CN110739922A - ultra-wideband solid-state power amplifier synthesis circuit - Google Patents
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Abstract
The invention discloses an ultra-wideband solid-state power amplifier synthesis circuit, which comprises two four-port bridge networks arranged in a mirror image mode, wherein an input port B of a fourth-port bridge network is connected with matching units, the input port A receives an input microwave signal, the signal is respectively divided into a port C and a port D through the fourth-port bridge network and is output from the port C and the port D, the two output signals are respectively subjected to steps of amplification through a power synthesis unit, the amplified microwave signal is input to an input port C 'and an input port D' of the second four-port bridge network, the output signal is coupled and output through the second four-port bridge network by utilizing a mirror image reversible coupling bridge circuit, a port B 'of the second four-port bridge network outputs a radio-frequency signal to the matching units, and the port A' directly outputs the microwave radio-frequency signal.
Description
Technical Field
The invention belongs to the power transmitting technology of a radar/electronic countermeasure system, in particular to an ultra-wideband solid-state power amplifier synthetic circuit.
Background
In recent years, with the rapid development of the fields of electronic countermeasure, phased array radar, electromagnetic compatibility (EMI) test and the like, the requirements of a high-performance and high-power interference transmission system are higher and higher, as a key component of the transmission system, the output power of a power amplifier directly determines the performance such as the working distance, the anti-interference capability and the like of a transmitter, as the third-generation semiconductor material devices such as GaAs, GaN and the like are mature, the semiconductor manufacturing process technology is continuously improved, at present, a solid-state power amplifier based on the remarkable advantages of high forbidden bandwidth, high saturated electronic offset speed, high breakdown electric field strength and the like is gradually applied to the transmission system, in order to achieve ultra-wideband and high transmission power, in addition to using a GaN chip unit with higher power, multi-path synthesis is considered, the maximum power of a 6-18 GHz power amplifier chip based on the GaN material in the market is about 10W, the additional efficiency is about 20%, even if the multi-path synthesis efficiency is close to 90%, the power consumption of the power amplifier is larger, in addition, the reflected power of the output signal of the high power device also causes thermal deposition (junction temperature of the power amplifier is too high), and the reliability of the power amplifier is a key issue of the heat dissipation performance of .
At present, the method for solving the problem of synthesis of a high-power amplifier comprises (1) realizing 1-N and N-1 multi-path synthesis by using a sector network, wherein the N-path synthesis network adopts Wilkinson or other circuit forms to realize power synthesis as shown in figure 1, (2) adopting a two-way synthesis mode of Wilkinson or other circuits, and combining two paths of synthesis networks into a multi-path to realize 1-N and N-1 multi-path synthesis as shown in figure 2.
Disclosure of Invention
The invention aims to provide circuit topology structures, low process realization difficulty, wide working frequency bandwidth and strong harmonic suppression capability.
The technical scheme for achieving the purpose of the invention is that an ultra-wideband solid-state power amplifier synthesis circuit comprises two four-port bridge networks arranged in a mirror image mode, wherein an input port B of a fourth-port bridge network is connected to matching units, an input port A receives an input microwave signal, the signal is divided into a port C and a port D through the fourth-port bridge network and is output, the two output signals are subjected to steps of amplification through a power synthesis unit respectively, the amplified microwave signal is input to an input port C 'and an input port D' of the second four-port bridge network, the output signal is coupled and output through the second four-port bridge network by using a mirror image reversible coupling bridge circuit, a radio-frequency signal is output to the matching units through a port B 'of the second four-port bridge network, and the microwave radio-frequency signal is directly output through the port A'.
, the four-port bridge network realizes the coupling output of two output signals with a phase difference of 90 or 180 degrees, if the 90-degree coupling bridge network is adopted, the second harmonic signal of 3dB is inhibited, and if the 180-degree coupling bridge network is adopted, the second harmonic signal is completely inhibited.
, the ultra-wideband solid-state power amplifier synthesis circuit includes a matching unit, a four-port bridge network, a power synthesis unit, a second four-port bridge network and a second matching unit.
, the matching unit receives the microwave rf signal coupled by the input signal through the th four-port bridge network through the isolated port B, and simultaneously receives the reflected signals from the ports C and D, and performs 50 Ω matching.
