CN117394805A - Multi-stage monolithic microwave integrated circuit power amplifier - Google Patents
Multi-stage monolithic microwave integrated circuit power amplifier Download PDFInfo
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- CN117394805A CN117394805A CN202210794584.9A CN202210794584A CN117394805A CN 117394805 A CN117394805 A CN 117394805A CN 202210794584 A CN202210794584 A CN 202210794584A CN 117394805 A CN117394805 A CN 117394805A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention provides a multistage monolithic microwave integrated circuit power amplifier, comprising: a radio frequency input for receiving a radio frequency signal; the amplifying circuit module comprises at least two transistor amplifying circuit sub-modules which are connected in cascade and is used for carrying out cascade amplification and transmission of power on radio frequency signals; the output port of the bias filter circuit is connected with the gate voltage input end and the drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, and is used for providing the gate voltage and the drain voltage for each stage of transistor amplifying circuit sub-module of the amplifying circuit module as static working points and inhibiting the signal gain outside the working frequency band of the amplifying circuit module through the filter network; the radio frequency output end is connected with the output end of the amplifying circuit sub-module of the final transistor of the amplifying circuit module and is used for outputting the radio frequency signal amplified by the amplifying circuit module. The technical scheme of the invention can improve the out-of-band stability of the multistage MMIC power amplifier.
Description
Technical Field
The invention relates to the technical field of radio frequency power amplifiers, in particular to a multistage monolithic microwave integrated circuit power amplifier.
Background
Monolithic microwave integrated circuit (Monolithic Microwave Integrated Circuit, MMIC) technology plays an important role in millimeter wave circuit design. The power amplifier is used as a radio frequency front-end module in a wireless communication system, and plays a decisive role in the communication performance of the whole communication system. With the increasing demands of millimeter waves in the communication fields of 5G communication, satellite communication and the like, the working frequency of a wireless communication system is promoted to be gradually expanded to a Ku frequency band and a Ka frequency band, and therefore higher requirements are put on the performance of a power amplifier.
The multistage MMIC power amplifier can solve the requirement of higher gain of a millimeter wave circuit, but also provides the requirement of full-band stability for the multistage MMIC power amplifier. In order to obtain the gain characteristic of the transistor as much as possible, the current multi-stage MMIC power amplifier generally only can ensure that each stage of transistor is stable in the working frequency band, but cannot realize the stability of the whole frequency band, and is easy to generate unstable states outside the working frequency band.
Disclosure of Invention
The invention provides a multistage monolithic microwave integrated circuit power amplifier which is used for solving the defect that the multistage MMIC power amplifier in the prior art is easy to cause unstable outside the working frequency band so as to improve the out-of-band stability of the multistage MMIC power amplifier.
The invention provides a multistage monolithic microwave integrated circuit power amplifier, comprising:
the radio frequency input end is used for receiving radio frequency signals;
the amplifying circuit module comprises at least two transistor amplifying circuit sub-modules which are connected in cascade, wherein the input end of a first-stage transistor amplifying circuit sub-module of the amplifying circuit module is connected with the radio frequency input end, and the amplifying circuit module is used for carrying out cascade amplification and transmission on power of the radio frequency signal;
the output port of the bias filter circuit is connected with the gate voltage input end and the drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, and the bias filter circuit is used for providing the gate voltage and the drain voltage for each stage of transistor amplifying circuit sub-module of the amplifying circuit module as static working points and inhibiting the signal gain outside the working frequency band of the amplifying circuit module through a filter network of the bias filter circuit;
the radio frequency output end is connected with the output end of the amplifying circuit sub-module of the final transistor of the amplifying circuit module and is used for outputting radio frequency signals amplified by the amplifying circuit module.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, the bias filter circuit comprises at least one grid power supply circuit and at least one drain power supply circuit, the number of the grid power supply circuits is determined based on the number of grid voltage power supply ends of the amplifying circuit module, the number of the drain power supply circuits is determined based on the number of drain voltage power supply ends of the amplifying circuit module, and the grid power supply circuits and the drain power supply circuits comprise filter networks;
Each stage of transistor amplifying circuit submodule of the amplifying circuit module comprises a grid voltage power supply end and at least one drain voltage power supply end, and all grid voltage power supply ends of the amplifying circuit module are connected with the same grid power supply circuit or the grid voltage power supply ends of each stage of transistor amplifying circuit submodule of the amplifying circuit module are respectively connected with one grid power supply circuit; each drain voltage supply end of each transistor amplifying circuit sub-module of the amplifying circuit module is connected with one drain power supply circuit;
the grid power supply circuit is used for providing the grid voltage, the drain power supply circuit is used for providing the drain voltage, the grid power supply circuit and the drain power supply circuit jointly determine the static working point of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, and the filtering network is used for inhibiting the signal gain outside the working frequency band of the amplifying circuit module.
The invention provides a multistage monolithic microwave integrated circuit power amplifier, which comprises a drain power supply circuit, a first power supply terminal, a drain voltage output terminal, a first filter resistor, a first filter capacitor, a second filter resistor, a second filter capacitor, a first passive microstrip line, a third filter capacitor and an isolation inductor, wherein the drain power supply circuit comprises a first power supply terminal, a drain voltage output terminal, a first filter resistor, a first filter capacitor, a second filter resistor, a second filter capacitor, a first passive microstrip line, a third filter capacitor and an isolation inductor;
The first power supply end is used for being connected with a first direct current voltage source;
one end of the first filter resistor is connected with the first power supply end, and the other end of the first filter resistor is connected with the first filter capacitor in series and then grounded to form a first filter network;
after the second filter resistor, the second filter capacitor and the first passive microstrip line are connected in parallel, one end of the second filter resistor, the second filter capacitor and the first passive microstrip line are connected with the first power supply end, and the other end of the second filter resistor, the second filter capacitor and the first passive microstrip line are connected with the first end of the isolation inductor to form a second filter network;
the first end of the isolation inductor is grounded through the third filter capacitor, and the second end of the isolation inductor is connected with the drain voltage output end;
the drain voltage output end is used as one terminal of the output port of the bias filter circuit and is connected with the drain voltage power supply end.
