CN112864149B - Low-voltage SCR device for ESD protection - Google Patents
Low-voltage SCR device for ESD protection Download PDFInfo
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- CN112864149B CN112864149B CN202110024135.1A CN202110024135A CN112864149B CN 112864149 B CN112864149 B CN 112864149B CN 202110024135 A CN202110024135 A CN 202110024135A CN 112864149 B CN112864149 B CN 112864149B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Abstract
The invention belongs to the technical field of electrostatic protection, and provides a low-voltage unidirectional/bidirectional SCR device for ESD protection; compared with the traditional electrostatic protection device, the invention adopts a novel structural design to ensure that an auxiliary trigger path (forward/reverse) of the device comprises 3N +/P-WELL diodes, so that the direct current blocking capability of the device is enhanced, and thus, lower leakage current, lower static power consumption and more stable parasitic capacitance value than the traditional electrostatic protection device are obtained, and better electrostatic protection effect is obtained; compared with the existing low-power-consumption bidirectional SCR device for ESD protection, the low-power-consumption bidirectional SCR device has the advantages that the potential PNPN series-pass phenomenon in the structure of the device can be avoided by adopting a novel structural design, so that the phenomenon of steep increase of leakage current can not occur when the working voltage of the low-voltage bidirectional SCR device is 1.5V, namely the device can still realize effective ESD protection with lower power consumption when the working voltage is more than 1.5V and less than 1.8V.
Description
Technical Field
The invention belongs to the technical field of electrostatic protection, and particularly relates to a low-voltage unidirectional and bidirectional SCR device for ESD protection.
Background
With the continuous development of integrated circuit technology, chip damage caused by Electro-Static Discharge (ESD for short) events is more serious, and the reliability of semiconductor products is severely restricted; therefore, it is necessary to provide an effective on-chip ESD protection design for the chip; and, overall, the more advanced the manufacturing process, the greater the difficulty of the ESD protection engineering.
Among the many ESD protection devices available, the SCR (Silicon-Controlled Rectifier) has very high area efficiency and is widely used. While the direct-connected SCR (DCSCR) is widely used in the low-voltage field, the traditional bidirectional structure of which is shown in fig. 1, and the equivalent circuit of which is shown in fig. 2; in this structure, the forward auxiliary trigger path (from PAD1 to PAD2) is composed of lines 101, P +121, N120, N +122, lines 103, P +151, P150, N +152, and lines 102, and it can be seen that the forward auxiliary trigger path is a diode string including 2 diodes, i.e., a P +/N-WELL diode (a diode composed of P +121 and N120) and an N +/P-WELL diode (a diode composed of N +152 and P150); the inverted auxiliary trigger path (from PAD2 to PAD1) is composed of lines 105, P +132, N130, N +131, lines 106, P +172, P170, N +171, and lines 104. it can be seen that the inverted auxiliary trigger path is also a diode string, and the number of diodes included is 2, i.e., a P +/N-WELL diode (a diode composed of P +132 and N130) and an N +/P-WELL diode (a diode composed of N +171 and P170); the bidirectional structure can realize bidirectional protection, but has the problem of large leakage current, so that the static power consumption of the chip is greatly increased.
