CN109150214B - Miniaturized ODU emission channel circuit - Google Patents
Miniaturized ODU emission channel circuit Download PDFInfo
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- CN109150214B CN109150214B CN201811189728.8A CN201811189728A CN109150214B CN 109150214 B CN109150214 B CN 109150214B CN 201811189728 A CN201811189728 A CN 201811189728A CN 109150214 B CN109150214 B CN 109150214B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
- H04B2001/0416—Circuits with power amplifiers having gain or transmission power control
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
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Abstract
The invention discloses a miniaturized ODU transmitting channel circuit, which comprises a power supply circuit, a local oscillation circuit, an intermediate frequency circuit and a radio frequency circuit, wherein the local oscillation circuit performs frequency synthesis on an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit filters and amplifies the input intermediate frequency signal and outputs the local oscillation signal, then mixes the intermediate frequency signal with the local oscillation signal in the radio frequency circuit to obtain a radio frequency signal for output, the radio frequency signal also performs gain amplification and power amplification in the radio frequency circuit and outputs the radio frequency signal after radio frequency filtering, and the power supply circuit performs voltage stabilization and voltage transformation on an input external power supply and then provides direct current voltage stabilization power for the local oscillation circuit, the intermediate frequency circuit and the radio frequency circuit respectively. The emission channel circuit works stably and reliably, and has the advantages of saving power consumption, reducing volume and reducing cost.
Description
Technical Field
The invention belongs to the technical field of communication, and particularly relates to a miniaturized ODU transmitting channel circuit suitable for satellite communication.
Background
In satellite communication devices, ODU (Out-door Unit) refers to an outdoor Unit, mainly comprising frequency conversion and power amplification, and may be specifically divided into a transmitting channel and a receiving channel, where the transmitting channel is usually referred to as BUC (Block Up-Converter), i.e. an Up-conversion power amplifier, and the receiving channel is mainly referred to as LNB (Low Noise Block down-Converter), i.e. a low noise amplification, frequency Converter.
In miniaturized applications of the transmission channel, the volume occupied by the transmission channel is reduced as much as possible, and the radio frequency characteristics of the transmission channel, such as gain, phase noise, spurious emission, frequency resolution, power consumption, and the like, are required to meet the design requirements, and the operation is stable and reliable.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a miniaturized ODU transmitting channel circuit, which solves the problems of limited volume, excessive power consumption, reduced radio frequency characteristics and insufficient stability of the transmitting channel circuit in the prior art in miniaturized application.
In order to solve the technical problems, the technical scheme adopted by the invention is to provide the ODU transmitting channel circuit for miniaturization, which comprises a power supply circuit, a local oscillation circuit, an intermediate frequency circuit and a radio frequency circuit, wherein the local oscillation circuit synthesizes the frequency of an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit filters and amplifies the input intermediate frequency signal and outputs the local oscillation signal, then mixes the intermediate frequency signal with the local oscillation signal in the radio frequency circuit to obtain a radio frequency signal output, the radio frequency signal is further amplified in gain and amplified in the radio frequency circuit and output after radio frequency filtering, and the power supply circuit stabilizes and transforms the input external power supply and then respectively provides direct current stabilized power for the local oscillation circuit, the intermediate frequency circuit and the radio frequency circuit.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the local oscillation circuit includes a local oscillation signal source formed by cascade connection of a frequency synthesizer and a frequency multiplier, and the local oscillation signal output by the frequency multiplier is subjected to gain amplification by a local oscillation gain amplifier, and then is filtered by a local oscillation microstrip filter and output to a mixer in the radio frequency circuit.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the numerical control interface of the frequency synthesizer is correspondingly and electrically connected to a single chip microcomputer, and the single chip microcomputer inputs frequency control parameters to the frequency synthesizer through the numerical control interface, thereby setting the frequency of the output signal of the frequency synthesizer.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the intermediate frequency circuit includes an intermediate frequency signal input end, and the intermediate frequency signal input end is electrically connected to an intermediate frequency filter for filtering clutter outside the intermediate frequency signal first, and then an output end of the intermediate frequency filter is electrically connected to an intermediate frequency amplifier, and the intermediate frequency amplifier performs power amplification on the intermediate frequency signal and outputs the intermediate frequency signal.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, a temperature compensation attenuator is further connected in series between the intermediate frequency signal input terminal and the intermediate frequency filter.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the radio frequency circuit includes the mixer, and a radio frequency filter electrically connected to the mixer for suppressing intermodulation spurs in the radio frequency signal, a radio frequency amplifier electrically connected to a subsequent stage of the radio frequency filter for amplifying the radio frequency signal, and a cavity filter electrically connected to a subsequent stage of the radio frequency amplifier for out-of-band suppression of the radio frequency signal.
In another embodiment of the miniaturized ODU transmit channel circuit of the present invention, the radio frequency filter comprises a first stage radio frequency filter and a second stage radio frequency filter.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the radio frequency amplifier includes a first stage radio frequency gain amplifier, a second stage radio frequency gain amplifier, and a radio frequency power amplifier, and after the output end of the mixer is electrically connected to the first stage radio frequency filter, the first stage radio frequency gain amplifier, the second stage radio frequency filter, the second stage radio frequency gain amplifier, and the radio frequency power amplifier are sequentially connected.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the power supply circuit includes a 5V voltage input end and a 6V voltage input end, where the 5V voltage input end obtains a voltage stabilizing 5V after passing through a first power supply filtering network, and is divided into a plurality of independent power supply branches to supply power to a plurality of chips of the transmission channel circuit, and the 6V voltage input end obtains a voltage stabilizing 6V after passing through a second power supply filtering network, and supplies power to the radio frequency power amplifier in the transmission channel circuit.
In another embodiment of the miniaturized ODU transmission channel circuit of the present invention, the voltage stabilizing 5V supplies negative voltage power to the radio frequency power amplifier via a voltage stabilizing circuit generating-0.55V voltage, and the voltage stabilizing 6V supplies positive voltage power to the radio frequency power amplifier via a protection circuit supplying 6V voltage.
The beneficial effects of the invention are as follows: the invention discloses a miniaturized ODU transmitting channel circuit, which comprises a power supply circuit, a local oscillation circuit, an intermediate frequency circuit and a radio frequency circuit, wherein the local oscillation circuit performs frequency synthesis on an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit filters and amplifies the input intermediate frequency signal and outputs the local oscillation signal, then mixes the intermediate frequency signal with the local oscillation signal in the radio frequency circuit to obtain a radio frequency signal for output, the radio frequency signal also performs gain amplification and power amplification in the radio frequency circuit and outputs the radio frequency signal after radio frequency filtering, and the power supply circuit performs voltage stabilization and voltage transformation on an input external power supply and then provides direct current voltage stabilization power for the local oscillation circuit, the intermediate frequency circuit and the radio frequency circuit respectively. The emission channel circuit works stably and reliably, and has the advantages of saving power consumption, reducing volume and reducing cost.
