CN113285679B - Ultra-wideband miniaturized amplitude expanding circuit - Google Patents
Ultra-wideband miniaturized amplitude expanding circuit Download PDFInfo
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- CN113285679B CN113285679B CN202110463140.2A CN202110463140A CN113285679B CN 113285679 B CN113285679 B CN 113285679B CN 202110463140 A CN202110463140 A CN 202110463140A CN 113285679 B CN113285679 B CN 113285679B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
Abstract
The invention discloses an ultra wide band miniaturized amplitude expanding circuit, belonging to the technical field of microwave, comprising: the broadband bridge circuit comprises a broadband bridge, an input transmission line and an output transmission line, wherein the input transmission line and the output transmission line are respectively connected with the input end and the isolation end of the broadband bridge through a blocking capacitor; the direct current bias circuit is connected between the input end and the isolation end of the broadband bridge; the direct end and the coupling end of the broadband bridge are respectively connected with the adjustable microwave impedance circuit, so that the purposes of improving the dynamic range of the radio frequency receiving channel and improving the output linear power of the radio frequency transmitting channel can be achieved.
Description
Technical Field
The invention belongs to the technical field of microwaves, and relates to an ultra-wideband transceiving radio frequency channel, in particular to an ultra-wideband miniaturized amplitude expanding circuit.
Background
Aiming at the application requirements of the system on the comprehensive front end, the radio frequency front end is required to simultaneously meet the functional requirements of electronic warfare, radar, communication and the like, and each receiving channel is required to have a high receiving dynamic range and higher linear output power for transmitting.
In the prior art, the current technology for improving the dynamic range of a microwave receiving channel mainly adopts active circuits such as a high-input P-1 amplifier and the like, cannot meet the requirement of high dynamic of a radio frequency front-end receiving channel, and does not adopt an amplitude expanding circuit to improve the dynamic range at present; at present, an analog linearizer is mainly adopted for improving the linear power output by a microwave transmitting channel, but the traditional analog linearizer mainly meets the requirements of narrow-band application, and the amplitude expansion range of the analog linearizer is smaller in broadband application.
Disclosure of Invention
In view of the above, the present invention provides an ultra-wideband miniaturized amplitude expanding circuit to achieve the purpose of improving the dynamic range of the rf receiving channel and improving the output linear power of the rf transmitting channel.
The technical scheme adopted by the invention is as follows: an ultra-wideband miniaturized amplitude-dilation circuit, the amplitude-dilation circuit comprising:
the broadband bridge circuit comprises a broadband bridge, an input transmission line and an output transmission line, wherein the input transmission line and the output transmission line are respectively connected with the input end and the isolation end of the broadband bridge through a blocking capacitor;
the direct current bias circuit is connected between the input end and the isolation end of the broadband bridge;
and the straight-through end and the coupling end of the broadband bridge are respectively connected with the adjustable microwave impedance circuit.
Further, the adjustable microwave impedance circuit comprises:
a diode;
the absorption resistor and the bypass capacitor are connected in series, the absorption resistor is connected with one end of the diode to form a first connection point, and the bypass capacitor is connected with the other end of the diode to form a second connection point;
the first connecting point is connected to the through end or the coupling end of the broadband bridge, and the second connecting point is connected to the grounding end.
Furthermore, the absorption resistor is a thin film resistor, and the resistance value of the absorption resistor is between 30 and 40 ohms.
Further, the dc bias circuit includes:
the other ends of the two choke inductors are connected and communicated, a circuit where the end is located is connected with a bias resistor and a decoupling capacitor, and the other ends of the bias resistor and the decoupling capacitor are respectively connected with a direct-current bias power supply and a grounding end.
Further, the bias resistor is set as a thin film resistor, and the current passing capacity of the bias resistor is more than 50 mA; the calculation formula of the resistance value R of the bias resistor is as follows:
R＝(Vc-Vj)/(2*I)
wherein Vc is a bias voltage, Vj is a forward conduction voltage of the diode, and I is a sum of forward conduction currents of the diodes in each adjustable microwave impedance circuit.
