CN115514325A - L-band monolithic integrated power amplifier - Google Patents
L-band monolithic integrated power amplifier Download PDFInfo
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- CN115514325A CN115514325A CN202211048611.4A CN202211048611A CN115514325A CN 115514325 A CN115514325 A CN 115514325A CN 202211048611 A CN202211048611 A CN 202211048611A CN 115514325 A CN115514325 A CN 115514325A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
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Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to an L-band monolithic integrated power amplifier. The power amplifier includes: the input matching network unit, the transistor unit and the output matching network unit; through the specific circuit structures of the input matching network unit and the output matching network unit, the impedance matching of the input and the output of the transistor unit under the GAN process is realized, the matching of an off-chip inductor and an off-chip capacitor is not needed, and the problems of high cost, low efficiency, small bandwidth, large size and the like when the amplifier is applied to an L-band power amplifier in the prior art are solved.
Description
Technical Field
The invention relates to a power amplifier integrated circuit, in particular to an L-band monolithic integrated power amplifier, belonging to the technical field of semiconductors.
Background
With the continuous development of radar technology, phased array radars are applied more and more widely. The phased array radar has a plurality of internal integrated transceiving components, each transceiving component comprises a plurality of transceiving channels, and the power amplifier is one of the most core devices in the transceiving components, so that the size and the performance of the power amplifier have great influence on the improvement of the performance of the whole phased array radar, particularly the miniaturization. Monolithic power amplifier circuits can provide smaller size and better chip uniformity than hybrid integrated circuits; the power amplifier consumes most of system energy, and the high-efficiency power amplifier can reduce the management requirement on a heat dissipation system, improve the service life of a device and has great significance in improving the efficiency. Therefore, the research of high efficiency power amplifiers is very necessary.
In the current semiconductor process, a CMOS process is not suitable for being applied to a power amplifier with 5-10W power level due to the limitation of poor power density, efficiency and the like, the power amplifier with 5-10W power level is more products realized based on a GaAs process and a GaN process, but because the GaAs process has the limitation of power density (about 0.8W/mm), if the power amplifier with more than 5W is realized in an L wave band, transistors with 8 cells or even more than 16 cells are necessarily needed for power synthesis, the inductance used in the chip of the L wave band is often large in inductance value, and the loss is increased by a multi-time synthesis network, so that the size of the chip is very large; compared with a GaAs process and a CMOS process, the power density of the GaN process can reach more than 5W/mm, and monolithic integration is more convenient to realize. However, in practical applications, the bandwidth of the current industry high-efficiency power amplifier in the L-band is often between 200 and 600MHz, due to the influence of the input and output impedance matching factors of the transistor of the power amplifier, for example: the WFPN012014-P48 product of the medium-voltage power supply 55 has the working frequency of 1.2-1.4GHz and the bandwidth of 200MHz; the efficiency of a monolithically integrated power amplifier product capable of covering 1-2GHz operating bandwidth is less than 50%, for example: the WFDN008020-P48 product of the medium power supply 55 has the working frequency of 0.8-2.0GHz, the bandwidth of 1.2GHz and the efficiency of only 45%; and many broadband products need to match the off-chip inductor with the off-chip capacitor, which increases the size of the transceiving channel, for example, BW1180 product of medium voltage 13 has a working frequency of 0.2-1.8GHz and an efficiency of 54%, but needs the drain electrode plus the off-chip inductor to work, which is not beneficial to miniaturization design, and simultaneously, due to the additional factors introduced by assembly, the consistency variation between channels is poor, so that the receiving and transmitting component cannot be adapted to the L-band broadband phased array radar.
Therefore, the research on the GaN-based L-band high-efficiency monolithic integrated power amplifier covering the frequency band of 1-2GHz has positive significance.
Disclosure of Invention
Aiming at the improvement requirement in the prior art, the invention provides an L-band monolithic integrated power amplifier, which has the working frequency range of 1-2GHz, covers the whole L band, realizes the integration of all semiconductor devices in a chip, has the advantages of low cost of a transmitting channel, high efficiency, wide bandwidth, small size and the like, and is suitable for an L-band broadband phased array radar transmitting and receiving component.
