CN209374445U - A kind of two-way SCR semiconductor protection device of novel low trigger voltage - Google Patents
A kind of two-way SCR semiconductor protection device of novel low trigger voltage Download PDFInfo
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- CN209374445U CN209374445U CN201820078931.7U CN201820078931U CN209374445U CN 209374445 U CN209374445 U CN 209374445U CN 201820078931 U CN201820078931 U CN 201820078931U CN 209374445 U CN209374445 U CN 209374445U
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Abstract
The utility model provides a kind of two-way SCR semiconductor protection device of novel low trigger voltage, the static discharge for protecting between core circuit input/output terminal, positive power source terminal and negative power end comprising: a kind of substrate；The multiple P type trap zone domains and N-type trap region that are formed in above the substrate and the heavily doped region being formed on well region; two-way triode device and two-way SCR device are constituted by these well regions and doped region, two kinds of devices are connected between protected port with parallel way.The utility model is formed by that two-way SCR device structure is simple, and technique level is few, can be integrated in CMOS technology, BICMOS technique, in BCD technique；Lower full symmetric two-way trigger voltage can be obtained by adjusting the concentration of crucial injection region；Being formed by bidirectional semiconductor device, there are the paths of two high currents of releasing from input terminal to output end, and the Surge handling capability of device is improved under identical area.
Description
Technical field
The utility model belongs to Semiconductor Physics and electronic circuit technology field, and the ESD for being related to semiconductor integrated chip is protected
Protection circuit designing technique, in particular to a kind of two-way SCR semiconductor protection device structure.
Background technique
Semiconductor protection device is specially designed to the solid-state for absorbing ESD energy and protecting system from ESD damage
Element, the pulse current that it can quickly release on PAD, the voltage clamping of PAD in a lower level, to rise
To the effect of protection internal circuit.Currently used protection device is SCR structure, because having positive feedback loop, electric conduction inside it
Resistance is smaller, has very strong ESD electric current relieving capacity, while its maintenance voltage is very low, is hardly damaged late-class circuit.It is wherein two-way
SCR protection device is because the ESD electric current that can be provided simultaneously under positive pulse voltage mode (PS) and negative voltage pulse mode (NS) is let out
It puts access and is widely used in protection devices field.
Traditional two-way SCR protection its trigger voltage of device is formed by PN junction by two traps and determines, and generally more than ten volts
More than, it is difficult to it reduces, the operating voltage of small size CMOS integrated circuit gradually decreases now, and ESD trigger voltage often occurs
The trigger voltage of SCR has not yet been reached and the case where internal circuit is destroyed by ESD voltage, it is therefore desirable to apply low trigger voltage
Protective device.
Utility model content
To solve the above problems, the utility model provides a kind of two-way SCR semiconductor protection of novel low trigger voltage
Device, structured set triode and SCR two kinds of devices have the characteristics that trigger voltage is low and surge capacity is strong.
The technical solution that the utility model is taken are as follows:
A kind of two-way SCR semiconductor protection device of novel low trigger voltage, it is characterised in that: including substrate zone, well region
And heavily doped region；
The substrate zone is the first conductivity type substrate；
The well region is formed on substrate zone, is from left to right the second successively adjacent conduction type well region, and first
Conduction type well region, the second conduction type well region；
There are the second conduction type heavily doped region and the first conduction type heavily doped region in the second conduction type well region；
There are two the second conduction type heavily doped regions in the first conduction type well region；
First conduction type well region and its the second conduction type heavily doped region and the second conduction type heavily doped region of inside
Constitute two-way triode device；
The heavily doped region and the first conduction type well region of two the second conduction type well regions and its inside constitute two-way SCR device
Part；
The second conduction type heavily doped region and the first conduction type inside one the second conduction type well region is heavily doped
Miscellaneous area is connected as first electrode with a second conduction type heavily doped region inside the first conduction type well region；It is another
The second conduction type heavily doped region and the first conduction type heavily doped region inside a second conduction type well region with it is described
Another the second conduction type heavily doped region inside first conduction type well region, which is connected, is used as second electrode.
Preferably, the first conduction type is p-type, and the second conduction type is N-type.
Preferably, the substrate zone of the first conduction type is P type substrate, and resistivity is the 20 Ω .cm of Ω .cm~500, approximate
Eigen state, to reduce the parasitic capacitance of entire device.
Preferably, two-way triode is NPN, and emitter and collector is (inside the corresponding first conduction type well region
Two heavily doped regions) doping concentration be 5e18/cm2-1e21/cm2Between, base stage (the corresponding first conduction type well region)
Doping concentration is 1e16/cm2-1e19/cm2Between, implantation dosage and annealing by adjusting these three regions are adjustable whole
The trigger voltage of a protection device, trigger voltage can achieve less than or equal to 5V.Wherein the design of base area, which needs to trade off, considers to open
Close speed.
