CN109120302A - A kind of miniaturization ku frequency range ODU module - Google Patents
A kind of miniaturization ku frequency range ODU module Download PDFInfo
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- CN109120302A CN109120302A CN201811189709.5A CN201811189709A CN109120302A CN 109120302 A CN109120302 A CN 109120302A CN 201811189709 A CN201811189709 A CN 201811189709A CN 109120302 A CN109120302 A CN 109120302A
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a kind of miniaturization ku frequency range ODU modules, including transmission channel module and receiving channel module, transmission channel module includes the first box body, it is divided into the first upper chamber and the first lower cavity being isolated from each other, the first intermediate frequency chamber, the first radio-frequency cavity, the first power source cavity and the first cavity body filter are provided in first upper chamber, it is provided with the first local oscillation circuit in first lower cavity, the first radio-frequency cavity is connected to by the first insulator and the first microstrip line with holes；Receiving channel module includes the second box body, it is divided into the second upper chamber and the second lower cavity being isolated from each other, second cavity body filter, the second radio-frequency cavity, the second intermediate frequency chamber and second source chamber are set in the second upper chamber, it is provided with the second local oscillation circuit in second lower cavity, the second radio-frequency cavity is connected to by the second insulator and the second microstrip line with holes.The ODU module has advantage small in size, low in energy consumption, reliable and stable and that applicable band range is wide.
Description
Technical field
The invention belongs to fields of communication technology, more particularly to a kind of miniaturization ku frequency range ODU module.
Background technique
In satellite communication equipment, ODU (Out-door Unit) refers to outdoor unit, mainly includes frequency transformation and function
Rate amplification, specific to be divided into transmission channel and receiving channel again, transmission channel typically refers to BUC (Block Up-
Converter), i.e., up-conversion radio-frequency power amplifier, receiving channel are primarily referred to as LNB (Low Noise Block down-
Converter), i.e. low noise amplification, frequency converter.
In satellite-based communications equipment, due to being limited by space, ODU mainly occurs in the form of comprising modules, has mark
The interface and volume weight of standardization.In the prior art, for the ODU module of ku frequency range, there are volumes greatly, weight weight, and
And external interface is more, working performance is unreliable, and the transformation of the channel frequence of realization is also relatively simple, for example transmission channel module and connects
Receive channel module local frequency be it is fixed nonadjustable, therefore, it is difficult to meet the multiduty application demand of miniaturization.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of miniaturization ku frequency range ODU modules, solve in the prior art
The problems such as spaceborne ODU module volume is big, internal structure is unreasonable, working performance is unstable reliable.
In order to solve the above technical problems, the technical solution adopted by the present invention is that provide a kind of miniaturization ku frequency range ODU module,
Including transmission channel module and receiving channel module, the transmission channel module includes the first box body, first tray interior
Including the first upper chamber and the first lower cavity being isolated from each other；It is provided in first upper chamber in receiving first
First intermediate frequency chamber of frequency circuit accommodates the first radio-frequency cavity of the first radio circuit, and accommodates the first electricity of the first power circuit
Source chamber, is provided with the first local oscillation circuit in first lower cavity, first local oscillation circuit by the first insulator and
First microstrip line with holes is connected in first radio-frequency cavity, and the first local oscillation signal of output and first intermediate-frequency circuit export
The first intermediate-freuqncy signal mixing obtain the first radiofrequency signal, first radiofrequency signal passes through the amplification of the first radio circuit again
After filtering, it is input to the first cavity body filter being arranged in first upper chamber；The receiving channel module includes
Second box body, second tray interior include the second upper chamber and the second lower cavity being isolated from each other；Described second
The second cavity body filter being filtered to the second radiofrequency signal of input, the second cavity filtering are provided in upper chamber
Second RF signal output of device connects the second radio circuit, accommodates the second intermediate frequency chamber of the second intermediate-frequency circuit, and accommodate
The second source chamber of second source circuit is provided with the second local oscillation circuit in second lower cavity；Second radio frequency
Second radiofrequency signal of circuit output generated after being mixed with the second local oscillation signal that second local oscillation circuit generates second in
Frequency signal is linked into second intermediate-frequency circuit.
In present invention miniaturization another embodiment of ku frequency range ODU module, the first intermediate frequency chamber is set to described first
The left part of upper chamber, first power source cavity is located at the right side of the first intermediate frequency chamber, and powers with the first intermediate frequency chamber
Connection, first radio-frequency cavity is reverse L type structure, positioned at the downside of the first intermediate frequency chamber and the right side of first power source cavity
Side, first cavity body filter are set to the top of first upper chamber, and in the first intermediate frequency chamber, the first power supply
The upside of chamber and the first radio-frequency cavity；The outer wall of first box body in the left side adjacent with the first intermediate frequency chamber is provided with
One power port, the first reference source input port, the first signal input end of intermediate frequency mouth, and with first cavity body filter
The outer wall of first box body of adjacent upside is provided with the first RF signal output mouth；First power port is electrically connected
First power circuit being connected in first power source cavity, the first reference source input port are electrically connected to described first
Local oscillation circuit, the first signal input end of intermediate frequency mouth are electrically connected to first intermediate-frequency circuit of the first intermediate frequency chamber, institute
The first RF signal output mouth is stated to be connected to first cavity body filter.
In present invention miniaturization another embodiment of ku frequency range ODU module, first radio circuit is divided into first laterally
Branch and the first vertical branch, first transverse legs include successively cascade first frequency mixer, first order radio-frequency filter,
First order rf gain amplifier, the first vertical branch include successively cascade second level radio-frequency filter, and the second level is penetrated
Frequency gain amplifier and radio-frequency power amplifier lead between the first order rf gain amplifier and second level radio-frequency filter
Cross the first turning microstrip line electrical connection.
In present invention miniaturization another embodiment of ku frequency range ODU module, first local oscillation circuit includes being sequentially connected in series
First frequency synthesizer, the first frequency multiplier, first vibration magnifier and the first local oscillator filter, the first frequency synthesizer
It is electrically connected with the first reference source input port, external reference source passes through the first reference source input port to described first
Frequency synthesizer inputs the first reference frequency signal, the corresponding electrical connection first of the first numerical control interface of the first frequency synthesizer
Single-chip microcontroller, the first singlechip input frequency control ginseng to the first frequency synthesizer by the first numerical control interface
Number, first frequency multiplier carry out the first of frequency needed for two frequencys multiplication generate to the signal that the first frequency synthesizer exports
Shake signal, then carries out power amplification to the first local oscillation signal by first vibration magnifier, then by first local oscillator filter
Inhibition filtering is carried out to first local oscillation signal；It include the output end for connecting first frequency multiplier in first radio-frequency cavity
The described first microstrip line with holes, wherein with nose end via first insulator be located at first lower cavity described in
The output end of first frequency multiplier is electrically connected, and the other end is electrically connected the input terminal of the first vibration magnifier, first local oscillator
The output end of amplifier is electrically connected first local oscillator filter, and the output end of first local oscillator filter is mixed with described first
The electrical connection of frequency device.
