CN115378368B - Ultra-wideband solid-state power amplifier - Google Patents
Ultra-wideband solid-state power amplifier Download PDFInfo
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- CN115378368B CN115378368B CN202211315435.6A CN202211315435A CN115378368B CN 115378368 B CN115378368 B CN 115378368B CN 202211315435 A CN202211315435 A CN 202211315435A CN 115378368 B CN115378368 B CN 115378368B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/12—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of attenuating means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses an ultra-wideband solid-state power amplifier, which comprises a signal input unit, an attenuator, a first amplifier, an equalizer, a first temperature-compensated attenuator, a second amplifier, a second temperature-compensated attenuator and a push amplifier which are sequentially connected; the output end of the push amplifier is connected with the input end of the first Lange bridge, the output end of the first Lange bridge is divided into two paths to the input end of the final-stage power amplifier, and the two paths of final-stage power amplifiers are synthesized and output to the signal output unit through the second Lange bridge; the first Lange bridge and the second Lange bridge have the same structure and comprise a substrate, wherein the substrate is provided with an input port, a coupling port, a through port, an isolation port, a plurality of finger-shaped microstrip lines connected among the ports and gold bonding wires connected among the finger-shaped microstrip lines. The invention overcomes the problem that the output power of the ultra-wideband power amplifier is small in the application process, and the output power of the 6 GHz-18 GHz power amplifier reaches more than 44dBm through synthesis.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to an ultra-wideband solid-state power amplifier.
Background
The ultra-wideband power amplifier is widely applied to communication, radar and test systems, the research on the domestic ultra-wideband power amplifier starts relatively late abroad, but with the improvement of the technical level, the demand of the fields of wireless communication, radar detection, electronic interference, electromagnetic compatibility and the like on the wideband power amplifier is continuously increased, and China also gradually pays attention to the research on the wideband power amplifier. The working bandwidth of the domestic existing low-frequency power amplifier is narrow, and the ultra-wideband power amplification is realized by generally adopting a mode of respectively covering multiple bands. However, the output power of the ultra-wideband power amplifier is generally small, and to obtain a large output power, power synthesis of the radio frequency power amplifier is required, and currently, common synthesis technologies mainly include plane structure synthesis and space synthesis, and the space synthesis technology has a larger size compared with a plane structure.
Disclosure of Invention
In view of the above problems, the present invention provides an ultra-wideband solid-state power amplifier, which combines the output power of the power amplifier to a value required by the system.
The invention adopts the following technical scheme:
an ultra-wideband solid-state power amplifier comprises a signal input unit, an attenuator with 3dB of insertion loss, a first amplifier with 9dB of gain, an equalizer with 1dB of insertion loss, a first temperature compensation attenuator with 3dB of insertion loss, a second amplifier with 17.5dB of gain, a second temperature compensation attenuator with 3dB of insertion loss, a push amplifier with 15dB of gain, a first Lange bridge with 3.5dB of insertion loss, a final power amplifier with 16dB of gain, a second Lange bridge with 3.5dB of insertion loss and a signal output unit with 0.5dB of insertion loss; the attenuator has the functions of preventing the damage of an overlarge input signal to the first-stage amplifier and improving the input standing wave of the ultra-wideband solid-state power amplifier; because the output power of the power amplifier changes obviously along with the change of the working temperature, a first temperature-compensated attenuator and a second temperature-compensated attenuator are added on the radio frequency circuit; an equalizer is added to the link to compensate for gain non-flatness within the operating band.
The signal input unit, the attenuator, the first amplifier, the equalizer, the first temperature compensation attenuator, the second amplifier, the second temperature compensation attenuator and the push amplifier are sequentially connected;
the output end of the push amplifier is connected with the input end of the first Lange bridge, the output end of the first Lange bridge is divided into two paths to the input end of the final-stage power amplifier, and the two paths of final-stage power amplifiers are synthesized and output to the signal output unit through the second Lange bridge.