Drawings
FIG. 1 is a block diagram of one embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 2 is a diagram illustrating a local oscillator circuit in another embodiment of a miniaturized ODU transmission channel circuit according to the invention;
FIG. 3 is a schematic diagram of a local oscillator circuit in another embodiment of a miniaturized ODU transmission channel circuit according to the invention;
FIG. 4 is a diagram of a local oscillator microstrip filter according to another embodiment of the miniaturized ODU transmission channel circuit of the present invention;
FIG. 5 is a block diagram of an intermediate frequency circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 6 is a diagram of an intermediate frequency circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 7 is a schematic diagram of an intermediate frequency circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 8 is a block diagram of an RF circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 9 is a schematic diagram of RF circuitry in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 10 is a diagram of RF microstrip filter components in another embodiment of a miniaturized ODU transmission channel circuit according to the present invention;
FIG. 11 is a diagram of RF circuitry in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 12 is a block diagram of a power supply circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
FIG. 13 is a schematic diagram of a transformer circuit in another embodiment of a miniaturized ODU transmit channel circuit according to the invention;
fig. 14 is a schematic diagram of a protection circuit in another embodiment of a miniaturized ODU transmit channel circuit of the present invention.
Detailed Description
In order that the invention may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Fig. 1 is a schematic diagram illustrating the components of a miniaturized ODU transmit channel circuit according to an embodiment of the present invention. As shown in fig. 1, the embodiment of the miniaturized ODU transmission channel circuit includes a power circuit 1, a local oscillation circuit 2, an intermediate frequency circuit 3 and a radio frequency circuit 4, where the local oscillation circuit 2 performs frequency synthesis on an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit 3 performs filtering and amplifying on the input external intermediate frequency signal and outputs the filtered and amplified local oscillation signal, then mixes the filtered and amplified local oscillation signal with the radio frequency circuit 4 to obtain a radio frequency signal output, and the radio frequency signal further performs gain amplification and power amplification in the radio frequency circuit 4 and outputs the amplified and amplified radio frequency signal after radio frequency filtering, and the power circuit 1 performs voltage stabilization and voltage transformation on the input external power supply and then provides direct current voltage stabilization power for the local oscillation circuit 2, the intermediate frequency circuit 3 and the radio frequency circuit 4 respectively.
Preferably, the transmitting channel circuit shown in fig. 1 mainly adopts integrated circuit chips to realize functions of filtering, amplifying and the like in each circuit, and the adopted chips are mainly radio frequency chips, peripheral circuits of the chips are as few as possible, and the volume of the chips is small, so that less space can be occupied, and the purpose of miniaturization is achieved.
Preferably, the power supply circuit is configured to supply power to the chips in the other circuits by using separate power supply branches, so that the power supply to each chip is not affected by the current of the other chips. For example, for a power amplifying chip in a radio frequency circuit, the current fluctuation consumed is large, and particularly, the current is obviously different when power amplification is generated and when power amplification is not generated, if the power supply of the power amplifying chip is shared with the power supplies of other chips, the fluctuation of the current can influence the stability of power supply of other chips, and in order to avoid the situation, each chip is powered by adopting an independent power supply branch.
Further preferably, as shown in fig. 2, the local oscillation circuit includes a local oscillation signal source formed by cascading a frequency synthesizer 21 and a frequency multiplier 22, and the local oscillation signal output by the frequency multiplier 22 is amplified by a local oscillation gain amplifier 24, filtered by a local oscillation microstrip filter, and output to a mixer in the radio frequency circuit.
A matching attenuator 23 is preferably also connected in series here between the frequency multiplier chip 22 and the local oscillator gain amplifier chip 24. The main purpose of the matching attenuator 23 is to enable the output impedance of the frequency multiplier chip 22 to be matched to the input impedance of the matching attenuator 23, while the output impedance of the matching attenuator 23 is also matched to the input impedance of the local oscillator gain amplifier chip 24. The matching attenuator 23 is formed by passive electronic components, which inevitably brings about insertion loss to attenuate signals, so that the matching attenuator has an attenuation effect on local oscillation signals output by the frequency multiplier chip 22. Preferably, the matching attenuator 23 is formed by combining three matching resistors, wherein two ends of the first matching resistor are respectively and electrically connected with the output end of the frequency multiplier chip 22 and the input end of the local oscillator gain amplifier chip 24, one end of the second matching resistor is electrically connected with the output end of the frequency multiplier chip 22, the other end of the second matching resistor is grounded, one end of the third matching resistor is electrically connected with the input end of the local oscillator gain amplifier chip 24, and the other end of the third matching resistor is grounded. The resistance values of the three resistors can be set according to the impedance characteristics to be matched before and after.
Preferably, the frequency synthesizer chip 21 output generates a frequency of 6.4GHz, while the frequency generated by the frequency multiplier chip 22 corresponds to 12.8GHz. Here, a signal of 6.4GHz generated by a frequency synthesizer, which is already of a comparatively high frequency for a single chip capable of generating such a high frequency, has a higher radio frequency characteristic requirement for the frequency synthesizer chip 21 if the higher frequency higher than 6.4GHz is directly synthesized, and power consumption increases. For this purpose, the desired local oscillation signal of higher frequency is realized by means of frequency multiplication in the subsequent stage.
Preferably, the numerical control interface of the frequency synthesizer is correspondingly and electrically connected with a singlechip, and the singlechip inputs frequency control parameters to the frequency synthesizer through the numerical control interface, so that the frequency of an output signal of the frequency synthesizer is set, and the multivalue of the frequency generated by the frequency synthesizer chip is enhanced.
It is further preferred that the frequency synthesizer chip selects ADF4355 and is further connected to monolithic chip attin 9 via an SPI interface comprising a clock CLK terminal, a DATA terminal and an enable LE terminal, through which a frequency control word can be written to the chip ADF4355, so that the frequency value outputted by the ADF4355 can be changed, for example, not only fixedly limited to 6.4GHz, but also other required frequency values, thereby increasing the diversity of the output frequency of the local oscillation circuit, but also limited to one fixed frequency. Chip attin 9 is a small-sized and small-pin single-chip microcomputer, wherein three I/O pins are applied to the electrical connection with the enable, data and clock terminals of chip ADF 4106. The chip ATTINY9 also has the advantage of low power consumption.
