CN104753470A - X-band low noise amplifier - Google Patents
X-band low noise amplifier Download PDFInfo
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- CN104753470A CN104753470A CN201310747538.4A CN201310747538A CN104753470A CN 104753470 A CN104753470 A CN 104753470A CN 201310747538 A CN201310747538 A CN 201310747538A CN 104753470 A CN104753470 A CN 104753470A
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Abstract
The invention discloses an X-band low noise amplifier. The X-band low noise amplifier comprises an one-stage low noise amplification circuit and two stages of high gain amplification circuits, a first-stage transistor amplifier, a second-stage transistor amplifier and a third-stage transistor amplifier respectively correspond to the low noise amplification circuit and the two stages of high gain amplification circuits, all stages of transistor amplifiers are in cascade connection in sequence through intermediate stage match circuits, all stages of transistor amplifiers respectively comprise transistors, grid electrode biasing circuits and drain electrode biasing circuits, grid electrodes and drain electrodes of the transistors are connected with a power supply end through the biasing circuits, the grid electrode of the first-stage transistor amplifier is in series connection with an inductor and then grounded, and grid electrodes in other stages of transistor amplifiers are directly grounded. According to the X-band low noise amplifier, the frequency range is 9GHz-11GHz, the gain is larger than 33.9dB, noise is smaller than 0.75dB, input-output standing-wave ratio is smaller than 1.3, and advantages of miniaturization, low noise, high gain, low costs and high reliability are achieved.
Description
Technical field
The invention belongs to electronic circuit field, relate more specifically to a kind of single-chip low-noise amplifier being widely used in all kinds of radar component of X frequency range and communication system.
Background technology
Low noise amplifier is the amplifier that noise factor is very low.General high frequency or the intermediate-frequency preamplifier being used as all kinds of radio receiver, and the amplifying circuit of high sensitivity electron detection equipment.Amplifying the occasion of small-signal, the noise of amplifier self may be very serious to the interference of signal, therefore wishes to reduce this noise, to improve the signal to noise ratio of output.In prior art, low noise amplifier is the critical component of high sensitive receiver in the field such as satellite communication, radar communication, by low noise amplifier, thus improves the sensitivity of receiver.
Monolithic integrated microwave circuit (MMIC), because of features such as its circuit loss are little, noise is low, bandwidth, dynamic range are large, power is large, added efficiency is high, anti-electromagnetic-radiation ability is strong, becomes one of optimal selection manufacturing and designing millimeter wave low noise amplification integrated circuit.The X band low noise amplifier of MMIC technology is adopted to have a wide range of applications in the army and the people's purposes such as radio communication, radar and microwave imaging.A Focal point and difficult point in low noise amplifier design is the stability problem of circuit, because compared with having very high gain and noise in low-frequency range, so be easy to cause low-frequency oscillation, makes whole circuit can not steady operation.
Summary of the invention
1, object of the present invention.
The present invention is large in order to solve noise in low-frequency range of the prior art, causes low-frequency oscillation, makes the problem of circuit instability, and propose a kind of X band low noise amplifier.
2, the technical solution adopted in the present invention.
X band low noise amplifier comprises one-level low noise amplifier circuit, two-stage plus and blowup circuit, wherein one-level low noise amplifier circuit and two-stage plus and blowup circuit adopt crystal amplifier, first order crystal amplifier, second level crystal amplifier, third level crystal amplifier is corresponding low noise amplifier circuit respectively, two-stage plus and blowup circuit, crystal amplifier at different levels is by the cascade successively of intergrade match circuit, crystal amplifier at different levels comprises transistor respectively, gate bias circuit, drain bias circuit, the grid of described transistor is connected with feeder ear by biasing circuit with drain electrode, described first order crystal amplifier grid to be in series with inductance, the direct ground connection of grid in all the other crystal amplifiers at different levels, after signal is input to first order crystal amplifier by input matching circuit, finally exported by output matching circuit through second level crystal amplifier, third level crystal amplifier successively by intervalve matching circuit.
3, beneficial effect of the present invention.