, the four-port bridge network receives the input microwave rf signal through the port a, outputs the input microwave rf signal to the th power combining unit and the second power combining unit through the port C and the port D respectively through the 90 or 180 ° bridge network, and outputs the isolated/coupled signal of the input port a to the matching unit through the port B, wherein the phase difference between the signals output by the port C and the port D is 90 or 180 °.
, the power synthesis unit adopts amplifiers or multi-path amplification synthesis networks, and the signal gain value is set according to the power requirement, the power synthesis unit receives the microwave radio frequency signal output by the four-port bridge network port C, and carries out linear or saturation amplification and outputs the microwave radio frequency signal to the second four-port bridge network;
the second power synthesis unit adopts paths of amplifiers or multi-path amplification synthesis networks, the signal gain value of the second power synthesis unit is set according to the power requirement, and the second power synthesis unit receives the microwave radio frequency signal output by the four-port bridge network port D and performs linear or saturated amplification on the microwave radio frequency signal and outputs the microwave radio frequency signal to the second four-port bridge network.
, the second four-port bridge network receives output signals of the power combining unit and the second power combining unit through a port D ' and a port C ', respectively, wherein an output signal from the port C of the fourth-port bridge network is input to the port D ' of the second four-port bridge network, an output signal from the port D of the fourth-port bridge network is input to the port C ' of the second four-port bridge network, the output signal is coupled and output through the 90 or 180 ° bridge network by using the mirror image reversible coupling bridge circuit, the microwave rf signal is output to the second matching unit through the port B ', and the microwave rf signal is directly output through the port a.
, the second matching unit receives the microwave rf signal entering from the port B ' of the second four-port bridge network, and performs 50 Ω matching on the isolation/coupling signal of the microwave rf signal reflected by the port a ' of the second four-port bridge network with the incident signals of the ports C ' and D ' according to the functional requirements, thereby ensuring the normal output of the port a ' of the second four-port bridge network.
Compared with the prior art, the ultra-wideband high-noise suppression synthesis circuit has the remarkable advantages that (1) a mirror coupling bridge is adopted to replace a Wilkinson circuit, 90-degree or 180-degree coupling is realized in a ceramic dielectric chip or air suspension mode, and in the premise of equivalent or better insertion loss, in-band noise signals, particularly in-band harmonic signals, can be suppressed by more than 2.5dB, so that steps are further improved in the in-band power synthesis efficiency of the whole power amplifier, (2) ultra-wideband power distribution/synthesis design is realized, wherein the bridge coupling circuit can meet the coupling synthesis requirements of 6-18 GHz or wider bandwidth on the basis of planar design, the coupling bridge is small in size and convenient to process, (3) low-cost design is realized, the realizability of the adopted coupling synthesis mode is high, the circuit is simple, the batch production cost is low, and (4) the function can be expanded, two-path synthesis is realized by utilizing mirror coupling, and the two-path circuit can be mixed with other synthesis circuits, a -step power circuit is further expanded, and the requirements of a large-power-tolerant matching unit can be met.
Drawings
Fig. 1 is a schematic diagram of a sector multiplexing circuit.
Fig. 2 is a schematic diagram of the principle of two-path power synthesis based on wilkinson circuit.
Fig. 3 is a schematic structural diagram of the ultra-wideband solid-state power amplifier synthesis circuit of the invention.
Fig. 4 is a schematic diagram of two-path power synthesis based on a 90 or 180 ° coupling bridge in the embodiment of the present invention.
Fig. 5 is a schematic diagram of a 90 Lange coupling bridge implementation in an embodiment of the present invention.
Detailed Description
The invention provides circuits with high synthesis efficiency of ultra-wideband solid-state power amplifiers, which comprise paired mirror coupling bridges, high-power matching loads and multiple paths of power amplifier tube cores, wherein the method adopts 90-degree or 180-degree coupling bridges, combines two-by-two through four-port bridge networks, skillfully utilizes the mirror synthesis of the coupling bridges, realizes port standing wave matching by utilizing a matching unit, and realizes the high-efficiency synthesis of microwave signals while inhibiting microwave harmonic signals in ultra-wideband power synthesis.