In view of the above problem, the inventor of the present invention discloses a bidirectional SCR device with low power consumption for ESD protection in the patent document with publication number CN111599806A, which has a structure as shown in fig. 3, wherein a forward auxiliary trigger path (from a first metal interconnection line 201 to a second metal interconnection line 202) is formed by a first metal interconnection line 201, a first heavily doped active region 241, a first N WELL region 240, a second heavily doped active region 242, a third metal interconnection line 203, a seventh heavily doped active region 261, a second P WELL region 260, a second N WELL region 270, a sixth heavily doped active region 272, a fourth metal interconnection line 204, a third heavily doped active region 251, a first P WELL region 250, a fourth heavily doped active region 252, and a second metal interconnection line 202, and the forward auxiliary trigger path at this time forms a diode string, and the number of diodes included therein is 3, that is a P +/N-WELL diode (the diode formed by the first active region and the first N WELL region 241), an N +/P-WELL diode (the diode formed by the fourth heavily doped active region 252 and the first P-WELL region 250), and a P-WELL/N-WELL diode (the diode formed by the second P-WELL region 260 and the second N-WELL region 270); the inverted auxiliary trigger path (from the second metal interconnection line 202 to the first metal interconnection line 201) is formed by the second metal interconnection line 202, a fifth heavily doped active region 271, a second N-well region 270, a sixth heavily doped active region 272, a fourth metal interconnection line 204, a third heavily doped active region 251, a first P-well region 250, a first N-well region 240, a second heavily doped active region 242, a third metal interconnection line 203, a seventh heavily doped active region 261, a second P-well region 260, an eighth heavily doped active region 262, and the first metal interconnection line 201. Also a diode string, which includes 3 diodes, i.e. a P +/N-WELL diode (diode formed by the fifth heavily doped active region 271 and the second N WELL region 270), a N +/P-WELL diode (diode formed by the eighth heavily doped active region 262 and the second P WELL region 260), and a P-WELL/N-WELL diode (diode formed by the first P WELL region 250 and the first N WELL region 240); it can be seen that, compared with the two auxiliary trigger paths in the conventional electrostatic protection device shown in fig. 1, both the forward auxiliary trigger path and the reverse auxiliary trigger path of the structure include one P-WELL/N-WELL diode, so that the dc blocking capability of the device is enhanced, and thus, lower leakage current and static power consumption can be obtained, and a better electrostatic protection effect can be obtained. However, the inventor of the present invention finds, in subsequent scientific research work, that a PNPN crosstalk phenomenon is potentially present in the low-power-consumption bidirectional SCR device structure of this structure, which causes a steep increase in leakage current when the operating voltage of the low-power-consumption bidirectional SCR device structure is 1.5V, and causes that the device cannot achieve low power consumption at an operating voltage of more than 1.5V, as shown in fig. 9.
Based on this, the present invention provides a low voltage unidirectional and bidirectional SCR device for ESD protection.
Disclosure of Invention
The present invention is directed to solve the above problems of the prior art, and an object of the present invention is to provide a low voltage unidirectional/bidirectional SCR device for ESD protection, so as to implement unidirectional/bidirectional ESD protection with small leakage current and stable capacitance. In order to realize the purpose, the invention adopts the technical scheme that:
a low voltage unidirectional SCR device for ESD protection, comprising:
a first conductive type substrate 210, a second conductive type deep buried layer 220 formed on the first conductive type substrate 210, a first second conductive type deep well region, a first conductive type deep well region 260, a second conductive type deep well region 240, a second first conductive type deep well region 250, and a third second conductive type deep well region formed on the deep buried layer 220 and adjoining in sequence;
a first heavily doped active region 241 of the first conductivity type and a first heavily doped active region 242 of the second conductivity type are sequentially arranged in the second deep well region 240 of the second conductivity type, a second heavily doped active region 251 of the first conductivity type and a second heavily doped active region 252 of the second conductivity type are sequentially arranged in the second deep well region 250 of the first conductivity type, and a third heavily doped active region 261 of the second conductivity type and a third heavily doped active region 262 of the first conductivity type are sequentially arranged in the first deep well region 260 of the first conductivity type; the first heavily doped active region 241 of the first conductivity type is electrically connected with the anode through a first metal interconnection 201, the first heavily doped active region 242 of the second conductivity type is electrically connected with the third heavily doped active region 262 of the first conductivity type through a third metal interconnection, the second heavily doped active region 251 of the first conductivity type is electrically connected with the third heavily doped active region 261 of the second conductivity type through a fourth metal interconnection, and the second heavily doped active region 252 of the second conductivity type is electrically connected with the cathode through a second metal interconnection 202.
