CN108857133B - 安装构造体 - Google Patents
安装构造体 Download PDFInfo
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- CN108857133B CN108857133B CN201810370341.6A CN201810370341A CN108857133B CN 108857133 B CN108857133 B CN 108857133B CN 201810370341 A CN201810370341 A CN 201810370341A CN 108857133 B CN108857133 B CN 108857133B
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000000919 ceramic Substances 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims description 45
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000008646 thermal stress Effects 0.000 abstract description 10
- 238000007747 plating Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 16
- 230000035882 stress Effects 0.000 description 10
- 239000011888 foil Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011104 metalized film Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910020938 Sn-Ni Inorganic materials 0.000 description 2
- 229910008937 Sn—Ni Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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Abstract
本发明在具有大面积的接合的安装构造体中,提供一种具有能够耐受由于基于反复温度变化的热应力而产生的龟裂的进展的接合的安装构造体。安装构造体是通过层叠体来将陶瓷基板的陶瓷基板电极与金属基板的金属基板电极接合的安装构造体,层叠体从陶瓷基板电极向金属基板电极,按照第1界面层、第1焊料接合部、第2界面层、第1缓冲件电极、缓冲件、第2缓冲件电极、第3界面层、第2焊料接合部以及第4界面层的顺序而被层叠,层叠体的厚度为30μm以上且100μm以下,第1焊料接合部的厚度与第2焊料接合部的厚度的差为25%以内,第1焊料接合部与缓冲件的弹性率的差以及第1焊料接合部与缓冲件的线膨胀系数的差分别为62%以内。
Description
技术领域
本发明涉及一种LED(Light Emitting Diode)、功率设备等设备中使用的、具有2个部件通过金属材料而被接合的构造的安装构造体。
背景技术
在伴随着LED等的发热的设备中,以产生的热的散热为目的,为了从搭载有元件的基板向散热部的热输送,存在具有将基板与散热部的两个部件间接合的安装构造的设备。
近年来,在LED等的设备中,用于大输出化的发热量变大。因此,更需要高效地进行散热。为了高效地进行散热,安装构造体的部件间的接合部的大面积化正在进展。通过大面积化,能够增大释放热量的路径,因此能够进行更大输出下的动作。
被用于安装构造体的接合部的接合件由于能够进行低温下的接合,因此焊料材料被广泛使用。
在这种安装构造体的动作时,由于伴随着基于发热的温度变化,因此在两个部件的材质不同的情况下,产生温度变化时部件间的线膨胀系数差所导致的热应力、热变形。
但是,通过接合部的大面积,热变形以及热应力变大,因此存在接合部产生反复温度变化的情况下焊料接合部不能承受并产生龟裂的问题。龟裂的产生带来散热性的降低、接合强度的降低,因此在超过□边长10mm四方的大面积的接合部中也需要能够承受因反复温度变化引起的龟裂进展的安装构造体。