The whole power synthesis process comprises the following steps that , based on a four-port bridge network, an input signal is divided into two paths to be output, 90-degree or 180-degree coupling output of the two output signals can be achieved according to the coupling degree difference of the bridge network, the output signal is subjected to -step amplification through two power synthesis units, multiple harmonic signals are generated, amplified radio-frequency signals are subjected to mirror image four-port bridge network to achieve power synthesis, if the 90-degree coupling bridge network is adopted, 3dB of second harmonic signals can be theoretically inhibited, if the 180-degree coupling bridge network is adopted, the second harmonic signals can be theoretically completely inhibited, detailed below, an input port A of the four-port bridge network receives input microwave signals, the signals are divided into output signals from a port C and a port D through the four-port bridge network, the two port signals are respectively subjected to -step amplification through the power synthesis units, the amplified microwave signals are input to an input port C 'and an input port D' of the mirror image four-port bridge network, the two-time mutual coupling effect is achieved, output ports are matched with the power synthesis units, and the purpose of inhibiting the second harmonic signals is achieved, and the power synthesis efficiency is improved.
Referring to fig. 3, the ultra-wideband solid-state power amplifier synthesis circuit of the present invention includes two four-port bridge networks arranged in a mirror image, wherein an input port B of an th four-port bridge network is connected to matching units, the input port a receives an input microwave signal, the signal is divided into a port C and a port D through the th four-port bridge network, the two output signals are further amplified by a power synthesis unit step, the amplified microwave signal is input to an input port C 'and an input port D' of a second four-port bridge network, the output signal is coupled and output through the second four-port bridge network by using a mirror image reversible coupling bridge circuit, a port B 'of the second four-port bridge network outputs a radio frequency signal to a matching unit, and the port a' directly outputs a microwave radio frequency signal.
The four-port bridge network realizes the coupling output of two output signals with a phase difference of 90 or 180 degrees, if the 90-degree coupling bridge network is adopted, the second harmonic signal of 3dB is inhibited, and if the 180-degree coupling bridge network is adopted, the second harmonic signal is completely inhibited.
Specifically, the ultra-wideband solid-state power amplifier synthesis circuit comprises a matching unit 1, a fourth-port bridge network 2, a power synthesis unit 3, a second power synthesis unit 4, a second four-port bridge network 5 and a second matching unit 6, the 1 matching unit 1 receives a microwave radio-frequency signal, an input signal of which is coupled through the fourth-port bridge network 2, through an isolation port B, receives reflected signals of a port C and a port D, performs 50 Ω matching, the 3 fourth-port bridge network 2 receives an input microwave radio-frequency signal through a port a, outputs the input microwave radio-frequency signal through a port C and a port D to a 3 rd power synthesis unit 3 and a second power synthesis unit 4 through a 90 or 180 ° bridge network, outputs an isolated/coupled signal of an input port a to a 5 matching unit 1 through a port B, outputs a signal through a port C and a port D to a power synthesis unit 3 and a power synthesis unit , outputs a linear amplified signal through a port B3 ', a second power synthesis unit 3 ', a power synthesis unit, outputs a linear amplified signal input signal through a port B and a port B ', a power synthesis unit 3 ', a power synthesis unit, outputs a linear amplification signal input signal through a port B, a linear amplification unit, a power synthesis unit, a port B ', a linear amplification unit, a power synthesis unit, a linear amplification unit, a power synthesis unit, a power.
In addition, different substrate materials or structure realization modes are adopted, the transmission loss of the four-port bridge network can be reduced in steps, harmonic suppression and low-loss design of the network are integrated, and the synthesis efficiency of two paths of power can be effectively improved.
The invention is further described in detail in connection with the figures and the embodiments.
Examples
The ultra-wideband solid-state power amplifier synthesis circuit covers a bandwidth with the frequency of 6-18 GHz or wider, realizes second harmonic tuning through a mirror bridge, and realizes high-efficiency output of power amplifier synthesis power, and is based on the transmission matrix theoretical design of a four-port network, and the judgment basis is as follows in detail:
the coupling bridge and the amplifier can be equivalent to a four-port network, and the transmission matrixes of the four-port network are respectively as follows:
the 90 ° coupling bridge matrix is:
the equivalent total matrix of the synthesis circuit can be obtained by multiplying the transmission matrixes of the transmission units.