A low voltage bi-directional SCR device for ESD protection, comprising: the anode of the first SCR device and the cathode of the second SCR device are connected to the same PAD together, and the cathode of the first SCR device and the anode of the second SCR device are connected to the same PAD together, namely the first SCR device and the second SCR device are opposite in direction; the structure of the first SCR device and the structure of the second SCR device are the same as the structure of the unidirectional SCR device in claim 1.
The invention has the beneficial effects that:
compared with the traditional electrostatic protection device, the low-voltage bidirectional/unidirectional SCR device for ESD protection adopts a novel structural design, so that an auxiliary trigger path (forward/reverse) of the device comprises 3N +/P-WELL diodes, and further the direct current blocking capability of the device is enhanced, thereby obtaining lower leakage current, lower static power consumption and more stable parasitic capacitance value than the traditional electrostatic protection device, and obtaining better electrostatic protection effect; compared with the existing low-power-consumption bidirectional SCR device for ESD protection, the low-power-consumption bidirectional SCR device has the advantages that the potential PNPN series-pass phenomenon in the structure of the device can be avoided by adopting a novel structural design, so that the phenomenon that the leakage current of the device is increased steeply when the working voltage of the low-voltage bidirectional SCR device is 1.5V is avoided, namely the device can still realize low-power-consumption ESD protection when the working voltage is more than 1.5V and less than 1.8V.
Drawings
Fig. 1 is a schematic structural diagram of a conventional electrostatic protection device.
Fig. 2 is an equivalent circuit diagram of fig. 6.
Fig. 3 is a schematic structural diagram of a conventional bidirectional SCR device with low power consumption for ESD protection.
Fig. 4 is a schematic top view of a low-voltage unidirectional SCR device for ESD protection in embodiment 1 of the present invention.
Fig. 5 is a schematic top view of a low-voltage bidirectional SCR device for ESD protection in embodiment 2 of the present invention.
Fig. 6 is an equivalent circuit diagram of the device of fig. 5.
Fig. 7 is a schematic cross-sectional view of the device of fig. 4 and 5 taken along line a-a'.
Fig. 8 is a schematic cross-sectional view of the device of fig. 5 taken along line B-B'.
Fig. 9 is a leakage current variation curve of the low-voltage bidirectional SCR device for ESD protection according to embodiment 2 of the present invention and the prior art.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Example 1
The present embodiment provides a low-voltage unidirectional SCR device 300 for ESD protection, which is schematically shown in fig. 4 in a top view, and in fig. 7 in a cross-sectional view along line a-a'; the low-voltage unidirectional SCR device is provided with an anode and a cathode, wherein the anode is electrically connected with PAD1, and the cathode is electrically connected with PAD 2; the method specifically comprises the following steps:
the deep buried layer comprises a P-type substrate 210, an N-type deep buried layer 220 formed on the P-type substrate 210, and a first N-type deep well region, a first P-type deep well region 260, a second N-type deep well region 240, a second P-type deep well region 250 and a third N-type deep well region which are formed on the deep buried layer 220 and are sequentially adjacent from left to right;
a first P-type heavily doped active region 241 and a first N-type heavily doped active region 242 are sequentially arranged in the second N-type deep well region 240 from left to right, a second P-type heavily doped active region 251 and a second N-type heavily doped active region 252 are sequentially arranged in the second P-type deep well region 250 from left to right, and a third N-type heavily doped active region 261 and a third P-type heavily doped active region 262 are sequentially arranged in the first P-type deep well region 260 from left to right; the first P-type heavily doped active region 241 is electrically connected with the anode through a first metal interconnection line 201, the first N-type heavily doped active region 242 is shorted with the third P-type heavily doped active region 262 through a third metal interconnection line, the second P-type heavily doped active region 251 is shorted with the third N-type heavily doped active region 261 through a fourth metal interconnection line, and the second N-type heavily doped active region 252 is electrically connected with the cathode through a second metal interconnection line 202; all adjacent heavily doped active regions are previously separated by STI.
