CN108695212B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- CN108695212B CN108695212B CN201810319692.4A CN201810319692A CN108695212B CN 108695212 B CN108695212 B CN 108695212B CN 201810319692 A CN201810319692 A CN 201810319692A CN 108695212 B CN108695212 B CN 108695212B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
The invention provides a substrate processing apparatus. The liquid processing unit (U1) of the substrate processing apparatus includes: a spin chuck (61) for holding a wafer (W); a rotation driving part (64) for rotating the spin chuck (61); a coating liquid supply nozzle (62) for supplying a coating liquid to a wafer (W) held by a spin chuck (61) rotated by driving of a rotation driving unit (64); a cup base (65) for collecting the coating liquid falling from the back surface (W2) of the wafer (W), which is the surface (front surface (W1)) opposite to the surface to which the coating liquid is supplied; and a collecting plate (30) disposed between the back surface (W2) and the cup base (65) and used for collecting the linear object generated by the coating liquid supplied to the rotating wafer (W). This can prevent the accumulation of the linear object in the recovery section, which is generated when the treatment liquid is supplied to the rotating substrate.
Description
Technical Field
The present invention relates to a substrate processing apparatus.
Background
Documents of the prior art
Patent literature
Patent document 1: utility model registration No. 3175893
Disclosure of Invention
Technical problems to be solved by the invention
With the device disclosed in patent document 1, clogging of the exhaust passage with the thread can be appropriately suppressed. Here, a part of the thread-like object generated by the rotation of the substrate may be wound around the back surface side of the substrate and may be accumulated on a cup base (a recovery portion for recovering the processing liquid) or the like disposed below the holding portion for holding the substrate. Since many pipes are provided below the holding portion such as the periphery of the cup base, the operation of collecting the accumulated thread becomes complicated.
The present invention has been made in view of the above circumstances, and an object thereof is to suppress accumulation of a linear object, which is generated when a processing liquid is supplied to a rotating substrate, below a holding portion for holding the substrate.
Technical solution for solving technical problem
A substrate processing apparatus according to an embodiment of the present invention includes: a holding portion for holding the substrate; a rotation driving part for rotating the holding part; a processing liquid supply unit configured to supply a processing liquid to the substrate held by the holding unit rotated by the rotation driving unit; and a first collecting unit disposed below the holding unit and configured to collect a linear object generated by supplying the processing liquid to the rotating substrate.
The present invention provides a substrate processing apparatus, which collects a linear object generated by supplying a processing liquid to a rotating substrate by using a first collecting part arranged below a holding part. Since the first collecting portion is disposed below the substrate, which is a generation site of the thread, the thread can be effectively collected. Thus, according to the substrate processing apparatus of the present invention, deposition of the linear object generated when the processing liquid is supplied to the rotating substrate below the holding portion can be suppressed.
The substrate processing apparatus further includes a recovery unit configured to receive the processing liquid leaked to the back surface side of the substrate, and the first collecting unit is disposed between the holding unit and the recovery unit. The first collecting portion is disposed above the collecting portion, thereby preventing the accumulation of the thread-like object in the collecting portion where the thread-like object is likely to accumulate.
The substrate processing apparatus may further include a back rinse liquid supply unit configured to supply a back rinse liquid to a back surface of the substrate. By supplying the back rinse liquid to the back surface of the substrate, the processing liquid supplied to the front surface of the substrate can be prevented from going around to the back surface of the substrate. The back rinse liquid supplied to the back surface of the substrate is splashed back by the back surface and is supplied to the first collecting unit disposed below the back surface of the substrate. Thereby, the thread collected by the first collection portion can be washed with the back rinse. Since the washed collection is liquid, it does not accumulate in the collection portion as in the case of a linear collection.
The first collection part may have a first opening, and the back rinse liquid supply part may have a discharge port opening upward below the first opening. Thus, the back rinse liquid supplied from the back rinse liquid supply unit can appropriately reach the back surface of the substrate through the first opening, and the effect of the back rinse liquid is favorably exhibited. That is, when the back rinse liquid from the discharge port of the back rinse liquid supply unit is moved upward, the back rinse liquid can be made to reach the back surface of the substrate through the first opening, and the back surface can be cleaned appropriately. Since the back rinse liquid can be sufficiently supplied to the back surface, the amount of the back rinse liquid that falls from the back surface to the first collection part can also be sufficient.