Furthermore, the current passing capacity of the choke inductor is larger than 50mA, and the choke inductor is a planar inductor or a coil inductor.
Further, the amplitude expansion circuit is integrated on a substrate material through an integration process, the substrate material is selected according to different integration processes, and if the micro-assembly process is adopted for integration, a ceramic substrate material is selected; if a microelectronic process is used, a semiconductor substrate material is selected.
Furthermore, the grounding end is provided with a grounding metal through hole, the grounding metal through hole is integrated on the substrate material, and the grounding metal through hole is connected with a grounding metal layer on the substrate material through a vertical metal through hole.
Further, the wideband bridge is set to a 90 degree 3dB bridge.
Furthermore, the blocking capacitor, the bypass capacitor and the decoupling capacitor are all flat capacitors.
The invention has the beneficial effects that:
1. by adopting the ultra-wideband miniaturized amplitude expanding circuit provided by the invention, under the mutual cooperation of the wideband bridge circuit, the direct current bias circuit and the adjustable microwave impedance circuit, the amplitude expansion can be realized, the gain compression characteristic of an amplifier is compensated, the dynamic range of a radio frequency receiving channel is improved, or the linear output power of a radio frequency transmitting channel is improved, and the technical difficulty of integrating the high dynamic of the radio frequency front end receiving channel and the high linear output power of the transmitting channel is solved.
2. By adopting the ultra-wideband miniaturized amplitude expanding circuit provided by the invention, the broadband bridge circuit, the direct current bias circuit and the adjustable microwave impedance circuit are integrated on the substrate material, so that the amplitude expanding circuit based on integrated application is realized.
Drawings
Fig. 1 is a schematic diagram of the overall circuit structure of the ultra-wideband miniaturized amplitude expanding circuit provided by the invention;
the figures are labeled as follows:
the circuit comprises an input transmission line-W1, a blocking capacitor-C0, an input end-P1, a choke inductor-L, a bias resistor-R0, a direct current bias power supply-Vd, a grounding metal through hole-Via, a decoupling capacitor-C2, an isolation end-P2, an output transmission line-W2, a through end-P3, a coupling end-P4, a diode-PIN, an absorption resistor-R1 and a bypass capacitor-C1.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar modules or modules having the same or similar functionality throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. On the contrary, the embodiments of the application include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.
In this embodiment, an ultra-wideband miniaturized amplitude-expanding circuit is specifically provided, and is mainly used for a radio frequency integrated front end, and is capable of improving a dynamic range of a radio frequency receiving channel and improving linear output power of a transmitting channel, and solving the technical difficulty of integrating high dynamic of the radio frequency front end receiving channel and high linear output power of the transmitting channel.
As shown in fig. 1, the amplitude expanding circuit includes: the wide-band bridge circuit, the direct current bias circuit and the adjustable microwave impedance circuit are formed, when in actual manufacture, the amplitude expanding circuit formed by the wide-band bridge circuit, the direct current bias circuit and the adjustable microwave impedance circuit is integrated on a substrate material (including components of each sub-circuit, interconnection metal wires and the like) through an integration process, the substrate material is mainly a carrier of the amplitude expanding circuit, the substrate material is selected according to different integration processes, and if a micro-assembly process (a radio frequency micro-assembly process) is adopted for integration, a ceramic substrate material is selected, and alumina ceramic or aluminum nitride ceramic material can be selected; if a microelectronic process (chip integration process) is used, a semiconductor substrate material is selected. Due to the adoption of an integrated design mode, the device can realize the amplitude expansion characteristic and has the advantages of ultra wide band, miniaturization, low cost and the like compared with the prior art.
