TW201903860A - Substrate processing device - Google Patents

Abstract

The present invention relates to a substrate processing apparatus which suppresses accumulation of a yarn shaped object generated when supplying a processing liquid to a rotating substrate. A liquid processing unit U1 comprises: a spin chuck (61) retaining and supporting a wafer (W); a rotation driving portion (64) rotating the spin chuck (61); a coating liquid supplying nozzle (62) rotated by the rotation driving portion (64) and supplying a coating liquid to the wafer (W) retained and supported by the spin chuck (61); a cup base (65) recovering the coating liquid falling from a W2 which is the other surface opposite to a surface (surface W1) supplied with the coating liquid in the wafer (W); and a collecting plate (30) arranged between the other surface W2 and the cub base (65), and collecting the generated yarn shaped object by supplying the coating liquid to the rotating wafer (W).

Description

Substrate processing device

This disclosure relates to a substrate processing apparatus.

Patent Document 1 discloses the following: when the substrate to which the coating liquid (treatment liquid) is applied is rotated in order to diffuse the coating liquid, the coating liquid is solidified into filaments; There is a fear that the filament may be blocked in the exhaust flow path; and a catching portion for catching the filament may be provided above the exhaust flow path. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Utility Model Registration No. 3175893

[Problems to be Solved by the Invention]

By the means disclosed in the aforementioned Patent Document 1, clogging of the filaments in the exhaust flow path can be appropriately controlled. Here, there is a case where a part of the filaments generated by the rotation of the substrate is wound back to the rear surface of the substrate, and is deposited on a cup base (recycling processing liquid) disposed below the holding portion holding the substrate. Recycling Department) and so on. Since a large number of pipes are provided around the cup base and below the holding portion, the operation of recovering the deposited filaments becomes complicated.

The present disclosure has been made in view of the above-mentioned circumstances, and the purpose of the research is to suppress the situation where "a filament formed when a processing liquid is supplied to a rotating substrate is deposited under the holding portion holding the substrate". [Means to solve the problem]

A substrate processing apparatus according to one aspect of the present disclosure includes: a holding portion that holds a substrate; a rotation driving portion that rotates the holding portion; a processing liquid supply portion that supplies a processing liquid to a substrate held by the holding portion; It is rotated by a rotation driving section; and a first capture section is disposed below the holding section and captures a filament formed by the processing liquid being supplied to the rotating substrate.

In the substrate processing apparatus of the present disclosure, the filaments generated when the processing liquid is supplied to the rotating substrate are captured by the first capturing portion disposed below the holding portion. By arranging the first capturing portion below the substrate where the filament is generated, that is, the filament can be effectively captured. As described above, according to the substrate processing apparatus of the present disclosure, it is possible to suppress a situation where "a filament is generated under a holding portion when a processing liquid is supplied to a rotating substrate".

The above-mentioned substrate processing apparatus further includes a recovery unit for receiving the processing liquid leaked to the back surface side of the substrate, and the first capture unit may be disposed between the holding unit and the recovery unit. By arranging the first capture portion above the recovery portion, it is possible to suppress the deposition of the filaments in the recovery portion where the filaments are easily deposited.

The above-mentioned substrate processing apparatus may further include a back-side rinsing liquid supply unit that supplies a back-side rinsing liquid to the back surface of the substrate. By supplying the back surface washing liquid to the back surface of the substrate, it is possible to suppress the processing liquid supplied to the surface of the substrate from being rewound to the back surface of the substrate. In addition, the back surface washing liquid supplied to the back surface of the substrate is returned to the back surface, and is also supplied to the first capture portion, and the first capture portion is disposed below the back surface of the substrate. Thereby, the filaments captured by the first capture unit can be washed with the back washing liquid. Since the washed-out catch is liquefied, it will not be deposited in the recovery section when it is in the form of a filament.

The first capture unit may have a first opening, and the back-side flushing liquid supply unit may have a discharge opening opened above the lower opening. Thereby, the back surface rinsing liquid supplied from the back surface rinsing liquid supply unit will appropriately reach the back surface of the substrate through the first opening, and the effect due to the back surface rinsing liquid can be appropriately achieved. That is, when the back-side washing liquid is directed upward from the discharge port of the back-side washing liquid supply unit, the back-side washing liquid can be passed through the first opening to reach the back of the substrate, and the back can be properly cleaned. Since the back surface rinsing liquid can be sufficiently supplied to the back surface, the amount of the back surface rinsing liquid dropped from the back surface to the first capturing portion can also be sufficient.