The first collecting portion may be formed separately from the holding portion and fixed. Since the first collecting portion is a member that is separate from the holding portion and does not rotate (is fixed in position), the linear object can be collected more efficiently than in the case of rotation.
The first collecting portion may be provided integrally with the holding portion, rotating together with the holding portion. Since the first collecting unit rotates, the back rinse liquid can be rinsed from a plurality of surfaces of the first collecting unit. This enables the thread collected by the first collection portion to be washed with the back washing liquid more efficiently.
The first collecting portion may be formed in a plate shape. Thus, the linear object can be recovered with a simple structure even in a limited space in the substrate processing apparatus.
The first collecting part may be inclined with respect to a plane parallel to the back surface of the substrate. This makes it possible to form a structure in which the back rinse liquid easily flows (a structure in which the wire can be appropriately made liquid).
The substrate processing apparatus described above may further include: an exhaust passage extending in the vertical direction at a position surrounding the holding portion from the outside; and a second collecting portion disposed at an upper portion of the exhaust flow path so as to cover the exhaust flow path, the second collecting portion having a second opening through which the exhaust gas flowing through the exhaust flow path passes. The wire is generated by the processing liquid being thrown off from the end of the rotating substrate. Therefore, the linear object is easily generated on the end portion side of the substrate, that is, on the outer side of the holding portion. That is, the exhaust passage extending in the vertical direction from a position surrounding the holding portion from the outside is easily clogged with the thread. In contrast, the second collecting portion is provided so as to cover the exhaust gas flow path, and the clogging of the exhaust gas flow path by the thread can be suppressed. The second trap portion is formed with an opening through which the exhaust gas passes. This allows the wire-like object to be collected and the exhaust gas in the exhaust gas flow path to be appropriately exhausted.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, deposition of a linear object, which is generated when a processing liquid is supplied to a rotating substrate, below a holding portion for holding the substrate can be suppressed.
Drawings
Fig. 1 is a perspective view showing a schematic configuration of a substrate processing system according to a first embodiment.
Fig. 2 is a sectional view taken along line II-II in fig. 1.
Fig. 3 is a sectional view taken along line III-III in fig. 2.
Fig. 4 is a schematic view of the liquid processing unit of the first embodiment.
Fig. 5 is a schematic view of the collecting member of the first embodiment.
Fig. 6 is a schematic view of a liquid processing unit of the second embodiment.
Fig. 7 is a schematic view of a collecting member of the second embodiment.
Fig. 8 is a schematic view of a liquid processing unit of the third embodiment.
Fig. 9 is a schematic view of a liquid processing unit of the fourth embodiment.
Fig. 10 is a schematic view of a fourth embodiment collection member.
Description of the reference numerals
2 8230A coating and developing apparatus (substrate processing apparatus)
30. 40, 50, 823080; collecting plate (first collecting part)
30b, 40b 8230and a passing port
61 \ 8230and rotary chuck (holding part)
62 823080 coating liquid supply nozzle (treatment liquid supply part),
64 8230a rotary drive part
65' \ 8230and cup body base (recovery part)
70 \ 8230and a discharge part
77 method 8230
80-8230and exhaust flow path
90 '\ 8230'; collecting part (second collecting part)
90d 8230and opening part
W8230a wafer (substrate)
W2 (8230), and back.
Detailed Description
[ first embodiment ]
Hereinafter, the first embodiment will be described in detail with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same reference numerals, and redundant description thereof is omitted.
(substrate processing System)
The substrate processing system 1 is a system for forming a photosensitive coating film on a substrate, exposing the photosensitive coating film, and developing the photosensitive coating film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating film is, for example, a resist film.
The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 performs exposure processing of a resist film formed on the wafer W. Specifically, the portion of the resist film to be exposed is irradiated with energy rays by a method such as immersion exposure. The coating and developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film after the exposure process.
(coating and developing apparatus)
Hereinafter, the configuration of the coating and developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in fig. 1 to 3, the coating and developing apparatus 2 includes a conveying unit 4, a processing unit 5, an interface unit 6, and a controller 100.
