CN109120302B - Miniaturized ku frequency channel ODU module - Google Patents
Miniaturized ku frequency channel ODU module Download PDFInfo
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- CN109120302B CN109120302B CN201811189709.5A CN201811189709A CN109120302B CN 109120302 B CN109120302 B CN 109120302B CN 201811189709 A CN201811189709 A CN 201811189709A CN 109120302 B CN109120302 B CN 109120302B
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- 239000012212 insulator Substances 0.000 claims abstract description 26
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- 238000001914 filtration Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 39
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a miniaturized ku frequency band ODU module, which comprises a transmitting channel module and a receiving channel module, wherein the transmitting channel module comprises a first box body, and is divided into a first upper cavity and a first lower cavity which are isolated from each other, a first intermediate frequency cavity, a first radio frequency cavity, a first power supply cavity and a first cavity filter are arranged in the first upper cavity, and a first local oscillation circuit is arranged in the first lower cavity and is connected to the first radio frequency cavity through a first insulator and a first perforated microstrip line; the receiving channel module comprises a second box body, wherein the second box body is divided into a second upper cavity and a second lower cavity which are isolated from each other, a second cavity filter, a second radio frequency cavity, a second intermediate frequency cavity and a second power supply cavity are arranged in the second upper cavity, a second local oscillation circuit is arranged in the second lower cavity, and the second local oscillation circuit is connected to the second radio frequency cavity through a second insulator and a second perforated microstrip line. The ODU module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a miniaturized ku frequency band ODU module.
Background
In satellite communication devices, ODU (Out-door Unit) refers to an outdoor Unit, mainly comprising frequency conversion and power amplification, and may be specifically divided into a transmitting channel and a receiving channel, where the transmitting channel is usually referred to as BUC (Block Up-Converter), i.e. an Up-conversion radio frequency power amplifier, and the receiving channel is mainly referred to as LNB (Low Noise Block down-Converter), i.e. a low noise amplifying, frequency Converter.
In an on-board communication device, ODUs are mainly in the form of constituent modules, with standardized interfaces and bulk weights, due to space constraints. In the prior art, for the ODU module of ku frequency band, there are large volume and heavy weight, and many external interfaces, and unreliable working performance, and the implemented channel frequency conversion is also relatively single, for example, the local oscillation frequencies of the transmitting channel module and the receiving channel module are fixed and not adjustable, so that it is difficult to satisfy the application requirements of miniaturization and multiple purposes.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a miniaturized ku frequency band ODU module, which solves the problems of large volume, unreasonable internal structure, unstable and reliable working performance and the like of a satellite-borne ODU module in the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is to provide a miniaturized ku frequency band ODU module, which comprises a transmitting channel module and a receiving channel module, wherein the transmitting channel module comprises a first box body, and the inside of the first box body comprises a first upper cavity and a first lower cavity which are isolated from each other; the first upper cavity is internally provided with a first intermediate frequency cavity for accommodating a first intermediate frequency circuit, a first radio frequency cavity for accommodating a first radio frequency circuit and a first power supply cavity for accommodating a first power supply circuit, the first lower cavity is internally provided with a first local oscillation circuit, the first local oscillation circuit is connected into the first radio frequency cavity through a first insulator and a first microstrip line with holes, the output first local oscillation signal is mixed with a first intermediate frequency signal output by the first intermediate frequency circuit to obtain a first radio frequency signal, and the first radio frequency signal is amplified and filtered by the first radio frequency circuit and then is input into a first cavity filter arranged in the first upper cavity; the receiving channel module comprises a second box body, wherein the second box body comprises a second upper cavity and a second lower cavity which are isolated from each other; a second cavity filter for filtering the input second radio frequency signal is arranged in the second upper cavity, a second radio frequency signal output end of the second cavity filter is connected with a second radio frequency circuit, a second intermediate frequency cavity for accommodating a second intermediate frequency circuit and a second power supply cavity for accommodating a second power supply circuit, and a second local oscillation circuit is arranged in the second lower cavity; and a second intermediate frequency signal generated after mixing the second radio frequency signal output by the second radio frequency circuit and the second local oscillation signal generated by the second local oscillation circuit is connected to the second intermediate frequency circuit.
In another embodiment of the miniaturized ku-band ODU module of the present invention, the first intermediate frequency cavity is disposed at a left portion of the first upper cavity, the first power supply cavity is located at a right side of the first intermediate frequency cavity and is in power supply connection with the first intermediate frequency cavity, the first radio frequency cavity is in an inverse L-shaped structure and is located at a lower side of the first intermediate frequency cavity and a right side of the first power supply cavity, and the first cavity filter is disposed at an upper portion of the first upper cavity and is located at an upper side of the first intermediate frequency cavity, the first power supply cavity and the first radio frequency cavity; a first power port, a first reference source input port, a first intermediate frequency signal input port are arranged on the outer wall of the first box body on the left side adjacent to the first intermediate frequency cavity, and a first radio frequency signal output port is arranged on the outer wall of the first box body on the upper side adjacent to the first cavity filter; the first power port is electrically connected to the first power circuit in the first power cavity, the first reference source input port is electrically connected to the first local oscillator circuit, the first intermediate frequency signal input port is electrically connected to the first intermediate frequency circuit of the first intermediate frequency cavity, and the first radio frequency signal output port is communicated with the first cavity filter.
In another embodiment of the miniaturized ku frequency band ODU module of the present invention, the first radio frequency circuit is divided into a first lateral branch and a first vertical branch, the first lateral branch includes a first mixer, a first stage radio frequency filter, a first stage radio frequency gain amplifier, and the first vertical branch includes a second stage radio frequency filter, a second stage radio frequency gain amplifier and a radio frequency power amplifier, which are sequentially cascaded, and the first stage radio frequency gain amplifier and the second stage radio frequency filter are electrically connected through a first turning microstrip line.