The first capture unit may be configured and fixed independently of the holding unit. The first capturing portion is provided as a non-rotating (fixed position) member which is an independent individual from the holding portion, and thereby, the wire can be captured more effectively than when rotating.

The first capturing portion is integrally provided with the holding portion, and may be rotated together with the holding portion. By rotating the first capturing portion, the back surface washing liquid can be caused to flow to a different surface of the first capturing portion. Thereby, the filaments captured by the 1st capture part can be rinsed more effectively with the back surface washing liquid.

The first capturing portion may be formed in a plate shape. Thereby, even in a limited space in the substrate processing apparatus, the filaments can be recovered with a simple configuration.

The first capturing portion may be inclined with respect to a surface parallel to the back surface of the substrate. Thereby, it can be set as the structure (the structure which can liquefy a filament suitably) which can flow a back surface washing liquid easily.

The substrate processing apparatus further includes: an exhaust flow path extending in a vertical direction at a position that surrounds the holding portion from the outside; and a second catching portion that covers the exhaust flow path above the exhaust flow path. The second capturing portion may be arranged in a manner that captures the filament, and the second capturing portion may include an opening to allow the exhaust gas flowing through the exhaust gas flow path to pass through. The filaments are generated when the processing liquid is thrown away from the end of the rotating substrate. Therefore, the filaments are easily generated on the end portion side of the substrate, that is, outside the holding portion. In other words, at the position surrounding the holding portion from the outside, the exhaust flow path extending in the up-and-down direction is liable to block the filaments. At this point, the second catching portion is provided so as to cover the exhaust flow path, thereby preventing the filaments from clogging the exhaust flow path. Further, the second catching portion is formed with an opening through which exhaust gas passes. Thereby, the filaments can be captured, and the exhaust in the exhaust flow path can be appropriately performed. [Effect of the invention]

According to the present disclosure, it is possible to suppress a situation where "a filament formed when a processing liquid is supplied to a rotating substrate is deposited under a holding portion of a holding substrate".

[First Embodiment] The following describes the first embodiment in detail with reference to the drawings. In the description, the same elements or elements having the same function are denoted by the same symbols, and repeated descriptions are omitted.

[Substrate processing system] (1) The substrate processing system 1 is a system for applying a photosensitive film to a substrate, exposing the photosensitive film, and developing the photosensitive film. The substrate to be processed is, for example, a wafer W of a semiconductor. The photosensitive coating is, for example, a photoresist film.

The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs an exposure process of a photoresist film formed on the wafer W. Specifically, an energy ray is irradiated to the exposure target portion of the photoresist film by a method such as liquid immersion exposure. The coating and developing device 2 performs a process of forming a photoresist film on the surface of the wafer W before performing the exposure process by the exposure device 3, and performs a photoresist film development process after the exposure process.

(Coating and Developing Apparatus) The following describes the configuration of the coating and developing apparatus 2 as an example of a substrate processing apparatus. As shown in FIGS. 1 to 3, the coating and developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a controller 100.

The carrier block 4 is used to introduce the wafer W into the coating and developing device 2 and to carry out the wafer W from the coating and developing device 2. For example, the carrier block 4 can support a plurality of carriers 11 for the wafer W, and has a receiving arm A1 inside. The carrier 11 contains, for example, a plurality of wafers W in a circular shape. The receiving arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, and receives the wafer W from the processing block 5 and returns it to the carrier 11.

The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. As shown in FIG. 2 and FIG. 3, the processing modules 14, 15, 16, 17, and the system include: a plurality of liquid processing units U1; a plurality of heat treatment units U2; and a transfer arm A3, which transfers the wafer W to the Those units. The processing module 17 is further built-in: a direct transfer arm A6, and the wafer W is transferred without passing through the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 applies a processing liquid to the surface of the wafer W. The heat treatment unit U2 includes, for example, a built-in hot plate and a cooling plate, and the wafer W is heated by the hot plate, and the heated wafer W is cooled by the cooling plate to perform heat treatment.

The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a processing liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments with the formation of an underlying film.

