CN109075045A - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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- CN109075045A CN109075045A CN201780021670.3A CN201780021670A CN109075045A CN 109075045 A CN109075045 A CN 109075045A CN 201780021670 A CN201780021670 A CN 201780021670A CN 109075045 A CN109075045 A CN 109075045A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 209
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 229920005989 resin Polymers 0.000 claims abstract description 135
- 239000011347 resin Substances 0.000 claims abstract description 135
- 238000000034 method Methods 0.000 claims abstract description 111
- 230000008569 process Effects 0.000 claims abstract description 94
- 239000012528 membrane Substances 0.000 claims abstract description 59
- 229920006015 heat resistant resin Polymers 0.000 claims abstract description 55
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 49
- -1 polybutylene terephthalate Polymers 0.000 claims description 32
- 230000002285 radioactive effect Effects 0.000 claims description 26
- 238000004132 cross linking Methods 0.000 claims description 16
- 229920001971 elastomer Polymers 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 9
- 239000000806 elastomer Substances 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 7
- 229920000728 polyester Polymers 0.000 claims description 7
- 150000001336 alkenes Chemical class 0.000 claims description 6
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 6
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 5
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 150000003949 imides Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 151
- 239000000758 substrate Substances 0.000 description 33
- 238000005520 cutting process Methods 0.000 description 25
- 239000000178 monomer Substances 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 16
- 239000012790 adhesive layer Substances 0.000 description 15
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- 239000003431 cross linking reagent Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 150000002148 esters Chemical class 0.000 description 12
- 230000009471 action Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 8
- 125000005250 alkyl acrylate group Chemical group 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 244000028419 Styrax benzoin Species 0.000 description 4
- 235000000126 Styrax benzoin Nutrition 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 235000008411 Sumatra benzointree Nutrition 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 235000019382 gum benzoic Nutrition 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000012948 isocyanate Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 4
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 3
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Natural products CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 description 3
- 239000004088 foaming agent Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- 150000001451 organic peroxides Chemical class 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000012719 thermal polymerization Methods 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 2