Further preferably, as shown in fig. 4, for the local oscillation microstrip filter 25 in fig. 2, the microwave strips include 7U-shaped microwave strips disposed on a ceramic substrate, the microwave strips are sequentially arranged at intervals and are distributed in a central symmetry, wherein the first microwave strip 251 is open upward and is located in the center of symmetry, the second microwave strip 252 and the third microwave strip 253 are open downward and are respectively located at the left side and the right side of the first microwave strip 251, the fourth microwave strip 254 is open upward and is located at the left side of the second microwave strip 252, the fifth microwave strip 255 is open upward and is located at the right side of the third microwave strip 253, the sixth microwave strip 256 is open downward and is located at the left side of the fourth microwave strip 254, the left branch of the sixth microwave strip 256 is laterally extended to form a first port, the seventh microwave strip 257 is open downward and is located at the right side of the fifth microwave strip 255, and the right branch of the seventh microwave strip 257 is laterally extended to form a second port.
It is further preferable that the width of the first microwave metal strip 251 is 0.19mm, the lengths of the left and right branches are the same, 1.99mm, the length of the lower connecting branch is 0.82mm, and the intervals between the first microwave metal strip 251 and the second and third microwave metal strips 252 and 253 are 0.17mm. The distance between the second microwave metal strip 252 and the fourth microwave metal strip 254 is 0.14mm, the distance between the third microwave metal strip 253 and the fifth microwave metal strip 255 is 0.14mm, the distance between the fourth microwave metal strip 254 and the sixth microwave metal strip 256 is 0.07mm, and the distance between the fifth microwave metal strip 255 and the seventh microwave metal strip 257 is 0.07mm.
Preferably, the sixth and seventh microwave metal strips 256 and 257 are further optimized in structure in order to achieve the filtering characteristics of the filter. The length of the right branch of the sixth microwave metal belt is 1.95mm, the width is 0.19mm, the length of the left branch is 1.75mm, the width is 0.24mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned at the left side is 0.5mm, the width is 0.24mm, the length of the second connecting section positioned at the right side is 0.3mm, and the width is 0.19mm; the length of the first port is 0.97mm, the width is 0.24mm, and the distance from the upper edge of the first port to the upper edge of the first connecting section of the upper end connecting branch is 0.91mm. The length of the left branch of the seventh microwave metal belt is 1.95mm, the width is 0.19mm, the length of the right branch is 1.75mm, the width is 0.24mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned on the right side is 0.5mm, the width is 0.24mm, the length of the second connecting section positioned on the left side is 0.3mm, and the width is 0.19mm; the length of the second port is 0.97mm, the width is 0.24mm, and the distance from the upper edge of the second port to the upper edge of the first connecting section of the upper end connecting branch is 0.91mm.
The above structural design is designed based on the technical index to be achieved by the microstrip filter under the small-size condition, the band-pass filtering range of the local oscillator filter is 12.5GHz-14.2GHz, the insertion loss of the passband is less than or equal to 3dB, the VSWR is less than or equal to 1.3, and the out-of-band rejection condition is: the out-of-band inhibition rate is more than or equal to 55dBc in the range of 6.4GHz-6.5GHz, and is more than or equal to 55dBc in the range of 19.2GHz-19.575 GHz.
In addition, the length of the whole local oscillation microstrip filter is only 8.36mm, the height is less than 2mm, the thickness of the microwave metal bands is 0.19mm, and the thickness of the microwave metal bands arranged on the ceramic substrate is 0.254mm. The local oscillator microstrip filter has a small volume structure, and is suitable for miniaturized ODU emission channels.
As shown in fig. 5, the intermediate frequency circuit includes an intermediate frequency signal input terminal 311, the intermediate frequency signal input terminal 311 is electrically connected to an intermediate frequency filter 32 for filtering noise outside the intermediate frequency signal, and then an output terminal of the intermediate frequency filter 32 is electrically connected to an intermediate frequency amplifier 33, and the intermediate frequency amplifier 33 performs power amplification on the intermediate frequency signal and outputs the amplified intermediate frequency signal. Preferably, a temperature compensation attenuator 31 is further connected in series between the intermediate frequency signal input terminal 311 and the intermediate frequency filter 32. The temperature compensating attenuator chip 31 can compensate for a gain drop caused by the first and second intermediate frequency amplifier chips 33 and 34 in the intermediate frequency circuit in a high temperature environment. The gain reduction value caused by the intermediate frequency circuit can be determined by high-low temperature experiments, and an appropriate temperature compensation attenuator chip 31 can be selected by calculation.
Further preferably, as shown in fig. 6, the intermediate frequency filter includes a first intermediate frequency filter 321, and the intermediate frequency amplifier includes a first intermediate frequency amplifier 331. Further, the intermediate frequency filter further includes a second intermediate frequency filter 322, and the intermediate frequency amplifier further includes a second intermediate frequency amplifier 332. Thereby enabling the input intermediate frequency signal to be amplified and filtered by gain and then output to a mixer in the radio frequency circuit. Preferably, a matching attenuator 301 is also provided between the first intermediate frequency amplifier 331 and the second intermediate frequency amplifier 332.
Preferably, the first stage intermediate frequency filter 321 is a chip HFCN-740, the temperature compensation attenuator 31 is a chip STCA0609N9, and the output end of the chip STCA0609N9 is directly and electrically connected with the input end of the chip HFCN-740. The input frequency range of the chip STCA0609N9 is 0-6GHz, the maximum attenuation is 9dB, the attenuation precision is +/-0.5 dB, the attenuation temperature coefficient is-0.003 to-0.010 dB/dB/DEGC, and the volume is as follows: 3.78X3.10X0.58 mm 3, the chip only needs 3 connecting terminals, and no peripheral circuit is needed. Chips HFCN-740 are high pass filters, which only need 4 connection terminals, no peripheral circuits are needed, and typical data are: the insertion loss corresponding to 575MHz is 19.61dB, the insertion loss corresponding to 780MHz is 1.77dB, the insertion loss corresponding to 780MHz is 0.94dB, the insertion loss corresponding to 3000MHz is 2.57dB, the insertion loss corresponding to 4000MHz is 5.72dB, and the volume is: 3.20X1.60deg.X0.94 mm 3. It can be seen that the space occupied by the two chips is very small, within 7 cubic millimeters.
