CN109056075A - 一种光学晶体的退火装置及退火方法 - Google Patents
一种光学晶体的退火装置及退火方法 Download PDFInfo
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- CN109056075A CN109056075A CN201811096847.9A CN201811096847A CN109056075A CN 109056075 A CN109056075 A CN 109056075A CN 201811096847 A CN201811096847 A CN 201811096847A CN 109056075 A CN109056075 A CN 109056075A
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- Prior art keywords
- heater
- crucible
- annealing
- optical crystal
- annealing device
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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Priority Applications (1)
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CN201811096847.9A CN109056075B (zh) | 2018-09-20 | 2018-09-20 | 一种光学晶体的退火装置及退火方法 |
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CN201811096847.9A CN109056075B (zh) | 2018-09-20 | 2018-09-20 | 一种光学晶体的退火装置及退火方法 |
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CN109056075A true CN109056075A (zh) | 2018-12-21 |
CN109056075B CN109056075B (zh) | 2020-11-24 |
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CN201811096847.9A Active CN109056075B (zh) | 2018-09-20 | 2018-09-20 | 一种光学晶体的退火装置及退火方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116377593A (zh) * | 2023-03-30 | 2023-07-04 | 河南驭波科技有限公司 | 降低氟化镁晶体空位缺陷的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1373820A (zh) * | 1999-06-07 | 2002-10-09 | 康宁股份有限公司 | 晶体生长和退火方法以及装置 |
US20090180948A1 (en) * | 2004-02-23 | 2009-07-16 | Joerg Staeblein | METHOD OF MAKING LARGE-VOLUME CaF2 SINGLE CRYSTALS FOR OPTICAL ELEMENTS WITH AN OPTIC AXIS PARALLEL TO THE (100)-OR (110)-CRYSTAL AXIS AND CaF2 SINGLE CRYSTAL MADE THEREBY |
CN201753314U (zh) * | 2010-07-13 | 2011-03-02 | 斯坦因(上海)工业炉有限公司 | 退火窑加热系统 |
CN103643301A (zh) * | 2013-12-20 | 2014-03-19 | 中国科学院上海硅酸盐研究所 | 一种对大尺寸氟化钙晶体进行退火的方法 |
CN104695025A (zh) * | 2013-12-05 | 2015-06-10 | 长春理工大学 | 抗热冲击快速升温CaF2晶体退火装置 |
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2018
- 2018-09-20 CN CN201811096847.9A patent/CN109056075B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1373820A (zh) * | 1999-06-07 | 2002-10-09 | 康宁股份有限公司 | 晶体生长和退火方法以及装置 |
US20090180948A1 (en) * | 2004-02-23 | 2009-07-16 | Joerg Staeblein | METHOD OF MAKING LARGE-VOLUME CaF2 SINGLE CRYSTALS FOR OPTICAL ELEMENTS WITH AN OPTIC AXIS PARALLEL TO THE (100)-OR (110)-CRYSTAL AXIS AND CaF2 SINGLE CRYSTAL MADE THEREBY |
CN201753314U (zh) * | 2010-07-13 | 2011-03-02 | 斯坦因(上海)工业炉有限公司 | 退火窑加热系统 |
CN104695025A (zh) * | 2013-12-05 | 2015-06-10 | 长春理工大学 | 抗热冲击快速升温CaF2晶体退火装置 |
CN103643301A (zh) * | 2013-12-20 | 2014-03-19 | 中国科学院上海硅酸盐研究所 | 一种对大尺寸氟化钙晶体进行退火的方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116377593A (zh) * | 2023-03-30 | 2023-07-04 | 河南驭波科技有限公司 | 降低氟化镁晶体空位缺陷的方法 |
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CN109056075B (zh) | 2020-11-24 |
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Denomination of invention: Annealing device and annealing method for optical crystal Effective date of registration: 20220207 Granted publication date: 20201124 Pledgee: Changjiang Technology sub branch of Qinhuangdao Bank Co.,Ltd. Pledgor: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. Registration number: Y2022980001386 |
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Date of cancellation: 20230202 Granted publication date: 20201124 Pledgee: Changjiang Technology sub branch of Qinhuangdao Bank Co.,Ltd. Pledgor: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. Registration number: Y2022980001386 |
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Effective date of registration: 20230420 Address after: 066000 No. 1 Xihu Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee after: Qinhuangdao Heyi Technology Co.,Ltd. Address before: 066000 No. 1 Xihu Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee before: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. |