CN108942572B

CN108942572B - Multi-station processing method and multi-station processing machine for single crystal silicon rod

Info

Publication number: CN108942572B
Application number: CN201710359458.XA
Authority: CN
Inventors: 卢建伟; 李鑫
Original assignee: Tiantong Rijin Precision Technology Co ltd
Current assignee: Tiantong Rijin Precision Technology Co ltd
Priority date: 2017-05-19
Filing date: 2017-05-19
Publication date: 2021-04-09
Anticipated expiration: 2037-05-19
Also published as: CN108942572A

Abstract

The application discloses a multi-station processing method and a multi-station processing machine for a single crystal silicon rod, wherein the method is applied to the multi-station processing machine for the single crystal silicon rod with a circle cutting and coarse grinding device, and comprises the following steps: placing the single crystal silicon rod to be processed in an operation area of the circle cutting and coarse grinding device; enabling the circle cutting and rough grinding device to cut the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod into circles; and enabling the circle cutting and rough grinding device to perform rough grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod. By using the single crystal silicon rod multi-station processing method and the single crystal silicon rod multi-station processing machine disclosed by the application, the single crystal silicon rod can be subjected to multi-station processing operation comprising circle cutting and coarse grinding operation, the production efficiency can be improved, and the quality of the single crystal silicon rod processing operation can be improved.

Description

Multi-station processing method and multi-station processing machine for single crystal silicon rod

Technical Field

The application relates to the technical field of silicon workpiece processing, in particular to a multi-station processing method and a multi-station processing machine for a single crystal silicon rod.

Background

At present, with the importance and the openness of the society on the utilization of green renewable energy sources, the field of photovoltaic solar power generation is more and more valued and developed. In the field of photovoltaic power generation, conventional crystalline silicon solar cells are fabricated on high quality silicon wafers that are cut and subsequently processed by multi-wire saw from a pulled or cast silicon ingot.

In the conventional silicon wafer manufacturing process, taking a single crystal silicon product as an example, the general working procedures may include: firstly, a silicon rod cutting machine is used for cutting the original long silicon rod to form a plurality of sections of short silicon rods; after the cutting is finished, cutting the cut short silicon rod by using a silicon rod cutting machine to form a single crystal silicon rod; then, processing operations such as rounding, surface grinding and the like are carried out on each single crystal silicon rod, so that the surface of each single crystal silicon rod is shaped to meet the requirements of corresponding flatness and dimensional tolerance; and subsequently, slicing the single crystal silicon rod by using a slicing machine to obtain the single crystal silicon slice.

However, in the related art, the rounding and surface grinding operations for the silicon single crystal are complicated in operation steps and poor in effect, and further, operations required for each process operation (for example, grinding, chamfering, barreling, or rounding) are independently arranged, the corresponding processing apparatuses are distributed in different production units or different production areas of a production workshop or a production workshop, transfer of workpieces for performing different process operations requires transfer and allocation, and a pretreatment operation may be required before each process operation is performed, so that the processes are complicated, the efficiency is low, and the quality of the silicon single crystal rod processing operation is easily affected.

Content of application

In view of the above disadvantages of the related art, the present application discloses a method and a machine for processing a single crystal silicon rod at multiple stations, which are used to solve the problems of the related art, such as complicated rounding and surface grinding operation, poor effect, and coordination of multiple stations.

To achieve the above and other objects, the present application discloses in one aspect a multi-station processing method of a single crystal silicon rod for use in a multi-station processing machine of a single crystal silicon rod having a rounding and rough grinding apparatus, the multi-station processing method of a single crystal silicon rod comprising the steps of: placing the single crystal silicon rod to be processed in an operation area of the circle cutting and coarse grinding device; enabling the circle cutting and rough grinding device to cut the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod into circles; and enabling the circle cutting and rough grinding device to perform rough grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod.

In some embodiments, the rounding and rough grinding device for rounding the first and second pairs of connecting facets of the single crystal silicon rod comprises: and enabling the circle cutting and rough grinding device to perform rough cutting operation on the first pair of connecting edge surfaces and the second pair of connecting edge surfaces of the single crystal silicon rod for at least three times respectively.

In certain embodiments, the roughly cutting the first and second pairs of connecting facets of the single crystal silicon rod with the round and rough grinding device at least three times comprises: rotating a pair of connecting prism surfaces in the single crystal silicon rod to an initial rough cutting position to correspond to a pair of first grinding tools in the circle and rough grinding device; the first grinding tool carries out primary rough cutting operation on the pair of connecting edge surfaces; the single crystal silicon rod is positively rotated by a first deflection angle relative to the initial rough cutting position, and the first grinding tool is used for carrying out secondary rough cutting operation on the first pair of connecting edge surfaces; and reversely rotating the single crystal silicon rod by a second deflection angle relative to the initial rough cutting position, and enabling the first grinding tool to perform rough cutting operation for the third time on the pair of connecting edge surfaces.

In certain embodiments, the first deflection angle ranges from 3 ° to 7 °, and the second deflection angle ranges from 3 ° to 7 °.

In some embodiments, the step of roughly grinding one of the first pair and the second pair of sides of the single crystal silicon rod by the circle and rough grinding device comprises the steps of: rotating a pair of side surfaces in the single crystal silicon rod to an initial rough grinding position to correspond to a pair of first grinding tools; and enabling the first grinding tool to perform rough grinding operation on the pair of side surfaces.

In certain embodiments, the single crystal silicon rod multi-station processing machine further comprises a rounding and fine grinding device; the multi-station processing method of the single crystal silicon rod further comprises the following steps: placing the to-be-processed single crystal silicon rod in an operation area of the rounding and fine grinding device; enabling the rounding and fine grinding device to carry out rounding operation on the connecting edge surface of the silicon single crystal rod; and enabling the rounding and fine grinding device to carry out fine grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod.

In some embodiments, the rounding and fine grinding device for rounding the connecting edge surface of the single crystal silicon rod comprises the following steps: adjusting the grinding distance of a pair of second grinding tools in the rounding and fine grinding device; and rotating the single crystal silicon rod to enable the second grinding tool to perform rounding operation on the connecting edge surface of the single crystal silicon rod.

In some embodiments, the step of causing the rounding and refining apparatus to refine one of the first pair and the second pair of sides of the single crystal silicon rod comprises the steps of: rotating a pair of side surfaces in the single crystal silicon rod to an initial finish grinding position to correspond to a pair of second grinding tools; and enabling the second grinding tool to carry out fine grinding operation on the pair of side surfaces.

In some embodiments, the multi-station processing method of the single crystal silicon rod further comprises the step of performing deviation rectifying operation on the single crystal silicon rod to be processed.

The application discloses a single crystal silicon rod multi-station processing machine applying the single crystal silicon rod multi-station processing method.

Drawings

Fig. 1 is a schematic perspective view of a single-crystal silicon rod multi-station processing machine according to an embodiment of the present disclosure.

Fig. 2 is a top view of a single crystal silicon rod multi-station processing machine according to an embodiment of the present invention.

Fig. 3 is a side view of a single crystal silicon rod multi-station processing machine according to an embodiment of the present invention.

Fig. 4 is a schematic view showing a silicon rod clamping member in the multi-station single crystal silicon rod processing machine according to the present application.

Fig. 5 is a schematic view showing a silicon rod clamping member in another embodiment of the multi-station single crystal silicon rod processing machine according to the present application.

FIG. 6 is a rear view of a silicon rod clamp in the multi-station processing machine for single crystal silicon rods according to the present application.

Fig. 7 is a schematic flow chart of a multi-station processing method of a single crystal silicon rod according to an embodiment of the present disclosure.

Fig. 8 is a schematic view of a detailed flow of fig. 7 in an alternative embodiment.

Fig. 9 is a schematic view of a detailed flow of fig. 7 in another alternative embodiment.

Fig. 10 is a schematic flow chart of a multi-station processing method of a single crystal silicon rod according to another embodiment of the present application.

Fig. 11 is a schematic view of a detailed flow of fig. 10 in an alternative embodiment.

Fig. 12 is a schematic view of a refinement process of fig. 10 in another alternative embodiment.

Fig. 13 is a schematic flow chart of a multi-station processing method of a single crystal silicon rod according to the present application.

Fig. 14 is a schematic view showing a state in which a single crystal silicon rod is placed upright on a silicon rod support table.

FIG. 15 is a schematic view showing a state where a single crystal silicon rod is held by a silicon rod holder.

FIG. 16 is a schematic view showing a state where the single crystal silicon rod is placed in the pretreatment operation area by the reversing carrier.

FIG. 17 is a schematic view showing a state in which a height detector detects the height of a single crystal silicon rod placed on a loading/unloading carrier.

Fig. 18 and 19 are schematic diagrams showing a state that the flatness detector detects the plane flatness of the single crystal silicon rod.

FIG. 20 is a schematic view showing a deviation rectifying operation performed on a single crystal silicon rod.

Fig. 21 is a schematic view showing the first single crystal silicon rod undergoing round and rough grinding operations and the second single crystal silicon rod being loaded.

FIG. 22 is a schematic view showing a state change of a single crystal silicon rod during a round cutting operation.

Fig. 23 is a schematic view showing a state change of the single crystal silicon rod during the rough grinding operation.

Fig. 24 is a schematic view showing a state where the single crystal silicon rod multi-station processing machine of the present application performs processing operations on three single crystal silicon rods at the same time.

FIG. 25 is a view showing a state of a single crystal silicon rod in a rounding process.

FIG. 26 is a schematic view showing a state of a single crystal silicon rod in a finish grinding process.

Fig. 27 is a schematic view showing a state of discharging a single crystal silicon rod for completing a processing operation.

Fig. 28 is a schematic view showing a state of the multi-station processing machine for a single crystal silicon rod according to the present invention in a three-station processing operation.

Detailed Description

The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application.

It should be noted that the structures, ratios, sizes, and the like shown in the drawings attached to the present specification are only used for matching the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions that the present application can be implemented, so that the present application has no technical essence, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the disclosure of the present application without affecting the efficacy and the achievable purpose of the present application. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present application, and changes or modifications in the relative relationship may be made without substantial technical changes.

Fig. 1 to 3 are schematic structural views illustrating a multi-station processing machine for a single crystal silicon rod according to an embodiment of the present invention, wherein fig. 1 is a schematic perspective view of the multi-station processing machine for a single crystal silicon rod according to the embodiment of the present invention, fig. 2 is a top view of the multi-station processing machine for a single crystal silicon rod according to the embodiment of the present invention, and fig. 3 is a side view of the multi-station processing machine for a single crystal silicon rod according to the embodiment of the present invention. In one embodiment, the multi-station processing machine for the single crystal silicon rod is used for processing operation on the single crystal silicon rod, wherein the single crystal silicon rod is a quasi-rectangular silicon rod.

For a single crystal silicon rod, a process for forming the single crystal silicon rod may comprise: firstly, a silicon rod cutting machine is used for cutting the original long silicon rod to form a plurality of sections of short silicon rods; and after the cutting is finished, cutting the cut short silicon rod by using a silicon rod cutting machine to form the silicon single crystal rod with the rectangular-like cross section. Among them, patent publications such as CN105856445A, CN105946127A, and CN105196433A are referred to as a specific embodiment of forming a multi-stage short silicon rod by cutting an original long silicon rod with a silicon rod cutting machine, and patent publication such as CN105818285A is referred to as a specific embodiment of forming a single crystal silicon rod having a rectangular-like cross section by cutting a cut short silicon rod with a silicon rod cutting machine. However, the process for forming the single crystal silicon rod is not limited to the foregoing technique, and in alternative examples, the process for forming the single crystal silicon rod may further include: firstly, using a full silicon rod squaring machine to perform squaring operation on an original long silicon rod to form a long monocrystalline silicon rod with a quasi-rectangular cross section; and after the cutting is finished, cutting the cut long monocrystalline silicon rod by using a silicon rod cutting machine to form a short crystalline silicon rod. Among them, a specific embodiment of the above-described method for forming a long single crystal silicon rod having a substantially rectangular shape by squaring an initial long silicon rod using an all-silicon-rod squarer is disclosed in patent publication CN106003443A, for example.

After the formation of the single crystal silicon rod, the single crystal silicon rod is subjected to corresponding subsequent processing operations, such as rounding, rough grinding, rounding, and finish grinding, which can be performed by the single crystal silicon rod multi-station processing machine disclosed in the present application.

Referring to fig. 1 to 3, the multi-station processing machine for single crystal silicon rods of the present application includes: the device comprises a base 1, a silicon rod loading and unloading device 2, a circle cutting and coarse grinding device 3, a circle rolling and fine grinding device 4 and a silicon rod conversion device 5.

The machine base 1 is a main body part of the single crystal silicon rod multi-station processing machine of the present application, and has a silicon rod processing platform, wherein the silicon rod processing platform can be divided into a plurality of operation areas according to specific operation contents of single crystal silicon rod processing operation. Specifically, in this embodiment, the silicon rod processing platform at least includes a pretreatment operation area, a first operation area, and a second operation area.

The silicon rod transfer device 5 is provided in the central region of the silicon rod processing platform, and is configured to transfer the single crystal silicon rod 100 loaded by the silicon rod loading and unloading device 2 among the pretreatment operation region, the first operation region, and the second operation region on the silicon rod processing platform. In an embodiment, a silicon rod transfer device 5 is rotatably disposed on the silicon rod processing platform, the silicon rod transfer device 5 comprising: a disc-shaped or circular ring-shaped conveying body 51; the silicon rod positioning mechanism 53 is arranged on the conveying body 51 and used for positioning the single crystal silicon rod 100; the conversion driving mechanism is used for driving the conveying body 51 to rotate so as to drive the silicon rod positioning mechanism 53 to convert the position of the silicon single crystal rod 100.

As described above, the silicon rod processing platform in one embodiment includes the pretreatment operation area, the first operation area, and the second operation area, and in order to be adapted to these operation areas, the number of the silicon rod positioning mechanisms 53 on the conveying body 51 may be set to three, and each silicon rod positioning mechanism 53 may position one silicon single crystal rod. Further, the angles set between every two of the three silicon rod positioning mechanisms 53 are also consistent with the angle distribution between every two of the three operation areas. In this way, when one silicon rod positioning mechanism 53 corresponds to one operation area, inevitably, the other two silicon rod positioning mechanisms 53 also correspond to the other two operation areas, respectively. Thus, in the in-line operation, when one single crystal silicon rod is positioned on each silicon rod positioning mechanism 53 and the silicon rod positioning mechanisms 53 correspond to the operation areas at any time, the single crystal silicon rods are positioned at the corresponding operation area to perform the corresponding processing operation, for example: the silicon single crystal rod positioned in the pretreatment operation area can be subjected to pretreatment operation, the silicon single crystal rod positioned in the first operation area can be subjected to circle cutting and rough grinding operation, and the silicon single crystal rod positioned in the second operation area can be subjected to circle rolling and fine grinding operation. In an alternative embodiment, the pretreatment operation area, the first operation area and the second operation area on the silicon rod processing platform are distributed at 120 ° with respect to each other, so that correspondingly, three silicon rod positioning mechanisms 53 on the disc-shaped or ring-shaped conveying body 51 are also distributed at 120 ° with respect to each other. Of course, the number of the silicon rod positioning mechanisms 53 may be varied according to actual requirements, and is not limited thereto, for example, the number of the silicon rod positioning mechanisms 53 may be determined according to the number of the operation areas provided on the silicon rod processing platform.