Further, the first intermediate frequency amplifier 331 includes a chip UPC3226, where the working frequency band of the chip is 0-3GHz, the gain is 25dB, the noise factor is 5.3dB, the output 1dB compression point power is +7.5dbm, the current is 15mA, and the power consumption is 75mW. The chip has a volume of 2.1×2.0×0.9mm 3, is packaged by 6 pins super minimold, and has small appearance and simple circuit.
Preferably, the second stage intermediate frequency amplifier 332 comprises a die ECG001F-G and is electrically connected at an input of the die ECG001F-G to an output of the die UPC 3226. Preferably, a matching attenuator 301 is connected in series between the input of the chip ECG001F-G and the output of the chip UPC 3226. Further, the second stage intermediate frequency filter 322 includes a chip LFCN, and is electrically connected to the output of the chip ECG001F-G at the input of the chip LFCN 1800.
Further, as shown in fig. 7, a capacitor C2 is connected between the input end of the chip ECG001F-G and the output end of the chip UPC3226, and the matching attenuator is composed of a resistor matching network composed of resistors R1, R2, and R3, and then is connected to the RFin pin of the chip ECG001F-G through a capacitor C50. The working frequency band of the chip ECG001F-G is 0-6GHz, the gain is 20dB, the noise coefficient is 3.4dB, the output 1dB compression point power is 12.5dBm, the current is 30mA, and the power consumption is 150mW. The volume of the chip was 2.1X12.0X1.10 mm 3. In addition, the output end of the chip is also used as a power supply end of direct current 5V voltage, power is supplied to the chip through a power supply network consisting of R29, C52, C53 and L11, and the output end is connected with a chip LFCN1800 of a subsequent stage through a capacitor C51. The chip belongs to a low-pass filter, and typical data are as follows: the insertion loss corresponding to 100MHz is 0.07dB, the insertion loss corresponding to 500MHz is 0.21dB, the insertion loss corresponding to 1875MHz is 0.90dB, the insertion loss corresponding to 2125MHz is 2.29dB, the insertion loss corresponding to 2450MHz is 32.51dB, and the insertion loss corresponding to 4000MHz is 38.61dB, and the volume is: 3.20X1.60deg.X0.94 mm 3. Thus, the high pass filtering is performed by chips HFCN-740 as previously described, while the low pass filtering is performed by chip LFCN, thereby limiting the frequency range of the intermediate frequency signal to a desired frequency range.
Preferably, the frequency range of the intermediate frequency signal input by the intermediate frequency circuit is 950MHz-1700MHz, the input power is-25 dBm, the output power is 6dBm after twice filtering and twice amplifying, and the twice filtering is low-pass filtering and high-pass filtering respectively, so that clutter is filtered in the frequency range of the intermediate frequency signal. The mode of arranging two amplifiers between the two filters is beneficial to filtering clutter components in a low frequency band, and then the amplification gain is determined by design indexes, for example, a gain value is selected according to the input power of an input intermediate frequency signal, if the gain of the first-stage amplification is insufficient, two-stage gain amplification is needed, impedance matching is needed before and after the two-stage amplifiers are cascaded, so that a better transmission effect is obtained, and the high-frequency clutter is filtered out by arranging a high-pass filter in the later stage. The chip components selected in the intermediate frequency circuit have a single chip, can realize the filtering or amplifying function, are small in size, few in pins, simple in peripheral circuit, low in power consumption and capable of supplying power to direct current 5V, and can provide good filtering characteristics and amplifying characteristics for input intermediate frequency signals, and the noise coefficient of the channel circuit is low, so that the chip components are suitable for the requirement of miniaturized ODU.
As shown in fig. 8, the radio frequency circuit includes a mixer 41, where the mixer 41 includes an intermediate frequency input 411 for inputting an intermediate frequency signal, a local oscillation input 412 for inputting a local oscillation signal, and a radio frequency output 413 for outputting a radio frequency signal after mixing, the radio frequency output 413 is electrically connected to a radio frequency filter 42 for suppressing intermodulation clutter in the radio frequency signal, a subsequent stage of the radio frequency filter 42 is electrically connected to a radio frequency amplifier 43 for amplifying the radio frequency signal, and a subsequent stage of the radio frequency amplifier 43 is also electrically connected to a cavity filter 44 for out-of-band suppression of the radio frequency signal.
Further preferably, as shown in fig. 9, the rf filter 42 includes a first stage rf filter 421 and a second stage rf filter 422. Preferably, the rf amplifier 43 includes a first stage rf gain amplifier 431, a second stage rf gain amplifier 432, and an rf power amplifier 433.
The rf output end of the mixer 41 is electrically connected to the first stage rf filter 421, and then sequentially connected to the first stage rf gain amplifier 431, the second stage rf filter 422, the second stage rf gain amplifier 432, and the rf power amplifier 433.
Here, three stages of rf filtering are provided, where the first stage of rf filter 421 is disposed after the mixer 41, and functions to perform band-pass filtering on the rf signal obtained after mixing, to suppress intermodulation products after mixing, and the second stage of rf filter 422 is disposed after the first rf gain amplifier 431, to mainly perform suppression filtering on clutter components caused by nonlinear distortion possibly generated by gain amplification, to overcome the change of frequency components caused by gain amplification, and to suppress the power increase of out-of-band signals caused by gain amplification synchronization. The purpose of the cavity filter 44 after the rf power amplifier 423 is to reduce the insertion loss as much as possible, so as to obtain a larger out-of-band rejection. Preferably, the in-band insertion loss of the cavity filter is less than or equal to 0.5dB, and the first rf filter 421 and the second rf filter 422 are preferably microstrip filters, which each have an insertion loss of 6 dB.
Further, a matching attenuator 201 is connected in series between the rf output end of the mixer 41 and the first stage rf filter 421, a matching attenuator 202 is connected in series between the first stage rf filter 421 and the first stage rf gain amplifier 431, a matching attenuator 203 is connected in series between the first stage rf gain amplifier 431 and the second stage rf filter 422, and a matching attenuator 204 is connected in series between the second stage rf filter 422 and the second stage rf gain amplifier 432.