- OVBFMUAFNIIQAL-UHFFFAOYSA-N 1,4-diisocyanatobutane Chemical compound O=C=NCCCCN=C=O OVBFMUAFNIIQAL-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DJOWTWWHMWQATC-KYHIUUMWSA-N Karpoxanthin Natural products CC(=C/C=C/C=C(C)/C=C/C=C(C)/C=C/C1(O)C(C)(C)CC(O)CC1(C)O)C=CC=C(/C)C=CC2=C(C)CC(O)CC2(C)C DJOWTWWHMWQATC-KYHIUUMWSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 2
- 229940018557 citraconic acid Drugs 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 description 2
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 2
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 description 2
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000005056 polyisocyanate Substances 0.000 description 2
- 229920001228 polyisocyanate Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920006389 polyphenyl polymer Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 2
- 235000019394 potassium persulphate Nutrition 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
- 229920006300 shrink film Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- LGXVIGDEPROXKC-UHFFFAOYSA-N 1,1-dichloroethene Chemical group ClC(Cl)=C LGXVIGDEPROXKC-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical class S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- LRJKOALZSYELNZ-UHFFFAOYSA-N 2-(2,4,6-trioxo-1,3,5-triazinan-1-yl)ethyl 2-methylprop-2-enoate Chemical class CC(=C)C(=O)OCCN1C(=O)NC(=O)NC1=O LRJKOALZSYELNZ-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- BEWCNXNIQCLWHP-UHFFFAOYSA-N 2-(tert-butylamino)ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCNC(C)(C)C BEWCNXNIQCLWHP-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- UUODQIKUTGWMPT-UHFFFAOYSA-N 2-fluoro-5-(trifluoromethyl)pyridine Chemical compound FC1=CC=C(C(F)(F)F)C=N1 UUODQIKUTGWMPT-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- RPBWMJBZQXCSFW-UHFFFAOYSA-N 2-methylpropanoyl 2-methylpropaneperoxoate Chemical compound CC(C)C(=O)OOC(=O)C(C)C RPBWMJBZQXCSFW-UHFFFAOYSA-N 0.000 description 1
- YYPNJNDODFVZLE-UHFFFAOYSA-N 3-methylbut-2-enoic acid Chemical compound CC(C)=CC(O)=O YYPNJNDODFVZLE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- MUPIEMDDBGZNRU-UHFFFAOYSA-N C(C)(C)C(=O)O.C(C)(C)(C)OO Chemical compound C(C)(C)C(=O)O.C(C)(C)(C)OO MUPIEMDDBGZNRU-UHFFFAOYSA-N 0.000 description 1
- FVLVWBKHSDWKMM-UHFFFAOYSA-N CC(C)(C)OO.CCCCC(CC)C(O)=O Chemical compound CC(C)(C)OO.CCCCC(CC)C(O)=O FVLVWBKHSDWKMM-UHFFFAOYSA-N 0.000 description 1
- 208000019300 CLIPPERS Diseases 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004727 Noryl Substances 0.000 description 1
- 229920001207 Noryl Polymers 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical class C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- DDONFLBXWPGDQO-UHFFFAOYSA-N acetic acid;2-tert-butylperoxy-2-methylpropane Chemical class CC(O)=O.CC(C)(C)OOC(C)(C)C DDONFLBXWPGDQO-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000008365 aromatic ketones Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 235000013877 carbamide Nutrition 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 208000021930 chronic lymphocytic inflammation with pontine perivascular enhancement responsive to steroids Diseases 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- FFYWKOUKJFCBAM-UHFFFAOYSA-N ethenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC=C FFYWKOUKJFCBAM-UHFFFAOYSA-N 0.000 description 1