因此,作为现有的难以产生龟裂的进展的安装构造体,存在如下的安装构造体:陶瓷基板具备金属化膜,金属支承体经由应力缓和件而与金属化膜连接,金属化膜与应力缓和件之间通过第1接合件来连接,应力缓和件与金属支承体之间通过第2接合件来连接,第1接合件比上述第2接合件厚(例如,参照专利文献1。)。
在先技术文献
专利文献
专利文献1:专利第2566341号公报
但是,在专利文献1所述的安装构造体中,需要第1接合件比第2接合件厚,由于第1接合件与第2接合件的润湿性的差,在安装时,陶瓷基板容易倾斜。在LED等的设备中,由于该陶瓷基板的倾斜对光的放射方向有影响,因此成为问题。此外,在应力缓和件与第1、第2接合件的机械性物性不同的情况下,由于产生向第1、第2接合件的应力集中,因此容易产生裂缝,特别是在接合部的大面积化的情况下,其倾向变得显著。特别地,在专利文献1所述的安装构造体中,由于对第1、第2接合部使用耐力较小的Sn-Pb系的焊料来进行实施,因此难以抑制裂缝的进展。
发明内容
本发明解决以往的课题,其目的在于,提供一种即使在大面积的接合中也能够耐较大的热应力并且能耐基于反复温度变化的龟裂进展的安装构造体。
为了实现上述课题,本发明所涉及的安装构造体是通过层叠体来将陶瓷基板的陶瓷基板电极与金属基板的金属基板电极接合的安装构造体,所述层叠体从所述陶瓷基板电极向所述金属基板电极,按照第1界面层、第1焊料接合部、第2界面层、第1缓冲件电极、缓冲件、第2缓冲件电极、第3界面层、第2焊料接合部以及第4界面层的顺序而被层叠,所述层叠体的厚度为30μm以上且100μm以下,所述第1焊料接合部的厚度与所述第2焊料接合部的厚度的差为25%以内,所述第1焊料接合部与所述缓冲件的弹性率的差以及所述第1焊料接合部与所述缓冲件的线膨胀系数的差分别为62%以内。
根据本发明所涉及的安装构造体,通过使第1、第2焊料接合部的厚度同等,从而两者的润湿力(润湿性)的差几乎没有,能够在不倾斜的情况下接合陶瓷基板。此外,由于第1、第2焊料接合部与缓冲件的弹性率、线膨胀系数的差接近,因此不产生应力集中,能够通过稳固的Au-20Sn的焊料接合部来进行接合,即使在严酷的温度环境下也能够提高耐热疲劳特性。
附图说明
图1是本实施方式1所涉及的安装构造体的从第1焊料接合部到第2焊料接合部的相对于厚度方向平行的剖视图。
图2是将本实施方式1所涉及的安装构造体接合之前的、从第1焊料到第2焊料的相对于厚度方向平行的剖视图。
-符号说明-
101 陶瓷基板
102 陶瓷基板电极
103 界面层
104 第1焊料接合部
106 第1缓冲件电极
107 缓冲件
108 第2缓冲件电极
110 第2焊料接合部
112 金属基板电极
113 金属基板
114 安装构造体
115 第1焊料
116 第2焊料
117 层叠体
具体实施方式
第1方式所涉及的安装构造体是通过层叠体来将陶瓷基板的陶瓷基板电极与金属基板的金属基板电极接合的安装构造体,
所述层叠体从所述陶瓷基板电极向所述金属基板电极,按照第1界面层、第1焊料接合部、第2界面层、第1缓冲件电极、缓冲件、第2缓冲件电极、第3界面层、第2焊料接合部以及第4界面层顺序而被层叠,
所述层叠体的厚度为30μm以上且100μm以下,所述第1焊料接合部的厚度与所述第2焊料接合部的厚度的差为25%以内,所述第1焊料接合部与所述缓冲件的弹性率的差以及所述第1焊料接合部与所述缓冲件的线膨胀系数的差分别为62%以内。
第2方式所涉及的安装构造体在上述第1方式中,也可以所述第1焊料接合部与所述缓冲件的弹性率的差以及所述第1焊料接合部与所述缓冲件的线膨胀系数的差分别为20%以内。
第3方式所涉及的安装构造体在上述第1或者第2方式中,也可以所述第1焊料接合部以及所述第2焊料接合部是Au-20Sn。
第4方式所涉及的安装构造体在上述第1至第3的任意一个方式中,也可以所述缓冲件是Cu、Al、Ag的任意一个。
第5方式所涉及的安装构造体在上述第1至第4的任意一个方式中,也可以所述陶瓷基板是AlN。
第6方式所涉及的安装构造体在上述第1至第5的任意一个方式中,也可以所述金属基板是Cu。
以下,参照附图来对实施方式所涉及的安装构造体进行说明。另外,附图中针对实质相同的部件,赋予相同的符号。
(实施方式1)
图1是实施方式1所涉及的安装构造体114中的从第1焊料接合部104到第2焊料接合部110的相对于厚度方向平行的方向的剖视图。
