CN111988003A - General structure of analog predistorter suitable for TWTA and SSPA - Google Patents
General structure of analog predistorter suitable for TWTA and SSPA Download PDFInfo
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- CN111988003A CN111988003A CN202010876692.1A CN202010876692A CN111988003A CN 111988003 A CN111988003 A CN 111988003A CN 202010876692 A CN202010876692 A CN 202010876692A CN 111988003 A CN111988003 A CN 111988003A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
- H03F1/3282—Acting on the phase and the amplitude of the input signal
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Abstract
The invention discloses a general structure of an analog predistorter suitable for TWTA and SSPA, which comprises a radio-frequency signal input port, a radio-frequency signal output port, a grounding circuit, a first part of a bridge reflection type structure, a second part of a series transmission type structure and a third part of a power dividing and combining structure, wherein the first part comprises a 3dB 90-degree bridge, a first blocking capacitor, a second blocking capacitor, a first Schottky diode, a second Schottky diode, a first direct current bias circuit and a second direct current bias circuit, the second part comprises a third blocking capacitor, a third Schottky diode, a fourth blocking capacitor, a third direct current bias circuit and a fourth radio-frequency choke inductor, and the third part comprises an input signal power divider and an output signal power combiner; the structure can change the working mode of the predistorter by changing the bias state of the circuit, improves the adjustability of the whole circuit, and can realize the free switching of the analog predistorter under two working states of TWTA and SSPA.
Description
Technical Field
The invention relates to the technical field, in particular to a general structure of an analog predistorter suitable for TWTA and SSPA.
Background
With the increasing development of communication technology, higher requirements are made on bit error rate, channel capacity and the like in the signal transmission process. The power amplifier is an indispensable key component in a wireless communication system, but as the input power of the power amplifier increases, the amplitude and the phase of the gain of the power amplifier change nonlinearly. For a traveling wave tube power amplifier (TWTA), as the input power increases, the amplitude and phase of the gain both show a gradual compression trend, while for a Solid State Power Amplifier (SSPA), as the input power increases, the amplitude trend of the gain shows a gradual compression trend and the phase shows a gradual expansion trend. The closer to saturated output, the more severe the nonlinear distortion of the power amplifier. And such non-linear distortion can severely degrade the performance of the communication system. To solve this problem, linearization techniques have been developed.
Linearization techniques include power back-off, feed-forward, negative feedback, predistortion, and the like. The predistortion method includes analog predistortion and digital predistortion. The analog predistortion technology is widely applied to the communication field due to the advantages of simple design, low cost and the like. The analog predistortion technique is a linearization technique for performing pre-compensation on a target power amplifier curve. The analog predistorter is divided into a series transmission type, a parallel transmission type, an electric bridge reflection type and a two-way type structure according to different circuit structures, and a schottky diode is mostly adopted as a nonlinear signal generating device to generate a curve with a characteristic opposite to the nonlinear characteristic of a target power amplifier so as to realize the linearization of the power amplifier.
The analog predistorter is mainly divided into four types: series transmission, parallel transmission, bridge reflection and two-way structures. The transmission type analog predistorter has a simple structure, and mainly generates a predistortion curve which is complementary with the nonlinear characteristic of a power amplifier on a main transmission line by connecting nonlinear devices in series or in parallel; the bridge reflection type adopts a 3dB bridge structure, nonlinear devices are loaded at the through and coupling ports of the bridge, and the required transmission characteristics are generated by utilizing the synthesis of two paths of reflection signals; the two-way analog predistorter is based on the theory of vector synthesis of two-way signals, and generally adopts a phase shifter and an attenuator to form a linear branch, utilizes a nonlinear device to form a nonlinear branch, and generates the required transmission characteristic through the vector synthesis of two-way signals.
Currently, analog predistorters are used to improve the linearity of both TWTA and SSPA amplifiers. As the input power increases, the two types of power amplifier gains generate compression characteristics, and the phase change characteristics are opposite along with the increase of the power, so that the nonlinear characteristics are different. Therefore, different forms of circuit schemes are adopted for the linearization circuit design of the TWTA amplifier and the SSPA amplifier, which greatly increases the design cost and limits the flexibility of the application of the linearizer. The currently applied analog predistorter has few adjustable parameters and poor circuit adjustability; different circuit design schemes can be adopted aiming at different types of power amplifiers (TWTA, SSPA), and a universal structure is not provided.
