CN214851148U - S-band power amplification assembly - Google Patents

S-band power amplification assembly Download PDF

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CN214851148U
CN214851148U CN202120322565.7U CN202120322565U CN214851148U CN 214851148 U CN214851148 U CN 214851148U CN 202120322565 U CN202120322565 U CN 202120322565U CN 214851148 U CN214851148 U CN 214851148U
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pole double
stage amplifier
throw switch
power
output
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计雷雷
殷英
吕倩
孙统雷
乔彦鹏
贾会
王浩搏
张元申
张九成
韩晓洁
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Beijing Aerospace Science & Industry Century Satellite Hi Tech Co ltd
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Beijing Aerospace Science & Industry Century Satellite Hi Tech Co ltd
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Abstract

The utility model discloses a S wave band power amplification subassembly relates to the communication technology field, and this subassembly can realize the power amplification to antenna received signal at the S wave band, and can avoid noise jamming and clutter interference. The input port of the pi-type attenuator is used as the input end of a radio frequency signal, and the pi-type attenuator, the electrically-tuned attenuator, the first-stage amplifier, the second-stage amplifier, the dielectric filter, the first isolator and the third-stage amplifier are sequentially connected. The output end of the third-stage amplifier is connected with the fixed end of the first single-pole double-throw switch; one moving end of the first single-pole double-throw switch is connected with the input end of the fourth-stage amplifier, and the other moving end of the first single-pole double-throw switch is connected with the first moving end of the second single-pole double-throw switch. The fourth stage amplifier is connected with the fifth stage amplifier. The second moving end of the second single-pole double-throw switch is connected with the output end of the fifth-stage amplifier; the stationary end of the second single-pole double-throw switch is subsequently connected with the second isolator, the cavity filter and the output switch set in sequence, and four-way power amplifier output is achieved.