In another embodiment of the miniaturized ku frequency band ODU module of the present invention, the first local oscillation circuit includes a first frequency synthesizer, a first frequency multiplier, a first local oscillation amplifier and a first local oscillation filter that are sequentially connected in series, where the first frequency synthesizer is electrically connected to the first reference source input port, an external reference source inputs a first reference frequency signal to the first frequency synthesizer through the first reference source input port, a first digital control interface of the first frequency synthesizer is correspondingly and electrically connected to a first single chip microcomputer, the first single chip microcomputer inputs a frequency control parameter to the first frequency synthesizer through the first digital control interface, the first frequency multiplier performs frequency doubling on a signal output by the first frequency synthesizer to generate a first local oscillation signal with a required frequency, then the first local oscillation amplifier performs power amplification on the first local oscillation signal, and then the first local oscillation filter performs suppression filtering on the first local oscillation signal; the first radio frequency cavity comprises a first perforated microstrip line connected with the output end of the first frequency multiplier, wherein the perforated end is electrically connected with the output end of the first frequency multiplier positioned in the first lower cavity through the first insulator, the other end of the first radio frequency cavity is electrically connected with the input end of the first local oscillator amplifier, the output end of the first local oscillator amplifier is electrically connected with the first local oscillator filter, and the output end of the first local oscillator filter is electrically connected with the first mixer.
In another embodiment of the miniaturized ku-band ODU module of the present invention, the first intermediate frequency circuit includes a temperature compensating attenuator, a first stage intermediate frequency filter, a first stage intermediate frequency amplifier, a second stage intermediate frequency amplifier, and a second stage intermediate frequency filter that are sequentially cascaded, and the second stage intermediate frequency filter is electrically connected to the first mixer.
In another embodiment of the miniaturized ku frequency band ODU module of the present invention, the first local oscillation filter is a microstrip filter, and the first stage radio frequency filter and the second stage radio frequency filter are radio frequency microstrip filters with the same structure.
In another embodiment of the miniaturized ku frequency band ODU module of the present invention, the second intermediate frequency cavity includes three vertical and communicated sub-cavities, wherein the right side is an intermediate frequency first sub-cavity, the middle is an intermediate frequency second sub-cavity, the left side is an intermediate frequency third sub-cavity, the intermediate frequency first sub-cavity and the intermediate frequency second sub-cavity are the same in height, and the intermediate frequency third sub-cavity is higher than the intermediate frequency first sub-cavity and the intermediate frequency second sub-cavity in height; the second cavity filter is located the left side of second upper portion cavity, the second intermediate frequency chamber is located the right side of second cavity filter, the second power supply chamber is located the first intermediate frequency chamber in second intermediate frequency chamber and the upside in second intermediate frequency chamber, and with intermediate frequency second divides the chamber intercommunication, the upper edge in second power supply chamber with the upper edge equal height parallel and level in intermediate frequency first branch chamber, second cavity filter has offered the second radio frequency signal input port to the outside on the second box body outside, the second radio frequency signal output end sets up the second cavity filter is in the lower part right side in the second upper portion cavity.
In another embodiment of the miniaturized ku frequency band ODU module of the present invention, the second radio frequency circuit includes a first microstrip electrically connected to the second radio frequency signal output end, the other end of the first microstrip is electrically connected to a first stage NC1001C-812S low noise amplification chip and a second stage NC1001C-812S low noise amplification chip that are connected in series in two stages, the second stage NC1001C-812S low noise amplification chip is electrically connected to an image rejection filter backwards, the output end of the image rejection filter is electrically connected to a third stage NC1001C-812S low noise amplification chip through the second microstrip, and the third stage NC1001C-812S low noise amplification chip is electrically connected to the radio frequency end of the mixing chip NC17111C-725M backwards through a third microstrip; the second microstrip is an arc microstrip, and the transverse arrangement of the second radio frequency circuit is changed into vertical arrangement.
In another embodiment of the miniaturized ku-band ODU module of the present invention, a second local oscillator signal output end of the second local oscillator circuit located in the second lower cavity is connected to the second upper cavity through a second insulator, and is electrically connected to an amplifying chip CHA3666 through a fourth microstrip with a hole, an output end of the amplifying chip CHA3666 is connected to a second local oscillator filter, the second local oscillator filter is connected to a local oscillator end of the mixing chip NC17111C-725M, and an intermediate frequency end of the mixing chip NC17111C-725M is connected to a second intermediate frequency signal input end of the second intermediate frequency cavity through a fifth microstrip.
In another embodiment of the miniaturized ku-band ODU module of the present invention, the image rejection filter and the second local oscillation filter are microstrip filters.
The beneficial effects of the invention are as follows: the invention discloses a miniaturized ku frequency band ODU module, which comprises a transmitting channel module and a receiving channel module, wherein the transmitting channel module comprises a first box body, and is divided into a first upper cavity and a first lower cavity which are isolated from each other, a first intermediate frequency cavity, a first radio frequency cavity, a first power supply cavity and a first cavity filter are arranged in the first upper cavity, and a first local oscillation circuit is arranged in the first lower cavity and is connected to the first radio frequency cavity through a first insulator and a first perforated microstrip line; the receiving channel module comprises a second box body, wherein the second box body is divided into a second upper cavity and a second lower cavity which are isolated from each other, a second cavity filter, a second radio frequency cavity, a second intermediate frequency cavity and a second power supply cavity are arranged in the second upper cavity, a second local oscillation circuit is arranged in the second lower cavity, and the second local oscillation circuit is connected to the second radio frequency cavity through a second insulator and a second perforated microstrip line. The ODU module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
Drawings
FIG. 1 is a schematic diagram of a transmit channel module in an embodiment of a miniaturized ku-band ODU module according to the present invention;
FIG. 2 is a schematic view showing the composition of a first upper cavity in another embodiment of the miniaturized ku-band ODU module according to the invention;
FIG. 3 is a schematic diagram of a first upper cavity circuit in another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 4 is a schematic diagram of a first upper cavity circuit portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 5 is a diagram showing the structure of an insulator in another embodiment of the miniaturized ku-band ODU module of the invention;
FIG. 6 is a block diagram illustrating a first local oscillator microcircuit of another embodiment of a miniaturized ku band ODU module according to the present invention;
fig. 7 is a schematic diagram illustrating a first intermediate frequency circuit composition of another embodiment of the miniaturized ku-band ODU module of the present invention;
fig. 8 is a schematic diagram illustrating a receiving channel module of another embodiment of the miniaturized ku-band ODU module according to the present invention;
FIG. 9 is a schematic diagram of a second upper cavity circuit of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 10 is a schematic diagram of a circuit component of a second upper cavity portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 11 is a schematic diagram of a circuit component of a second upper cavity portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 12 is a schematic diagram of a circuit component of a second upper cavity portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 13 is a schematic diagram of a circuit component of a second upper cavity portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
FIG. 14 is a schematic diagram of a circuit component of a second upper cavity portion of another embodiment of a miniaturized ku-band ODU module according to the invention;
fig. 15 is a schematic diagram of a microstrip filter composition according to another embodiment of the miniaturized ku-band ODU module of the present invention.