Disclosure of Invention
The invention aims to provide a general structure of an analog predistorter suitable for TWTA and SSPA, which can change the working mode of the predistorter by changing the bias state of a circuit, improve the adjustability of the whole circuit and realize the free switching of the analog predistorter under two working states of TWTA and SSPA.
The embodiment of the invention is realized by the following steps:
a common structure of an analog predistorter suitable for TWTA and SSPA comprises a first part of a bridge reflection type structure, a second part of a series transmission type structure and a third part of a power dividing and combining structure, wherein the first part is positioned on an upper branch, the second part is positioned on a lower branch, the third part is positioned in the middle, the first part comprises a 3dB 90-degree bridge, a first blocking capacitor, a second blocking capacitor, a first Schottky diode, a second Schottky diode, a first direct current bias circuit and a second direct current bias circuit, the 3dB 90-degree bridge divides a circuit into a through port and a coupling port, the through port of the 3dB 90-degree bridge is connected with the first Schottky diode through the first blocking capacitor, the first direct current bias circuit is connected between the first blocking capacitor and the first Schottky diode, the coupling end of the 3dB 90-degree bridge is connected with the second Schottky diode through the second blocking capacitor, the second direct current bias circuit is connected between the second blocking capacitor and the second Schottky diode; the second part comprises a third blocking capacitor, a third Schottky diode, a fourth blocking capacitor and a third direct current bias circuit, the third Schottky diode is connected between the third blocking capacitor and the fourth blocking capacitor, and the third direct current bias circuit is connected between the third blocking capacitor and the third Schottky diode; the third part comprises an input signal power divider and an output signal power synthesizer, the input signal power divider is connected with the 3dB 90-degree electric bridge of the upper branch and the third blocking capacitor of the lower branch, and the output signal power synthesizer is connected with the 3dB 90-degree electric bridge of the upper branch and the fourth blocking capacitor of the lower branch.
In a preferred embodiment of the present invention, an input rf signal passes through the input signal power divider and is divided into an upper branch and a lower branch, the rf signal of the upper branch is divided into two orthogonal signals at a through port and a coupling port through a 3dB90 ° bridge, the signals are respectively loaded onto a first schottky diode and a second schottky diode through a first blocking capacitor and a second blocking capacitor, and the reflection coefficients of the corresponding branches are changed by utilizing the nonlinear change of the input impedance of the schottky diode, so as to generate two reflected signals, the two reflected signals are synthesized and output at an isolation port of the 3dB90 ° bridge, and the rf signal of the lower branch passes through a third blocking capacitor to reach a third schottky diode and then outputs a nonlinear signal through a fourth blocking capacitor.
In a preferred embodiment of the present invention, the impedances of the first schottky diode, the second schottky diode, and the third schottky diode are related to the bias state and the input power level of the rf signal, and the bias states of the first schottky diode, the second schottky diode, and the third schottky diode are provided by the first dc bias circuit, the second dc bias circuit, and the third dc bias circuit, respectively.
In a preferred embodiment of the present invention, the first dc bias circuit includes a first rf choke inductor, a first schottky diode bias resistor and a first schottky diode dc bias voltage, which are electrically connected in sequence, and the second dc bias circuit includes a second rf choke inductor, a second schottky diode bias resistor and a second schottky diode dc bias voltage, which are electrically connected in sequence, wherein one end of the first rf choke inductor is electrically connected between the first dc blocking capacitor and the first schottky diode, and one end of the second rf choke inductor is electrically connected between the second dc blocking capacitor and the second schottky diode.
In a preferred embodiment of the present invention, the third dc bias circuit includes a third rf choke inductor, a third schottky diode bias resistor and a third schottky diode dc bias voltage, which are electrically connected in sequence, and one end of the third rf choke inductor is electrically connected between the third dc blocking capacitor and the third schottky diode.
In a preferred embodiment of the present invention, the second portion further includes a fourth rf choke inductor, and the fourth rf choke inductor is electrically connected between the third schottky diode and the fourth dc blocking capacitor.
In a preferred embodiment of the present invention, the general structure of the analog predistorter further includes a ground circuit, the first schottky diode dc bias voltage, the second schottky diode dc bias voltage, the third schottky diode dc bias voltage and the fourth rf choke inductor are respectively connected to the ground circuit, and the ground circuit is connected between the first schottky diode and the second schottky diode.