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical compound C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005456 glyceride group Chemical group 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 235000013847 iso-butane Nutrition 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N methanol Natural products OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- AUCNMQYOQYTGPE-UHFFFAOYSA-N n-(hydroxymethyl)-n-methylprop-2-enamide Chemical compound OCN(C)C(=O)C=C AUCNMQYOQYTGPE-UHFFFAOYSA-N 0.000 description 1
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- QTECDUFMBMSHKR-UHFFFAOYSA-N prop-2-enyl prop-2-enoate Chemical group C=CCOC(=O)C=C QTECDUFMBMSHKR-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- 150000005075 thioxanthenes Chemical class 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/006—Delaminating
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer
- C09J2301/162—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer the carrier being a laminate constituted by plastic layers only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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Abstract
本发明的半导体装置的制造方法至少具备以下4个工序。(A)工序,准备结构体(100),所述结构体(100)具备:依次具有耐热性树脂层(10)、柔软性树脂层(20)和粘着性树脂层(30)的粘着性叠层膜(50),以及粘贴于粘着性树脂层(30)上的1或2个以上的半导体芯片(70);(B)工序,在粘贴于粘着性树脂层(30)上的状态下,确认半导体芯片(70)的动作;(C)工序,在工序(B)之后,从粘着性叠层膜(50)剥离耐热性树脂层(10);(D)工序,在工序(C)之后,从粘着性树脂层(30)拾取半导体芯片(70)。
Description
技术领域
本发明涉及半导体装置的制造方法。
背景技术
在半导体装置的制造工序中,在将半导体晶片切割而获得半导体芯片之后,有时进行确认所得的半导体芯片是否正常地动作的工序。
在该半导体芯片的动作确认工序中,例如,在高温或低温下进行半导体芯片的动作确认。通过这样操作,能够加速内部存在发生不良的因素的半导体芯片的劣化,能够使半导体芯片的初始不良提前发生,除去该次品。由此,能够成品率良好地获得可靠性优异的半导体芯片。
作为这样的半导体芯片的动作确认的加速试验的相关技术,可举出例如,专利文献1(日本特开平10-163281号公报)所记载的技术。
专利文献1中记载了一种半导体元件的制造方法,其特征在于,对于形成有多个半导体元件的半导体晶片实施切割,在保持着实施了该切割的半导体元件间的位置关系的状态下,将与检测器连接的接触端子按压在形成于上述半导体元件的电极上来进行电连接,在该连接的状态下,通过检测器来对半导体元件进行利用动作特性试验的检查,从而制造半导体元件。
现有技术文献
专利文献
专利文献1:日本特开平10-163281号公报
发明内容
发明所要解决的课题
根据本发明人的研究,关于专利文献1所记载的那样的以往的半导体装置的制造方法,发现了以下那样的课题。
首先,本发明人认识到在以往的半导体装置的制造方法中,在高温或低温下进行半导体芯片的动作确认时,固定半导体芯片的粘着性膜会变形或熔融。在该情况下,引起粘着性膜上的半导体芯片的位置偏移,之后的半导体芯片的拾取不能很好地进行。
进一步,根据本发明人的研究,明确了:如果为了抑制粘着性膜的变形、熔融而提高粘着性膜的耐热性,则虽然粘着性膜的变形、熔融被抑制而半导体芯片的位置偏移得以改善,但此时粘着性膜的伸缩性、柔软性恶化,半导体芯片的拾取不能很好地进行。
即,以往的半导体装置的制造方法中,在高温或低温下的半导体芯片的动作确认之后的半导体芯片的拾取性方面有改善的余地。
因此,在以往的半导体装置的制造方法中,从良好地进行半导体芯片的拾取的观点出发,如图4所示那样,必须将粘着性膜50A上的半导体芯片70A先拾取至芯片托盘80A等,然后利用机械臂移送半导体芯片70A以配置于检查台90A,进行高温或低温下的半导体芯片的动作确认,然后,再次将半导体芯片70A拾取至芯片托盘80A等,工序变得复杂。
即,本发明人等发现了在以往的半导体装置的制造方法中,从兼顾切割工序至半导体芯片的动作确认工序之间的工序的简化以及半导体芯片的拾取性这样的观点考虑,具有改善的余地。
本发明是鉴于上述情况而提出的,提供在能够简化切割工序至半导体芯片的动作确认工序之间的工序的同时,能够精度良好地拾取半导体芯片的半导体装置的制造方法。
用于解决课题的方法
本发明人等为了达成上述课题而反复进行了深入研究。其结果发现,通过使用依次具有耐热性树脂层、柔软性树脂层和粘着性树脂层的粘着性叠层膜来作为固定半导体芯片的膜,并且,在半导体芯片的拾取工序之前,剥离上述耐热性树脂层,从而能够兼顾切割工序至半导体芯片的动作确认工序之间的工序的简化和半导体芯片的拾取性,由此完成了本发明。
根据本发明,提供以下所示的半导体装置的制造方法。
[1]
一种半导体装置的制造方法,其具备下述工序:
工序(A),准备结构体,所述结构体具备:依次具有耐热性树脂层、柔软性树脂层和粘着性树脂层的粘着性叠层膜,以及粘贴于上述粘着性树脂层上的1或2个以上的半导体芯片;
工序(B),在粘贴于上述粘着性树脂层上的状态下,确认上述半导体芯片的动作;
工序(C),在上述工序(B)之后,将上述耐热性树脂层从上述粘着性叠层膜剥离;
工序(D),在上述工序(C)之后,从上述粘着性树脂层拾取上述半导体芯片。
[2]
根据上述[1]所述的半导体装置的制造方法,
上述工序(B)中,在0℃以下或50℃以上200℃以下的温度环境下,进行上述半导体芯片的动作确认。
[3]
根据上述[1]或[2]所述的半导体装置的制造方法,
在上述工序(D)之前,进一步具备工序(E):对于上述粘着性叠层膜照射放射线,使上述粘着性树脂层交联,从而降低上述粘着性树脂层对上述半导体芯片的粘着力。
[4]
根据上述[1]~[3]中任一项所述的半导体装置的制造方法,
上述工序(D)中,在使上述粘着性树脂层中的粘贴有上述半导体芯片的区域在膜的面内方向上扩张,使相邻的上述半导体芯片间的间隔扩大的状态下,从上述粘着性树脂层拾取上述半导体芯片。
[5]
根据上述[1]~[4]中任一项所述的半导体装置的制造方法,
上述耐热性树脂层的熔点为200℃以上,或上述耐热性树脂层不具有熔点。