Detailed Description
In order that the invention may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. For a miniaturized Ku frequency band ODU module, the module mainly includes a transmitting channel module and a receiving channel module. Fig. 1 is a schematic diagram of an embodiment of a transmit channel module. As shown in fig. 1, the emission channel module includes a first box M1 and a box cover covering the first box M1, the first box M1 includes a first upper cavity and a first lower cavity isolated from each other, and the box cover includes a first upper box cover M21 covering the first upper cavity and a first lower box cover M22 covering the first lower cavity. Preferably, the volume of the entire firing channel module is 60mm×50mm×14mm.
With further reference to fig. 2, a first intermediate frequency cavity M31 for accommodating a first intermediate frequency circuit, a first radio frequency cavity M32 for accommodating a first radio frequency circuit, and a first power supply cavity M33 for accommodating a first power supply circuit are provided in the first upper cavity M3. The first lower cavity is internally provided with a first local oscillation circuit, the first local oscillation circuit is connected to the first radio frequency cavity through an insulator and a microstrip line with holes, the output first local oscillation signal and a first intermediate frequency signal output by the first intermediate frequency circuit are subjected to frequency mixing to obtain a first radio frequency signal, and the first radio frequency signal is input to a first cavity filter M34 arranged in the first upper cavity M3 after being amplified and filtered by the first radio frequency circuit.
Further, as shown in fig. 2, the first intermediate frequency cavity M31 is disposed at the left portion of the first upper cavity M3, the first power supply cavity M33 is located at the right side of the first intermediate frequency cavity M31 and is electrically connected with the first intermediate frequency cavity, the first radio frequency cavity M32 is in an inverted-L structure, and is located at the lower side of the first intermediate frequency cavity M31 and the right side of the first power supply cavity M33, and the first cavity filter M34 is disposed at the upper portion of the first upper cavity M3 and is located at the upper sides of the first intermediate frequency cavity M31, the first power supply cavity M33 and the first radio frequency cavity M32. The structural layout can reasonably divide each functional module in a limited volume, avoid mutual interference and ensure good electromagnetic compatibility.
Further, referring to fig. 1 and 2, a first power port is provided on an outer wall of the first box body adjacent to the first intermediate frequency cavity M31 on the left side, the first power port includes a dc 5V power port M101 and a dc 6V power port M102, a first reference source input port M11, a first intermediate frequency signal input port M12, and a first radio frequency signal output port M13 is provided on an outer wall of the first box body adjacent to the first cavity filter on the upper side; the first power port is electrically connected to the first power circuit in the first power cavity M33, the first reference source input port M11 is electrically connected to the first local oscillator circuit in the first lower cavity, the first intermediate frequency signal input port M12 is electrically connected to the first intermediate frequency circuit of the first intermediate frequency cavity M31, and the first radio frequency signal output port M13 is in communication with the first cavity filter M34. The maximum current of the direct current 6V of the transmitting channel module is 1.8A, the power consumption is 10.8W, the maximum current of the direct current 5V is 533mA, the power consumption is 2.665W, and the power consumption of the whole module is 13.465W.
Further, as shown in fig. 3, the circuit composition inside the first rf cavity is further shown on the basis of fig. 2, and a part of the circuit of the first local oscillation circuit is further included, because another part of the first local oscillation circuit is located in the first lower cavity. Preferably, the first local oscillator circuit includes a first frequency synthesizer, a first frequency multiplier, a first local oscillator amplifier and a first local oscillator filter that are sequentially connected in series, the first frequency synthesizer is electrically connected with the first reference source input port, the external reference source inputs a first reference frequency signal to the first frequency synthesizer through the first reference source input port, and the first frequency multiplier performs frequency doubling on the signal output by the first frequency synthesizer to generate a first local oscillator signal with a required frequency. Here, the first frequency synthesizer and the first frequency multiplier are located in a first lower cavity, and the first local oscillator amplifier and the first local oscillator filter are located in a first radio frequency cavity of a first upper cavity. The first local oscillation amplifier is used for amplifying power of the first local oscillation signal, and the first local oscillation filter is used for restraining and filtering the first local oscillation signal. In order to input the first local oscillator signal generated by the first frequency multiplier into the first mixer of the first radio frequency circuit, and subject to volume limitation, an electrical connection is established between the first upper cavity and the first lower cavity by means of a first insulator wall penetrating manner. The first local oscillation circuit in the first radio frequency cavity includes a first local oscillation amplifier 321 and a first local oscillation filter 322, where a first insulator is shown to be electrically connected to an input terminal of the first local oscillation amplifier 321 through a first microstrip line W1 with a hole. The first radio frequency circuit in the first radio frequency cavity is divided into a first transverse branch and a first vertical branch, the first transverse branch comprises a first mixer 323, a first-stage radio frequency filter 324 and a first-stage radio frequency gain amplifier 325 which are cascaded in sequence, the first vertical branch comprises a second-stage radio frequency filter 326, a second-stage radio frequency gain amplifier 327 and a radio frequency power amplifier 328 which are cascaded in sequence, the first-stage radio frequency gain amplifier 325 and the second-stage radio frequency filter 326 are electrically connected through a first turning microstrip line W0, the second-stage radio frequency gain amplifier 327 and the radio frequency power amplifier 328 are electrically connected through a microstrip line W2, and the radio frequency power amplifier 328 and the first cavity filter 34 are electrically connected through a microstrip line W3. The first stage RF filter 324 and the second stage RF filter 326 are RF microstrip filters having the same structure.
The first local oscillation circuit and the first radio frequency circuit in the first radio frequency cavity and the circuit connection relation between the first local oscillation circuit and the first power supply cavity are specifically described below.
As shown in fig. 4, the first radio frequency cavity includes a microstrip line W1 connected to the output end of the first local oscillator circuit, where the microstrip line W1 is a first microstrip line with holes, the hole end passes through a metal wall between the first upper cavity and the first lower cavity via a first insulator, and is electrically connected to the output end of the first frequency multiplier located in the first lower cavity, the other end of the microstrip line W1 is electrically connected to the input end of the first local oscillator amplifier 321, the output end of the first local oscillator amplifier 321 is electrically connected to the first local oscillator filter 322, and the first local oscillator filter 322 is a microstrip filter.