The processing module 15 forms a photoresist film on the lower film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 is a coating liquid (coating liquid) for forming a photoresist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments with the formation of a photoresist film. The details of the liquid processing unit U1 of the processing module 15 will be described later.

The processing module 16 forms an upper film on the photoresist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a processing liquid for forming an upper layer film on the photoresist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments with the formation of an upper film.

The processing module 17 performs the development processing of the photoresist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 17 is coated with the processing liquid (developing liquid) for development on the surface of the wafer W after exposure, and then the processing liquid (rinsing liquid) for cleaning is applied. Then, it is washed away, and the development process of the photoresist film is performed. The heat treatment unit U2 of the processing module 17 performs various heat treatments accompanied by development processing. Specific examples of the heat treatment include heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), and the like.

On the carrier block 4 side in the processing block 5, a scaffold unit U10 is provided. The shelving unit U10 is divided into a plurality of cells arranged in the up-down direction. A lifting arm A7 is provided near the shelving unit U10. The lifting arm A7 lifts and lowers the wafer W between the cells of the shelf unit U10. On the side of the interface block 6 in the processing block 5, a scaffold unit U11 is provided. The shelving unit U11 is divided into a plurality of cells arranged in the up-down direction.

The interface block 6 is used for receiving and receiving wafers W from the exposure device 3. For example, the interface block 6 is provided with a receiving arm A8 and is connected to the exposure device 3. The receiving arm A8 transfers the wafer W arranged in the shelf unit U11 to the exposure device 3, receives the wafer W from the exposure device 3, and returns to the shelf unit U11.

The controller 100 controls the coating and developing device 2 by, for example, performing the coating and developing process using the following procedure.

First, the controller 100 controls the receiving arm A1 so as to transfer the wafer W in the carrier 11 to the shelf unit U10, and arranges the wafer W in a compartment for the processing module 14. To control the lifting arm A7.

Secondly, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 14 so as to transfer the wafer W on the surface of the wafer W. The method of forming the lower layer film is to control the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W on which the lower-layer film is formed is returned to the shelf unit U10, and arranges the wafer W in the compartment of the processing module 15 Mode to control the lifting arm A7.

Secondly, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the scaffolding unit U10 to the liquid processing unit U1 and the heat treatment unit U2 in the processing module 15 so as to lower the wafer W The method of forming a photoresist film on the film controls the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm so that the wafer W is arranged in the compartment for the processing module 16. A7.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U10 to each unit in the processing module 16, and forms an upper film on the photoresist film of the wafer W In this manner, the liquid processing unit U1 and the heat treatment unit U2 are controlled. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm so that the wafer W is disposed in the compartment for the processing module 17. A7.

Next, the controller 100 controls the direct transfer arm A6 to transfer the wafer W of the gantry unit U10 to the gantry unit U11, and controls the receipt and delivery of the wafer W to the exposure device 3 Arm A8. Thereafter, the controller 100 controls the receiving arm A8 so as to receive the wafer W subjected to the exposure process from the exposure apparatus 3 and return to the shelf unit U11.

Next, the controller 100 controls the transfer arm A3 so as to transfer the wafer W of the shelf unit U11 to each unit in the processing module 17, and applies imaging processing to a photoresist film on the wafer W. Mode, controlling the liquid processing unit U1 and the heat treatment unit U2. Thereafter, the controller 100 controls the transfer arm A3 so that the wafer W is returned to the shelf unit U10, and controls the lift arm A7 and the receiving arm so that the wafer W is returned to the carrier 11. A1. This completes the application and development processing.

The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any type of substrate processing as long as it includes a liquid processing unit U1 (liquid processing unit U1 for processing modules 14, 15, 16) for forming a film and a controller 100 capable of controlling the same. Device.

[Liquid Processing Unit] Next, the liquid processing unit U1 of the processing module 15 will be described in detail. As shown in FIG. 4, the liquid processing unit U1 of the processing module 15 includes: a spin chuck 61 (holding portion); a coating liquid supply nozzle 62 (processing liquid supply portion); a solvent supply nozzle 63; and a rotation driving portion. 64; a cup base 65 (recovery section); a backside rinse liquid supply nozzle 77 (backside rinse liquid supply section); a discharge section 70; and a capture plate 30 (first capture section).