The invention provides a multistage monolithic microwave integrated circuit power amplifier, wherein a grid power supply circuit comprises a second power supply end, a grid voltage output end, a third filter resistor, a fourth filter capacitor, a fifth filter capacitor and a second passive microstrip line;
the second power supply end is used for being connected with a second direct-current voltage source;
one end of the third filter resistor is connected with the second power supply end, and the other end of the third filter resistor is connected with the fourth filter capacitor in series and then grounded to form a third filter network;
After the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected in parallel, one end of the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected with the second power supply end, and the other end of the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected with the grid voltage output end to form a fourth filter network;
the grid voltage output end is used as one terminal of the output port of the bias filter circuit and is connected with the grid voltage power supply end.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, the voltage of the voltage source used by the grid power supply circuit and the voltage source used by the drain power supply circuit are different.
The invention provides a multistage monolithic microwave integrated circuit power amplifier, wherein a first-stage transistor amplifying circuit submodule of an amplifying circuit module comprises an input matching circuit, a first-stage transistor amplifying unit circuit and a first inter-stage matching circuit;
the input matching circuit comprises a first input end and a first output end, the first input end is connected with the radio frequency input end, the first output end is connected with the input end of the first-stage transistor amplifying unit circuit, and the input matching circuit is used for matching the impedance of a signal source for transmitting the radio frequency signal with the input impedance of the first-stage transistor amplifying circuit sub-module and superposing a positive slope frequency response curve for the radio frequency signal received by the radio frequency input end;
The first-stage transistor amplifying unit circuit is used for performing first-stage amplification on the radio frequency signal input by the radio frequency input end;
the input end of the first inter-stage matching circuit is connected with the output end of the first-stage transistor amplifying unit circuit, and the first inter-stage matching circuit is used for carrying out impedance matching on the first-stage transistor amplifying unit circuit and a sub-module of a transistor amplifying circuit of a next stage of the sub-module of the first-stage transistor amplifying circuit.
The invention provides a multistage monolithic microwave integrated circuit power amplifier, wherein an input matching circuit comprises a matching inductance, a matching resistor, a first matching capacitor, a second matching capacitor, a third passive microstrip line and a fourth passive microstrip line;
one end of the matching inductor is connected with the radio frequency input end, and the other end of the matching inductor is grounded;
and after being connected in parallel, one end of the matching resistor, the first matching capacitor and the third passive microstrip line is connected with the radio frequency input end, and the other end of the matching resistor, the second matching capacitor and the fourth passive microstrip line are connected in series and then are connected with the input end of the first-stage transistor amplifying unit circuit.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, a final transistor amplifying circuit submodule of the amplifying circuit module comprises a final transistor amplifying unit circuit and an output power coupling circuit;
The input end of the final-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module, and the final-stage transistor amplifying unit circuit is used for amplifying signals output by the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module;
the output power coupling circuit comprises a coupling input end and a coupling output end, wherein the coupling input end is connected with the output end of the final-stage transistor amplifying unit circuit, the coupling output end is connected with the radio-frequency output end, and the output power coupling circuit is used for converting the load impedance of a rear-end load connected with the radio-frequency output end into matching with the output impedance of the final-stage transistor amplifying unit circuit and coupling signals output by the final-stage transistor amplifying unit circuit to the radio-frequency output end.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, the intermediate stage transistor amplifying circuit submodule of the amplifying circuit module comprises an intermediate stage transistor amplifying unit circuit and an intermediate stage interstage matching circuit;
the input end of the intermediate-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the intermediate-stage transistor amplifying circuit sub-module, and the intermediate-stage transistor amplifying unit circuit is used for amplifying signals output by the previous-stage transistor amplifying circuit sub-module of the intermediate-stage transistor amplifying circuit sub-module;
The intermediate stage interstage matching circuit is used for carrying out impedance matching on the intermediate stage transistor amplifying unit circuit and a next stage transistor amplifying circuit submodule of the intermediate stage transistor amplifying circuit submodule.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, each transistor amplifying unit circuit comprises at least one transistor, and the number of the at least one transistor is determined based on the target output power of the amplifying circuit module.
According to the multistage monolithic microwave integrated circuit power amplifier provided by the invention, the bias filter circuit is arranged at the periphery of the amplifying circuit module, the bias filter output port of the bias filter circuit is connected with the gate voltage input end and the drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, so that the gate voltage and the drain voltage can be provided for each stage of transistor amplifying circuit sub-module of the amplifying circuit module as static working points, the signal gain outside the working frequency band of the amplifying circuit module is suppressed through the filter network in the bias filter circuit, the burst gain outside the working frequency band of the amplifying circuit module can be lost, and the out-of-band stability of the multistage MMIC power amplifier is improved.
Drawings
In order to more clearly illustrate the invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of an MMIC power amplifier according to the present invention;
fig. 2 is a schematic diagram of a drain power supply circuit according to the present invention;
FIG. 3 is a schematic diagram of a gate power circuit according to the present invention;
fig. 4 is a schematic structural diagram of a first stage transistor amplifying circuit sub-module of the amplifying circuit module provided by the present invention;
FIG. 5 is a schematic diagram of an input matching circuit according to the present invention;
fig. 6 is a schematic diagram of the structure of a final transistor amplifying circuit sub-block of the amplifying circuit block provided by the present invention;
FIG. 7 is a schematic diagram of an output power coupling circuit according to the present invention;
FIG. 8 is a second schematic diagram of a multi-stage MMIC power amplifier according to the present invention;
FIG. 9 is a schematic diagram of a gain variation curve within the operating band of a multi-stage MMIC power amplifier provided by the present invention;
Fig. 10 is a schematic diagram of a gain variation curve outside the operating frequency band of the multistage MMIC power amplifier provided by the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In millimeter wave circuit design, active elements and passive elements can be integrated together on a dielectric substrate through a semiconductor process to form a millimeter wave circuit with stable structure, high reliability and long service life. The SUB-6GHz is electromagnetic wave with frequency lower than 6GHz, along with exhaustion of sub_6G frequency spectrum resources, development requirements for 5G communication and satellite communication are continuously increased, the working frequency of a wireless communication system is promoted to be gradually expanded to a Ku frequency band and a Ka frequency band, and a communication device with wide frequency band, miniaturization, high capacity and high speed is designed. The Ku band is a band having a frequency lower than the K band under the IEEE 521-2002 standard, and the Ka band is a band higher than the K band.