Here, the first insulator has a structure including a cylindrical metal outer wall J2, an insulating layer J3, and a gold wire J1 as shown in fig. 5. The surface layer of the metal outer wall J2 is gold-plated, holes are drilled in the metal wall between the two cavities, then the insulator is inserted into the through hole, the metal outer wall and the through hole are firmly welded, the metal wire J1 and the metal outer wall J2 are mutually isolated and insulated through the insulating layer, and the gold wire J1 is used for circuit connection. The insulator here is connected to a first perforated microstrip line. The insulator connection can avoid the connection of the box body outside the box body by a feeder line in the traditional method, thereby being beneficial to reducing the volume of the whole module. Further, as shown IN fig. 4, the first local oscillator amplifier 321 shown IN fig. 4 includes a chip CHA3666, where a radio frequency input end (IN end IN the figure) of the chip is electrically connected to an output end of a matching attenuation chip TGL4201 (labeled as F10 IN the figure) through gold, and an input end of the matching attenuation chip TGL4201 is connected to the microstrip line W1 through gold. The radio frequency output end (OUT end in the figure) of the chip CHA3666 is connected with the local oscillator microstrip filter 322 through a gold band, the port P1 of the chip CHA3666 is connected with the ground through a gold wire, and the port P2 of the chip CHA3666 is connected with the ground through a gold wire. The port D1 of the chip CHA3666 is electrically connected to the first capacitor F11 by gold wires, the first capacitor F11 (preferably 100 pF) is electrically connected to the third capacitor F13 (preferably 1000 pF) by two gold wires, and correspondingly, the port D2 of the chip CHA3666 is electrically connected to the second capacitor F12 (preferably 100 pF) by gold wires, and the second capacitor F12 is electrically connected to the third capacitor F13 by two gold wires. The third capacitor F13 is electrically connected with the direct current 4V power supply end F14 through two gold wires. The direct current 4V power supply end is obtained by dividing the generated stable voltage 5V of the first power supply circuit through a power supply branch, and is provided for the chip CHA3666 through the first intermediate frequency cavity.
The first stage rf gain amplifier 325 and the second stage rf gain amplifier 327 in fig. 3 also use the chip CHA3666, and have the same circuit composition as the peripheral circuit of the chip CHA3666 in fig. 4, and will not be described again.
It can be seen that, in fig. 4, the chip CHA3666 is used as a core of the gain amplifier, and the chip includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole gain amplifier is smaller, and the gain amplifier is suitable for the miniaturization requirement. In addition, the chip and the capacitors are connected through the gold wire and the gold belt, and the capacitors are also connected through the gold wire and the gold belt, so that the radio frequency conductivity of the chip and the capacitors in electric connection can be enhanced, and the radio frequency characteristic of gain amplification is ensured.
Further, as shown in fig. 6, for the first local oscillation circuit in the lower cavity, the first local oscillation circuit 410 includes a first frequency synthesizer 413, a first frequency multiplier 414, a first local oscillation amplifier 415, and a first local oscillation filter 416 connected in series in sequence, where the first frequency synthesizer is electrically connected to the first reference source input port, a first reference source input end 4131 (corresponding to the first reference source input port M11 in fig. 1) of the first frequency synthesizer 413 is used to be electrically connected to the external reference source 411, the external reference source 411 inputs a first reference frequency signal to the first frequency synthesizer 413 through the first reference source input end 4131, a digital control interface 4132 of the first frequency synthesizer 413 is correspondingly electrically connected to the first single chip microcomputer 412, the first single chip microcomputer 412 inputs a frequency control parameter to the first frequency synthesizer 413 through the digital control interface 4132, the first frequency multiplier 414 performs frequency doubling on a signal output by the first frequency synthesizer 413 to generate a first signal with a required frequency, and then the first local oscillation filter is performed on the first local oscillation signal by the first frequency synthesizer 415, and then the first local oscillation filter is performed on the first local oscillation signal by the first local oscillation filter.
For the embodiment shown in fig. 6, the external reference source 411 inputs a reference frequency signal to the first frequency synthesizer 413 through the first reference source input end 4131, and the first single chip microcomputer 412 can input a frequency control parameter to the first frequency synthesizer 413 through the nc interface 4132.
By adopting the first local oscillation circuit shown in fig. 6, on one hand, the frequency output by the first frequency synthesizer can be modified in a mode of writing frequency control parameters into the first frequency synthesizer through the first singlechip, so that the first local oscillation circuit can be suitable for application requirements of various frequencies. And the first singlechip can be directly arranged in the first local oscillation circuit, so that the output frequency of the first local oscillation circuit is fixed only by setting the parameters of the frequency control layer of the first singlechip in specific application, and the output frequency can be changed through the first singlechip when local oscillation with other frequencies is needed. On the other hand, the frequency output by the first frequency synthesizer can be increased by 2 times in a frequency multiplication mode, so that the frequency of the first local oscillation signal output by the first local oscillation circuit can be increased by frequency doubling under the condition that the output frequency of the first frequency synthesizer is not high. And after further amplification, the noise waves generated in the front can be filtered by a filter, so that the clean local oscillation frequency is obtained.
The first frequency synthesizer includes a chip ADF4355, the first frequency multiplier includes a chip HMC369, and the first local oscillator amplifier includes a chip CHA3666, as described above, the local oscillator filter is a microstrip filter.
Further, as shown in fig. 7, the first intermediate frequency circuit includes a cascade temperature compensation attenuator 51, a first stage intermediate frequency filter 521, a first stage intermediate frequency amplifier 531, a second stage intermediate frequency amplifier 532, and a second stage intermediate frequency filter 522. The temperature compensation attenuator 51 can compensate gain reduction caused by the first stage intermediate frequency amplifier 531 and the second stage intermediate frequency amplifier 532 in the intermediate frequency circuit in a high temperature environment, the gain reduction value caused by the first intermediate frequency circuit can be determined through high and low temperature experiments, and a proper temperature compensation attenuator can be selected through calculation. Preferably, a matching attenuator 5301 is also provided between the first intermediate frequency amplifier 531 and the second intermediate frequency amplifier 532.
The temperature compensation attenuator 51 is a chip STCA0609N9, the first stage intermediate frequency filter 521 is a chip HFCN-740, and the output end of the chip STCA0609N9 is directly and electrically connected with the input end of the chip HFCN-740. The first intermediate frequency amplifier 531 includes a die UPC3226 and the second stage intermediate frequency amplifier 532 includes die ECG001F-G and is electrically connected at an input of the die ECG001F-G to an output of the die UPC 3226. Preferably, a matching attenuator 5301 is connected in series between the input of the chip ECG001F-G and the output of the chip UPC 3226. Further, the second stage intermediate frequency filter 522 includes a chip LFCN1800 and is electrically connected to the output of the chip ECG001F-G at the input of the chip LFCN 1800. The aforementioned chip HFCN-740 performs high pass filtering, while the chip LFCN1800 performs low pass filtering, thereby limiting the frequency range of the intermediate frequency signal to a desired frequency range.