By arranging the matching attenuators, on one hand, the front and rear radio frequency devices can ensure mutual impedance matching in cascade connection, signal reverse backflow caused by impedance mismatch when radio frequency signals are transmitted in a channel is prevented, on the other hand, when the first-stage radio frequency gain amplifier and the second-stage radio frequency gain amplifier have limited requirements on the power of the input radio frequency signals, the power of the input radio frequency signals can be reduced through the attenuators, and because the gain amplifiers are saturated and generate nonlinear distortion when the power of the input signals is overlarge, the two-stage gain amplifiers are arranged, and the integrity of the signals can be ensured while the overall gain of the channel is met to meet design indexes. For example, if the overall gain of the two gain amplifiers is 40-50dB, if the gain of the first stage rf gain amplifier is too high to be 30dB, and the gain of the second stage rf gain amplifier is 20dB, the power of the rf signal output from the first stage rf gain amplifier may be relatively large, and when the rf signal is directly input to the second stage rf gain amplifier, the amplification saturation may be caused, so that the rf signal output from the second stage rf gain amplifier may be distorted. The power of the radio frequency signal input to the second-stage radio frequency gain amplifier can be reduced by adding the matched attenuator between the first-stage radio frequency gain amplifier and the second-stage radio frequency gain amplifier, so that the second-stage radio frequency gain amplifier can not work in a supersaturated state to distort the output radio frequency signal. Preferably, for saving space and achieving the purpose of miniaturization, the matching attenuators are all chips TGL4201.
In addition, the rf power amplifier 44 is disposed at a rear position, so that on one hand, because the power of the rf signal obtained by power amplification is larger, the current is increased, the power consumption is increased, and the power output is also large, and the placement of the rf power amplifier at the rear end can avoid the interference of the current power consumption on other circuits in the rf, thereby enhancing the electromagnetic compatibility of the rf channel. On the other hand, the method is also beneficial to directly outputting high-power radio frequency signals to the outside, avoiding the influence on a front-stage radio frequency circuit, and immediately generating mismatching of the external output, unreliable load connection and even no radio frequency load connection. Therefore, preferably, the radio frequency power amplifier further comprises a power supply protection circuit for protecting the power-on operation thereof.
The first-stage radio frequency filter and the second-stage radio frequency filter are radio frequency microstrip filters with the same structure.
Further preferably, as shown in fig. 10, the rf microstrip filter includes U-shaped microwave metal strips, i.e., first to seventh microwave metal strips 231 to 237, disposed on a ceramic substrate, wherein the microwave metal strips are arranged at intervals in a transverse direction with respect to the first microwave metal strip 231, and the opening directions of the microwave metal strips are staggered and are symmetrical in the center. Wherein the first microwave metal band 231 is opened upwards and is positioned at the symmetry center, the second microwave metal band 232 and the third microwave metal band 233 are opened downwards and are respectively positioned at the left side and the right side of the first microwave metal band 231, the fourth microwave metal band 234 is opened upwards and is positioned at the left side of the second microwave metal band 232, the fifth microwave metal band 235 is opened upwards and is positioned at the right side of the third microwave metal band 233, the sixth microwave metal band 236 is opened downwards and is positioned at the left side of the fourth microwave metal band 234, the left branch of the sixth microwave metal band 236 is transversely extended to form a first port 238, the seventh microwave metal band 237 is opened downwards and is positioned at the right side of the fifth microwave metal band 235, and the right branch of the seventh microwave metal band 237 is transversely extended to form a second port 239.
Preferably, for the first microwave metal band 231, the width of the metal band is 0.22mm, the lengths of the left side branch and the right side branch are the same, and are 1.6mm, the length of the lower connecting branch is 1.23mm, and the intervals between the first microwave metal band 231 and the second microwave metal band 232 and the third microwave metal band 233 are 0.25mm. The distance between the second microwave metal strip 232 and the fourth microwave metal strip 234 is 0.22mm, the distance between the third microwave metal strip 233 and the fifth microwave metal strip 235 is 0.22mm, the distance between the fourth microwave metal strip 234 and the sixth microwave metal strip 236 is 0.1mm, and the distance between the fifth microwave metal strip 235 and the seventh microwave metal strip 237 is 0.1mm.
It is further preferred that the sixth and seventh microwave metal strips 236, 237 are further optimized in structure in order to achieve the filter characteristics of the filter. The length of the right branch of the sixth microwave metal strip 236 is 1.6mm, the width is 0.22mm, the length of the left branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned at the left side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned at the right side is 0.62mm, and the width is 0.22mm; the length of the first port 238 is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the first port 238 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The length of the left branch of the seventh microwave metal belt is 1.6mm, the width is 0.22mm, the length of the right branch is 1.4mm, the width is 0.23mm, the upper connecting branch is divided into two sections, wherein the length of the first connecting section positioned on the right side is 0.63mm, the width is 0.23mm, the length of the second connecting section positioned on the left side is 0.62mm, and the width is 0.22mm; the length of the second port is 1.05mm and the width is 0.25mm, and the distance from the upper edge of the second port 239 to the upper edge of the first connecting section of the upper connecting branch is 0.54mm.
The structural design is designed based on the technical index to be achieved by the microstrip filter under the condition of small size, the band-pass filtering range of the microstrip filter is 13.55GHz-14.7GHz, the insertion loss of the passband is less than or equal to 6dB, the in-band ripple is less than or equal to 1dB, the VSWR is less than or equal to 1.3, and the out-of-band rejection is realized: 50dBc or more and 15.6GHz or more and 40dBc or more in the range of 10.95GHz-12.8 GHz.
In addition, the length of the whole radio frequency microstrip filter is only 11.87mm, the height is less than 2mm, the thickness of the microwave metal bands is 0.19mm, and the thickness of the microwave metal bands arranged on the ceramic substrate is 0.254mm. The radio frequency microstrip filter has a small volume structure, and is suitable for use of a miniaturized ODU emission channel.
Further, fig. 11 shows an actual circuit composition diagram of the rf circuit. Including a mixer 41, a first stage rf filter 421, a first stage rf gain amplifier 431, a second stage rf filter 422, a second stage rf gain amplifier 432 and rf power amplifier 433, and a cavity filter 44. It can also be seen that the mixer 41, the first stage rf filter 421 and the first stage rf gain amplifier 431 in fig. 11 are laterally distributed, and then the first stage rf gain amplifier 431 is electrically connected to the vertically arranged second stage rf gain amplifier 432 through the turning microstrip line W0, and the matching attenuator 203 is further provided between the turning microstrip line W0 and the second stage rf gain amplifier 432. In this way, the second stage rf filter 422, the second stage rf gain amplifier 432 and the rf power amplifier 433 are vertically distributed, and the second stage rf gain amplifier 432 and the rf power amplifier 433 are electrically connected through the first microstrip line W1, and the rf power amplifier 433 is electrically connected to the cavity filter 44 through the second microstrip line W2.