[6]
根据上述[1]~[5]中任一项所述的半导体装置的制造方法,
上述柔软性树脂层的熔点为100℃以上250℃以下。
[7]
根据上述[1]~[6]中任一项所述的半导体装置的制造方法,
构成上述耐热性树脂层的耐热性树脂包含选自由聚酰亚胺、聚酰胺和聚酯所组成的组中的一种或两种以上。
[8]
根据上述[1]~[7]中任一项所述的半导体装置的制造方法,
构成上述柔软性树脂层的柔软性树脂包含选自由聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体和聚对苯二甲酸丁二醇酯所组成的组中的一种或两种以上。
[9]
根据上述[1]~[8]中任一项所述的半导体装置的制造方法,
构成上述粘着性树脂层的粘着剂包含选自(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂和苯乙烯系粘着剂中的一种或两种以上。
[10]
根据上述[1]~[9]中任一项所述的半导体装置的制造方法,
上述粘着性叠层膜的全光线透射率为85%以上。
发明的效果
根据本发明,能够提供在能简化切割工序至半导体芯片的动作确认工序之间的工序的同时,能够精度良好地拾取半导体芯片的半导体装置的制造方法。
附图说明
上述目的和其它目的、特征和优点通过以下所述的优选实施方式,及其所附带的以下附图来进一步明确。
图1为表示本发明涉及的半导体装置的制造方法的一例的流程图。
图2为示意性地示出本发明涉及的实施方式的粘着性叠层膜的结构的一例的截面图。
图3为示意性地示出本发明涉及的实施方式的半导体装置的制造方法的一例的截面图。
图4为示意性地示出以往的半导体装置的制造方法的一例的截面图。
具体实施方式
以下,对于本发明的实施方式,使用附图进行说明。另外,全部的附图中,同样的构成要素附上共同的符号,适当省略说明。此外,图为概略图,与实际的尺寸比率并不一致。此外,数值范围的“A~B”只要没有特别说明,就表示A以上B以下。此外,本实施方式中,所谓“(甲基)丙烯酸“,是指丙烯酸、甲基丙烯酸或者丙烯酸和甲基丙烯酸这两者。
图1为表示本发明涉及的半导体装置的制造方法的一例的流程图。图2为示意性地示出本发明涉及的实施方式的粘着性叠层膜50的结构的一例的截面图。图3为示意性地示出本发明涉及的实施方式的半导体装置的制造方法的一例的截面图。
本实施方式涉及的半导体装置的制造方法至少具备以下4个工序。
(A)工序,准备结构体100,所述结构体100具备:依次具有耐热性树脂层10、柔软性树脂层20和粘着性树脂层30的粘着性叠层膜50,以及粘贴于粘着性树脂层30上的1或2个以上的半导体芯片70
(B)工序,在粘贴于粘着性树脂层30上的状态下,确认半导体芯片70的动作
(C)工序,在工序(B)之后,将耐热性树脂层10从粘着性叠层膜50剥离
(D)工序,在工序(C)之后,从粘着性树脂层30拾取半导体芯片70
根据本发明人等的研究,关于以往的半导体装置的制造方法,发现了以下的那样的课题。
首先,本发明人认识到在以往的半导体装置的制造方法中,在高温或低温下进行半导体芯片的动作确认时,固定半导体芯片的粘着性膜变形或熔融。在该情况下,发生粘着性膜上的半导体芯片的位置偏移,之后的半导体芯片的拾取变得不能很好地进行。
进一步,根据本发明人的研究,明确了:如果为了抑制粘着性膜的变形、熔融而提高粘着性膜的耐热性,则虽然粘着性膜的变形、熔融得到抑制而半导体芯片的位置偏移得以改善,但此时粘着性膜的伸缩性、柔软性恶化,半导体芯片的拾取不能很好地进行。
即,以往的半导体装置的制造方法中,在高温或低温下的半导体芯片的动作确认之后的半导体芯片的拾取性方面有改善的余地。
因此,在以往的半导体装置的制造方法中,从良好地进行半导体芯片的拾取的观点出发,如图4所示那样,必须将粘着性膜50A上的半导体芯片70A先拾取至芯片托盘80A等,然后利用机械臂移送半导体芯片70A以配置于检查台90A,进行高温或低温下的半导体芯片的动作确认,然后,再次将半导体芯片70A拾取至芯片托盘80A等,工序变得复杂。
即,本发明人等发现了在以往的半导体装置的制造方法中,从兼顾切割工序至半导体芯片的动作确认工序之间的工序的简化和半导体芯片的拾取性这样的观点考虑,具有改善的余地。
本发明人等为了达成上述课题而反复进行了深入研究。其结果是发现了通过使用依次具有耐热性树脂层10、柔软性树脂层20和粘着性树脂层30的粘着性叠层膜50,并且在半导体芯片70的拾取工序之前剥离耐热性树脂层10,从而能够兼顾切割工序至半导体芯片的动作确认工序之间的工序的简化和半导体芯片的拾取性。
即,通过使用具有耐热性树脂层10的粘着性叠层膜50来进行上述工序(B),从而能够通过耐热性树脂层10来抑制粘着性树脂层30的变形、熔融而抑制半导体芯片70的位置偏移,其结果是可以更准确地进行上述工序(D)中的半导体芯片70的拾取。
此外,通过在上述工序(B)之后进行上述工序(C),从而伸缩性、柔软性差的耐热性树脂层10被除去,因此在上述工序(D)中,具备粘着性树脂层30和柔软性树脂层20的膜的伸缩性、柔软性变得良好,能够更容易地进行上述工序(D)中的半导体芯片70的拾取。
进一步,能够在粘贴于粘着性叠层膜50上的状态下,进行在高温或低温下的半导体芯片70的动作确认,因此不需要在半导体芯片70的动作确认之前从粘着性叠层膜50拾取半导体芯片70并使其移动至芯片托盘等,能够简化切割工序至半导体芯片的动作确认工序之间的工序。
如以上那样,根据本实施方式涉及的半导体装置的制造方法,通过具备上述工序(A)~(D),从而在能够简化切割工序至半导体芯片的动作确认工序之间的工序的同时,能够精度良好地拾取半导体芯片。
1.粘着性叠层膜
首先,对于本实施方式涉及的半导体装置的制造方法所使用的粘着性叠层膜50进行说明。
这里,在本实施方式中,所谓耐热性,是指高温或低温下的膜、树脂层的尺寸稳定性。即,意味着越是耐热性优异的膜、树脂层,则高温或低温下的膨胀、收缩,软化等变形、熔融等越难以发生。
<耐热性树脂层>
耐热性树脂层10是以使粘着性叠层膜50的操作性、机械特性、耐热性等特性变得更良好为目的而设置的层。
耐热性树脂层10只要是具有在高温或低温下进行半导体芯片的动作确认时不引起发生半导体芯片的位置偏移那样的的变形、熔融的程度的耐热性,就不受特别限定,例如,可以使用耐热性树脂膜。
作为构成上述耐热性树脂膜的树脂,可举出例如,选自聚对苯二甲酸乙二醇酯、聚对苯二甲酸丁二醇酯、聚萘二甲酸乙二醇酯等聚酯;尼龙-6、尼龙-66、聚己二酰间苯二甲胺等聚酰胺;聚酰亚胺;聚醚酰亚胺;聚酰胺酰亚胺;聚碳酸酯;改性聚苯醚;聚缩醛;聚芳酯;聚砜;聚醚砜;聚苯硫醚;聚醚醚酮;氟系树脂;液晶聚合物;1,1-二氯乙烯树脂;聚苯并咪唑;聚苯并唑;聚甲基戊烯等中的一种或两种以上。
其中,从耐热性、机械强度、透明性、价格等的平衡优异的观点出发,优选为选自聚酰亚胺、聚酰胺和聚酯中的一种或两种以上。
耐热性树脂层10的熔点优选为200℃以上,更优选为220℃以上。或者优选耐热性树脂层10不显示熔点,分解温度更优选为200℃以上,分解温度进一步优选为220℃以上。
如果使用这样的耐热性树脂层10,则能够进一步抑制高温或低温下的动作确认试验时的粘着性叠层膜50的变形。
耐热性树脂层10可以是单层,也可以是两种以上的层。
此外,作为用于形成耐热性树脂层10的树脂膜的形态,可以是拉伸膜,也可以是在单轴方向或双轴方向上拉伸了的膜,但从提高耐热性树脂层10的耐热性和机械强度的观点出发,优选为在单轴方向或双轴方向上拉伸了的膜。
从获得良好的膜特性的观点出发,耐热性树脂层10的厚度优选为10μm以上1000μm以下,更优选为10μm以上500μm以下,进一步优选为20μm以上300μm以下。