The technical scheme adopted by the invention is as follows:
an L-band monolithically integrated power amplifier comprising: the input matching network unit, the transistor unit and the output matching network unit;
the input matching network unit comprises a resistor R1, a resistor R2, a resistor R3, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, an inductor L1, an inductor L2 and an inductor L3; the first end of the resistor R1 is connected with the first end of the capacitor C4 and then respectively connected with the first ends of the inductor L2 and the inductor L3, the second end of the resistor R1 is connected with the second end of the capacitor C4 and then used as the output of the input matching network unit to be connected with the transistor unit, the second end of the inductor L2 is connected with a radio frequency input signal RFin through the capacitor C2, and the second end of the inductor L3 is respectively connected with the first ends of the resistor R3 and the capacitor C3 through the resistor R2; the second end of the resistor R3 is connected with an external grid bias voltage signal VG, and the second end of the capacitor C3 is grounded; a first end of the inductor L1 is connected with a radio frequency input signal RFin, and a second end is grounded; the first end of the capacitor C1 is respectively connected with the first end of the inductor L1 and one end of the capacitor C2 connected with the radio frequency input signal RFin, and the other end of the capacitor C1 is grounded;
the crystal unit comprises a transistor DM1 and a transistor DM2, and the grid electrode of the transistor DM1 and the grid electrode of the transistor DM2 are both connected to a signal node N1 and used for receiving the radio-frequency signal provided by the input stage matching unit; the source electrode of the transistor DM1 and the source electrode of the transistor DM2 are both grounded, the drain electrode of the transistor DM1 is used as a first output end of the crystal unit and is connected with a first input port of the output matching network unit, and the drain electrode of the transistor DM2 is used as a second output end of the crystal unit and is connected with a second input port of the output matching network unit;
the output matching network unit comprises a transmission line T1, a transmission line T2, a transmission line T3, a transmission line T4, a capacitor C5, a capacitor C6, a capacitor C7, an inductor L6 and a resistor R4; a first end of a transmission line T1 is used as a first input port of an output matching network unit and connected with a first output end of a crystal unit, a second end of the transmission line T1 is connected with a second end of a transmission line T2 and then connected with a first end of a transmission line T3, the first end of the transmission line T2 is used as a second input port of the output matching network unit and connected with a second output end of the crystal unit, the second end of the transmission line T3 is respectively connected with a first end of a transmission line T4 and a first end of a capacitor C7, a second port of the transmission line T4 is respectively connected with a first end of a capacitor C5 and a first end of an inductor L6, a second end of the capacitor C5 is grounded, a second end of the inductor L6 is respectively connected with an external leakage level offset VD of a chip and a first end of the capacitor C6, a second end of the capacitor C6 is grounded, and a second end of the capacitor C7 is used as an output port of the output matching network unit; the resistor R4 is a balance resistor, and has one end connected to the first end of the transmission line T1 and the other end connected to the first end of the transmission line T2.
Furthermore, the input matching network unit, the transistor unit and the output matching network unit adopt a GaN-HEMT technology to realize on-chip integration.
Furthermore, each component in the input matching network unit and the output matching network unit is a passive semiconductor device, and the transistor DM1 and the transistor DM2 are depletion type high electron mobility transistors.
After the technical scheme is adopted, the invention has the following advantages:
1. according to the invention, through the specific circuit structures of the input matching network unit and the output matching network unit, the impedance matching of the input and the output of the transistor unit under the GAN process is realized, the matching of an off-chip inductor and an off-chip capacitor is not needed, and the problems of high cost, low efficiency, small bandwidth, large size and the like when the amplifier is applied to an L-band power amplifier in the prior art are solved.
2. In the output matching network unit, the additionally arranged inductor L6 can be used as a load end, and can further improve the gain of the device.
3. Under the synergistic action of the specific input matching network unit, the crystal unit and the output matching network unit, the working frequency of the crystal unit covers 1-2GHz, the working bandwidth is 1GHz, the typical linear gain reaches 17dB under the condition of only adopting a primary amplification structure, the saturated output power is more than 6W (38 dBm), and the typical value of the saturated output additional efficiency reaches 60%.