The spatial arrangement of the rf circuit shown in fig. 11 allows the entire rf circuit path to be in an inverted-L configuration, which accommodates the miniaturization design requirements and maximizes the length of the rf circuit in a limited space. And furthermore, the metal walls are arranged on two sides of the radio frequency circuit channel, so that the radio frequency power amplifier is connected from the frequency mixer, and the radio frequency power amplifier comprises the second microstrip line W2 which is arranged in a continuous and independent metal cavity, so that the whole radio frequency circuit is shielded by the metal cavity and cannot be disturbed by external electromagnetic interference signals.
Preferably, the mixer 41 includes a chip NC17104C-620, wherein the local oscillator input of the chip is electrically connected to the output of the local oscillator filter through gold. The intermediate frequency input terminal is electrically connected to the output terminal of the first matching attenuation chip TGL4201 through a gold wire, and the input terminal of the first matching attenuation chip TGL4201 is also connected to the output terminal of the intermediate frequency circuit through a gold wire. The rf output end of the chip NC17104C-620 is electrically connected to the input end of the second matching attenuation chip TGL4201 through a gold band, and the output end of the second matching attenuation chip TGL4201 is electrically connected to the first port of the first stage rf filter (i.e., rf microstrip filter) through a gold band JD 3.
Preferably, the diameter of the gold wire is 25um, the width of the gold belt is 75um, and the gold wire and the gold belt are electrically connected in the radio frequency circuit, so that the conductivity of radio frequency signals can be improved, the transmission loss can be reduced, and the radio frequency characteristics of the radio frequency channel circuit can be guaranteed while the cost can be increased. Preferably, two wires are arranged at two ends of the first matching attenuation chip TGL4201, so that radio frequency conduction characteristics can be guaranteed, and cost can be reduced to the greatest extent. Preferably, the frequency range of the intermediate frequency signal is 950MHz-1700MHz, the frequency of the local oscillator signal is 12.8GHz, and the frequency range of the radio frequency signal is 13.75GHz-14.5GHz.
Further, the first stage rf gain amplifier 431 includes a chip CHA3666, where the rf input end of the chip is electrically connected to the output end of the third matching attenuation chip TGL4201 through a gold band, and the input end of the third matching attenuation chip TGL4201 is connected to the second port of the first stage rf filter through a gold band. The radio frequency output end of the chip CHA3666 is connected with the turning microstrip line W0 through a gold band. Chip CHA3666 is powered by a dc 4V voltage.
The second stage rf gain amplifier 432 also includes a chip CHA3666 having the same circuit composition as the first stage rf gain amplifier 431 and will not be described again. It can be seen that the chip CHA3666 is used as a core of the gain amplifier, and the chip also includes the patch capacitors, which occupy a smaller volume, so that the volume of the whole gain amplifier is smaller, and the gain amplifier is suitable for the miniaturization requirement. In addition, the chip and the capacitors are connected through the gold wire and the gold belt, and the capacitors are also connected through the gold wire and the gold belt, so that the radio frequency conductivity of the chip and the capacitors in electric connection can be enhanced, and the radio frequency characteristic of gain amplification is ensured.
Further, the rf power amplifier 433 includes a chip TGA2533, where an rf signal input end of the chip is electrically connected to the first microstrip line W1 in fig. 11 through a gold strap, and an rf signal output end of the chip is electrically connected to the 9 of the second microstrip line W2 in fig. 11 through a gold strap, and is further connected to a dc 6V voltage and a dc-0.55V voltage, respectively.
The chip TGA2533 is adopted as a core to serve as the radio frequency power amplifier, the chip and the patch capacitors are included, and the capacitors occupy a small volume, so that the volume of the whole radio frequency power amplifier is small, and the radio frequency power amplifier meets the requirement of miniaturization. In addition, the chip TGA2533 is connected with the capacitors through the gold wires and the gold belts, and the capacitors are also connected through the gold wires and the gold wires, so that the radio frequency conductivity of the chip electrically connected with the capacitors can be enhanced, and the radio frequency characteristic of power amplification is ensured.
In combination with the above circuit composition, the chip CH3666 is selected as the gain amplifier, because the power of the obtained rf signal is about-20 dBm after passing through the mixer, the matching attenuator and the first stage rf microstrip filter, and the power of the rf signal reaching the cavity filter finally is about 25dBm, and here, the power amplification of the rf channel of 45dB is required. The gain value of the chip CH3666 is 20dB, the 1dB compression point (P1 dB) of the output power is 15dBm at minimum, so after CH3666 is used as a first-stage gain amplifier, the output is 0dBm for the radio frequency input signal of-20 dBm, which is far smaller than 15dBm corresponding to the 1dB compression point, and when the power of the radio frequency signal reaches the second-stage radio frequency gain amplifier chip CH3666 after the first-stage gain amplifier, which is about-10 dBm, wherein the second-stage radio frequency filter is a microstrip filter, has 6dB channel attenuation, and two matched attenuators are respectively provided with 3dB channel attenuation, so after the radio frequency signal passes through the second-stage radio frequency gain amplifier chip CH3666, the output radio frequency signal power is 10dBm, which is still smaller than 15m corresponding to the 1dB compression point, and the integrity and the good dBm of the radio frequency signal are still ensured. However, if the first-stage gain amplification is used at this time, that is, the third-stage gain amplification is implemented by using the chip CH3666, since the input power is 10dBm, when the gain of 20dB is present, the output is 30dBm, which obviously exceeds 15dBm corresponding to the 1dB compression point, and signal distortion is obviously caused. Therefore, the rf power amplifier chip TGA2533 is selected, the 1dB compression point of the output power of the chip corresponds to 34dBm, the corresponding output power should not be greater than the value, and the amplification gain of the chip has a range of 24-28dB, so when the rf signal with 10dBm power is output by the second stage rf gain amplifier chip CH3666, the rf signal can be directly input to the rf power amplifier chip TGA2533 for power amplification, and the output rf signal power is 34-38dBm, wherein 34dBm is exactly 1dB compression point of the output power of the chip, so that the maximum output rf signal power can be satisfied, and good signal integrity can be maintained.
In addition, the two-stage radio frequency filters are microstrip filters with the same structure, the first radio frequency filter is used for carrying out band-pass filtering on radio frequency signals obtained after mixing and restraining intermodulation products after mixing, and the second radio frequency filter is arranged behind the first radio frequency gain amplifier and mainly used for carrying out restraining filtering on clutter components caused by nonlinear distortion possibly generated by gain amplification, overcoming the change of frequency components caused by gain amplification and restraining the power increase of out-of-band signals caused by gain amplification synchronization. The purpose of setting the cavity filter after the radio frequency power amplifier is to reduce the insertion loss as much as possible, so as to obtain larger out-of-band rejection.