In one embodiment, the silicon rod positioning mechanism 53 may further include: a rotary bearing platform 531, a rotary pressing device 533, a lifting driving device (not shown), and a rotary driving device (not shown).

The rotary carrying table 531 is disposed on the disc-shaped or ring-shaped conveying body 51 in the silicon rod transfer device 5, and is used for carrying the single crystal silicon rod 100 and making the single crystal silicon rod 100 stand, that is, the bottom of the single crystal silicon rod 100 is seated on the rotary carrying table 531. In the present embodiment, the susceptor 531 is rotated and rotated together with the rotation of the disk-shaped or ring-shaped transfer body 51 in the silicon rod transfer device 531. In particular, the rotary susceptor 531 may be configured to rotate, for example, the rotary susceptor 531 may have a rotation axis relative to the conveying body 51 to rotate, so that the rotary susceptor 531 and the silicon single crystal rod 100 thereon rotate together after the rotary susceptor 531 supports the silicon single crystal rod 100. Further, the contact surface of the rotary stage 531 for contacting the silicon single crystal rod 100 has a damping to provide a certain friction force capable of driving the silicon single crystal rod 100. The rotary bearing 531 is adapted to the single crystal silicon rod 100, and in an alternative embodiment, the rotary bearing 531 may be a circular bearing adapted to the cross-sectional dimension of the single crystal silicon rod 100.

The rotating pressing device 533 is disposed above the rotating carrier 531, and is used for pressing the top of the single crystal silicon rod 100 to press the single crystal silicon rod 100. The rotating pressing device 533 may further include a movably disposed support 532 and a pressing block 534 disposed at the bottom of the support 532. The support 532 is movably mounted on a central mounting frame 13, and the central mounting frame 13 is located in the central area of the conveying body 51 and rotates along with the conveying body 51. In a specific implementation, the central mounting frame 13 may include at least six vertically disposed mounting posts 131, and each group is divided into three groups, wherein two mounting posts 131 in each group are used for movably disposing a support 532, and each support 532 is driven by a lifting driving device to move up and down along the mounting posts 131. In an alternative embodiment, the mounting post 131 is a cylindrical structure with a smooth surface, and if necessary, the surface of the mounting post 131 may be coated with a lubricant to facilitate the smoothness of the lifting movement of the support 532. Additionally, a protective sleeve may be sleeved on the mounting post 131 to protect the mounting post 131 from dust, impurities, and the like. The top press movable block 534 is adapted to the single crystal silicon rod 100, and in an alternative embodiment, the top press movable block 534 may be a disk-shaped press block adapted to the cross-sectional size of the single crystal silicon rod 100. Further, a pressing movable block 534 of the rotary pressing device 533 is pivotally connected to the support 532 and can rotate relative to the support 532.

As can be seen from the foregoing, the rotary supporting platform 531 is configured to rotate and the pressing movable block 534 of the rotary pressing device 533 is pivotally connected to the support 532, so that the rotary supporting platform 531 or the pressing movable block 534 can be linked to a rotary driving device. In one case, when the rotary stage 531 is coupled to a rotary driving device, the rotary stage 531 serves as a driving rotation member and the pressing movable block 534 serves as a driven rotation member; in another case, when the pressing movable block 534 is coupled to a rotation driving device, the pressing movable block 534 serves as a driving rotation member and the rotation platform 531 serves as a driven rotation member.

In practical applications, the rotating pressing device 533 can cooperate with the rotating platform 531 therebelow, specifically, after the single crystal silicon rod 100 is vertically placed on the rotating platform 531, the lifting driving device drives the support 532 to move downward along the mounting column 131 until the top pressing movable block 534 on the support 532 presses against the top of the single crystal silicon rod 100. Subsequently, when the single crystal silicon rod 100 needs to be rotated, the rotary bearing platform 531 or the jacking movable block 534 which are linked are driven by the rotary driving device to rotate, and the friction force among the rotary bearing platform 531, the single crystal silicon rod 100 and the jacking movable block 534 is utilized to drive the single crystal silicon rod 100 to rotate together, so that the adjustment of the operation surface or the operation area in the single crystal silicon rod 100 is realized, and the processing operation is performed on the adjusted operation surface or the adjusted operation area in the single crystal silicon rod 100. The rotation speed and the rotation angle of the single crystal silicon rod 100 can be controlled by the rotation driving means. In a specific implementation manner, the lifting driving device may be, for example, an air cylinder or a lifting motor, and the rotation driving device may be, for example, a rotating motor.

The disc-shaped or circular-ring-shaped conveying body 51 is driven by the conversion driving mechanism to rotate, and the silicon rod positioning mechanism 53 on the conveying body 51 and the single crystal silicon rod 100 positioned by the silicon rod positioning mechanism 53 are converted between different operation areas through the rotation of the disc-shaped or circular-ring-shaped conveying body 51. In one embodiment, the switching drive mechanism further comprises: a conversion toothed belt arranged on the periphery of the disc-shaped or circular-ring-shaped conveying body 51; the silicon rod processing device comprises a driving motor and a linkage structure which is connected with the driving motor and driven by the driving motor, the linkage structure is arranged on a silicon rod processing platform of the base 1, and the linkage structure comprises a rotating gear meshed with the conversion toothed belt. In this way, the rotary gear is driven by the driving motor to drive the disc-shaped or circular-ring-shaped conveying body 51 to rotate so as to drive the silicon rod positioning mechanism 53 and the single crystal silicon rod 100 thereon to be transferred to other operation areas to complete conveying, and the driving motor may be a servo motor.

The silicon rod loading and unloading device 2 is arranged in the pretreatment operation area of the silicon rod processing platform and is used for loading the single crystal silicon rod to be processed to the pretreatment operation area of the silicon rod processing platform and unloading the processed single crystal silicon rod from the pretreatment operation area of the silicon rod processing platform. Further, the silicon rod loading and unloading device 2 is used for loading the silicon single crystal rod to be processed into the pretreatment operation area of the silicon rod processing platform and unloading the processed silicon single crystal rod from the pretreatment operation area of the silicon rod processing platform, specifically, for loading the silicon single crystal rod to be processed onto the rotary carrying table 531 corresponding to the pretreatment operation area of the silicon rod processing platform in the conveying body 51 and unloading the processed silicon single crystal rod from the rotary carrying table 531 corresponding to the pretreatment operation area of the silicon rod processing platform in the conveying body 51.

In one embodiment, the silicon rod handling device 2 further comprises: a silicon rod loading and unloading location, a reversing carrier 23 and a silicon rod clamp 25.

A silicon rod bearing table 21 for bearing the vertical placement of the single crystal silicon rod 100 is arranged at the silicon rod loading and unloading position; the reversing carrier 23 is used for reversing movement; the silicon rod clamp 25 is arranged on the first mounting surface of the reversing carrier 23. By driving the reversing carrier 23 to perform reversing movement, the silicon rod clamp 25 of the reversing carrier 23 is switched between the silicon rod loading and unloading area and the pretreatment operation area to transfer the single crystal silicon rod 100.

The silicon rod loading and unloading device is arranged on a bottom mounting structure, and the bottom mounting structure is convexly arranged on the machine base 1. One side of the bottom mounting structure serves as a silicon rod loading and unloading region, a silicon rod bearing table 21 is arranged on the silicon rod loading and unloading region, and the silicon rod bearing table 21 is used for bearing the single crystal silicon rod 100. In a preferred embodiment, in order to facilitate the holding of the silicon rod holder 25, if the position of the supported single crystal silicon rod 100 can be adjusted to fit the silicon rod holder 25 at a proper time, the silicon rod carrier 21 is designed to be rotatable, the silicon rod carrier 21 is provided with a rotating shaft and a driving motor, and the silicon rod carrier 21 is rotated around the rotating shaft under the control of the driving motor to adjust the angle of the single crystal silicon rod 100 on the silicon rod carrier 21. In addition, in an alternative embodiment, the silicon rod carrying platform 21 may be a lifting type, that is, the rotating shaft below the silicon rod carrying platform 21 is controlled to be capable of performing a telescopic action to drive the silicon rod carrying platform 21 to perform a lifting motion, so as to adjust the height of the silicon single crystal rod on the silicon rod carrying platform 21.

The reversing carrier 23 is arranged on the bottom mounting structure and can perform reversing motion relative to the bottom mounting structure. In one embodiment, the reversing vehicle 23 is reversed by a reversing mechanism. The reversing mechanism for realizing the reversing motion of the reversing carrier 23 can comprise a rotating shaft and a reversing motor, and the reversing carrier 23 is connected with a bottom mounting structure below the rotating shaft through the rotating shaft. When the steering movement is implemented, the reversing motor is started to drive the rotating shaft to rotate so as to drive the reversing carrier 23 to rotate to implement the reversing movement. The aforementioned rotation of the drive rotation shaft may be designed as a one-way rotation, which may be, for example, a clockwise rotation or a counterclockwise rotation, or as a two-way rotation, which may be, for example, a clockwise rotation and a counterclockwise rotation. In addition, the angle by which the driving rotation shaft is rotated may be set according to the actual configuration of the silicon rod handling device, which may be, for example, according to the positional relationship between the silicon rod handling region and the pretreatment operation region, or the configuration of the reversing carrier 23, or the like. The central position of the reversing base 231 in the reversing carrier 23 is connected to the rotating shaft, and generally, the shape of the reversing base 231 may be a circular disk structure, but not limited thereto, and a square disk or an elliptical disk may also be used.

In addition, if necessary, due to the design of the mechanical structure, the position relationship between the silicon rod loading and unloading area and the pretreatment operation area cannot satisfy that the silicon rod clamp 25 on the reversing carrier 23 can correspond to the silicon rod loading and unloading area and the pretreatment operation area by the reversing motion of the reversing carrier 23, and at this time, the silicon rod loading and unloading device can also comprise a translation mechanism for driving the reversing carrier 23 to move in translation towards/away from the pretreatment operation area relative to the bottom mounting structure. In one embodiment, the silicon rod handling device is further provided with a transfer base 241 between the reversing carrier 23 and the bottom mounting structure, wherein the reversing carrier 23 is connected to the transfer base 241 through a rotating shaft, and the transfer base 241 is erected on the bottom mounting structure through a translation mechanism.

In one implementation, the translation mechanism further comprises: the translation rack is arranged on the bottom mounting structure along the translation direction; the translation rotating gear is arranged on the conversion chassis 241 and is meshed with the translation rack; a translation drive motor (not shown) for driving the translation gear to rotate so as to advance and retract the conversion chassis 241 and the reversing carrier 23 thereon relative to the bottom mounting structure along the translation rack.

In practice, the translating rack may be, for example, at least one rack having a length, which may be mounted to the bottom mounting structure. In order to make the switching chassis 241 and the reversing carrier 23 thereon move more smoothly along the translation direction, at least two translation gears may be configured for each rack, and the at least two translation gears are arranged at intervals. The translation gear can be in transmission connection with the translation driving motor through the transmission shaft. The translation drive motor may be, for example, a servo motor.

In practical application, as mentioned above, the translation mechanism includes the translation rack, the translation gear, and the translation driving motor drives the translation gear to rotate so as to make the conversion chassis 241 and the reversing carrier 23 thereon move along the translation rack, thereby achieving the purpose of accurate movement. The above-mentioned translation mechanism is only an example, but not intended to limit the present application, and may be modified, in other alternative embodiments, the translation mechanism may include: the screw rod has the characteristics of high precision, reversibility and high efficiency, so, the matching of the servo motor and the screw rod improves the accuracy of horizontal advancing of the conversion chassis 241 and the reversing carrier 23 thereon in the translation direction, namely, the distance of horizontal advancing of the conversion chassis 241 and the reversing carrier 23 thereon in the translation direction is more accurate.

Further, the translation mechanism may further include a translation guide rail and a translation sliding seat, wherein the translation guide rail is disposed at the bottom of the conversion chassis 241 along the translation direction, the translation sliding seat is mounted on the bottom mounting structure, and the translation guide rail is matched with the translation sliding seat to assist the conversion chassis 241 and the reversing carrier 23 thereon to move along the translation direction. In practical application, the translation gear is driven by the translation driving motor to rotate so as to enable the conversion chassis 241 and the reversing carrier 23 thereon to move along the translation rack, and meanwhile, as a translation guide rail and a translation sliding seat of the auxiliary facility, the translation guide rail slides in the translation sliding seat, so that the conversion chassis 241 and the reversing carrier 23 thereon move along the translation direction. Alternatively, in other embodiments, the translation mechanism may further include a translation guide rail and a translation slider, wherein the translation guide rail is disposed on the bottom mounting structure along the translation direction, the translation slider is mounted at the bottom of the conversion chassis 241, and the translation slider can slide along the translation guide rail through cooperation between the translation guide rail and the translation slider, so as to assist the conversion chassis 241 and the reversing carrier 23 thereon to move along the translation direction.

The silicon rod holder 25 is used for holding a single crystal silicon rod. In an embodiment, the silicon rod clamp 25 comprises: a clamp mount 251 and at least two silicon rod clamping members 253. The jig mount 251 is provided on the reversing carrier 23. At least two silicon rod clamping members 253 are arranged at intervals along the clamp mount 251. In one embodiment, the workpiece support platform at the silicon rod loading and unloading location can support the single crystal silicon rod to be vertically placed, and thus, the at least two silicon rod clamping members 253 are vertically spaced, that is, the at least two silicon rod clamping members 253 are vertically disposed.

In a specific implementation manner, each silicon rod clamping member 253 further includes: the clamp arm comprises a clamp arm mounting seat 252 and at least two clamp arms 254, wherein the clamp arm mounting seat 252 is arranged on the clamp mounting part 251, and the at least two clamp arms 254 are movably arranged on the clamp arm mounting seat 252. Since the section of the silicon single crystal rod to be processed is mostly rectangular-like, in one embodiment, the silicon rod holder 253 as a whole is a square workpiece holder, the two clamp arms 254 constituting the silicon rod holder 253 are symmetrically designed, and the single clamp arm 254 is designed to have a single flat clamp surface (see fig. 4) or a bevel clamp surface (see fig. 5) which is composed of two continuous flat clamp surfaces with a bevel therebetween. Certainly, a cushion pad can be additionally arranged on the straight clamping surface in the clamping arm 254 to avoid damage to the surface of the single crystal silicon rod in the process of clamping the single crystal silicon rod, and a good effect of protecting the single crystal silicon rod is achieved. Additionally, the silicon rod holding member 253 can also serve as a centering adjustment.

