CN108899317A - A kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR - Google Patents
A kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR Download PDFInfo
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- CN108899317A CN108899317A CN201810746126.1A CN201810746126A CN108899317A CN 108899317 A CN108899317 A CN 108899317A CN 201810746126 A CN201810746126 A CN 201810746126A CN 108899317 A CN108899317 A CN 108899317A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Abstract
A kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR, belongs to electrostatic discharge protective and the antisurge field of integrated circuit, can be used for improving the electrostatic discharge protective or Surge handling capability of on piece IC and circuit system.The bidirectional transient voltage suppressor is mainly made of substrate P, deep N-well, N trap, p-well, the first injection region P+, the first injection region N+, the 2nd injection region P+, the 2nd injection region N+, the 3rd injection region P+, the 3rd injection region N+ and metal wire.The device makes device under forward and reverse electricity stress, it can be achieved that bi-directional ESD or electrical surge protection without hysteresis and strong robustness by combining diode string trigger voltage low and the advantages such as BJT or the strong robustness of SCR structure electrical over-stress.
Description
Technical field
The invention belongs to the electrostatic discharge protective of integrated circuit and antisurge fields, are related to a kind of electrostatic discharge protective or anti-
Surge device, and in particular to a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR can be used for improving on piece IC
With the system reliability of circuit system.
Background technique
Since IC and its related electronic products are in the links such as manufacture, assembling, test and application, may be put by electrostatic
The influence of electric (ESD), transient voltage or current surge phenomenon keep circuit function or system stability weakened or destroy, because
This, the research of ESD protection and antisurge is particularly important in semiconductor and electronic engineering application.ESD or surge phenomenon are to its people
The destruction and loss that economy generates, have caused the close attention and attention of domestic and international Electronics Engineer and scientific research personnel in recent years.
Research and the Transient Voltage Suppressor for designing effective ESD protection and antisurge, have very national economy and social development
Important scientific research economic value.
For the ESD protection or antisurge of low-voltage circuit especially radio circuit, most efficient ESD protection or antisurge
Device is to guarantee that device has a lower trigger voltage under the premise of occupying minimum chip area, lesser capacitor, more by force
Electric current relieving capacity and electrical over-stress robustness.Again since in the port some signal I/O, transient state electric signal usually there is electricity to answer
The features such as power direction is uncertain, the unidirectional ESD protection of tradition or antisurge device have biggish under the effect of reversed electric stress
Leakage current and weaker voltage clamping ability.Therefore, the protection of design bi-directional ESD or antisurge device, not only can satisfy
The ESD protection or antisurge demand of the special port I/O, moreover it is possible under the premise of not increasing device area, realize ESD protection or anti-
The highest efficiency ratio of surge.In the ESD protection of existing low-voltage circuit or antisurge application field, diode string is because having touching
The flexible controllable feature of power generation pressure, application are wider.But the robustness of diode string is weaker, ESD protection or Surge handling capability compared with
Difference.Can silicon control (SCR) be a kind of ESD protection or antisurge device with larger potential value currently received significant attention,
Different from diode string, it has heavy current relieving capacity.However, SCR, which but has high trigger voltage low-dimensional, holds voltage characteristic, deposit
In biggish latch risk.The present invention provides a kind of designs of the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR
Method and its manufacturing theory, by between the voltage clamp effect in two Diode series paths and multiple parasitism BJT just
Feedback effect is, it can be achieved that ESD protection or antisurge function without hysteresis and strong robustness.In addition, device of the present invention is forward and reverse
Under electricity stress, identical electrology characteristic can be presented, have the function of bi-directional ESD protection or antisurge.With traditional devices phase
Than device of the present invention can substantially save chip area, effectively improve unit area of device during ESD protection or antisurge
Efficiency.