Broadband bridge circuit
The broadband bridge circuit comprises a broadband bridge, an input transmission line W1 and an output transmission line W2, wherein the input transmission line W1 and the output transmission line W2 are respectively connected to an input end P1 and an isolation end P2 of the broadband bridge through a DC blocking capacitor C0, the input transmission line W1 and the output transmission line W2 externally play a role in interconnection and intercommunication with an external circuit, and meanwhile, the interconnection and the interconnection between internal circuit elements are internally realized. The broadband bridge is a 3dB bridge with 90 degrees, and is also called a lange bridge, and the design method can refer to related documents; the characteristic impedances of the input transmission line W1 and the output transmission line W2 are designed according to a characteristic impedance of 50 ohm, and the lengths of the characteristic impedances are determined by actual circuit layout; the dc blocking capacitor C0 mainly serves to isolate the dc bias voltage of the internal circuit from the outside, and plays a role of blocking direct current and direct current, in this embodiment, the dc blocking capacitor C0 is a flat capacitor, the capacitance value of which depends on the working frequency band, and the lower the frequency band, the larger the capacitance value.
② adjustable microwave impedance circuit
The straight-through end P3 and the coupling end P4 of the broadband bridge are respectively connected with an adjustable microwave impedance circuit I and an adjustable microwave impedance circuit II. In practical application, the adjustable microwave impedance circuit I and the adjustable microwave impedance circuit II both comprise: the diode PIN, the absorption resistor R1 and the bypass capacitor C1 are connected in parallel, two ends of a series circuit consisting of the absorption resistor R1 and the bypass capacitor C1 are connected to two ends of the diode PIN, the absorption resistor R1 is connected with the anode of the diode PIN, and the bypass capacitor C1 is connected with the cathode of the diode PIN.
The anode of the diode PIN in the adjustable microwave impedance circuit I is connected with a through end P3 of the broadband bridge, and the cathode of the diode PIN in the adjustable microwave impedance circuit I is connected with a grounding end; and the anode of the diode PIN in the adjustable microwave impedance circuit II is connected with the coupling end P4 of the broadband bridge, and the cathode of the diode PIN in the adjustable microwave impedance circuit II is connected with a grounding end, so that grounding is realized through the grounding end. In actual manufacturing, the diode PIN is selected according to different integration schemes, and if a ceramic substrate material is adopted, the diode PIN of a bare tube core type is selected; if a semiconductor substrate material is adopted, the diode PIN is directly designed on the semiconductor substrate and is integrated with the rest circuits.
The absorption resistor R1 is a microwave matching resistor, which together with the diode PIN performs the amplitude expansion function of the circuit. In practical application, the absorbing resistor R1 is a thin film resistor with a resistance value of 30-40 ohms and not exceeding 50 ohm, and the larger the resistance value of the absorbing resistor R1 is, the larger the initial insertion loss of the amplitude expanding circuit is, and the larger the amplitude expanding range is; the specific resistance value is adaptively designed according to the device parameters of the diode PIN, and the bearing power of the absorption resistor R1 is in the order of 0.2W.
The bypass capacitor C1 mainly functions as an absorption resistor R1 providing a radio frequency path to play a role of isolating direct connection and direct connection, and in this embodiment, the bypass capacitor C1 is a plate capacitor, and a capacitance value thereof depends on an operating frequency band, and the lower the frequency band, the larger the capacitance value.
The diode PIN is a microwave power control element, the microwave impedance of the diode PIN can be modulated by radio frequency power level under a certain direct current bias state, and in practical application, the design of device parameters of the diode PIN, such as conduction voltage, reverse breakdown voltage, junction capacitance, carrier service life and the like, is determined according to the requirements of the working frequency band, the bearing power, the passband insertion loss and the like of a circuit.
③ DC bias circuit
Connecting a direct current bias circuit between the input end P1 and the isolation end P2 of the broadband bridge; the DC bias circuit includes: the circuit comprises a choke inductor L which is respectively connected with an input end P1 and an isolation end P2, the other ends of the choke inductor L are connected and communicated, a bias resistor R0 and a decoupling capacitor C2 are connected on the circuit where the other ends are located, the other ends of the bias resistor R0 and the decoupling capacitor C2 are respectively connected with a direct current bias power supply Vd and a grounding end, the direct current bias power supply Vd is generally set to be +5V, and grounding is achieved through the grounding end.