为了改良耐热性树脂层10与其它层的粘接性,还可以进行表面处理。具体而言,可以进行电晕处理、等离子体处理、底涂(undercoat)处理、底漆涂布(primer coating)处理等。
耐热性树脂层10以对于柔软性树脂层20能够剥离的方式被叠层。
能够剥离地叠层的方法不受特别限定,可举出例如,介由能够剥离的粘接层(未图示)来叠层的方法;调整耐热性树脂层10的与柔软性树脂层20接触侧的表面的表面粗糙度,并且将该表面进行脱模处理的方法等。所谓能够剥离的粘接层,是指通过在剥离时施加放射线、热等某种刺激从而能够容易地剥离的层。
作为这样的能够剥离的粘接层,可举出例如,(1)由通过放射线照射能够抑制粘着力高涨的放射线交联型粘着剂来构成的粘接层,(2)由通过加热而膨胀并能够抑制粘着力高涨的加热膨胀型粘着剂来构成的粘接层,(3)由通过加热而收缩并能够抑制粘着力高涨,且将收缩性膜作为基材的两面粘着性膜来构成的粘接层,(4)高温或低温下的处理后也能够抑制粘着力高涨的耐热性粘接层等。
((1)由通过放射线照射能够抑制粘着力高涨的放射线交联型粘着剂来构成的粘接层)
放射线交联型粘着剂在放射线照射前对耐热性树脂层10和柔软性树脂层20具有充分的粘接力,放射线照射后能够抑制粘着力的高涨。即,放射线照射前能够粘接耐热性树脂层10和柔软性树脂层20,放射线照射后能够从柔软性树脂层20容易地剥离耐热性树脂层10。
作为放射线交联型粘着剂,一般而言,可以使用公知的紫外线交联型粘着剂等放射线交联型粘着剂。
((2)由通过加热而膨胀并能够抑制粘着力高涨的加热膨胀型粘着剂来构成的粘接层)
加热膨胀型粘着剂是指在粘着剂中分散有热膨胀性微粒、发泡剂等的粘着剂。作为粘着剂,一般而言可以使用公知的粘着剂,可举出例如,(甲基)丙烯酸系粘着剂、有机硅系粘着剂、橡胶系粘着剂、聚氨酯系粘着剂、聚乙烯基醚系粘着剂等。
作为热膨胀性微粒,可举出例如,使异丁烷、丙烷、戊烷等通过加热而容易气化并膨胀的物质内包于具有弹性的壳内的微粒。
作为发泡剂,可举出例如,具有进行热分解而产生水、二氧化碳、氮气的能力的化学物质等。
如果热膨胀性微粒、发泡剂通过加热而膨胀,则粘接层的表面状态发生变化,能够抑制柔软性树脂层20与耐热性树脂层10的粘着力的高涨,其结果是能够将耐热性树脂层10从柔软性树脂层20容易地剥离。
((3)由通过加热而收缩并能够抑制粘着力高涨,且将收缩性膜作为基材的两面粘着性膜来构成的粘接层)
作为将收缩性膜作为基材的两面粘着性膜所使用的收缩膜,可举出通过加热而收缩的热收缩膜。可举出例如,聚对苯二甲酸乙二醇酯、聚乙烯、聚苯乙烯、聚丙烯、聚酰胺、聚氨酯、聚氯乙烯、聚1,1-二氯乙烯等单轴或双轴拉伸膜等。
作为设置于收缩性膜的两面的粘着剂,一般而言可以使用公知的粘着剂,可举出例如,(甲基)丙烯酸系粘着剂、有机硅系粘着剂、橡胶系粘着剂、聚氨酯系粘着剂、聚乙烯基醚系粘着剂等。
如果通过加热而基材的收缩性膜收缩,则粘接层的表面状态发生变化,能够抑制柔软性树脂层20与耐热性树脂层10的粘着力的高涨,其结果是能够将耐热性树脂层10从柔软性树脂层20容易地剥离。
((4)高温或低温下的处理后也能够抑制粘着力高涨的耐热性粘接层)
构成高温或低温下的处理后也能够抑制粘着力高涨的耐热性粘接层的粘着剂,可举出(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂、苯乙烯系粘着剂等。
这里,(甲基)丙烯酸系粘着剂包含(甲基)丙烯酸系粘着性树脂作为必须成分。有机硅系粘着剂包含有机硅系粘着性树脂作为必须成分。氨基甲酸酯系粘着剂包含氨基甲酸酯系粘着性树脂作为必须成分。
其中,从使耐热性树脂层10与柔软性树脂层20之间的剥离强度的调整变得更容易的观点等出发,优选为(甲基)丙烯酸系粘着剂。
作为(甲基)丙烯酸系粘着剂所使用的(甲基)丙烯酸系粘着性树脂,可举出例如,包含(甲基)丙烯酸烷基酯单体单元(A)和具有能与交联剂发生反应的官能团的单体单元(B)的共聚物。
本实施方式中,所谓(甲基)丙烯酸烷基酯,是指丙烯酸烷基酯、甲基丙烯酸烷基酯或它们的混合物。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂例如能够通过将包含(甲基)丙烯酸烷基酯单体(A)和具有能与交联剂发生反应的官能团的单体(B)的单体混合物进行共聚来获得。
作为形成(甲基)丙烯酸烷基酯单体单元(A)的单体(A),可举出具有碳原子数1~12左右的烷基的(甲基)丙烯酸烷基酯。优选为具有碳原子数1~8的烷基的(甲基)丙烯酸烷基酯。具体而言,可举出丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸-2-乙基己酯、甲基丙烯酸-2-乙基己酯等。它们可以单独使用,也可以使用2种以上。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂中,在将(甲基)丙烯酸系粘着性树脂中的全部单体单元的合计设为100质量%时,(甲基)丙烯酸烷基酯单体单元(A)的含量优选为10质量%以上98.9质量%以下,更优选为85质量%以上95质量%以下。
作为形成具有能与交联剂发生反应的官能团的单体(B)的单体(B),可举出丙烯酸、甲基丙烯酸、衣康酸、中康酸、柠康酸、富马酸、马来酸、衣康酸单烷基酯、中康酸单烷基酯、柠康酸单烷基酯、富马酸单烷基酯、马来酸单烷基酯、丙烯酸缩水甘油酯、甲基丙烯酸缩水甘油酯、丙烯酸-2-羟基乙酯、甲基丙烯酸-2-羟基乙酯、丙烯酰胺、甲基丙烯酰胺、丙烯酸叔丁基氨基乙酯、甲基丙烯酸叔丁基氨基乙酯等。优选为丙烯酸、甲基丙烯酸、丙烯酸-2-羟基乙酯、甲基丙烯酸-2-羟基乙酯、丙烯酰胺、甲基丙烯酰胺等。它们可以单独使用,也可以使用2种以上。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂中,在将(甲基)丙烯酸系粘着性树脂中的全部单体单元的合计设为100质量%时,单体单元(B)的含量优选为1质量%以上40质量%以下,更优选为1质量%以上20质量%以下,进一步优选为1质量%以上10质量%以下。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂中,除了单体单元(A)和单体单元(B)以外,还可以进一步包含2官能性单体(C)、具有作为表面活性剂的性质的特定的共聚单体(以下,称为聚合性表面活性剂)单元。
聚合性表面活性剂在具有与单体(A)、单体(B)和单体(C)共聚的性质的同时,在乳液聚合的情况下具有作为乳化剂的作用。
作为形成2官能性单体单元(C)的单体(C),可举出甲基丙烯酸烯丙酯、丙烯酸烯丙酯、二乙烯基苯、甲基丙烯酸乙烯酯、丙烯酸乙烯酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯;例如,两末端为二丙烯酸酯或二甲基丙烯酸酯且主链的结构为丙二醇型(例如,日本油脂(株)制,商品名;PDP-200、同PDP-400、同ADP-200、同ADP-400)、1,4-丁二醇型(例如,日本油脂(株)制,商品名;ADT-250、同ADT-850)和它们的混合型(例如,日本油脂(株)制,商品名:ADET-1800、同ADPT-4000)的单体等。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂中,在将(甲基)丙烯酸系粘着性树脂中的全部单体单元的合计设为100质量%时,单体单元(C)的含量优选为0.1质量%以上30质量%以下,更优选为0.1质量%以上5质量%以下。
作为聚合性表面活性剂的例子,可举出例如,聚氧乙烯壬基苯基醚的苯环上导入有聚合性的1-丙烯基的聚合性表面活性剂(第一工业制药(株)制;商品名:阿克隆(アクアロン)RN-10、阿克隆RN-20、阿克隆RN-30、阿克隆RN-50等)、聚氧乙烯壬基苯基醚的硫酸酯的铵盐的苯环上导入有聚合性的1-丙烯基的聚合性表面活性剂(第一工业制药(株)制;商品名:阿克隆HS-10、阿克隆HS-20、阿克隆HS-1025等)、以及分子内具有聚合性双键的磺基琥珀酸二酯系(花王(株)制;商品名:LATEMUL S-120A、LATEMUL S-180A等)等。