Summary of the invention
For diode robustness is weaker and SCR device trigger voltage is higher and it is anti-not to be suitable for the ESD of low-pressure field
The problems such as shield or antisurge, the present invention devises the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR a kind of, utilizes
Diode triggered voltage is controllable and the characteristics of without hysteresis, and the advantages of combine the electrical over-stress strong robustness of BJT or SCR, can be
Under the premise of not increasing device area, the trigger voltage of device is reduced, enhances device robustness.Meanwhile device of the present invention can be
Under forward and reverse electricity stress, being formed, there is the electric current of identical electrology characteristic to release path, realize bi-directional ESD or transient state wave
Gush protection.
The invention is realized by the following technical scheme：
A kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR, it is characterised in that：Mainly include substrate P,
Deep N-well, N trap, p-well, the first injection region P+, the first injection region N+, the 2nd injection region P+, the 2nd injection region N+, the 3rd P+ injection
Area, the 3rd injection region N+ and metal wire；
Wherein, it being equipped with deep N-well in the surface region of substrate P, the left side edge of substrate P is connected with the left side edge of deep N-well,
The right side edge of deep N-well is connected with the right side edge of substrate P；
It is successively arranged N trap and p-well, the left side edge of deep N-well and the left side of N trap from left to right in the surface region of deep N-well
Edge is connected, and the right side edge of N trap is connected with the left side edge of p-well, and the right side edge of p-well is connected with the right side edge of deep N-well；
It is successively arranged the first injection region P+, the first injection region N+ and the 2nd P+ injection from left to right in the surface region of N trap
Area；
It is successively arranged the 2nd injection region N+, the 3rd injection region P+, the 3rd N+ injection from left to right in the surface region of p-well
Area；
The metal wire draws two electrodes for connecting injection region from metal wire, as two electricity stress
Terminal；
The connection type of the metal wire and injection region is：First injection region P+ is connected with the first metal, the first N+ injection
Area is connected with the second metal, and the 2nd injection region P+ is connected with third metal, and the 2nd injection region N+ is connected with the 4th metal, the 3rd P+
Injection region is connected with fifth metal, and the 3rd injection region N+ is connected with the 6th metal；
Second metal and fifth metal are connected with the 7th metal；
First metal and the 6th metal are connected with the 8th metal, first electrode are drawn from the 8th metal, as device
First electricity stress terminal；
Third metal and the 4th metal are connected with the 9th metal, second electrode are drawn from the 9th metal, as device
Second electricity stress terminal.
Advantageous effects of the invention are：
(1) in device of the present invention, when the first electricity stress terminal of device connects high potential, the second electricity stress terminal ground connection
When, diode D1 is constituted by the first injection region P+ and N trap, is made of diode D2 p-well and the 2nd injection region N+, diode D1 with
Diode D2 forms the first tandem paths by the first injection region N+, the metal wire and the 3rd injection region P+, is infused by the first P+
Enter area, N trap and p-well and constitute PNP pipe T4, NPN pipe T3, PNP pipe T4 and NPN pipe T3 are made of N trap, p-well and the 2nd injection region N+
The first SCR structure is formed, under electricity stress, first the first SCR structure of tandem paths auxiliary triggering can reduce device
Trigger voltage.
(2) in device of the present invention, when the first electricity stress terminal of device is grounded, the second electricity stress terminal connects high potential
When, the diode D3 being made of the 2nd injection region P+ and N trap forms diode D4, diode D3 by p-well and the 3rd injection region N+
The second tandem paths is formed by the first injection region N+, the metal wire and the 3rd injection region P+ with diode D4, by N trap, p-well
NPN pipe T5 is constituted with the 3rd injection region N+, PNP pipe T6, PNP pipe T5 and NPN pipe T6 are made of the 2nd injection region P+, N trap and p-well
The second SCR structure is formed, under electricity effect, second the second SCR structure of tandem paths auxiliary triggering can reduce the triggering of device
Voltage.
(3) in device of the present invention, PNP pipe T1 is constituted by the first injection region P+, N trap and the 2nd injection region P+, when the first string
When joining path conducting, PNP pipe T1 is in magnifying state, can improve the electric current relieving capacity of device, enhances robustness.