In general, when the clamping arms 254 of the silicon rod clamping part 253 are in a clamped state, the center of the clamping space formed by the two clamping arms 254 coincides with the center of the silicon rod support table 21. Therefore, taking the silicon rod holder 253 with the clamp arms 254 shown in fig. 5 as an example, when the silicon rod holder 253 is used to clamp the single crystal silicon rod 100 standing on the single crystal silicon rod bearing table 21, the clamp arms 254 in the silicon rod holder 253 shrink to abut against the single crystal silicon rod 100 by the bevel clamp surfaces in the clamp arms 254, wherein two straight clamp surfaces in the bevel clamp surfaces correspond to two adjacent side surfaces in the single crystal silicon rod 100 respectively. During the process that the clamping arms 254 contract and clamp the single crystal silicon rod 100, the single crystal silicon rod 100 is pushed by the two clamping arms 254 at both sides and moves toward the central region of the clamping space until the single crystal silicon rod 100 is clamped by the two clamping arms 254 in the silicon rod clamping part 253, and at this time, the center of the single crystal silicon rod 100 can be located at the center of the clamping space of the silicon rod clamping part 253. In particular, in order to enable the at least two clamping arms 254 of the silicon rod clamping part 253 to smoothly and stably clamp different types of single crystal silicon rods with different dimensions, the silicon rod clamping part 253 further comprises a clamping arm driving mechanism for driving the at least two clamping arms 254 to open and close.

Referring to fig. 6, a rear view of the silicon rod clamp 25 is shown. In a specific implementation, as shown in fig. 6, the clamping arm driving mechanism further includes: an opening and closing gear 255, a gear driver 256, and a driving source 257.

The opening and closing gears 255 are disposed on the corresponding clamping arms 254. The gear drive 256 has splines that engage the opening and closing gears 255 on the clamp arms 254. The driving source is connected to the gear driving member 256 for driving the gear driving member 256 to move. In one implementation, the gear driving member 256 is a rack, the rack 256 is located between the two clamping arms 254, two outer side surfaces of the clamping arms 254 facing to two sides of the rack are respectively provided with a tooth pattern corresponding to the engagement of the opening and closing gears 255 on the two clamping arms 254, and the driving source 257 can be, for example, a driving motor or an air cylinder.

Thus, according to the above implementation manner, in practical applications, when the clamping of the clamping arms 254 is to be realized, the rack 256 serving as a gear driving member is driven by a driving motor or an air cylinder serving as a driving source to move upward, the rack 256 drives the opening and closing gears 255 engaged at both sides to perform outward rotation, and the opening and closing gears 255 drive the clamping arms 254 (the opening and closing gears 255 and the clamping arms 254 can be connected through a rotating shaft) to perform downward movement in the outward rotation process so as to be switched from the unclamped state to the clamped state; on the contrary, when the clamp arm 254 needs to be released, the driving motor (or cylinder) as the driving source drives the rack 256 as the gear driving member to move downward, the rack 256 drives the opening and closing gear 255 engaged at both sides to perform an inward rotation, and the opening and closing gear 255 drives the clamp arm 254 (the opening and closing gear 255 is connected with the clamp arm 254 through the rotating shaft) to perform an upward movement in the inward rotation process so as to be converted from the clamping state to the releasing state. Of course, the above is only an example, and is not intended to limit the operation state of the silicon rod clamping member 253, and actually, the above-mentioned "up", "outward rotation", "downward", "inward rotation", "upward", and "unclamping" and "clamping" state changes may be changed according to the structure and operation manner of the clamping arm 254 and the configuration of the clamping arm driving mechanism.

In one implementation, the silicon rod clamp 25 employs a fixed silicon rod holder, that is, as many silicon rod holders 253 as possible are vertically and fixedly disposed on the first mounting surface of the reversing carrier 23, and the distance between two adjacent silicon rod holders 253 in the silicon rod holders 253 is as small as possible, so that the silicon rod holders 253 can cover various specifications and lengths of single crystal silicon rods. For example, if the length of the single crystal silicon rod is long, more silicon rod holding members 253 on the reversing carrier 23 are used for holding; if the length of the single crystal silicon rod is short, fewer silicon rod holding members 253 on the reversing carrier 23 are used to participate in the holding.

In other implementations, the silicon rod clamp 25 is a movable silicon rod clamp, that is, the silicon rod clamp 253 is vertically movably disposed on the first mounting surface of the reversing carrier 23, and since the silicon rod clamp 253 is movably designed, the number of the silicon rod clamps 253 can be greatly reduced, and generally two or three silicon rod clamps can be satisfied. Thus, the movable silicon rod holders 253 can cover various specifications and lengths of single crystal silicon rods. For example, if the length of the single crystal silicon rod is long, the silicon rod holding members 253 are moved to extend the holding distance between the two silicon rod holding members 253; if the length of the single crystal silicon rod is short, the silicon rod holding members 253 are moved to shorten the holding distance between the two silicon rod holding members 253. In an implementation manner in which the silicon rod clamp 25 employs the movable silicon rod clamping member, in order to facilitate smooth and stable up-and-down movement of the movable silicon rod clamping member for adjusting the position, the clamp mounting member 251 in the silicon rod clamp 25 may be utilized to play a role in guiding the movable silicon rod clamping member 253. Specifically, the guide post structure as the clamp mounting member 251 includes two guide posts vertically arranged and parallel to each other, and the movable block structure as the clamp arm mounting seat 252 has two through holes or two clamps corresponding to the two guide posts in the guide post structure. If a through hole is adopted, the movable block is sleeved on the guide post and can slide along the guide post. If a clamp is adopted, the movable block is clamped on the guide post and can slide along the guide post, wherein in practical application, the clamp can be clamped on at least one half part of the guide post.

There are also different variations of the silicon rod holder 25 of the movable silicon rod holder 253. Taking the two silicon rod holding members 253 as an example, in an alternative embodiment, one silicon rod holding member 253 of the two silicon rod holding members 253 is movably designed, and the other silicon rod holding member 253 is fixedly designed, so that in practical applications, the holding distance between the one silicon rod holding member 253 of the movable design and the silicon rod holding member 253 of the fixedly designed is adjusted by moving the one silicon rod holding member 253 of the movable design. As can be seen from the above, the silicon single crystal rod 100 is vertically placed, so that the bottom of the silicon single crystal rod 100 can be relatively easily determined regardless of the gauge length of the silicon single crystal rod, and therefore, it is preferable that the upper one 253 of the two silicon rod holding members 253 be designed to be movable, so that only the position of the upper silicon rod holding member 253 needs to be adjusted. To enable the movement of the silicon rod holder 253, the movably designed silicon rod holder 253 may be provided with a guide drive. The silicon rod holding part 253, which is designed to be movable, can be driven by means of a guide drive mechanism to move up and down along the jig mount 251.

In one implementation, the steering drive mechanism may, for example, comprise: a guide screw 258 and a guide motor 259, wherein the guide screw 258 is vertically disposed, one end of the guide screw 258 is connected to the clamping arm mounting seat 252, the other end of the guide screw 258 is connected to the guide motor 259, the guide motor 259 may be disposed on the top of the reversing carrier 23, but not limited thereto, and the guide motor 259 may also be disposed on the bottom of the reversing carrier 23. The guide screw 258 has the characteristics of high precision, reversibility and high efficiency, so, when the position of the silicon rod clamping piece 253 above needs to be adjusted, the guide screw 258 is driven to rotate by the guide motor 259, and the silicon rod clamping piece 253 is driven to move up and down along the clamp mounting piece 251 in the rotating process of the guide screw 258, for example: the guide motor 259 drives the guide lead screw 258 to rotate forward, so as to drive the upper silicon rod clamping piece 253 to move upwards along the clamp mounting piece 251 so as to be far away from the lower silicon rod clamping piece 253; the guide motor 259 drives the guide screw 258 to rotate in the reverse direction, which drives the upper silicon rod holding part 253 to move downward along the clamp mounting part 251 to approach the lower silicon rod holding part 253. The clamping distance between the two silicon rod clamping members 253 is adjusted, so that the silicon single crystal rods 100 with different specification lengths can be effectively clamped.

In an alternative embodiment, both silicon rod holding members 253 are of a movable design, so that in practical applications, the holding distance between the two silicon rod holding members 253 can be adjusted by moving the two silicon rod holding members 253 of a movable design. Since the silicon rod holders 253 are of a movable design, at least one silicon rod holder 253 of the two silicon rod holders 253 is provided with a guide drive mechanism for driving the two silicon rod holders 253 to move along the clamp mount 251.

In contrast to the former alternative embodiment, in the present alternative embodiment, since both the silicon rod holding members 253 of the silicon rod clamp 25 are movable, there is a case where a guide driving mechanism is provided on either one of the silicon rod holding members 253 of the two silicon rod holding members 253 or both the silicon rod holding members 253 are provided with a guide driving mechanism. Taking the example of providing the guiding driving mechanism for the upper silicon rod clamping member 253 of the two silicon rod clamping members 253, in this case, firstly, the clamping arm mounting seat 252 of the two silicon rod clamping members 253 is movably connected with the clamp mounting member 251, that is, the clamping arm mounting seat 252 and the clamping arm 254 thereon of any one silicon rod clamping member 253 move up and down along the clamp mounting member 251, and in addition, the guiding driving mechanism provided comprises a guiding lead screw 258 and a guiding motor, wherein one end of the guiding lead screw 258 is connected with the clamping arm mounting seat 252 of the upper silicon rod clamping member 253, the other end of the guiding lead screw 258 is connected with the guiding motor 259, the guiding motor 259 can be arranged on the top of the reversing carrier 23, so that when the position of the upper silicon rod clamping member 253 needs to be adjusted, the guiding lead screw 259 drives the guiding lead screw 258 to rotate, and the silicon rod clamping member 253 is driven to move up and down along the clamp mounting member 251 during the rotation of the guiding lead screw, for example: the guide motor 259 drives the guide lead screw 258 to rotate forward, so as to drive the upper silicon rod clamping piece 253 to move upwards along the clamp mounting piece 251 so as to be far away from the lower silicon rod clamping piece 253; the guide motor 259 drives the guide screw 258 to rotate in the reverse direction, which drives the upper silicon rod holding part 253 to move downward along the clamp mounting part 251 to approach the lower silicon rod holding part 253. The silicon rod holding members 253 move up and down along the jig mounting member 251 to adjust a holding distance between the two silicon rod holding members 253, thereby effectively holding the single crystal silicon rods 100 of different specification lengths.

In fact, in the case that the two silicon rod holding members 253 are both movably designed, the guiding driving mechanism can not only adjust the holding distance between the two silicon rod holding members 253 to effectively hold the silicon single crystal rods 100 with different specifications and lengths, but also achieve the purpose of lifting the held silicon single crystal rods 100, and after the silicon single crystal rods are effectively held by the two silicon rod holding members 253, the silicon single crystal rods 100 are lifted by driving the movement of the silicon rod holding members 253. Specifically, still taking the example that the upper silicon rod holding member 253 is provided with the guide driving mechanism, first, the upper silicon rod holding member 253 is moved up and down along the jig mounting member 251 by the guide driving mechanism to adjust the holding distance with the lower silicon rod holding member 253; then, the clamping arm driving mechanism in each silicon rod clamping piece 253 is used for driving the corresponding two clamping arms to clamp the silicon rod smoothly and stably; subsequently, the upper silicon rod holding part 253 is driven by the guide driving mechanism to move upward along the clamp mounting part 251, and at this time, the held single crystal silicon rod 100 and the lower silicon rod holding part 253 move upward together due to the action of friction force, wherein the action of friction force between the upper silicon rod holding part 253 and the single crystal silicon rod 100 is utilized for the upward movement of the held single crystal silicon rod 100, and the action of friction force between the single crystal silicon rod 100 and the lower silicon rod holding part 253 is utilized for the upward movement of the silicon rod holding part 253. The upper silicon rod clamping part 253 drives the single crystal silicon rod 100 to move downwards under the driving of the guiding driving mechanism, and the process is the same as that of the lower silicon rod clamping part 253, and the description is omitted here.

In another modification, for example, a guide driving mechanism is provided in the lower silicon rod holding part 253 of the two silicon rod holding parts 253, and the configuration, arrangement manner and driving operation of the guide driving mechanism are similar to those of the above-described guide driving mechanism of the upper silicon rod holding part 253, and for example, the lower silicon rod holding part 253 moves up and down along the jig mounting part 251 by the driving of the guide driving mechanism to adjust the holding distance with the upper silicon rod holding part 253, and the lower silicon rod holding part 253 moves up and down along the jig mounting part 251 together with the single crystal silicon rod 100 by the driving of the guide driving mechanism. For another example, the two silicon rod clamping members 253 are provided with the guiding driving mechanism, and the arrangement mode and the driving operation mode of the guiding driving mechanism and the movement mode of the two silicon rod clamping members 253 are not described herein again.

In the case of clamping a silicon single crystal rod, which is adapted to different specifications and lengths, by moving the movable silicon rod holding member 253 up and down along the clamp mounting member 251, it is necessary to know the specification and length of the currently clamped silicon single crystal rod, in addition to the movable design of the silicon rod holding member 253, the need for providing a guide driving mechanism for the silicon rod holding member 253, and the like. In view of this, the silicon rod loading and unloading apparatus of the present application may further include a height detector 7 for detecting a height of the vertically placed single crystal silicon rod carried by the silicon rod carrying table 21, thereby serving as a basis for the movable silicon rod holding member 253 to move upward or downward and the moving distance in the subsequent process along the silicon rod clamp mounting member 251.

When the silicon rod clamp 25 in the silicon rod loading and unloading device 2 is used to load the silicon single crystal rod to be processed from the silicon rod loading and unloading region to the pretreatment operation region of the silicon rod processing platform 11 for subsequent processing operation, generally, before the subsequent processing operation is performed on the silicon single crystal rod, it is necessary to know the current flatness condition of the silicon single crystal rod 100. In view of this, the multi-station processing machine for single crystal silicon rods of the present application may further include a flatness detector at least for performing plane flatness detection on the single crystal silicon rod 100 to be processed. In one embodiment, the flatness detecting apparatus is disposed on the second mounting surface of the reversing carrier 23, and specifically includes: the device comprises a contact type detection structure, a detector displacement mechanism and a detection controller.