Example 2
The present embodiment provides a low-voltage bidirectional SCR device 200 for ESD protection, which is schematically illustrated in a top view in fig. 5, a cross-sectional view along a-a 'line in fig. 7, and a cross-sectional view along a B-B' line in fig. 8, and specifically includes: the structure of the first SCR device and the second SCR device are the same as those of the unidirectional SCR device 300 in embodiment 1, except that the first SCR device and the second SCR device are placed in opposite directions in the transverse direction; more specifically, in this embodiment, the first SCR device is placed in the same direction as the unidirectional SCR device 300 in embodiment 1, the anode of the first SCR device is electrically connected to PAD1, and the cathode of the first SCR device is electrically connected to PAD2, the second SCR device is placed in the opposite direction to the unidirectional SCR device 300 in embodiment 1, the cathode of the second SCR device is electrically connected to PAD1, and the anode of the second SCR device is electrically connected to PAD 2;
still further, the second SCR device includes:
the deep buried layer 230 is formed on the P-type substrate 210, and the first N-type deep well region, the first P-type deep well region 290, the second N-type deep well region 270, the second P-type deep well region 280 and the third N-type deep well region which are adjacent in sequence from right to left are formed on the deep buried layer 230;
a first P-type heavily doped active region 271 and a first N-type heavily doped active region 272 are sequentially arranged in the second N-type deep well region 270 from right to left, a second P-type heavily doped active region 281 and a second N-type heavily doped active region 282 are sequentially arranged in the second P-type deep well region 280 from right to left, and a third N-type heavily doped active region 291 and a third P-type heavily doped active region 292 are sequentially arranged in the first P-type deep well region 290 from right to left; the first P-type heavily doped active region 271 is electrically connected with the anode through a sixth metal interconnection line 206, the first N-type heavily doped active region 272 is shorted with the third P-type heavily doped active region 292 through a seventh metal interconnection line 207, the second P-type heavily doped active region 281 is shorted with the third N-type heavily doped active region 291 through an eighth metal interconnection line 208, and the second N-type heavily doped active region 282 is electrically connected with the cathode through a fifth metal interconnection line 205; all adjacent heavily doped active regions are previously separated by STI.
In terms of operation principle, the equivalent circuit diagram of the low-voltage bidirectional SCR device 200 is shown in fig. 6, wherein the forward auxiliary trigger path (from PAD1 to PAD2) is formed by a first metal interconnection line 201, a first P-type heavily doped active region 241, a second N-type deep well region 240, a first N-type heavily doped active region 242, a third metal interconnection line 203, a third P-type heavily doped active region 262, a first P-type deep well region 260, a third N-type heavily doped active region 261, a fourth metal interconnection line 204, a second P-type heavily doped active region 251, a second P-type deep well region 250, a second N-type heavily doped active region 252, and a second metal interconnection line 202, and the forward auxiliary trigger path at this time forms a diode string, and the number of diodes included therein is 3, that is, i.e., a P +/N-LL heavily doped diode (the diode formed by the first P-type heavily doped active region 241 and the second N-type deep well region 240), an N +/P-WELL diode (diode formed by the second heavily doped N-type active region 252 and the second P-type deep WELL region 250), and an N +/P-WELL diode (diode formed by the third heavily doped N-type active region 261 and the first P-type deep WELL region 260); the reverse auxiliary trigger path (from PAD2 to PAD1) is composed of a sixth metal interconnection line 206, a first P-type heavily doped active region 271, a second N-type deep WELL region 270, a first N-type heavily doped active region 272, a seventh metal interconnection line 207, a third P-type heavily doped active region 292, a first P-type deep WELL region 290, a third N-type heavily doped active region 291, an eighth metal interconnection line 208, a second P-type heavily doped active region 281, a second P-type deep WELL region 280, a second N-type heavily doped active region 282, and a fifth metal interconnection line 205, and is also a diode string including 3 diodes, i.e., a P +/N-WELL diode (a diode composed of the first P-type heavily doped active region 271 and the second N-type deep WELL region 270), an N +/P-WELL diode (a diode composed of the second N-type active region 282 and the second P-type deep WELL region 280), and an N +/P-type heavily doped diode (a third N +/N-WELL region 280) A diode consisting of a source region 291 and a first P-type deep well region 290).
