CN109076180B - 摄像元件及摄像装置 - Google Patents

摄像元件及摄像装置 Download PDF

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Publication number
CN109076180B
CN109076180B CN201780025799.1A CN201780025799A CN109076180B CN 109076180 B CN109076180 B CN 109076180B CN 201780025799 A CN201780025799 A CN 201780025799A CN 109076180 B CN109076180 B CN 109076180B
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signal
image pickup
pixels
holding portion
pickup element
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Chinese (zh)
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CN109076180A (zh
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驹井敦
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Nikon Corp
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Nikon Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201780025799.1A 2016-02-29 2017-02-27 摄像元件及摄像装置 Active CN109076180B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111356352.7A CN114007024A (zh) 2016-02-29 2017-02-27 摄像元件及摄像装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-038161 2016-02-29
JP2016038161 2016-02-29
PCT/JP2017/007548 WO2017150469A1 (ja) 2016-02-29 2017-02-27 撮像素子および撮像装置

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CN202111356352.7A Division CN114007024A (zh) 2016-02-29 2017-02-27 摄像元件及摄像装置

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CN109076180B true CN109076180B (zh) 2021-12-07

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US (3) US10879300B2 (enExample)
EP (1) EP3425902B1 (enExample)
JP (2) JP7075881B2 (enExample)
CN (2) CN114007024A (enExample)
WO (1) WO2017150469A1 (enExample)

Citations (3)

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CN101840926A (zh) * 2009-03-17 2010-09-22 索尼公司 固态成像装置及其制造方法、驱动方法、以及电子设备
CN104010141A (zh) * 2013-02-26 2014-08-27 株式会社东芝 固体摄像装置
CN105210363A (zh) * 2014-03-17 2015-12-30 索尼公司 固体摄像器件、固体摄像器件的驱动方法和电子设备

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JP2001045375A (ja) 1999-08-03 2001-02-16 Canon Inc 撮像装置とその読み出し方法
JP4809999B2 (ja) * 2001-05-25 2011-11-09 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP4724313B2 (ja) 2001-05-18 2011-07-13 キヤノン株式会社 撮像装置、放射線撮像装置及びそれを用いた放射線撮像システム
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
JP4323772B2 (ja) * 2002-10-31 2009-09-02 キヤノン株式会社 固体撮像装置、カメラ及びカメラ制御システム
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US8049293B2 (en) 2005-03-07 2011-11-01 Sony Corporation Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
TWI429066B (zh) * 2005-06-02 2014-03-01 新力股份有限公司 Semiconductor image sensor module and manufacturing method thereof
JP4830502B2 (ja) * 2006-01-17 2011-12-07 株式会社ニコン 撮像装置
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JP5627244B2 (ja) 2010-02-08 2014-11-19 キヤノン株式会社 固体撮像素子及びその駆動方法及び撮像装置
JP2011204797A (ja) * 2010-03-24 2011-10-13 Sony Corp 固体撮像装置とその製造方法、及び電子機器
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JP2015153962A (ja) 2014-02-18 2015-08-24 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
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CN105210363A (zh) * 2014-03-17 2015-12-30 索尼公司 固体摄像器件、固体摄像器件的驱动方法和电子设备

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Publication number Publication date
CN109076180A (zh) 2018-12-21
EP3425902A4 (en) 2019-09-18
JP7238875B2 (ja) 2023-03-14
US20210074756A1 (en) 2021-03-11
WO2017150469A1 (ja) 2017-09-08
EP3425902A1 (en) 2019-01-09
JP7075881B2 (ja) 2022-05-26
JPWO2017150469A1 (ja) 2019-01-24
US10879300B2 (en) 2020-12-29
US12199126B2 (en) 2025-01-14
US20190131338A1 (en) 2019-05-02
JP2021036589A (ja) 2021-03-04
EP3425902B1 (en) 2023-10-25
US20250107254A1 (en) 2025-03-27
CN114007024A (zh) 2022-02-01

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