(Rotary chuck) The spin chuck 61 holds the wafer W (substrate) horizontally. The spin chuck 61 is connected to the rotation driving section 64 via a shaft 66 extending in the vertical direction (vertical direction). The spin chuck 61 rotates about the vertical axis in accordance with the manner in which the rotation drive unit 64 rotates the shaft 66. The spin chuck 61 is rotated about the vertical axis, and thereby the wafer W held by the spin chuck 61 is rotated about the vertical axis. The spin chuck 61 is moved up and down in accordance with the manner in which the shaft 66 is raised and lowered by the rotation driving unit 64.

(Rotary Drive Unit) The rotary shaft drive unit 64 rotates the spin chuck 61 about the vertical axis. The rotation driving unit 64 rotates the rotation chuck 61 connected to the upper end of the shaft 66 by rotating the shaft 66. In addition, the rotation driving unit 64 raises and lowers the rotary chuck 61 connected to the upper end of the shaft 66 in a vertical direction by raising and lowering the shaft 66.

The rotation driving unit 64 rotates the spin chuck 61 at an appropriate speed for each process in the liquid processing unit U1 of the processing module 15. This process includes at least a pre-wetting process, a coating liquid supply process, and a coating liquid expansion process. The so-called pre-wet process is used to "form a liquid film of an organic solvent on the wafer W before the coating solution is applied to the wafer W, thereby making the coating solution easily spread on the wafer W, It is difficult for air bubbles to mix between the wafer W and the coating solution. The coating liquid supply process is a process of supplying a coating liquid such as a high-viscosity photoresist to the wafer W. The coating liquid expansion process is a process of expanding the coating liquid applied on the wafer W to the peripheral portion of the wafer W. In the coating film expansion process, due to the rotation of the wafer W, a part of the coating film is thrown away from the end of the wafer W, and the coating film with high viscosity (for example, 1000 cp or more) is cured into a filament and becomes Filament. The rotation driving unit 64 is used in a pre-wetting process, and for example, the wafer W is rotated at 500 to 1500 rpm. The rotation driving unit 64 is used in a coating liquid supply process, for example, to rotate the wafer W at 800 to 1500 rpm. The rotation driving unit 64 is used in the coating liquid expansion process, for example, to rotate the wafer W at 500 to 1200 rpm.

(Coating liquid supply nozzle) The coating liquid supply nozzle 62 supplies a coating liquid (treatment liquid) such as a photoresist to the wafer W held by the spin chuck 61 in the coating liquid supply process. The spin chuck 61 is rotated by a rotation driving section 64. The coating liquid supply nozzle 62 supplies, for example, a coating liquid having a high viscosity (for example, 2000 cp or more) with an organic solvent concentration of 70% or less. The coating liquid supply nozzle 62 supplies the coating liquid to the surface W1 of the wafer W from above the approximate center of the wafer W. In addition, the coating liquid supply nozzle 62 may supply the coating liquid from above the position between the center position of the wafer W and the peripheral edge portion, or may scan between the center position of the wafer W and the peripheral edge side. , While supplying the coating liquid.

(Solvent Supply Nozzle) The solvent supply nozzle 63 supplies organic solvents, such as thinner, to the wafer W held by the spin chuck 61 during the pre-wet process. While spinning. The solvent supply nozzle 63 supplies an organic solvent while scanning at a center position and a peripheral portion of the wafer W at a speed of, for example, 10 to 200 mm / sec. In addition, the solvent supply nozzle 63 may supply an organic solvent in a state where it is stopped above the approximate center position of the wafer W.

(Cup base) The cup base 65 is disposed below the spin chuck 61 and is arranged to surround the shaft 66. The cup base 65 receives and collects the coating liquid leaked to the back surface W2 (the surface of the wafer W opposite to the surface W1 to which the coating film is supplied) of the wafer W and dropped.

(Backside rinse liquid supply nozzle) The backside rinse liquid supply nozzle 77 supplies a backside rinse liquid, which is an organic solvent such as a diluent, to the back surface W2 of the wafer W. The back-side rinsing liquid supply nozzle 77 is provided at, for example, two positions of the cup base 65, and has a below-mentioned catching plate 30 passing port 30b, which is described later, and is opened to an upper discharge port. In the coating liquid expansion process, the back surface flushing liquid is supplied to the back surface W2 of the wafer W, whereby the coating film supplied to the surface W1 can be prevented from being rewound to the back surface W2 side. In the coating film expansion process, the coating film is solidified into filaments at the end of the wafer W along with the rotation of the wafer W, and is supplied to the wafer W by a back-side washing solution. The back side W2 method can dissolve the filaments after the generation. In addition, the back surface washing liquid supplied to the back surface W2 of the wafer W is returned to the back surface W2 and is also supplied to a capture plate 30 (described later), which is disposed below the back surface W2.