Preferably, the frequency range of the first intermediate frequency signal input by the first intermediate frequency circuit is 950MHz-1700MHz, the input power is-25 dBm, the output power is 6dBm after twice filtering and twice amplifying, and the twice filtering is low-pass filtering and high-pass filtering respectively, so that clutter is filtered in the frequency range of the intermediate frequency signal. The mode of arranging two amplifiers between the two filters is beneficial to filtering clutter components in a low frequency band, and then the amplification gain is determined by design indexes, for example, a gain value is selected according to the input power of an input first intermediate frequency signal, if the gain of the first amplification is insufficient, two stages of gain amplification are needed, impedance matching is needed before and after the two stages of amplifiers are cascaded, so that a better transmission effect is obtained, and the high-frequency clutter is filtered out by arranging a high-pass filter in the later stage. The chip components selected in the first intermediate frequency circuit have a single chip, can realize the filtering or amplifying function, are small in size, few in pins, simple in peripheral circuit, low in power consumption and capable of supplying power for direct current 5V, and can provide good filtering characteristics and amplifying characteristics for the input first intermediate frequency signals, and the noise coefficient of the channel circuit is low, so that the chip components are suitable for being required by a miniaturized ODU.
Fig. 8 shows a preferred embodiment of the receiving channel module, which comprises a second box body S10 and a box cover covering the second box body, wherein the second box body S10 comprises a second upper cavity and a second lower cavity which are isolated from each other, and the second box cover correspondingly comprises a second upper box cover S111 covering the second upper cavity and a second lower box cover S112 covering the second lower cavity. Preferably, the volume of the entire module is 60mm×50mm×14mm.
Further referring to fig. 9, a second cavity filter 1011 for filtering an rf signal is disposed in the second upper cavity 101, and a second rf signal output 10111 of the second cavity filter 1011 is connected to a second rf circuit 1012, a second if cavity 1013 for receiving a second if circuit, and a second power cavity 1014 for receiving a second power circuit. The second lower cavity 102 is provided with a second local oscillation circuit, and a via hole penetrating through the second lower cavity and entering the second upper cavity is further arranged in the cavity, and a second insulator is arranged through the via hole to connect the output end of the second local oscillation circuit to the second upper cavity. The second intermediate frequency signal generated by mixing the second radio frequency signal output by the second radio frequency circuit 1012 and the second local oscillation signal generated by the second local oscillation circuit in the second lower cavity is connected to the second intermediate frequency circuit.
Further, as shown in fig. 9, the second intermediate frequency chamber 1013 includes three vertical and communicating sub-chambers, wherein the right side is an intermediate frequency first sub-chamber 10131, the middle is an intermediate frequency second sub-chamber 10132, the left side is an intermediate frequency third sub-chamber 10133, the intermediate frequency first sub-chamber 10131 and the intermediate frequency second sub-chamber 10132 are the same in height, and the intermediate frequency third sub-chamber 10133 is higher than the intermediate frequency first sub-chamber 10131 and the intermediate frequency second sub-chamber 10132.
Further, the second cavity filter 1011 is located at the left side of the second upper cavity 101, the second intermediate frequency cavity 1013 is located at the right side of the second cavity filter 1011, the second power supply cavity 1014 is located at the upper sides of the first intermediate frequency cavity 10131 and the second intermediate frequency cavity 10132 of the second intermediate frequency cavity 1013 and is communicated with the intermediate frequency second cavity 10132, the upper edge of the second power supply cavity 1014 is flush with the upper edge of the intermediate frequency third cavity 10133, a second radio frequency signal input port (corresponding to the RF port S121 in fig. 8) is formed on the outer side of the second box body by the second cavity filter 1011, and the second radio frequency signal output end 10111 is disposed at the right side of the lower portion of the second cavity filter 1011 in the second upper cavity 101.
The upper part of the intermediate frequency third cavity 10133 is provided with a second intermediate frequency signal output port (corresponding to an IF port S122 in fig. 8) outwards from the second box body, the upper part of the second power cavity is provided with a second direct current power supply access port (corresponding to a +5v port S124 in fig. 8) outwards from the second box body, the upper part of the second lower cavity is provided with a second reference signal input port (corresponding to a REF port S123 in fig. 8) and a second control signal input port (corresponding to a CTRL port S125 in fig. 8) outwards from the second box body, and the second control signal input port can set a frequency control word to the second local oscillation circuit to control the second local oscillation circuit to generate different local oscillation signal frequencies. In addition, a ground port is also provided, corresponding to GND port S126 in fig. 8. The +5V maximum current of the receiving channel module is 329mA, and the power consumption of the whole module is 1.645W.
Fig. 10 is further elaborated with respect to the second radio frequency circuit 1012 shown in fig. 9. As can be seen from fig. 10, the second radio frequency circuit is electrically connected to the second radio frequency signal output end 10111 by a first microstrip WD1, the other end of the first microstrip WD1 is electrically connected to the first NC1001C-812S low noise amplification chip 213, a 3dB matching attenuator 215 is further connected between the two NC1001C-812S low noise amplification chips 213 and 214 in the circuit in series, and a 3dB matching attenuator 216 is also connected between the output end of the NC1001C-812S low noise amplification chip 214 of the second stage and the input port of the image rejection filter in series. The power terminals of the NC1001C-812S low noise amplifying chips 213, 214 are respectively connected with two independent 5V DC power supply terminals 217, 218. By providing independent 5V dc power supply to the NC1001C-812S low noise amplification chips 213, 214, power supply interference between the two can be avoided to affect the rf power amplification characteristics. The 5V DC supply terminal 217 is connected to a 1000pF capacitor 219,5V DC supply terminal 218 is also connected to a 1000pF capacitor 2110, and the capacitor 219 is further connected to the capacitor 2110, which capacitor 2110 is connected to ground. Preferably, the NC1001C-812S low noise amplification chip 213 is electrically connected to the first microstrip WD1, the NC1001C-812S low noise amplification chip 213 is electrically connected to the matching attenuator 215, the matching attenuator 215 is electrically connected to the NC1001C-812S low noise amplification chip 214, the NC1001C-812S low noise amplification chip 214 is electrically connected to the matching attenuator 216, the NC1001C-812S low noise amplification chip 213 is electrically connected to the 5V dc power supply terminal 217, the NC1001C-812S low noise amplification chip 214 is electrically connected to the 5V dc power supply terminal 218, the 5V dc power supply terminal 217 is electrically connected to the capacitor 219, the 5V dc power supply terminal 218 is electrically connected to the capacitor 2110, the capacitor 219 is electrically connected to the capacitor 2110, and the capacitor 2110 is electrically connected to the ground via at least two wires. Preferably, the diameter of the gold wire is 25um, and the gold wire is electrically connected in the second radio frequency circuit, so that the conductivity of radio frequency signals can be improved, the transmission loss can be reduced, and the cost can be increased, but the radio frequency characteristic of the second radio frequency circuit can be guaranteed.