Preferably, the in-band insertion loss of the cavity filter is less than or equal to 0.5dB, which is obviously less than the insertion loss of 6dB of the microstrip filter, and the out-of-band rejection is as follows: the out-of-band rejection ratio was 50dB in the range of 10.95GHz-12.75GHz, and the out-of-band rejection ratio was 30dB at 14.7 GHz. Further preferably, the size of the cavity filter is 50mm multiplied by 13.5mm multiplied by 8.73mm, the band pass is 13.75GHz-14.5GHz, the in-band insertion loss is less than or equal to 0.5dB, and the in-band fluctuation is less than or equal to +/-0.2 dB.
The chip CH3666 is selected as the gain amplifier because the power of the rf signal obtained after passing through the mixer, the matching attenuator, and the first stage rf microstrip filter is about-20 dBm, and the power of the rf signal reaching the cavity filter at last is about 25dBm, which requires 45dB rf channel power amplification. The gain value of the chip CH3666 is 20dB, the 1dB compression point (P1 dB) of the output power is 15dBm at minimum, so after CH3666 is used as a first-stage gain amplifier, the output is 0dBm, which is far smaller than 15dBm corresponding to the 1dB compression point, for the radio frequency input signal of-20 dBm, after the first-stage gain amplifier, the power of the radio frequency signal reaches the second-stage gain amplifier chip CH3666, the power of the radio frequency signal is about-10 dBm, wherein the second-stage radio frequency filter is a microstrip filter, the channel attenuation is 6dB, and the two matched attenuators are 3dB, so after the radio frequency signal passes through the second-stage gain amplifier chip CH3666, the output radio frequency signal power is 10dBm, which is still smaller than 15dBm corresponding to the 1dB compression point, and the integrity and the good performance of the radio frequency signal are still ensured. However, if the chip CH3666 is used again and gain amplified at this time, since its input power is 10dBm, when there is a gain of 20dB, the output is 30dBm, which obviously exceeds 15dBm corresponding to a compression point of 1dB, which obviously causes signal distortion. Therefore, the power amplifier chip TGA2533 is selected, the 1dB compression point of the output power of the chip corresponds to 34dBm, the corresponding output power is not larger than the value, the amplification gain of the chip has a range of 24-28dB, therefore, when the second-stage gain amplifier chip CH3666 outputs a radio frequency signal with 10dBm power, the radio frequency signal can be directly input into the power amplifier chip TGA2533 for power amplification, the output radio frequency signal power is 34-38dBm, wherein 34dBm is exactly 1dB compression point of the output power of the chip, and therefore, the maximum output radio frequency signal power can be exactly satisfied, and meanwhile, good signal integrity can be maintained.
Further, as shown in fig. 12, the power supply circuit includes a 5V voltage input end 511 and a 6V voltage input end 512, where the 5V voltage input end 511 obtains a voltage stabilization 5V after passing through the first power supply filter network 51, and is divided into a plurality of independent power supply branches to supply power to the plurality of chips of the transmitting channel, and the 6V voltage input end 512 obtains a voltage stabilization 6V after passing through the second power supply filter network 52, and supplies power to the radio frequency power amplifier 55 in the transmitting channel. The power supply circuit can provide independent power supply branches for a plurality of chips in the transmitting channel, so that the chips with radio frequency characteristics cannot generate mutual interference of power supply, and electromagnetic compatibility is enhanced.
Further preferably, the rf power amplifier used herein is TGA2533, and the chip needs two polarities of power supply to supply power, which is 6V and-0.55V respectively. Therefore, the voltage stabilization 5V provides negative voltage power supply to the radio frequency power amplifier through the voltage transformation circuit to generate-0.55V voltage, and the voltage stabilization 6V provides positive voltage power supply to the radio frequency power amplifier through the protection circuit to provide 6V voltage.
As shown in fig. 13, a voltage transformation circuit is shown, which includes a chip LTC1983ES6-5 and a chip AD 8615-AUJZ, and the regulated 5V voltage is electrically connected to the power supply terminal of the chip LTC1983ES6-5 through series inductors L15 and L14. The power end is also electrically connected with the bypass capacitor C82 and grounded, and the voltage output end of the chip is connected with the chip AD8615AUJZ through a voltage division network. Specifically, the voltage output end of the chip LTC1983ES6-5 is connected in series with the resistor R35 and then connected to the 3 rd pin of the chip AD8615AUJZ, the pin is also electrically connected with the other resistor R36, the other end of the resistor R36 is grounded, and the voltage output end of the chip LTC1983ES6-5 is also directly electrically connected with the 2 nd pin of the chip AD8615AUJZ. The 1 st and 4 th pins of the chip AD8615AUJZ are electrically connected, and the 4 th pin is also connected with bypass capacitors C86 and C85, c85=0.1 uf, c86=1 nF as a voltage output pin. The 4 th pin output voltage is the negative polarity voltage output to the radio frequency power amplifier. The negative polarity voltage is output by chip AD8615AUJZ, which is-0.55V.
Further, as shown in fig. 14, the 6V voltage output protection circuit comprises a triode MMBT3904 and a PMOS tube IRF7210PBF, the voltage stabilizing 5V is connected in series with a resistor R34 and then is electrically connected to the base electrode of the triode MMBT3904, the emitter electrode of the triode MMBT3904 is grounded, the collector electrode is connected in series with a first voltage dividing resistor R31 and a second voltage dividing resistor R30, the gate electrode of the PMOS tube IRF7210PBF is electrically connected between the first voltage dividing resistor R31 and the second voltage dividing resistor R30, the other end of the second voltage dividing resistor R30 is electrically connected to the source electrode of the PMOS tube IRF7210PBF, and the voltage stabilizing 6V is also electrically connected to the source electrode of the PMOS tube IRF7210PBF, and the drain electrode of the PMOS tube IRF7210PBF is electrically connected to the positive electrode terminal of the power supply of the radio frequency power amplifier.
Preferably, the resistance values of the first voltage dividing resistor and the second voltage dividing resistor are 50kΩ. When the voltage stabilizing 5V is normal, the triode MMBT3904 is conducted, the voltage stabilizing 6V generates a pressure difference between the grid electrode G and the source electrode S of the PMOS tube IRF7210PBF through the first voltage dividing resistor R30 and the second voltage dividing resistor R31, so that the voltage stabilizing 6V is conducted to the drain electrode D, the voltage is further output to the radio frequency power amplifier, if the voltage stabilizing 5V is not added, the triode MMBT3904 is not conducted, the voltage dividing resistor 31 does not work, no pressure difference exists between the grid electrode G and the source electrode S, the PMOS tube IRF7210PBF is not conducted, and the drain electrode D cannot output the voltage stabilizing 6V.