The power amplifier is used as a radio frequency front-end module in wireless communication, and has decisive effect on the wireless communication performance of the whole system. The research on the power amplifier in the related art is mainly focused on the aspects of high efficiency, high power, large bandwidth and the like, and is influenced by the inherent characteristics of the transistor, the maximum obtainable gain of the power amplifier depends on the increase of frequency to show a descending trend, so that the gain flatness is poor in a wider working frequency band, the power and efficiency fluctuation of the amplifying device is increased in a wide frequency band range, and the performance index of the whole system is influenced.
The multistage power amplifier can adapt to the demands of millimeter wave circuits for various gains and higher gains, but the unstable generation of the power amplifier is induced by the changes of design, processing and testing environments, and the like, and the multistage power amplifier needs to ensure that all stages of amplifiers reach unconditional stable states in the full frequency band, so that how to design the globally stable power amplifier becomes the key point of research. In the related art, in the design of a multi-stage power amplifier, in order to obtain the gain characteristics of the transistor itself as much as possible, it is generally only guaranteed that each stage of transistor is stable in the operating frequency band, so that the stability of the full frequency band cannot be achieved. For a multistage cascade amplifier, according to the gain characteristics of the transistor itself, the gain is very high in the low frequency band, and as the frequency increases, the gain decreases. Through multistage amplifier cascading in the operating frequency band, if the output matching network, the input matching network and the interstage matching network are not frequency selective, the signals inside and outside the transistor pair band can pass through, and then the ideal low-frequency gain of the cascading transistors can be large. If the output matching network, the input matching network, the inter-stage matching network and the like have frequency selectivity, the gain loss is smaller when the signals in the working frequency band pass through, the passing performance is good, the out-of-band gain is difficult to be well inhibited although the out-of-band gain is inhibited, and the situation that the gain of some low-frequency signals is still high, namely, the situation that some frequency bands outside the working frequency band are unstable, can occur.
Based on the above, the embodiment of the invention provides a multi-stage Monolithic Microwave Integrated Circuit (MMIC) power amplifier, wherein a bias filter circuit is arranged at the periphery of an amplifying circuit module comprising at least two transistor amplifying circuit sub-modules which are connected in cascade, a bias filter output port of the bias filter circuit is connected with a gate voltage input end and a drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, the gate voltage and the drain voltage are provided for each stage of transistor amplifying circuit sub-module of the amplifying circuit module as static working points, and signal gain outside the working frequency band of the amplifying circuit module is suppressed through a filter network in the bias filter circuit.
The MMIC power amplifier of the present invention is described below in connection with fig. 1-10.
Fig. 1 schematically illustrates one of schematic structural diagrams of an MMIC power amplifier according to an embodiment of the present invention, and referring to fig. 1, the MMIC power amplifier may include a radio frequency input terminal IN, an amplifying circuit module 10, a bias filter circuit 20, and a radio frequency output terminal OUT. Wherein: the radio frequency input end IN is used for receiving radio frequency signals; the amplifying circuit module 10 comprises at least two transistor amplifying circuit sub-modules connected IN cascade, the input end of the first-stage transistor amplifying circuit sub-module of the amplifying circuit module 10 is connected with the radio frequency input end IN, and the amplifying circuit module 10 is used for carrying out cascade amplification and transmission of power on radio frequency signals received by the radio frequency input end IN; the output port D of the bias filter circuit 20 is connected with the gate voltage input end A1 and the drain voltage input end B1 of each stage of transistor amplifying circuit sub-module of the amplifying circuit module 10, and the bias filter circuit 20 is used for providing the gate voltage and the drain voltage for each stage of transistor amplifying circuit sub-module of the amplifying circuit module 10 as static working points and suppressing the signal gain outside the working frequency band of the amplifying circuit module 10 through a filter network thereof; the radio frequency output end OUT is connected with the output end of the amplifying circuit sub-module of the final transistor of the amplifying circuit module 10 and is used for outputting radio frequency signals amplified by the amplifying circuit module 10.
According to the MMIC power amplifier provided by the embodiment of the invention, the bias filter circuit is arranged at the periphery of the amplifying circuit module, the bias filter output port of the bias filter circuit is connected with the gate voltage input end and the drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, so that the gate voltage, the drain voltage and the static working point can be provided for each stage of transistor amplifying circuit sub-module of the amplifying circuit module, abrupt change signals outside the working frequency band of the amplifying circuit module are filtered through the bias filter circuit, the burst gain outside the working frequency band of the amplifying circuit module can be lost, and the out-of-band stability of the multistage MMIC power amplifier is improved.
Based on the multi-stage MMIC power amplifier of the corresponding embodiment of fig. 1, in one example embodiment, the bias filter circuit 20 may include at least one gate power supply circuit and at least one drain power supply circuit including a filter network therein; the gate power supply circuit is used for providing a gate voltage, the drain power supply circuit is used for providing a drain voltage, the gate power supply circuit and the drain power supply circuit jointly determine a static working point of each stage of transistor amplifying circuit sub-module of the amplifying circuit module 10, and the filtering network is used for suppressing signal gain outside the working frequency band of the amplifying circuit module 10. The number of the gate power supply circuits may be determined based on the number of the gate voltage supply terminals of the amplifying circuit module 10, and the number of the drain power supply circuits may be determined based on the number of the drain voltage supply terminals of the amplifying circuit module 10. Illustratively, each transistor amplifying circuit sub-block of the amplifying circuit block 10 may include one gate voltage supply terminal and at least one drain voltage supply terminal, all gate voltage supply terminals of the amplifying circuit block 10 may be connected to the same gate power supply circuit, and each drain voltage supply terminal of each transistor amplifying circuit sub-block of the amplifying circuit block 10 is connected to one drain power supply circuit, in which case the bias filter circuit 20 may include one gate power supply circuit and the same number of drain power supply circuits as the total number of drain voltage supply terminals in the amplifying circuit block 10. For example, the gate voltage supply terminals of the transistor amplifying circuit sub-blocks of each stage of the amplifying circuit module 10 may be respectively connected to one gate power supply circuit, and each drain voltage supply terminal of each stage of the transistor amplifying circuit sub-block is connected to one drain power supply circuit, for example, the amplifying circuit module 10 includes a three-stage transistor amplifying circuit sub-block, and each stage of the transistor amplifying circuit sub-block includes one gate voltage supply terminal and two drain voltage supply terminals, in which case, the bias filter circuit 20 may include 3 gate power supply circuits and 6 drain power supply circuits.