The first Lange bridge and the second Lange bridge have the same structure and comprise a substrate, wherein the substrate is provided with an input port, a coupling port, a through port, an isolation port, a plurality of finger-shaped microstrip lines connected among the ports and a bonding gold wire connected among the finger-shaped microstrip lines, and the length L3 between the outer side of the isolation port and the outer side of the input port is 3.57mm; the width W1 between the outside of the input port and the outside of the coupling port is 1.32mm; the angle theta between the isolation port and the through port and between the input port and the coupling port is 90 degrees; the width W2 of the right-angle edge between the straight-through port and the input port is 0.62mm; the width W4 of the finger-shaped microstrip line is 0.03mm; the distance W3 between the adjacent finger-shaped microstrip lines is 0.02mm; the finger-shaped microstrip line comprises three long finger lines in the middle and short finger lines which are respectively arranged at the upper part and the lower part of two sides; a gap is arranged between the long finger line adjacent to the short finger line and the port, and the size L4 of the gap is 0.02mm; the length L2 of the long finger lines is 2.32mm; the length L1 of the short finger line is 1.16mm; the substrate thickness is 0.38mm.
Further, the substrate material of the first and second Lange bridges is selected to be 99.6% Al 2 O 3 The ceramic substrate respectively plays the functions of a splitter and a combiner, and simultaneously has the functions of electrical interconnection and mechanical support.
The invention has the beneficial effects that:
1. the invention overcomes the problem that the output power of the ultra-wideband power amplifier is small in the application process in the prior art, and the output power of the 6 GHz-18 GHz power amplifier reaches more than 44dBm through synthesis.
2. The invention uses the Lange bridge synthesis technology with small volume to replace the ridge waveguide space synthesis technology.
3. Under the continuous wave working condition, the low-end saturation power of the power amplifier is larger than 35W, the high-end saturation power of the power amplifier is larger than 30W, the power additional efficiency of the power amplifier is larger than 18%, and the power amplifier can be used for a unit module of a system with larger power and is well applied in projects.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below, and it is apparent that the drawings in the following description only relate to some embodiments of the present invention and are not limiting on the present invention.
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a Lange bridge configuration according to the present invention;
FIG. 3 is a graph showing scattering parameter curve simulation for a coupling port and an input port of a Lange bridge according to the present invention, wherein the ordinate represents insertion loss and the abscissa represents operating frequency;
fig. 4 is a graph showing scattering parameter curve simulation of the lange bridge through port and the isolation port of the present invention, wherein the ordinate represents insertion loss and the abscissa represents operating frequency.
In the figure:
1-a signal input unit; 2-an attenuator; 3-a first amplifier; 4-an equalizer; 5-a first temperature-compensated attenuator; 6-a second amplifier; 7-a second temperature-compensating attenuator; 8-a push amplifier; 9-a first lange bridge; 10-final stage power amplifier; 11-a second lange bridge; 12-signal output unit.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of the word "comprising" or "comprises", and the like, in this disclosure is intended to mean that the elements or items listed before that word, include the elements or items listed after that word, and their equivalents, without excluding other elements or items. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
The invention is further illustrated with reference to the following figures and examples.
As shown in fig. 1, an ultra-wideband solid state power amplifier includes: an ultra-wideband solid-state power amplifier comprises a signal input unit 1, an attenuator 2 with 3dB insertion loss, a first amplifier 3 with 9dB gain, an equalizer 4 with 1dB insertion loss, a first temperature compensation attenuator 5 with 3dB insertion loss, a second amplifier 6 with 17.5dB gain, a second temperature compensation attenuator 7 with 3dB insertion loss, a push amplifier 8 with 15dB gain, a first Lange bridge 9 with 3.5dB insertion loss, a final power amplifier 10 with 16dB gain, a second Lange bridge 11 with 3.5dB insertion loss and a signal output unit 12 with 0.5dB insertion loss;
the signal input unit 1 has the following types: SMA-KFD293; the attenuator 2 model is: TA0603N3R0; the model of the first amplifier 3 is HGC319; the equalizer 4 model is IEQ-06184; the model of the first temperature-compensation attenuator 5 is WTCA2003N9WB2; the model of the second amplifier 6 is IPA0618B; the model of the second temperature-compensation attenuator 7 is WTCA2003N9WB2; the push amplifier 8 is HGC419; the final-stage power amplifier 10 is in a WFDN060180-P43 model number; the type of the signal output unit 12 is SMA-KFD293.