In present invention miniaturization another embodiment of ku frequency range ODU module, first intermediate-frequency circuit includes successively cascading
Temperature compensation attenuator, first order intermediate-frequency filter, first order intermediate frequency amplifier, second level intermediate frequency amplifier and the second level intermediate frequency filter
Wave device, the second level intermediate-frequency filter are electrically connected with first frequency mixer.
In present invention miniaturization another embodiment of ku frequency range ODU module, first local oscillator filter is micro-strip filtering
Device, the first order radio-frequency filter and second level radio-frequency filter are the identical radio frequency microstrip filter of structure.
In present invention miniaturization another embodiment of ku frequency range ODU module, the second intermediate frequency chamber includes vertical and is connected to
Three points of chambers, wherein right side is that intermediate frequency first divides chamber, centre is that intermediate frequency second divides chamber, and left side is that intermediate frequency third divides chamber, described
Intermediate frequency first divides chamber and intermediate frequency second to divide chamber height identical, and the intermediate frequency third divides the height of chamber to be higher than the intermediate frequency first and divides chamber
Divide chamber with intermediate frequency second；Second cavity body filter is located at the left side of second upper chamber, the second intermediate frequency chamber position
In the right side of second cavity body filter, the second source chamber is located at frequency division chamber and in the first of the second intermediate frequency chamber
The upside of frequency division chamber in two, and divide chamber to be connected to the intermediate frequency second, the top edge of the second source chamber and the intermediate frequency the
The top edge of one point of chamber is contour concordant, and second cavity body filter is believed the second radio frequency is offered on external second box portion outside
Number input port, the second RF signal output setting are intracorporal in second upper chambers in second cavity body filter
On the right side of lower part.
In present invention miniaturization another embodiment of ku frequency range ODU module, second radio circuit includes and described the
First micro-strip of two RF signal outputs electrical connection, the first order of the other end electrical connection two-stage series connection of first micro-strip
NC1001C-812S low noise amplification chip and second level NC1001C-812S low noise amplification chip, the second level NC1001C-
812S low noise amplification chip is electrically connected image-reject filter backward, and the output end of the image-reject filter is micro- by second
Band electrical connection third level NC1001C-812S low noise amplification chip, the third level NC1001C-812S low noise amplification chip is backward
The radio-frequency head of mixing chip NC17111C-725M is electrically connected by third micro-strip；Second micro-strip is curved arc shape micro-strip, by institute
State the second radio circuit switched to by the lateral setting of prime it is vertically arranged.
The present invention miniaturization another embodiment of ku frequency range ODU module in, in second lower cavity described in
Second local oscillation signal output end of the second local oscillation circuit is linked into second upper chamber by the second insulator, passes through band
4th micro-strip in hole is electrically connected amplification chip CHA3666, and the output end of the amplification chip CHA3666 connects the filtering of the second local oscillator
Device, second local oscillator filter connect the local oscillator end of the mixing chip NC17111C-725M, the mixing chip
The intermediate frequency end of NC17111C-725M is linked into the second signal input end of intermediate frequency of the second intermediate frequency chamber by the 5th micro-strip.
In present invention miniaturization another embodiment of ku frequency range ODU module, the image-reject filter and described second
Local oscillator filter is microstrip filter.
The beneficial effects of the present invention are: the invention discloses a kind of miniaturization ku frequency range ODU module, including transmission channel mould
Block and receiving channel module, transmission channel module include the first box body, are divided under the first upper chamber and first being isolated from each other
Portion's cavity is provided with the first intermediate frequency chamber, the first radio-frequency cavity, the first power source cavity and the first cavity body filter in the first upper chamber,
It is provided with the first local oscillation circuit in first lower cavity, the first radio frequency is connected to by the first insulator and the first microstrip line with holes
Chamber；Receiving channel module includes the second box body, is divided into the second upper chamber and the second lower cavity being isolated from each other, the second top
Second cavity body filter, the second radio-frequency cavity, the second intermediate frequency chamber and second source chamber are set in cavity, are arranged in the second lower cavity
There is the second local oscillation circuit, the second radio-frequency cavity is connected to by the second insulator and the second microstrip line with holes.The ODU module has body
The advantage that product is small, low in energy consumption, reliable and stable and applicable band range is wide.
Detailed description of the invention
Fig. 1 is transmission channel module composition schematic diagram in present invention miniaturization one embodiment of ku frequency range ODU module；
Fig. 2 is the first upper chamber composition schematic diagram in present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 3 is the first upper chamber circuit composition schematic diagram in present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 4 is that the first upper chamber circuit part composition shows in present invention miniaturization another embodiment of ku frequency range ODU module
It is intended to；
Fig. 5 is the insulator structure composition figure of present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 6 is the first local oscillator microcircuit composition block diagram of present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 7 is the first intermediate-frequency circuit composition schematic diagram of present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 8 is the receiving channel module composition schematic diagram of present invention miniaturization another embodiment of ku frequency range ODU module；
Fig. 9 is the second upper chamber circuit composition schematic diagram of present invention miniaturization another embodiment of ku frequency range ODU module；
Figure 10 is that the second upper chamber partial circuit composition of present invention miniaturization another embodiment of ku frequency range ODU module shows
It is intended to；
Figure 11 is that the second upper chamber partial circuit composition of present invention miniaturization another embodiment of ku frequency range ODU module shows
It is intended to；
Figure 12 is that the second upper chamber partial circuit composition of present invention miniaturization another embodiment of ku frequency range ODU module shows
It is intended to；
Figure 13 is that the second upper chamber partial circuit composition of present invention miniaturization another embodiment of ku frequency range ODU module shows
It is intended to；
Figure 14 is that the second upper chamber partial circuit composition of present invention miniaturization another embodiment of ku frequency range ODU module shows
It is intended to；
Figure 15 is the microstrip filter composite structural diagram of present invention miniaturization another embodiment of ku frequency range ODU module.
Specific embodiment
To facilitate the understanding of the present invention, in the following with reference to the drawings and specific embodiments, the present invention will be described in more detail.
A better embodiment of the invention is given in the attached drawing.But the invention can be realized in many different forms, and unlimited
In this specification described embodiment.On the contrary, purpose of providing these embodiments is makes to the disclosure
Understand more thorough and comprehensive.