The bias resistor R0 provides a proper dc bias state for the diode PIN under a certain bias voltage state. For the design of the bias resistor R0, the bias resistor R0 is set as a thin film resistor, and the current passing capacity of the thin film resistor R0 is more than 50 mA; the resistance value R of the bias resistor R0 is determined by the forward conduction voltage and the conduction current of the diode PIN, and the calculation formula of the resistance value R of the bias resistor R0 is as follows:
R＝(Vc-Vj)/(2*I)
wherein Vc is a bias voltage (generally +5V), Vj is a forward conduction voltage (unit is V) of the diode PIN, and I is a sum (unit is ampere) of forward conduction currents of the diode PIN in each adjustable microwave impedance circuit (the adjustable microwave impedance circuit I and the adjustable microwave impedance circuit ii).
The choke inductor L plays a direct-current and alternating-current separating role and mainly provides a direct-current path for the diode PIN, for the design of the choke inductor L, the choke inductor LL provides a direct-current bias loop for the diode PIN, the current passing capacity of the choke inductor L is larger than 50mA, the size of the inductance value is determined by a working frequency band, and the choke inductor L is a planar inductor or a coil inductor.
For the design of the decoupling capacitor C2, the main role of the decoupling capacitor C2 is: in the embodiment, the decoupling capacitor C2 is a flat capacitor, the capacitance value of which depends on the working frequency band, and the lower the frequency band, the larger the capacitance value.
The grounding ends arranged at the positions are all set as grounding metal through holes Via, the metalized grounding through holes mainly play a grounding role and form a direct current loop, when in actual application, the grounding metal through holes Via are integrated on a substrate material and used for grounding a circuit to be grounded on the surface of the substrate material, the grounding metal through holes Via are connected with a grounding metal layer on the substrate material through vertical metal through holes, and the specific aperture size of the grounding metal through holes Via can be determined by the micro-machining process of the substrate material.
Based on the ultra-wideband miniaturized amplitude expanding circuit, if a circuit structure is realized by adopting a micro-assembly process, the diode PIN, the blocking capacitor C0, the decoupling capacitor C2, the bypass capacitor C1, the bias resistor R0, the absorption resistor R1, the choke inductor L, the input transmission line W1, the output transmission line W2, the wideband bridge and the metalized grounding through hole are all integrated on a ceramic substrate material, and specifically, the substrate material can be alumina ceramic or aluminum nitride ceramic; if the device is realized by adopting a microelectronic process, the diode PIN, the blocking capacitor C0, the decoupling capacitor C2, the bypass capacitor C1, the bias resistor R0, the absorption resistor R1, the choke inductor L, the input transmission line W1, the output transmission line W2, the broadband bridge and the metalized grounding through hole are all integrated on a semiconductor substrate to be manufactured.
Based on the miniaturized range expansion circuit of ultra wide band that provides above-mentioned, its theory of operation is as follows:
s1: setting a direct current bias power supply Vd to be +5V generally, feeding the direct current bias power supply Vd through a bias resistor R0 and a choke inductor L, adjusting the value of the bias resistor R0 to change the bias voltage of a diode PIN, but ensuring that the bias voltage cannot exceed +0.65V, and even burning the diode PIN because the bias voltage loses the capacity of amplitude expansion, and the decoupling capacitor C2 and the choke inductor L play a role of 'isolating alternating current and direct current' in a direct current bias circuit;
s2: after the direct current bias of the diode PIN is completed, a radio frequency signal is fed into an input end P1 of the broadband bridge through an input transmission line W1, the input radio frequency power level should not exceed-15 dBm (generally set to-20 dBm) initially, at the moment, the whole amplitude expansion circuit is in a small signal insertion loss state, and the circuit insertion loss is determined by the bias voltage of the diode PIN and the resistance value of an absorption resistor R1;
s3: and then increasing the radio frequency power level, wherein when the radio frequency power level is increased to a certain degree, the microwave resistance of the diode PIN begins to be obviously reduced, so that the reflection coefficients of the ports of the straight-through end P3 and the coupling end P4 of the broadband bridge are gradually increased, the isolation output end can obtain more radio frequency power, the insertion loss of the amplitude expanding circuit can be reduced along with the increase of the excitation power, and the amplitude expanding circuit is applied to a radio frequency amplification channel so as to realize amplitude expansion, compensate the gain compression characteristic of an amplifier, improve the dynamic range of a radio frequency receiving channel, or improve the linear output power of a radio frequency transmitting channel.