Fig. 2 schematically illustrates a structure of a drain power supply circuit according to an embodiment of the present invention, and referring to fig. 2, the drain power supply circuit may include a first power supply terminal U1, a drain voltage output terminal V1, a first resistor R1, a first filter capacitor C1, a second filter resistor R2, a second filter capacitor C2, a first passive microstrip line W1, a third filter capacitor C3, and an isolation inductor L1. The first filter resistor R1 and the second filter resistor R2 may be Metal film resistors, the first capacitor C1 and the second capacitor C2 may be Metal-Insulator-Metal (MIM) capacitors, and the isolation inductor L1 may be an on-chip inductor. The first power supply end U1 is used for being connected with a first direct-current voltage source, and the first direct-current voltage source provides a first voltage signal; one end of the first filter resistor R1 is connected with the first power supply end U1, and the other end of the first filter resistor R1 is connected with the first filter capacitor C1 in series and then grounded to form a first filter network; after the second filter resistor R2, the second filter capacitor C2 and the first passive microstrip line W1 are connected in parallel, one end of the second filter resistor R2, the second filter capacitor C2 and the first passive microstrip line W1 are connected with the first power supply end U1, the other end of the second filter resistor R2, the second filter capacitor C2 and the first passive microstrip line W1 are connected with the first end of the isolation inductor L1 to form a second filter network, and the parallel second filter resistor R2, the second filter capacitor C2 and the first passive microstrip line W1 can be equivalent to a power consumption RLC circuit; the first end of the isolation inductor L1 is grounded through a third capacitor, and the second end of the isolation inductor L1 is connected with the drain voltage output end V1; the drain voltage output terminal V1 is connected to the drain voltage supply terminal of the amplifier circuit module 10 as one terminal of the output port D of the bias filter circuit 20.
Fig. 3 is a schematic structural diagram of a gate power supply circuit according to an embodiment of the present invention, and referring to fig. 3, the gate power supply circuit includes a second power supply terminal U2, a gate voltage output terminal V2, a third filter resistor R3, a fourth filter resistor R4, a fourth filter capacitor C4, a fifth filter capacitor C5, and a second passive microstrip line W2. The third filter resistor R3 and the fourth filter resistor R4 may be metal film resistors, and the fourth filter capacitor C4 and the fifth filter capacitor C5 may be MIM capacitors. The second power supply end U2 is used for being connected with a second direct-current voltage source, and a second voltage signal is provided by the second direct-current voltage source; one end of the third filter resistor R3 is connected with the second power supply end U2, and the other end of the third filter resistor R3 is connected with the fourth filter capacitor C4 in series and then grounded to form a third filter network; after the fourth filter resistor R4, the fifth filter capacitor C5 and the second passive microstrip line W2 are connected in parallel, one end of the fourth filter resistor R4, the fifth filter capacitor C5 and the second passive microstrip line W2 are connected with the second power supply end U2, the other end of the fourth filter resistor R4, the fifth filter capacitor C5 and the second passive microstrip line W2 are connected with the grid voltage output end V2 to form a fourth filter network, and the fourth filter resistor R4, the fifth filter capacitor C5 and the second passive microstrip line W2 which are connected in parallel can be equivalent to a consumed RLC circuit; the gate voltage output terminal V2 is connected to a gate voltage supply terminal of the amplifier circuit module 10 as one terminal of the output port of the bias filter circuit 20.
Based on fig. 2 and 3, the first power supply end U1 of the gate power supply circuit is used for being connected with a first direct current voltage source, the second power supply end U2 of the drain power supply circuit is used for being connected with a second direct current voltage source, the first direct current voltage source and the second direct current voltage source are two different power supplies, and two different voltage signals can be provided. The bias filter circuit 20 supplies the same gate voltage to all gate voltage inputs of the amplifying circuit module 10 through the gate power supply circuit, and supplies the same drain voltage to all drain voltage inputs of the amplifying circuit module 10 through the drain power supply circuit.
Based on the multi-stage MMIC power amplifier of the corresponding embodiment of fig. 1, in an exemplary embodiment, fig. 4 schematically illustrates a structure of a first stage transistor amplifying circuit sub-module of an amplifying circuit module provided by the embodiment of the present invention, and referring to fig. 4, an input matching circuit, a first stage transistor amplifying unit circuit and a first inter-stage matching circuit may be included in the first stage transistor amplifying circuit sub-module of the amplifying circuit module. The input matching circuit comprises a first input end E1 and a first output end E2, wherein the first input end E1 is connected with a radio frequency input end IN, the first output end E2 is connected with an input end E3 of the first-stage transistor amplifying unit circuit, and the input matching circuit is used for matching the impedance of a signal source for transmitting radio frequency signals with the input impedance of a first-stage transistor amplifying circuit sub-module and superposing a positive slope frequency response curve for the radio frequency signals received by the radio frequency input end IN. The first-stage transistor amplifying unit circuit is used for performing first-stage amplification on the radio frequency signal input by the radio frequency input end IN. The input end E5 of the first inter-stage matching circuit is connected with the output end E4 of the first-stage transistor amplifying unit circuit, the output end E6 is connected with the input end of the next-stage transistor amplifying circuit sub-module of the first-stage transistor amplifying circuit sub-module, and the first inter-stage matching circuit is used for carrying out impedance matching on the first-stage transistor amplifying unit circuit and the next-stage transistor amplifying circuit sub-module of the first-stage transistor amplifying circuit sub-module.