It should be noted that unless otherwise defined, all technical and scientific terms used in this specification with belong to
The normally understood meaning of those skilled in the art of the invention is identical.Used term in the description of the invention
It is the purpose in order to describe specific embodiment, is not intended to the limitation present invention.
With reference to the accompanying drawing, various embodiments of the present invention are described in detail.For minimizing Ku frequency range ODU module,
It mainly include transmission channel module and receiving channel module.Fig. 1 is one embodiment composition schematic diagram of transmission channel module.Such as Fig. 1
Shown, the transmission channel module includes the box cover that the first box body M1 and lid close the first box body M1, first box body
It include the first upper chamber and the first lower cavity being isolated from each other inside M1, the corresponding box cover includes that lid closes on described first
The the first upper box cover M21 and lid of portion's cavity close the first lower casing M22 of first lower cavity.Preferably, entire transmitting is logical
The volume of road module is 60mm × 50mm × 14mm.
Further combined with Fig. 2, the first intermediate frequency for accommodating the first intermediate-frequency circuit is provided in the first upper chamber M3
Chamber M31 accommodates the first radio-frequency cavity M32 of the first radio circuit, and accommodates the first power source cavity M33 of the first power circuit.?
The first local oscillation circuit is provided in first lower cavity, first local oscillation circuit is connected by insulator and microstrip line with holes
It is connected in first radio-frequency cavity, the first intermediate-freuqncy signal of the first local oscillation signal of output and first intermediate-frequency circuit output passes through
It crosses mixing and obtains the first radiofrequency signal, it is defeated after first radiofrequency signal passes through the amplification and filtering of the first radio circuit again
Enter to the first cavity body filter M34 being arranged in the first upper chamber M3.
Further, as shown in Fig. 2, the first intermediate frequency chamber M31 is set to the left part of the first upper chamber M3, institute
The right side that the first power source cavity M33 is located at the first intermediate frequency chamber M31 is stated, and with the first intermediate frequency chamber for being electrically connected, described
One radio-frequency cavity M32 is reverse L type structure, positioned at the downside of the first intermediate frequency chamber M31 and the right side of the first power source cavity M33,
The first cavity body filter M34 is set to the top of the first upper chamber M3, and in the first intermediate frequency chamber M31,
The upside of one power source cavity M33 and the first radio-frequency cavity M32.This topology layout enables in limited volume, can be reasonable
Divide each functional module, avoid interfering with each other, ensure that good Electro Magnetic Compatibility.
Further, combined with Figure 1 and Figure 2, in first box body in the left side adjacent with the first intermediate frequency chamber M31
Outer wall is provided with the first power port, and first power port includes direct current 5V power port M101 and direct current 6V power port
M102, the first reference source input port M11, the first signal input end of intermediate frequency mouth M12, and with first cavity body filter
The outer wall of first box body of adjacent upside is provided with the first RF signal output mouth M13；First power port
First power circuit being electrically connected in the first power source cavity M33, the first reference source input port M11 electrical connection
First local oscillation circuit into first lower cavity, the first signal input end of intermediate frequency mouth M12 are electrically connected to institute
First intermediate-frequency circuit of the first intermediate frequency chamber M31 is stated, the first RF signal output mouth M13 and first cavity are filtered
Wave device M34 connection.The direct current 6V maximum current of the transmission channel module has 1.8A, power consumption 10.8W, and direct current 5V maximum current has
533mA, power consumption 2.665W, the power consumption of entire module are 13.465W.
Further, as shown in figure 3, showing further the circuit composition inside the first radio-frequency cavity on the basis of Fig. 2,
A part of circuit of the first local oscillation circuit is wherein further comprised, this is because the first local oscillation circuit another part is located under first
In portion's cavity.Preferably, the first local oscillation circuit includes the first frequency synthesizer, the first frequency multiplier, the first local oscillator being sequentially connected in series
Amplifier and the first local oscillator filter, the first frequency synthesizer are electrically connected with the first reference source input port, external
Reference source inputs the first reference frequency signal to the first frequency synthesizer by the first reference source input port, described
First frequency multiplier carries out the first local oscillation signal of frequency needed for two frequencys multiplication generate to the signal that the first frequency synthesizer exports.
Here, first frequency synthesizer and the first frequency multiplier are located in the first lower cavity, first vibration magnifier and first vibration filter
Wave device is located in the first radio-frequency cavity of the first upper chamber.First vibration magnifier carries out power amplification to the first local oscillation signal,
Inhibition filtering is carried out to first local oscillation signal by first local oscillator filter again.In order to the first frequency multiplier is generated
One local oscillation signal is input in the first frequency mixer of the first radio circuit, and by volumetric constraint, is just worn using the first insulator
The mode of wall establishes electrical connection between the first upper chamber and the first lower cavity.The first local oscillator electricity in the first radio-frequency cavity
Road includes first vibration magnifier 321 and the first local oscillator filter 322, shows that the first insulator is with holes micro- by first in figure
It is electrically connected with line W1 with the input terminal of first vibration magnifier 321.The first radio circuit in the first radio-frequency cavity is divided into first
Transverse legs and the first vertical branch, first transverse legs include successively cascade first frequency mixer 323, first order radio frequency
Filter 324, first order rf gain amplifier 325, the first vertical branch include successively cascade second level radio frequency filter
Wave device 326, second level rf gain amplifier 327 and radio-frequency power amplifier 328, first order rf gain amplifier 325 with
By the first turning microstrip line W0 electrical connection between second level radio-frequency filter 326, second level rf gain amplifier 327 and penetrate
Frequency power amplifier 328 is electrically connected by microstrip line W2, and radio-frequency power amplifier 328 and the first cavity body filter 34 pass through micro-strip
Line W3 electrical connection.The first order radio-frequency filter 324 and second level radio-frequency filter 326 are the identical radio frequency microstrip filter of structure
Wave device.
The composition of the first local oscillation circuit and the first radio circuit in the first radio-frequency cavity of detailed description below, and with first
Circuit connecting relation between intermediate frequency chamber and the first power source cavity.
As shown in figure 4, including the microstrip line W1 for connecting the first local oscillator circuit output end, institute in first radio-frequency cavity
Stating microstrip line W1 is the first microstrip line with holes, wherein band nose end passes through under the first upper chamber and first via the first insulator
Metallic walls between portion's cavity are electrically connected with the output end for first frequency multiplier for being located at first lower cavity, described
The input terminal of the other end electrical connection first vibration magnifier 321 of microstrip line W1, the output end of the first vibration magnifier 321
It is electrically connected the first local oscillator filter 322, first local oscillator filter 322 is microstrip filter.