The contact type detection structure in the flatness detector is used for detecting the flatness of the surface to be detected by contacting the surface to be detected of the single crystal silicon rod. Generally, the contact detection structure for implementing the flatness detection of the surface to be detected by contacting the surface to be detected of the single crystal silicon rod specifically includes: and sequentially contacting each detection point of the surface to be detected of the single crystal silicon rod by the contact detection structure to obtain relative distance values corresponding to each detection point, and judging the flatness of the surface to be detected according to the relative distance values.

In this embodiment, the determining of the flatness of the surface to be measured according to the relative distance values of the detection points is performed by determining a difference between a maximum value and a minimum value of the measured relative distance values, and if the difference is smaller than a standard value or falls within a standard range, it indicates that the flatness of the surface to be measured meets the specification. In a specific implementation, the contact detection structure 61 may further include: a telescopic contact probe and an on-off switch.

The telescopic contact probe is used for contacting the surface to be measured of the monocrystalline silicon rod 100. The on-off switch is associated with the telescopic contact probe and is connected with the detection controller, and is used for sending a corresponding on-off signal to the detection controller as soon as the telescopic contact probe contacts the surface to be detected of the monocrystalline silicon rod 100, so that the detection controller can convert the relative distance between a detection point in the surface to be detected which is currently contacted by the telescopic contact probe and a reference point according to the on-off signal.

In an alternative embodiment, the telescoping contact probe in the contact sensing arrangement may further comprise: the contact type probe comprises a contact type probe, a probe base for arranging the contact type probe, and an elastic supporting piece which is at least partially arranged in the probe base and used for supporting the contact type probe. The contact probe can be, for example, a rod shaped like a cylinder, the tip of the rod can be pointed and rounded or additionally provided with a plurality of protruding points, and in practical application, the contact probe can be made of hard alloy with high hardness and high wear resistance. The probe base can be, for example, a cylindrical table, which is a hollow structure and can accommodate a contact probe in the form of a rod. When the probe base is used for accommodating the contact probe, the top end of the contact probe protrudes out of the probe base. The elastic support is arranged in the probe base and used for supporting the contact type probe, and the elastic support is also associated with the on-off switch. The elastic support shoring contact type probe mainly realizes force transmission, wherein the force transmission is at least embodied in the following two aspects: the method comprises the steps of firstly, receiving the pressure of a contact probe which is applied due to the contact of the contact probe with a surface to be detected, and conducting the pressure to an on-off switch so that the on-off switch can generate corresponding on-off signals according to the pressure. And secondly, restoring force for restoring the contact probe is provided, the receiving contact probe contracts inwards relative to the probe base due to the contact with the surface to be detected, and the elastic support part provides the restoring force for restoring the contact probe according to the force action after being stressed, so that the contact probe moves outwards relative to the probe base according to the restoring force to restore the original state. In practical applications, the elastic support may be, for example, a pressure spring, and opposite ends of the pressure spring may correspond to the contact probe and the on-off switch, respectively. However, the constituent elements of the contact type detecting structure and the structures of the respective constituent elements are not limited to the foregoing embodiments,

in other embodiments, the contact detection structure may be modified in other ways, such as: the contact probe may, for example, be a bar in the shape of a tetrahedron, while the probe base may, for example, also be a tubular table in the shape of a tetrahedron. The elastic supporting piece can also adopt a flexible elastic sheet, and the two opposite ends of the flexible elastic sheet can respectively correspond to the contact type probe and the on-off switch. The on-off switch is a high-precision switch, has high sensitivity, and can sense even very fine acting force. In addition, in other implementation manners of this optional embodiment, a signal transmission device or a signal transmission circuit may be further included between the on-off switch and the detection controller, so that the on-off signal generated by the on-off switch may be transmitted to the detection controller through the signal transmission device or the signal transmission circuit.

In practical application, when the telescopic contact probe contacts with the surface to be detected of the single crystal silicon rod 100, the telescopic contact probe retracts relative to the probe base under the blocking of the surface to be detected of the single crystal silicon rod 100, the elastic support supports the contact probe to receive the abutting force of the contact probe and transmit the abutting force to the on-off switch, so that the on-off switch generates a corresponding on signal or off signal according to the abutting force, the on signal or off signal is transmitted to the detection controller through the signal transmission device or the signal transmission circuit, and the detection controller can convert the relative distance between the detection point in the surface to be detected, which is currently contacted by the contact probe, and the reference point according to the on signal or off signal.

The detector displacement mechanism in the flatness detector is used to drive the contact-type detection structure 61 to displace. In this embodiment, the displacement mechanism of the detector may be, for example, a three-dimensional displacement mechanism, and in a specific implementation, the three-dimensional displacement mechanism may include: for convenience of description, the first direction is denoted as an X-axis, the second direction is denoted as a Y-axis, and the third direction is denoted as a Z-axis. As can be seen from fig. 1, the second direction Y axis is the same as the translation direction of the translation mechanism in the silicon rod handling device, and therefore, in an alternative embodiment, the second direction shift mechanism may be coincident with the translation mechanism, i.e., the second direction shift mechanism is the same as the translation mechanism, and the structure and the operation manner of the translation mechanism can be referred to the above description, and thus the second direction shift mechanism will not be described again.

The following description focuses on the first-direction displacement mechanism and the third-direction displacement mechanism in detail.

The first direction shift mechanism further includes: a side-shifting base 243 and a first direction shifting unit by which the shifting of the side-shifting base 243 in a first direction (e.g., X-axis direction) can be provided. The first direction shift unit further includes: the first direction rack is arranged on the bottom mounting structure along the first direction; a first rotation gear provided on the side shift base 243 and engaged with the first direction rack; and a first driving motor for driving the first rotation gear to rotate so as to advance and retreat the side-to-side base 243 along the first direction rack. In particular, the first direction rack may, for example, be at least one rack having a length, the at least one rack being mounted on the bottom mounting structure. To allow side-shifting base 243 to move more smoothly in the first direction, at least two first rotation gears may be provided for each rack, with the at least two first rotation gears being spaced apart. The first rotating gear can be in transmission connection with a first driving motor through a transmission shaft, and the first driving motor is connected with the detection controller and is controlled by the detection controller. The first drive motor may be, for example, a servo motor. In practical application, as mentioned above, the first direction shifting unit includes the first direction rack, the first rotating gear, and the first driving motor receives the shifting control command from the detection controller, and drives the first rotating gear to rotate according to the shifting control command, so that the side shifting base 243 shifts along the first direction rack until the requirement of the shifting value is met, thereby achieving the purpose of precise shifting. The shift control instruction at least comprises a shift value or a parameter related to the shift value.

In addition, the first direction shift unit is only an example and is not intended to limit the present disclosure, for example, in an alternative embodiment, the first direction shift unit may include: lead screw and servo motor, lead screw have high accuracy, reversibility and efficient characteristics, so, through the cooperation of servo motor with the lead screw, improve the precision that base 243 is moved to the side in the level of first direction and march. In addition, the first direction shifting unit may further include a first direction guide rail and a first slider, wherein the first direction guide rail is disposed on the bottom mounting structure along the first direction, the first slider is disposed on the side shifting base 243 and is matched with the first direction guide rail, and the auxiliary side shifting base 243 shifts along the first direction through the matching of the first direction guide rail and the first slider.

In practical applications, the first driving motor receives a displacement control command (the displacement control command includes at least a displacement value or a parameter related to the displacement value) from the detection controller and drives the first rotating gear to rotate according to the displacement control command so as to displace the side-shifting base 243 along the first direction rack, the displacement control command includes at least the displacement value or the parameter related to the displacement value, and meanwhile, the first direction rack and the first slider as auxiliary facilities slide along the first direction rack, so that the side-shifting base 243 is displaced along the first direction.

Alternatively, in other embodiments, the first direction shifting unit may further include a first direction rail disposed on the side shifting base 243 in the first direction, and a first slider mounted on the bottom mounting structure, and the auxiliary side shifting base 243 is shifted in the first direction by cooperation of the first direction rail and the first slider. As described above, the flatness detecting apparatus is used for detecting the surface flatness of the silicon single crystal rod, and therefore, in general, the flatness detecting apparatus can be used in combination with other processing equipment, such as a single-function processing equipment (e.g., a cutting machine, a grinding machine, or a polishing machine) or a multi-function processing equipment, such as a cutting machine, a grinding machine, or a polishing machine, and the multi-function processing equipment can be, for example, a grinding and polishing machine.

In one embodiment, the second direction shift mechanism is also used as the above-described translation mechanism, and therefore, in order to cooperate with the first direction translation mechanism, the configuration of the translation mechanism in which the conversion chassis 241 is mounted on the bottom mounting structure via the translation mechanism is substantially the same as that in which the conversion chassis 241 is mounted on the side shift base of the first direction shift mechanism via the translation mechanism will be described in particular here.

The third direction displacement mechanism may provide for displacement of the contact detection structure 61 relative to the commutating carrier 23 in a third direction (e.g., the Z-axis direction, which may also be referred to herein colloquially as an up-down displacement for displacement in the third direction). In one embodiment, the contact detection structure 61 is disposed on the reversing carrier 23 by a detection structure mounting member 63. The detection structure mounting part 63 can adopt a guide column structure, and the contact detection structure adopts a movable block structure sleeved on the guide column structure. Specifically, the guiding post structure as the detecting structure mounting part 63 includes two guiding posts vertically arranged and parallel to each other, and the contact detecting structure 61 is provided with two through holes or two clips corresponding to the two guiding posts in the guiding post structure.

If a through hole is adopted, the contact type detection structure is sleeved on the guide post and can slide along the guide post. If a clip is adopted, the contact type detection structure is clipped on the guide post and can realize sliding along the guide post, wherein the clip can be clipped on at least one half part of the guide post. Accordingly, to achieve the up-and-down displacement of the contact detection structure 61 along the detection structure mounting member 63, the third direction displacement mechanism may further comprise: the reversing device comprises a screw rod and a lifting motor, wherein the screw rod is vertically arranged, one end of the screw rod is connected to the contact type detection structure 61, the other end of the screw rod is connected to the lifting motor, the lifting motor can be arranged at the top of the reversing carrier 23, but not limited to this, and the lifting motor can also be arranged at the bottom of the reversing carrier 23. The lead screw has high accuracy, reversibility and efficient characteristics, so, when the position of contact detection structure 61 is adjusted to needs, it is rotatory by elevator motor drive lead screw, and the lead screw rotation in-process drives contact detection structure 61 along detecting structural mounting part 63 up-and-down motion, for example: the driving motor drives the screw rod to rotate positively, so as to drive the contact type detection structure 61 above to move upwards along the detection structure mounting part 63; the driving motor drives the lead screw to rotate reversely, and then drives the contact type detecting structure 61 to move downwards along the detecting structure mounting part 63.

In practical application, the lifting motor receives a displacement control command which at least comprises a displacement numerical value or a parameter related to the displacement numerical value and is sent by the detection controller, and drives the screw rod to rotate according to the displacement control command so as to drive the contact type detection structure 61 to move up and down along the detection structure mounting part 63 until the requirement of the displacement numerical value is met, so that the purpose of accurate displacement is realized. It should be noted that the third direction shift mechanism is only an example of a combination of a screw and a driving motor, and is not limited to the third direction shift mechanism of the present application, and alternatively, in other embodiments, the third direction shift mechanism may also be a toothed belt shift mechanism, and the toothed belt shift mechanism may include a synchronous toothed belt, a rotating gear, and a driving motor, wherein the synchronous toothed belt is disposed on the second mounting surface of the reversing carrier 23, the contact detection structure 61 may be connected to the synchronous toothed belt through a connecting member, the rotating gear is engaged with the synchronous toothed belt, and the driving motor is configured to drive the rotating gear to rotate so as to drive the contact detection structure 61 to move up and down along the detection structure mounting member 63 through the synchronous toothed belt.

The detection controller is connected with the contact type detection structure and the detector shifting mechanism and is used for controlling the detector shifting mechanism to drive the contact type detection structure to shift and controlling the contact type detection structure to sequentially detect the relative distance of each detection point on the surface to be detected in the single crystal silicon rod. In one embodiment, the detector shift mechanism may include a first direction shift mechanism, a second direction shift mechanism, and a third direction shift mechanism, and thus, the detection controller may send corresponding shift control commands to the first direction shift mechanism, the second direction shift mechanism, and the third direction shift mechanism, respectively, to drive and control the contact type detection structure to reach a predetermined detection position through three-dimensional shift and to be brought into contact with a detection point in the surface to be detected of the single crystal silicon rod 100 at the detection position. The contact detection structure may include: the device comprises a telescopic contact probe and an on-off switch, wherein the on-off switch is connected with a detection controller, the on-off switch sends an on-off signal to the detection controller when the telescopic contact probe contacts with a surface to be detected of the monocrystalline silicon rod 100, and the detection controller converts the relative distance between a detection point in the surface to be detected, which is currently contacted by the contact probe, and a reference point according to the on-off signal.

In one embodiment, the flatness detector is disposed on the second mounting surface of the reversing carrier 23, and the silicon rod clamp is disposed on the first mounting surface of the reversing carrier 23, where the first mounting surface and the second mounting surface can be set according to the actual device structure. For example, the first mounting surface and the second mounting surface are two mounting surfaces arranged oppositely in the reversing carrier 23, further, the first mounting surface and the second mounting surface can be different by 180 degrees, in this way, the silicon rod carrier 21 located at the silicon rod loading and unloading section is connected in line with the rotary carrier 531 located at the pretreatment operation section in the silicon rod transfer device 5, so that, after the reversing carrier 23 is rotated by 180 degrees, the original first mounting surface can be switched to the second mounting surface or the original second mounting surface can be switched to the first mounting surface, in practice, however, the first mounting surface and the second mounting surface may differ by, for example, 90 °, or even the first mounting surface and the second mounting surface may differ by any position within a suitable range, provided that no unnecessary interference is ensured between the first mounting surface and the second mounting surface or between the silicon rod carrier 21 located in the silicon rod loading and unloading zone and the rotary carrier 531 located in the pretreatment operation zone in the silicon rod transfer device 5. In addition, the height detecting instrument 7 mentioned above may be disposed on the first mounting surface, the second mounting surface, or even other portions of the reversing carrier 23.

Particularly, the alignment correction work of the single crystal silicon rod 100 can be also performed by the cooperation of the flatness detector 7 and the silicon rod clamp 25. As can be seen from the foregoing description, the silicon rod 100 is held by the silicon rod holder 25 and then transferred to the rotary stage 531 of the silicon rod positioning mechanism 53 at the pretreatment operation area after being reversed by the reversing carrier 23. However, as such, the following situation may occur: the rotary susceptor 531 is not located in the central region of the single crystal silicon rod 100. In this case, the single crystal silicon rod product after the subsequent processing operation is likely to fail the specification of the workpiece. Therefore, before the subsequent processing operation is performed on the silicon single crystal rod, the deviation rectifying operation may be performed on the silicon single crystal rod 100, and in the deviation rectifying operation, the center of the silicon single crystal rod 100 is aligned with the center of the rotary bearing platform 531 in an easy-to-operate and ideal manner.