It can be further seen that the negative voltage-0.55V is obtained by converting voltage-stabilizing 5V through the chip LTC1983ES6-5 and the chip AD8615AUJZ to voltage-stabilizing the bipolar power supply of the rf power amplifier chip TGA2533, the negative voltage is not generated under the condition that no voltage-stabilizing 5V is applied, and meanwhile, the voltage-stabilizing 6V for supplying power to the chip TGA2533 is not applied to the chip due to the action of the 6V voltage output protection circuit, so that the synchronous protection characteristic of bipolar power supply of the rf power amplifier chip TGA2533 is ensured.
Based on the above embodiment, the invention discloses a miniaturized ODU transmitting channel circuit, which comprises a power supply circuit, a local oscillation circuit, an intermediate frequency circuit and a radio frequency circuit, wherein the local oscillation circuit synthesizes the frequency of an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit filters and amplifies the input intermediate frequency signal and outputs the intermediate frequency signal, then mixes the intermediate frequency signal with the local oscillation signal in the radio frequency circuit to obtain a radio frequency signal for output, the radio frequency signal also amplifies the gain and amplifies the power in the radio frequency circuit, outputs the radio frequency signal after the radio frequency filtering, and the power supply circuit stabilizes and transforms the voltage of the input external power supply, and then provides direct current stabilized power for the local oscillation circuit, the intermediate frequency circuit and the radio frequency circuit respectively. The emission channel circuit works stably and reliably, and has the advantages of saving power consumption, reducing volume and reducing cost.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the present invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
Claims (7)
1. The miniature ODU transmitting channel circuit is characterized by comprising a power supply circuit, a local oscillation circuit, an intermediate frequency circuit and a radio frequency circuit, wherein the local oscillation circuit performs frequency synthesis on an input external reference source signal to generate a local oscillation signal, filters and amplifies the local oscillation signal, the intermediate frequency circuit filters and amplifies the input intermediate frequency signal and outputs the intermediate frequency signal, then mixes the intermediate frequency signal with the local oscillation signal in the radio frequency circuit to obtain a radio frequency signal output, the frequency range of the radio frequency signal is 13.75GHz-14.5GHz, the radio frequency signal is further subjected to gain amplification and power amplification in the radio frequency circuit and is output after radio frequency filtering, the radio frequency filtering comprises the steps of performing power amplification on the radio frequency signal and filtering the radio frequency signal through a cavity filter, and the power supply circuit performs voltage stabilization and transformation on the input external power supply and then provides direct current voltage stabilization power supply for the local oscillation circuit, the intermediate frequency circuit and the radio frequency circuit respectively;
The radio frequency circuit comprises a mixer and a radio frequency filter electrically connected with the mixer and used for inhibiting intermodulation clutter in the radio frequency signals, wherein the rear stage of the radio frequency filter is electrically connected with a radio frequency amplifier used for amplifying the radio frequency signals, and the rear stage of the radio frequency amplifier is also electrically connected with the cavity filter used for carrying out-of-band inhibition on the radio frequency signals;
The radio frequency filter comprises a first-stage radio frequency filter and a second-stage radio frequency filter; the radio frequency amplifier comprises a first-stage radio frequency gain amplifier, a second-stage radio frequency gain amplifier and a radio frequency power amplifier, wherein the output end of the mixer is electrically connected with the first-stage radio frequency filter and then sequentially connected with the first-stage radio frequency gain amplifier, the second-stage radio frequency filter, the second-stage radio frequency gain amplifier and the radio frequency power amplifier;
the mixer, the first-stage radio frequency filter and the first-stage radio frequency gain amplifier are transversely distributed, the first-stage radio frequency gain amplifier is electrically connected with a second-stage radio frequency gain amplifier which is vertically arranged through a turning microstrip line, and a matching attenuator is further arranged between the turning microstrip line and the second-stage radio frequency gain amplifier; the second-stage radio frequency filter, the second-stage radio frequency gain amplifier and the radio frequency power amplifier are vertically distributed, the second-stage radio frequency gain amplifier and the radio frequency power amplifier are electrically connected through a first microstrip line, and the radio frequency power amplifier is electrically connected with the cavity filter through a second microstrip line;
The first-stage radio frequency filter and the second-stage radio frequency filter are radio frequency microstrip filters with the same structure; the mixer comprises chips NC17104C-620, the first stage radio frequency gain amplifier and the second stage radio frequency gain amplifier comprise chips CH3666, the radio frequency power amplifier comprises a chip TGA2533, and the matched attenuator comprises a chip TGL4201.
2. The miniaturized ODU transmission channel circuit of claim 1 wherein the local oscillator circuit comprises a local oscillator signal source comprising a frequency synthesizer and a frequency multiplier in cascade, the local oscillator signal output by the frequency multiplier being amplified in gain by a local oscillator gain amplifier and filtered by a local oscillator microstrip filter and output to a mixer in the radio frequency circuit.
3. The miniaturized ODU transmission channel circuit of claim 2 wherein the digital control interface of the frequency synthesizer is correspondingly electrically connected to a single chip microcomputer, the single chip microcomputer inputting frequency control parameters to the frequency synthesizer through the digital control interface, thereby setting the frequency of the frequency synthesizer output signal.
4. The miniaturized ODU transmission channel circuit of claim 2 wherein the intermediate frequency circuit comprises an intermediate frequency signal input that is first electrically connected to an intermediate frequency filter for filtering noise outside the intermediate frequency signal and then electrically connected to an intermediate frequency amplifier from an output of the intermediate frequency filter, the intermediate frequency amplifier power amplifying the intermediate frequency signal and outputting the intermediate frequency signal.
5. The miniaturized ODU transmission channel circuit of claim 4 further comprising a temperature compensation attenuator in series between the intermediate frequency signal input and the intermediate frequency filter.
6. The miniaturized ODU transmit channel circuit of claim 1 wherein the power supply circuit comprises a 5V voltage input and a 6V voltage input, the 5V voltage input being regulated by a first power supply filter network and divided into a plurality of independent power supply branches to supply power to the plurality of chips of the transmit channel circuit respectively, the 6V voltage input being regulated by a second power supply filter network to supply power to the radio frequency power amplifier in the transmit channel circuit.
7. The miniaturized ODU transmit channel circuit of claim 6 wherein the regulated 5V provides a negative voltage supply to the radio frequency power amplifier via a voltage transformation circuit that generates a voltage of-0.55V and the regulated 6V provides a positive voltage supply to the radio frequency power amplifier via a protection circuit that provides a voltage of 6V.
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