(4) in device of the present invention, the NPN pipe T2 being made of the 2nd injection region N+, p-well and the 3rd injection region N+, when second
When tandem paths is connected, NPN pipe T2 is in magnifying state, can improve the electric current relieving capacity of device, enhances robustness.
(5) in device of the present invention, apply forward and reverse electricity stress, the electricity of device between two electricity stress terminals
Characteristic is identical, and there is the bidirectional transient voltage suppressor of the diode string auxiliary triggering SCR bidirectional ESD to protect or resist
Surge effect.
Detailed description of the invention
Fig. 1 is device architecture sectional view of the invention；
Fig. 2 is device metal line graph of the invention；
Fig. 3 is equivalent circuit diagram of the device of the present invention under positive electricity stress；
Fig. 4 is equivalent circuit diagram of the device of the present invention under reversed electricity stress.
In figure：101P substrate；102 deep N-wells；103N trap；104P trap；105 the oneth injection regions P+；106 the oneth injection regions N+；
107 the 2nd injection regions P+；108 the 2nd injection regions N+；109 the 3rd injection regions P+；110 the 3rd injection regions N+；201 first metals；
202 second metals；203 third metals；204 the 4th metals；205 fifth metals；206 the 6th metals；207 the 7th metals；208
Eight metals；209 the 9th metals；210 the tenth metals；211 the 11st metals.
Specific embodiment
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments：
The present invention is special by low in conjunction with diode string trigger voltage and controllable and SCR structure electrical over-stress strong robustness etc.
Sign, devises the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR a kind of.Device of the present invention is in forward and reverse electricity
Under stress, it can be formed with strong robustness and be released path without hysteresis characteristic electric current, realize that bi-directional ESD or electrical surge are anti-
Shield.
A kind of bidirectional transient voltage suppressor proposed by the present invention, device architecture section are as shown in Figure 1, it is characterised in that：
It mainly include substrate P 101, deep N-well 102, N trap 103, p-well 104, the first injection region P+ 105, the first injection region N+ 106, the 2nd P
+ injection region 107, the 2nd injection region N+ 108, the 3rd injection region P+ 109, the 3rd injection region N+ 110 and metal wire；
Wherein, deep N-well 102, left side edge and the deep N-well 102 of substrate P 101 are equipped in the surface region of substrate P 101
Left side edge is connected, and the right side edge of deep N-well 102 is connected with the right side edge of substrate P 101；
It is successively arranged N trap 103 and p-well 104, the left side edge of deep N-well 102 from left to right in the surface region of deep N-well 102
It is connected with the left side edge of N trap 103, the right side edge of N trap 103 is connected with the left side edge of p-well 104, the right edge of p-well 104
Edge is connected with the right side edge of deep N-well 102；
It is successively arranged the first injection region P+ 105, the first injection region N+ 106 and from left to right in the surface region of N trap 103
Two injection regions P+ 107；
It is successively arranged the 2nd injection region N+ 108, the 3rd injection region P+ 109, from left to right in the surface region of p-well 104
Three injection regions N+ 110；
The metal wire draws two electrodes for connecting injection region from metal wire, as two electricity stress
Terminal.
A kind of bidirectional transient voltage suppressor proposed by the present invention, device metal line as shown in Fig. 2, the metal wire with
The connection type of injection region is：First injection region P+ 105 is connected with the first metal 201, the first injection region N+ 106 and the second metal
202 are connected, and the 2nd injection region P+ 107 is connected with third metal 203, and the 2nd injection region N+ 108 is connected with the 4th metal 204, the
Three injection regions P+ 109 are connected with fifth metal 205, and the 3rd injection region N+ 110 is connected with the 6th metal 206；
Second metal 202 and fifth metal 205 are connected with the 7th metal 207；
First metal 201 and the 6th metal 206 are connected with the 8th metal 208, draw first electrode from the 8th metal 208
209, the first electricity stress terminal as device；
Third metal 203 and the 4th metal 204 are connected with the 9th metal 210, draw second electrode from the 9th metal 210
211, the second electricity stress terminal as device.