In practical application, the flatness detector 7 performs plane flatness detection on the single crystal silicon rod 100 carried on the rotary carrying table 531, so as to obtain an overall position overview of the single crystal silicon rod 100; comparing and analyzing the obtained overall position overview of the single crystal silicon rod 100 with the position of the rotary bearing table 531, and further obtaining deviation information between the center of the single crystal silicon rod 100 and the center of the rotary bearing table 531; the reversing carrier 23 rotates 180 degrees to do reversing movement, and the silicon rod clamp 25 on the reversing carrier 23 corresponds to the single crystal silicon rod 100 on the rotary bearing platform 531 and clamps the single crystal silicon rod 100; the first direction shifting mechanism and the second direction shifting mechanism in the three-dimensional shifting mechanism are used for driving the reversing carrier 23 to move in the first direction and/or the second direction, so that the silicon rod clamp 25 and the single crystal silicon rod 100 clamped by the silicon rod clamp 25 are driven to perform position adjustment relative to the rotary bearing table 531, finally, the center of the single crystal silicon rod 100 and the center of the rotary bearing table 531 are correspondingly overlapped, and the deviation rectifying operation for the single crystal silicon rod 100 is completed.

The circle cutting and rough grinding device 3 is disposed in the first operation area of the silicon rod processing platform 11, and is configured to perform circle cutting and rough grinding operations on the single crystal silicon rod 100. The rounding and finish grinding device 4 is disposed in the second operation area of the silicon rod processing platform 11, and is configured to perform rounding and finish grinding operations on the single crystal silicon rod 100 after the rounding and finish grinding operations of the rounding and finish grinding device 3. In the present embodiment, since the silicon rod positioning mechanism 53 can position the silicon single crystal rod 100 in the upright position as described above, the vertical processing method is adopted in which the rounding and rough grinding device 3 performs the rounding and rough grinding operation on the upright silicon single crystal rod 100 and the rounding and finish grinding device 4 performs the rounding and finish grinding operation on the upright silicon single crystal rod 100.

In particular, in an embodiment, a protective door may be further disposed between the pretreatment operation area and the first operation area and between the second operation area and the pretreatment operation area to isolate the pretreatment operation area from the first operation area and the second operation area, so as to protect the single crystal silicon rod and prevent the single crystal silicon rod from being contaminated or damaged.

The circle cutting and rough grinding device 3 is arranged on the machine base 1 and is positioned in a first operation area of the silicon rod processing platform, and is used for performing circle cutting and rough grinding operations on the single crystal silicon rod 100. The circle and rough grinding apparatus 3 has a first receiving space for receiving the single crystal silicon rod 100 transferred through the transfer body 51 in the silicon rod transfer apparatus 5. The circle and rough grinding device 3 mainly comprises a first frame 31 and at least one pair of first grinding tools 33, wherein the at least one pair of first grinding tools 33 are oppositely arranged on the first frame 31 and are used for performing circle and rough grinding operations on the single crystal silicon rod 100 on the silicon rod conversion device 5 at the first operation area. Further, each first grinding tool 33 further includes a first main shaft 32 and a first grinding wheel 34, wherein the mounting surfaces of the first main shaft 32 and the first frame 31 are provided with a transverse sliding guide mechanism and a longitudinal sliding guide mechanism, the transverse sliding guide mechanism can adopt a combination of a slide rail and a slide block, for example, and the longitudinal sliding guide mechanism can adopt a combination of a slide rail and a slide block, for example. The first main shaft 32 or the first grinding wheel 34 can be moved forward and backward laterally with respect to the first frame 31 by the laterally sliding guide mechanism. The first main shaft 32 can be moved up and down longitudinally with respect to the first frame 31 by a longitudinal sliding guide mechanism.

In a practical application, at least one pair of first grinding tools 33 are disposed on a grinding tool base, the grinding tool base is longitudinally slidably connected to the first frame 31 through a longitudinal sliding guide mechanism, at least one pair of first grinding tools 33 is transversely slidably connected to the grinding tool base through a transverse sliding guide mechanism, wherein the grinding tool base is controlled by a lifting motor and the longitudinal sliding guide mechanism longitudinally slides on the first frame 31, and each first grinding tool 33 of the at least one pair of first grinding tools 33 is independently controlled by a moving motor and transversely slides on the grinding tool base. A first grinding wheel 34 is disposed at the working end of the first spindle 32 and has first abrasive particles of a first grit size. Here, the single crystal silicon rod 100 to be processed is a silicon cube having a substantially rectangular-like cross section, and has four side surfaces, and a connecting edge surface having an R-angle is formed between two adjacent side surfaces. Therefore, the pair of first grinding tools 33 in the circle and rough grinding device 3 are disposed opposite to each other with a first receiving space therebetween for receiving the single crystal silicon rod 100, and after the single crystal silicon rod 100 is conveyed into the first receiving space between the pair of first grinding wheels 34, the first grinding wheels 34 can contact a pair of opposite side surfaces or a pair of connecting edge surfaces of the single crystal silicon rod 100 for performing corresponding processing operations.

In practical applications, the silicon rod transfer device 5 is used to transfer the silicon single crystal rod 100 to the first operation area of the silicon rod processing platform, the silicon rod positioning mechanism 53 is used to position and adjust the silicon single crystal rod 100, so that a pair of connecting edge surfaces in the silicon single crystal rod 100 corresponds to a pair of first grinding tools 33, and the first grinding tools 33 are used to perform rounding processing operations on the connecting edge surfaces of the silicon single crystal rod 100. The rounding process may include, for example: in cooperation with the positioning adjustment of the silicon rod 100 by the silicon rod positioning mechanism 53, the first grinding wheel 34 in the first grinding tool 33 is rotated and the first grinding tool 33 is driven to move up and down to grind, and the first pair of connecting lands and the adjacent regions thereof are roughly cut a plurality of times and the second pair of connecting lands and the adjacent regions thereof are roughly cut a plurality of times according to the feeding amount, so that the connection between each connecting land and the adjacent side surface forms a preliminary arc-shaped connection. The silicon rod positioning mechanism 53 positions and adjusts the single crystal silicon rod 100 so that a pair of side surfaces of the single crystal silicon rod 100 correspond to the pair of first grinders 33, and the first grinders 33 perform rough grinding operation on the side surfaces of the single crystal silicon rod 100.

The rough grinding operation may be, for example: positioning and adjusting the single crystal silicon rod 100 by the silicon rod positioning mechanism 53 so that the first pair of side surfaces of the single crystal silicon rod 100 correspond to the pair of first grinding tools 33, and performing rough grinding operation on the first pair of side surfaces of the single crystal silicon rod 100 by the first grinding wheel 34 in the pair of first grinding tools 33; subsequently, the silicon rod positioning mechanism 53 performs positioning adjustment on the single crystal silicon rod 100, so that the second opposite side surfaces of the single crystal silicon rod 100 correspond to the pair of first grinding tools 33, and the first grinding wheels 34 in the pair of first grinding tools 33 perform rough grinding operation on the second opposite side surfaces of the single crystal silicon rod 100. The rough grinding operation for any pair of side surfaces may include, for example: providing a feeding amount, driving a first grinding wheel 34 in a pair of first grinding tools 33 to move from top to bottom to grind a pair of side surfaces of the single crystal silicon rod 100; after grinding to the bottom of the single crystal silicon rod 100, the pair of first grinding wheels 34 pass through the single crystal silicon rod 100 and then stay at the lower limit, and then the feeding amount is increased to drive the pair of first grinding wheels 34 to move from bottom to top to grind the single crystal silicon rod 100; the pair of first grinding wheels 34 are ground to the top of the single crystal silicon rod 100 and then stay at the upper limit position after penetrating through the single crystal silicon rod 100, the feeding amount is continuously increased, and the pair of first grinding wheels 34 are driven to move from top to bottom to grind the single crystal silicon rod 100; thus, after grinding, increasing the feed amount, reverse grinding, and increasing the feed amount, and repeating the grinding for several times, a pair of side surfaces of the single crystal silicon rod 100 can be ground to a predetermined size.

The rounding and finish grinding device is arranged on the machine base 1 and is positioned in a second operation area of the silicon rod processing platform, and is used for performing rounding and finish grinding processing operation on the single crystal silicon rod 100 after the rounding and finish grinding processing operation. The rounding and fine grinding apparatus 4 has a second receiving space for receiving the single crystal silicon rod 100 conveyed by the conveying body 51 in the silicon rod transfer apparatus 5. The rounding and finish grinding device 4 mainly comprises a second frame 41 and at least one pair of second grinding tools 43, wherein the at least one pair of second grinding tools 43 is oppositely arranged on the second frame 41 and is used for rounding and finish grinding the monocrystalline silicon rod 100 on the silicon rod conversion device 5 at the second operation area.

Further, each second grinding tool 43 further includes a second main shaft 42 and a second grinding wheel 44, wherein the mounting surface of the second main shaft 42 and the second frame 41 is provided with a transverse sliding guide mechanism and a longitudinal sliding guide mechanism, the transverse sliding guide mechanism can adopt a combination of a slide rail and a slide block, for example, and the longitudinal sliding guide mechanism can adopt a combination of a slide rail and a slide block, for example. The second main shaft 42 or the second grinding wheel 44 can be moved forward and backward in the lateral direction with respect to the second frame 41 by the lateral sliding guide mechanism, and the second main shaft 42 can be moved up and down in the longitudinal direction with respect to the second frame 41 by the longitudinal sliding guide mechanism.

In a practical application, at least one pair of second grinding tools 43 is disposed on a grinding tool base, the grinding tool base is longitudinally slidably connected to the second frame 41 through a longitudinal sliding guide mechanism, at least one pair of second grinding tools 43 is transversely slidably connected to the grinding tool base through a transverse sliding guide mechanism, wherein the grinding tool base is controlled by a lifting motor and the longitudinal sliding guide mechanism longitudinally slides on the second frame 41, and each second grinding tool 43 of the at least one pair of second grinding tools 43 is independently controlled by a moving motor and transversely slides on the grinding tool base. A second grinding wheel 44 is disposed at the working end of the second spindle 42 and has second abrasive particles of a second grit size. In contrast, the second abrasive grains in the second grinding wheel 44 are smaller in size than the first abrasive grains in the first grinding wheel 34 in the round-cutting and rough-grinding apparatus 3. Therefore, the pair of second grinding tools 43 in the rounding and finish grinding device 4 are arranged oppositely, a second accommodating space for accommodating the single crystal silicon rod 100 is reserved between the pair of second grinding wheels 44, and after the single crystal silicon rod 100 is conveyed to the second accommodating space, the second grinding wheels 44 can contact the single crystal silicon rod 100 for corresponding processing operation.

In practical applications, the silicon rod transfer device 5 is used to transfer the silicon single crystal rod 100 to the second operation area of the silicon rod processing platform, the silicon rod positioning mechanism 53 is used to position the silicon single crystal rod 100 and rotate the silicon single crystal rod 100, and the second grinding tool 43 is used to perform a rounding operation on the connecting edge surface of the silicon single crystal rod 100. The rounding process may include, for example: positioning the single crystal silicon rod 100 by the silicon rod positioning mechanism 53, so that a pair of second grinding wheels 44 in the second grinding tool 43 is right opposite to the side surface of the single crystal silicon rod 100, wherein the distance between the pair of second grinding wheels 44 is smaller than the current diagonal distance of the single crystal silicon rod 100, and the difference between the two distances is the feeding amount of the at least one pair of second grinding wheels 44; the silicon single crystal rod 100 is driven to rotate in the second accommodating space by the silicon rod positioning mechanism 53, the pair of second grinding wheels 44 grind a pair of connecting edge surfaces corresponding to a pair of chamfers of the cross section of the rotating silicon single crystal rod 100 into an arc shape, wherein the rotation speed of the silicon single crystal rod 100 is slow when the silicon single crystal rod 100 is ground by the second grinding wheels 44, the rotation speed of the silicon single crystal rod 100 is fast after the silicon single crystal rod 100 passes through the second grinding wheels 44 after the connecting edge surfaces are ground by the second grinding wheels 44, and the silicon single crystal rod 100 continues to rotate, so that the other pair of connecting edge surfaces corresponding to the other pair of chamfers contact with the second grinding wheels 44 and are ground into an arc shape by; continuing to move the second grinding wheels 44 downwards, and grinding and rounding each connecting edge surface of the next section of the single crystal silicon rod 100 as in the previous step until the grinding and rounding reaches the bottom of the single crystal silicon rod 100, so as to finish the grinding and rounding of the single connecting edge surface of the single crystal silicon rod 100; continuously increasing a feeding amount, driving a pair of second grinding wheels 44 to move from bottom to top, and grinding each connecting edge surface of the single crystal silicon rod 100 by the second grinding wheels 44; in this way, the feeding amount is increased by grinding, and the feeding amount is increased by reverse grinding, and after several times of grinding, the connecting edge surface of the single crystal silicon rod 100 can be ground to a preset size and rounded integrally, that is, the connecting edge surface and the side surface are in smooth transition.

The silicon rod positioning mechanism 53 positions and adjusts the silicon single crystal rod 100 so that a pair of side surfaces of the silicon single crystal rod 100 correspond to the pair of second grinders 43, and the second grinders 43 perform finish grinding operation on the side surfaces of the silicon single crystal rod 100. The finish grinding operation may be, for example: positioning and adjusting the single crystal silicon rod 100 by the silicon rod positioning mechanism 53 so that the first pair of side surfaces of the single crystal silicon rod 100 correspond to the pair of second grinding tools 43, and performing finish grinding operation on the first pair of side surfaces of the single crystal silicon rod 100 by the second grinding wheels 44 in the pair of second grinding tools 43; subsequently, the silicon rod positioning mechanism 53 positions and adjusts the silicon single crystal rod 100 so that the second opposite side surfaces of the silicon single crystal rod 100 correspond to the pair of second grinding tools 43, and the second opposite side surfaces of the silicon single crystal rod 100 are subjected to finish grinding by the second grinding wheels 44 of the pair of second grinding tools 43. Wherein, the fine grinding operation of any pair of side surfaces can comprise: providing a feeding amount, driving the second grinding wheel 44 of the pair of second grinding tools 43 to move from top to bottom to grind a pair of side surfaces of the single crystal silicon rod 100; the pair of second grinding wheels 44 are ground to the bottom of the single crystal silicon rod 100, pass through the single crystal silicon rod and then stay at the lower limit, a feeding amount is increased, and the pair of second grinding wheels 44 are driven to move from bottom to top to grind the single crystal silicon rod; the pair of second grinding wheels 44 are ground to the top of the single crystal silicon rod 100, pass through the single crystal silicon rod 100 and then stay at the upper limit position, the feeding amount is continuously increased, and the pair of second grinding wheels 44 are driven to move from top to bottom to grind the single crystal silicon rod 100; thus, after grinding, increasing the feed amount, reverse grinding, and increasing the feed amount, and repeating the grinding for several times, a pair of side surfaces of the single crystal silicon rod 100 can be ground to a predetermined size.