Preferably, two-way SCR is PNPNP structure, and the doping concentration of two the second conduction type well regions is 1e17/cm2-
1e19/cm2, inside is equipped with cathode short circuit pore structure, and two the second conduction type heavily doped regions can be with the first conductive type of trap
The heavily doped region in area uses identical process conditions.
Preferably, centered on the first conduction type well region, symmetrical structure is a kind of full symmetric two-way half
Conductor protects device, is formed by first electrode and second electrode and does not distinguish polarity in application.
When esd pulse electric current occurs in a termination electrode, the PN being formed by two-way triode is tied due to the higher meeting of concentration
Puncture first and fraction charge of releasing, with the increase of electric current, two thyristors in two-way SCR structure are gradually opened, it
Be interconnected to form positive feedback low impedance path, therefore the high current that can release rapidly, and maintain to arrive lower voltage level.?
Under same area, the utility model, which is formed by protection device, two effective accesses while charge of releasing, and Surge handling capability increases
By force.
Device architecture provided by the utility model does not increase process complexity compared with common two-way SCR, only exists
Heavily-doped implant area is increased in conventional SCR structure, parasitic components NPN is introduced, makes it have lower and symmetrically touch
Power generation pressure, since there are the Surge handling capabilities of two drain passageways, device to enhance, performance gets a promotion.The device is more suitable for answering
In low pressure IC protection system, can effectively it protect between core circuit input/output terminal, positive power source terminal and negative power end
Static discharge.
Detailed description of the invention
Fig. 1 is the two-way SCR semiconductor protection device the schematic diagram of the section structure of the novel low trigger voltage of the utility model.
Fig. 2 is the two-way SCR semiconductor protection device circuit diagram of the novel low trigger voltage of the utility model.
Fig. 3 is that forward direction ESD electric current is released path schematic diagram in the utility model embodiment.
Fig. 4 is that reversed ESD electric current is released path schematic diagram in the utility model embodiment.
Fig. 5 is the domain schematic diagram that the utility model embodiment Fig. 1 is realized.
Specific embodiment
Fig. 1 is a kind of one kind of the two-way SCR semiconductor protection device of the big surge capacity of low trigger voltage of the utility model
Implement embodiment, as shown, including P type substrate area 100；
Well region there are three setting in P type substrate area successively includes N-type well region 120, P type trap zone 130 and N-type trap from left to right
Area 120, three well regions are adjacent；
N-type heavily doped region 210 and p-type heavily doped region 220 are formed in N-type well region 120；Two are formed in P type trap zone 130
A N-type heavily doped region 230；N type heavily doped region 210 and p-type heavily doped region 220 are formed in N-type well region.
In conjunction with the circuit diagram of Fig. 2, N-type heavily doped region 230 and P type trap zone 130 constitute diode D1, P type trap zone 130
Diode D2 is constituted with another N-type heavily doped region 230, forms two-way triode NPN device, the device is two-way full symmetric, holds
It easily obtains lower trigger voltage and there is small negative resistance charactertistic.
In conjunction with the circuit diagram of Fig. 2, p-type heavily doped region 220, N-type well region 120 and P type well region 130 form triode
T1；N-type well region 120, P type trap zone 130 and N-type heavily doped region 230 form triode T2；P type trap zone 130, another N-type well region
120 and another p-type heavily doped region 220 formation triode T3, there are positive feedback effects to constitute two-way SCR device for three triodes
Part.The device is two-way full symmetric, trigger voltage having the same and has big rapid return characteristic.
Using the structure protection device when, PIN1 and PIN2 are not distinguished, and can be arbitrarily connected between two pins.
As shown in figure 3, when there is positive esd pulse to occur in PIN1 electrode and PIN2 electrode be grounded when, due to diode D1
There is higher impurity concentration, it can puncture prior to T1, and electric current reaches ground terminal by the positive of D2, and T1/T2/T3, which is in, at this time disconnects
State, as PIN1 voltage gradually rises, the electric current at the both ends D1 is also gradually increased, the emitter of triode T1 to two pole of base stage
Pipe is opened, and avalanche breakdown occurs for the diode of base stage to collector, and esd pulse electric current is released by the SCR structure that T1/T2 is formed
A lower voltage value is clamped to ground, and by PIN1.
As shown in figure 4, when there is negative sense esd pulse to occur in PIN2 electrode and PIN1 electrode be grounded when, due to diode D2
There is higher impurity concentration, it can reach ground terminal by the positive of D1 prior to T3 breakdown current, and T1/T2/T3, which is in, at this time disconnects
State, as PIN2 voltage gradually rises, the electric current at the both ends D2 is also gradually increased, and the emitter of triode T3 is opened to base stage,
To collector avalanche breakdown also occurs for base stage, and esd pulse electric current is just released to ground by the SCR structure that T3/T2 is formed, and
PIN1 is clamped to a lower current potential pressure value.