The carrier unit 4 carries the wafer W into the coating and developing apparatus 2 and carries the wafer W out of the coating and developing apparatus 2. For example, the transfer unit 4 can support a plurality of carrier units 11 for wafers W, and incorporates the transfer arm A1. The carrier 11 accommodates a plurality of circular wafers W, for example. The transfer arm A1 takes out the wafer W from the carrier part 11 and transfers it to the processing part 5, receives the wafer W from the processing part 5, and returns it to the carrier part 11.
The processing section 5 has a plurality of processing modules 14, 15, 16, 17. As shown in fig. 2 and 3, the process modules 14, 15, 16, and 17 include a plurality of liquid treatment units U1, a plurality of heat treatment units U2, and a transfer arm A3 for transferring the wafers W to these units. The process module 17 further includes a direct transfer arm A6 for transferring the wafer W without passing through the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 applies a treatment liquid to the surface of the wafer W. The heat treatment unit U2 incorporates, for example, a hot plate and a cooling plate, and performs heat treatment by heating the wafer W with the hot plate and cooling the heated wafer W with the cooling plate.
The processing module 14 forms a base film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies the processing liquid for forming the base layer film to the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the base layer film.
The processing module 15 forms a resist film on the base film by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 15 applies a processing liquid (coating liquid) for forming a resist film on the base film. The heat treatment unit U2 of the processing module 15 performs various heat treatments associated with the formation of the resist film. The liquid treatment unit U1 of the treatment module 15 will be described in detail later.
The processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments associated with the formation of the upper layer film.
The processing unit 17 performs a developing process of the exposed resist film by the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 17 applies a processing liquid for development (a developing liquid) to the surface of the wafer W after the exposure is completed, and then washes the surface with a processing liquid for washing (a rinse liquid), thereby performing a developing process of the resist film. The heat treatment unit U2 of the process module 17 performs various heat treatments accompanied with the development treatment. Specific examples of the heat treatment include heat treatment before development treatment (PEB), heat treatment after development treatment (PB: post Bake), and the like.
A canopy unit U10 is provided on the conveying unit 4 side in the processing unit 5. The shelving unit U10 is divided into a plurality of units arranged in the vertical direction. A lift arm A7 is provided near the canopy frame unit U10. The lift arm A7 lifts and lowers the wafer W between the units of the shelf unit U10. A canopy unit U11 is provided in the processing unit 5 on the interface unit 6 side. The shelving unit U11 is divided into a plurality of units arranged in the vertical direction.
The interface unit 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface unit 6 includes a transfer arm A8 therein and is connected to the exposure apparatus 3. The transfer arm A8 transfers the wafer W placed in the rack unit U11 to the exposure device 3, receives the wafer W from the exposure device 3, and returns the wafer W to the rack unit U11.
The controller 100 controls the coating and developing apparatus 2 to perform coating and developing processes in the following order, for example.
First, the controller 100 controls the transfer arm A1 to transfer the wafer W in the carrier section 11 to the shelf unit U10, and controls the lift arm A7 to dispose the wafer W in a unit for the process module 14.
Next, the controller 100 controls the transfer arm A3 to transfer the wafer W from the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 14, and controls the liquid treatment unit U1 and the heat treatment unit U2 to form a base film on the surface of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W with the base layer film formed thereon to the shelf unit U10, and controls the lift arm A7 to dispose the wafer W in a unit for the process module 15.
Next, the controller 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U10 to the liquid treatment unit U1 and the heat treatment unit U2 in the processing module 15, and controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the base film of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 to dispose the wafer W in a unit for the process module 16.
Next, the controller 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U10 to each unit in the processing module 16, and controls the liquid processing unit U1 and the heat processing unit U2 to form an upper layer film on the resist film of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 to dispose the wafer W in a unit for the process module 17.
Next, the controller 100 controls the direct transfer arm A6 to transfer the wafer W in the shelf unit U10 to the shelf unit U11, and controls the transfer arm A8 to send out the wafer W to the exposure apparatus 3. Thereafter, the controller 100 controls the transfer arm A8 to receive the wafer W subjected to the exposure processing from the exposure apparatus 3 and return it to the shelf unit U11.
Next, the controller 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U11 to each unit in the processing module 17, and controls the liquid processing unit U1 and the heat processing unit U2 to perform the developing process on the resist film of the wafer W. Thereafter, the controller 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lift arm A7 and the transfer arm A1 to return the wafer W to the carrier 11. The coating and developing processes are completed as described above.
Further, the specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 illustrated above. The substrate processing apparatus may have any configuration as long as it includes the liquid processing unit U1 for film formation (the liquid processing unit U1 of the processing modules 14, 15, and 16) and the controller 100 capable of controlling the above components.
(liquid treatment Unit)
Next, the liquid processing unit U1 of the processing module 15 will be described in detail. As shown in fig. 4, the liquid processing unit U1 of the processing module 15 includes a spin chuck 61 (holding portion), a coating liquid supply nozzle 62 (processing liquid supply portion), a solvent supply nozzle 63, a rotation driving portion 64, a cup base 65 (collecting portion), a back rinse liquid supply nozzle 77 (back rinse liquid supply portion), a discharge portion 70, and a collecting plate 30 (first collecting portion).
(rotating chuck)
The spin chuck 61 holds the wafer W (substrate) horizontally. The spin chuck 61 is connected to the rotation driving unit 64 via a shaft 66 extending in the vertical direction (vertical direction). The spin chuck 61 rotates about the vertical axis in accordance with the rotation of the shaft 66 by the rotation driving unit 64. The spin chuck 61 rotates about the vertical axis, and the wafer W held by the spin chuck 61 rotates about the vertical axis. The spin chuck 61 is vertically moved up and down in accordance with the movement of the shaft 66 by the rotation driving unit 64.
(rotation drive unit)
The rotation driving unit 64 rotates the spin chuck 61 about the vertical axis. The rotation driving unit 64 rotates the shaft 66, thereby rotating the spin chuck 61 coupled to the upper end of the shaft 66. The rotation driving unit 64 moves the shaft 66 up and down, thereby moving the spin chuck 61 connected to the upper end of the shaft 66 up and down.
The rotation driving unit 64 rotates the spin chuck 61 at an appropriate speed in each step of the liquid processing unit U1 of the processing module 15. The process includes at least a pre-wetting process, a coating liquid supplying process, and a coating liquid spreading process. The pre-wetting step is a step for forming a liquid film of an organic solvent on the wafer W before the coating liquid is applied to the wafer W, so that the coating liquid is easily spread on the wafer W and bubbles are less likely to be mixed between the wafer W and the coating liquid. The coating liquid supply step is a step of supplying a coating liquid such as a high-viscosity resist to the wafer W. The coating liquid spreading step is a step of spreading the coating liquid applied to the wafer W to the peripheral edge portion of the wafer W. In the coating film spreading step, a part of the coating film is spun off from the edge of the wafer W by rotating the wafer W, and the coating film having high viscosity (for example, 1000cp or more) is solidified into a linear material. The spin driving unit 64 rotates the wafer W at 500 to 1500rpm, for example, in the pre-wetting step. The spin driving unit 64 rotates the wafer W at 800 to 1500rpm, for example, in the coating liquid supply step. The rotation driving unit 64 rotates the wafer W at 500 to 1200rpm, for example, in the coating liquid spreading step.
(coating liquid supply nozzle)
The coating liquid supply nozzle 62 supplies a coating liquid (treatment liquid) such as a resist to the wafer W held by the spin chuck 61 rotated by driving of the spin driving unit 64 in the coating liquid supply step. The coating liquid supply nozzle 62 supplies a high viscosity coating liquid (for example, 2000cp or more) having an organic solvent concentration of 70% or less. The coating liquid supply nozzle 62 supplies the coating liquid to the front surface W1 of the wafer W from above the substantially central position of the wafer W. The coating liquid supply nozzle 62 may supply the coating liquid from above a position between the center position and the peripheral edge portion of the wafer W, or may supply the coating liquid while scanning between the center position and the peripheral edge portion of the wafer W.
(solvent supply nozzle)
The solvent supply nozzle 63 supplies an organic solvent such as a thinner to the wafer W held by the spin chuck 61 rotated by the driving of the rotation driving unit 64 in the pre-wetting step. The solvent supply nozzle 63 supplies the organic solvent while scanning at a speed of, for example, 10 to 200mm/sec between the center position and the peripheral edge portion of the wafer W. Further, the solvent supply nozzle 63 may supply the organic solvent in a state of being stopped above a substantially central position of the wafer W.
(cup body base)
The cup base 65 is disposed below the spin chuck 61 so as to surround the shaft 66. The cup base 65 receives and collects the coating liquid that has leaked and dropped on the back surface W2 of the wafer W (the surface of the wafer W opposite to the surface W1 to which the coating film is supplied).