In a preferred embodiment of the present invention, the general structure of the analog predistorter further includes a radio frequency signal input port and a radio frequency signal output port, the radio frequency signal input port is connected to the input signal equal power divider, and the radio frequency signal output port is connected to the output signal power combiner.
The invention has the beneficial effects that:
the working mode of the predistorter is changed by changing the bias state of the circuit, and the Schottky diode is used as a nonlinear signal generating device, so that the circuit structure is simpler; the radio frequency signal input port adopts an input signal equipower splitter to equally divide a signal into an upper branch and a lower branch; one branch adopts a bridge reflection type structure to generate a curve which can be complementary with the TWTA nonlinear characteristic; the other branch adopts a serial transmission mode to generate a curve complementary with the non-linear characteristic of the SSPA; the two branch signals are subjected to vector synthesis through the output end power synthesizer, and the function of adjusting the amplitude expansion amount and the phase expansion or compression characteristic of the synthesized vector signal is realized by adjusting the bias state of the three Schottky diodes; compared with the traditional circuit structure, the combination of the bridge reflection type and the series transmission type is adopted, so that the working mode of the analog predistorter becomes adjustable; each Schottky diode adopts a separate power supply mode, so that the adjustability of the whole circuit is improved, the whole analog predistorter structure has the advantages of high predistortion curve adjustability, simple structure, capability of realizing free switching of the analog predistorter under two working states of TWTA (time and frequency offset) and SSPA (steady state linear power amplifier), and the like.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope.
FIG. 1 is a diagram of the general structure of an analog predistorter suitable for use in TWTA and SSPA in accordance with the present invention;
FIG. 2 is a simulation result of a predistortion curve of the analog predistorter of the present invention;
FIG. 3 is a simulation result of a predistortion curve of the analog predistorter of the present invention;
icon: 1-a radio frequency signal input port; 2-a radio frequency signal output port; 3-input signal equipower divider; 4-output signal power combiner; 5-3dB 90 degree bridge; 6-a first blocking capacitor; 7-a second blocking capacitor; 8-a first radio frequency choke inductance; 9-a first radio frequency choke inductance; 10-a first schottky diode; 11-a second schottky diode; 12-a first schottky diode bias resistor; 13-a second schottky diode bias resistor; 14-first schottky diode dc bias voltage; 15-a second schottky diode dc bias voltage; 16-a third blocking capacitor; 17-a fourth dc blocking capacitance; 18-a third schottky diode; 19-third radio choke inductance; 20-a fourth radio frequency choke inductance; 21 a third schottky diode bias resistor; 22-third schottky diode dc bias voltage.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
First embodiment
Referring to fig. 1, the present embodiment provides a general structure of an analog predistorter suitable for TWTA and SSPA, which includes a radio frequency signal input port 1, a radio frequency signal output port 2, a ground circuit, a first portion of a bridge reflection structure, a second portion of a series transmission structure, and a third portion of a power dividing and combining structure, where the first portion includes a 3dB90 ° bridge 5, a first dc blocking capacitor 6, a second dc blocking capacitor 7, a first schottky diode 10, a second schottky diode 11, a first dc bias circuit and a second dc bias circuit, the second portion includes a third dc blocking capacitor 16, a third schottky diode 18, a fourth dc blocking capacitor 17, a third dc bias circuit and a fourth radio frequency inductor choke 20, and the third portion includes an input signal power divider and an output signal power combiner 4, where the first dc bias circuit includes a first radio frequency inductor 98, a second rf inductor choke 98, a third inductor choke 20, a third inductor choke and a fourth inductor choke 4 that are electrically connected in sequence, The first Schottky diode bias resistor 12 and the first Schottky diode direct current bias voltage 14 are connected in sequence, the second direct current bias circuit comprises a second radio frequency choke inductor, a second Schottky diode bias resistor 13 and a second Schottky diode direct current bias voltage 15 which are connected in sequence, and the third direct current bias circuit comprises a third radio frequency choke inductor 19, a third Schottky diode bias resistor 21 and a third Schottky diode direct current bias voltage 22 which are connected in sequence; the working mode of the predistorter can be changed by changing the bias state of the circuit, so that the adjustability of the whole circuit is improved, and the analog predistorter can be freely switched under two working states, namely a traveling wave tube amplifier and a solid-state power amplifier.