As shown in fig. 2, the first lange bridge 9 and the second lange bridge 11 have the same structure, and include a substrate, where the substrate is provided with an input port, a coupling port, a through port, an isolation port, a plurality of finger-shaped microstrip lines connected between the ports, and a gold bonding wire connected between the finger-shaped microstrip lines, and a length L3 between an outer side of the isolation port and an outer side of the input port is 3.57mm; the width W1 between the outside of the input port and the outside of the coupling port is 1.32mm; the angle theta between the isolation port and the through port and between the input port and the coupling port is 90 degrees; the width W2 of the right-angle edge between the straight-through port and the input port is 0.62mm; the width W4 of the finger-shaped microstrip line is 0.03mm; the distance W3 between the adjacent finger-shaped microstrip lines is 0.02mm; the finger-shaped microstrip line comprises three long finger lines in the middle and short finger lines which are respectively arranged at the upper part and the lower part of two sides; a gap is arranged between the long finger line adjacent to the short finger line and the port, and the size L4 of the gap is 0.02mm; the length L2 of the long finger lines is 2.32mm; the length L1 of the short finger line is 1.16mm; the substrate thickness is 0.38mm.
FIG. 3 is a graph showing scattering parameter curves of a Lange bridge coupling port and an input port according to the present invention. And a curve m1 represents the insertion loss change of the coupling port when the Lange bridge works at frequencies of 6GHz to 18GHz, and when the working frequency is 12GHz, the insertion loss of the coupling port is-3.162 dB and contains 3dB of theoretical insertion loss. And a curve m4 represents the insertion loss change of the input port of the Lange bridge when the Lange bridge works at frequencies of 6GHz to 18GHz, and the insertion loss of the through port is-25.645 dB when the working frequency is 12 GHz.
FIG. 4 is a graph showing scattering parameter curves for a Lange bridge through port and an isolated port according to the present invention. And a curve m2 represents the insertion loss change of the through port when the Lange bridge works at frequencies of 6GHz to 18GHz, and when the working frequency is 12.30GHz, the insertion loss of the through port is-2.997 dB and contains 3dB of theoretical insertion loss. And a curve m3 represents the insertion loss change of the isolating port of the Lange bridge when the Lange bridge works at frequencies of 6GHz to 18GHz, and the insertion loss of the isolating port is-25.981 dB when the working frequency is 12 GHz.
Further, the substrate material of the first Lange bridge 9 and the second Lange bridge 11 is selected to be 99.6% Al 2 O 3 A ceramic substrate. The electrical characteristics of the first lange bridge 9 and the second lange bridge 11 are shown in fig. 3. When it is needed to be noted, the insertion loss of the first lange bridge 9 and the second lange bridge 11 is 3.5dB, the theoretical insertion loss is 3dB, the insertion loss of the actual processed lange bridge is 3.5-3=0.5dB, and is already relatively close to the actual insertion loss of the waveguide, which is 0.3dB.
The maximum signal of the microwave signal at the signal input unit 1 is: 0dBm, becomes-3 dBm after passing through the attenuator 2, outputs-3 +9= -6 dBm after passing through the first amplifier 3, and outputs as follows after passing through the equalizer 4 and the first temperature compensation attenuator 5: 6-1-3=2dbm, the output into the second amplifier 6 is: 2+17.5=19.5dbm, the second amplifier 6 increases the output of the second temperature-compensated attenuator 7 as: 19.5-3=16.5dbm, and the output of the reentry push amplifier 8 is: 16.5+15=31.5dbm, the output after passing through the first lange bridge 9 is: 31.5-3.5=28dbm, dividing the signal into two paths to the input end of the final power amplifier 10, and outputting by the final power amplifier 10: 28+16=44dbm, and one signal synthesized by the second lange bridge 11 is output as: 44+3-0.5=46.5dbm, and finally connected with the signal output unit 12 for output.