(Discharge section) The discharge section 70 is configured to be disposed at a position that surrounds the spin chuck 61 from the outside, and is configured to exhaust and discharge (waste liquid) the coating liquid. The discharge unit 70 is a processing cup surrounding the spin chuck 61 and includes an inner cup 71 and an outer cup 72 disposed at positions surrounding the inner cup 71 from the outside. An exhaust flow path 80 is formed between the inner cup 71 and the outer cup 72.

The inner cup 71 includes a ring-shaped inclined wall 79 extending obliquely from the position close to the back surface W2 side peripheral edge of the wafer W toward the outer cup 72 and downward (outside lower); and a ring-shaped vertical wall 75. It continues to the lower end of the inclined wall 79 and extends vertically downward. The inclined wall 79 and the vertical wall 75 are configured to guide the coating liquid thrown off from the end of the wafer W to flow downward. The outer cup 72 has a bottom portion formed in the recessed portion and is configured as a ring-shaped liquid receiving portion. The outer cup 72 has a waste liquid port 73 formed in the lower part, and an exhaust port 78 is formed closer to the spin chuck 61 (inside) than the waste liquid port 73. A partition wall 76 is formed between the waste liquid port 73 and the exhaust port 78 and extends from the bottom to the top. The partition wall 76 is located more inward than the vertical wall 75 and extends to an upper side than the lower end of the vertical wall 75. Thereby, by forming a labyrinth structure with the partition wall 76 and the vertical wall 75, the gas and the liquid are appropriately separated, the gas can be appropriately discharged from the exhaust port 78, and the liquid can be appropriately discharged from the waste liquid port 73.

(Capture plate) The capture plate 30 is disposed below the spin chuck 61, and more specifically, is disposed between the spin chuck 61 and the cup base 65 to capture the supply of the coating solution to the spin The filaments generated from the wafer W. More specifically, the capture plate 30 is arranged on the cup base 65 so as to surround the shaft 66. The capture plate 30 is a plate-like member that is configured and fixed independently of the spin chuck 61. The capture plate 30 is fixed to the cup base 65.

As shown in FIG. 5, the capture plate 30 is formed in a disc shape. The capture plate 30 includes: a shaft hole 30a through which the shaft 66 passes; and a port 30b (first opening) through which the back surface washing liquid supplied from the back surface washing liquid supply nozzle 77 toward the back surface W2 of the wafer W passes; and The pin hole 30x is used to insert a positioning pin for fixing to the cup base 65. The shaft hole 30 a is formed in a substantially central portion of the capture plate 30. The through-port 30b is formed at a position where the back-side flushing liquid from the back-side flushing liquid supply nozzle 77 can pass through while the capture plate 30 is fixed to the cup base 65. In this embodiment, since the back-side washing liquid supply nozzles 77 are provided at two positions of the cup base 65, correspondingly formed through ports 30 b are also formed at two positions of the capture plate 30. The pin holes 30x are formed at two positions that are symmetrical to each other, for example, by sandwiching the central portion of the capture plate 30.

The capture plate 30 may be a processor provided with various treatments for more appropriately capturing the filaments. For example, the capture plate 30 may have uneven portions on the surface. In addition, the capture plate 30 may be a particle-blasted surface. In addition, the capture plate 30 may be a device that "has an air nozzle and controls the temperature and humidity or the air flow by the air nozzle to change the state of the filament".

The capture plate 30 is made of, for example, a material having corrosion resistance to a coating liquid such as a metal such as stainless steel, PTFE (Poly Tetra FluoroEthylene), PTEFE (Poly Chloro Tri Furuoro Ethylene), or polytrifluorochloroethylene.