In the embodiment, the first part is positioned in the upper branch, the second part is positioned in the lower branch, the third part is positioned in the middle, the radio frequency signal is input from the third part, the radio frequency signal is transmitted to the third part after passing through the first part, and the radio frequency signal is input from the third part and reflected to the third part by the second part to be finally output; the first part comprises a 3dB 90-degree electric bridge 5, a first blocking capacitor 6, a second blocking capacitor 7, a first Schottky diode 10, a second Schottky diode 11, a first direct current bias circuit and a second direct current bias circuit, the 3dB 90-degree electric bridge 5 is respectively connected with an input signal power divider and an output signal power synthesizer 4 of the third part, the 3dB 90-degree electric bridge 5 divides the circuit into two paths of a through port and a coupling port, the through port of the 3dB 90-degree electric bridge 5 is electrically connected with the first blocking capacitor 6 and is connected with the first Schottky diode 10 through the first blocking capacitor 6, the first direct current bias circuit is connected between the first blocking capacitor 6 and the first Schottky diode 10, the coupling end of the 3dB 90-degree electric bridge 5 is electrically connected with the second blocking capacitor 7 and is connected with the second Schottky diode 11 through the second blocking capacitor 7, the second direct current bias circuit is connected between the second direct current blocking capacitor 7 and the second Schottky diode 11, wherein a circuit of a through port where the first direct current blocking capacitor 6, the first Schottky diode 10 and the first direct current bias circuit are located and a circuit of a coupling port where the second direct current blocking capacitor 7, the second Schottky diode 11 and the second direct current bias circuit are located are in a symmetrical circuit structure; the first direct current bias circuit comprises a first radio frequency choke inductor 98, a first Schottky diode bias resistor 12 and a first Schottky diode direct current bias voltage 14 which are electrically connected in sequence, the second direct current bias circuit comprises a second radio frequency choke inductor, a second Schottky diode bias resistor 13 and a second Schottky diode direct current bias voltage 15 which are electrically connected in sequence, one end of the first radio frequency choke inductor 98 is electrically connected between the first blocking capacitor 6 and the first Schottky diode 10, one end of the second radio frequency choke inductor is electrically connected between the second blocking capacitor 7 and the second Schottky diode 11, the first Schottky diode direct current bias voltage 14 and the second Schottky diode direct current bias voltage 15 are respectively connected with a grounding circuit, and the first Schottky diode 10 and the second Schottky diode 11 are electrically connected with a grounding circuit.
The second part comprises a third blocking capacitor 16, a third Schottky diode 18, a fourth blocking capacitor 17 and a third direct current bias circuit, wherein the third Schottky diode 18 is connected between the third blocking capacitor 16 and the fourth blocking capacitor 17, and the third direct current bias circuit is connected between the third blocking capacitor 16 and the third Schottky diode 18; the third direct current bias circuit comprises a third radio frequency choke inductor 19, a third Schottky diode bias resistor 21 and a third Schottky diode direct current bias voltage 22 which are electrically connected in sequence, one end of the third radio frequency choke inductor 19 is electrically connected between the third blocking capacitor 16 and the third Schottky diode 18, a fourth radio frequency choke inductor 20 is electrically connected between the third Schottky diode 18 and the fourth blocking capacitor 17, and the third Schottky diode direct current bias voltage 22 and the fourth radio frequency choke inductor 20 are respectively connected with a grounding circuit.
The third part comprises an input signal power divider and an output signal power combiner 4, a radio frequency signal input port 1 is connected to an input signal equipower divider 3, a radio frequency signal output port 2 is connected to the output signal power combiner 4, a radio frequency signal enters the input signal power divider through the radio frequency signal input port 1, the radio frequency signal passing through the input signal power divider is transmitted to the first part of the upper branch and the second part of the lower branch, the input signal power divider is connected to a 3dB 90-degree electric bridge 5 of the upper branch and a third blocking capacitor 16 of the lower branch, and the output signal power combiner 4 is connected to the 3dB 90-degree electric bridge 5 of the upper branch and a fourth blocking capacitor 17 of the lower branch.