本实施方式1中的安装构造体114是通过层叠体117来将陶瓷基板101的陶瓷基板电极102与金属基板113的金属基板电极112接合的安装构造体。层叠体117从陶瓷基板电极102向金属基板电极112,按照第1界面层103-1、第1焊料接合部104、第2界面层103-2、第1缓冲件电极106、缓冲件107、第2缓冲件电极108、第3界面层103-3、第2焊料接合部110以及第4界面层103-4的顺序而被层叠。此外,层叠体117的厚度为30μm以上且100μm以下。进一步地,第1焊料接合部104的厚度与第2焊料接合部110的厚度的差为25%以内。此外,第1焊料接合部104与缓冲件10的弹性率的差以及第1焊料接合部104与缓冲件107的线膨胀系数的差分别为62%以内。
第1、第2焊料接合部104、110例如由Au-20Sn(AuSn合金,包含20wt%Sn的组成)构成,其弹性率是68GPa,线膨胀系数是16ppm/K。
此外,第1、第2焊料接合部104、110的厚度被设置为同等。
在通过层叠体117来将陶瓷基板电极102与金属基板电极112接合时,由于第1、第2焊料接合部104、110的厚度同等,因此与陶瓷基板电极102、金属基板电极112的润湿力(润湿性)同等。因此,不存在水平方向的润湿力的偏差,能够抑制LED设备的安装中成为问题的陶瓷基板101的倾斜。
此外,通过LED等设备的动作,在产生反复温度变化时,由于陶瓷基板101与金属基板113的线膨胀系数的差导致产生热应力。产生的热应力分别被施加于第1、第2焊料接合部104、110、缓冲件107,产生变形。在该变形时产生的热应力受到各个弹性率、线膨胀系数的影响。在各个弹性率、线膨胀系数不同的情况下,由于各个变形举动不同,因此产生应力集中。
Au-20Sn是稳固的焊料材料,能够耐受大面积接合时的较大的热应力,但在产生应力集中的情况下,难以抑制裂缝的进展。
另一方面,在该实施方式1所涉及的安装构造体中,通过使第1、第2焊料接合部104、110、缓冲件107的弹性率以及线膨胀系数分别接近,能够抑制应力集中,能够耐受温度变化较大的情况下的较大的热应力。
因此,通过实施方式1所涉及的安装构造体,在大面积的接合时,也能够得到能耐受龟裂进展的安装构造体。
此外,在LED等设备中使用的情况下,若厚度较大则设备的厚度变大,因此期望从第1焊料接合部104到第2焊料接合部的厚度为30-100μm的范围。
以下对构成该安装构造体的部件进行说明。
<陶瓷基板>
陶瓷基板101例如也可以是A1N基板。具体而言,能够使用□边长10mm四方、15mm四方的AlN芯片。
<陶瓷基板电极>
陶瓷基板电极102被设置于陶瓷基板101上,例如也可以是镀层。此外,也可以是由下层的Ni镀覆和上层的Au镀覆构成的两层的镀层。
<金属基板>
金属基板113例如也可以是Cu板。
<金属基板电极>
金属基板电极112被设置于金属基板113上,例如也可以是镀层。此外,也可以是由下层的Ni镀覆和上层的Au镀覆构成的两层的镀层。
<层叠体>
该安装构造体114通过层叠体117来将陶瓷基板101的陶瓷基板电极102与金属基板113的金属基板电极112接合。该层叠体117从陶瓷基板电极102向金属基板电极112,按照第1界面层103-1、第1焊料接合104、第2界面层103-2、第1缓冲件电极106、缓冲件107、第2缓冲件电极108、第3界面层103-3、第2焊料接合部110以及第4界面层103-4的顺序而被层叠。层叠体117的厚度为30μm以上且100μm以下。以下,对构成该层叠体117的各层进行说明。
<第1焊料接合部>
第1焊料接合部104也可以是镀层。材质例如也可以是Au-20Sn(AuSn合金,包含20wt%Sn的组成)镀覆。另外,材质并不限定于Au-20Sn。此外,厚度为1μm以上且10μm以下。
另外,第1界面层103-1形成为陶瓷基板电极102与第1焊料接合部104的界面层。例如,在陶瓷基板电极102的上层的Au镀覆与第1焊料接合部104的Au-20Sn镀覆的界面,成为与Au-20Sn相比而富含Au的组成的第1界面层103-1。
<缓冲件>
缓冲件107例如能够使用Cu、Ag、Al。进一步地,也可以是Cu箔、Ag箔、Al箔。Cu箔例如也可以弹性率为75GPa,线膨胀系数为16.2ppm/K,厚度为35μm。此外,第1缓冲件电极106以及第2缓冲件电极108例如也可以是在缓冲件107即Cu箔的两面被实施的镀层、例如Ni镀覆。此外,第1焊料接合部104与缓冲件107的弹性率的差为62%以内。进一步地,第1焊料接合部104与缓冲件107的线膨胀系数的差为62%以内。