(Back washing liquid supply nozzle)
The back rinse liquid supply nozzle 77 supplies a back rinse liquid of an organic solvent such as a thinner to the back surface W2 of the wafer W. The back rinse liquid supply nozzles 77 are provided at, for example, two positions on the cup base 65, and have discharge ports that open upward below the passage openings 30b of the collecting plate 30 described later. In the coating liquid spreading step, the back rinse liquid is supplied to the back surface W2 of the wafer W, whereby the coating film supplied to the front surface W1 can be prevented from being drawn to the back surface W2 side. In the coating film spreading step, when a linear object in which the coating film is solidified into a linear shape is generated at the edge of the wafer W as the wafer W rotates, the back rinse liquid is supplied to the back surface W2 of the wafer W, and thus the linear object just generated can be dissolved. The back rinse liquid supplied to the back surface W2 of the wafer W is splashed back by the back surface W2 and is also supplied to a collecting plate 30 (described later) disposed below the back surface W2.
(discharge part)
The discharge section 70 is disposed at a position surrounding the spin chuck 61 from the outside, and is configured to discharge the exhaust gas and the coating liquid (waste liquid). The discharge unit 70 includes an inner cup 71 as a processing cup surrounding the spin chuck 61, and an outer cup 72 disposed at a position surrounding the inner cup 71 from the outside. An exhaust passage 80 is formed between the inner cup 71 and the outer cup 72.
The inner cup 71 includes: an annular inclined wall 79 extending obliquely downward (outward downward) toward the outer cup 72 from a position close to the peripheral edge on the back surface W2 side of the wafer W; and an annular vertical wall 75 extending vertically downward and continuous with the lower end of the inclined wall 79. The inclined wall 79 and the vertical wall 75 are configured to guide the coating liquid thrown off from the end of the wafer W to flow down. The bottom of the outer cup 72 is formed in a recess and is configured as an annular liquid receiving portion. The outer cup 72 has a waste liquid port 73 formed in a lower portion thereof and an exhaust port 78 formed in a position closer to (inside) the spin chuck 61 than the waste liquid port 73. A partition wall 76 extending upward from below is formed between the waste liquid port 73 and the exhaust port 78. The partition wall 76 extends from a position inside the vertical wall 75 to a position above the lower end of the vertical wall 75. Thus, a labyrinth structure is formed by the partition wall 76 and the vertical wall 75, and the gas and the liquid are appropriately separated, the gas is appropriately discharged from the gas discharge port 78, and the liquid is appropriately discharged from the waste liquid port 73.
(collecting plate)
The collecting plate 30 is disposed below the spin chuck 61, more specifically, between the spin chuck 61 and the cup base 65, and is a member for collecting a linear object generated by supplying the coating liquid to the rotating wafer W. More specifically, the collecting plate 30 is disposed on the upper surface of the cup base 65 so as to surround the shaft 66. The collecting plate 30 is a fixed plate-like member configured as a separate member from the spin chuck 61. The collection plate 30 is secured to the cup base 65.
As shown in fig. 5, the collecting plate 30 is formed in a disc shape. The collecting plate 30 includes: a shaft hole 30a through which the shaft 66 passes; a through-port 30b (first opening) through which the back rinse solution supplied from the back rinse solution supply nozzle 77 to the back surface W2 of the wafer W passes; the pin holes 30x for fixing to the positioning pins of the cup base 65 are inserted. The shaft hole 30a is formed at a substantially central portion of the collecting plate 30. The passage opening 30b is formed at a position where the back rinse liquid from the back rinse liquid supply nozzle 77 can pass through in a state where the collecting plate 30 is fixed to the cup base 65. In the present embodiment, the back rinse liquid supply nozzles 77 are provided at two locations on the bowl base 65, and the corresponding through ports 30b are also formed at two locations on the collecting plate 30. The pin holes 30x are formed in 2 symmetrical positions across the center portion of the collecting plate 30, for example.
The collection plate 30 may be a component to which various processes for better collecting the wire are applied. For example, the collection plate 30 may have irregularities on the surface. Further, the collecting plate 30 may be a member whose surface is subjected to sand blasting. The collecting plate 30 may have an air nozzle, and the state of the thread may be changed by controlling the temperature, humidity, and/or air flow through the air nozzle.