Here, the structure of the first insulator is as shown in figure 5, include cylindrical metal outer wall J2, insulating layer J3 and spun gold J1.
The surface layer of metal outer wall J2 be it is gold-plated, punched in the metallic walls between two cavitys, then by the insulator be inserted into via hole
And weld metal outer wall and via hole, make spun gold J1 and the mutually isolated insulation of metal outer wall J2 again by insulating layer, and spun gold
J1 is then used for circuit connection.Here insulator connection is the first microstrip line with holes.It can be to avoid biography by insulator connection
It is attached in box portion outside by feeder line in system method, is conducive to the volume for reducing integral module.Further, such as Fig. 4 institute
Show, the first vibration magnifier 321 shown in Fig. 4 includes chip CHA3666, wherein rf inputs (the IN in figure of the chip
End) pass through the output end of gold ribbon electrical connection matching attenuation chip TGL4201 (F10 is denoted as in figure), matching attenuation chip
The input terminal of TGL4201 connects the microstrip line W1 by gold ribbon.The RF output end (OUT terminal in figure) of chip CHA3666
Local oscillator microstrip filter 322 is connected by gold ribbon, the port P1 of chip CHA3666 passes through spun gold grounding connection, chip CHA3666
Port P2 pass through spun gold grounding connection.The port D1 of the chip CHA3666 is electrically connected by spun gold with first capacitor F11,
The first capacitor F11 (preferably 100pF) is electrically connected by two spun golds with third capacitor F13 (preferably 1000pF), corresponding,
The port D2 of the chip CHA3666 is electrically connected by spun gold with the second capacitor F12 (preferably 100pF), the second capacitor F12
It is electrically connected by two spun golds with third capacitor F13.The third capacitor F13 passes through two spun golds and direct current 4V power supply end
F14 electrical connection.Direct current 4V power supply end is to be divided by the pressure stabilizing 5V of the generation of the first power circuit by power supply branch
It arrives, and is supplied to chip CHA3666 via the first intermediate frequency chamber.
First order rf gain amplifier 325 and second level rf gain amplifier 327 in Fig. 3 also use chip
Chip CHA3666 peripheral circuit circuit composition having the same in CHA3666, with Fig. 4, repeats no more.
As can be seen that using chip CHA3666 in Fig. 4 is core as gain amplifier, also wrapped other than the chip
Above-mentioned patch capacitor is included, these capacitors occupy lesser volume, so that the volume of entire gain amplifier is also smaller, adapt to
The demand of miniaturization.In addition, connected by spun gold and gold ribbon between chip and these capacitors and capacitor also by spun gold and
Gold ribbon electrical connection, can enhance the Conducted Radio Frequency that the chip is electrically connected with these capacitors, ensure that the radio frequency of gain amplification is special
Property.
Further, for the first local oscillation circuit in lower cavity, as shown in fig. 6, first local oscillation circuit
410 include first frequency synthesizer 413, the first frequency multiplier 414, first vibration magnifier 415 and the first local oscillator being sequentially connected in series
Filter 416, the first frequency synthesizer are electrically connected with the first reference source input port, the first frequency synthesizer
413 the first reference source input terminal 4131 (the first reference source input port M11 in corresponding diagram 1) is used for and external reference source 411
Electrical connection, the external reference source 411 are defeated to the first frequency synthesizer 413 by the first reference source input terminal 4131
Enter the first reference frequency signal, the corresponding electrical connection first singlechip of the numerical control interface 4132 of the first frequency synthesizer 413
412, the first singlechip 412 inputs frequency to the first frequency synthesizer 413 by the numerical control interface 4132 and controls
Parameter, first frequency multiplier 414 carry out frequency needed for two frequencys multiplication generate to the signal that the first frequency synthesizer 413 exports
The first local oscillation signal, power amplification then is carried out to the first local oscillation signal by first vibration magnifier 415, then by described first
Local oscillator filter 416 in first local oscillation signal fundamental wave and triple-frequency harmonics carry out inhibition filtering.
For embodiment shown in fig. 6, the external reference source 411 passes through the first reference source input terminal 4131 to institute
State 413 input reference frequency signal of first frequency synthesizer, the first singlechip 412 can be to described by numerical control interface 4132
First frequency synthesizer 413 inputs frequency control parameters.
Using the first local oscillation circuit shown in fig. 6, on the one hand can be write by first singlechip to first frequency synthesizer
The frequency that the mode for entering frequency control parameters exports the first frequency synthesizer has alterability, therefore first local oscillator
Circuit can be adapted for the application demand of multi-frequency.And first singlechip can be arranged directly in the first local oscillation circuit,
In a particular application only need to by the frequency control layer parameter setting of first singlechip it is good after can remain unchanged, and make this first
The output frequency of local oscillation circuit is fixed, and when the local oscillator of other frequencies in need generates, this can pass through first singlechip again
It is modified.On the other hand, the frequency for enabling to first frequency synthesizer to export by way of frequency multiplication improves 2 times, in this way
In the case where first frequency synthesizer output frequency is not high, the of the output of the first local oscillation circuit can be improved by two frequencys multiplication
The frequency of one local oscillation signal.And further by amplification and then through wave filter, all kinds of clutters that front can be generated are filtered
It removes, obtains clean local frequency.
The first frequency synthesizer includes chip ADF4355, and first frequency multiplier includes chip HMC369, first
Vibration magnifier includes chip CHA3666, as previously mentioned, local oscillator filter is microstrip filter.
Further, as shown in fig. 7, the first intermediate-frequency circuit includes and cascade temperature compensation attenuator 51, first order intermediate frequency
Filter 521, first order intermediate frequency amplifier 531, second level intermediate frequency amplifier 532, second level intermediate-frequency filter 522.The temperature compensation
Attenuator 51 can compensate first order intermediate frequency amplifier 531 in intermediate-frequency circuit and second level intermediate frequency amplifier 532 in high temperature ring
Caused gain decline in border can be tested by high/low temperature and determine gain drop-out value caused by the first intermediate-frequency circuit, led to
Calculating is crossed to select suitable temperature compensation attenuator.Preferably, the first intermediate frequency amplifier 531 and the second intermediate frequency amplifier 532 it
Between be additionally provided with matched attenuator 5301.