Setting the radio frequency signal as:
whereinCorresponding to the power of the fundamental wave,corresponding to the second harmonic signal; ω corresponds to the period of the frequency,andthe initial phases of the fundamental and second harmonic signals, respectively.
As shown in fig. 4, when a certain input port of the load matching coupled four-port network is used, after a radio frequency signal enters the 90 ° electrical bridge through another output port, the radio frequency and the second harmonic signal output by the direct port are not changed and can be represented by formula (1), and the radio frequency and the second harmonic signal output by the coupled port are changed into formula (3):
the output signals of the straight-through end and the coupling end are transmitted to a mirror coupling four-port 90-degree electric bridge through an amplifying circuit, and the radio frequency and second harmonic signals of the output port 1 of the electric bridge are converted into a formula (4):
the radio frequency and second harmonic signals of the output port 2 become formula (5):
as can be seen from the formulas (1) to (5), compared with the conventional power dividing and synthesizing circuit, 3dB harmonic suppression can be theoretically achieved by using the 90 ° mirror coupling bridge, and infinite harmonic suppression can be theoretically achieved by using the 180 ° mirror coupling bridge.
With reference to fig. 3, the ultra-wideband solid-state power amplifier synthesis circuit of the present invention includes an th matching unit 1, a th four-port bridge network 2, a th power synthesis unit 3, a second power synthesis unit 4, a second four-port bridge network 5, and a second matching unit 6;
the th matching unit 1 receives the reflected microwave radio frequency signal through a th port 2B of the four-port bridge network, and performs 50 Ω matching on an isolation/coupling signal of the microwave radio frequency signal received by a th port 2A of the four-port bridge network and the reflected signals of the ports C and D according to functional requirements;
the four-port bridge network 2 receives an input microwave radio frequency signal through a port A, respectively outputs the input microwave radio frequency signal to the power synthesis unit 3 and the second power synthesis unit 4 through a port C and a port D through a 90 or 180-degree bridge network, and outputs an isolation/coupling signal of an input port A to the matching unit 1, wherein the phase difference of the signals output by the port C and the port D is 90 or 180 degrees;
the power synthesis unit 3 adopts paths of amplifiers or multi-path amplification synthesis networks, and the signal gain value of the power synthesis unit is set according to the power requirement, the power synthesis unit 3 receives the microwave radio frequency signal output by the four-port bridge network port 3C, performs linear or saturated amplification on the microwave radio frequency signal, and outputs the microwave radio frequency signal to the second four-port bridge network 5;
the second power synthesis unit 4 adopts paths of amplifiers or a multi-path amplification synthesis network, and the signal gain value of the second power synthesis unit 4 is set according to the power requirement, receives the microwave radio frequency signal output by the 3 port D of the four-port bridge network, performs linear or saturated amplification on the microwave radio frequency signal and outputs the microwave radio frequency signal to the second four-port bridge network 5;
the second four-port bridge network 5 receives output signals of the th power combining unit 3 and the second power combining unit 4 through a port D 'and a port C', respectively, wherein an output signal from the th four-port bridge network 2 port C is input to the second four-port bridge network 5 port D ', an output signal from the th four-port bridge network 2 port D is input to the second four-port bridge network 5 port C', the output signal is coupled and output through a 90 or 180 ° bridge network by using a mirror image reversible coupling bridge circuit, a microwave radio frequency signal is output to the second matching unit 6 through a port B, and the microwave radio frequency signal is directly output through a port a;
the second matching unit 6 receives the microwave radio frequency signal entering from the port B ' of the second four-port bridge network 5, and performs 50 Ω matching on the isolation/coupling signal of the microwave radio frequency signal reflected from the port a ' of the second four-port bridge network 5 and the incident signals of the ports C ' and D ' according to the functional requirements, thereby ensuring normal output of the port a ' of the second four-port bridge network 5.
, the ultra-wideband solid-state power amplifier synthesis circuit has a frequency range covering 6-18 GHz or wider bandwidth, theoretical 3dB second harmonic suppression can be realized by utilizing 90-degree electric bridge network combination, theoretical infinite second harmonic suppression can be realized by utilizing 90-degree electric bridge network combination, and higher synthesis efficiency can be realized by inhibiting levels of second harmonic and multiple harmonics.