本实施方式涉及的(甲基)丙烯酸系粘着性树脂可以根据需要进一步含有由乙酸乙烯酯、丙烯腈、苯乙烯等具有聚合性双键的单体来形成的单体单元。
作为本实施方式涉及的(甲基)丙烯酸系粘着性树脂的聚合反应机理,可举出自由基聚合、阴离子聚合、阳离子聚合等。如果考虑(甲基)丙烯酸系粘着性树脂的制造成本、单体的官能团的影响等,则优选通过自由基聚合进行聚合。
在通过自由基聚合反应进行聚合时,作为自由基聚合引发剂,可举出过氧化苯甲酰、二叔丁基过氧化物、二枯基过氧化物、3,3,5-三甲基己酰过氧化物、二-2-乙基己基过氧化二碳酸酯、甲基乙基酮过氧化物、叔丁基过氧化邻苯二甲酸酯、叔丁基过氧化苯甲酸酯、二叔丁基过氧化乙酸酯、叔丁基过氧化异丁酸酯、叔丁基过氧化-2-己酸酯、叔丁基过氧化-2-乙基己酸酯、叔丁基过氧化-3,5,5-三甲基己酸酯、过氧化乙酰、过氧化异丁酰、过氧化辛酰、叔丁基过氧化物、二叔戊基过氧化物等有机过氧化物;过硫酸铵、过硫酸钾、过硫酸钠等无机过氧化物;2,2’-偶氮二异丁腈、2,2’-偶氮二-2-甲基丁腈、4,4’-偶氮二-4-氰基戊酸等偶氮化合物。
在通过乳液聚合法进行聚合的情况下,在这些自由基聚合引发剂中,优选为水溶性的过硫酸铵、过硫酸钾、过硫酸钠等无机过氧化物,以及水溶性的4,4’-偶氮二-4-氰基戊酸等分子内具有羧基的偶氮化合物,进一步优选为过硫酸铵、4,4’-偶氮二-4-氰基戊酸等分子内具有羧基的偶氮化合物,特别优选为4,4’-偶氮二-4-氰基戊酸等分子内具有羧基的偶氮化合物。
(甲基)丙烯酸系粘着剂中除了(甲基)丙烯酸系粘着性树脂以外,优选进一步包含1分子中具有2个以上交联性官能团的交联剂。
1分子中具有2个以上交联性官能团的交联剂用于与(甲基)丙烯酸系粘着性树脂所具有的官能团发生反应,调整粘着力和凝集力。
作为这样的交联剂,可举出山梨糖醇聚缩水甘油基醚、聚甘油聚缩水甘油基醚、季戊四醇聚缩水甘油基醚、二甘油聚缩水甘油基醚、甘油聚缩水甘油基醚、新戊二醇二缩水甘油基醚、间苯二酚二缩水甘油基醚等环氧系化合物;四亚甲基二异氰酸酯、六亚甲基二异氰酸酯、三羟甲基丙烷的甲苯二异氰酸酯3加成物、多异氰酸酯、二苯基甲烷二异氰酸酯、甲苯二异氰酸酯等异氰酸酯系化合物;三羟甲基丙烷-三-β-吖丙啶基丙酸酯、四羟甲基甲烷-三-β-吖丙啶基丙酸酯、N,N’-二苯基甲烷-4,4’-双(1-氮丙啶甲酰胺)、N,N’-六亚甲基-1,6-双(1-氮丙啶甲酰胺)、N,N’-甲苯-2,4-双(1-氮丙啶甲酰胺)、三羟甲基丙烷-三-β-(2-甲基氮丙啶)丙酸酯等氮丙啶系化合物;N,N,N’,N’-四缩水甘油基-间苯二甲胺、1,3-双(N,N’-二缩水甘油基氨基甲基)环己烷等4官能性环氧系化合物;六甲氧基羟甲基三聚氰胺等三聚氰胺系化合物等。它们可以单独使用,也可以并用2种以上。
其中,优选包含选自环氧系化合物、异氰酸酯系化合物和氮丙啶系化合物中的一种或两种以上。
从提高与粘接层的耐热性、密合力的平衡的观点出发,(甲基)丙烯酸系粘着剂中的交联剂的含量相对于(甲基)丙烯酸系粘着性树脂100质量份,优选为10质量份以上50质量份以下,更优选为12质量份以上30质量份以下。
此外,通过调整(甲基)丙烯酸系粘着剂中的交联剂的含量,从而能够调整耐热性树脂层10与柔软性树脂层20之间的剥离强度。
本实施方式涉及的(甲基)丙烯酸系粘着剂除了粘着性树脂以外,还可以进一步包含紫外线聚合引发剂。由此,能够减少利用紫外线照射的固化时间以及紫外线照射量。
紫外线聚合引发剂的例子可举出甲氧基苯乙酮等苯乙酮系光聚合引发剂;4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮等α-酮醇化合物;苯偶酰二甲基缩酮等缩酮系化合物;苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻异丙基醚等苯偶姻系光聚合引发剂;二苯甲酮、苯甲酰苯甲酸等二苯甲酮系光聚合引发剂等。
粘着剂中的紫外线聚合引发剂的含量相对于粘着性树脂100质量份,优选为0.1质量份以上10质量份以下,更优选为2.5质量份以上5质量份以下。
能够剥离的粘接层的厚度不受特别限制,例如,优选为1μm以上100μm以下,更优选为3μm以上50μm以下。
能够剥离的粘接层例如,可以通过在耐热性树脂层10或柔软性树脂层20上涂布粘着剂涂布液来形成。
作为涂布粘着剂涂布液的方法,可以采用以往公知的涂布方法,例如,辊涂法、逆转辊涂布法、凹版辊法、棒涂法、缺角轮涂布法、模涂法等。所涂布的粘着剂的干燥条件不受特别限制,一般而言,优选在80~200℃的温度范围内,干燥10秒~10分钟。进一步优选在80~170℃干燥15秒~5分钟。为了充分地促进交联剂与粘着剂的交联反应,可以在粘着剂涂布液的干燥结束之后,在40~80℃加热5~300小时左右。
此外,在本实施方式涉及的粘着性叠层膜50中,通过调整耐热性树脂层10的与柔软性树脂层20接触侧的表面的表面粗糙度,并且将其表面进行脱模处理,从而也能够调整耐热性树脂层10与柔软性树脂层20之间的剥离强度。
这里,JIS-B0601所规定的、耐热性树脂层10的与柔软性树脂层20接触侧的表面的表面粗糙度(Ra)优选为0.10μm以上10μm以下。
此外,优选耐热性树脂层10的与柔软性树脂层20接触侧的表面用有机硅、聚四氟乙烯等脱模剂进行了脱模处理。
(柔软性树脂层)
柔软性树脂层20是以使粘着性叠层膜50的柔软性、伸缩性等特性变得良好为目的而设置的层。
通过设置柔软性树脂层20,从而剥离耐热性树脂层10之后的粘着性叠层膜50的伸缩性、柔软性提高,在拾取半导体芯片70的工序(D)中能够使粘着性叠层膜50在面内方向上扩张。
通过这样操作,相邻的半导体芯片70间的间隔扩大,因此变得易于从粘着性叠层膜50拾取半导体芯片70。进一步,由于由粘着性叠层膜50的面内方向的扩张而产生的、半导体芯片70与粘着性树脂层30的剪切应力,使得半导体芯片70与粘着性树脂层30的粘着力降低,因此变得易于从粘着性叠层膜50拾取半导体芯片70。
柔软性树脂层20只要能够在面内方向上扩张,就不受特别限定,优选为柔软性、伸缩性等特性优异并且具有在高温或低温下进行半导体芯片的动作确认时能够维持耐热性树脂层10与粘着性树脂层30的粘接性的程度的耐热性的柔软性树脂层20。
作为构成上述柔软性树脂层20的柔软性树脂,可举出例如,选自聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体和聚对苯二甲酸丁二醇酯等中的一种或两种以上。
按照JISK7161,在样品宽度10mm、夹盘间距离30mm、拉伸速度300mm/分钟的条件下测定得到的、柔软性树脂层20在160℃的抗拉弹性模量(E’)优选为1MPa以上300MPa以下,更优选为5MPa以上150MPa以下。由此,能够在良好地保持柔软性树脂层20的柔软性、伸缩性等特性的同时,进一步抑制高温或低温下进行半导体芯片70的动作确认工序时的粘着性叠层膜50的热膨胀。
柔软性树脂层20的熔点优选为100℃以上250℃以下。
如果使用这样的柔软性树脂层20,则能够进一步抑制高温或低温下的动作确认试验时的粘着性叠层膜50的变形。
柔软性树脂层20的厚度不受特别限制,例如,优选为10μm以上500μm以下,更优选为20μm以上300μm以下,进一步优选为30μm以上250μm以下,特别优选为50μm以上200μm以下。
<粘着性树脂层>
粘着性树脂层30是设置于柔软性树脂层20的一面侧的层,是将粘着性叠层膜50粘贴于半导体基板时与半导体基板的表面接触并粘着的层。