另外,第2界面层103-2形成为第1焊料接合部104与第1缓冲件电极106的界面。例如,在第1焊料接合部104的Au-20Sn镀覆与第1缓冲件电极106的Ni镀覆的界面,成为Au-Sn-Ni的三成分系的第2界面层103-2。
<第2焊料接合部>
第2焊料接合部110也可以是镀层。材质例如也可以是Au-20Sn(AuSn合金、包含20wt%Sn的组成)。另外,材质并不限定于Au-20Sn。此外,厚度为1μm以上且10μm以下。另外,第1焊料接合部104的厚度与第2焊料接合部110的厚度的差为25%以内。
另外,第3界面层103-3形成为第2缓冲件电极108与第2焊料接合部110的界面层。例如,在第2缓冲件电极108的Ni镀覆与第2焊料接合部110的Au-20Sn镀覆的界面,成为Au-Sn-Ni的三成分系的第3界面层103-3。
此外,第4界面层103-4形成为第2焊料接合部110与金属基板电极112的界面层。
(安装构造体的制造方法)
本实施方式1的安装构造体按照以下顺序而被制作。
图2是将本实施方式1中的安装构造体接合之前的、从第1焊料115到第2焊料116的相对于厚度方向平行的方向的剖视图。
(1)准备陶瓷基板101和金属基板113。在陶瓷基板101的单侧设置有陶瓷基板电极102。此外,在金属基板113的单侧设置有金属基板电极112。
(2)准备缓冲件107。在缓冲件107的两面,设置第1缓冲件电极106、第2缓冲件电极108,进一步在其表面分别设置第1以及第2焊料115、116。第1、第2焊料115、116例如通过镀覆而制作,材质是Au-20Sn镀覆,厚度是1μm以上且10μm以下。准备在其下层作为第1、第2缓冲件电极106、108而实施了Ni镀覆的Cu箔。在该Cu箔部分接合后成为缓冲件107。第1、第2缓冲件电极106、108的厚度相互相等,例如为1μm以上且3μm以下。实施方式1中的Cu箔使用弹性率为75GPa、线膨胀系数为16.2ppm/K、厚度为35μm的部件。
(3)接下来,将陶瓷基板101以及缓冲件107设置为陶瓷基板电极102与第1焊料115的表面对置。此外,将缓冲件107以及金属基板113设置为金属基板电极112与第2焊料116对置。
(4)接下来,在上述的状态下将第1、第2焊料115、116的Au-20Sn的熔点加热到作为280℃以上的310℃,使第1、第2焊料115、116熔融。由此,陶瓷基板电极102和第1缓冲件电极106在各自的表面经由第1界面层103-1以及第2界面层103-2而接合。此外,金属基板113上的金属基板电极112和第2缓冲件电极108在各自的表面经由第3界面层103-3以及第4界面层103-4而接合。通过将整体冷却来形成安装构造体114。
(实施例以及比较例)
表1中记录了实施例1~3、比较例1~4中制作并评价的安装构造体。在实施例1~3、比较例1~4中,使Au-20Sn的厚度变化,并评价了第1、第2焊料接合部104、110的厚度的影响。
在实施例1~3、比较例1~4中,制作具有□边长10mm四方、15mm四方的大面积的接合的安装构造体并进行了验证。这里,陶瓷基板101是□边长10mm四方、15mm四方的AlN芯片,在其背面具有最表层是Au镀覆、其下层是Ni镀覆的陶瓷基板电极102。此外,金属基板113是Cu板,在其背面具有最表层是Au镀覆、其下层是Ni镀覆的金属基板电极112。
<倾斜的状态确认>
<温度循环试验>
在确认了初始的状态之后,反复实施了温度循环试验。各保持5分钟,进行了1000循环的液槽式温度循环试验,结束后进行了基于超声波显微镜(ScanningAcoustic Tomograph,SAT)的龟裂观察。表1中也一并标注了其观察结果,按照以下的基准来判定是否能够确保裂缝进展后的接合。换句话说,按陶瓷基板101的大小,将□边长10mm四方、□边长15mm四方裂缝的面积率都是整体的1/3以下的部件判定为◎,将□边长10mm四方、□边长15mm四方任意中裂缝大于整体的1/3且为1/2以下的部件判定为将产生比整体的1/2大的裂缝的情况判定为×。
【表1】