, the four-port bridge network 2 and the second four-port bridge network 5 are used to form an amplification synthesis network of a low noise amplifier, a limiting amplifier and a power amplifier to realize corresponding harmonic suppression capability, and the corresponding matching unit 1 and the second matching unit 6 are used to select time matching according to the actual power and enhance the function selectivity.
, the ultra-wideband solid-state power amplifier synthesis circuit has reconfigurability, that is, the radio-frequency signals synthesized by the mirror coupling bridge network can be continuously synthesized two by two on the basis of the synthesis network, thereby realizing larger and more efficient power synthesis.
As shown in fig. 5, which is a schematic diagram of a 90 ° coupling bridge, a four-port coupling bridge receives a microwave signal through an input port 1, transmits a radio frequency signal to an output port 1 and an output port 2 through a coupling circuit, and combines the received microwave signal with another coupling bridge amplified by an amplifier to realize efficient signal synthesis.
The invention relates to a circuit design method for improving the synthesis efficiency of an ultra-wideband solid-state power amplifier, which adopts the suppression of harmonic signals of a power amplifier to achieve the purpose of improving the output power of main microwave signals. The invention applies the mirror coupling bridge circuit to the synthesis field of ultra wide band (typical frequency is 6-18 GHz) power amplifiers, and has the characteristics of simple circuit topology and design, simple and convenient manufacturing process, wide working frequency bandwidth, strong harmonic suppression capability and the like.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
- The ultra-wideband solid-state power amplifier synthesis circuit is characterized by comprising two four-port bridge networks arranged in a mirror image mode, wherein an input port B of a th four-port bridge network is connected to matching units, an input port A receives an input microwave signal, the signal is divided into a port C and a port D through the th four-port bridge network and is output, the two output signals are respectively amplified through a power synthesis unit in a step, the amplified microwave signal is input to an input port C 'and an input port D' of the second four-port bridge network, the output signal is coupled and output through the second four-port bridge network by using a mirror image reversible coupling bridge circuit, a port B 'of the second four-port bridge network outputs a radio-frequency signal to the matching units, and the port A' directly outputs the microwave radio-frequency signal.
- 2. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 1, wherein the th four-port bridge network realizes the coupling output of two output signals with a phase difference of 90 or 180 degrees, if the 90 degree coupling bridge network is adopted, the second harmonic signal of 3dB is suppressed, and if the 180 degree coupling bridge network is adopted, the second harmonic signal is completely suppressed.
- 3. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 1 or 2, characterized by comprising an th matching unit (1), a th four-port bridge network (2), a th power synthesis unit (3), a second power synthesis unit (4), a second four-port bridge network (5) and a second matching unit (6).
- 4. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 3, wherein the th matching unit (1) receives a microwave radio frequency signal of an input signal coupled through the th four-port bridge network (2) through the isolation port B, and simultaneously receives reflected signals of the port C and the port D, and performs 50 Ω matching.
- 5. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 3, wherein the th four-port bridge network (2) receives the input microwave RF signal through the port A, outputs the input microwave RF signal to the th power synthesis unit (3) and the second power synthesis unit (4) through the port C and the port D respectively through the 90 or 180 ° bridge network, and outputs the isolated/coupled signal of the input port A to the th matching unit (1) through the port B, wherein the phase difference between the signals output by the port C and the port D is 90 ° or 180 °.
- 6. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 3, wherein the th power synthesis unit (3) adopts amplifiers or multi-path amplification synthesis network, the signal gain value is set according to the power requirement, the th power synthesis unit (3) receives the microwave radio frequency signal output from port C of the th four-port bridge network (3), and performs linear or saturation amplification and outputs the microwave radio frequency signal to the second four-port bridge network (5);the second power synthesis unit (4) adopts an -path amplifier or a multi-path amplification synthesis network, the signal gain value of the second power synthesis unit is set according to the power requirement, and the second power synthesis unit (4) receives the microwave radio frequency signal output by the port D of the fourth port bridge network (3) and performs linear or saturated amplification on the microwave radio frequency signal to output to the second four-port bridge network (5).