The temperature compensation attenuator 51 is chip STCA0609N9, and the first order intermediate-frequency filter 521 is chip HFCN-
740, the output end of the chip STCA0609N9 is directly electrically connected with the input terminal of the chip HFCN-740.In described first
Audio amplifier 531 includes chip UPC3226, and the second level intermediate frequency amplifier 532 includes chip ECG001F-G, and in institute
The input terminal for stating chip ECG001F-G is electrically connected with the output end of the chip UPC3226.Preferably, the chip
Matched attenuator 5301 is serially connected between the input terminal of ECG001F-G and the output end of the chip UPC3226.Further,
The second level intermediate-frequency filter 522 include chip LFCN1800, and the input terminal of the chip LFCN1800 with it is described
The output end of chip ECG001F-G is electrically connected.Chip HFCN-740 above-mentioned carries out high-pass filtering, and by chip LFCN1800 into
Row low-pass filtering, so that frequency range of the intermediate-frequency circuit to intermediate-freuqncy signal is limited in a required frequency range.
Preferably, the frequency range of the first intermediate-freuqncy signal of the input of first intermediate-frequency circuit is 950MHz-1700MHz,
Input power is -25dBm, by filter twice and twice amplify after, the power of output is 6dBm, and filters twice and be respectively
Low-pass filtering and high-pass filtering, so that having filtered out clutter in the frequency range of the intermediate-freuqncy signal.And by this at two
The mode of two amplifiers is set between filter, is conducive to first filter out the clutter ingredient of low-frequency range, then be put by level-one
Greatly or two-stage cascade amplification, the gain of this amplification are to be determined by design objective, such as believed according to the first intermediate frequency of input
Number input power size select yield value, if the gain of level-one amplification is inadequate, two stage gains is needed to amplify, two-stage is put
Front and back is needed to want impedance matching when big device cascade, to obtain better laser propagation effect, and rear stage passes through setting high-pass filtering again
Device then filters out high frequency spurs.Chip component selected in above first intermediate-frequency circuit have monolithic can be realized filtering or
Enlarging function, it is small in size, pin is few, peripheral circuit is simple, low in energy consumption and be direct current 5V power supply, and can be the of input
One intermediate-freuqncy signal provides good filtering characteristic and amplification characteristic, and the noise coefficient of channel circuit is low, adapts to miniaturization ODU institute
It needs.
Fig. 8 shows receiving channel module preferred embodiment, closes second box body including the second box body S10 and lid
Box cover, the inside the second box body S10 includes the second upper chamber and the second lower cavity being isolated from each other, second box cover
Corresponding includes the second lower box that the second upper box cover S111 of lid conjunction second upper chamber and lid close second lower cavity
Cover S112.Preferably, the volume of entire module is 60mm × 50mm × 14mm.
Further combined with Fig. 9, the second chamber being filtered to radiofrequency signal is provided in second upper chamber 101
Second RF signal output 10111 of fluid filter 1011, second cavity body filter 1011 connects the second radio circuit
1012, the second intermediate frequency chamber 1013 for receiving the second intermediate-frequency circuit is accommodated, and accommodate the second source chamber of second source circuit
1014.Be provided with the second local oscillation circuit in second lower cavity 102, be additionally provided in the cavity pass through the second lower cavity and into
The via hole for entering the second upper chamber is arranged the second insulator by the via hole and connects the output end of the second local oscillation circuit on second
In portion's cavity.Second local oscillator in the second radiofrequency signal and the second lower cavity that second radio circuit 1012 exports
The second intermediate-freuqncy signal that the second local oscillation signal that circuit generates generates after being mixed is linked into second intermediate-frequency circuit.
Further, as shown in figure 9, the second intermediate frequency chamber 1013 includes vertical and connection three points of chambers, wherein right
Side is that intermediate frequency first divides chamber 10131, and centre is that intermediate frequency second divides chamber 10132, and left side is that intermediate frequency third divides chamber 10133, it is described in
Frequently first point of chamber 10131 and intermediate frequency second divide 10132 height of chamber identical, and the intermediate frequency third divides the height of chamber 10133 to be higher than institute
Stating intermediate frequency first divides chamber 10131 and intermediate frequency second to divide chamber 10132.
Further, second cavity body filter 1011 is located at the left side of second upper chamber 101, and described second
Intermediate frequency chamber 1013 is located at the right side of second cavity body filter 1011, and the second source chamber 1014 is located at second intermediate frequency
In the first of chamber 1013 in frequency division chamber 10131 and second frequency division chamber 10132 upside, and divide chamber 10132 with the intermediate frequency second
Connection, the top edge of the second source chamber 1014 divides the top edge of chamber 10133 contour concordant with the intermediate frequency third, and described the
Two cavity body filters 1011 (correspond to RF in fig. 8 to the second radiofrequency signal input port is offered on external second box portion outside
Port S121), second RF signal output 10111 is arranged in second cavity body filter 1011 on described second
On the right side of lower part in portion's cavity 101.
It is defeated that the intermediate frequency third divides the top of chamber 10133 that external second box portion outside is provided with the second intermediate-freuqncy signal
It exports (the IF port S122 in corresponding diagram 8), the top of the second source chamber is provided with to external second box portion outside
Second DC power supply the access port (+5V port S124 in corresponding diagram 8), the top of second lower cavity is to external described
Two box portion outsides are provided with the second reference signal input port (the REF port S123 in corresponding diagram 8) and second control signal input
Frequency can be arranged to the second local oscillation circuit in mouth (the CTRL port S125 in corresponding diagram 8), second control signal input port here
Rate control word, the second local oscillation circuit of control can produce different local oscillation signal frequencies.In addition, grounding ports are additionally provided with, it is right
Answer the port the GND S126 in Fig. 8.+ 5V the maximum current of the receiving channel module has 329mA, and the power consumption of entire module is
1.645W。
For the second radio circuit 1012 shown in Fig. 9, the refinement display of Figure 10 further progress.It can from Figure 10
Out, the first micro-strip WD1 which is electrically connected with second RF signal output 10111, described first is micro-
The other end with WD1 is electrically connected first order NC1001C-812S low noise amplification chip 213, and two NC1001C- in the circuit
The matched attenuator 215 of 3dB is also serially connected between 812S low noise amplification chip 213,214, and in the second level
It is also serially connected between the output end of NC1001C-812S low noise amplification chip 214 and the input port of image-reject filter
The matched attenuator 216 of 3dB.The power end of NC1001C-812S low noise amplification chip 213,214 connect respectively two it is independent
5V DC power supply terminal 217,218.It is supplied by providing independent 5V direct current to NC1001C-812S low noise amplification chip 213,214
Electricity can influence radio-frequency power amplification characteristic to avoid there is Interference from current therebetween.5V DC power supply terminal 217 connects
The capacitor 219 of 1000pF, 5V DC power supply terminal 218 also connect the capacitor 2110 of 1000pF, and capacitor 219 further with electricity
Hold 2110 connections, capacitor 2110 reconnects ground connection.Preferably, above-mentioned NC1001C-812S low noise amplification chip 213 and first
Between micro-strip WD1, between NC1001C-812S low noise amplification chip 213 and matched attenuator 215, matched attenuator 215 with
Between NC1001C-812S low noise amplification chip 214, NC1001C-812S low noise amplification chip 214 and matched attenuator
Between 216, between NC1001C-812S low noise amplification chip 213 and 5V DC power supply terminal 217, NC1001C-812S low noise
Between amplification chip 214 and 5V DC power supply terminal 218, between 5V DC power supply terminal 217 and capacitor 219,5V DC power supply terminal 218
It is to be carried out by least two spun golds between capacitor 2110, between capacitor 219 and capacitor 2110 and capacitor 2110 and ground
Electrical connection.Preferably, the diameter of spun gold here is 25um, is electrically connected in the second radio circuit by spun gold, energy
The conductibility for enough improving radiofrequency signal reduces transmission loss although will increase cost and advantageously ensures that the second radio circuit
Radiofrequency characteristics.