Drawings
Fig. 1 is a schematic circuit diagram of an L-band monolithically integrated power amplifier proposed in the present invention;
fig. 2 shows a linear gain curve of an L-band monolithically integrated power amplifier proposed in the present invention;
fig. 3 shows a return loss curve of an input port of an L-band monolithically integrated power amplifier proposed in the present invention;
fig. 4 shows a saturated output power curve diagram of an L-band monolithically integrated power amplifier proposed in the present invention;
fig. 5 is a graph illustrating the saturation output added efficiency of an L-band monolithically integrated power amplifier proposed in the present invention;
reference numerals are as follows:
1. input matching network unit, 2, transistor unit, 3, output matching network unit.
Detailed Description
In order to more clearly express the advantages of the present invention, the present invention is described in more detail below with reference to the detailed description and the accompanying drawings. Those skilled in the art of integrated circuits will appreciate that the present invention is intended to be generic and not specific, that the scope of the invention can be extended and not limited to the described circuit configurations.
Fig. 1 shows a schematic circuit structure diagram of an L-band monolithically integrated power amplifier according to the present invention, and as shown in fig. 1, the circuit of the L-band monolithically integrated power amplifier includes an input matching network unit, a transistor unit, and an output matching network unit. The input of the input matching network unit is connected with a radio frequency input signal RFin, and the output of the input matching network unit is connected with the input of the transistor unit; completing 50 ohm input matching of the radio frequency input signal Rfin and converting the input radio frequency voltage signal into a radio frequency current signal. The transistor unit is a signal amplification unit, the output of the transistor unit is connected with the input of the output matching network unit, and the transistor unit is used for amplifying and outputting the received radio frequency current signal. And the output matching network unit performs impedance matching on the amplified radio frequency current signal and outputs a radio frequency signal Rfout.
The input matching network unit comprises a resistor R1, a resistor R2, a resistor R3, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, an inductor L1, an inductor L2 and an inductor L3; the first end of the resistor R1 is connected with the first end of the capacitor C4 and then respectively connected with the first ends of the inductor L2 and the inductor L3, the second end of the resistor R1 is connected with the second end of the capacitor C4 and then used as the output of the input matching network unit to be connected with the transistor unit, the second end of the inductor L2 is connected with a radio frequency input signal RFin through the capacitor C2, and the second end of the inductor L3 is connected with the first ends of the resistor R3 and the capacitor C3 through the resistor R2; the second end of the resistor R3 is connected with an external grid bias voltage signal VG, and the second end of the capacitor C3 is grounded; the first end of the inductor L1 is connected with a radio frequency input signal RFin, and the second end is grounded; the first end of the capacitor C1 is connected to the first end of the inductor L1 and the end of the capacitor C2 connected to the rf input signal RFin, respectively, and the other end is grounded.
The crystal unit comprises a transistor DM1 and a transistor DM2, and the grid electrode of the transistor DM1 and the grid electrode of the transistor DM2 are both connected to a signal node N1 and used for receiving the radio-frequency signal provided by the input stage matching unit; the source of the transistor DM1 and the source of the transistor DM2 are both grounded, the drain of the transistor DM1 is connected to the first input port of the output matching network unit as the first output end of the crystal unit, and the drain of the transistor DM2 is connected to the second input port of the output matching network unit as the second output end of the crystal unit. The output matching network unit comprises a transmission line T1, a transmission line T2, a transmission line T3, a transmission line T4, a capacitor C5, a capacitor C6, a capacitor C7, an inductor L6 and a resistor R4; a first end of a transmission line T1 is used as a first input port of an output matching network unit to be connected with a first output end of a crystal unit, a second end of the transmission line T1 is connected with a first end of a transmission line T3 after being connected with a second end of a transmission line T2, the first end of the transmission line T2 is used as a second input port of the output matching network unit to be connected with a second output end of the crystal unit, the second end of the transmission line T3 is respectively connected with a first end of a transmission line T4 and a first end of a capacitor C7, the second end of the transmission line T4 is respectively connected with a first end of a capacitor C5 and a first end of an inductor L6, the second end of the capacitor C5 is grounded, the second end of the inductor L6 is respectively connected with an external drain bias VD of a chip and the first end of the capacitor C6, the second end of the capacitor C6 is grounded, and the second end of the capacitor C7 is an output port of the output matching network unit; the resistor R4 serves as a balance resistor for preventing the power amplifier from odd-mode oscillation, and has one end connected to the first end of the transmission line T1 and the other end connected to the first end of the transmission line T2.