[Functions and Effects of the First Embodiment] 液 The liquid processing unit U1 of the first embodiment includes: a spin chuck 61 to hold a wafer W; a rotation driving unit 64 to rotate the spin chuck 61; and a coating liquid supply nozzle 62. The coating liquid is supplied to the wafer W held by the spin chuck 61, and the spin chuck 61 is rotated by the rotation driving portion 64. The cup base 65 recovers the coating supplied from the wafer W. The coating liquid dropped on the back surface W2 on the opposite side of the liquid surface (front surface W1); and the capture plate 30 is disposed between the back surface W2 and the cup base 65 to capture the crystals supplied by the coating liquid to the rotation The filaments produced by the circle W.

The liquid processing unit U1 captures the filaments generated when the coating liquid is supplied to the rotating wafer W through the capture plate 30 disposed between the back surface W2 and the cup base 65. By arranging the capture plate 30 below the wafer W where the filaments are generated, the filaments can be efficiently captured. In addition, by arranging the capture plate 30 above the cup base 65, it is possible to prevent the filaments from being deposited on the cup base 65. According to the above, the liquid processing unit U1 can suppress "the filaments generated when the coating liquid is supplied to the rotating wafer W from being deposited in the space below the spin chuck 61 (for example, the cup base 65). ".

The liquid processing unit U1 further includes a back surface washing liquid supply nozzle 77 that supplies a back surface washing liquid toward the back surface W2 of the wafer W. By supplying the back surface washing liquid to the back surface W2 of the wafer W, it is possible to suppress the coating liquid supplied to the surface W1 of the wafer W from being rewound to the back surface W2 of the wafer W. In addition, the back surface washing liquid supplied to the back surface W2 is returned to the back surface W2 and is also supplied to the capture plate 30 which is disposed below the back surface W2. Thereby, the filaments captured by the capture plate 30 can be washed by the back washing liquid. Since the washed-out catch is liquefied, it will not be deposited on the cup base 65 when it is filamentous.

The catching plate 30 has a passage opening 30b, and a back surface washing liquid supply nozzle 77, and has a discharge opening opened above the passage opening 30b. Thereby, the back surface washing liquid supplied from the back surface washing liquid supply nozzle 77 will appropriately reach the back surface W2 of the wafer W through the through port 30b, and the effect due to the above back washing liquid can be appropriately achieved. That is, when the back-side washing liquid is directed upward from the discharge port of the back-side washing liquid supply nozzle 77, the back-side washing liquid can be passed through the port 30b to reach the back surface W2 of the wafer W, and the back surface W2 can be appropriately cleaned. Since the back surface washing liquid can be sufficiently supplied to the back surface W2, the amount of the back surface washing liquid dropped from the back surface W2 to the back surface of the capture plate 30 can also be sufficient.

In addition, in this embodiment, although the description was made of "rinsing the filaments captured by the capture plate 30 with the back surface washing solution", even if the filaments captured by the capture plate 30 are not rinsed by the back surface washing solution, Compared with the conventional structure in which filaments are deposited on the cup base, the application of the liquid processing unit becomes easier. That is, when the filaments are deposited on the cup base as in the past, it is necessary to directly wash the cup base provided with a large number of pipes, etc., and the use of the liquid processing unit is complicated. In contrast, in the configuration in which the filaments are captured by the capture plate 30, the filaments can be easily removed by taking out and washing the capture plate 30 even if the filaments are not rinsed off by the back washing liquid. . This makes it easier to use the liquid processing unit than in the past.

The capture plate 30 is an independent body with respect to the spin chuck 61 and is fixed to the cup base 65. The capture plate 30 is an independent individual and does not rotate (the position is fixed) with respect to the spin chuck 61, and thereby, the filament can be captured more effectively than when it is rotated.

The capture plate 30 is formed in a plate shape. Thereby, even in a limited space in the liquid processing unit U1, the filaments can be recovered with a simple configuration.

[Second Embodiment] Next, a liquid processing unit U1A according to a second embodiment will be described with reference to Figs. 6 and 7. It should be noted that in the description of this embodiment, the points that are different from the first embodiment will be mainly described.

As shown in FIG. 6, the liquid processing unit U1A of the second embodiment is provided with a capturing plate 40 instead of the capturing plate 30 described in the first embodiment. The capture plate 40 is integrally provided with the spin chuck 61 and rotates together with the spin chuck 61. More specifically, the capture plate 40 is disposed below the spin chuck 61 and rotates together with the spin chuck 61.