As is apparent from the above description, in an alternative embodiment, the rounding and finish grinding operation performed on the silicon single crystal rod 100 by the rounding and finish grinding apparatus 4 serving as the rounding and finish grinding apparatus employs a grinding process in which the edge surface is ground first and then the side surface is ground, but this is not limitative, and in other modified embodiments, the rounding and finish grinding operation performed on the silicon single crystal rod 100 by the rounding and finish grinding apparatus 4 may employ a grinding process in which the edge surface is ground first and then the edge surface is ground, and the same technical effects should be achieved.

Subsequently, after the single crystal silicon rod 100 is processed by the circle cutting and rough grinding device 3 and the circle rolling and fine grinding device 4, the silicon rod transfer device 5 transfers the single crystal silicon rod 100 from the second operation area to the pretreatment operation area, and the silicon rod handling device unloads the processed single crystal silicon rod 100 from the pretreatment operation area of the silicon rod processing platform. Of course, before unloading single crystal silicon rod 100, if necessary, in the pretreatment operation area, the flatness detector may still perform a plane flatness detection of single crystal silicon rod 100 after the processing operation. By using the flatness detector, on one hand, whether the single crystal silicon rod 100 meets the product requirements after each processing operation can be detected by detecting the plane flatness of the single crystal silicon rod 100, so as to determine the effect of each processing operation; on the other hand, the wear condition of processing parts in each processing device can be indirectly obtained through detecting the plane flatness of the single crystal silicon rod 100, so that the real-time calibration or correction, even the maintenance or replacement is facilitated.

This application single crystal silicon rod multistation processing machine has assembleed a plurality of processingequipment, and usable silicon rod handling device can load and unload single crystal silicon rod fast, steadily and not damaged ground, utilizes silicon rod conversion equipment can shift the single crystal silicon rod orderly and seamlessly between each processingequipment and automatic realize a plurality of process operations of single crystal silicon rod processing, and a plurality of processingequipment can carry out corresponding processing operation to corresponding single crystal silicon rod simultaneously, improves the quality of production efficiency and product processing operation.

The application also discloses a multi-station processing method of the single crystal silicon rod, which is used for carrying out multi-station processing operation on the single crystal silicon rod. Fig. 7 is a schematic flow chart of a multi-station processing method of a single crystal silicon rod according to an embodiment of the present disclosure, wherein the multi-station processing method of a single crystal silicon rod is applied to a multi-station processing machine of a single crystal silicon rod having a rounding and rough grinding device. As shown in fig. 7, the multi-station processing method of the single crystal silicon rod of the present application includes the following steps:

and step S11, placing the silicon single crystal rod to be processed in the operation area of the circle cutting and rough grinding device.

Step S13, the circle-cutting and rough-grinding device performs a circle-cutting operation on the first pair and the second pair of connecting edges of the single crystal silicon rod and a rough-grinding operation on the first pair and the second pair of side surfaces of the single crystal silicon rod, respectively.

Please refer to fig. 8, which is a flowchart illustrating a detailed process of fig. 7 in an alternative embodiment. As shown in fig. 8, step S13 may further include: step S13A, the circle-cutting and rough-grinding device performs a circle-cutting operation on the first pair and the second pair of connecting edges of the single crystal silicon rod. Step S13B, the circle-cutting and rough-grinding device performs rough-grinding operation on the first pair and the second pair of side surfaces of the single crystal silicon rod.

Please refer to fig. 9, which is a flowchart illustrating a detailed process of fig. 7 in another alternative embodiment. As shown in fig. 9, step S13 may further include: step S13a, the circle-cutting and rough-grinding device performs rough-grinding operation on the first pair and the second pair of side surfaces of the single crystal silicon rod. Step S13b, the circle-cutting and rough-grinding device performs a circle-cutting operation on the first pair and the second pair of connecting edges of the single crystal silicon rod.

The rounding and rough grinding device for rounding the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod comprises: and enabling the circle cutting and rough grinding device to respectively perform rough cutting operation for at least three times on the first pair of connecting edge surfaces and the second pair of connecting edge surfaces of the single crystal silicon rod. Further, the roughly cutting and grinding device for roughly cutting one of the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod for at least three times comprises the following steps: rotating a pair of connecting edges in the single crystal silicon rod to an initial rough cutting position to correspond to a pair of first grinding tools in the circle and rough grinding device; carrying out primary rough cutting operation on a pair of connecting edge surfaces in the single crystal silicon rod by using a first grinding tool; the single crystal silicon rod is positively rotated by a first deflection angle relative to the initial rough cutting position, and the first grinding tool is used for carrying out secondary rough cutting operation on the first pair of connecting edge surfaces; and reversely rotating the single crystal silicon rod by a second deflection angle relative to the initial rough cutting position, and carrying out the third rough cutting operation on the pair of connecting edge surfaces in the single crystal silicon rod by the first grinding tool. Optionally, the first deflection angle is in the range of 3 ° to 7 °, and the second deflection angle is in the range of 3 ° to 7 °.

The circle cutting and rough grinding device for roughly grinding one of the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod comprises the following steps: rotating a pair of side surfaces in the single crystal silicon rod to an initial rough grinding position to correspond to a pair of first grinding tools; and enabling the first grinding tool to perform rough grinding operation on the pair of side surfaces.

When the single crystal silicon rod multi-station processing machine further comprises a rounding and fine grinding device, the single crystal silicon rod multi-station processing method is further used for rounding and fine grinding the single crystal silicon rod. Fig. 10 is a schematic flow chart illustrating a multi-station processing method of a single crystal silicon rod according to another embodiment of the present application. As shown in fig. 10, the multi-station processing method of the single crystal silicon rod of the present application includes the following steps:

And step S15, placing the silicon single crystal rod to be processed in the operation area of the rounding and fine grinding device.

And step S17, enabling the rounding and fine grinding devices to respectively carry out rounding operation on the connecting edge surface of the silicon single crystal rod and carry out fine grinding operation on the first pair of side surfaces and the second pair of side surfaces of the silicon single crystal rod.

Please refer to fig. 11, which is a flowchart illustrating a detailed process of fig. 10 in an alternative embodiment. As shown in fig. 12, step S17 may further include: and step S17A, enabling the rounding and fine grinding device to carry out rounding operation on the connecting edge surface of the silicon single crystal rod. Step S17B, the rounding and fine grinding device respectively carries out fine grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod.

Please refer to fig. 12, which is a flowchart illustrating a detailed process of fig. 10 in another alternative embodiment. As shown in fig. 9, step S13 may further include: step S17a, the rounding and fine grinding device respectively carries out fine grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod. And step S17b, enabling the rounding and fine grinding device to carry out rounding operation on the connecting edge surface of the silicon single crystal rod.

The rounding and fine grinding device for rounding the connecting edge surface of the silicon single crystal rod comprises the following steps: adjusting the grinding distance of a pair of second grinding tools in the rounding and fine grinding device; and rotating the single crystal silicon rod, and enabling the second grinding tool to perform rounding operation on the connecting edge surface of the single crystal silicon rod.

The step of enabling the rounding and fine grinding device to perform fine grinding operation on one of the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod comprises the following steps: rotating a pair of side surfaces in the single crystal silicon rod to an initial finish grinding position to correspond to a pair of second grinding tools; and enabling the second grinding tool to carry out fine grinding operation on a pair of side surfaces in the single crystal silicon rod.

Fig. 13 is a schematic flow chart illustrating a multi-station processing method of a single crystal silicon rod according to another embodiment of the present application. As shown in fig. 13, the multi-station processing method of the single crystal silicon rod of the present application includes the following steps:

and step S10, performing deviation rectifying operation on the silicon single crystal rod to be processed.

The multi-station processing method for the silicon single crystal rod can be used for carrying out multi-station processing operation comprising circle cutting and rough grinding operation on the silicon single crystal rod, and can improve the quality of the processing operation of the silicon single crystal rod.

In addition, according to the multi-station processing method for the silicon single crystal rod, the silicon rod can be quickly, stably and nondestructively assembled and disassembled by the silicon rod assembling and disassembling device, the silicon rod can be orderly and seamlessly transferred among the processing devices by the silicon rod conversion device, a plurality of working procedures for processing the silicon rod are automatically realized, the corresponding processing operation can be simultaneously performed on the corresponding silicon rod by the plurality of processing devices, and the production efficiency and the quality of the product processing operation are improved.

The multi-station silicon rod processing machine of the present application will be described in detail below with reference to fig. 14 to 28, in which the multi-station silicon rod processing operation is performed in some examples. In the following examples, the silicon single crystal rod to be processed is a silicon cube with a substantially rectangular-like cross section, and has four side surfaces, and a connecting edge surface with an R-shaped angle is formed between two adjacent side surfaces; the polycrystalline silicon rod to be processed is a silicon cube with a rectangular cross section and is provided with four side faces and four edges. The adopted multi-station processing machine for the silicon single crystal rod comprises a silicon rod processing platform, a silicon rod loading and unloading device, a circle cutting and coarse grinding device, a circle rolling and fine grinding device and a silicon rod conversion device, and of course, the multi-station processing machine for the silicon single crystal rod can also comprise a height detector, a flatness detector and the like. In addition, a pretreatment operation area, a first operation area and a second operation area are arranged on the silicon rod processing platform, the pretreatment operation area, the first operation area and the second operation area are sequentially arranged according to the working procedures of silicon rod processing operation, correspondingly, the silicon rod conversion device is also provided with three silicon rod positioning mechanisms, wherein the pretreatment operation area, the first operation area and the second operation area are distributed at 120 degrees, and therefore the three silicon rod positioning mechanisms are also distributed at 120 degrees between every two silicon rod positioning mechanisms. Here, it is assumed that the direction in the order of the preprocessing work area, the first work area, and the second work area is a forward direction, and the direction in the order opposite to the forward direction is a reverse direction.

Step 1, a first silicon rod to be processed is placed on a workpiece bearing table of a silicon rod handling device. In the present embodiment, the first single crystal silicon rod 101 is vertically placed on the silicon rod carrier 21, and the operation of placing the first single crystal silicon rod 101 on the silicon rod carrier 21 in the silicon rod loading and unloading region can be performed by manual operation or by using a corresponding jig, which can be, for example, a silicon rod transfer jig. In addition, if necessary, the angle of the first single crystal silicon rod 101 on the silicon rod carrier 21 can be adjusted by rotating the silicon rod carrier 21, which may be placed, for example, at 45 °, i.e., the two diagonals of the first single crystal silicon rod 101 correspond to the lateral movement direction (X-axis direction) and the translation direction (Y-axis direction), respectively. The state of the multi-station processing machine for the single crystal silicon rod after the above operation can be seen in fig. 14, and fig. 14 is a schematic view showing a state in which the silicon rod is vertically placed on the silicon rod support table.

And 2, loading a first silicon rod to be processed in a pretreatment operation area of the silicon rod processing platform. In the present embodiment, the loading of the first single crystal silicon rod 101 to be processed into the pretreatment operation area of the silicon rod processing platform 11 is carried out by means of the silicon rod gripper 25 in the silicon rod handling device 2. Specifically, first, it is ensured that the silicon rod clamp 25 in the silicon rod handling device 2 corresponds to the silicon rod handling location, for example, the silicon rod clamp 25 of the reversing carrier 23 is switched to the silicon rod handling location by driving the reversing carrier 23 to perform a reversing motion; subsequently, the clamping arms 254 in the silicon rod clamping member 253 are driven to perform lowering operation to shift from the unclamped state to the clamped state and clamp the first single crystal silicon rod 101, and the state of the multi-station processing machine for the single crystal silicon rod after the above operation can be specifically seen in fig. 15, where fig. 15 is a schematic diagram showing a state where the silicon rod is clamped by the silicon rod clamp; next, the first single crystal silicon rod 101 is detached from the rod loading and unloading section. The disengagement operation, in an alternative embodiment, the silicon rod holding member 253 maintains the clamped state, and the first single crystal silicon rod 101 is disengaged from the silicon rod support table 21 by the silicon rod support table 21 in the silicon rod loading and unloading section; in another alternative embodiment, the first single crystal silicon rod 101 is driven to be detached from the silicon rod support 21 by driving the silicon rod holding part 253 to move upward (the silicon rod holding part 253 is designed to be movable); then, the reversing carrier 23 is driven to perform reversing movement (for example, 180 degrees of rotation), so that the silicon rod clamp 25 on the reversing carrier 23 is switched to the pretreatment operation area from the silicon rod loading and unloading area; next, the first single crystal silicon rod 101 is placed on the rotary carrying table 531 of the first silicon rod positioning mechanism 53 located at the pretreatment operation area, and the rotary pressing device 533 of the first silicon rod positioning mechanism 53 performs a descending motion through the lifting driving device to press the first single crystal silicon rod 101 for positioning, and after the above operations are performed, the state of the single crystal silicon rod multi-station processing machine can be specifically referred to fig. 16, where fig. 16 is a schematic diagram illustrating a state where the silicon rod is placed in the pretreatment operation area by the reversing carrier.

It should be noted that, in an alternative embodiment, before the first silicon rod is clamped by the silicon rod clamp 25, the height of the first single crystal silicon rod 101 may be detected by the height detector 7, so that the silicon rod clamping members 253 in the silicon rod clamp 25 may be moved upwards or downwards according to the detection result of the height detector 7 to adjust the clamping distance between the silicon rod clamping members 253, and the state of the multi-station single crystal silicon rod processing machine after the above operations may be specifically seen in fig. 17, where fig. 17 is a schematic diagram illustrating a state in which the height detector detects the height of the silicon rod on the loading/unloading carrier platform.

And 3, carrying out plane flatness detection on the first silicon rod at the pretreatment operation area. The state of the multi-station processing machine for the single crystal silicon rod after the above operation can be seen in fig. 18 and 19, which are schematic diagrams illustrating the state of the flatness detector detecting the plane flatness of the silicon rod.