参照表1,在实施例1-1至1-3的任意中,初始的倾斜较小,判定为但是,在比较例1-1至1-4中,初始的倾斜较大,判定为×。此外,在比较例1-1至1-4中,熔融时的焊料的润湿扩展的状态变得不均匀,倾斜较大。
此外,在实施例1-1至1-3以及比较例1-1至1-4的任意中,裂缝的进展都较小,判定为◎。
因此,若将实施例1-1~1-3与比较例1-1~1-4进行对比,则可知作为用于发现本公开的安装构造体的效果的适当的条件,较理想为第1焊料接合部104的厚度与第2焊料接合部110的厚度同等。
(实施例2-1~2-8、比较例2-1~2-2)
在实施例2-1~2-8、比较例2-1~2-2中,为了评价缓冲件107的物性的影响,变更缓冲件107的材质来进行评价。
表2中表示实施例2-1~2-8、比较例2-1~2-2中的评价水准。另外,第1、第2焊料接合部104、110的厚度分别为5μm,针对安装构造体的制成方法以及评价方法,与上述实施例1相同。
【表2】
此外,反复温度循环试验后的裂缝进展在实施例2-1至2-8中较小,判定为◎或者特别地,在使用低弹性的Cu来作为缓冲件107的实施例2-1、2-2以及使用Ag来作为缓冲件107的实施例2-5、2-6中,裂缝的进展非常小,判定为◎。
另一方面,缓冲件107中使用了Ni的比较例2-1以及2-2的裂缝的进展较大,判定为×。
实施例2-1、2-2中用作为缓冲件107的Cu箔是低弹性率的,与作为Au-20Sn的弹性率的68GPa相比的差为10%。此外,线膨胀系数非常接近,是1%的差。此外,实施例2-5,2-6中用作为缓冲件107的Ag箔与Au-20Sn的弹性率以及线膨胀系数的差分别为3%以及20%。
认为这是由于:缓冲件107的弹性率以及线膨胀系数与第1、第2焊料接合部104、110接近,从而不产生应力集中,Au-20Sn焊料的高强度的接合被维持。
此外,其他实施例以及比较例中用作为缓冲件107的材质的、与用作为第1、第2焊料接合部104、110的Au-20Sn焊料的弹性率、线膨胀系数的差如下。实施例2-3、2-4中用作为缓冲件107的Cu箔中,与用作为第1、第2焊料接合部104、110的Au-20Sn焊料的弹性率、线膨胀系数的差分别为62%、3%。实施例2-7、2-8中用作为缓冲件107的Al箔中,与用作为第1、第2焊料接合部104、110的Au-20Sn焊料的弹性率、线膨胀系数的差分别为<1%(小于1%)、48%。比较例2-1、2-2中用作为缓冲件107的Ni箔中,与用作为第1、第2焊料接合部104、110的Au-20Sn焊料的弹性率、线膨胀系数的差分别为204%、6%。
因此,根据实施例以及比较例的结果,作为用于发现本发明的安装构造体的效果的适当的条件,期望第1、第2焊料接合部104、110与缓冲件107的弹性率、线膨胀系数的差为62%以内。作为特别适当的条件,期望第1、第2焊料接合部104、110与缓冲件107的弹性率、线膨胀系数的差为20%以内。
另外,在本公开中,包含将所述各种实施方式以及/或者实施例之中的任意的实施方式以及/或者实施例适当地组合,能够起到各个实施方式以及/或者实施例所具有的效果。
产业上的可利用性
根据本发明所涉及的安装构造体,具有能够耐受因基于反复温度变化的热应力而产生的龟裂的进展的接合。因此,在LED、功率设备等的伴随着较大发热的设备中,能够提供没有倾斜并且基于大面积的接合的散热特性优良的安装构造体,可考虑对设备的性能提高的贡献。
Claims (3)
1.一种安装构造体,是通过层叠体来将陶瓷基板的陶瓷基板电极和金属基板的金属基板电极接合的安装构造体,
所述层叠体从所述陶瓷基板电极向所述金属基板电极,按照第1界面层、第1焊料接合部、第2界面层、第1缓冲件电极、缓冲件、第2缓冲件电极、第3界面层、第2焊料接合部以及第4界面层的顺序而被层叠,
所述层叠体的厚度为30μm以上且100μm以下,
所述第1焊料接合部的厚度与所述第2焊料接合部的厚度的差为25%以内,
所述第1焊料接合部与所述缓冲件的弹性率的差以及所述第1焊料接合部与所述缓冲件的线膨胀系数的差分别为20%以内,
所述第1焊料接合部以及所述第2焊料接合部是Au-20Sn,
所述缓冲件是Cu、Al、Ag的任意一种。
2.根据权利要求1所述的安装构造体,其中,
所述陶瓷基板是AlN。
3.根据权利要求1所述的安装构造体,其中,
所述金属基板是Cu。
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