Based on the first stage transistor amplifying circuit sub-module of the corresponding embodiment of fig. 4, fig. 5 schematically illustrates a structural schematic diagram of the input matching circuit provided by the embodiment of the present invention, and referring to fig. 5, the input matching circuit includes a matching inductance L2, a matching resistor R5, a first matching capacitor C6, a second matching capacitor C7, a third passive microstrip line W3, and a fourth passive microstrip line W4. The matching resistor R5 may be a metal film resistor, the first matching capacitor C6 and the second matching capacitor C7 may be MIM capacitors, and the matching inductor L2 may be an on-chip inductor. One end of the matching inductor L2 is connected with the radio frequency input end IN, and the other end of the matching inductor L is grounded, so that static electricity can be prevented; after being connected IN parallel, the matching resistor R5, the first matching capacitor C6 and the third passive microstrip line W3 are connected with one end of the radio frequency input end IN, and the other end of the matching resistor R is connected with the second matching capacitor C7 and the fourth passive microstrip line W4 IN series and then is connected with the output end E2 of the input matching circuit, and the matching resistor R5, the first matching capacitor C6 and the third passive microstrip line W3 are connected with the input end E3 of the first-stage transistor amplifying unit circuit through the output end E2. The input matching circuit can convert the 50 ohm impedance of the input source impedance into the input port of the first-stage transistor amplifying unit circuit, provides the impedance required by the first-stage transistor amplifying unit circuit and realizes the input impedance matching. Meanwhile, the matching resistor R5 and the first matching capacitor C6 may form an integrating circuit network, and generate a positive slope frequency response curve to be superimposed on the radio frequency signal received by the radio frequency input terminal IN, so as to ensure that the gain of the amplifying circuit module 10 tends to be flat IN the whole working frequency band. The third passive microstrip line W3, the first matching capacitor C6 and the matching resistor R5 are connected in parallel, which can be equivalent to a lossy RLC circuit.
Based on the multistage MMIC power amplifier of the corresponding embodiment of fig. 1, in an exemplary embodiment, fig. 6 schematically illustrates a schematic structure of a final stage transistor amplification circuit sub-block of an amplification circuit block provided by an embodiment of the present invention, and referring to fig. 6, the final stage transistor amplification circuit sub-block may include a final stage transistor amplification unit circuit and an output power coupling circuit. The input end F1 of the final-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module, and the final-stage transistor amplifying unit circuit is used for amplifying signals output by the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module; the output power coupling circuit comprises a coupling input end F3 and a coupling output end F4, wherein the coupling input end F3 is connected with the output end F2 of the final-stage transistor amplifying unit circuit, the coupling output end F4 is connected with the radio-frequency output end OUT, and the output power coupling circuit is used for converting the load impedance of a rear-end load connected with the radio-frequency output end OUT into matching with the output impedance of the final-stage transistor amplifying unit circuit and coupling signals output by the final-stage transistor amplifying unit circuit to the radio-frequency output end.
The output power coupling circuit may be implemented based on passive microstrip lines, MIM capacitors, and the like, for example. For example, fig. 7 schematically illustrates a structural schematic diagram of an output power coupling circuit provided in an embodiment of the present invention, and referring to fig. 7, an example is shown in which a final stage transistor amplifying unit circuit includes four transistors, drain ends of the four transistors are a1, a2, a3 and a4, respectively, a section line coverage area represents a passive microstrip line, and drain ends a1 and a2, a3 and a4 can be respectively coupled and synthesized by different passive microstrip lines, and a coupling and synthesizing result is again coupled and synthesized by a wider passive microstrip line, and a final coupling and synthesizing result is output by a radio frequency output terminal OUT. In fig. 7, the portion of the dashed circle 71 represents the ground terminal, the portion of the dashed circle 72 may be equivalently an inductance series capacitor and then grounded, wherein the ellipse 721 represents the capacitor, which may be a MIM capacitor, and the capacitor may be grounded through an on-chip via, and the inductance may be replaced by a passive microstrip line in the lateral direction in the dashed circle 72.
Based on fig. 7, in the circuit design, the microstrip line used in the output power coupling circuit can be as wide as possible to reduce additional power dissipation, so that on one hand, the requirement of realizing lower insertion loss can be met, and on the other hand, sufficient current carrying capacity can be provided to prevent the chip from being burnt due to excessive current brought by high power output.
Based on the multi-stage MMIC power amplifier of the corresponding embodiment of fig. 1, in one example embodiment, the mid-stage transistor amplification circuit sub-block of the amplification circuit block 10 may include a mid-stage transistor amplification unit circuit and a mid-stage inter-stage matching circuit. The input end of the intermediate-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the intermediate-stage transistor amplifying circuit sub-module, and the intermediate-stage transistor amplifying unit circuit is used for amplifying the signal output by the previous-stage transistor amplifying circuit sub-module of the current intermediate-stage transistor amplifying circuit sub-module; the intermediate stage inter-stage matching circuit is used for performing impedance matching on the intermediate stage transistor amplifying unit circuit and a next stage transistor amplifying circuit submodule of the current intermediate stage transistor amplifying circuit submodule.
Based on the above embodiments, at least one transistor is included in the transistor amplifying unit circuit in each stage of the transistor amplifying circuit sub-module of the amplifying circuit module 10, and the number and size of the included transistors may be determined based on the target output power of the amplifying circuit module 10. For example, a amplifying circuit module 10 is designed, in which a three-stage transistor amplifying circuit sub-module is connected in series, and according to the target output power, a first-stage transistor amplifying circuit sub-module can be designed to include 1 transistor, a second-stage transistor amplifying circuit sub-module includes 2 transistors, and a third-stage transistor amplifying circuit sub-module includes 4 transistors.
Based on the content of the corresponding embodiments of fig. 1 to fig. 7, the following takes an example of an amplifying circuit module including three transistor amplifying circuit sub-modules connected in cascade, and the multistage MMIC power amplifier provided by the embodiment of the present invention is further illustrated with reference to fig. 8.