The collecting plate 30 is made of a metal such as stainless steel, PTFE (polytetrafluoroethylene), PTFE (polychlorotrifluoroethylene), or a material having resistance to a coating liquid such as polychlorotrifluoroethylene.
(operational Effect of the first embodiment)
The liquid processing unit U1 of the first embodiment includes: a spin chuck 61 for holding the wafer W; a rotation driving unit 64 for rotating the spin chuck 61; a coating liquid supply nozzle 62 for supplying a coating liquid to the wafer W held by the spin chuck 61 rotated by the driving of the rotation driving unit 64; a cup base 65 for collecting the coating liquid falling from a back surface W2, which is the surface of the wafer W opposite to the surface (front surface W1) to which the coating liquid is supplied; and a collecting plate 30 disposed between the back surface W2 and the cup base 65 and collecting a linear object generated by supplying the coating liquid to the rotating wafer W.
In the liquid processing unit U1, the linear object generated by supplying the coating liquid to the rotating wafer W is collected by the collecting plate 30 disposed between the back surface W2 and the cup base 65. By disposing the collecting plate 30 below the wafer W, which is a generation site of the wire, the wire can be collected efficiently. Further, by disposing the collecting plate 30 above the bowl base 65, deposition of the linear object on the bowl base 65 can be suppressed. Thus, according to the liquid treatment unit U1, deposition of a linear object (for example, the cup base 65) in a space below the spin chuck 61, which is generated when the coating liquid is supplied to the rotating wafer W, can be suppressed.
The liquid processing unit U1 further includes a back rinse liquid supply nozzle 77 for supplying a back rinse liquid to the back surface W2 of the wafer W. By supplying the back rinse liquid to the back surface W2 of the wafer W, the coating liquid supplied to the front surface W1 of the wafer W can be prevented from being bypassed to the back surface W2 of the wafer W. The back rinse liquid supplied to the back surface W2 is splashed back by the back surface W2 and is also supplied to the collecting plate 30 disposed below the back surface W2. This enables the wire collected by the collection plate 30 to be washed with a back rinse. Since the flushed collection is liquid, it does not accumulate on the cup base 65 as in the case of a linear collection.
The collection plate 30 has a passage port 30b, and the back rinse liquid supply nozzle 77 has a discharge port opening upward below the passage port 30 b. Accordingly, the back rinse liquid supplied from the back rinse liquid supply nozzle 77 appropriately reaches the back surface W2 of the wafer W through the through-hole 30b, and the above-described effect of the back rinse liquid can be satisfactorily exhibited. That is, when the back rinse liquid from the discharge port of the back rinse liquid supply nozzle 77 is moved upward, the back rinse liquid can be supplied to the back surface W2 of the wafer W through the through-hole 30b, and the back surface W2 can be cleaned appropriately. Since the back rinse liquid can be sufficiently supplied to the back surface W2, the amount of the back rinse liquid falling from the back surface W2 to the collecting plate 30 can be sufficient.
In the present embodiment, the thread collected by the collection plate 30 is washed with the back washing liquid, but even if the thread collected by the collection plate 30 is not washed clean by the back washing liquid, the liquid processing unit can be easily operated as compared with a conventional structure in which a thread is deposited on the cup base. That is, in the case where the wire is deposited on the cup base as in the conventional art, it is necessary to directly clean the cup base on which many pipes are provided, and the operation of the liquid treatment unit becomes complicated. In contrast, in the configuration in which the wire is collected by the collection plate 30, even if the wire is not washed clean by the back rinse liquid, the wire can be easily removed by taking out and washing the collection plate 30. This makes it possible to facilitate the operation of the liquid treatment unit compared to the conventional liquid treatment unit.
The collecting plate 30 is separated from the spin chuck 61 and fixed to the cup base 65. By separating the collecting plate 30 from the spin chuck 61 so as not to rotate (the position is fixed), the linear object can be collected more efficiently than in the case of rotating.
The collecting plate 30 is formed in a plate shape. This enables the thread to be collected with a simple configuration even in a limited space in the liquid treatment unit U1.
[ second embodiment ]
Next, a liquid treatment unit U1A according to a second embodiment will be described with reference to fig. 6 and 7. In the description of the present embodiment, the differences from the first embodiment will be mainly described.
