and a power supply circuit that provides bipolar voltage supply to the chip TGA2533.
7. The radio frequency circuit for miniaturized ODU transmission channels of claim 6 wherein the cavity filter has dimensions of 50mm x 13.5mm x 8.73mm, a bandpass range of 13.75GHz-14.5GHz, an in-band insertion loss of 0.5dB or less, and an in-band ripple of 0.2dB or less.
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