- 7. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 3, wherein the second four-port bridge network (5) receives th power synthesis unit (3) and second power synthesis unit (4) output signals through a port D ' and a port C ', respectively, wherein an output signal from the th four-port bridge network (2) port C is input to the second four-port bridge network (5) port D ', an output signal from the th four-port bridge network (2) port D is input to the second four-port bridge network (5) port C ', and the output signal is coupled and output through a 90 or 180 ° bridge network by using a mirror image reversible coupling bridge circuit, and a microwave radio frequency signal is output to the second matching unit (6) through a port B ', and a microwave radio frequency signal is directly output through a port A.
- 8. The ultra-wideband solid-state power amplifier synthesis circuit according to claim 3, wherein the second matching unit (6) receives a microwave radio frequency signal entering from the port B ' of the second four-port bridge network (5), and performs 50 Ω matching on an isolation/coupling signal of the microwave radio frequency signal reflected from the port A ' of the second four-port bridge network (5) and incident signals of the ports C ' and D ' according to functional requirements, so as to ensure normal output of the port A ' of the second four-port bridge network (5).
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113572442A (en) * | 2021-05-24 | 2021-10-29 | 北京无线电测量研究所 | Single-balance absorption type amplitude limiter |
CN114171877A (en) * | 2021-12-07 | 2022-03-11 | 南京长峰航天电子科技有限公司 | Ku frequency band power synthesis module and assembling method thereof |
CN115378368A (en) * | 2022-10-26 | 2022-11-22 | 成都广众科技有限公司 | Ultra-wideband solid-state power amplifier |
CN117200719A (en) * | 2023-11-07 | 2023-12-08 | 成都四威功率电子科技有限公司 | Broadband high-power multi-frequency amplifying system and working method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102868367A (en) * | 2012-10-18 | 2013-01-09 | 中国科学院上海微系统与信息技术研究所 | Double balanced type frequency tripler |
JP2013135304A (en) * | 2011-12-26 | 2013-07-08 | Mitsubishi Electric Corp | Balanced wideband amplifier |
US20140375389A1 (en) * | 2013-06-25 | 2014-12-25 | Rf Micro Devices, Inc. | Multi-broadband doherty power amplifier |
EP3096453A1 (en) * | 2015-05-20 | 2016-11-23 | MediaTek, Inc | 0/90 degree coupler with complex termination |
-
2019
- 2019-11-10 CN CN201911091482.5A patent/CN110739922A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013135304A (en) * | 2011-12-26 | 2013-07-08 | Mitsubishi Electric Corp | Balanced wideband amplifier |
CN102868367A (en) * | 2012-10-18 | 2013-01-09 | 中国科学院上海微系统与信息技术研究所 | Double balanced type frequency tripler |
US20140375389A1 (en) * | 2013-06-25 | 2014-12-25 | Rf Micro Devices, Inc. | Multi-broadband doherty power amplifier |
EP3096453A1 (en) * | 2015-05-20 | 2016-11-23 | MediaTek, Inc | 0/90 degree coupler with complex termination |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113572442A (en) * | 2021-05-24 | 2021-10-29 | 北京无线电测量研究所 | Single-balance absorption type amplitude limiter |
CN113572442B (en) * | 2021-05-24 | 2023-11-28 | 北京无线电测量研究所 | Single-balance absorption type limiter |
CN114171877A (en) * | 2021-12-07 | 2022-03-11 | 南京长峰航天电子科技有限公司 | Ku frequency band power synthesis module and assembling method thereof |
CN115378368A (en) * | 2022-10-26 | 2022-11-22 | 成都广众科技有限公司 | Ultra-wideband solid-state power amplifier |
CN115378368B (en) * | 2022-10-26 | 2023-03-21 | 成都广众科技有限公司 | Ultra-wideband solid-state power amplifier |
CN117200719A (en) * | 2023-11-07 | 2023-12-08 | 成都四威功率电子科技有限公司 | Broadband high-power multi-frequency amplifying system and working method |
CN117200719B (en) * | 2023-11-07 | 2024-02-02 | 成都四威功率电子科技有限公司 | Broadband high-power multi-frequency amplifying system and working method |
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