Therefore the protection device is triggered with NPN device, by two kinds of devices of NPN and SCR come leakage current, antisurge energy
Power enhancing.
The utility model is elaborated above, but described above, only the preferable embodiment of the utility model,
The range of the utility model implementation should not be limited.That is, all equivalence changes according to made by application scope of the utility model with
Modification etc., should all still fall in the patent covering scope of the utility model.
Claims (6)
1. a kind of two-way SCR semiconductor protection device of novel low trigger voltage, it is characterised in that: including substrate zone, well region and
Heavily doped region；
The substrate zone (100) is the first conductivity type substrate；
The well region is formed on substrate zone (100), is from left to right the second successively adjacent conduction type well region
(120), the first conduction type well region (130), the second conduction type well region (120)；
There are the second conduction type heavily doped region (210) and the first conduction type weight in the second conduction type well region (120)
Doped region (220)；There are two the second conduction type heavily doped regions (210) in the first conduction type well region (130)；
First conduction type well region (130) and its two the second conduction type heavily doped regions (210) of inside constitute two-way three pole
Tube device；
Two the second conduction type well regions (120) and its second internal conduction type heavily doped region (210), the first conductive-type
Type heavily doped region (220), constitutes two-way SCR device at the first conduction type well region (130)；
The second internal conduction type heavily doped region (210) of one the second conduction type well region (120), the first conduction type are heavily doped
Miscellaneous area (220) is connected as first electrode with a second conduction type heavily doped region (210)；Another second conductive type of trap
The second internal conduction type heavily doped region (210) of area (120), the first conduction type heavily doped region (220) and another second
Conduction type heavily doped region (210), which is connected, is used as second electrode.
2. the two-way SCR semiconductor protection device of novel low trigger voltage according to claim 1, which is characterized in that the
One conduction type is p-type, and the second conduction type is N-type.
3. the two-way SCR semiconductor protection device of novel low trigger voltage according to claim 1, which is characterized in that the
The substrate zone of one conduction type is P type substrate, and resistivity is 20 Ω of Ω .cm~500 .cm.
4. the two-way SCR semiconductor protection device of novel low trigger voltage according to claim 1, which is characterized in that double
It is NPN to triode, emitter and collector doping concentration is 5e18/cm2-1e21/cm2Between, base implant concentration is
1e16/cm2-1e19/cm2Between, pass through the second conduction type heavily doped region in the first conduction type well region (130) of control
(210) with the trigger voltage of the adjustable entire protection device of the concentration of the first conduction type well region (130), trigger voltage can be with
It is less than and is equal to 5V.
5. the two-way SCR semiconductor protection device of novel low trigger voltage according to claim 1, which is characterized in that double
It is PNPNP structure to SCR, the doping concentration of the second conduction type well region (120) is 1e17/cm2-1e19/cm2, inside is equipped with
Cathode short circuit pore structure.
6. the two-way SCR semiconductor protection device of novel low trigger voltage according to claim 1, which is characterized in that with
Centered on first conduction type well region (130), symmetrical structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820078931.7U CN209374445U (en) | 2018-01-17 | 2018-01-17 | A kind of two-way SCR semiconductor protection device of novel low trigger voltage |
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| CN201820078931.7U CN209374445U (en) | 2018-01-17 | 2018-01-17 | A kind of two-way SCR semiconductor protection device of novel low trigger voltage |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022912A (en) * | 2018-01-17 | 2018-05-11 | 上海长园维安微电子有限公司 | A kind of two-way SCR semiconductor protection devices of new low trigger voltage |
| CN112864149A (en) * | 2021-01-08 | 2021-05-28 | 电子科技大学 | Low-voltage SCR device for ESD protection |
-
2018
- 2018-01-17 CN CN201820078931.7U patent/CN209374445U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022912A (en) * | 2018-01-17 | 2018-05-11 | 上海长园维安微电子有限公司 | A kind of two-way SCR semiconductor protection devices of new low trigger voltage |
| CN112864149A (en) * | 2021-01-08 | 2021-05-28 | 电子科技大学 | Low-voltage SCR device for ESD protection |
| CN112864149B (en) * | 2021-01-08 | 2022-08-02 | 电子科技大学 | Low-voltage SCR device for ESD protection |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: Seven road 201202 Shanghai Pudong New Area Shiwan No. 1001 Patentee after: Shanghai Wei'an Semiconductor Co., Ltd Address before: 201202 Shanghai city Pudong New Area Town Road No. 1001 to seven Shiwan Building 2 Patentee before: Shanghai Changyuan Wayon Microelectronics Co., Ltd. |
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| CP03 | Change of name, title or address |