In the present embodiment, the detection of the plane flatness of the first single crystal silicon rod 101 at the pretreatment operation area is carried out by a flatness detector. Specifically, the reversing carrier 23 is driven to perform reversing movement (for example, 180 degrees of rotation), so that the flatness detector on the reversing carrier 23 is switched to the pretreatment operation area from the silicon rod loading and unloading area, wherein the silicon rod clamp 25 and the flatness detector are respectively arranged on a first mounting surface and a second mounting surface which are arranged in the reversing carrier 23 in a back-to-back manner, at this stage, by driving the rotary pressing device 533 of the first silicon rod positioning mechanism 53 to make a rotary motion to adjust the angle of the first single crystal silicon rod 101, if necessary, for example, the first single crystal silicon rod 101 is driven to rotate by 45 °, so that the first single crystal silicon rod 101 is adjusted from the two original diagonal lines corresponding to the lateral movement direction (X-axis direction) and the translation direction (Y-axis direction) to two adjacent side surfaces corresponding to the lateral movement direction and the translation direction, respectively, that is, one of the side surfaces faces the flatness detector on the reversing carrier 23; next, a flatness detector is used to perform plane flatness detection on four sides of the first single crystal silicon rod 101, wherein the plane flatness detection of any one side further includes: the detection controller controls the detector shifting mechanism to drive the contact detector 61 to shift and controls the contact detector 61 to sequentially detect the detection points on the current side surface to be detected in the first single crystal silicon rod 101.

Specifically, on the one hand, the detection of each detection point in any one surface to be detected includes: the detection controller controls a detector shifting mechanism (comprising a first direction shifting mechanism, a second direction shifting mechanism and a third direction shifting mechanism) to drive the contact detector to shift in a moving plane so that the contact detector corresponds to a current detection point to be detected; the detection controller controls the detector shifting mechanism (mainly the second-direction shifting mechanism) to drive the contact detector to move towards the current detection point to be detected until the contact detector contacts the silicon rod, at the moment, the detection controller receives a connection signal (or a disconnection signal) sent by the contact detector, suspends the detection controller to control the detector shifting mechanism to operate according to the connection signal (or the disconnection signal), and calculates the relative distance between the detection point in the surface to be detected which is currently contacted by the contact detector and the reference point through the reference point information and the moving distance of the detector shifting mechanism (mainly the second-direction shifting mechanism) in the second direction; the detection controller controls the detector shifting mechanism to drive the contact detector to move away from the current detection point to be detected so as to reset, and detection of one detection point is completed.

On the other hand, for the detection of a plurality of detection points on the surface to be detected, position switching between the detection points is necessary, so after the detection of the previous detection point is completed, the contact type detector is reset through the detector shifting mechanism and then is shifted to the position of the next detection point through the detector shifting mechanism, wherein the detection points belonging to the same side surface to be detected can be arranged in a regular lattice manner. It should be noted that, after the flatness inspection of one side surface of the first single crystal silicon rod 101 is completed, it is necessary to switch to the next side surface for the flatness inspection. The switching of the side surface may be achieved by transferring the first single crystal silicon rod 101, for example, in a workpiece loading configuration, by actuating the rotary pressing device 533 of the first silicon rod positioning mechanism 53 in a rotational motion to adjust the angle of the first single crystal silicon rod 101 (e.g., to rotate the first single crystal silicon rod 101 by 90 °), to switch to the next adjacent side surface.

Additionally, in step 3, in addition to the plane flatness detection of the first single crystal silicon rod 101 at the pretreatment operation area by the flatness detector 7, the deviation rectification operation of the first single crystal silicon rod 101 may be performed by cooperation of the flatness detector 7 and the silicon rod clamp 25.

In the present embodiment, in the above-described deflection correcting operation, generally, the center of the first single crystal silicon rod 101 is mainly aligned with the center of the rotary susceptor 531. The concrete operation of the deviation rectifying operation can comprise: the flatness detector 7 performs plane flatness detection on the first single crystal silicon rod 101 carried on the rotary carrying table 531, thereby obtaining an overall position profile of the first single crystal silicon rod 101; comparing and analyzing the obtained overall position overview of the first single crystal silicon rod 101 with the position of the rotary bearing table 531, and further obtaining deviation information between the center of the first single crystal silicon rod 101 and the center of the rotary bearing table 531; the reversing carrier 23 rotates 180 degrees to do reversing movement, and the silicon rod clamp 25 on the reversing carrier 23 corresponds to the first single crystal silicon rod 101 on the rotary bearing platform 531 and clamps the first single crystal silicon rod 101; the first direction shifting mechanism and/or the second direction shifting mechanism in the shifting mechanism of the detector are/is controlled by the detection controller to drive the reversing carrier 23 to move in the first direction and/or the second direction, so that the silicon rod clamp 25 and the first single crystal silicon rod 101 clamped by the silicon rod clamp 25 are driven to perform position adjustment relative to the rotary bearing table 531, finally, the center of the first single crystal silicon rod 101 is correspondingly overlapped with the center of the rotary bearing table 531, and the deviation rectifying operation for the first single crystal silicon rod 101 is completed.

In addition, the deviation rectifying operation has a difference in detail for different types of silicon rods.

Taking a single crystal silicon rod as an example, please refer to fig. 20, which shows a schematic diagram of performing a deviation rectifying operation on the single crystal silicon rod. As shown in fig. 20, the silicon single crystal rod to be processed is a silicon cube having a substantially rectangular-like cross section and having four side surfaces, and a connecting edge surface having an R-angle is formed between two adjacent side surfaces. Therefore, the deviation rectifying operation for the single crystal silicon rod may specifically include: the flatness detector detects the plane flatness of four sides of the single crystal silicon rod carried on the rotary bearing table, thereby obtaining the center O of the side of the single crystal silicon rod consisting of the four sides₁(ii) a ByThe flatness detector detects the plane flatness of four connecting edge surfaces of the single crystal silicon rod carried on the rotary bearing table, so as to obtain the center O of the connecting edge surface of the single crystal silicon rod consisting of the four connecting edge surfaces₂(ii) a Calculating to obtain the size of a finished product of the single crystal silicon rod after the single crystal silicon rod is subjected to multi-station processing; according to the size of the finished product of the single crystal silicon rod and the center O of the side surface of the single crystal silicon rod₁Center O of the connecting edge surface of the silicon single crystal rod₂Calculating the center O of the silicon single crystal rod₃(ii) a The center O of the obtained single crystal silicon rod finished product₃Comparing and analyzing the deviation information with the center O of the rotary bearing table; the silicon rod clamp on the reversing carrier corresponds to the single crystal silicon rod on the rotary bearing table and clamps the single crystal silicon rod, the first direction shifting mechanism and/or the second direction shifting mechanism in the shifting mechanism of the detector are controlled by the detection controller to drive the reversing carrier to move in the first direction and/or the second direction, so that the silicon rod clamp and the single crystal silicon rod clamped by the silicon rod clamp are driven to perform position adjustment relative to the rotary bearing table, and finally, the center O of the finished single crystal silicon rod is adjusted₃Correspondingly coinciding with the center O of the rotary bearing table to finish the deviation rectifying operation aiming at the single crystal silicon rod.

And 4, switching the first silicon rod which is subjected to the plane flatness detection from the pretreatment operation area to the first operation area from the pretreatment operation area, and carrying out circle cutting and rough grinding operation on the first silicon rod on the first operation area, and at this stage, loading the second silicon rod to be processed on the pretreatment operation area and carrying out pretreatment. The state of the multi-station processing machine for single crystal silicon rods after the above-mentioned operations is shown in fig. 21, which is a schematic view showing the state of the first silicon rod being subjected to the rounding and rough grinding operation and the second silicon rod being loaded.

In this embodiment, the switching of the first silicon rod, which has completed the plane flatness detection, from the pretreatment operation area to the first operation area is performed by rotating the silicon rod switching device by a first preset angle, as described above, the pretreatment operation area, the first operation area, and the second operation area are distributed at 120 ° in pairs, and the three silicon rod positioning mechanisms 53 are also distributed at 120 ° in pairs, so that the rotation of the silicon rod switching device 5 by the first preset angle actually causes the silicon rod switching device 5 to rotate forward by 120 °, and the first silicon rod positioning mechanism 53 originally located on the pretreatment operation area and the first single crystal silicon rod 101 positioned by the same are switched to the first operation area.

The circle-cutting and rough-grinding operation of the first single crystal silicon rod 101 on the first operation region is performed by the circle-cutting and rough-grinding apparatus 3. In the case where the first single crystal silicon rod 101 is a single crystal silicon rod, the circle-cutting and rough-grinding device 3 is a circle-cutting and rough-grinding device. The circle cutting and rough grinding operation of the single crystal silicon rod by the circle cutting and rough grinding device may substantially comprise: circle cutting processing operation and coarse grinding processing operation.

The circle cutting operation further comprises: firstly, the silicon rod conversion device 5 is used for transferring the first single crystal silicon rod 101 to the first operation area, and the first silicon rod positioning mechanism 53 is used for positioning and adjusting the first single crystal silicon rod 101; initially, when the silicon rod transferring device 5 transfers the first single crystal silicon rod 101 to the first operation area, the side surfaces of the first single crystal silicon rod 101 correspond to a pair of first grinding tools 33 in the circle and rough grinding device, so that the positioning adjustment of the first single crystal silicon rod 101 by the first silicon rod positioning mechanism 53 may, for example, include driving the first single crystal silicon rod 101 to rotate forward (or backward) by 45 ° so that the first pair of connecting facets in the first single crystal silicon rod 101 reaches the initial rough cutting position and corresponds to a pair of first grinding tools 33 in the circle and rough grinding device, driving the first grinding tool 33 to feed transversely relative to the first machine frame 31 according to the feeding amount, rotating the first grinding wheel 34 in the first grinding tool 33 and driving the first grinding tool 33 to move up and down to perform the first rough cutting of the first pair of connecting facets in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards for 5 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform the second rough cutting on the first pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 80 degrees, so that the second pair of connecting prism surfaces in the first single crystal silicon rod 101 corresponds to one pair of first grinding tools 33 in the circle-cutting and rough-grinding device, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down to perform first rough cutting on the second pair of connecting prism surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards by 5 degrees, at this time, the second pair of connecting edge surfaces of the first single crystal silicon rod 101 reaches the initial rough cutting position and corresponds to one pair of first grinding tools 33 in the circle cutting and rough grinding device, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform the second rough cutting on the second pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards for 5 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform the third rough cutting on the second pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 80 °, rotates the first grinding wheel 34 in the first grinding tool 33, and drives the first grinding tool 33 to move up and down to perform the third rough cutting on the first pair of connecting prism surfaces in the first silicon rod 101. Specifically, fig. 22 shows a state in which the single crystal silicon rod serving as the first single crystal silicon rod 101 is subjected to the above-described rounding operation, and fig. 22 is a schematic view showing a state change of the single crystal silicon rod during the rounding operation.

In particular, in the round cutting operation, the first silicon single crystal rod 101 is driven by the first silicon rod positioning mechanism 53 to rotate by a corresponding angle, for example: the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 5 °, which is not the only implementation manner, and in other optional embodiments, the adjustment angle may be adapted to be, for example, 3 ° to 7 °, including 3 °, 4 °, 5 °, 6 °, 7 °, or other angles, and accordingly, the adjustment angle is adapted when the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 80 °. Referring to table one below, table one shows exemplary instances of various values of the rotation angle in the range of 3 ° to 7 °.

Watch 1

The circle cutting process is only an example of the circle cutting process, but not limited thereto, for example: firstly, the silicon rod conversion device 5 is utilized to transfer the first single crystal silicon rod 101 to a first operation area, the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 40 degrees, so that a first pair of connecting edge surfaces in the first single crystal silicon rod 101 corresponds to a pair of first grinding tools 33 in the circle-cutting and rough-grinding device, and a first grinding wheel 34 in the first grinding tool 33 is rotated and drives the first grinding tool 33 to move up and down to perform first rough cutting on the first pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards for 5 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform the second rough cutting on the first pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards for 5 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform third rough cutting on the first pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 80 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform primary rough cutting on the second pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forwards for 5 degrees, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down so as to perform the second rough cutting on the second pair of connecting edge surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward by 5 °, rotates the first grinding wheel 34 in the first grinding tool 33, and drives the first grinding tool 33 to move up and down to perform the third rough cutting on the second pair of connecting edge surfaces in the first silicon rod 101.

The rough grinding process operation further includes: firstly, the silicon rod conversion device 5 is used for transferring the first single crystal silicon rod 101 to a first operation area, the first silicon rod positioning mechanism 53 is used for positioning and adjusting the first single crystal silicon rod 101, so that a first pair of side surfaces in the first single crystal silicon rod 101 reach an initial rough grinding position and correspond to a pair of first grinding tools 33 in the circle cutting and rough grinding device, the first grinding tool 33 is transversely fed relative to the first machine frame 31 according to the feeding amount, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down to roughly grind the first pair of side surfaces in the first single crystal silicon rod 101; the first silicon rod positioning mechanism 53 drives the first single crystal silicon rod 101 to rotate forward (or backward) by 90 degrees, so that the second opposite side surface of the first silicon rod 101 reaches the initial rough grinding position and corresponds to the pair of first grinding tools 33 in the circle-cutting and rough-grinding device, the first grinding wheel 34 in the first grinding tool 33 is rotated, and the first grinding tool 33 is driven to move up and down to roughly grind the second opposite side surface of the first silicon rod 101. Specifically, fig. 23 shows a state of the silicon single crystal rod as the first silicon single crystal rod 101 during the rough grinding operation, and fig. 23 is a schematic view showing a state change of the silicon single crystal rod during the rough grinding operation.

In step 4, the second silicon rod to be processed is loaded in the pretreatment operation area and is subjected to pretreatment, which is described in step 2 and step 3 and is not described herein again.

Step 5, switching the first silicon rod which is subjected to the circle cutting and rough grinding operation from the first operation area to the second operation area and switching the second silicon rod which is subjected to the pretreatment from the pretreatment operation area to the first operation area; and performing rounding and fine grinding operation on the first silicon rod on the second operation area, and performing circle cutting and coarse grinding operation on the second silicon rod on the first operation area and loading a third silicon rod to be processed on the pretreatment operation area for pretreatment. Specifically, the state of the multi-station single crystal silicon rod processing machine after the above-mentioned operations is shown in fig. 24, and fig. 24 is a schematic view showing the state of the multi-station single crystal silicon rod processing machine according to the present application, in which three silicon rods are simultaneously processed.

In the present embodiment, the transfer of the first single crystal silicon rod 101, which has completed the round and rough grinding operations, from the first operation region to the second operation region and the transfer of the second single crystal silicon rod 102, which has completed the pretreatment, from the pretreatment operation region to the first operation region are performed by rotating the silicon rod transferring device 5 by a second predetermined angle, as mentioned above, the pretreatment operation area, the first operation area and the second operation area are distributed at 120 degrees, the three silicon rod positioning mechanisms 53 are also distributed at 120 degrees, thus, rotating the silicon rod transfer device 5 by the second predetermined angle is actually rotating the silicon rod transfer device 5 forward by 120 °, and the first silicon rod positioning means 53 and the first single crystal silicon rod 101 positioned by the first silicon rod positioning means originally located in the first working area are transferred to the second working area and the second silicon rod positioning means 53 and the second single crystal silicon rod 102 positioned by the second silicon rod positioning means originally located in the pretreatment working area are transferred to the first working area.