Description

S-band power amplification assembly
Technical Field
The utility model relates to the field of communication technology, concretely relates to S wave band power amplification subassembly.
Background
In communication, a solid-state power amplifier component is used as a core component of a solid-state transmitter, is also a hot door for research and development, and power amplification components with different wave bands are researched, developed and produced.
However, with the development of communication, spectrum resources are more and more strained, communication frequency band intervals are also smaller and smaller, one device may be equipped with a plurality of communication devices, and a conventional power amplification component can output harmonic waves and raise out-of-band noise bases in the current working background. The sensitivity of receiving equipment of the equipment working in the S wave band is less than or equal to minus 120dBm, the receiving power is lower, and when the transmitting assembly outputs high power, the raised noise bottom is higher than minus 120dBm, even higher, noise interference can be brought; or the harmonic wave output by the power amplifier just falls into the receiving equipment band, so that clutter interference can be brought, and the receiving equipment cannot work normally under the two conditions.
How to implement power amplification on an antenna receiving signal in an S-band and avoid noise interference and clutter interference is a problem to be solved urgently at present.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a S wave band power amplification subassembly can realize the power amplification to antenna received signal at the S wave band, and can avoid noise interference and clutter interference.
In order to achieve the above purpose, the technical scheme of the utility model is that: an S-band power amplification assembly comprises a pi-type attenuator, an electrically-tuned attenuator, a first-stage amplifier, a second-stage amplifier, a dielectric filter, a first isolator, a third-stage amplifier, a first single-pole double-throw switch, a fourth-stage amplifier, a fifth-stage amplifier, a low-power link, a second single-pole double-throw switch, a second isolator, a cavity filter and an output switch group.
The connection relationship is as follows:
the input port of the pi-type attenuator is used as the input end of the radio frequency signal, and the output end of the pi-type attenuator is connected with the input end of the electrically-tuned attenuator.
The output end of the electrically-tuned attenuator is connected to the input end of the dielectric filter through the first-stage amplifier and the second-stage amplifier.
The output end of the dielectric filter is connected to the input end of the third-stage amplifier through the first isolator.
The output end of the third-stage amplifier is connected with the fixed end of the first single-pole double-throw switch; one moving end of the first single-pole double-throw switch is connected with the input end of the fourth-stage amplifier, and the other moving end of the first single-pole double-throw switch is connected with the first moving end of the second single-pole double-throw switch.
The fourth stage amplifier is connected with the fifth stage amplifier.
The second moving end of the second single-pole double-throw switch is connected with the output end of the fifth-stage amplifier; the fixed end of the second single-pole double-throw switch is connected with the input end of the second isolator.
The output end of the second isolator is connected with the input end of the cavity filter.
The output end of the cavity filter realizes four-way power amplifier output through the output switch group.
Furthermore, the output switch group comprises three single-pole double-throw switches, namely a third single-pole double-throw switch, a fourth single-pole double-throw switch and a fifth single-pole double-throw switch; wherein:
the fixed end of the third single-pole double-throw switch is connected with the output end of the cavity filter; two movable ends of the third single-pole double-throw switch are respectively connected with the immovable end of the fourth single-pole double-throw switch and the immovable end of the fifth single-pole double-throw switch.
And two moving ends of the fourth single-pole double-throw switch and two moving ends of the fifth single-pole double-throw switch are used as four-way power amplifier output.
Further, the electrically-tuned attenuator selects WSBA 000080X;
the first stage amplifier of (1) is BW553SM 4M;
the second stage amplifier is TQP7M 9103;
the third stage amplifier adopts TGA 2237-SM;
the fourth-stage amplifier adopts a CaN power tube CGH40010F, the output power of the fourth-stage amplifier is designed to be +35.6dBm, and the power consumption is 12.5W.
TGF2929-FL is selected as the fifth-stage amplifier, the design output power of the fifth-stage amplifier is +48.6dBm, and the power consumption is 131W.
Further, both the first and second single pole double throw switches are selected from the group consisting of ADRF 5130;
further, the third to fifth single-pole double-throw switches are all selected from the ADRF 5130.
Further, the cavity filter indexes are as follows: the power spectral density is less than or equal to-148 dBm/Hz; inserting loss: less than or equal to 0.8 dB; out-of-band suppression: not less than 60dB @ F0 +/-300 MHz; power capacity: not less than 100W; standing waves: less than or equal to 1.4.
Has the advantages that:
the utility model provides an S-band power amplification component, which adds a cavity filter capable of bearing high power behind an isolator output by a final-stage power amplifier, and further inhibits the output of 0 dBc; and reducing the out-of-band noise floor to make the power spectral density of the out-of-band noise floor less than or equal to-148 dBm/Hz. Therefore, the power amplification of the antenna receiving signal in the S wave band is realized, and noise interference and clutter interference can be avoided.
Drawings
Fig. 1 is a block diagram of the S-band power amplifying module provided by the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings by way of examples.
The utility model provides a S wave band power amplification subassembly, it constitutes as shown in figure 1, include: the device comprises a pi-type attenuator, an electrically-tuned attenuator, a first-stage amplifier, a second-stage amplifier, a dielectric filter, a first isolator, a third-stage amplifier, a first single-pole double-throw switch, a fourth-stage amplifier, a fifth-stage amplifier, a low-power link, a second single-pole double-throw switch, a second isolator, a cavity filter and an output switch group.
The connection relationship is as follows:
the input port of the pi-type attenuator is used as the input end of the radio frequency signal, and the output end of the pi-type attenuator is connected with the input end of the electrically-tuned attenuator. Wherein radio frequency signal input level is 0dBm, the utility model discloses a pi type attenuator has been designed at the radio frequency input end for the gain of adjustment radio frequency link improves the standing wave of input port.