Further, as shown in fig. 11, the second stage NC1001C-812S low noise amplification chip 214 is electrically connected to the image reject filter 10125. The image rejection filter is a microstrip filter. As shown in fig. 12, the output end of the image rejection filter 10125 is electrically connected to the third stage NC1001C-812S low noise amplification chip through a second microstrip 10126. Preferably, a 3dB attenuator is further connected in series between the image rejection filter 10125 and the second microstrip 10126, and the second microstrip 10126 is a turning microstrip, through which the second radio frequency circuit can be turned from a lateral arrangement of a front stage to a vertical arrangement, so that the entire second radio frequency circuit can be accommodated in a limited space.
As shown in fig. 13, the third stage NC1001C-812S low noise amplification chip is electrically connected to the radio frequency end of the mixing chip NC17111C-725M through a third microstrip 10128. The radio frequency end of the mixing chip (NC 17111C-725M) 101210 is electrically connected to the third microstrip 10128 through a 3dB attenuator, the local oscillator end of the mixing chip 101210 is connected to the output end of the local oscillator filter, and the intermediate frequency end of the mixing chip 101210 is connected to the second intermediate frequency signal input end of the second intermediate frequency cavity through the fifth microstrip 10134.
Further, as shown in fig. 14, the local oscillator signal output end of the second local oscillator circuit located in the second lower cavity is connected to the second upper cavity through a second insulator 10151, and is electrically connected to an amplifying chip CHA3666 through a fourth microstrip 10152 (which is a strip Kong Weidai), that is, an amplifying chip 10153 shown in fig. 14. Preferably, a 3dB attenuator is also connected in series between the two. The output end of the amplifying chip 10153 is connected with a second local oscillation filter 10155. The output end of the amplifying chip CHA3666 is connected with a second local oscillation filter, the second local oscillation filter is connected with the local oscillation end of the mixing chip NC17111C-725M, and the intermediate frequency end of the mixing chip NC17111C-725M is connected to the second intermediate frequency signal input end of the second intermediate frequency cavity through a fifth microstrip. Preferably, the second local oscillator filter 10155 is a microstrip filter. As can also be seen from fig. 14, the two power terminals D1, D2 of the amplifying chip CHA3666 are connected to the 5V voltage terminal 10150, respectively, and these two terminals are connected together to a 1000pF capacitor, which is connected to the microstrip 10154 and then to ground.
The second insulator here is connected to a microstrip line with holes. The insulator connection can avoid the connection of the box body outside the box body by a feeder line in the traditional method, thereby being beneficial to reducing the volume of the whole module. This is the same as the first insulator and will not be described again.
In addition, the first local oscillator filter is a microstrip filter, the first-stage radio frequency filter and the second-stage radio frequency filter are radio frequency microstrip filters with the same structure, and the image rejection filter and the second local oscillator filter are microstrip filters. The microstrip filter can reduce the volume, has small insertion loss and good filtering characteristic. These microstrip filters have similar structures, and only the microstrip filter employed by the image reject filter will be described herein.
As shown in fig. 15, the microstrip filter includes 7U-shaped microstrip strips disposed on a ceramic substrate, the microstrip strips are sequentially arranged at intervals and are distributed in a central symmetry, wherein a first microstrip strip 231 is open downward and is located at a center of symmetry, a second microstrip strip 232 and a third microstrip strip 233 are open upward and are respectively located at left and right sides of the first microstrip strip 231, a fourth microstrip strip 234 is open downward and is located at left sides of the second microstrip strip 232, a fifth microstrip strip 235 is open downward and is located at right sides of the third microstrip strip 233, a sixth microstrip strip 236 is open upward and is located at left sides of the fourth microstrip strip 234, a left branch of the sixth microstrip strip 236 is laterally extended to form a first port 238, a seventh microstrip strip 237 is open upward and is located at right sides of the fifth microstrip strip 235, and a right branch of the seventh microstrip strip 237 is laterally extended to form a second port 239.
Preferably, the width of the first microstrip 231 is 0.1mm, the lengths of the left and right branches are the same and are 2.1mm, the length of the upper connecting branch is 1.13mm, the two corners of the left and right ends of the upper connecting branch are isosceles cut, the lengths of the left and right cut edges are 0.14mm, and the intervals between the first microstrip 231 and the second and third microstrip 232 and 233 are 0.16mm, respectively.
Further preferably, the second and third microwave metal strips 232 and 233 have the same structure, wherein the lengths of the left side branches of the second microwave metal strip 232 and the left side branches of the third microwave metal strip 233 are the same, and are both 2.1mm, the lengths of the right side branches of the second microwave metal strip 232 and the right side branches of the third microwave metal strip 233 are both 2.1mm, the lengths of the lower connecting branches of the second microwave metal strip 232 and the lower connecting branches 33 of the third microwave metal strip 233 are both 1.13mm, and the lengths of the resulting cut edges are the same, and the lengths of the two corners of the left and right ends of the lower connecting branches 23 and the lower connecting branches 33 are all isosceles cut.
The right branch of the second microwave metal strip 232 is flush with the left branch of the first microwave metal strip 231, i.e. the upper edge of the right branch of the second microwave metal strip 232 is flush with the lower edge of the connecting branch corresponding to the upper end of the left branch of the first microwave metal strip 231, while the lower edge of the left branch of the first microwave metal strip 231 is flush with the upper edge of the connecting branch corresponding to the lower end of the right branch of the second microwave metal strip 232. Also, the left side branch of the third strip 233 is flush with the right side branch of the first strip 231.