As shown in FIG. 7, the disc-shaped capture plate 40 is formed with a plurality of through-ports 40 b along the circumferential direction for allowing the back surface washing liquid to pass through. In the example shown in FIG. 7, eight passing ports 40 b are formed in the capture plate 40. The capture plate 40 is located at a position (position in the radial direction) where the back surface rinsing liquid is supplied, and at least the area passing through the port 40b is wider than the area that does not become the passage opening 40b (the back surface washing liquid is not allowed to pass). Thereby, even in the configuration in which the capture plate 40 is rotated, the back surface washing liquid can be appropriately passed through the passage port 40b.

As described above, in the liquid processing unit U1A of the second embodiment, the capture plate 40 is provided integrally with the spin chuck 61 and rotates together with the spin chuck 61. By rotating the capture plate 40, the back-side washing liquid can flow to different surfaces in the capture plate 40. Thereby, the filaments captured by the capture plate 40 can be more effectively washed by the back washing liquid.

In addition, the configuration in which the capture plate 40 is disposed below the spin chuck 61 can be simply configured as the structure in which the capture plate 40 is rotated, that is, the structure in which the filaments are rinsed by the back surface washing solution.

[Third Embodiment] Next, a liquid processing unit U1B according to a third embodiment will be described with reference to Fig. 8. In the description of this embodiment, the points that are different from the first and second embodiments described above will be mainly described.

As shown in FIG. 8, the liquid processing unit U1B according to the third embodiment includes a capture plate 50 instead of the capture plate 30 described in the first embodiment and the capture plate 40 described in the second embodiment. The capture plate 50 is inclined with respect to a surface parallel to the back surface W2 of the wafer W. More specifically, the capture plate 50 is provided with a thick wall on the side (inside) close to the shaft 66 and is formed with a thin wall as the side (outside) near the discharge section 70 is formed. The back surface W2 is inclined parallel to the plane.

In the capture plate 50 tilted as described above, the back-side washing liquid BR that jumps to the back surface W2 of the wafer W and reaches the capture plate 50 easily flows to the discharge portion 70 side on the capture plate 50 (see FIG. 8). That is, it can be set as the structure which flows the back surface washing | cleaning liquid BR easily. Accordingly, the filaments SI captured by the capture plate 50 can be effectively washed, and the filaments SI can be appropriately liquefied.

[Fourth Embodiment] Next, a liquid processing unit U1C according to a fourth embodiment will be described with reference to Figs. 9 and 10. In the description of the present embodiment, points that are different from the first to third embodiments described above will be mainly described.

As shown in FIG. 9, the liquid processing unit U1C according to the fourth embodiment is provided with a capture member 90 (second capture) at a position surrounding the spin chuck 61 from the outside in addition to the configuration described in the first embodiment. Section) is disposed on the upper part of the exhaust flow path 80 extending in the up-down direction so as to cover the exhaust flow path 80 and capture the filaments. The capture member 90 is provided so as to block the exhaust flow path 80. The catching member 90 is configured to have an opening 90d (second opening) (see FIG. 10) through which the exhaust gas flowing through the exhaust flow path 80 passes, and exhaust can be performed from the opening 90d, and the catching reaches the exhaust Filaments on the air flow path 80 side.

As shown in FIG. 10, the capture member 90 includes, for example, a metal inner ring 90a made of stainless steel or the like; an outer ring 90b having a larger diameter than the inner ring 90a; and a plurality of triangular-shaped connecting members 90c connected to the inner side Between the ring 90a and the outer ring 90b. The capture member 90 is provided as an opening portion 90d except for a region where a triangular-shaped connecting member 90c is provided in a region between the inner ring 90a and the outer ring 90b. Thereby, the upper and lower sides of the capturing member 90 can communicate with each other through the opening portion 90d, and the atmosphere inside the processing chamber can be exhausted to the exhaust flow path 80. The capturing member 90 passes the opening 90d to allow the exhaust gas and the liquid in the exhaust gas to pass under the capturing member 90, and captures the filaments by the connecting member 90c.