Therefore, the low-power-consumption bidirectional SCR device 200 for ESD protection provided by the present invention can achieve the same technical effect as the low-power-consumption bidirectional SCR device for ESD protection shown in fig. 3, and the forward auxiliary trigger path and the reverse auxiliary trigger path also include 3N +/P-WELL diodes, so that the dc blocking capability of the device is enhanced, thereby obtaining a lower leakage current, a lower static power consumption, and a more stable parasitic capacitance value than the conventional electrostatic protection device shown in fig. 1, and thus obtaining a better electrostatic protection effect; however, by the design of the novel structure in the invention, the potential PNPN crosstalk phenomenon in the low-power bidirectional SCR device for ESD protection as shown in fig. 3 can be avoided; the leakage current change curves of the low-voltage bidirectional SCR device, the low-power consumption bidirectional SCR device for ESD protection as shown in FIG. 3 and the conventional electrostatic protection device as shown in FIG. 1 are shown in FIG. 9, and it can be known from the graph that the low-voltage bidirectional SCR device in the invention does not have the phenomenon of steep increase of leakage current when the working voltage is 1.5V, so that the device in the invention can still realize low-power consumption ESD protection when the working voltage is more than 1.5V.
The present embodiment further provides an electrostatic discharge protection circuit, including: the low-power bidirectional SCR device for ESD protection 200 is connected between an I/O port of a chip and ground, and/or between an I/O port of a chip and a power supply terminal, and/or between a power supply terminal and ground.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (2)
1. A low voltage unidirectional SCR device for ESD protection, comprising:
a first conductive type substrate 210, a second conductive type deep buried layer 220 formed on the first conductive type substrate 210, a first second conductive type deep well region, a first conductive type deep well region 260, a second conductive type deep well region 240, a second first conductive type deep well region 250, and a third second conductive type deep well region formed on the deep buried layer 220 and adjoining in sequence;
a first heavily doped active region 241 of the first conductivity type and a first heavily doped active region 242 of the second conductivity type are sequentially arranged in the second deep well region 240 of the second conductivity type, a second heavily doped active region 251 of the first conductivity type and a second heavily doped active region 252 of the second conductivity type are sequentially arranged in the second deep well region 250 of the first conductivity type, and a third heavily doped active region 261 of the second conductivity type and a third heavily doped active region 262 of the first conductivity type are sequentially arranged in the first deep well region 260 of the first conductivity type; the first heavily doped active region 241 of the first conductivity type is electrically connected with the anode through a first metal interconnection 201, the first heavily doped active region 242 of the second conductivity type is electrically connected with the third heavily doped active region 262 of the first conductivity type through a third metal interconnection, the second heavily doped active region 251 of the first conductivity type is electrically connected with the third heavily doped active region 261 of the second conductivity type through a fourth metal interconnection, and the second heavily doped active region 252 of the second conductivity type is electrically connected with the cathode through a second metal interconnection 202.
2. A low voltage bi-directional SCR device for ESD protection, comprising: the anode of the first SCR device and the cathode of the second SCR device are connected to the same PAD together, and the cathode of the first SCR device and the anode of the second SCR device are connected to the same PAD together; the first SCR device and the second SCR device have the same structure, and the unidirectional SCR device of claim 1 has the same structure.
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| CN113838847B (en) * | 2021-09-02 | 2023-04-07 | 电子科技大学 | Bidirectional DCSCR device for low-voltage ESD protection |
| CN115050736B (en) * | 2022-06-10 | 2023-05-23 | 深圳市晶扬电子有限公司 | Electrostatic protection device for low-voltage technology and integral electrostatic protection method |
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