As shown in fig. 6, a liquid treatment unit U1A according to the second embodiment includes a collecting plate 40 instead of the collecting plate 30 described in the first embodiment. The collecting plate 40 is provided integrally with the spin chuck 61 and rotates together with the spin chuck 61. More specifically, the collecting plate 40 is disposed on the lower surface of the spin chuck 61 and rotates together with the spin chuck 61.
As shown in fig. 7, a plurality of through holes 40b for passing back rinse liquid are formed in the disc-shaped collecting plate 40 in the circumferential direction. In the example shown in fig. 7, the through-port 40b is formed at 8 positions in the collecting plate 40. In the collecting plate 40, at a position (position in the radial direction) to which the back rinse liquid is supplied, a region of the passage port 40b is wider than at least a region where the passage port 40b is not provided (where the back rinse liquid is not passed). Thus, even in the configuration in which the collection plate 40 rotates, the back rinse solution can be appropriately passed through the passage port 40b.
As described above, in the liquid processing unit U1A according to the second embodiment, the collecting plate 40 is provided integrally with the spin chuck 61 and rotates together with the spin chuck 61. The collection plate 40 is rotated, and the back rinse liquid can flow on a plurality of surfaces of the collection plate 40. This enables the wires collected by the collection plate 40 to be washed with the back rinse more efficiently.
Further, since the collection plate 40 is disposed on the lower surface of the spin chuck 61, the collection plate 40 can be rotated, that is, the wire can be washed with the back rinse solution.
[ third embodiment ]
Next, a liquid treatment unit U1B according to a third embodiment will be described with reference to fig. 8. In the description of the present embodiment, the differences from the first and second embodiments will be mainly described.
As shown in fig. 8, a liquid treatment unit U1B according to a third embodiment includes a collecting plate 50 instead of the collecting plate 30 described in the first embodiment and the collecting plate 40 described in the second embodiment. The collection plate 50 is inclined with respect to a plane parallel to the back surface W2 of the wafer W. More specifically, the collecting plate 50 is thick on the side (inner side) closer to the shaft 66, thin on the side (outer side) closer to the discharge portion 70, and inclined with respect to the plane parallel to the back surface W2 of the wafer W.
In the inclined collecting plate 50, the back rinse liquid BR splashed back on the back surface W2 of the wafer W and reaching the collecting plate 50 easily flows toward the drain 70 on the collecting plate 50 (see fig. 8). That is, the back rinse BR can be easily flowed. This enables the thread SI collected in the collection plate 50 to be washed out efficiently, and the thread SI can be appropriately made liquid.
[ fourth embodiment ]
Next, a liquid treatment unit U1C according to a fourth embodiment will be described with reference to fig. 9 and 10. In the description of the present embodiment, differences from the first to third embodiments will be mainly described.
As shown in fig. 9, a liquid treatment unit U1C according to a fourth embodiment includes, in addition to the configuration described in the first embodiment, a collecting member 90 (second collecting unit) for collecting a thread, which is disposed above the exhaust passage 80 extending in the vertical direction so as to cover the exhaust passage 80, at a position surrounding the spin chuck 61 from the outside. The collecting member 90 is provided so as to block the exhaust gas flow path 80. The collecting member 90 has an opening 90d (second opening) (see fig. 10) through which the exhaust gas flowing through the exhaust gas flow passage 80 passes, and is configured to be able to collect the linear object reaching the exhaust gas flow passage 80 side while exhausting the gas from the opening 90d.
As shown in fig. 10, the collecting member 90 includes an inner ring 90a made of metal such as stainless steel, an outer ring 90b having a larger diameter than the inner ring 90a, and a plurality of connecting members 90c in a triangular shape, for example, connecting the inner ring 90a and the outer ring 90 b. In the collecting member 90, the opening 90d is provided in a region between the inner ring 90a and the outer ring 90b except for a region where the triangular connecting member 90c is provided. This allows communication between the upper and lower portions of the collecting member 90 through the opening 90d, and allows the atmosphere inside the processing chamber to be discharged to the exhaust passage 80. The collection member 90 allows the exhaust gas and the liquid in the exhaust gas to pass through the opening 90d below the collection member 90, and collects the thread by the connecting member 90c.