A kind of bidirectional transient voltage suppressor proposed by the present invention, the equivalent circuit under positive electricity stress is as schemed
Shown in 3, when the first electricity stress terminal of device connects high potential, and the second electricity stress terminal is grounded, by the first injection region P+
105 and N trap 103 constitutes diode D1, constitutes diode D2, diode D1 and two poles by p-well 104 and the 2nd injection region N+ 108
Pipe D2 forms the first tandem paths by the first injection region N+ 106, the metal wire and the 3rd injection region P+ 109, when electricity is answered
When power reaches 1.4V, the first tandem paths is opened.Meanwhile by the first injection region P+ 105, N trap 103 and the 2nd injection region P+ 107
PNP pipe T1, the NPN pipe T2 being made of the 2nd injection region N+ 108, p-well 104 and the 3rd injection region N+ 110 are constituted, by N trap 103, P
It NPN pipe T3 that trap 104 and the 2nd injection region N+ 108 are constituted and is made of the first injection region P+ 105, N trap 103 and p-well 104
PNP pipe T4 begins operating in magnifying state, and the electric current relieving capacity of device can be improved.Wherein by PNP pipe T4 and NPN pipe T3 structure
At the first SCR structure, be conducive to the robustness for further enhancing device.
A kind of bidirectional transient voltage suppressor proposed by the present invention, the equivalent circuit under reversed electricity stress is as schemed
Shown in 4, when the first electricity stress terminal of device is grounded, when the second electricity stress terminal connects high potential, by the 2nd injection region P+
The 107 diode D3 constituted with N trap 103, form diode D4, diode D3 and two by p-well 104 and the 3rd injection region N+ 110
Pole pipe D4 forms the second tandem paths by the first injection region N+ 106, the metal wire and the 3rd injection region P+ 109, works as electricity
When stress reaches 1.4V, the second tandem paths is opened.Meanwhile by the first injection region P+ 105, N trap 103 and the 2nd injection region P+
107 constitute PNP pipe T1, the NPN pipe T2 being made of the 2nd injection region N+ 108, p-well 104 and the 3rd injection region N+ 110, by N trap
103, p-well 104 and the 3rd injection region N+ 110 are constituted NPN pipe T5 and by the 2nd injection region P+ 107, N trap 103 and p-well 104
The PNP pipe T6 of composition begins operating in magnifying state, and the electric current relieving capacity of device can be improved.Wherein by PNP pipe T5 and NPN
The second SCR structure that pipe T6 is constituted, is conducive to the robustness for further enhancing device.
Apply forward and reverse electricity stress, the electricity of device between the first electricity stress terminal and the second electricity stress terminal
It is identical to learn characteristic, the bidirectional transient voltage suppressor of the diode string auxiliary triggering SCR have bidirectional ESD protect or
Antisurge effect.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (9)
1. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR, it is characterised in that：Bidirectional transient voltage suppression
Device processed includes substrate P (101), deep N-well (102), N trap (103), p-well (104), the first injection region P+ (105), the first N+ injection
Area (106), the 2nd injection region P+ (107), the 2nd injection region N+ (108), the 3rd injection region P+ (109), the 3rd injection region N+
(110) and metal wire；
Wherein, deep N-well (102) are equipped in the surface region of substrate P (101), the left side edge and deep N-well of substrate P (101)
(102) left side edge is connected, and the right side edge of deep N-well (102) is connected with the right side edge of substrate P (101)；
It is successively arranged N trap (103) and p-well (104), the left side of deep N-well (102) from left to right in the surface region of deep N-well (102)
Edge is connected with the left side edge of N trap (103), and the right side edge of N trap (103) is connected with the left side edge of p-well (104), p-well
(104) right side edge is connected with the right side edge of deep N-well (102)；
The surface region of N trap (103) be successively arranged from left to right the first injection region P+ (105), the first injection region N+ (106) and
2nd injection region P+ (107)；
The surface region of p-well (104) be successively arranged from left to right the 2nd injection region N+ (108), the 3rd injection region P+ (109),
3rd injection region N+ (110)；
The metal wire draws two electrodes for connecting injection region from metal wire, as two electricity stress terminals.
2. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as described in claim 1, feature exist
In：The connection type of the metal wire and injection region is：First injection region P+ (105) is connected with the first metal (201), the first N+
Injection region (106) is connected with the second metal (202), and the 2nd injection region P+ (107) is connected with third metal (203), the 2nd N+ note
Enter area (108) to be connected with the 4th metal (204), the 3rd injection region P+ (109) is connected with fifth metal (205), the 3rd N+ injection
Area (110) is connected with the 6th metal (206)；
Second metal (202) and fifth metal (205) are connected with the 7th metal (207)；
First metal (201) and the 6th metal (206) are connected with the 8th metal (208), draw first from the 8th metal (208)
Electrode (209), the first electricity stress terminal as device；
Third metal (203) and the 4th metal (204) are connected with the 9th metal (210), draw second from the 9th metal (210)
Electrode (211), the second electricity stress terminal as device.
3. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as claimed in claim 2, feature exist
In：When the first electricity stress terminal of device connects high potential, and the second electricity stress terminal is grounded, by the first injection region P+
(105) and N trap (103) constitutes diode D1, constitutes diode D2, diode by p-well (104) and the 2nd injection region N+ (108)
D1 and diode D2 form first by the first injection region N+ (106), the metal wire and the 3rd injection region P+ (109) and connect road
Diameter constitutes PNP pipe T4 by the first injection region P+ (105), N trap (103) and p-well (104), by N trap (103), p-well (104) and
Two injection regions N+ (108) constitute NPN pipe T3, PNP pipe T4 and NPN pipe T3 and form the first SCR structure, under electricity stress,
First the first SCR structure of tandem paths auxiliary triggering, can reduce the trigger voltage of device.
4. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as claimed in claim 2, feature exist
In：When the first electricity stress terminal of device is grounded, when the second electricity stress terminal connects high potential, by the 2nd injection region P+
(107) the diode D3 constituted with N trap (103) forms diode D4, two poles by p-well (104) and the 3rd injection region N+ (110)
Pipe D3 forms second by the first injection region N+ (106), the metal wire and the 3rd injection region P+ (109) with diode D4 and connects
Path constitutes NPN pipe T5 by N trap (103), p-well (104) and the 3rd injection region N+ (110), by the 2nd injection region P+ (107), N
Trap (103) and p-well (104) constitute PNP pipe T6, PNP pipe T5 and NPN pipe T6 and form the second SCR structure, under electricity effect, the
Two the second SCR structures of tandem paths auxiliary triggering, can reduce the trigger voltage of device.
5. the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as described in claim 1,2,3 or 4 a kind of,
It is characterized in that：PNP pipe T1 is constituted by the first injection region P+ (105), N trap (103) and the 2nd injection region P+ (107), when the first string
When joining path conducting, PNP pipe T1 is in magnifying state, can improve the electric current relieving capacity of device, enhances robustness.
6. the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as described in claim 1,2,3 or 4 a kind of,
It is characterized in that：The NPN pipe T2 being made of the 2nd injection region N+ (108), p-well (104) and the 3rd injection region N+ (110), when second
When tandem paths is connected, NPN pipe T2 is in magnifying state, can improve the electric current relieving capacity of device, enhances robustness.
7. the bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as described in claim 1,2,3 or 4 a kind of,
It is characterized in that：Applying forward and reverse electricity stress between two electricity stress terminals, the electrology characteristic of device is identical, and described two
The bidirectional transient voltage suppressor of pole pipe string auxiliary triggering SCR has bidirectional ESD protection or antisurge effect.
8. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as claimed in claim 5, feature exist
In：Apply forward and reverse electricity stress between two electricity stress terminals, the electrology characteristic of device is identical, the diode string
The bidirectional transient voltage suppressor of auxiliary triggering SCR has bidirectional ESD protection or antisurge effect.