构成粘着性树脂层30的粘着剂可举出(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂、苯乙烯系粘着剂等。其中,从能够容易地调整粘接力的方面等出发,优选为将(甲基)丙烯酸系聚合物作为基础聚合物的(甲基)丙烯酸系粘着剂。
作为构成粘着性树脂层30的粘着剂,可以使用通过放射线使粘着力降低的放射线交联型粘着剂。由放射线交联型粘着剂构成的粘着性树脂层30通过放射线的照射而交联,粘着力显著地降低,因此在半导体芯片70的拾取工序中,变得易于从粘着性树脂层30拾取半导体芯片70。作为放射线,可举出紫外线、电子射线、红外线等。
作为放射线交联型粘着剂,优选为紫外线交联型粘着剂。
作为(甲基)丙烯酸系粘着剂所包含的(甲基)丙烯酸系聚合物,可举出例如,(甲基)丙烯酸酯化合物的均聚物、(甲基)丙烯酸酯化合物与共聚单体的共聚物等。作为(甲基)丙烯酸酯化合物,可举出例如,(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸羟基乙酯、(甲基)丙烯酸羟基丙酯、(甲基)丙烯酸二甲基氨基乙酯、(甲基)丙烯酸缩水甘油酯等。这些(甲基)丙烯酸酯化合物可以单独使用一种,也可以将两种以上并用来使用。
此外,作为构成(甲基)丙烯酸系共聚物的共聚单体,可举出例如,乙酸乙烯酯、(甲基)丙烯腈、苯乙烯、(甲基)丙烯酸、衣康酸、(甲基)丙烯酰胺、羟甲基(甲基)丙烯酰胺、马来酸酐等。这些共聚单体可以单独使用一种,也可以将两种以上并用来使用。
放射线交联型粘着剂包含例如,上述(甲基)丙烯酸系粘着剂等粘着剂、交联性化合物(具有碳-碳双键的成分)、以及光聚合引发剂或热聚合引发剂。
作为交联性化合物,可举出例如,分子中具有碳-碳双键,通过自由基聚合能够交联的单体、低聚物或聚合物等。作为这样的交联性化合物,可举出例如,三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等(甲基)丙烯酸与多元醇的酯;酯(甲基)丙烯酸酯低聚物;2-丙烯基二-3-丁烯基氰脲酸酯、2-羟基乙基双(2-(甲基)丙烯酰氧基乙基)异氰脲酸酯、三(2-甲基丙烯酰氧基乙基)异氰脲酸酯等异氰脲酸酯或异氰脲酸酯化合物等。
另外,在粘着剂为在聚合物的侧链具有碳-碳双键的放射线交联型聚合物的情况下,可以不添加交联性化合物。
相对于粘着剂100质量份,交联性化合物的含量优选为5~900质量份,更优选为5~100质量份,进一步优选为10~50质量份。通过使交联性化合物的含量为上述范围,与比上述范围少的情况相比,变得易于调整粘着力,与比上述范围多的情况相比,难以发生由对于热、光的灵敏度过高而导致的保存稳定性的降低。
作为光聚合引发剂,只要是通过照射放射线而发生开裂并生成自由基的化合物即可,可举出例如,苯偶姻甲基醚、苯偶姻异丙基醚、苯偶姻异丁基醚等苯偶姻烷基醚类;苯偶酰、苯偶姻、二苯甲酮、α-羟基环己基苯基酮等芳香族酮类;苯偶酰二甲基缩酮等芳香族缩酮类;聚乙烯基二苯甲酮;氯噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮等噻吨酮类等。
作为热聚合引发剂,可举出例如,有机过氧化物衍生物、偶氮系聚合引发剂等。从加热时不产生氮气方面出发,优选为有机过氧化物衍生物。作为热聚合引发剂,可举出例如,酮过氧化物、过氧缩酮、氢过氧化物、二烷基过氧化物、二酰基过氧化物、过氧化酯和过氧化二碳酸酯等。
可以在粘着剂中添加交联剂。作为交联剂,可举出例如,山梨糖醇聚缩水甘油基醚、聚甘油聚缩水甘油基醚、季戊四醇聚缩水甘油基醚、二甘油聚缩水甘油基醚等环氧系化合物;四羟甲基甲烷-三-β-吖丙啶基丙酸酯、三羟甲基丙烷-三-β-吖丙啶基丙酸酯、N,N’-二苯基甲烷-4,4’-双(1-氮丙啶甲酰胺)、N,N’-六亚甲基-1,6-双(1-氮丙啶甲酰胺)等氮丙啶系化合物;四亚甲基二异氰酸酯、六亚甲基二异氰酸酯、多异氰酸酯等异氰酸酯系化合物等。
从提高与粘着性树脂层30的耐热性、密合力的平衡的观点出发,相对于(甲基)丙烯酸系聚合物100质量份,交联剂的含量优选为0.1质量份以上10质量份以下。
粘着性树脂层30的厚度不受特别限制,例如,优选为1μm以上100μm以下,更优选为3μm以上50μm以下。
粘着性树脂层30例如,可以通过在柔软性树脂层20上涂布粘着剂涂布液来形成。
作为涂布粘着剂涂布液的方法,可以采用以往公知的涂布方法,例如,辊涂法、逆转辊涂布法、凹版辊法、棒涂法、缺角轮涂布法、模涂法等。所涂布的粘着剂的干燥条件不受特别限制,一般而言,优选在80~200℃的温度范围内,干燥10秒~10分钟。进一步优选在80~170℃干燥15秒~5分钟。为了充分地促进交联剂与粘着剂的交联反应,可以在粘着剂涂布液的干燥结束之后,在40~80℃加热5~300小时左右。
本实施方式涉及的粘着性叠层膜50也可以在粘着性树脂层30上进一步叠层脱模膜。作为脱模膜,可举出例如,实施了脱模处理的聚酯膜等。
本实施方式涉及的粘着性叠层膜50的全光线透射率优选为85%以上,更优选为90%以上。通过这样操作,从而能够对粘着性叠层膜50赋予透明性。而且,通过使粘着性叠层膜50的全光线透射率为上述下限值以上,从而对本实施方式涉及的粘着性叠层膜50从耐热性树脂层10侧照射放射线时,能够更有效地对粘着性树脂层30照射放射线,能够提高放射线照射效率。另外,粘着性叠层膜50的全光线透射率能够按照JIS K7105(1981)进行测定。
接下来,对于本实施方式涉及的粘着性叠层膜50的制造方法的一例进行说明。
首先,在耐热性树脂层10的一面通过挤出层压法来形成柔软性树脂层20。接着,通过在柔软性树脂层20上涂布粘着剂涂布液使其干燥,从而形成粘着性树脂层30,获得粘着性叠层膜50。
此外,耐热性树脂层10与柔软性树脂层20可以通过共挤出成型来形成,也可以将膜状的耐热性树脂层10与膜状的柔软性树脂层20进行层压(叠层)来形成。
2.半导体装置的制造方法
接下来,对于本实施方式涉及的半导体装置的制造方法的各工序进行说明。
(工序(A))
首先,准备结构体100,所述结构体100具备:依次具有耐热性树脂层10、柔软性树脂层20和粘着性树脂层30的粘着性叠层膜50,以及粘贴于粘着性树脂层30上的1或2个以上的半导体芯片70。
这样的结构体例如,能够通过在粘着性叠层膜50的粘着性树脂层30上粘贴半导体基板,接着,将粘着性叠层膜50上的半导体基板切割成半导体芯片70来制作。
以下,对于结构体100的制造方法进行说明。
首先,在粘着性叠层膜50的粘着性树脂层30上粘贴半导体基板。
作为粘贴于粘着性叠层膜50的半导体基板,可举出例如,硅、锗、镓-砷、镓-磷、镓-砷-铝等的基板(例如,晶片)。
此外,作为半导体基板,优选使用表面形成有电路的半导体基板。
粘着性叠层膜50的粘贴也可以通过手工来进行,但通常通过安装有卷状的表面保护膜的自动粘贴机来进行。
粘着性叠层膜50与半导体基板粘贴时的温度不受特别限制,优选为25℃~80℃。
此外,对于粘着性叠层膜50与半导体基板粘贴时的压力,不受特别限制,优选为0.3MPa~0.5MPa。
接着,将粘着性叠层膜50上的半导体基板切割成半导体芯片70。
这里所谓“切割”,包括:
(a)通过对于半导体基板设置与该半导体基板的厚度相同深度的刻痕,从而将半导体基板分割,获得多个被分割了的半导体芯片的操作(以下,也称为“全切割”),以及,
(b)通过照射激光,从而对于半导体基板,设置不至于切断半导体基板的改性区域,获得多个半导体芯片的操作(以下,也称为“隐形切割”)。
上述切割能够使用切割刀(切割锯)、激光等来进行。
在切割为全切割的情况下,通过切割而将半导体基板分割成多个半导体芯片。