Fig. 8 illustrates a second schematic structural diagram of a multistage MMIC power amplifier according to an embodiment of the present invention, and referring to fig. 8, an amplifying circuit module of the multistage MMIC power amplifier includes a transistor amplifying circuit sub-module in three stages of cascade connection, which can perform multistage cascade amplification on a radio frequency signal, and the number and size of transistors disposed in each stage of transistor amplifying circuit sub-module can be selected according to a target output power. Specifically, the first-stage transistor amplifying circuit submodule includes an input matching circuit 811, a first-stage transistor amplifying unit circuit 812 and a first inter-stage matching circuit 813, where the first-stage transistor amplifying unit circuit 812 includes a transistor G1, and the transistor G1 may be, for example, a transistor of 4×50 μm, and the first-stage transistor amplifying unit circuit 812 may perform first-stage amplification on the radio frequency signal received by the radio frequency input terminal IN; the second-stage transistor amplifying circuit sub-module comprises a second-stage transistor amplifying unit circuit 821 and a second inter-stage matching circuit 822, wherein the second-stage transistor amplifying unit circuit 821 comprises a transistor G2 and a transistor G3 which are connected in parallel, for example, a transistor of 4 multiplied by 50 mu m can be adopted, and the second-stage transistor amplifying unit circuit 821 can carry out second-stage amplification on the radio frequency signal amplified by the first stage; the third-stage transistor amplifying circuit submodule comprises a third-stage transistor amplifying unit circuit 831 and an output power coupling circuit 832, wherein the third-stage transistor amplifying unit circuit 831 comprises four transistors which are connected in parallel, namely a transistor G4, a transistor G5, a transistor G6 and a transistor G7, the four transistors can be, for example, 4 multiplied by 75 mu m transistors, and the third-stage transistor amplifying unit circuit 831 can perform third-stage amplification on the radio frequency signal after the second-stage amplification. For each stage of transistor amplifying unit circuit, an RC parallel network is arranged at the position, close to the grid electrode, of the transistor, for example, the RC parallel network formed by the resistor R and the inductor C in the first stage of transistor amplifying unit circuit 812 can ensure the stability of the MMIC power amplifier in the working frequency band.
The first inter-stage matching circuit 813 and the second inter-stage matching circuit 822 are designed by passive devices, and may include an on-chip microstrip line, an MIM capacitor, an on-chip inductor, and the like, and the on-chip inductor may be replaced by the on-chip microstrip line. In the design process, the insertion loss can be reduced as much as possible and the matching bandwidth as much as possible can be obtained by adjusting the bandwidth of the microstrip line, the MIM capacitor, the on-chip inductor and the like, so that the overall gain of the multistage MMIC power amplifier is improved. The first inter-stage matching circuit 813 may bias the power supply access points of the output of the transistor G1 and the gate inputs of the transistors G2, G3 in the second stage transistor amplification unit circuit 821, to achieve impedance matching between the first stage transistor amplification unit circuit 812 and the second stage transistor amplification unit circuit 821. The second inter-stage matching circuit 822 may bias the power supply access points of the outputs of the transistors G2, G3 and the gate inputs of the four transistors in the third-stage transistor amplification unit circuit 831, achieving impedance matching between the second-stage transistor amplification unit circuit 821 and the third-stage transistor amplification unit circuit 831.
The output power coupling circuit 832 may be implemented by passive microstrip line, MIM capacitor, inductor, etc., and the inductor may also be implemented by passive microstrip line. In circuit design, the width of the passive microstrip line used by the output power coupling circuit 832 may be designed as wide as possible to reduce additional power dissipation, meet the requirements of lower insertion loss and provide sufficient current carrying capability to prevent burning out of the chip due to excessive current from high power output. The output power coupling circuit 832 can convert the 50 ohm pass impedance of the rear load connected to the radio frequency output terminal OUT into the output impedance required at the output port face of the third transistor amplifying unit circuit 831, so as to realize the matching of the output impedance. Meanwhile, the output power coupling circuit 832 can couple the output powers of the four transistors in the third-stage transistor amplifying unit circuit 831 in pairs, and the coupled two paths of signals are coupled again and transmitted to the radio frequency output end OUT for output, so that the power synthesis and the power output of the radio frequency signals amplified by the third-stage transistor amplifying unit circuit 831 are realized. The output power coupling circuit 832 may transmit the drain voltage output from the drain power supply circuit 844 to the drain terminal of the transistor G5, and may transmit the drain voltage output from the drain power supply circuit 843 to the drain terminal of the transistor G6, providing a bias access point for the third stage transistor amplifying cell circuit 831, i.e., providing the drain voltage.
The MMIC power amplifier is designed with 5 drain power supply circuits and 1 grid power supply circuit to form a bias filter circuit. A drain voltage output terminal of the drain power supply circuit 841 is connected to a drain terminal of the transistor G1, and provides a drain voltage for the transistor G1; the drain terminals of the transistors G3 and G2 are used as two drain voltage supply terminals of the second-stage transistor amplifying unit circuit 821, and are respectively connected with drain voltage output terminals of the drain power supply circuit 842 and the drain power supply circuit 845, and the drain power supply circuit 842 and the drain power supply circuit 845 provide drain voltages; the drain voltage output terminal of the drain power supply circuit 844 is connected to the drain terminal of the transistor G4, and provides a drain voltage for the transistor G4 and a drain voltage for the transistor G5 through the output power coupling circuit 832; the drain voltage output terminal of the drain power supply circuit 843 is connected to the drain terminal of the transistor G7, and provides a drain voltage to the transistor G7 and a drain voltage to the transistor G6 through the output power coupling circuit 832. The gate voltage output terminals of the gate power supply circuit 851 are respectively connected to the gate terminals of all the transistors in the MMIC power amplifier, and can supply gate voltages to the transistors. In the MMIC power amplifier, the 5 drain power supply circuits and the 1 gate power supply circuits are designed to provide a static operating point for the three-stage cascade amplification circuit module, all drain voltages are the same, all gate voltages are the same, and all drain power supply circuits have different voltage sources from those of the gate power supply circuit 851, i.e., the voltage U1 is different from the voltage U2.
The rf signal is input to the input matching circuit 811 through the rf input terminal IN, the 50 ohm impedance of the rf signal source is transformed to the impedance required by the first stage transistor amplifying unit circuit 812 through the input matching circuit 811, and a positive slope frequency response curve is superimposed on the rf signal to ensure that the gain IN the operating band tends to be flat. The radio frequency signal output by the input matching circuit 811 is subjected to power amplification sequentially by the first-stage transistor amplifying unit circuit 812, the second-stage transistor amplifying unit circuit 821 and the third-stage transistor amplifying unit circuit 831, and the amplified radio frequency signal is subjected to power synthesis by the output power coupling circuit 832 and then is sent to the radio frequency output terminal OUT for output. In the working process of the amplifying circuit module, each stage of transistor amplifying unit circuit can increase the input impedance of the transistor through an RC parallel network connected with the front end of the transistor gate, so that the conditional stability in the working frequency band is realized, namely the input impedance of the transistor can be increased to a specific range to be far away from an unstable source impedance area, and the gain in the working frequency band is stabilized in a certain range; moreover, the drain power supply circuit and the grid power supply circuit designed by each stage of transistor amplifying unit circuit can supply power for each stage of transistor amplifying unit circuit, and based on the characteristic that high-frequency signals are easy to pass through a capacitor and low-frequency signals are easy to pass through a resistor, for radio frequency signals outside an operating frequency band, the RC series network in the drain power supply circuit and the grid power supply circuit and the RLC parallel network with the resistor, the capacitor and the passive microstrip line are equivalent can change the source impedance and the load impedance of the transistor so as to consume the signals outside the operating frequency band, inhibit the signals with higher gain possibly occurring outside the operating frequency band, enable the radio frequency signals outside the operating frequency band to tend to be stable, and improve the stability of the signals outside the operating frequency band. Meanwhile, an isolation inductor is designed in the drain power supply circuit, the energy of an alternating current signal can be stored according to the function of direct current resistance and alternating current of the inductor, along with the increase of frequency, the impedance value of the alternating current signal can be increased, so that the signal in an operating frequency band can be prevented from leaking out of the isolation inductor, and the provided direct current voltage U1 can supply power to the drain of a transistor through the isolation inductor, so that the bias filter circuit has small or even negligible influence on the performance of the amplifying circuit module in the operating frequency band, and the signal operation in the operating frequency band is not influenced.