An input radio frequency signal passes through an input signal power divider and is divided into an upper branch and a lower branch, the radio frequency signal of the upper branch is divided into two orthogonal signals at a through port and a coupling port through a 3dB 90-degree bridge 5, the radio frequency signal is respectively loaded on a first Schottky diode 10 and a second Schottky diode 11 through a first blocking capacitor 6 and a second blocking capacitor 7, the reflection coefficients of the corresponding branches are changed by utilizing the nonlinear change of input impedance of the first Schottky diode 10 and the second Schottky diode 11, so that two reflected signals are generated, the two reflected signals are synthesized and output at a waveguide orthogonal bridge isolation port of the 3dB 90-degree bridge 5, the radio frequency signal of the lower branch passes through a third blocking capacitor 16 to reach a third Schottky diode 18, and then the radio frequency signal of the lower branch is output to an output signal power synthesizer 4 through a fourth blocking capacitor 17; the impedances of the first schottky diode 10, the second schottky diode 11 and the third schottky diode 18 are related to the bias state and the magnitude of the input power of the radio frequency signal, and the bias states of the first schottky diode 10, the second schottky diode 11 and the third schottky diode 18 are provided by a first direct current bias circuit, a second direct current bias circuit and a third direct current bias circuit, respectively.
Referring to fig. 2 and fig. 3, fig. 2 is a graph showing the variation curve of the gain amplitude of the predistorter with the increase of the input power when the third schottky diode is in different bias states at the operating frequency of 18GHz, and fig. 3 is a graph showing the variation curve of the gain phase of the predistorter with the increase of the input power when the third schottky diode is in different bias states at the operating frequency of 18 GHz. By simulating the simulation result of the predistortion curve, the amplitude characteristic of the voltage tunable gain at 18GHz and the phase characteristic of the voltage tunable gain at 18GHz, it can be known that the nonlinear signals generated by the first Schottky diode 10 and the second Schottky diode 11 are synthesized at the isolation port through the 3dB 90-degree electric bridge 5, and a curve capable of compensating for the TWTA nonlinear characteristic is generated; the third schottky diode 18 generates an adjustable nonlinear curve, and the characteristics of the nonlinear curve can be changed by changing the direct-current bias voltage 22 of the third schottky diode and the direct-current bias resistance of the third schottky diode 18, so that an expansion phase curve can be generated, and a compression phase curve can be generated; finally, the upper and lower branch radio frequency signals are synthesized, and the function of predistortion of different types of power amplifiers can be realized by adjusting the bias state of the third Schottky diode 18.
In summary, the working mode of the predistorter is changed by changing the bias state of the circuit, and the schottky diode is used as the nonlinear signal generating device, so that the circuit structure is simpler; the radio frequency signal input port adopts an input signal equipower splitter to equally divide a signal into an upper branch and a lower branch; one branch adopts a bridge reflection type structure to generate a curve which can be complementary with the TWTA nonlinear characteristic; the other branch adopts a serial transmission mode to generate a curve complementary with the non-linear characteristic of the SSPA; the two branch signals are subjected to vector synthesis through the output end power synthesizer, and the function of adjusting the amplitude expansion amount and the phase expansion or compression characteristic of the synthesized vector signal is realized by adjusting the bias state of the three Schottky diodes; compared with the traditional circuit structure, the combination of the bridge reflection type and the series transmission type is adopted, so that the working mode of the analog predistorter becomes adjustable; each Schottky diode adopts a separate power supply mode, so that the adjustability of the whole circuit is improved, the whole analog predistorter structure has the advantages of high predistortion curve adjustability, simple structure, capability of realizing free switching of the analog predistorter under two working states of TWTA (time and frequency offset) and SSPA (steady state linear power amplifier), and the like.
This description describes examples of embodiments of the invention, and is not intended to illustrate and describe all possible forms of the invention. It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (8)
1. An analog predistorter universal structure suitable for TWTA and SSPA is characterized by comprising a first part of a bridge reflection type structure, a second part of a series transmission type structure and a third part of a power dividing and combining structure, wherein the first part is positioned on an upper branch, the second part is positioned on a lower branch, the third part is positioned in the middle, the first part comprises a 3dB 90-degree electric bridge, a first direct-current blocking capacitor, a second direct-current blocking capacitor, a first Schottky diode, a second Schottky diode, a first direct-current bias circuit and a second direct-current bias circuit, the 3dB 90-degree electric bridge divides a circuit into two paths of a through port and a coupling port, the through port of the 3dB 90-degree electric bridge is connected with the first Schottky diode through the first direct-current blocking capacitor, the first direct-current bias circuit is connected between the first direct-current blocking capacitor and the first Schottky diode, the coupling end of the 3dB 90-degree electric bridge is connected with a second Schottky diode through a second blocking capacitor, and the second direct current bias circuit is connected between the second blocking capacitor and the second Schottky diode; the second part comprises a third blocking capacitor, a third Schottky diode, a fourth blocking capacitor and a third direct current bias circuit, the third Schottky diode is connected between the third blocking capacitor and the fourth blocking capacitor, and the third direct current bias circuit is connected between the third blocking capacitor and the third Schottky diode; the third part comprises an input signal power divider and an output signal power combiner, the input signal power divider is connected to the 3dB 90-degree bridge of the upper branch and the third blocking capacitor of the lower branch, and the output signal power combiner is connected to the 3dB 90-degree bridge of the upper branch and the fourth blocking capacitor of the lower branch.