Further, as shown in figure 11, the second level NC1001C-812S low noise amplification chip 214 is electrically connected mirror backward
As rejects trap 10125.The image-reject filter is microstrip filter.As shown in figure 12, the image-reject filter
10125 output end is electrically connected third level NC1001C-812S low noise amplification chip by the second micro-strip 10126.Preferably, exist
3dB attenuator, and the second micro-strip 10126 are also serially connected between the image-reject filter 10125 and the second micro-strip 10126
Turning micro-strip, second radio circuit can be switched to by the lateral setting of prime by the turning micro-strip it is vertically arranged,
It is possible thereby to which entire second radio circuit can also be accommodated in a limited space.
As shown in figure 13, the third level NC1001C-812S low noise amplification chip is electrically connected by third micro-strip 10128
It is mixed the radio-frequency head of chip NC17111C-725M.The radio-frequency head of mixing chip (NC17111C-725M) 101210 is declined by 3dB
Subtract device and is electrically connected connection with third micro-strip 10128, the output end of the local oscillator end connection local oscillator filter of the mixing chip 101210,
And the second intermediate-freuqncy signal that the intermediate frequency end for being mixed chip 101210 is linked into the second intermediate frequency chamber by the 5th micro-strip 10134 is defeated
Enter end.
Further, as shown in figure 14, the local oscillator letter of second local oscillation circuit in second lower cavity
Number output end is linked into second upper chamber by the second insulator 10151, (is with holes by the 4th micro-strip 10152
Micro-strip) electrical connection amplification chip CHA3666, i.e. amplification chip 10153 shown in Figure 14.Preferably, it is also in series with therebetween
3dB attenuator.The output end of the amplification chip 10153 connects the second local oscillator filter 10155.The amplification chip
The output end of CHA3666 connects the second local oscillator filter, and second local oscillator filter connects the mixing chip NC17111C-
The intermediate frequency end at the local oscillator end of 725M, the mixing chip NC17111C-725M is linked into second intermediate frequency by the 5th micro-strip
Second signal input end of intermediate frequency of chamber.Preferably, which is microstrip filter.May be used also from Figure 14
To find out, two power ends D1, D2 of amplification chip CHA3666 connect 5V voltage terminal 10150 in succession respectively, and the two connect
One 1000pF capacitor of connection, the capacitor are grounded line end after connecting micro-strip 10154 again jointly again.
Here the second insulator connection is microstrip line with holes.By insulator connection can to avoid in conventional method
Box portion outside is attached by feeder line, is conducive to the volume for reducing integral module.This is identical as the first insulator, no longer superfluous
It states.
In addition, first local oscillator filter in the present invention is microstrip filter, the first order radio-frequency filter and
Second level radio-frequency filter is the identical radio frequency microstrip filter of structure, the image-reject filter and second vibration filter
Wave device is microstrip filter.Volume can reduce using microstrip filter, insertion loss is small, and filtering characteristic is good.These micro-strips
Filter has similar structures, is only illustrated here to microstrip filter used by image-reject filter.
As shown in figure 15, which includes 7 U-shaped microwave metal tapes being arranged on ceramic substrate, described
Microwave metal tape is sequentially arranged at intervals and the distribution that is centrosymmetric, wherein the first microwave metal tape 231 Open Side Down and be located at pair
Title center, the second microwave metal tape 232 and the equal opening upwards of third microwave metal tape 233, it is micro- to be located at described first
The left and right side of wave metal tape 231, Open Side Down and is located at the second microwave metal tape 232 for the 4th microwave metal tape 234
Left side, the 5th microwave metal tape 235 Open Side Down and be located at the third microwave metal tape 233 right side, the 6th microwave gold
Belong to 236 opening upwards of band and is located at the left side of the 4th microwave metal tape 234, a left side point for the 6th microwave metal tape 236
It is laterally extended in branch for first port 238,237 opening upwards of the 7th microwave metal tape and positioned at the 5th microwave metal tape
235 right side is laterally extended as second port 239 on the right branch of the 7th microwave metal tape 237.
Preferably, the width of the first microwave metal tape 231 is 0.1mm, the length of left-hand branch and right-hand branch and
It is identical, it is 2.1mm, it is 1.13mm that top, which connects branch length, and the top connects two of the left and right end portions of branch
Turning is cut off by isosceles, obtained left cut while and length when right cut be 0.14mm, the first microwave metal tape 231 respectively with
The second microwave metal tape 232, third microwave metal tape 233 interval be 0.16mm.
It is further preferred that the second microwave metal tape 232 and the structure having the same of third microwave metal tape 233,
Wherein the left-hand branch of the second microwave metal tape 232 is identical with the left-hand branch length of the third microwave metal tape 233,
It is 2.1mm, the right-hand branch of the right-hand branch of the second microwave metal tape 232 and the third microwave metal tape 233 is long
It spends identical, is 2.1mm, 232 lower part of the second microwave metal tape connection branch connect with 233 lower part of third microwave metal tape
33 length of branch is identical, is 1.13mm, and lower part connection branch 23 connect the left and right end portions of branch 33 with lower part
Two turnings are cut off by isosceles, and the length of obtained trimming is identical, are 0.14mm.
The right-hand branch of the second microwave metal tape 232 and the left-hand branch of the first microwave metal tape 231 are contour
Concordantly, i.e., in the left-hand branch of the top edge of the right-hand branch of the second microwave metal tape 232 and the first microwave metal tape 231
The lower edge of the corresponding connection branch in end is concordant, at the same the lower edge of the left-hand branch of the first microwave metal tape 231 with
The top edge that branch is connected corresponding to the right-hand branch lower end of the second microwave metal tape 232 is concordant.Equally, the third
The left-hand branch of microwave metal tape 233 and the right-hand branch of the first microwave metal tape 231 are contour concordant.