When the radio frequency conversion unit is used, the units are matched with each other to convert an input radio frequency signal Rfin into a radio frequency signal Rfout for output. In the input matching network unit, the capacitor C2 is used as a blocking capacitor of the input matching unit and participates in 50-ohm impedance matching; the resistor R2 is used for reducing the Q value of the input matching network; the capacitor C3 is used as an on-chip filter capacitor of an external grid bias port of the chip; the resistor R3 is connected with an external grid bias voltage signal VG, and the value of the external grid bias voltage signal VG is-2V; through the cooperation of the capacitor C2, the resistor R2, the capacitor C3 and the resistor R3, the resistor R1 and the capacitor C4 which are arranged in parallel are arranged, and the stability of the whole device is improved. In the crystal unit, two transistors are both GaN-HEMTs, the sizes of the two transistors are completely the same, and the two transistors are connected in parallel to realize power amplification. In the output matching network unit, the value ranges of the transmission line T4, the capacitor C5 and the inductor L6 are set according to the microwave network matching principle, and impedance tuning is realized through the set value ranges of the transmission line T4, the capacitor C5 and the inductor L6, so that the leakage level emission efficiency is improved; the second port of the inductor L6 is connected with the first port of the capacitor C6 and is simultaneously connected with the external leakage offset VD of the chip, the value of the VD is 28V, the second port of the capacitor C6 is grounded, the filtering effect of the leakage offset port of the chip is achieved, and the capacitor C7 is used as a blocking capacitor, so that the stability of the device is enhanced at the output end.
Fig. 2 is a graph showing the linear gain curve of an L-band monolithically integrated power amplifier proposed in the present invention. As can be seen from fig. 2, the linear gain of the power amplifier of this embodiment is about 28dB in the operating frequency band and exhibits a positive slope gain characteristic.
Fig. 3 shows a return loss curve of an input port of an L-band monolithically integrated power amplifier proposed in the present invention. As can be seen from fig. 3, the standing wave ratio of the input port is about 1.1 in the operating band, which indicates that the input port is well matched.
Fig. 4 shows a saturated output power curve diagram of an L-band monolithically integrated power amplifier proposed in the present invention; . As can be seen from fig. 4, the saturation output power is greater than 27dBm in the operating band and the power output characteristic with positive slope is exhibited.
Fig. 5 shows a saturated output additional efficiency curve of an L-band monolithically integrated power amplifier proposed in the present invention. As can be seen from fig. 5, the saturation output additional efficiency in the operating frequency band is greater than 45%, which is suitable for most radar transmission channels.
In conclusion, the invention solves the application problems of a plurality of core indexes such as bandwidth, efficiency, size and the like of the L-band power amplifier, realizes low cost and miniaturization through the on-chip integrated inductor and the single-stage amplification structure, is suitable for being used as a final-stage power amplifier in the L-band broadband phased array radar transceiver component and also suitable for being used as a secondary-final-stage power driving stage in the L-band broadband phased array radar transceiver component, only needs leakage-stage voltage bias and grid voltage bias outside a chip, and is very simple and convenient to apply in a primary component through a single-chip integrated mode.
The above embodiments are only specific examples for clearly illustrating the invention, and are not limited to the embodiments of the invention, and for those skilled in the semiconductor field, on the basis of the above description, other different forms of extensions may be made, and not all embodiments may be exhaustive, and all obvious changes or modifications that are included in the technical solutions of the present invention are included in the protection scope of the present invention.