The rounding and finish grinding operation of the first single crystal silicon rod 101 in the second operation region is performed by the rounding and finish grinding apparatus 4. In the case where the first single crystal silicon rod 101 is a single crystal silicon rod, the rounding and finish grinding apparatus 4 is a rounding and finish grinding apparatus. The operation of rounding and fine grinding the single crystal silicon rod by the rounding and fine grinding device may substantially comprise: round rolling processing operation and fine grinding processing operation. The rounding process further comprises: the first single crystal silicon rod 101 serving as the single crystal silicon rod is transferred to the second operation area of the silicon rod processing platform by the silicon rod conversion device 5, the first silicon rod 101 is positioned by the first silicon rod positioning mechanism 53 and the first single crystal silicon rod 101 is rotated, the second grinding tool 43 is transversely fed relative to the second frame 41 according to the feeding amount, the second grinding wheel 44 in the second grinding tool 43 is rotated and the second grinding tool 43 is driven to move up and down to grind and round each connecting edge surface of the first single crystal silicon rod 101, so that the connecting edge surface of the first single crystal silicon rod 101 is ground to a preset size and is integrally rounded, that is, the connecting edge surface and the side surface are in smooth transition. Specifically, fig. 25 shows a state in which the single crystal silicon rod as the first single crystal silicon rod 101 is subjected to the above-described rounding operation, and fig. 25 is a schematic view showing a state of the single crystal silicon rod during the rounding operation.

The finish grinding process further comprises: positioning and adjusting the first single crystal silicon rod 101 by the first silicon rod positioning mechanism 53, so that a first pair of side surfaces in the first single crystal silicon rod 101 reaches an initial finish grinding position and corresponds to a pair of second grinding tools 43 in the rounding and finish grinding device 4, transversely feeding the second grinding tools 43 relative to the second frame 41 according to the feeding amount, rotating the second grinding wheels 44 in the second grinding tools 43 and driving the second grinding tools 43 to move up and down to finish the first pair of side surfaces in the first single crystal silicon rod 101; the first silicon single crystal rod 101 is rotated by the first silicon rod positioning mechanism 53 in a forward (or reverse) direction by 90 °, so that the second pair of side surfaces of the first silicon single crystal rod 101 reaches the initial lapping position and corresponds to the pair of second grinding tools 43 of the rounding and lapping device 4, the second grinding wheel 44 of the second grinding tool 43 is rotated and the second grinding tool 43 is driven to move up and down to lap the second pair of side surfaces of the first silicon single crystal rod 101. Specifically, fig. 26 is a view showing a state in which the single crystal silicon rod as the first single crystal silicon rod 101 is subjected to the above-described finish grinding operation, and fig. 26 is a schematic view showing a state of the single crystal silicon rod during the finish grinding operation.

In step 5, the second silicon rod after the plane flatness detection is transferred from the pretreatment operation area to the first operation area from the pretreatment operation area, and the second silicon rod 102 on the first operation area is subjected to the rounding and rough grinding operation, which is described in step 4, while the third silicon rod to be processed is loaded in the pretreatment operation area and subjected to the pretreatment, which is described in step 2 and step 3, which is not described again.

Step 6, switching the first silicon rod which completes the rounding and fine grinding operation from the second operation area to a pretreatment operation area, switching the second silicon rod which completes the rounding and coarse grinding operation from the first operation area to the second operation area, and switching the third silicon rod which completes the pretreatment from the pretreatment operation area to the first operation area; and unloading the first silicon rod on the pretreatment operation area, loading a fourth silicon rod to be processed on the pretreatment operation area, and pretreating the fourth silicon rod positioned at the pretreatment operation area, wherein at the stage, the second silicon rod on the second operation area is subjected to rounding and fine grinding operation, and the third silicon rod on the first operation area is subjected to rounding and rough grinding operation. Specifically, the state of the multi-station processing machine for the single crystal silicon rod after the above-mentioned operations can be seen in fig. 27, and fig. 27 is a schematic view showing a state of discharging the silicon rod after the processing operation is completed.

In this embodiment, the transfer of the first single crystal silicon rod 101 having been subjected to the rounding and finish grinding operations from the second operation region to the pretreatment operation region and the transfer of the second silicon rod having been subjected to the rounding and finish grinding operations from the first operation region to the second operation region and the transfer of the third silicon rod having been subjected to the pretreatment operation region to the first operation region from the pretreatment operation region are carried out by rotating the silicon rod transfer device 5 by a third predetermined angle, as described above, the pretreatment operation region, the first operation region and the second operation region are arranged at 120 ° with respect to each other, and the three silicon rod positioning mechanisms 53 are arranged at 120 ° with respect to each other, so that the rotation of the silicon rod transfer device 5 by the third predetermined angle is actually carried out by rotating the silicon rod transfer device 5 in the reverse direction by 240 ° or rotating the silicon rod transfer device 5 in the forward direction by 120 °, and the first silicon rod positioning mechanism 53 originally located in the second operation region and the first single crystal silicon rod 101 positioned in the second operation region are transferred to the pretreatment operation region, The second silicon rod positioning mechanism 53, which was originally located on the first working area, and the second single crystal silicon rod 102 positioned thereby are transferred onto the second working area, and the third silicon rod positioning mechanism 53, which was originally located on the pretreatment working area, and the third single crystal silicon rod 103 positioned thereby are transferred onto the first working area.

In particular, the silicon rod transfer device 5 is rotatably disposed on the silicon rod processing platform for transferring the silicon rod among the pretreatment operation area, the first operation area, and the second operation area, and a detailed description thereof will be necessary.

Fig. 28 is a schematic view showing a multi-station processing machine for a silicon single crystal rod according to the present application in a three-station processing operation. As shown in fig. 28, in this embodiment, the pretreatment operation area, the first operation area, and the second operation area on the silicon rod processing platform are sequentially disposed, wherein a silicon rod loading and unloading device is correspondingly disposed at the pretreatment operation area, a circle cutting and rough grinding device is correspondingly disposed at the first operation area, a circle rolling and finish grinding device is correspondingly disposed at the second operation area, and the pretreatment operation area, the first operation area, and the second operation area are distributed at 120 ° with respect to each other, and correspondingly, three silicon rod positioning mechanisms on the circular or circular conveying body are also distributed at 120 ° with respect to each other.

Here, it is assumed that the direction in the order of the preprocessing work area, the first work area, and the second work area is a forward direction, and the direction in the order opposite to the forward direction is a reverse direction. Accordingly, the process of performing the multi-station processing of the silicon rod may generally include: in an initial state, the silicon rod loading and unloading device 2 loads a first single crystal silicon rod 101 to be processed in a pretreatment operation area of a silicon rod processing platform, and pretreats the first single crystal silicon rod 101 located at the pretreatment operation area; the silicon rod transfer device 5 is rotated forward by 120 degrees to transfer the pretreated first single crystal silicon rod 101 from the pretreatment operation area to the first operation area, the circle and rough grinding device 3 is used for carrying out circle and rough grinding operations on the first single crystal silicon rod 101 on the first operation area, and at this stage, the silicon rod loading and unloading device 2 is used for loading the second single crystal silicon rod 102 to be processed on the pretreatment operation area for pretreatment; the silicon rod conversion device 5 is rotated forwards by 120 degrees to convert the first single crystal silicon rod 101 which is subjected to the rounding and rough grinding operation from the first operation area to the second operation area and convert the second single crystal silicon rod 102 which is subjected to the pretreatment from the pretreatment operation area to the first operation area, the rounding and fine grinding device 4 is used for rounding and fine grinding the first single crystal silicon rod 101 on the second operation area, and at this stage, the rounding and rough grinding device 3 is used for rounding and rough grinding the second single crystal silicon rod 102 on the first operation area and the silicon rod loading and unloading device 5 is used for loading the third single crystal silicon rod 103 to be processed on the pretreatment operation area and carrying out pretreatment; the silicon rod transfer device 5 is rotated forward by 120 ° or reversely by 240 ° to transfer the first single crystal silicon rod 101 on which the rounding and finish grinding operations are completed from the second operation region to the pretreatment operation region, and to transfer the second single crystal silicon rod 102 on which the rounding and rough grinding operations are completed from the first operation region to the second operation region, and to transfer the third single crystal silicon rod 103 on which the pretreatment is completed from the pretreatment operation region to the first operation region, and the first single crystal silicon rod 101 on the pretreatment operation region is unloaded.

The cables such as power supply wires or signal wires arranged in the multi-station silicon single crystal rod processing machine cannot be excessively wound due to excessive rotation of the silicon rod conversion device so as not to cause the cables to be broken. In specific embodiments, the technical solution provided by the present application considers that the maximum rotation angle of the silicon rod transferring device is limited, that is, in the process of making the silicon rod transferring device transfer the first single crystal silicon rod 101 from the second operation area to the pretreatment operation area, the following two cases may be included:

in the first case, the rotation angle range of the silicon rod transfer device 5 is ± 240 °, specifically, the silicon rod transfer device 5 returns to the original position after two forward rotations of 120 ° and one reverse rotation of 240 °, and the first single crystal silicon rod 101 on which the rounding and finish grinding operations are completed is transferred from the second operation area to the pretreatment operation area. The beneficial effects brought by the condition also include that a more flexible design space can be provided for the internal structure design of the whole multi-station single crystal silicon rod processing machine, for example, the situation that other components are arranged between the second processing area and the pretreatment area without considering the rotation of the silicon rod conversion device is blocked can be considered.

In the second case, the rotation angle range of the silicon rod conversion device is ± 360 °, so that the silicon rod conversion device 5 converts the first single crystal silicon rod 101, which has completed the rounding and fine grinding operations, from the second operation area to the pretreatment operation area after rotating for 360 ° for one circle, and then rotates for one circle in the reverse direction for 360 ° to release the cable wound during the forward rotation.

In short, the above two rotation modes can achieve substantially the same effect, but the arrangement of the silicon rod conversion device is not limited thereto, and the conversion mode (for example, the rotation direction and the rotation angle) of the silicon rod conversion device can be changed as long as the silicon rod to be processed can smoothly, smoothly and efficiently complete each processing operation.

Of course, the silicon rod transfer device may also continue to employ such a unidirectional infinite rotation manner if the above-mentioned risk of excessive winding of the cable or the problem of providing other components between the second processing zone and the pretreatment zone is not taken into account.

Since the operations of loading and unloading the silicon rod, detecting the plane flatness, rounding and rough grinding, and rounding and finish grinding have been described in the foregoing, they are not described in detail herein.

Through the steps, the processing devices on the processing stations respectively take their own roles, the processing devices are orderly and seamlessly transferred to automatically realize a plurality of working procedures for processing the silicon rod, assembly line operation is formed, and the production efficiency and the quality of product processing operation are improved.

The above embodiments are merely illustrative of the principles and utilities of the present application and are not intended to limit the application. Any person skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical concepts disclosed in the present application shall be covered by the claims of the present application.

Claims

1. A multi-station processing method of a single crystal silicon rod is applied to a multi-station processing machine of the single crystal silicon rod with a circle cutting and coarse grinding device, and is characterized in that: the multi-station processing method of the silicon single crystal rod comprises the following steps: placing the silicon single crystal rod to be processed in an operation area of the circle cutting and coarse grinding device; enabling the circle cutting and rough grinding device to cut the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod into circles; and enabling the circle cutting and rough grinding device to perform rough grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod;

the step of enabling the circle cutting and rough grinding device to cut the circle of the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod comprises the following steps: the circle cutting and rough grinding device is used for respectively carrying out rough cutting operation for at least three times on the first pair of connecting edge surfaces and the second pair of connecting edge surfaces of the single crystal silicon rod;

the step of roughly cutting one pair of connecting edge surfaces of the first pair and the second pair of connecting edge surfaces of the single crystal silicon rod for at least three times by the circle and rough grinding device comprises the following steps: rotating a pair of connecting prism surfaces in the single crystal silicon rod to an initial rough cutting position to correspond to a pair of first grinding tools in the circle and rough grinding device; the first grinding tool carries out primary rough cutting operation on the pair of connecting edge surfaces; the single crystal silicon rod is positively rotated by a first deflection angle relative to the initial rough cutting position, and the first grinding tool is used for carrying out secondary rough cutting operation on the first pair of connecting edge surfaces; and

and reversely rotating the single crystal silicon rod by a second deflection angle relative to the initial rough cutting position, and enabling the first grinding tool to perform rough cutting operation for the third time on the pair of connecting edge surfaces.

2. The multi-station processing method of the silicon single crystal rod according to claim 1, wherein: the first deflection angle ranges from 3 ° to 7 °, and the second deflection angle ranges from 3 ° to 7 °.

3. The multi-station processing method of the silicon single crystal rod according to claim 1, wherein: the step of enabling the circle cutting and rough grinding device to conduct rough grinding operation on one of the first pair of side faces and the second pair of side faces of the single crystal silicon rod comprises the following steps: rotating a pair of side surfaces in the single crystal silicon rod to an initial rough grinding position to correspond to a pair of first grinding tools; and enabling the first grinding tool to perform rough grinding operation on the pair of side surfaces.

4. The multi-station processing method of the silicon single crystal rod according to claim 1, wherein: the single crystal silicon rod multi-station processing machine also comprises a rounding and fine grinding device; the multi-station processing method of the single crystal silicon rod further comprises the following steps: placing the to-be-processed single crystal silicon rod in an operation area of the rounding and fine grinding device; enabling the rounding and fine grinding device to carry out rounding operation on the connecting edge surface of the silicon single crystal rod; and enabling the rounding and fine grinding device to carry out fine grinding operation on the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod.

5. The multi-station processing method of the silicon single crystal rod as set forth in claim 4, wherein: the rounding and fine grinding device is used for rounding the connecting edge surface of the silicon single crystal rod, and the rounding and fine grinding device comprises the following steps: adjusting the grinding distance of a pair of second grinding tools in the rounding and fine grinding device; and rotating the single crystal silicon rod to enable the second grinding tool to perform rounding operation on the connecting edge surface of the single crystal silicon rod.

6. The multi-station processing method of the silicon single crystal rod as set forth in claim 4, wherein: the step of enabling the rounding and fine grinding device to carry out fine grinding operation on one of the first pair of side surfaces and the second pair of side surfaces of the single crystal silicon rod comprises the following steps: rotating a pair of side surfaces in the single crystal silicon rod to an initial finish grinding position to correspond to a pair of second grinding tools; and enabling the second grinding tool to carry out fine grinding operation on the pair of side surfaces.

7. The multi-station processing method of the silicon single crystal rod according to claim 1, wherein: and the method also comprises the step of performing deviation rectifying operation on the single crystal silicon rod to be processed.

8. A multi-station processing machine for the silicon single crystal rod, which applies the multi-station processing method for the silicon single crystal rod according to any one of claims 1 to 7.