CN108847441A - 一种高效散热的发光二极管 - Google Patents
一种高效散热的发光二极管 Download PDFInfo
- Publication number
- CN108847441A CN108847441A CN201810671060.4A CN201810671060A CN108847441A CN 108847441 A CN108847441 A CN 108847441A CN 201810671060 A CN201810671060 A CN 201810671060A CN 108847441 A CN108847441 A CN 108847441A
- Authority
- CN
- China
- Prior art keywords
- thermally conductive
- metal
- package casing
- sheet metal
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002184 metal Substances 0.000 claims abstract description 113
- 230000017525 heat dissipation Effects 0.000 claims abstract description 33
- 239000012530 fluid Substances 0.000 claims abstract description 32
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 24
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 238000009423 ventilation Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 229960001866 silicon dioxide Drugs 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810671060.4A CN108847441B (zh) | 2018-06-26 | 2018-06-26 | 一种高效散热的发光二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810671060.4A CN108847441B (zh) | 2018-06-26 | 2018-06-26 | 一种高效散热的发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108847441A true CN108847441A (zh) | 2018-11-20 |
CN108847441B CN108847441B (zh) | 2019-10-29 |
Family
ID=64202510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810671060.4A Active CN108847441B (zh) | 2018-06-26 | 2018-06-26 | 一种高效散热的发光二极管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108847441B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009070738A (ja) * | 2007-09-14 | 2009-04-02 | Japan Aviation Electronics Industry Ltd | ソケット |
CN102840533A (zh) * | 2011-08-26 | 2012-12-26 | 南通突优科技创业有限公司 | 高效散热的一体化太阳能led灯 |
CN102853361A (zh) * | 2011-10-09 | 2013-01-02 | 南通天华和睿科技创业有限公司 | 通过超导液散热的园林太阳能led灯 |
TWM494472U (zh) * | 2014-07-18 | 2015-01-21 | James Kuo | 高效散熱的led模組結構 |
CN206379373U (zh) * | 2017-01-19 | 2017-08-04 | 东莞市康瑞电子有限公司 | 一种发光二极管 |
-
2018
- 2018-06-26 CN CN201810671060.4A patent/CN108847441B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009070738A (ja) * | 2007-09-14 | 2009-04-02 | Japan Aviation Electronics Industry Ltd | ソケット |
CN102840533A (zh) * | 2011-08-26 | 2012-12-26 | 南通突优科技创业有限公司 | 高效散热的一体化太阳能led灯 |
CN102853361A (zh) * | 2011-10-09 | 2013-01-02 | 南通天华和睿科技创业有限公司 | 通过超导液散热的园林太阳能led灯 |
TWM494472U (zh) * | 2014-07-18 | 2015-01-21 | James Kuo | 高效散熱的led模組結構 |
CN206379373U (zh) * | 2017-01-19 | 2017-08-04 | 东莞市康瑞电子有限公司 | 一种发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
CN108847441B (zh) | 2019-10-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190920 Address after: Dong Cheng Zhen Shuang Zhai Cun, Taizhou City, Zhejiang Province, 317000 sea Applicant after: Zhejiang Feitian Photoelectric Co.,Ltd. Address before: 241000 Yinhu Polka International Garden, Wuhu Economic and Technological Development Zone, Anhui Province 78-5-301 Applicant before: WUHU LEZHI INTELLIGENT TECHNOLOGY CO.,LTD. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: An efficient heat dissipation LED Effective date of registration: 20201203 Granted publication date: 20191029 Pledgee: Dongcheng sub branch of Zhejiang Linhai Rural Commercial Bank Co.,Ltd. Pledgor: Zhejiang Feitian Photoelectric Co.,Ltd. Registration number: Y2020330001109 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240123 Address after: 317000 shuangzhai village, Dongcheng Town, Linhai City, Taizhou City, Zhejiang Province Patentee after: Zhejiang Feitian Photoelectric Co.,Ltd. Country or region after: China Patentee after: Linhai Yiyang Lighting Co.,Ltd. Patentee after: Linhai Keqi Lighting Co.,Ltd. Address before: 317000 shuangzhai village, Dongcheng Town, Linhai City, Taizhou City, Zhejiang Province Patentee before: Zhejiang Feitian Photoelectric Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |