CN108899317B - Bidirectional transient voltage suppressor for auxiliary triggering SCR of diode string - Google Patents
Bidirectional transient voltage suppressor for auxiliary triggering SCR of diode string Download PDFInfo
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- CN108899317B CN108899317B CN201810746126.1A CN201810746126A CN108899317B CN 108899317 B CN108899317 B CN 108899317B CN 201810746126 A CN201810746126 A CN 201810746126A CN 108899317 B CN108899317 B CN 108899317B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Abstract
A bidirectional transient voltage suppressor for triggering SCR with the aid of a diode string belongs to the field of electrostatic discharge protection and surge resistance of integrated circuits, and can be used for improving the electrostatic discharge protection or surge resistance of on-chip ICs and circuit systems. The bidirectional transient voltage suppressor is mainly composed of a P substrate, a deep N well, an N well, a P well, a first P + injection region, a first N + injection region, a second P + injection region, a second N + injection region, a third P + injection region, a third N + injection region and a metal wire. The device can realize bidirectional ESD or transient surge protection without hysteresis and with strong robustness under the action of forward and reverse electrical stress by combining the advantages of low trigger voltage of a diode string, strong robustness of the over-current stress of a BJT or SCR structure and the like.
Description
Technical Field
The invention belongs to the field of electrostatic discharge protection and surge resistance of integrated circuits, relates to an electrostatic discharge protection or surge resistance device, and particularly relates to a bidirectional transient voltage suppressor of a diode string auxiliary trigger SCR (silicon controlled rectifier), which can be used for improving the system reliability of an on-chip IC (integrated circuit) and a circuit system.
Background
Because an IC and its related electronic products may be affected by electrostatic discharge (ESD), transient voltage or current surge during manufacturing, assembly, testing and application, and the circuit function or system stability is weakened or destroyed, the research on ESD protection and surge resistance is especially important in semiconductor and electronic engineering applications. The damage and loss of ESD or surge phenomenon to national economy has attracted the close attention and attention of electronic engineers and researchers at home and abroad in recent years. The research and design of the effective ESD protection and surge-resistant transient voltage suppressor have very important scientific research and economic values for national economy and social development.
For ESD protection or anti-surge of a low-voltage circuit, particularly a radio-frequency circuit, the most efficient ESD protection or anti-surge device ensures that the device has lower trigger voltage, smaller capacitance, stronger current discharge capacity and over-current stress robustness on the premise of occupying the minimum layout area. In addition, because transient electric signals usually have the characteristics of uncertainty of the direction of electric stress and the like at some signal I/O ports, the traditional unidirectional ESD protection or anti-surge device has larger leakage current and weaker voltage clamping capability under the action of reverse electric stress. Therefore, the bidirectional ESD protection or anti-surge device is designed, the ESD protection or anti-surge requirements of some special I/O ports can be met, and the highest efficiency ratio of ESD protection or anti-surge can be realized on the premise of not increasing the area of the device. In the field of ESD protection or anti-surge application of the existing low-voltage circuit, the diode string has the characteristic of flexible and controllable trigger voltage, and is widely applied. However, the diode string is less robust and has poor ESD protection or surge protection capability. Silicon Controlled Rectifier (SCR) is currently a device of great potential interest for ESD protection or surge protection, having high current discharge capability, unlike diode strings. However, SCR has a high trigger voltage and a low holding voltage, and there is a large risk of latch-up. The invention provides a design method and a manufacturing principle of a bidirectional transient voltage suppressor of a diode string auxiliary trigger SCR (silicon controlled rectifier). according to the voltage clamping effect of a series path of two diodes and the positive feedback effect among a plurality of parasitic BJTs (bipolar junction transistors), the ESD protection or anti-surge function without hysteresis and with strong robustness can be realized. In addition, the device can present the same electrical characteristics under the action of forward and reverse electrical stress, and has bidirectional ESD protection or anti-surge function. Compared with the traditional device, the device can greatly save the chip area and effectively improve the unit area efficiency of the device in the ESD protection or anti-surge process.
Disclosure of Invention
Aiming at the problems that the robustness of a diode is weak, the trigger voltage of an SCR device is high and the SCR device is not suitable for ESD protection or surge resistance in the low-voltage field, the invention designs the bidirectional transient voltage suppressor of the diode string auxiliary trigger SCR, and the bidirectional transient voltage suppressor can reduce the trigger voltage of the device and enhance the robustness of the device on the premise of not increasing the area of the device by utilizing the characteristics of controllability and no hysteresis of the trigger voltage of the diode and combining the advantages of strong robustness of the over-current stress of a BJT or the SCR. Meanwhile, the device can form a current discharge path with the same electrical characteristics under the action of forward and reverse electrical stress, and bidirectional ESD or transient surge protection is realized.
The invention is realized by the following technical scheme:
a bidirectional transient voltage suppressor for diode string assisted triggering of SCR is characterized in that: the deep N well mainly comprises a P substrate, a deep N well, an N well, a P well, a first P + injection region, a first N + injection region, a second P + injection region, a second N + injection region, a third P + injection region, a third N + injection region and a metal wire;
the surface area of the P substrate is provided with a deep N well, the left side edge of the P substrate is connected with the left side edge of the deep N well, and the right side edge of the deep N well is connected with the right side edge of the P substrate;
an N well and a P well are sequentially arranged in the surface region of the deep N well from left to right, the left side edge of the deep N well is connected with the left side edge of the N well, the right side edge of the N well is connected with the left side edge of the P well, and the right side edge of the P well is connected with the right side edge of the deep N well;
a first P + injection region, a first N + injection region and a second P + injection region are sequentially arranged on the surface region of the N well from left to right;
a second N + injection region, a third P + injection region and a third N + injection region are sequentially arranged on the surface region of the P well from left to right;
the metal wire is used for connecting the injection region, and two electrodes are led out from the metal wire and used as two electrical stress terminals;
the connection mode of the metal wire and the injection region is as follows: the first P + injection region is connected with the first metal, the first N + injection region is connected with the second metal, the second P + injection region is connected with the third metal, the second N + injection region is connected with the fourth metal, the third P + injection region is connected with the fifth metal, and the third N + injection region is connected with the sixth metal;
the second metal and the fifth metal are both connected with a seventh metal;
the first metal and the sixth metal are both connected with the eighth metal, and a first electrode is led out from the eighth metal and used as a first electrical stress terminal of the device;
and the third metal and the fourth metal are both connected with the ninth metal, and a second electrode is led out from the ninth metal and is used as a second electrical stress terminal of the device.
The beneficial technical effects of the invention are as follows:
(1) in the device, when a first electrical stress terminal of the device is connected with a high potential and a second electrical stress terminal of the device is grounded, a diode D1 is formed by a first P + injection region and an N well, a diode D2 is formed by the P well and a second N + injection region, a first series path is formed by the diode D1 and the diode D2 through the first N + injection region, the metal wire and a third P + injection region, a PNP tube T4 is formed by the first P + injection region, the N well and the P well, an NPN tube T3 is formed by the N well, the P well and the second N + injection region, and the PNP tube T4 and the NPN tube T3 form a first SCR structure.
(2) In the device, when a first electrical stress terminal of the device is grounded and a second electrical stress terminal is connected with a high potential, a diode D3 formed by a second P + injection region and an N well, a diode D4 formed by the P well and a third N + injection region, a diode D3 and a diode D4 form a second series path through the first N + injection region, the metal wire and the third P + injection region, an NPN tube T5 formed by the N well, the P well and the third N + injection region, an NPN tube T6 formed by the second P + injection region, the N well and the P well, and a PNP tube T5 and the NPN tube T6 form a second SCR structure, and the second series path assists in triggering the second SCR structure under the electrical action, so that the triggering voltage of the device can be reduced.
(3) In the device, the first P + injection region, the N well and the second P + injection region form the PNP tube T1, and when the first series path is conducted, the PNP tube T1 is in an amplification state, so that the current discharge capacity of the device can be improved, and the robustness can be enhanced.
(4) In the device, when the second series path is conducted, the NPN transistor T2 is in an amplification state, and the NPN transistor T2 formed by the second N + injection region, the P-well, and the third N + injection region can improve the current discharge capability of the device and enhance the robustness.
(5) In the device, positive and reverse electrical stresses are applied between two electrical stress terminals, the electrical characteristics of the device are the same, and the bidirectional transient voltage suppressor with the diode string for assisting in triggering SCR has bidirectional electrostatic discharge protection or anti-surge function.
Drawings
FIG. 1 is a cross-sectional view of a device structure of the present invention;
FIG. 2 is a device metal wiring diagram of the present invention;
FIG. 3 is an equivalent circuit diagram of the device of the present invention under positive electrical stress;
fig. 4 is an equivalent circuit diagram of the device of the present invention under reverse electrical stress.
In the figure: a 101P substrate; 102 deep N-well; 103N well; 104P well; 105 a first P + implant region; 106 a first N + implant region; 107 second P + implant region; 108 a second N + implant region; 109 a third P + implant region; 110 a third N + implant region; 201 a first metal; 202 a second metal; 203 a third metal; 204 a fourth metal; 205 a fifth metal; 206 a sixth metal; 207 a seventh metal; 208 an eighth metal; 209 a ninth metal; 210 a tenth metal; 211 eleventh metal.
Detailed Description
The invention is described in further detail below with reference to the following figures and detailed description:
the invention designs a bidirectional transient voltage suppressor for assisting triggering SCR by a diode string by combining the characteristics of low and controllable trigger voltage of the diode string, strong robustness of the over-current stress of an SCR structure and the like. The device can form a current discharge path with strong robustness and no hysteresis characteristic under the action of forward and reverse electrical stress, and realizes bidirectional ESD or transient surge protection.
The cross section of the device structure of the bidirectional transient voltage suppressor provided by the invention is shown in figure 1, and the bidirectional transient voltage suppressor is characterized in that: the deep N well structure mainly comprises a P substrate 101, a deep N well 102, an N well 103, a P well 104, a first P + injection region 105, a first N + injection region 106, a second P + injection region 107, a second N + injection region 108, a third P + injection region 109, a third N + injection region 110 and metal wires;
the surface area of the P substrate 101 is provided with a deep N well 102, the left edge of the P substrate 101 is connected with the left edge of the deep N well 102, and the right edge of the deep N well 102 is connected with the right edge of the P substrate 101;
an N well 103 and a P well 104 are sequentially arranged on the surface area of the deep N well 102 from left to right, the left edge of the deep N well 102 is connected with the left edge of the N well 103, the right edge of the N well 103 is connected with the left edge of the P well 104, and the right edge of the P well 104 is connected with the right edge of the deep N well 102;
a first P + injection region 105, a first N + injection region 106 and a second P + injection region 107 are sequentially arranged in the surface region of the N well 103 from left to right;
a second N + injection region 108, a third P + injection region 109 and a third N + injection region 110 are sequentially arranged in the surface region of the P-well 104 from left to right;
the metal wire is used for connecting the injection region, and two electrodes are led out from the metal wire and used as two electrical stress terminals.
In the bidirectional transient voltage suppressor provided by the present invention, a device metal connection line is shown in fig. 2, and the connection mode between the metal line and the injection region is as follows: the first P + injection region 105 is connected with the first metal 201, the first N + injection region 106 is connected with the second metal 202, the second P + injection region 107 is connected with the third metal 203, the second N + injection region 108 is connected with the fourth metal 204, the third P + injection region 109 is connected with the fifth metal 205, and the third N + injection region 110 is connected with the sixth metal 206;
the second metal 202 and the fifth metal 205 are both connected to a seventh metal 207;
the first metal 201 and the sixth metal 206 are both connected with an eighth metal 208, and a first electrode 209 is led out from the eighth metal 208 and is used as a first electrical stress terminal of the device;
An equivalent circuit of the bidirectional transient voltage suppressor provided by the invention under the action of forward electrical stress is shown in fig. 3, when a first electrical stress terminal of the device is connected with a high potential and a second electrical stress terminal of the device is grounded, a diode D1 is formed by a first P + injection region 105 and an N well 103, a diode D2 is formed by a P well 104 and a second N + injection region 108, a first series path is formed by the diode D1 and the diode D2 through a first N + injection region 106, the metal wire and a third P + injection region 109, and when the electrical stress reaches 1.4V, the first series path is opened. Meanwhile, the PNP transistor T1 formed by the first P + injection region 105, the N well 103, and the second P + injection region 107, the NPN transistor T2 formed by the second N + injection region 108, the P well 104, and the third N + injection region 110, the NPN transistor T3 formed by the N well 103, the P well 104, and the second N + injection region 108, and the PNP transistor T4 formed by the first P + injection region 105, the N well 103, and the P well 104 all start to operate in an amplification state, which can improve the current discharge capability of the device. The first SCR structure formed by the PNP tube T4 and the NPN tube T3 is beneficial to further enhancing the robustness of the device.