The performance of the multi-stage MMIC power amplifier shown in fig. 8 is verified to obtain the stability of the signals in the operating frequency band and the signals outside the operating frequency band. Specifically, fig. 9 schematically shows a schematic diagram of a gain variation curve in an operating frequency band of a multi-stage MMIC power amplifier according to an embodiment of the present invention, and referring to fig. 9, the gain of the multi-stage MMIC power amplifier in a frequency band of 27GHz to 32GHz is relatively stable, and the flatness can reach 1.8dB (decibel) and has a relatively good input matching. Fig. 10 is a schematic diagram illustrating a gain variation curve outside the working frequency band of the multistage MMIC power amplifier provided by the embodiment of the present invention, and referring to fig. 10, the working frequency band of the amplifying circuit module is 27GHz to 32GHz, if the bias filter circuit provided by the present invention is not provided on the periphery of the amplifying circuit module, the gain curve is curve (1), the gain is reduced and unstable near 10GHz in the low frequency band outside 8GHz to 12GHz, oscillation occurs, the gain near 10GHz is suddenly changed, and the circuit device is easy to burn. In the multistage MMIC power amplifier provided by the invention, the gain curve is changed into the curve (2) by adding the offset filter circuit at the periphery of the amplifying circuit module, the abrupt gain is well suppressed, the curve near the 8-12GHz out-of-band frequency band is stable from a potential unstable state, and the stability is greatly improved.
The multistage MMIC power amplifier provided by the embodiment of the invention adopts MMIC integrated chip technology, has the advantages of easy integration, miniaturization, wide frequency band and the like, and can be widely applied to the applications of multistage MMIC power amplifier flatness optimization, out-of-band stability improvement and the like. According to the multistage MMIC power amplifier, the bias filter circuit is additionally arranged on the periphery of the amplifying circuit module comprising the multistage cascaded transistor amplifying circuit sub-module, so that the stability of the output gain of the circuit and the working stability of the amplifying circuit module can be enhanced while various inherent indexes of the amplifying circuit module are met, and the reliability and the practicability of an amplifying circuit integrated chip are improved. On one hand, the input matching circuit of the multistage MMIC power amplifier provided by the embodiment of the invention is positioned at the radio frequency input end, and the influence on the power and efficiency of the amplifying circuit module is very small after the input matching circuit is added. On the other hand, the bias filter circuit of the multistage MMIC power amplifier provided by the embodiment of the invention has little influence on various performance indexes of the amplifying circuit module in the band, can inhibit signal gain at the place where instability is likely to occur in the low frequency band outside the working frequency band, improves gain stability outside the working frequency band, and can be implemented on a circuit board on which the chip is mounted even when the chip of the amplifying circuit module cannot be integrated on the chip after the chip of the amplifying circuit module is processed.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A multi-stage monolithic microwave integrated circuit power amplifier comprising:
the radio frequency input end is used for receiving radio frequency signals;
the amplifying circuit module comprises at least two transistor amplifying circuit sub-modules which are connected in cascade, wherein the input end of a first-stage transistor amplifying circuit sub-module of the amplifying circuit module is connected with the radio frequency input end, and the amplifying circuit module is used for carrying out cascade amplification and transmission on power of the radio frequency signal;
the output port of the bias filter circuit is connected with the gate voltage input end and the drain voltage input end of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, and the bias filter circuit is used for providing the gate voltage and the drain voltage for each stage of transistor amplifying circuit sub-module of the amplifying circuit module as static working points and inhibiting the signal gain outside the working frequency band of the amplifying circuit module through a filter network of the bias filter circuit;
The radio frequency output end is connected with the output end of the amplifying circuit sub-module of the final transistor of the amplifying circuit module and is used for outputting radio frequency signals amplified by the amplifying circuit module.
2. The multi-stage monolithic microwave integrated circuit power amplifier of claim 1, wherein the bias filter circuit comprises at least one gate power supply circuit and at least one drain power supply circuit, the number of gate power supply circuits being determined based on the number of gate voltage supply terminals of the amplifying circuit module, the number of drain power supply circuits being determined based on the number of drain voltage supply terminals of the amplifying circuit module, the gate power supply circuit and the drain power supply circuit comprising a filter network therein;
each stage of transistor amplifying circuit submodule of the amplifying circuit module comprises a grid voltage power supply end and at least one drain voltage power supply end, and all grid voltage power supply ends of the amplifying circuit module are connected with the same grid power supply circuit or the grid voltage power supply ends of each stage of transistor amplifying circuit submodule of the amplifying circuit module are respectively connected with one grid power supply circuit; each drain voltage supply end of each transistor amplifying circuit sub-module of the amplifying circuit module is connected with one drain power supply circuit;
The grid power supply circuit is used for providing the grid voltage, the drain power supply circuit is used for providing the drain voltage, the grid power supply circuit and the drain power supply circuit jointly determine the static working point of each stage of transistor amplifying circuit sub-module of the amplifying circuit module, and the filtering network is used for inhibiting the signal gain outside the working frequency band of the amplifying circuit module.