As described above, the wire-like object is generated by the coating liquid being thrown off from the peripheral edge portion of the rotating wafer W. Therefore, the linear object is easily generated on the peripheral edge portion side of the wafer W, i.e., outside the spin chuck 61. That is, the wire easily blocks the exhaust passage 80 extending in the vertical direction at a position surrounding the spin chuck 61 from the outside. On the other hand, by providing the collecting member 90 so as to cover the exhaust passage 80, clogging of the exhaust passage 80 by the thread can be suppressed. Further, the trap member 90 is formed with an opening 90d through which the exhaust gas passes. This allows the wire-like object to be collected and the exhaust flow path 80 to be appropriately exhausted.
Although the first to fourth embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and may be modified or applied to other embodiments without changing the gist of the present invention described in the claims.
For example, although the configuration of the present invention is described as an example of using the liquid processing unit U1 of the processing module 15, the present invention is not limited to this, and the configuration of the present invention can be applied to various apparatuses that generate a linear object by supplying a high-viscosity processing liquid to a rotating substrate.
Claims (7)
1. A substrate processing apparatus, comprising:
a holding portion for holding the substrate;
a rotation driving unit for rotating the holding unit;
a processing liquid supply unit configured to supply a processing liquid to the substrate held by the holding unit rotated by the rotation driving unit; and
a first collecting section disposed below the holding section and configured to collect a linear object generated by supplying the processing liquid to the rotating substrate,
the first collecting portion is provided integrally with the holding portion and rotates together with the holding portion.
2. The substrate processing apparatus according to claim 1, wherein:
further comprising a recovery part for receiving the processing liquid leaked to the back side of the substrate,
the first collecting portion is disposed between the holding portion and the collecting portion.
3. The substrate processing apparatus according to claim 1 or 2, wherein:
and a back rinse liquid supply unit for supplying a back rinse liquid to the back surface of the substrate.
4. The substrate processing apparatus according to claim 3, wherein:
the first collecting portion has a first opening,
the back rinse liquid supply unit has a discharge port opening upward below the first opening.
5. The substrate processing apparatus according to claim 1 or 2, wherein:
the first collecting portion is formed in a plate shape.
6. The substrate processing apparatus according to claim 5, wherein:
the first collecting portion is inclined with respect to a plane parallel to the back surface of the substrate.
7. The substrate processing apparatus according to claim 1 or 2, further comprising:
an exhaust gas flow path extending in the vertical direction at a position surrounding the holding portion from the outside; and
a second collecting section disposed at an upper portion of the exhaust gas flow passage so as to cover the exhaust gas flow passage and collecting the thread,
the second collecting portion has a second opening through which the exhaust gas flowing through the exhaust gas flow path passes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017078260A JP6883462B2 (en) | 2017-04-11 | 2017-04-11 | Board processing equipment |
| JP2017-078260 | 2017-04-11 |
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| Publication Number | Publication Date |
|---|---|
| CN108695212A CN108695212A (en) | 2018-10-23 |
| CN108695212B true CN108695212B (en) | 2023-03-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810319692.4A Active CN108695212B (en) | 2017-04-11 | 2018-04-11 | Substrate processing apparatus |
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| JP (1) | JP6883462B2 (en) |
| KR (1) | KR102448807B1 (en) |
| CN (1) | CN108695212B (en) |
| TW (1) | TWI754031B (en) |
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| JP6773167B1 (en) * | 2019-04-16 | 2020-10-21 | ダイキン工業株式会社 | Wafer cup |
| CN110420803B (en) * | 2019-06-25 | 2020-12-11 | 德清县诚达金属材料有限公司 | Movable type drying accelerating type sensor sealing equipment |
| KR102386209B1 (en) * | 2020-03-06 | 2022-04-13 | 세메스 주식회사 | Apparatus for treating substrate and method for treating substrate |
| TWI800064B (en) * | 2021-10-29 | 2023-04-21 | 弘塑科技股份有限公司 | Single wafer wet processing equipment |
| KR102584570B1 (en) * | 2021-12-31 | 2023-10-05 | 세메스 주식회사 | Apparatus for treating a substrate and method for reducing scattering |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102448807B1 (en) | 2022-09-29 |
| TWI754031B (en) | 2022-02-01 |
| KR20180114841A (en) | 2018-10-19 |
| CN108695212A (en) | 2018-10-23 |
| TW201903860A (en) | 2019-01-16 |
| JP6883462B2 (en) | 2021-06-09 |
| JP2018182023A (en) | 2018-11-15 |
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