An equivalent circuit of the bidirectional transient voltage suppressor provided by the invention under the action of reverse electrical stress is shown in fig. 4, when a first electrical stress terminal of the device is grounded and a second electrical stress terminal is connected with a high potential, a diode D3 formed by a second P + injection region 107 and an N well 103 forms a diode D4 by a P well 104 and a third N + injection region 110, a diode D3 and a diode D4 form a second series path through a first N + injection region 106, the metal wire and the third P + injection region 109, and when the electrical stress reaches 1.4V, the second series path is opened. Meanwhile, the PNP transistor T1 formed by the first P + injection region 105, the N well 103, and the second P + injection region 107, the NPN transistor T2 formed by the second N + injection region 108, the P well 104, and the third N + injection region 110, the NPN transistor T5 formed by the N well 103, the P well 104, and the third N + injection region 110, and the PNP transistor T6 formed by the second P + injection region 107, the N well 103, and the P well 104 all start to operate in an amplification state, which can improve the current discharge capability of the device. The second SCR structure formed by the PNP tube T5 and the NPN tube T6 is beneficial to further enhancing the robustness of the device.
And positive and negative electrical stresses are applied between the first electrical stress terminal and the second electrical stress terminal, the electrical characteristics of the device are the same, and the bidirectional transient voltage suppressor of the diode string for assisting in triggering the SCR has bidirectional electrostatic discharge protection or anti-surge effect.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (4)
1. A bidirectional transient voltage suppressor for diode string assisted triggering of SCR is characterized in that: the bidirectional transient voltage suppressor comprises a P substrate (101), a deep N well (102), an N well (103), a P well (104), a first P + injection region (105), a first N + injection region (106), a second P + injection region (107), a second N + injection region (108), a third P + injection region (109), a third N + injection region (110) and a metal wire;
the surface area of the P substrate (101) is provided with a deep N well (102), the left edge of the P substrate (101) is connected with the left edge of the deep N well (102), and the right edge of the deep N well (102) is connected with the right edge of the P substrate (101);
an N well (103) and a P well (104) are sequentially arranged in the surface area of the deep N well (102) from left to right, the left side edge of the deep N well (102) is connected with the left side edge of the N well (103), the right side edge of the N well (103) is connected with the left side edge of the P well (104), and the right side edge of the P well (104) is connected with the right side edge of the deep N well (102);
a first P + injection region (105), a first N + injection region (106) and a second P + injection region (107) are sequentially arranged on the surface region of the N well (103) from left to right;
a second N + injection region (108), a third P + injection region (109) and a third N + injection region (110) are sequentially arranged on the surface region of the P well (104) from left to right;
the metal wire is used for connecting the injection region, and two electrodes are led out from the metal wire and used as two electrical stress terminals;
the connection mode of the metal wire and the injection region is as follows: the first P + injection region (105) is connected with a first metal (201), the first N + injection region (106) is connected with a second metal (202), the second P + injection region (107) is connected with a third metal (203), the second N + injection region (108) is connected with a fourth metal (204), the third P + injection region (109) is connected with a fifth metal (205), and the third N + injection region (110) is connected with a sixth metal (206);
the second metal (202) and the fifth metal (205) are both connected with a seventh metal (207);
the first metal (201) and the sixth metal (206) are both connected with the eighth metal (208), and a first electrode (209) is led out from the eighth metal (208) and used as a first electric stress terminal of the device;
the third metal (203) and the fourth metal (204) are both connected with the ninth metal (210), and a second electrode (211) is led out from the ninth metal (210) and used as a second electric stress terminal of the device;
when a first electrical stress terminal of the device is connected with a high potential and a second electrical stress terminal of the device is grounded, a diode D1 is formed by the first P + injection region (105) and the N well (103), a diode D2 is formed by the P well (104) and the second N + injection region (108), the diode D1 and the diode D2 form a first series connection path through the first N + injection region (106), the metal wire and the third P + injection region (109), a PNP tube T4 is formed by the first P + injection region (105), the N well (103) and the P well (104), an NPN tube T3 is formed by the N well (103), the P well (104) and the second N + injection region (108), and a first SCR structure is formed by the PNP tube T4 and the NPN tube T3;
when a first electrical stress terminal of the device is grounded, and a second electrical stress terminal is connected with a high potential, a diode D3 formed by a second P + injection region (107) and an N well (103) forms a diode D4 by a P well (104) and a third N + injection region (110), a diode D3 and the diode D4 form a second series path through a first N + injection region (106), the metal wire and the third P + injection region (109), an NPN tube T5 is formed by the N well (103), the P well (104) and the third N + injection region (110), a PNP tube T6 is formed by the second P + injection region (107), the N well (103) and the P well (104), and a PNP tube T5 and the NPN tube T6 form a second SCR structure.