The frequency range of low noise amplification chip of the present invention is 9GHz ~ 11GHz, gain is greater than 33.9dB, noise is less than 0.75 dB, input and output standing-wave ratio is less than 1.3, and input/output port all matches 50 Ω normal impedances, there is miniaturization, low noise, high-gain, low cost, the feature of high reliability, the application of microwave wireless business can be widely used in (such as: LMDS (LSN Local Microwave Distribution System), point to point wireless communication, point-to-multipoint radio communication, air traffic control, automobile collision avoidance radar, highway communication control and instrument application etc.) and microwave Military Application is (such as: satellite communication, radar, Aero-Space and other system equipments etc.) two large fields, its business is applied as a huge potential market.
Accompanying drawing explanation
Fig. 1 MMIC LNA chip concept block diagram.
The circuit of Fig. 2 Low Noise Amplifier MMIC connects block diagram.
Embodiment
Embodiment
As shown in Figure 1, lump and distributed circuit mixing coupling is taken in the design of MMIC circuit, adopt 3 grades of Cascaded amplification circuit, 3 grades of amplifications are integrated on same substrate, comprise one-level low noise amplifier circuit, two-stage plus and blowup circuit, wherein one-level low noise amplifier circuit and two-stage plus and blowup circuit adopt crystal amplifier, be divided into first order crystal amplifier, second level crystal amplifier, third level crystal amplifier is corresponding low noise amplifier circuit respectively, two-stage plus and blowup circuit, GaAs selected by semi-conducting material, active device selects PHEMT.Monolithic LNA is in order to realize the gain being greater than 30 dB, adopt 3 grades of Cascaded amplification circuit, 3 grades of amplifications are integrated on same substrate, and input and output port is matched to 50 Ω, connect with microstrip line between each module, while reduction loss, substantially increase stability.
As shown in Figure 2, described low noise amplifier comprises first order crystal amplifier, second level crystal amplifier, third level crystal amplifier, crystal amplifier at different levels is by the cascade successively of intergrade match circuit, crystal amplifier at different levels comprises transistor respectively, gate bias circuit, drain bias circuit, the grid of described transistor is connected with feeder ear by biasing circuit with drain electrode, described first order crystal amplifier grid to be in series with inductance, ensure that this chip obtains pole low noise under the condition obtaining good input standing wave simultaneously, make amplifying circuit noise at different levels and gain reach matched well simultaneously.The direct ground connection of grid in all the other crystal amplifiers at different levels.First order transistor amplifier circuit mainly solves noise factor, power gain and input vswr, singly refers to grid width 75 μm, and unit cell has 4 finger grizzly bars, grid width 300 μm; Second level crystal amplifier mainly solves power gain coupling and takes into account noise factor simultaneously, and singly refer to grid width 80 μm, unit cell 6 refers to, total grid width 480 μm; Third level crystal amplifier mainly solves power gain coupling and output VSWR, and singly refer to grid width 100 μm, unit cell 6 refers to, total grid width 600 μm, source and drain spacing 3 μm.Such design can obtain larger power output while effective step-down amplifier operating current.
Above-described embodiment does not limit the present invention in any way, and the technical scheme that the mode that every employing is equal to replacement or equivalent transformation obtains all drops in protection scope of the present invention.
Claims (3)
1. an X band low noise amplifier, it is characterized in that: comprise one-level low noise amplifier circuit, two-stage plus and blowup circuit, wherein one-level low noise amplifier circuit and two-stage plus and blowup circuit adopt crystal amplifier, first order crystal amplifier, second level crystal amplifier, third level crystal amplifier is corresponding low noise amplifier circuit respectively, two-stage plus and blowup circuit, crystal amplifier at different levels is by the cascade successively of intergrade match circuit, crystal amplifier at different levels comprises transistor respectively, gate bias circuit, drain bias circuit, the grid of described transistor is connected with feeder ear by biasing circuit with drain electrode, described first order crystal amplifier grid to be in series with inductance, the direct ground connection of grid in all the other crystal amplifiers at different levels, after signal is input to first order crystal amplifier by input matching circuit, finally exported by output matching circuit through second level crystal amplifier, third level crystal amplifier successively by intervalve matching circuit.
2. X band low noise amplifier according to claim 1, is characterized in that: first order crystal amplifier singly refer to grid width 75 μm, unit cell has 4 finger grizzly bars, grid width 300 μm; Second level crystal amplifier singly refer to grid width 80 μm, unit cell 6 refers to, total grid width 480 μm; Third level crystal amplifier singly refer to grid width 100 μm, unit cell 6 refers to, total grid width 600 μm, source and drain spacing 3 μm.