In addition, being divided into 0.14mm, the third between the second microwave metal tape 232 and the 4th microwave metal tape 234
0.14mm is divided between microwave metal tape 233 and the 5th microwave metal tape 235.
It is further preferred that the 4th microwave metal tape 234 and the structure having the same of the 5th microwave metal tape 235,
And it is identical as the structure of the first microwave metal tape 231.Wherein, 234 left-hand branch of the 4th microwave metal tape and the 5th micro-
The length of 235 left-hand branch of wave metal tape is identical, is 2.1mm, 234 right-hand branch of the 4th microwave metal tape and the 5th micro-
The length of 235 right-hand branch of wave metal tape is identical, is 2.1mm, 234 top of the 4th microwave metal tape connection branch and the
Five microwave metal tapes, 235 top connection branch length is identical, is 1.13mm, and the left and right end of the two tops connection branch
Two turnings in portion are cut off by isosceles, and it is 0.14mm that the length of two obtained trimming is identical.The 4th microwave metal tape
234 right-hand branch and the left-hand branch of the second microwave metal tape 232 are contour concordant, the 5th microwave metal tape 235
Left-hand branch and the right-hand branch of the third microwave metal tape 233 it is contour concordant.
0.1mm is divided between the 4th microwave metal tape 234 and the 6th microwave metal tape 236, the described 5th is micro-
0.1mm is divided between wave metal tape 235 and the 7th microwave metal tape 237.
It is further preferred that the length of the right-hand branch of the 6th microwave metal tape 236 is 2.1mm, width is
0.1mm, the length of left-hand branch are 1.3mm, and width is 0.24mm, and bottom connection branch is divided into two sections, wherein positioned at left side
The length of first linkage section is 0.94mm, and width is 0.24mm, and the left hand corner of first linkage section is cut off by isosceles,
The length of obtained trimming is 0.34mm, and the length positioned at second linkage section on right side is 0.53mm, and width is 0.1mm, and
The right hand corner of second linkage section is cut off by isosceles, and the length of obtained trimming 6321 is 0.14mm.The first port
238 length is 1.55mm, and width is 0.25mm, and the first port 238 arrives the described of bottom connection branch below
The distance of the top of first linkage section is 0.1mm.
7th microwave metal tape 237 and the 6th microwave metal tape 236 above-mentioned structure having the same, in the microstrip antenna
In symmetrical distribution.Wherein, the length of the left-hand branch of the 7th microwave metal tape 237 is 2.1mm, and width is
0.1mm, the length of right-hand branch are 1.3mm, and width is 0.24mm, and bottom connection branch is divided into two sections, wherein positioned at right side
The length of first linkage section is 0.94mm, and width is 0.24mm, and the right hand corner of first linkage section is cut off by isosceles,
The length of obtained trimming is 0.34mm, and the length positioned at second linkage section in left side is 0.53mm, and width is 0.1mm, and
The left hand corner of second linkage section is cut off by isosceles, and the length of obtained trimming is 0.14mm.The second port 239
Length is 1.55mm, and width is 0.25mm, the following bottom to the 7th microwave metal tape 237 of the second port 239
The distance for connecting the top of first linkage section of branch is 0.1mm.Between first port 238 and second port 239 away from
From for 12.49mm, i.e., the length of the filter is 12.49mm.
It is further preferred that the frequency range of the image-reject filter is 10.7GHz-12.95GHz, passband insertion damage
Consumption≤3dB, Out-of-band rejection: in 7.25GHz-9.8GHz, inhibiting ratio >=60dB, in 10GHz, inhibits ratio >=40dB,
13.75GHz-14.5GHz inhibiting ratio >=40dB, VSWR≤1.3.
Based on above embodiments, the invention discloses a kind of miniaturization ku frequency range ODU module, including transmission channel module and
Receiving channel module, transmission channel module include the first box body, are divided into the first upper chamber and the first lower chamber being isolated from each other
Body, is provided with the first intermediate frequency chamber, the first radio-frequency cavity, the first power source cavity and the first cavity body filter in the first upper chamber, and first
It is provided with the first local oscillation circuit in lower cavity, the first radio-frequency cavity is connected to by the first insulator and the first microstrip line with holes；
Receiving channel module includes the second box body, is divided into the second upper chamber and the second lower cavity being isolated from each other, the second upper chambers
Second cavity body filter, the second radio-frequency cavity, the second intermediate frequency chamber and second source chamber are set in body, are provided in the second lower cavity
Second local oscillation circuit is connected to the second radio-frequency cavity by the second insulator and the second microstrip line with holes.The ODU module has volume
Advantage small, low in energy consumption, reliable and stable and that applicable band range is wide.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure transformation made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant technical fields,
It is included within the scope of the present invention.
Claims (10)
1. a kind of miniaturization Ku frequency range ODU module, including transmission channel module and receiving channel module, which is characterized in that
The transmission channel module includes the first box body, first tray interior include the first upper chamber for being isolated from each other and
First lower cavity；
It is provided with the first intermediate frequency chamber for accommodating the first intermediate-frequency circuit in first upper chamber, accommodates the first radio circuit
First radio-frequency cavity, and the first power source cavity of the first power circuit is accommodated, first is provided in first lower cavity
Shake circuit, and first local oscillation circuit is connected in first radio-frequency cavity by the first insulator and the first microstrip line with holes,
First local oscillation signal of output is mixed with the first intermediate-freuqncy signal that first intermediate-frequency circuit exports obtains the first radiofrequency signal,
After first radiofrequency signal passes through the amplification and filtering of the first radio circuit again, it is input to and is arranged in first upper chamber
In the first cavity body filter；
The receiving channel module includes the second box body, second tray interior include the second upper chamber for being isolated from each other and
Second lower cavity；
The second cavity body filter being filtered to the second radiofrequency signal of input, institute are provided in second upper chamber
The second RF signal output for stating the second cavity body filter connects the second radio circuit, in accommodate the second intermediate-frequency circuit second
Frequency chamber, and the second source chamber of second source circuit is accommodated, the second local oscillation circuit is provided in second lower cavity；
The second local oscillation signal that second radiofrequency signal of the second radio circuit output and second local oscillation circuit generate is mixed
The second intermediate-freuqncy signal generated after frequency is linked into second intermediate-frequency circuit.