Based on the working principle, the ultra-wideband miniaturized amplitude expanding circuit provided by the embodiment is subjected to principle verification in a 6-18 GHz ultra-wideband receiving and transmitting radio frequency channel, the amplitude expansion of 3 dB-5 dB can be realized through proper bias setting, the full-band standing wave is less than 2, and the borne power continuous wave is more than 1W.
It should be noted that, in the description of the present application, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Further, in the description of the present application, the meaning of "a plurality" means at least two unless otherwise specified.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and when the program is executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (9)
1. An ultra-wideband miniaturized amplitude dilation circuit, the amplitude dilation circuit comprising:
the broadband bridge circuit comprises a broadband bridge, an input transmission line and an output transmission line, wherein the input transmission line and the output transmission line are respectively connected with the input end and the isolation end of the broadband bridge through a blocking capacitor;
the direct current bias circuit is connected between the input end and the isolation end of the broadband bridge;
the direct connection end and the coupling end of the broadband bridge are respectively connected with the adjustable microwave impedance circuit;
the adjustable microwave impedance circuit comprises:
a diode;
the absorption resistor and the bypass capacitor are connected in series, the absorption resistor is connected with one end of the diode to form a first connection point, and the bypass capacitor is connected with the other end of the diode to form a second connection point;
the first connecting point is connected to the through end or the coupling end of the broadband bridge, and the second connecting point is connected to the grounding end.
2. The ultra-wideband miniaturized amplitude expanding circuit according to claim 1, wherein the absorption resistor is a thin film resistor having a resistance value of 30-40 ohms.
3. The ultra-wideband miniaturized amplitude dilating circuit of claim 1, wherein the dc bias circuit comprises:
the other ends of the two choke inductors are connected and communicated, a circuit where the other end is located is connected with a bias resistor and a decoupling capacitor, and the other ends of the bias resistor and the decoupling capacitor are respectively connected with a direct-current bias power supply and a grounding end.
4. The ultra-wideband miniaturized amplitude expanding circuit according to claim 3, wherein the bias resistor is set to be a thin film resistor, and the current passing capacity thereof should be more than 50 mA; the calculation formula of the resistance value R of the bias resistor is as follows:
R＝(Vc-Vj)/(2*I)
wherein Vc is a bias voltage, Vj is a forward conduction voltage of the diode, and I is a sum of forward conduction currents of the diodes in each adjustable microwave impedance circuit.
5. The ultra-wideband miniaturized amplitude expanding circuit of claim 3, wherein the current passing capacity of the choke inductor is larger than 50mA, and the choke inductor is selected from a planar inductor or a coil inductor.
6. The ultra-wideband miniaturized amplitude expanding circuit according to claim 3, wherein the amplitude expanding circuit is integrated on a substrate material by an integration process, and the substrate material is selected according to different integration processes, and if the micro-assembly process is adopted for integration, a ceramic substrate material is selected; if a microelectronic process is used, a semiconductor substrate material is selected.
7. The ultra-wideband miniaturized amplitude dilating circuit of claim 6, wherein the ground terminal is provided as a ground metal via integrated in the substrate material, the ground metal via being connected to a ground metal layer on the substrate material via a vertical metal via.
8. The ultra-wideband miniaturized amplitude dilating circuit of claim 1, wherein the wideband bridge is set to a 90 degree 3dB bridge.
9. The ultra-wideband miniaturized amplitude enhancement circuit of claim 3 wherein the blocking capacitor, the bypass capacitor and the decoupling capacitor are all provided as plate capacitors.
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