3. The multi-stage monolithic microwave integrated circuit power amplifier of claim 2, wherein the drain power supply circuit comprises a first power supply terminal, a drain voltage output terminal, a first filter resistor, a first filter capacitor, a second filter resistor, a second filter capacitor, a first passive microstrip line, a third filter capacitor, and an isolation inductor;
the first power supply end is used for being connected with a first direct current voltage source;
one end of the first filter resistor is connected with the first power supply end, and the other end of the first filter resistor is connected with the first filter capacitor in series and then grounded to form a first filter network;
after the second filter resistor, the second filter capacitor and the first passive microstrip line are connected in parallel, one end of the second filter resistor, the second filter capacitor and the first passive microstrip line are connected with the first power supply end, and the other end of the second filter resistor, the second filter capacitor and the first passive microstrip line are connected with the first end of the isolation inductor to form a second filter network;
The first end of the isolation inductor is grounded through the third filter capacitor, and the second end of the isolation inductor is connected with the drain voltage output end;
the drain voltage output end is used as one terminal of the output port of the bias filter circuit and is connected with the drain voltage power supply end.
4. The multi-stage monolithic microwave integrated circuit power amplifier of claim 2, wherein the gate power supply circuit comprises a second power supply terminal, a gate voltage output terminal, a third filter resistor, a fourth filter capacitor, a fifth filter capacitor, and a second passive microstrip line;
the second power supply end is used for being connected with a second direct-current voltage source;
one end of the third filter resistor is connected with the second power supply end, and the other end of the third filter resistor is connected with the fourth filter capacitor in series and then grounded to form a third filter network;
after the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected in parallel, one end of the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected with the second power supply end, and the other end of the fourth filter resistor, the fifth filter capacitor and the second passive microstrip line are connected with the grid voltage output end to form a fourth filter network;
the grid voltage output end is used as one terminal of the output port of the bias filter circuit and is connected with the grid voltage power supply end.
5. The multi-stage monolithic microwave integrated circuit power amplifier of claim 2, wherein the voltage of the voltage source used by the gate power supply circuit and the drain power supply circuit are different.
6. The multi-stage monolithic microwave integrated circuit power amplifier of claim 1, wherein the first stage transistor amplifier circuit sub-module of the amplifier circuit module comprises an input matching circuit, a first stage transistor amplifier cell circuit, and a first inter-stage matching circuit;
the input matching circuit comprises a first input end and a first output end, the first input end is connected with the radio frequency input end, the first output end is connected with the input end of the first-stage transistor amplifying unit circuit, and the input matching circuit is used for matching the impedance of a signal source for transmitting the radio frequency signal with the input impedance of the first-stage transistor amplifying circuit sub-module and superposing a positive slope frequency response curve for the radio frequency signal received by the radio frequency input end;
the first-stage transistor amplifying unit circuit is used for performing first-stage amplification on the radio frequency signal input by the radio frequency input end;
the input end of the first inter-stage matching circuit is connected with the output end of the first-stage transistor amplifying unit circuit, and the first inter-stage matching circuit is used for carrying out impedance matching on the first-stage transistor amplifying unit circuit and a sub-module of a transistor amplifying circuit of a next stage of the sub-module of the first-stage transistor amplifying circuit.
7. The multi-stage monolithic microwave integrated circuit power amplifier of claim 6, wherein the input matching circuit comprises a matching inductance, a matching resistance, a first matching capacitance, a second matching capacitance, a third passive microstrip line, and a fourth passive microstrip line;
one end of the matching inductor is connected with the radio frequency input end, and the other end of the matching inductor is grounded;
and after being connected in parallel, one end of the matching resistor, the first matching capacitor and the third passive microstrip line is connected with the radio frequency input end, and the other end of the matching resistor, the second matching capacitor and the fourth passive microstrip line are connected in series and then are connected with the input end of the first-stage transistor amplifying unit circuit.
8. The multi-stage monolithic microwave integrated circuit power amplifier of claim 1, wherein the final transistor amplification circuit submodule of the amplification circuit module includes a final transistor amplification cell circuit and an output power coupling circuit;
the input end of the final-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module, and the final-stage transistor amplifying unit circuit is used for amplifying signals output by the previous-stage transistor amplifying circuit sub-module of the final-stage transistor amplifying circuit sub-module;
The output power coupling circuit comprises a coupling input end and a coupling output end, wherein the coupling input end is connected with the output end of the final-stage transistor amplifying unit circuit, the coupling output end is connected with the radio-frequency output end, and the output power coupling circuit is used for converting the load impedance of a rear-end load connected with the radio-frequency output end into matching with the output impedance of the final-stage transistor amplifying unit circuit and coupling signals output by the final-stage transistor amplifying unit circuit to the radio-frequency output end.
9. The multi-stage monolithic microwave integrated circuit power amplifier of claim 1, wherein the intermediate stage transistor amplification circuit submodule of the amplification circuit module includes an intermediate stage transistor amplification cell circuit and an intermediate stage interstage matching circuit;
the input end of the intermediate-stage transistor amplifying unit circuit is connected with the output end of the previous-stage transistor amplifying circuit sub-module of the intermediate-stage transistor amplifying circuit sub-module, and the intermediate-stage transistor amplifying unit circuit is used for amplifying signals output by the previous-stage transistor amplifying circuit sub-module of the intermediate-stage transistor amplifying circuit sub-module;
The intermediate stage interstage matching circuit is used for carrying out impedance matching on the intermediate stage transistor amplifying unit circuit and a next stage transistor amplifying circuit submodule of the intermediate stage transistor amplifying circuit submodule.
10. A multi-stage monolithic microwave integrated circuit power amplifier as claimed in any one of claims 6 to 9 wherein each transistor amplifying cell circuit comprises at least one transistor, the number of the at least one transistor being determined based on the target output power of the amplifying circuit module.
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| CN117650767A (en) * | 2024-01-29 | 2024-03-05 | 深圳市鼎阳科技股份有限公司 | Impedance transformation circuit, oscilloscope front-end circuit and oscilloscope |
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| CN117650767A (en) * | 2024-01-29 | 2024-03-05 | 深圳市鼎阳科技股份有限公司 | Impedance transformation circuit, oscilloscope front-end circuit and oscilloscope |
| CN117650767B (en) * | 2024-01-29 | 2024-03-29 | 深圳市鼎阳科技股份有限公司 | Impedance transformation circuit, oscilloscope front-end circuit and oscilloscope |
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