The output end of the electrically-tuned attenuator is connected to the input end of the dielectric filter through the first-stage amplifier and the second-stage amplifier. An electrically-tuned attenuator is designed behind the pi-type attenuator to control the gain of a link. The compensation power amplifier switches the large power and the small power and changes the link gain under high and low temperature, and the stability of the output power is ensured. In the embodiment of the utility model, the embodiment is provided. The electrically-tuned attenuator adopts WSBA 000080X. The single-chip amplifier BW553SM4M is selected as the first-stage amplifier, the working frequency range is 1-6 GHz, the gain is about 20dB in the range of S wave band, the output power of 1dB compression point is 17dBm, the output level is 15.5dBm after the first-stage amplifier is amplified, and the power consumption is aboutIs 0.3W. The second stage amplifier is monolithic TQP7M9103 with a gain of about 14dB and P in the S-band-129.5 dBm; after the second stage of amplification, a dielectric filter is designed to suppress out-of-band noise and filter out modulated out-of-band spurs.
The output end of the dielectric filter is connected to the input end of the third-stage amplifier through the first isolator.
The output end of the third-stage amplifier is connected with the fixed end of the first single-pole double-throw switch; one moving end of the first single-pole double-throw switch is connected with the input end of the fourth-stage amplifier, and the other moving end of the first single-pole double-throw switch is connected with the first moving end of the second single-pole double-throw switch. The third-stage amplifier adopts a monolithic amplifier TGA2237-SM, the working frequency range of the third-stage amplifier is 0.03-2.5 GHz, the gain in the S wave band range is about 17dB, and the saturation output power is more than or equal to 40 dBm. And a single-pole double-throw switch is designed after the third-stage amplification, so that the link selection of large power and small power is realized. The switch selects ADRF5130, with insertion loss of 0.6dB and P0.1dBIs 46 dBm.
The fourth-stage amplifier and the fifth-stage amplifier are connected to form a high-power link, and the other moving end of the first single-pole double-throw switch is directly connected with the second moving end of the second single-pole double-throw switch to form a low-power link. The second moving end of the second single-pole double-throw switch is connected with the output end of the fifth-stage amplifier; the fixed end of the second single-pole double-throw switch is connected with the input end of the second isolator.
(a) When the power amplifier module works in a high-power state, the switch is conducted to a high-power link, two-stage power amplification is designed, and high-power output is realized.
The fourth-stage amplifier of the high-power link selects a CaN power tube CGH40010F, the working frequency range of the fourth-stage amplifier is DC-6 GHz, the gain of the fourth-stage amplifier in the S wave band range is about 15dB, the output power of a 3dB compression point is 41.5dBm, the drain efficiency is 65%, the output power of the fourth-stage amplifier is +35.6dBm, and the power consumption is 12.5W.
The fifth stage of amplification selects TGF2929-FL, the working frequency range is DC-3.5 GHz, the gain of the fifth stage of amplification is about 13dB in the S wave band range, the output power of a 3dB compression point is 51dBm, the drain efficiency is 70%, the output power of the fifth stage of amplification design is +48.6dBm, and the power consumption is about 131W.
(b) When the power amplifier module works in a low-power state, the switch is conducted to the low-power link, and the gain of the low-power link is adjusted by controlling the electrically-tuned attenuator.
A single-pole double-throw switch is designed at the output end of the fifth-stage amplifier of the large and small power links, and output selection is realized through an external control signal.
The output end of the second isolator is connected with the input end of the cavity filter. Design cavity filter between second isolator and the output switch group, the filtering outband is stray, reduces the outband noise end, and power spectral density less than or equal to-148 dBm/Hz is the utility model discloses the place of core optimization.
The cavity filter has the following indexes:
inserting loss: not more than 0.8dB
Out-of-band suppression: not less than 60dB @ F0 +/-300 MHz
Power capacity: not less than 100W
Standing waves: less than or equal to 1.4
After the radio frequency signal passes through the amplifying link, the power of the output port is 46.5dBm and the total power consumption of the link is about 150W in a high-power output state, and the power of the output port is 33.5dBm and the power consumption of the link is about 10.9W in a low-power output state. Since the conversion efficiency of the power module is 94%, the total power consumption of the power module is about 159.5W in the high-power state. The power consumption in the low power state is about 20W.
The output end of the cavity filter realizes four-way power amplifier output through the output switch group. Because the power amplifier module has the four-way output function, the output end of the power amplifier module is provided with three single-pole double-throw switches to realize the four-way output function, and the output selection function is realized through an external control signal.
The output switch group provided in the embodiment of the present invention includes three single-pole double-throw switches, which are respectively a third single-pole double-throw switch, a fourth single-pole double-throw switch and a fifth single-pole double-throw switch; wherein the immobile end of the third single-pole double-throw switch is connected with the output end of the cavity filter; two moving ends of the third single-pole double-throw switch are respectively connected with the immobile end of the fourth single-pole double-throw switch and the immobile end of the fifth single-pole double-throw switch; and two moving ends of the fourth single-pole double-throw switch and two moving ends of the fifth single-pole double-throw switch are used as four-way power amplifier output.
For the protection the utility model discloses in the single-pole double-throw switch who uses, extension switch life, when radio frequency switch switches in the power amplifier working process, the power amplifier is according to the first silence to the radio frequency amplification link of on-off control instruction, and the radio frequency amplification link goes up electric work again after the switch switching finishes.
TABLE 1A high-Power State radio frequency Link level-gain and level Allocation
Figure DEST_PATH_GDA0003281862630000061
Figure DEST_PATH_GDA0003281862630000071
TABLE 1B Low Power State radio frequency Link level-gain and level Allocation
Figure DEST_PATH_GDA0003281862630000072
In summary, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (5)