The index theoretical calculation is as follows: 0-3+9-1-3+17.5-3+15-3-0.5+16 +3-0.5= 46dBm.
Output power = +0+46= +46dBm.
Under the continuous wave working condition, the low-end saturation power of the power amplifier is larger than 35W, the high-end saturation power of the power amplifier is larger than 30W, the power added efficiency is larger than 18%, and the power amplifier can be used for a unit module of a system with larger power and is well applied in projects. The results of the performance tests are shown in the following table.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An ultra-wideband solid-state power amplifier is characterized by comprising a signal input unit (1), an attenuator (2), a first amplifier (3), an equalizer (4), a first temperature-compensated attenuator (5), a second amplifier (6), a second temperature-compensated attenuator (7), a push amplifier (8), a first Lange bridge (9), a final-stage power amplifier (10), a second Lange bridge (11) and a signal output unit (12); the signal input unit (1), the attenuator (2), the first amplifier (3), the equalizer (4), the first temperature compensation attenuator (5), the second amplifier (6), the second temperature compensation attenuator (7) and the push amplifier (8) are sequentially connected; the output end of the push amplifier (8) is connected with the input end of a first Lange bridge (9), the output end of the first Lange bridge (9) is divided into two paths to the input end of a final-stage power amplifier (10), and the two paths of final-stage power amplifiers (10) are synthesized and output to a signal output unit (12) through a second Lange bridge (11);
the first Lange bridge (9) and the second Lange bridge (11) are of the same structure and comprise a substrate, wherein the substrate is provided with an input port, a coupling port, a through port, an isolation port, a plurality of finger-shaped microstrip lines connected among the ports and a bonding gold wire connected among the finger-shaped microstrip lines, and the length L3 between the outer side of the isolation port and the outer side of the input port is 3.57mm; the width W1 between the outside of the input port and the outside of the coupling port is 1.32mm; the angle theta between the isolation port and the through port and between the input port and the coupling port is 90 degrees; the width W2 of the right-angle edge between the straight-through port and the input port is 0.62mm; the width W4 of the finger-shaped microstrip line is 0.03mm; the distance W3 between the adjacent finger-shaped microstrip lines is 0.02mm; the finger-shaped microstrip line comprises three long finger lines in the middle and short finger lines which are respectively arranged at the upper part and the lower part of two sides; a gap is arranged between the long finger line adjacent to the short finger line and the port, and the size L4 of the gap is 0.02mm; the length L2 of the long finger lines is 2.32mm; the length L1 of the short finger line is 1.16mm; the substrate thickness is 0.38mm.
2. The ultra-wideband solid state power amplifier according to claim 1, wherein the attenuator (2) insertion loss is 3dB.
3. The ultra-wideband solid-state power amplifier according to claim 1, characterized in that the first amplifier (3) gain is 9dB and the second amplifier (6) gain is 17.5dB.
4. An ultra-wideband solid state power amplifier according to claim 1, characterized in that the equalizer (4) insertion loss is 1dB.
5. The ultra-wideband solid state power amplifier according to claim 1, wherein the first and second temperature-compensated attenuators (5, 7) have an insertion loss of 3dB.
6. The ultra-wideband solid-state power amplifier according to claim 1, characterized in that the boost amplifier (8) has a gain of 15dB.
7. The ultra-wideband solid state power amplifier according to claim 1, wherein the first lange bridge (9) and the second lange bridge (11) have an insertion loss of 3.5dB.
8. The ultra-wideband solid-state power amplifier according to claim 1, wherein the gain of the final power amplifier (10) is 16dB.
9. The ultra-wideband solid state power amplifier according to claim 1, wherein the signal output unit (12) has an insertion loss of 0.5dB.
10. The ultra-wideband solid state power amplifier according to claim 1, wherein the substrate material of the first and second lange bridges (9, 11) is selected to be 99.6% al 2 O 3 A ceramic substrate.
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