3. X band low noise amplifier according to claim 1, it is characterized in that: in MMIC circuit, take lump and distributed circuit mixing coupling, GaAs selected by semi-conducting material, active device selects PHEMT, input and output port is matched to 50 Ω, connects between each module with microstrip line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310747538.4A CN104753470A (en) | 2013-12-31 | 2013-12-31 | X-band low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310747538.4A CN104753470A (en) | 2013-12-31 | 2013-12-31 | X-band low noise amplifier |
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| CN104753470A true CN104753470A (en) | 2015-07-01 |
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| CN201310747538.4A Pending CN104753470A (en) | 2013-12-31 | 2013-12-31 | X-band low noise amplifier |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849881A (en) * | 2016-12-21 | 2017-06-13 | 北京时代民芯科技有限公司 | A kind of Band Monolithic Integrated integrated low-noise amplifier |
| WO2018006483A1 (en) * | 2016-07-05 | 2018-01-11 | 成都泰格微波技术股份有限公司 | 2.7-3.5 ghz 2w gan monolithic power amplifier and design method thereof |
| CN107994876A (en) * | 2018-01-10 | 2018-05-04 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for WI-FI modules |
| CN110401423A (en) * | 2019-07-18 | 2019-11-01 | 中国电子科技集团公司第三十八研究所 | A kind of Millimeter-wave CMOS low-noise amplifier |
| CN111245384A (en) * | 2020-01-16 | 2020-06-05 | 长沙瑞感电子科技有限公司 | Millimeter wave low noise amplifier and millimeter wave receiving circuit |
| CN112290895A (en) * | 2020-11-27 | 2021-01-29 | 中电科仪器仪表有限公司 | Low-noise radio frequency power amplifying circuit |
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| JP2003087062A (en) * | 2001-09-12 | 2003-03-20 | Hitachi Ltd | Semiconductor device |
| CN1825687A (en) * | 2006-02-27 | 2006-08-30 | 东南大学 | X wave band substrate integrated waveguide single board radio frequency system |
| CN202004725U (en) * | 2011-01-17 | 2011-10-05 | 成都西科微波通讯有限公司 | Miniaturized high-power X-band amplitude-limiting low-noise amplifier |
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2013
- 2013-12-31 CN CN201310747538.4A patent/CN104753470A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003087062A (en) * | 2001-09-12 | 2003-03-20 | Hitachi Ltd | Semiconductor device |
| CN1825687A (en) * | 2006-02-27 | 2006-08-30 | 东南大学 | X wave band substrate integrated waveguide single board radio frequency system |
| CN202004725U (en) * | 2011-01-17 | 2011-10-05 | 成都西科微波通讯有限公司 | Miniaturized high-power X-band amplitude-limiting low-noise amplifier |
Non-Patent Citations (3)
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| 孙卫忠: ""半绝缘砷化镓（SI-GaAs）单晶中的杂质与缺陷"", 《中国优秀博士学位论文全文数据库信息科技辑》 * |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018006483A1 (en) * | 2016-07-05 | 2018-01-11 | 成都泰格微波技术股份有限公司 | 2.7-3.5 ghz 2w gan monolithic power amplifier and design method thereof |
| CN106849881A (en) * | 2016-12-21 | 2017-06-13 | 北京时代民芯科技有限公司 | A kind of Band Monolithic Integrated integrated low-noise amplifier |
| CN106849881B (en) * | 2016-12-21 | 2020-05-19 | 北京时代民芯科技有限公司 | Broadband monolithic integration low-noise amplifier |
| CN107994876A (en) * | 2018-01-10 | 2018-05-04 | 无锡中普微电子有限公司 | Radio-frequency power amplifier for WI-FI modules |
| CN110401423A (en) * | 2019-07-18 | 2019-11-01 | 中国电子科技集团公司第三十八研究所 | A kind of Millimeter-wave CMOS low-noise amplifier |
| CN111245384A (en) * | 2020-01-16 | 2020-06-05 | 长沙瑞感电子科技有限公司 | Millimeter wave low noise amplifier and millimeter wave receiving circuit |
| CN112290895A (en) * | 2020-11-27 | 2021-01-29 | 中电科仪器仪表有限公司 | Low-noise radio frequency power amplifying circuit |
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Application publication date: 20150701 |