1. An S-band power amplifying assembly, comprising: the power amplifier comprises a pi-type attenuator, an electrically-tuned attenuator, a first-stage amplifier, a second-stage amplifier, a dielectric filter, a first isolator, a third-stage amplifier, a first single-pole double-throw switch, a fourth-stage amplifier, a fifth-stage amplifier, a low-power link, a second single-pole double-throw switch, a second isolator, a cavity filter and an output switch group;
the connection relationship is as follows:
the input port of the pi-type attenuator is used as the input end of a radio frequency signal, and the output end of the pi-type attenuator is connected with the input end of the electrically-tuned attenuator;
the output end of the electrically-tuned attenuator is connected to the input end of the dielectric filter through a first-stage amplifier and a second-stage amplifier;
the output end of the dielectric filter is connected to the input end of the third-stage amplifier through a first isolator;
the output end of the third-stage amplifier is connected with the fixed end of the first single-pole double-throw switch; one moving end of the first single-pole double-throw switch is connected with the input end of the fourth-stage amplifier, and the other moving end of the first single-pole double-throw switch is connected with the first moving end of the second single-pole double-throw switch;
the fourth-stage amplifier is connected with the fifth-stage amplifier;
the second moving end of the second single-pole double-throw switch is connected with the output end of the fifth-stage amplifier; the fixed end of the second single-pole double-throw switch is connected with the input end of the second isolator;
the output end of the second isolator is connected with the input end of the cavity filter;
the output end of the cavity filter realizes four-way power amplifier output through the output switch group.
2. The power amplification assembly of claim 1, wherein the output switch set comprises three single-pole double-throw switches, a third single-pole double-throw switch, a fourth single-pole double-throw switch, and a fifth single-pole double-throw switch; wherein:
the fixed end of the third single-pole double-throw switch is connected with the output end of the cavity filter; two moving ends of the third single-pole double-throw switch are respectively connected with the immobile end of the fourth single-pole double-throw switch and the immobile end of the fifth single-pole double-throw switch;
and two moving ends of the fourth single-pole double-throw switch and two moving ends of the fifth single-pole double-throw switch are used as four-way power amplifier output.
3. The power amplification assembly of claim 1 or claim 2, wherein the electrically tunable attenuator is selected from the group consisting of WSBA 000080X;
the first stage amplifier adopts BW553SM 4M;
the second stage amplifier is TQP7M 9103;
the third stage amplifier adopts TGA 2237-SM;
a CaN power tube CGH40010F is selected as the fourth-stage amplifier, the output power of the fourth-stage amplifier is designed to be +35.6dBm, and the power consumption is 12.5W;
TGF2929-FL is selected as the fifth-stage amplifier, the design output power of the fifth-stage amplifier is +48.6dBm, and the power consumption is 131W.
4. A power amplifying assembly according to claim 1 or claim 2 wherein the first and second single pole double throw switches are each optionally ADRF 5130.
5. The power amplifying assembly according to claim 2, wherein the third to fifth single-pole double-throw switches are selected from the group consisting of ADRF 5130.
CN202120322565.7U 2021-02-03 2021-02-03 S-band power amplification assembly Active CN214851148U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114244378A (en) * 2021-12-13 2022-03-25 遨海科技有限公司 VDES transmitter capable of dynamically outputting power
CN115833765A (en) * 2023-02-21 2023-03-21 成都川美新技术股份有限公司 Adjustable gain amplifier equipment
CN116111959A (en) * 2023-02-08 2023-05-12 广东海洋大学 Power amplifying circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114244378A (en) * 2021-12-13 2022-03-25 遨海科技有限公司 VDES transmitter capable of dynamically outputting power
CN116111959A (en) * 2023-02-08 2023-05-12 广东海洋大学 Power amplifying circuit
CN116111959B (en) * 2023-02-08 2023-09-01 广东海洋大学 Power amplifying circuit
CN115833765A (en) * 2023-02-21 2023-03-21 成都川美新技术股份有限公司 Adjustable gain amplifier equipment

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