In addition, the interval between the second microwave metal strip 232 and the fourth microwave metal strip 234 is 0.14mm, and the interval between the third microwave metal strip 233 and the fifth microwave metal strip 235 is 0.14mm.
It is further preferred that the fourth and fifth microwave metal strips 234 and 235 have the same structure and are the same as the first microwave metal strip 231. The lengths of the left branch of the fourth microwave metal belt 234 and the left branch of the fifth microwave metal belt 235 are the same, and are both 2.1mm, the lengths of the right branch of the fourth microwave metal belt 234 and the right branch of the fifth microwave metal belt 235 are the same, and are both 2.1mm, the lengths of the upper connecting branch of the fourth microwave metal belt 234 and the upper connecting branch of the fifth microwave metal belt 235 are the same, and are both 1.13mm, and the two corners of the left end and the right end of the two upper connecting branches are cut off isoscelesly, and the lengths of the two obtained cut edges are the same, and are both 0.14mm. The right side branch of the fourth strip 234 is flush with the left side branch of the second strip 232, and the left side branch of the fifth strip 235 is flush with the right side branch of the third strip 233.
The fourth microwave metal strip 234 is spaced 0.1mm from the sixth microwave metal strip 236, and the fifth microwave metal strip 235 is spaced 0.1mm from the seventh microwave metal strip 237.
Further preferably, the length of the right branch of the sixth microwave metal strip 236 is 2.1mm, the width is 0.1mm, the length of the left branch is 1.3mm, the width is 0.24mm, the bottom connecting branch is divided into two sections, wherein the length of the first connecting section located at the left side is 0.94mm, the width is 0.24mm, and the left corner of the first connecting section is isoscelesly cut, the length of the resulting cut edge is 0.34mm, the length of the second connecting section located at the right side is 0.53mm, the width is 0.1mm, and the length of the resulting cut edge 6321 is 0.14mm. The length of the first port 238 is 1.55mm and the width is 0.25mm, and the distance from the lower edge of the first port 238 to the upper edge of the first connecting section of the bottom connecting branch is 0.1mm.
The seventh microstrip band 237 has the same structure as the sixth microstrip band 236 described above, and is distributed in the microstrip antenna in a laterally symmetrical manner. Wherein the length of the left side branch of the seventh microwave metal strip 237 is 2.1mm, the width is 0.1mm, the length of the right side branch is 1.3mm, the width is 0.24mm, the bottom connecting branch is divided into two sections, wherein the length of the first connecting section located on the right side is 0.94mm, the width is 0.24mm, and the right side corner of the first connecting section is isosceles cut, the length of the resulting cut edge is 0.34mm, the length of the second connecting section located on the left side is 0.53mm, the width is 0.1mm, and the left side corner of the second connecting section is isosceles cut, and the length of the resulting cut edge is 0.14mm. The length of the second port 239 is 1.55mm and the width is 0.25mm, and the distance from the lower edge of the second port 239 to the upper edge of the first connecting section of the bottom connecting branch of the seventh microwave metal strap 237 is 0.1mm. The distance between first port 238 and second port 239 is 12.49mm, i.e., the length of the filter is 12.49mm.
Further preferably, the frequency range of the image rejection filter is 10.7GHz-12.95GHz, the passband insertion loss is less than or equal to 3dB, and the out-of-band rejection is realized: at 7.25GHz-9.8GHz, the inhibition ratio is more than or equal to 60dB, at 10GHz, the inhibition ratio is more than or equal to 40dB, at 13.75GHz-14.5GHz, the inhibition ratio is more than or equal to 40dB, and the VSWR is less than or equal to 1.3.
Based on the above embodiment, the invention discloses a miniaturized ku frequency band ODU module, which comprises a transmitting channel module and a receiving channel module, wherein the transmitting channel module comprises a first box body, and is divided into a first upper cavity and a first lower cavity which are isolated from each other, the first upper cavity is internally provided with a first intermediate frequency cavity, a first radio frequency cavity, a first power supply cavity and a first cavity filter, and the first lower cavity is internally provided with a first local oscillation circuit, and the first local oscillation circuit is connected to the first radio frequency cavity through a first insulator and a first perforated microstrip line; the receiving channel module comprises a second box body, wherein the second box body is divided into a second upper cavity and a second lower cavity which are isolated from each other, a second cavity filter, a second radio frequency cavity, a second intermediate frequency cavity and a second power supply cavity are arranged in the second upper cavity, a second local oscillation circuit is arranged in the second lower cavity, and the second local oscillation circuit is connected to the second radio frequency cavity through a second insulator and a second perforated microstrip line. The ODU module has the advantages of small volume, low power consumption, stability, reliability and wide applicable frequency band range.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the present invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A miniaturized Ku frequency band ODU module, which comprises a transmitting channel module and a receiving channel module, and is characterized in that,
the emission channel module comprises a first box body and a box cover for covering the first box body, wherein the first box body comprises a first upper cavity and a first lower cavity which are isolated from each other;
the first upper cavity is internally provided with a first intermediate frequency cavity for accommodating a first intermediate frequency circuit, a first radio frequency cavity for accommodating a first radio frequency circuit and a first power supply cavity for accommodating a first power supply circuit, the first lower cavity is internally provided with a first local oscillation circuit, the first local oscillation circuit is connected into the first radio frequency cavity through a first insulator and a first microstrip line with holes, the output first local oscillation signal is mixed with a first intermediate frequency signal output by the first intermediate frequency circuit to obtain a first radio frequency signal, and the first radio frequency signal is amplified and filtered by the first radio frequency circuit and then is input into a first cavity filter arranged in the first upper cavity;
The first intermediate frequency cavity is arranged at the left part of the first upper cavity, the first power supply cavity is positioned at the right side of the first intermediate frequency cavity and is in power supply connection with the first intermediate frequency cavity, the first radio frequency cavity is of an inverse L-shaped structure and is positioned at the lower side of the first intermediate frequency cavity and the right side of the first power supply cavity, and the first cavity filter is arranged at the upper part of the first upper cavity and is positioned at the upper sides of the first intermediate frequency cavity, the first power supply cavity and the first radio frequency cavity;
the first radio frequency circuit is divided into a first transverse branch and a first vertical branch, the first transverse branch comprises a first mixer, a first stage radio frequency filter and a first stage radio frequency gain amplifier which are sequentially cascaded, the first vertical branch comprises a second stage radio frequency filter, a second stage radio frequency gain amplifier and a radio frequency power amplifier which are sequentially cascaded, and the first stage radio frequency gain amplifier is electrically connected with the second stage radio frequency filter through a first turning microstrip line; the receiving channel module comprises a second box body and a box cover for covering the second box body, and the second box body comprises a second upper cavity and a second lower cavity which are isolated from each other;
A second cavity filter for filtering the input second radio frequency signal is arranged in the second upper cavity, a second radio frequency signal output end of the second cavity filter is connected with a second radio frequency circuit, a second intermediate frequency cavity for accommodating a second intermediate frequency circuit and a second power supply cavity for accommodating a second power supply circuit, and a second local oscillation circuit is arranged in the second lower cavity;
and a second intermediate frequency signal generated after mixing the second radio frequency signal output by the second radio frequency circuit and the second local oscillation signal generated by the second local oscillation circuit is connected to the second intermediate frequency circuit.