另一方面,在切割为隐形切割的情况下,仅通过切割不至于将半导体基板分割成多个半导体芯片,而通过切割后的粘着性叠层膜50的扩张,使半导体基板分割而获得多个被分割了的半导体芯片。另外,隐形切割时的粘着性叠层膜50的扩张可以在工序(B)之前进行,也可以在工序(B)之后进行。
另外,工序(A)中的半导体芯片70包含:通过全切割而获得的被分割了的多个半导体芯片,以及通过隐形切割而获得的被分割之前的多个半导体芯片这两者。
(工序(B))
接下来,在粘贴于粘着性树脂层30上的状态下,确认半导体芯片70的动作。
半导体芯片70的动作确认例如,可以如图3所示那样,将结构体100载置于检查台90,使用公知的半导体试验装置来进行。
例如,使连接于检测器的接触端子95与半导体芯片70的电极75接触。由此,在半导体芯片70与检测器之间,进行动作电力、动作试验信号等的授受,判别半导体芯片70的动作特性的好坏等。
工序(B)中,优选在0℃以下或50℃以上200℃以下的温度环境下进行半导体芯片70的动作确认,更优选在60℃以上180℃以下的温度环境下进行半导体芯片70的动作确认,进一步优选在80℃以上160℃以下的温度环境下进行半导体芯片70的动作确认。通过这样操作,从而能够加速内部存在发生不良的因素的半导体芯片的劣化,能够使半导体芯片的初始不良提前发生,除去该次品。由此,能够成品率良好地获得可靠性优异的半导体芯片70。
例如,通过将结构体100放入恒温槽、烘箱,或者利用设置于检查台90的加热器进行加热,从而能够使其处于上述温度环境下。
(工序(C))
接着,在工序(B)之后,将耐热性树脂层10从粘着性叠层膜50进行剥离。
粘着性叠层膜50的剥离有时也通过手工来进行,一般而言,可以通过被称为自动剥离机的装置来进行。
(工序(D))
接着,在工序(C)之后,从粘着性树脂层30拾取半导体芯片70。
通过该拾取,能够从粘着性叠层膜50剥离半导体芯片70。
半导体芯片70的拾取可以利用公知的方法来进行。
在工序(D)中,优选在使粘着性树脂层30中的粘贴有半导体芯片70的区域在膜的面内方向上扩张,使相邻的半导体芯片70间的间隔扩大的状态下,从粘着性树脂层30拾取半导体芯片70。
通过这样操作,相邻的半导体芯片70间的间隔扩大,因此变得易于从粘着性叠层膜50拾取半导体芯片70。进一步,由于因粘着性叠层膜50的面内方向的扩张而产生的、半导体芯片70与粘着性树脂层30的剪切应力,使得半导体芯片70与粘着性树脂层30的粘着力降低,因此变得易于从粘着性叠层膜50拾取半导体芯片70。
(工序(E))
本实施方式涉及的半导体装置的制造方法中,优选在工序(D)之前,进一步具备工序(E):对于粘着性叠层膜50照射放射线,使粘着性树脂层30交联,从而使粘着性树脂层30对半导体芯片70的粘着力降低。
通过进行工序(E),能够从粘着性树脂层30容易地拾取半导体芯片70。此外,能够抑制半导体芯片70的表面被构成粘着性树脂层30的粘着成分污染。
放射线例如,从粘着性叠层膜50的耐热性树脂层10侧照射。
在使用紫外线作为放射线的情况下,对于粘着性叠层膜50照射的紫外线的剂量优选为100mJ/cm2以上,更优选为350mJ/cm2以上。
如果紫外线的剂量为上述下限值以上,则能够充分地降低粘着性树脂层30的粘着力,其结果是能够进一步抑制在半导体芯片表面产生残胶。
此外,对于粘着性叠层膜50照射的紫外线的剂量的上限不受特别限定,从生产率的观点出发,例如,为1500mJ/cm2以下,优选为1200mJ/cm2以下。
紫外线照射可以使用例如高压水银灯、LED来进行。
工序(E)可以在工序(C)之前进行,也可以在工序(C)之后进行,优选在工序(B)与工序(C)之间或工序(C)与工序(D)之间进行。
(其它工序)
本实施方式涉及的半导体装置的制造方法可以具有上述以外的其它工序。作为其它工序,可以使用半导体装置的制造方法中的公知的工序。
例如,在进行工序(D)之后,也可以进一步进行将获得的半导体芯片安装于电路基板的工序;引线接合工序、密封工序等电子部件的制造工序中一般所进行的任意的工序等。
此外,在作为半导体基板,使用仅一面上具有电路面的半导体基板的情况下,可以进一步具有将半导体基板的电路面进行密封的密封工序。
密封工序中,例如,通过在贴着有粘着性叠层膜50的半导体基板的电路面上形成保护层,从而将电路面密封于内部。在该情况下,通过密封工序之后的切割工序来切割电路面被密封的半导体基板。
另外,密封工序也可以在将粘着性叠层膜50粘贴在半导体基板上的工序之前进行。
此外,在使用具有电路面的半导体基板的情况下,例如,可以进一步具有在半导体基板的电路形成面上利用通常所使用的方法进行电极形成和在非电路面上进行保护膜形成的工序。设置有进行该电极形成和保护膜形成的工序的制造方法也被称为WLP(WaferLevel Package,晶片级封装)。
此外,也可以进一步具有在半导体基板的电路面上形成再配线层的工序。通过在超过半导体芯片面积的宽的区域形成再配线层而获得的半导体装置也被称为扇出封装(Fan-out Package)。
以上,对于本发明的实施方式进行了描述,但它们是本发明的例示,还可以采用上述以外的各种构成。
另外,本发明不限定于上述实施方式,可以达成本发明的目的的范围内的变形、改良等包含在本发明中。
本申请主张以2016年3月30日申请的日本申请特愿2016-068854号作为基础的优先权,将其公开的全部内容并入本申请中。
Claims (10)
1.一种半导体装置的制造方法,其具备下述工序:
工序(A),准备结构体,所述结构体具备:依次具有耐热性树脂层、柔软性树脂层和粘着性树脂层的粘着性叠层膜,以及粘贴于所述粘着性树脂层上的1或2个以上的半导体芯片;
工序(B),在粘贴于所述粘着性树脂层上的状态下,确认所述半导体芯片的动作;
工序(C),在所述工序(B)之后,将所述耐热性树脂层从所述粘着性叠层膜剥离;
工序(D),在所述工序(C)之后,从所述粘着性树脂层拾取所述半导体芯片。
2.根据权利要求1所述的半导体装置的制造方法,
所述工序(B)中,在0℃以下或50℃以上200℃以下的温度环境下,进行所述半导体芯片的动作确认。
3.根据权利要求1或2所述的半导体装置的制造方法,
在所述工序(D)之前,进一步具备工序(E):对于所述粘着性叠层膜照射放射线,使所述粘着性树脂层交联,从而降低所述粘着性树脂层对所述半导体芯片的粘着力。
4.根据权利要求1~3中任一项所述的半导体装置的制造方法,
所述工序(D)中,在使所述粘着性树脂层中的粘贴有所述半导体芯片的区域在膜的面内方向上扩张,使相邻的所述半导体芯片间的间隔扩大的状态下,从所述粘着性树脂层拾取所述半导体芯片。
5.根据权利要求1~4中任一项所述的半导体装置的制造方法,
所述耐热性树脂层的熔点为200℃以上,或者所述耐热性树脂层不具有熔点。
6.根据权利要求1~5中任一项所述的半导体装置的制造方法,
所述柔软性树脂层的熔点为100℃以上250℃以下。
7.根据权利要求1~6中任一项所述的半导体装置的制造方法,
构成所述耐热性树脂层的耐热性树脂包含选自由聚酰亚胺、聚酰胺和聚酯所组成的组中的一种或两种以上。
8.根据权利要求1~7中任一项所述的半导体装置的制造方法,
构成所述柔软性树脂层的柔软性树脂包含选自由聚酯系弹性体、聚酰胺系弹性体、聚酰亚胺系弹性体和聚对苯二甲酸丁二醇酯所组成的组中的一种或两种以上。
9.根据权利要求1~8中任一项所述的半导体装置的制造方法,
构成所述粘着性树脂层的粘着剂包含选自(甲基)丙烯酸系粘着剂、有机硅系粘着剂、氨基甲酸酯系粘着剂、烯烃系粘着剂和苯乙烯系粘着剂中的一种或两种以上。
10.根据权利要求1~9中任一项所述的半导体装置的制造方法,
所述粘着性叠层膜的全光线透射率为85%以上。
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