2. The bi-directional transient voltage suppressor of diode string assisted-triggered SCR of claim 1, wherein: the PNP tube T1 is formed by the first P + injection region (105), the N well (103) and the second P + injection region (107), when the first series path is conducted, the PNP tube T1 is in an amplification state, the current discharge capacity of the device can be improved, and the robustness is enhanced.
3. The bi-directional transient voltage suppressor of diode string assisted-triggered SCR of claim 1, wherein: when the second series path is conducted, the NPN transistor T2 is in an amplification state, and the current leakage capability of the device and the robustness are improved, the NPN transistor T2 including the second N + injection region (108), the P-well (104), and the third N + injection region (110) is formed.
4. A bi-directional transient voltage suppressor of diode string assisted triggering SCR as recited in claim 1, 2 or 3 wherein: and positive and negative electrical stresses are applied between the two electrical stress terminals, the electrical characteristics of the device are the same, and the bidirectional transient voltage suppressor of the diode string for assisting in triggering the SCR has bidirectional electrostatic discharge protection or anti-surge function.
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| CN109449155A (en) * | 2018-11-16 | 2019-03-08 | 合肥博雅半导体有限公司 | A kind of static leakage circuit and device |
| CN110335866B (en) * | 2019-06-26 | 2021-09-24 | 电子科技大学 | Bidirectional low-trigger ESD (electro-static discharge) protection device based on nanoscale integrated circuit process |
| CN111725205B (en) * | 2019-07-18 | 2023-05-12 | 中国科学院上海微系统与信息技术研究所 | ESD protection device with diagonal bidirectional SCR structure |
| CN112420691B (en) * | 2020-11-26 | 2022-10-14 | 重庆广播电视大学重庆工商职业学院 | Distributed ESD device with embedded SCR structure |
| CN112864149B (en) * | 2021-01-08 | 2022-08-02 | 电子科技大学 | Low-voltage SCR device for ESD protection |
| CN113421924B (en) * | 2021-05-21 | 2024-01-09 | 西安理工大学 | Diode-triggered bidirectional SCR device |
| CN114156851A (en) * | 2021-11-30 | 2022-03-08 | 江南大学 | Multi-coupling triggering strong-robustness electrostatic surge overvoltage and overcurrent protection integrated circuit |
| CN114783995B (en) * | 2022-04-21 | 2023-04-25 | 电子科技大学 | High-maintenance voltage circulation SCR structure for ESD protection |
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| US6800906B2 (en) * | 2002-10-18 | 2004-10-05 | United Microelectronics Corp. | Electrostatic discharge protection circuit |
| US20060125054A1 (en) * | 2004-12-14 | 2006-06-15 | Electronics And Telecommunications Research Institute | Electrostatic discharge protection circuit using zener triggered silicon controlled rectifier |
| CN101826523B (en) * | 2010-04-14 | 2012-04-25 | 电子科技大学 | Silicon controlled rectifier electrostatic discharge protection circuit structure triggered by grid controlled diode |
| US9231403B2 (en) * | 2014-03-24 | 2016-01-05 | Texas Instruments Incorporated | ESD protection circuit with plural avalanche diodes |
| US20160204598A1 (en) * | 2015-01-12 | 2016-07-14 | United Microelectronics Corp. | Electrostatic discharge protection circuit and electrostatic discharge protection device |
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| 《ESD防护器件中SCR结构开启速度的优化与分析》;马艺珂 等;《固体电子学研究与进展》;20180425;第38卷(第2期);全文 * |
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