As described above, the filaments are generated when the coating liquid is thrown away from the peripheral edge portion of the rotating wafer W. Therefore, the filaments are easily generated on the peripheral portion side of the wafer W, that is, on the outside of the spin chuck 61. That is, at the position surrounding the spin chuck 61 from the outside, the exhaust flow path 80 extending in the up-down direction is likely to be clogged with filaments. At this point, the catching member 90 is provided so as to cover the exhaust flow path 80, and thereby it is possible to prevent the filaments from clogging the exhaust flow path 80. Moreover, the capture member 90 is formed with an opening portion 90d through which exhaust gas passes. Thereby, the filaments can be captured, and the exhaust in the exhaust flow path 80 can be performed appropriately.

Although the first to fourth embodiments of the present invention have been described above, the present invention is not limited to those described above, and may be modified or applied without changing the scope of the gist of each patent application. By.

For example, although the example in which the configuration of the present disclosure is applied to the liquid processing unit U1 of the processing module 15 has been described, it is not limited to this. Various devices that produce filaments ".

2‧‧‧ Coating and developing device (substrate processing device)

30, 40, 50‧‧‧ capture boards (the first capture section)

30b, 40b ‧‧‧ through mouth

61‧‧‧ Spin chuck (holding part)

62‧‧‧ Coating liquid supply nozzle (processing liquid supply unit)

64‧‧‧Rotary drive unit

65‧‧‧ cup base (recycling department)

70‧‧‧Exhaust

77‧‧‧Backside rinse liquid supply nozzle (backside rinse liquid supply unit)

80‧‧‧Exhaust flow path

90‧‧‧ capture member (second capture section)

90d‧‧‧ opening

W‧‧‧ Wafer (substrate)

W2‧‧‧ back

[FIG. 1] A perspective view showing a schematic configuration of a substrate processing system according to a first embodiment.图 [Fig. 2] A sectional view taken along the line II-II in Fig. 1. [Fig. 3] A sectional view taken along the line III-III in Fig. 2. [Fig. 4] A schematic view of a liquid processing unit according to the first embodiment. [Fig. 5] A schematic view of a capture member according to the first embodiment. [Fig. 6] A schematic view of a liquid processing unit according to a second embodiment. [Fig. 7] A schematic view of a capture member according to a second embodiment. [Fig. 8] A schematic view of a liquid processing unit according to a third embodiment. [Fig. 9] A schematic view of a liquid processing unit according to a fourth embodiment. [Fig. 10] A schematic view of a capture member according to a fourth embodiment.

Claims (9)

A substrate processing apparatus includes: (i) a holding portion that holds a substrate; (ii) a rotation driving portion that rotates the above-mentioned holding portion; (ii) a processing liquid supply portion that supplies a processing liquid to a substrate held by the holding portion, and the holding portion passes the above-mentioned The drive unit rotates and rotates; and the first capturing unit is disposed below the holding unit and captures the filaments generated when the processing liquid is supplied to the rotating substrate. For example, the substrate processing apparatus of the scope of application for a patent further includes: a recovery section for receiving the processing liquid leaked to the back side of the substrate, the first capture section, which is arranged in the holding section and the foregoing Between recycling department. For example, the substrate processing apparatus according to item 1 or 2 of the patent application scope further includes: (1) a back surface washing liquid supply unit that supplies a back surface washing liquid toward the back surface of the substrate. For example, the substrate processing apparatus according to the third aspect of the patent application, wherein: the first capture unit has a first opening, and the back surface washing liquid supply unit has a discharge opening opened above the first opening. For example, the substrate processing apparatus according to item 1 or 2 of the scope of patent application, wherein: (1) The first capturing section is configured and fixed independently of the holding section. For example, the substrate processing apparatus according to item 1 or 2 of the scope of patent application, wherein: (1) The first capturing section is provided integrally with the holding section. For example, the substrate processing apparatus according to item 1 or 2 of the scope of patent application, wherein: (1) The first capturing section is formed in a plate shape. For example, the substrate processing apparatus according to item 7 of the patent application, wherein the first capture unit is inclined with respect to a surface parallel to the rear surface of the substrate. For example, the substrate processing apparatus of the scope of patent application No. 1 or 2 further includes: an exhaust gas flow path extending in a vertical direction at a position surrounding the holding part from the outside; and a second catching part for exhausting the air The upper part of the flow path is disposed so as to cover the exhaust flow path, and captures the filament. The second capture part has a second opening for allowing exhaust gas flowing through the exhaust flow path to pass.