9. a kind of bidirectional transient voltage suppressor of diode string auxiliary triggering SCR as claimed in claim 6, feature exist
In：Apply forward and reverse electricity stress between two electricity stress terminals, the electrology characteristic of device is identical, the diode string
The bidirectional transient voltage suppressor of auxiliary triggering SCR has bidirectional ESD protection or antisurge effect.
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| CN110335866A (en) * | 2019-06-26 | 2019-10-15 | 电子科技大学 | A kind of two-way low triggering ESD protective device based on nanometer-grade IC technique |
| CN111725205A (en) * | 2019-07-18 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | ESD protection device of diagonal line type bidirectional SCR structure |
| CN112420691A (en) * | 2020-11-26 | 2021-02-26 | 重庆广播电视大学重庆工商职业学院 | Distributed ESD device with embedded SCR structure |
| CN112864149A (en) * | 2021-01-08 | 2021-05-28 | 电子科技大学 | Low-voltage SCR device for ESD protection |
| CN113421924A (en) * | 2021-05-21 | 2021-09-21 | 西安理工大学 | Diode-triggered bidirectional SCR device |
| CN114156851A (en) * | 2021-11-30 | 2022-03-08 | 江南大学 | Multi-coupling triggering strong-robustness electrostatic surge overvoltage and overcurrent protection integrated circuit |
| CN114783995A (en) * | 2022-04-21 | 2022-07-22 | 电子科技大学 | High-maintenance voltage circulating current SCR structure for ESD protection |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109449155A (en) * | 2018-11-16 | 2019-03-08 | 合肥博雅半导体有限公司 | A kind of static leakage circuit and device |
| CN110335866B (en) * | 2019-06-26 | 2021-09-24 | 电子科技大学 | Bidirectional low-trigger ESD (electro-static discharge) protection device based on nanoscale integrated circuit process |
| CN110335866A (en) * | 2019-06-26 | 2019-10-15 | 电子科技大学 | A kind of two-way low triggering ESD protective device based on nanometer-grade IC technique |
| CN111725205A (en) * | 2019-07-18 | 2020-09-29 | 中国科学院上海微系统与信息技术研究所 | ESD protection device of diagonal line type bidirectional SCR structure |
| CN111725205B (en) * | 2019-07-18 | 2023-05-12 | 中国科学院上海微系统与信息技术研究所 | ESD protection device with diagonal bidirectional SCR structure |
| CN112420691A (en) * | 2020-11-26 | 2021-02-26 | 重庆广播电视大学重庆工商职业学院 | Distributed ESD device with embedded SCR structure |
| CN112420691B (en) * | 2020-11-26 | 2022-10-14 | 重庆广播电视大学重庆工商职业学院 | Distributed ESD device with embedded SCR structure |
| CN112864149B (en) * | 2021-01-08 | 2022-08-02 | 电子科技大学 | Low-voltage SCR device for ESD protection |
| CN112864149A (en) * | 2021-01-08 | 2021-05-28 | 电子科技大学 | Low-voltage SCR device for ESD protection |
| CN113421924A (en) * | 2021-05-21 | 2021-09-21 | 西安理工大学 | Diode-triggered bidirectional SCR device |
| CN113421924B (en) * | 2021-05-21 | 2024-01-09 | 西安理工大学 | Diode-triggered bidirectional SCR device |
| CN114156851A (en) * | 2021-11-30 | 2022-03-08 | 江南大学 | Multi-coupling triggering strong-robustness electrostatic surge overvoltage and overcurrent protection integrated circuit |
| CN114783995A (en) * | 2022-04-21 | 2022-07-22 | 电子科技大学 | High-maintenance voltage circulating current SCR structure for ESD protection |
| CN114783995B (en) * | 2022-04-21 | 2023-04-25 | 电子科技大学 | High-maintenance voltage circulation SCR structure for ESD protection |
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