2. minimizing Ku frequency range ODU module according to claim 1, which is characterized in that the first intermediate frequency chamber is set to institute
State the left part of the first upper chamber, first power source cavity is located at the right side of the first intermediate frequency chamber, and with first intermediate frequency
For chamber for electrical connection, first radio-frequency cavity is reverse L type structure, downside and first power source cavity positioned at the first intermediate frequency chamber
Right side, first cavity body filter is set to the top of first upper chamber, and in the first intermediate frequency chamber, first
The upside of power source cavity and the first radio-frequency cavity；In the outer wall setting of first box body in the left side adjacent with the first intermediate frequency chamber
There are the first power port, the first reference source input port, the first signal input end of intermediate frequency mouth, and is filtered with first cavity
The outer wall of first box body of the adjacent upside of wave device is provided with the first RF signal output mouth；First power port
First power circuit being electrically connected in first power source cavity, the first reference source input port are electrically connected to described
First local oscillation circuit, the first signal input end of intermediate frequency mouth are electrically connected to first medium frequency electric of the first intermediate frequency chamber
Road, the first RF signal output mouth are connected to first cavity body filter.
3. miniaturization Ku frequency range ODU module according to claim 2, which is characterized in that first radio circuit is divided into
First transverse legs and the first vertical branch, first transverse legs include that successively cascade first frequency mixer, the first order are penetrated
Frequency filter, first order rf gain amplifier, the first vertical branch include successively cascade second level radio-frequency filter,
Second level rf gain amplifier and radio-frequency power amplifier, the first order rf gain amplifier and second level rf filtering
Pass through the first turning microstrip line electrical connection between device.
4. miniaturization Ku frequency range ODU module according to claim 3, which is characterized in that first local oscillation circuit includes
First frequency synthesizer, the first frequency multiplier, first vibration magnifier and the first local oscillator filter being sequentially connected in series, first frequency
Rate synthesizer is electrically connected with the first reference source input port, external reference source by the first reference source input port to
The first frequency synthesizer inputs the first reference frequency signal, the corresponding electricity of the first numerical control interface of the first frequency synthesizer
First singlechip is connected, the first singlechip inputs frequency to the first frequency synthesizer by the first numerical control interface
Control parameter, first frequency multiplier carry out frequency needed for two frequencys multiplication generate to the signal that the first frequency synthesizer exports
Then first local oscillation signal carries out power amplification to the first local oscillation signal by first vibration magnifier, then by first local oscillator
Filter carries out inhibition filtering to first local oscillation signal；
It include the described first microstrip line with holes for connecting the output end of first frequency multiplier in first radio-frequency cavity, wherein band
Nose end is electrically connected via first insulator with the output end for first frequency multiplier for being located at first lower cavity, separately
One end is electrically connected the input terminal of the first vibration magnifier, the output end electrical connection described first of the first vibration magnifier
Local oscillator filter, the output end of first local oscillator filter are electrically connected with first frequency mixer.
5. miniaturization Ku frequency range ODU module according to claim 4, which is characterized in that first intermediate-frequency circuit includes
Successively cascade temperature compensation attenuator, first order intermediate-frequency filter, first order intermediate frequency amplifier, second level intermediate frequency amplifier and second
Grade intermediate-frequency filter, the second level intermediate-frequency filter are electrically connected with first frequency mixer.
6. miniaturization Ku frequency range ODU module according to claim 5, which is characterized in that first local oscillator filter is
Microstrip filter, the first order radio-frequency filter and second level radio-frequency filter are the identical radio frequency microstrip filter of structure.
7. minimizing Ku frequency range ODU module according to claim 1, which is characterized in that the second intermediate frequency chamber includes vertical
And three points of chambers of connection, wherein right side is that intermediate frequency first divides chamber, centre is that intermediate frequency second divides chamber, and left side is intermediate frequency third point
Chamber, the intermediate frequency first divide chamber and intermediate frequency second to divide chamber height identical, and the intermediate frequency third divides the height of chamber to be higher than the intermediate frequency
First point of chamber and intermediate frequency second divide chamber；Second cavity body filter is located at the left side of second upper chamber, and described second
Intermediate frequency chamber is located at the right side of second cavity body filter, and the second source chamber is located at the first intermediate frequency of the second intermediate frequency chamber
Divide the upside of frequency division chamber in chamber and second, and divides chamber to be connected to the intermediate frequency second, the top edge of the second source chamber and institute
Stating intermediate frequency first divides the top edge of chamber contour concordant, and second cavity body filter is to offering the on external second box portion outside
Two radiofrequency signal input ports, second RF signal output are arranged in second cavity body filter on second top
On the right side of the intracorporal lower part of chamber.
8. according to claim 7 minimize Ku frequency range ODU module, which is characterized in that second radio circuit include with
First micro-strip of second RF signal output electrical connection, the of the other end electrical connection two-stage series connection of first micro-strip
Level-one NC1001C-812S low noise amplification chip and second level NC1001C-812S low noise amplification chip, the second level
NC1001C-812S low noise amplification chip is electrically connected image-reject filter backward, and the output end of the image-reject filter is logical
Cross the second micro-strip electrical connection third level NC1001C-812S low noise amplification chip, the third level NC1001C-812S low noise amplification
Chip goes backward through the radio-frequency head of third micro-strip electrical connection mixing chip NC17111C-725M；Second micro-strip is curved arc shape
Micro-strip is switched to by the lateral setting of prime second radio circuit vertically arranged.
9. minimizing Ku frequency range ODU module according to claim 8, which is characterized in that be located in second lower cavity
The second local oscillation signal output end of second local oscillation circuit be linked into second upper chamber by the second insulator,
It is electrically connected amplification chip CHA3666 by the 4th micro-strip with holes, the output end of the amplification chip CHA3666 connects second
Polarization filter, second local oscillator filter connect the local oscillator end of the mixing chip NC17111C-725M, the mixing chip
The intermediate frequency end of NC17111C-725M is linked into the second signal input end of intermediate frequency of the second intermediate frequency chamber by the 5th micro-strip.
10. minimizing Ku frequency range ODU module according to claim 9, which is characterized in that the image-reject filter and institute
Stating the second local oscillator filter is microstrip filter.
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| CN111010224A (en) * | 2019-12-26 | 2020-04-14 | 中国科学院国家空间科学中心 | S-band satellite communication terminal for offshore mobile platform |
| CN113285748A (en) * | 2021-04-07 | 2021-08-20 | 上海利正卫星应用技术有限公司 | Miniaturized radio frequency front-end device of satellite-borne communication system |
| CN114204956A (en) * | 2021-12-08 | 2022-03-18 | 江苏屹信航天科技有限公司 | Miniaturized multifrequency section communication all-in-one |
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