2. The miniaturized Ku-band ODU module of claim 1 wherein a first power supply port, a first reference source input port, a first intermediate frequency signal input port are provided on an outer wall of the first box on a left side adjacent to the first intermediate frequency cavity, and a first radio frequency signal output port is provided on an outer wall of the first box on an upper side adjacent to the first cavity filter; the first power port is electrically connected to the first power circuit in the first power cavity, the first reference source input port is electrically connected to the first local oscillator circuit, the first intermediate frequency signal input port is electrically connected to the first intermediate frequency circuit of the first intermediate frequency cavity, and the first radio frequency signal output port is communicated with the first cavity filter.
3. The miniaturized Ku-band ODU module of claim 2 wherein the first local oscillation circuit includes a first frequency synthesizer, a first frequency multiplier, a first local oscillation amplifier, and a first local oscillation filter that are sequentially connected in series, the first frequency synthesizer is electrically connected to the first reference source input port, an external reference source inputs a first reference frequency signal to the first frequency synthesizer through the first reference source input port, a first numerical control interface of the first frequency synthesizer is correspondingly electrically connected to a first singlechip, the first singlechip inputs a frequency control parameter to the first frequency synthesizer through the first numerical control interface, the first frequency multiplier multiplies a signal output by the first frequency synthesizer to generate a first local oscillation signal of a required frequency, then the first local oscillation signal is power-amplified by the first local oscillation amplifier, and then the first local oscillation signal is suppressed and filtered by the first local oscillation filter;
the first radio frequency cavity comprises a first perforated microstrip line connected with the output end of the first frequency multiplier, wherein the perforated end is electrically connected with the output end of the first frequency multiplier positioned in the first lower cavity through the first insulator, the other end of the first radio frequency cavity is electrically connected with the input end of the first local oscillator amplifier, the output end of the first local oscillator amplifier is electrically connected with the first local oscillator filter, and the output end of the first local oscillator filter is electrically connected with the first mixer.
4. The miniaturized Ku-band ODU module of claim 3 wherein the first intermediate frequency circuit comprises a temperature compensation attenuator, a first stage intermediate frequency filter, a first stage intermediate frequency amplifier, a second stage intermediate frequency amplifier, and a second stage intermediate frequency filter that are cascaded in sequence, the second stage intermediate frequency filter being electrically connected to the first mixer.
5. The miniaturized Ku-band ODU module of claim 4 wherein the first local oscillator filter is a microstrip filter, and the first stage rf filter and the second stage rf filter are rf microstrip filters having the same structure.
6. The miniaturized Ku-band ODU module of claim 1 wherein the second intermediate frequency cavity comprises three vertical and communicating subchambers, wherein the right side is an intermediate frequency first subchamber, the middle is an intermediate frequency second subchamber, the left side is an intermediate frequency third subchamber, the intermediate frequency first subchamber and the intermediate frequency second subchamber are at the same height, and the intermediate frequency third subchamber is at a height higher than the intermediate frequency first subchamber and the intermediate frequency second subchamber; the second cavity filter is located the left side of second upper portion cavity, the second intermediate frequency chamber is located the right side of second cavity filter, the second power supply chamber is located the first intermediate frequency chamber in second intermediate frequency chamber and the upside in second intermediate frequency chamber, and with intermediate frequency second divides the chamber intercommunication, the upper edge in second power supply chamber with the upper edge equal height parallel and level in intermediate frequency first branch chamber, second cavity filter has offered the second radio frequency signal input port to the outside on the second box body outside, the second radio frequency signal output end sets up the second cavity filter is in the lower part right side in the second upper portion cavity.
7. The miniaturized Ku-band ODU module of claim 6, wherein the second radio-frequency circuit includes a first microstrip electrically connected to the second radio-frequency signal output end, the other end of the first microstrip is electrically connected to a first stage NC1001C-812S low-noise amplification chip and a second stage NC1001C-812S low-noise amplification chip that are connected in series in two stages, the second stage NC1001C-812S low-noise amplification chip is electrically connected to an image rejection filter backwards, an output end of the image rejection filter is electrically connected to a third stage NC1001C-812S low-noise amplification chip through the second microstrip, and the third stage NC1001C-812S low-noise amplification chip is electrically connected to a radio-frequency end of the mixer chip NC17111C-725M backwards through a third microstrip; the second microstrip is an arc microstrip, and the transverse arrangement of the second radio frequency circuit is changed into vertical arrangement.
8. The miniaturized Ku-band ODU module of claim 7 wherein a second local oscillator signal output of the second local oscillator circuit located in the second lower cavity is connected to the second upper cavity through a second insulator, and is electrically connected to the amplifying chip CHA3666 through a fourth microstrip with a hole, and an output of the amplifying chip CHA3666 is connected to a second local oscillator filter, and the second local oscillator filter is connected to a local oscillator end of the mixing chip NC17111C-725M, and an intermediate frequency end of the mixing chip NC17111C-725M is connected to a second intermediate frequency signal input end of the second intermediate frequency cavity through a fifth microstrip.
9. The miniaturized Ku-band ODU module of claim 8 wherein the image reject filter and the second local oscillator filter are microstrip filters.
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| CN111010224B (en) * | 2019-12-26 | 2021-02-02 | 中国科学院国家空间科学中心 | S-band satellite communication terminal for offshore mobile platform |
| CN113285748B (en) * | 2021-04-07 | 2022-12-30 | 上海利正卫星应用技术有限公司 | Miniature radio frequency front-end device of satellite-borne communication system |
| CN114204956B (en) * | 2021-12-08 | 2023-06-16 | 江苏屹信航天科技有限公司 | Miniaturized multifrequency section communication all-in-one |
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