2. An analog predistorter generic structure suitable for both TWTA and SSPA in accordance with claim 1, the device is characterized in that an input radio frequency signal is divided into an upper branch and a lower branch after passing through an input signal power divider, the radio frequency signal of the upper branch is divided into two orthogonal signals at a through port and a coupling port through a 3dB 90-degree bridge, the signals are respectively loaded on a first Schottky diode and a second Schottky diode through a first blocking capacitor and a second blocking capacitor, the reflection coefficient of the corresponding branch is changed by utilizing the nonlinear change of the input impedance of the Schottky diodes, therefore, two reflected signals are generated and synthesized and output at the waveguide orthogonal bridge isolation port of the 3dB 90-degree bridge, the lower branch radio frequency signal reaches a third Schottky diode through a third blocking capacitor, and then a nonlinear signal is output through a fourth blocking capacitor.
3. The architecture of claim 2, wherein the impedances of the first, second and third schottky diodes are related to the bias state and the input power level of the rf signal, and the bias states of the first, second and third schottky diodes are provided by the first, second and third dc bias circuits, respectively.
4. The architecture as claimed in claim 3, wherein the first DC bias circuit comprises a first RF choke inductor, a first Schottky diode bias resistor and a first Schottky diode DC bias voltage which are electrically connected in sequence, the second DC bias circuit comprises a second RF choke inductor, a second Schottky diode bias resistor and a second Schottky diode DC bias voltage which are electrically connected in sequence, one end of the first RF choke inductor is electrically connected between the first DC blocking capacitor and the first Schottky diode, and one end of the second RF choke inductor is electrically connected between the second DC blocking capacitor and the second Schottky diode.
5. The architecture of claim 4, wherein the third DC bias circuit comprises a third RF choke inductor, a third Schottky diode bias resistor and a third Schottky diode DC bias voltage, which are electrically connected in sequence, and one end of the third RF choke inductor is electrically connected between the third blocking capacitor and the third Schottky diode.
6. An analog predistorter common structure for TWTA and SSPA as in claim 5 wherein said second section further comprises a fourth rf choke inductance, said fourth rf choke inductance being electrically connected between the third schottky diode and the fourth dc blocking capacitance.
7. The analog predistorter common structure for TWTA and SSPA as claimed in claim 6, wherein said analog predistorter common structure further comprises a ground circuit, said first schottky diode dc bias voltage, said second schottky diode dc bias voltage, said third schottky diode dc bias voltage and said fourth rf choke inductor are respectively connected to said ground circuit, and said ground circuit is connected between said first schottky diode and said second schottky diode.
8. The architecture of claim 3, further comprising an RF input port connected to the input signal equalizer and an RF output port connected to the output signal power combiner.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113114124A (en) * | 2021-04-09 | 2021-07-13 | 中国电子科技集团公司第十二研究所 | Broadband adjustable linearizer of space traveling wave tube |
| CN113285679A (en) * | 2021-04-23 | 2021-08-20 | 中国电子科技集团公司第二十九研究所 | Ultra-wideband miniaturized amplitude expanding circuit |
| CN114553153A (en) * | 2022-02-28 | 2022-05-27 | 电子科技大学 | Amplitude-phase independent adjustable analog predistortion linearizer |
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| CN113285679A (en) * | 2021-04-23 | 2021-08-20 | 中国电子科技集团公司第二十九研究所 | Ultra-wideband miniaturized amplitude expanding circuit |
| CN114553153A (en) * | 2022-02-28 | 2022-05-27 | 电子科技大学 | Amplitude-phase independent adjustable analog predistortion linearizer |
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Application publication date: 20201124 |