Claims (3)
1. An L-band monolithically integrated power amplifier comprising: input matching network unit, transistor cell and output matching network unit, its characterized in that:
the input matching network unit comprises a resistor R1, a resistor R2, a resistor R3, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, an inductor L1, an inductor L2 and an inductor L3; the first end of the resistor R1 is connected with the first end of the capacitor C4 and then respectively connected with the first ends of the inductor L2 and the inductor L3, the second end of the resistor R1 is connected with the second end of the capacitor C4 and then used as the output of the input matching network unit to be connected with the transistor unit, the second end of the inductor L2 is connected with a radio frequency input signal RFin through the capacitor C2, and the second end of the inductor L3 is respectively connected with the first ends of the resistor R3 and the capacitor C3 through the resistor R2; the second end of the resistor R3 is connected with an external grid bias voltage signal VG, and the second end of the capacitor C3 is grounded; the first end of the inductor L1 is connected with a radio frequency input signal RFin, and the second end is grounded; the first end of the capacitor C1 is respectively connected with the first end of the inductor L1 and one end of the capacitor C2 connected with the radio frequency input signal RFin, and the other end of the capacitor C1 is grounded;
the crystal unit comprises a transistor DM1 and a transistor DM2, and the grid electrode of the transistor DM1 and the grid electrode of the transistor DM2 are both connected to a signal node N1 and used for receiving the radio-frequency signal provided by the input stage matching unit; the source electrode of the transistor DM1 and the source electrode of the transistor DM2 are both grounded, the drain electrode of the transistor DM1 is used as a first output end of the crystal unit and is connected with a first input port of the output matching network unit, and the drain electrode of the transistor DM2 is used as a second output end of the crystal unit and is connected with a second input port of the output matching network unit;
the output matching network unit comprises a transmission line T1, a transmission line T2, a transmission line T3, a transmission line T4, a capacitor C5, a capacitor C6, a capacitor C7, an inductor L6 and a resistor R4; a first end of a transmission line T1 is used as a first input port of an output matching network unit and connected with a first output end of a crystal unit, a second end of the transmission line T1 is connected with a second end of a transmission line T2 and then connected with a first end of a transmission line T3, the first end of the transmission line T2 is used as a second input port of the output matching network unit and connected with a second output end of the crystal unit, the second end of the transmission line T3 is respectively connected with a first end of a transmission line T4 and a first end of a capacitor C7, a second port of the transmission line T4 is respectively connected with a first end of a capacitor C5 and a first end of an inductor L6, a second end of the capacitor C5 is grounded, a second end of the inductor L6 is respectively connected with an external leakage level offset VD of a chip and a first end of the capacitor C6, a second end of the capacitor C6 is grounded, and a second end of the capacitor C7 is used as an output port of the output matching network unit; the resistor R4 is a balance resistor, and has one end connected to the first end of the transmission line T1 and the other end connected to the first end of the transmission line T2.
2. The L-band monolithic integrated power amplifier of claim 1, wherein: the input matching network unit, the transistor unit and the output matching network unit adopt a GaN-HEMT technology to realize on-chip integration.
3. The L-band monolithically integrated power amplifier of claim 1, wherein: each part in the input matching network unit and the output matching network unit is a passive semiconductor device, and the transistor DM1 and the transistor DM2 are depletion type high electron mobility transistors.
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| CN202211048611.4A CN115514325A (en) | 2022-08-30 | 2022-08-30 | L-band monolithic integrated power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115940991A (en) * | 2023-03-01 | 2023-04-07 | 中国电子科技集团公司第十研究所 | High-isolation L-band transmitting-receiving passive annular assembly and working method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115940991A (en) * | 2023-03-01 | 2023-04-07 | 中国电子科技集团公司第十研究所 | High-isolation L-band transmitting-receiving passive annular assembly and working method thereof |
| CN115940991B (en) * | 2023-03-01 | 2023-06-13 | 中国电子科技集团公司第十研究所 | High-isolation L-band receiving and transmitting passive annular component and working method thereof |
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